AVALANCHE PHOTODIODESSilicon and InGaAs APDs for Laser Guides, Metrology & Bio Medical

OPTICAL TECHNOLOGIES

Short Wavelength Series High Speed Series Near-Infrared (900nm) Enhanced Series InGaAs APD Discrete InGaAs APDs APD-TIA Receiver

SELECTION GUIDE AND NOMENCLATURE

Series 6

Series 8

Series 9

QE=100%

Silicon APD Model Number Description: APDxx - y - zzz - pppp

Wavelength (nm)

Options Descriptions

APD Avalanche Photodiode

xx

y

zzz

pppp

Active Area Size

Optimal Spectral Band

Breakdown Voltage

Package Style(refer to mechanical specifications)

02

05

10

15

30

50

6

8

9

150

250

T52, T46

TO5, T5H, T5i

TO8, T8H

Diameter 0.2 mm

Diameter 0.5 mm

Diameter 1.0 mm

Diameter 1.5 mm

Diameter 3.0 mm

Diameter 5.0 mm

630 nm

800 nm

900 nm

Low Voltage Operation

High Voltage Operation

TO-18 style

TO-5 style

TO-8 style

Silicon APD Typical Spectral Response (TA = 23°C, M = 100)

Res

po

nsi

tivi

ty (

A/W

)

1

SELECTION GUIDE AND NOMENCLATURE

ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)

Model

Active AreaDia.

OptimalWavelength

Responsivity@ Gain M

BreakdownVoltage

DarkCurrent

Ban

dw

idth

Cap

acit

ance

Pack

age

Gai

nM

(mm) (nm) Typ.(A/W)

Typ.(V)

Max(V)

Typ.(MHz)

Max(nA)

Typ.(pF)

(*)

APD02-6-150

APD05-6-150

APD10-6-150

APD15-6-150

APD30-6-150

APD50-6-150

0.2

0.5

1

1.5

3

5

630

630

630

630

630

630

40

40

40

40

20

20

200

200

200

200

200

200

5

5

5

15

30

100

900

400

250

100

20

8

3

8

18

35

140

365

TO-18

TO-18

TO-18

TO-5

TO-5

TO-8

100

100

100

100

50

50

SERIES 6 - 150: Visible Spectrum Optimized

APD02-8-150

APD05-8-150

APD10-8-150

APD15-8-150

APD30-8-150

APD50-8-150

0.2

0.5

1

1.5

3

5

800

800

800

800

800

800

50

50

50

50

30

20

250

250

250

250

250

250

1

1

2

5

10

30

1000

900

600

350

65

25

1.5

3

6

10

40

105

TO-18

TO-18

TO-18

TO-5

TO-5

TO-8

100

100

100

100

60

40

SERIES 8 - 150: High Bandwidth Applications

2

APD02-9-250

APD05-9-250

APD10-9-250

APD15-9-250

0.2

0.5

1

1.5

900

900

900

900

60

60

60

60

350

350

350

350

2

3

5

10

250

220

210

200

0.9

1.5

2.4

4.4

TO-18

TO-18

TO-18

TO-5

100

100

100

100

SERIES 9 - 250: NIR Enhanced Series

(*) Please refer to Mechanical Specification for package options available(**) Condition: Vr = 0.9 x Vbr

APD007-15-60

APD020-15-60

0.075

0.2

1550

1550

9

9

100

100

20 **

50 **

2000

1000

1.2

2.5

TO-18

TO-18

10

10

SERIES 15 - 60: InGaAs APD

150

150

150

150

150

150

150

150

150

150

150

150

250

250

250

250

60

60

ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)

3

APD Series 6-150Silicon Avalanche Photodiodes, 600nm band

APPLICATIONS• Analytical instrument

• Low-light-level measurement

FEATURES• High Sensitivity at Visible Spectrum

• Low Noise

• Low Bias Operation

• Low Temperature Coefficient: 0.14 V/°C

GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS

APD02-6-150-xxxx

APD05-6-150-xxxx

APD10-6-150-xxxx

APD15-6-150-xxxx

APD30-6-150-xxxx

APD50-6-150-xxxx

-55

-55

-55

-55

-55

-55

+125

+125

+125

+125

+125

+125

+100

+100

+100

+100

+100

+100

Product Model

Active Area

Diameter*1(mm)

Area(mm2)

Package Style*2

Operating Temperature(˚C)

MaxMin

-40

-40

-40

-40

-40

-40

Storage Temperature(˚C)

MaxMin

T52, T52L

TO5, T5H, T5i

TO8, T8H

0.2

0.5

1.0

1.5

3.0

5.0

0.03

0.19

0.78

1.77

7.0

19.6

APD02-6-150-xxxx

APD05-6-150-xxxx

APD10-6-150-xxxx

APD15-6-150-xxxx

APD30-6-150-xxxx

APD50-6-150-xxxx

Product Model

5

5

5

15

30

100

Responsivity

@ Gain M λ = 630 nm

(A/W)

Dark Current

Gain M

(nA)

Ct

Gain M

(pF)

Q.E.

M = 1 λ = 630

nm

(%)

Breakdown Voltage

100uA

(V)

Temperature Coefficient

of Breakdown

Voltage

(V/°C)

Bandwidth

-3dBGain M

λ = 630 nm

(MHz)

Excess Noise Figure

Gain Mλ = 630

nm

GainM

λ = 630 nm

0.2

0.2

0.3

0.5

1

3

Typ Max

200

200

200

200

200

200

150

150

150

150

150

150

Typ Max

3

8

18

35

140

365

80

80

80

80

80

80

0.14

0.14

0.14

0.14

0.14

0.14

900

400

250

100

20

8

0.3

0.3

0.3

0.3

0.3

0.3

100

100

100

100

50

50

*1: Area in which a typical gain can be obtained*2: Please refer to mechanical outline section to choose desired TO can package options. Cap with micro-lens is available for small active area size.

40

20

20

4

50

40

30

20

10

0

Wavelength (nm)200 300 400 500 600 700 800 900 1000 1100

Res

pons

ivity

(A/W

)

100%

80%

60%

40%

20%

0%

Qua

ntum

Effi

cien

cy

Wavelength (nm)200 300 400 500 600 700 800 900 1000 1100

Typ. Spectral Response (TA = 23°C, M = 100) Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)

Typ. Dark Currant vs. Reverse Bias (TA= 23˚C) Typ. Gain vs. Reverse Bias (T

A= 23˚C, 630 nm)

APD SERIES 6-150Silicon Avalanche Photodiodes, 600 nm band

Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f= 1MHz) 0.01 0.10 1.00 10.00

1000

100

10

10 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160

Gai

n

Reverse Bias Voltage (V)

FEATURES• High Sensitivity at Visible Spectrum

• Low Noise

• Low Bias Operation

• Low Temperature Coefficient: 0.14 V/°C

APD15-6-150

APD10-6-150

APD05-6-150APD02-6-150

Res

po

nsi

tivi

ty (

A/W

)

Wavelength (nm)

Qu

antu

m E

ffici

ency

Wavelength (nm)

Dar

k C

urr

ent

(pA

)

Reverse Bias Voltage (V)

APD30-6-150 APD50-6-150

Gai

n

Reverse Bias Voltage (V)

Cap

acit

ance

(p

F)

Reverse Bias Voltage (V)

APD50-6-150

APD30-6-150

APD15-6-150

APD10-6-150

APD05-6-150

APD02-6-150

5

APD Series 8-150Silicon Avalanche Photodiodes, 800nm band

APPLICATIONS• Optical Fiber Communication

• Laser range finder

• High speed photometry

FEATURES• Low Bias Operation

• Low Temperature Coefficient: 0.45 V/°C

• High Sensitivity, Low Noise

• High Bandwidth

ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)

GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS

APD02-8-150-xxxx

APD05-8-150-xxxx

APD10-8-150-xxxx

APD15-8-150-xxxx

APD30-8-150-xxxx

APD50-8-150-xxxx

-55

-55

-55

-55

-55

-55

+125

+125

+125

+125

+125

+125

+100

+100

+100

+100

+100

+100

Product Model

Active Area

Diameter*1(mm)

Area(mm2)

Package Style*2

Operating Temperature(˚C)

MaxMin

-40

-40

-40

-40

-40

-40

Storage Temperature(˚C)

MaxMin

T52, T52L

TO5, T5H, T5i

TO8, T8H

0.2

0.5

1.0

1.5

3.0

5.0

0.03

0.19

0.78

1.77

7.0

19.6

APD02-8-150-xxxx

APD05-8-150-xxxx

APD10-8-150-xxxx

APD15-8-150-xxxx

APD30-8-150-xxxx

APD50-8-150-xxxx

Product Model

1

1

2

5

10

30

Responsivity

@ Gain M λ = 800 nm

(A/W)

Dark Current

Gain M

(nA)

Ct

Gain M

(pF)

Q.E.

M = 1 λ = 800

nm

(%)

Breakdown Voltage

100uA

(V)

Temperature Coefficient

of Breakdown

Voltage

(V/°C)

Bandwidth

-3dBGain M

λ = 800 nm

(MHz)

Excess Noise Figure

Gain Mλ = 800

nm

GainM

λ = 800 nm

0.05

0.1

0.2

0.5

1

3

Typ Max

250

250

250

250

250

250

150

150

150

150

150

150

Typ Max

1.5

3

6

10

40

105

75

75

75

75

75

75

0.45

0.45

0.45

0.45

0.45

0.45

1000

900

600

350

65

25

0.3

0.3

0.3

0.3

0.3

0.3

100

100

100

100

60

40

*1: Area in which a typical gain can be obtained*2: Please refer to mechanical outline section to choose desired TO can package options. Cap with micro-lens is available for small active area size.

50

30

20

6

APD Series 8-150Silicon Avalanche Photodiodes, 800nm band

Typ. Spectral Responce (TA= 23˚C, M = 100)

Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)

60

50

40

30

20

10

0

Wavelength (nm)400 500 600 700 800 900 1000 1100

Res

pons

ivity

(A/W

)

100%

80%

60%

40%

20%

0%

Res

pons

ivity

(A/w

)

Wavelength (nm)400 500 600 700 800 900 1000 1100

Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)

Typ. Gain vs. Reverse Bias (TA= 23˚C, 800 nm)Typ. Dark Current vs. Reverse Bias (T

A= 23˚C)

FEATURES• Low Bias Operation

• Low Temperature Coefficient: 0.45 V/°C

• High Sensitivity, Low Noise

• High Bandwidth

APD50-8-150APD30-8-150

APD15-8-150

APD10-8-150

Res

po

nsi

tivi

ty (

A/W

)

Qu

antu

m E

ffici

ency

Wavelength (nm) Wavelength (nm)

Dar

k C

urr

ent

(pA

)

Gai

n

Reverse Bias Voltage (V) Reverse Bias Voltage (V)

Cap

acit

ance

(p

F)

Reverse Bias Voltage (V)

APD05-8-150 APD02-8-150

APD50-8-150

APD30-8-150

APD15-8-150APD10-8-150

APD05-8-150APD02-8-150

APD SERIES 8-150 SSilicon Avalanche Photodiodes, 850nm band

7

APPLICATIONS• Optical Fiber Communication

• Laser range finder

• High speed photometry

FEATURES• Low Bias Operation

• Low Temperature Coefficient: 0.45 V/°C

• High Sensitivity, Low Noise

• High Bandwidth

• 130-170V Breakdown Voltage

ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)

GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS

APD02-8-150-xxxxS

APD05-8-150-xxxxS

APD10-8-150-xxxxS

APD15-8-150-xxxxS

APD30-8-150-xxxxS

APD50-8-150-xxxxS

-55

-55

-55

-55

-55

-55

+125

+125

+125

+125

+125

+125

+100

+100

+100

+100

+100

+100

Product Model

Active Area

Diameter*1(mm)

Area(mm2)

Package Style*2

Operating Temperature(˚C)

MaxMin

-40

-40

-40

-40

-40

-40

Storage Temperature(˚C)

MaxMin

T52, T52L

TO5, T5H, T5i

TO8, T8H

0.2

0.5

1.0

1.5

3.0

5.0

0.03

0.19

0.78

1.77

7.0

19.6

APD02-8-150-xxxxS

APD05-8-150-xxxxS

APD10-8-150-xxxxS

APD15-8-150-xxxxS

APD30-8-150-xxxxS

APD50-8-150-xxxxS

Product Model

1

1

2

5

10

30

Responsivity

@ Gain M λ = 800 nm

(A/W)

Dark Current

Gain M

(nA)

Ct

Gain M

(pF)

Q.E.

M = 1 λ = 800

nm

(%)

Breakdown Voltage

100uA

(V)

Temperature Coefficient

of Breakdown

Voltage

(V/°C)

Bandwidth

-3dBGain M

λ = 800 nm

(MHz)

Excess Noise Figure

Gain Mλ = 800

nm

GainM

λ = 800 nm

0.05

0.1

0.2

0.5

1

3

Typ Max

170

170

170

170

170

170

130

130

130

130

130

130

Typ Max

1.5

3

6

10

40

105

75

75

75

75

75

75

0.45

0.45

0.45

0.45

0.45

0.45

1000

900

600

350

65

25

0.3

0.3

0.3

0.3

0.3

0.3

100

100

100

100

60

40

*1: Area in which a typical gain can be obtained*2: Please refer to mechanical outline section to choose desired TO can package options. Cap with micro-lens is available for small active area size.

50

30

20

Add suffix “S” to chosen model of APD Series 8-150 to indicate a tighter breakdown voltage range is required (130-170V range).

APD SERIES 8-150 SSilicon Avalanche Photodiodes, 850nm band

8

FEATURES• Low Bias Operation

• Low Temperature Coefficient: 0.45 V/°C

• High Sensitivity, Low Noise

• High Bandwidth

• 130-170V Breakdown Voltage

Typ. Spectral Responce (TA= 23˚C, M = 100)

Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)

60

50

40

30

20

10

0

Wavelength (nm)400 500 600 700 800 900 1000 1100

Res

pons

ivity

(A/W

)

100%

80%

60%

40%

20%

0%

Res

pons

ivity

(A/w

)

Wavelength (nm)400 500 600 700 800 900 1000 1100

Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)

Typ. Gain vs. Reverse Bias (TA= 23˚C, 800 nm)Typ. Dark Current vs. Reverse Bias (T

A= 23˚C)

APD50-8-150APD30-8-150

APD15-8-150

APD10-8-150

Res

po

nsi

tivi

ty (

A/W

)

Qu

antu

m E

ffici

ency

Wavelength (nm) Wavelength (nm)

Dar

k C

urr

ent

(pA

)

Gai

n

Reverse Bias Voltage (V) Reverse Bias Voltage (V)

Cap

acit

ance

(p

F)

Reverse Bias Voltage (V)

APD05-8-150 APD02-8-150

APD50-8-150

APD30-8-150

APD15-8-150

APD10-8-150

APD05-8-150

APD02-8-150

9

APD SERIES 9-250Silicon Avalanche Photodiodes, 900 nm band

APPLICATIONS• Rangefinder

• Spatial light transmission

• Long wavelength light detection

FEATURES• High Sensitivity in NIR region

• Temperature Coefficient: 1.6 V/°C

• Sensing area diameter 0.2 up to 1.5mm

GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS

APD02-9-250-xxxx

APD05-9-250-xxxx

APD10-9-250-xxxx

APD15-9-250-xxxx

-55

-55

-55

-55

+125

+125

+125

+125

+100

+100

+100

+100

Product Model

Active Area

Diameter*1(mm)

Area(mm2)

Package Style*2

Operating Temperature(˚C)

MaxMin

-40

-40

-40

-40

Storage Temperature(˚C)

MaxMin

T52, T52L

TO5, T5H, T5i

0.2

0.5

1.0

1.5

0.03

0.19

0.78

1.77

ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)

APD02-9-250-xxxx

APD05-9-250-xxxx

APD10-9-250-xxxx

APD15-9-250-xxxx

Product Model

2

3

5

10

Responsivity

@ Gain M λ = 900 nm

(A/W)

Dark Current

Gain M

(nA)

Ct

Gain M

(pF)

Q.E.

M = 1 λ = 900

nm

(%)

Breakdown Voltage

100uA

(V)

Temperature Coefficient

of Breakdown

Voltage

(V/°C)

Bandwidth

-3dBGain M

λ = 900 nm

(MHz)

Excess Noise Figure

Gain Mλ = 900

nm

GainM

λ = 900 nm

0.3

0.3

0.5

1.0

Typ Max

350

350

350

350

250

250

250

250

Typ Max

0.9

1.5

2.4

4.4

80

80

80

80

1.6

1.6

1.6

1.6

250

220

210

200

0.3

0.3

0.3

0.3

100

100

100

100

*1: Area in which a typical gain can be obtained*2: Please refer to mechanical outline section to choose desired TO can package options. Cap with micro-lens is available for small active area size.

60

10

FEATURES• High Sensitivity in NIR region

• Temperature Coefficient: 1.6 V/°C

• Sensing area diameter 0.2 up to 1.5mm

APD SERIES 9-250Silicon Avalanche Photodiodes, 900 nm band

Typ. Spectral Responce (TA= 23˚C, M = 100)

Typ. Capacitance vs. Reverse Bias (TA= 23˚C)

Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)

Typ. Gain vs. Reverse Bias (TA= 23˚C, 905 nm)Typ. Dark Current vs. Reverse Bias (T

A= 23˚C)

APD15-9-250APD10-9-250

Res

po

nsi

tivi

ty (

A/W

)

Qu

antu

m E

ffici

ancy

Wavelength (nm) Wavelength (nm)

Dar

k C

urr

ent

(pA

)

Gai

n

Reverse Bias Voltage (V) Reverse Bias Voltage (V)

Cap

acit

ance

(p

F)

Reverse Bias Voltage (V)

APD05-9-250

APD15-9-250

APD10-9-250

APD05-9-250

APD02-9-250

APD02-9-250

0 50 100 150 200 250

APD SERIES 15-60InGaAs Avalanche Photodiodes, 1550 nm band

APPLICATIONS• Optical Fiber Communication

• OTDR

• Distance Measurement

• Low-light-level detection

FEATURES• 75 and 200 um diameter Active Area

• Low voltage operation

• Low capacitance

• High sensitivity and low dark current

GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS

APD007-15-60-xxxx

APD020-15-60-xxxx

-55

-55

+125

+125

+85

+85

Product Model

Active Area

Diameter(mm)

Area(mm2)

Package Style*1Operating

Temperature(˚C)

MaxMin

-40

-40

Storage Temperature

(˚C)

MaxMin

T46, T46L, WCER

T46, T46L, WCER

0.075

0.2

0.004

0.03

2

2

2

2

MaxMax

Forward Current

(mA)

Reverse Current

(mA)

ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)

Product Model

APD007-15-60-xxxx

APD020-15-60-xxxx

Typ Max Typ Typ Max Typ

SpectralResponse

Range

(nm)

Responsivity

M = 10 λ = 1550 nm

(A/W)

Dark Current

Vr = 0.9 x Vbr.

(nA)

Capacitance

M = 10f = 1 MHz

(pF)

Breakdown Voltage

Vbr.

100uA

(V)

Temperature Coefficient of Breakdown

Voltage

(V/°C)

Bandwidth-3dB

M = 10λ = 1550 nm

(GHz)

950~

1700

91

5

20

50

1.2

2.5

60

60

80

80

0.15

0.15

2

1

*1: Please refer to mechanical outline section to choose desired package options.

11

APD SERIES 15-60InGaAs Avalanche Photodiodes, 1550 nm band

Typ. Spectral Responce (TA= 23˚C, M = 1)

Typ. Dark Current vs. Reverse Bias (TA= 23˚C)

APD50-8-150APD05-8-150

Res

po

nsi

tivi

ty (

A/W

)

Wavelength (nm)

Dar

k C

urr

ent

(nA

)

Reverse Bias Voltage (V)

Typ. Gain vs. Reverse Bias (TA= 23˚C, 1550 nm)

Gai

n

Reverse Bias Voltage (V)

Typ. Capacitance vs. Reverse Bias (TA= 23˚C)

Cap

acit

ance

(p

F)

Reverse Bias Voltage (V)

APD020-15-60

APD007-15-60

APD50-8-150APD05-8-150

APD020-15-60

APD007-15-60

12

D1

C1

X1

U1S1

R1_

+

S1

R1

C1

D1

X1

U1

Bias Supply Voltage (and temperature compensation as needed)

Current Limiting Resistor

Capacitor

Avalanche Photodiode

Excessive Voltage Protective Circuit

High-speed Op-Amp Readout Circuit

Typical Peripheral Circuit

Series 6-150

Series 8-150

Series 9-250

Mechanical SpecificationsAll units in mm. Pinouts are bottom view.

913

Pin Circle Dia = 2.54

2.53.25

ø2.5

14

T52

3 Case 3 Case

1c2a1a2c

APD02-6-150-T52

APD05-6-150-T52

APD10-6-150-T52

APD02-8-150-T52

APD05-8-150-T52

APD10-8-150-T52

APD02-9-250-T52

APD05-9-250-T52

APD10-9-250-T52

Series 6-150

Series 8-150

Series 9-250

Products

Series 6-150 Series 8-150 Series 9-250

Glass window may extend a maximum of 0.1 mm above the upper surface of the cap.

T52L (with lens)

APD02-6-150-T52L

APD05-6-150-T52L

APD02-8-150-T52L

APD05-8-150-T52L

APD02-9-250-T52L

APD05-9-250-T52L

Products

Pin Circle Dia = 2.54

2.53.8

14

0.67ø1.5 Series 6-150

Series 8-150

Series 9-250

T46

APD007-15-60-T46

APD020-15-60-T46

Products

Series 15-60

Pin Circle Dia = 2.54

1.62.7

ø2.5

13

ø1.2 MAX

3

2 Case

1c3a

Window is broadband A/R coatedCentered at 1300nm.

T46L (with lens)

APD007-15-60-T46L

APD020-15-60-T46L

Products

Series 15-60

Pin Circle Dia = 2.54

1.63.8

13

ø1.2 MAX

3

0.67ø1.5

APD15-6-150-TO5

APD30-6-150-TO5

APD15-8-150-TO5

APD30-8-150-TO5

APD15-9-250-TO5

Products

Series 6-150 Series 8-150 Series 9-250

2 Case 2 Case

1c3a1a3c

Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.

APD15-6-150-T5H

APD30-6-150-T5H

APD15-8-150-T5H

APD30-8-150-T5H

APD15-9-250-T5H

Products

Series 6-150 Series 8-150

Series 6-150

Series 8-150

Series 9-250

Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.

2 Case 2 Case

1c3a1a3c

Series 9-250Pin Circle Dia = 5.08

20

4.14

2.3

ø6.1ø8.25±0.1

ø9.15±0.2

±0.2

ø0.45

ø1.5 MAX

Pin Circle Dia = 5.08

13

4.14

2.3

ø6.1ø8.25±0.1

ø9.15±0.2

±0.2

ø0.45

ø1.5 MAX

3 Case 3 Case

1c2a1a2c

Series 6-150 Series 8-150 Series 9-250

2 Case

1c3a

T5H TO5

14

Mechanical SpecificationsAll units in mm. Pinouts are bottom view.

T5i

Series 6-150 Series 8-150

APD15-6-150-T5i

APD30-6-150-T5i

APD15-8-150-T5i

APD30-8-150-T5i

APD15-9-250-T5i

Products

Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.

Case1c3

2a

Case3

2c

1a

TO8

Series 6-150 Series 8-150

APD50-6-150-TO8

APD50-8-150-TO8

Products

Series 6-150

Series 8-150

Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.

2 Case 2 Case

1c3a1a3c

Pin Circle Dia = 7.5

20

4.9

2.1

ø10.9ø12.3±0.2

ø14 ±0.2

±0.2

ø1 MAX

±0.2

0.5

ø0.45

T8H

Series 6-150 Series 8-150

APD50-6-150-T8H

APD50-8-150-T8H

Products

Series 6-150

Series 8-150

Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.

2 Case 2 Case

1c3a1a3c

Pin Circle Dia = 7.5

20

4.9

2.1

ø10.9ø12.3±0.2

ø14 ±0.2

±0.2

±0.2

0.5

ø0.45

ø1 MAX2

Pin Circle Dia = 5.08

20

4.5

2.4

ø6.1ø8.25±0.1

ø9.15±0.2

±0.2

ø0.45

2

3

WCER

APD007-15-60-WCER

APD020-15-60-WCER

Products

Die is mounted with a tolerance of ±75um.

Series 15-60

Series 6-150

Series 8-150

Series 9-250

Series 9-250

Applications Laser Radar (LADAR) and Rangefinding Low-level Optical Pulse Discrimination Free-space Optical Communication Optical Time Domain Reflectometry Confocal Microscopy

Product Features 80 or 200 µm InGaAs APD Small form-factor design Low dark current High reliability, epoxy free,

hermetic packaging High responsivity in the

0.95-1.65 um wavelength

PLA-200 & PLA-280: High Sensitivity Large Area APD Components

Princeton Lightwave’s PLA series APD offers industry-leading performance in terms of dark current, sensitivity and reliability. It leverages PLI’s proprietary high performance, planar InP-InGaAs APD device design, and high reliability packaging platforms. The device is designed for operation in the linear mode with voltage bias below breakdown, at typical optical gains of 10-15. The APDs employ a front illuminated design, and packaged in either a standard TO-18 or ceramic sub-mount.

The component manufacturing is achieved in a high quality, ISO certified facility. Every device undergoes a rigorous quality and reliability regimen, including temperature cycling and high temperature, high bias burn-in. The package construction is organic free with hermetic sealing of the APD. These devices are designed to operate robustly in harsh environment applications.

PERFORMANCE SPECIFICATIONS

Operating conditions: Case temperature = 23°C

Parameter Description

Test Conditions

Specifications (80µm)

Specifications (200µm) Units

Min Typ. Max Min Typ. Max

Effective Optical Diameter 80 200 µm

Breakdown voltage, Vb Id = 10 µA 55 80 55 80 V Temp. dependence of Vb, ∆Vb/∆T 0.1 0.1 V/°C

Responsivity, R 1550 nm, M=1 0.85 0.85 A/W

Total Dark Current, Id M=10 3 10 10 50 nA Dark Noise Current Density, Jn

M=10 0.2 0.4 pA/√Hz

Capacitance, C† M=10, 1 MHz 0.8 1 1.8 2 pF

Bandwidth, F3dB M=10, 50 Ω load 1 0.4 GHz

Noise Equivalent Power, NEP M=10. 1550 nm 0.027 0.050 pW/√Hz

† Capacitance values include the package capacitance, COC capacitance is 0.15 pF lower

ABSOLUTE MAXIMUM RATINGS 1

Parameter Min Max

Storage Temperature ‐40 85 C

Operating Temperature ‐40 85 C

Forward Current +1 mA

Forward Voltage +1 V

Reverse Current ‐1 mA

Reverse Voltage Vb V

CW Optical Power 2 1 mW

TEC Current 2 Amp

1 Maximum operating ratings indicate operating conditions that the device can sustain without damage for short time intervals. Long term operation under these conditions is not recommended.

2 Assumes a beam spot > 50 um in diameter PRODUCT HANDLING These APDs are sensitive to electrostatic discharge (ESD) and should be handled with appropriate caution, including the use of ESD protective equipment such as grounding straps and anti-static mats. MECHANICAL SPECIFICATIONS: PLA-280, PLA-200 in TO-18 The PLA-080 and PLA-200 are provided in a standard 2-lead TO-18 housing.

PLI’s large area APDs can be provided on a customer-supplied or PLI designed ceramic sub-mount. ORDERING INFORMATION PLA-280: 80 um APD in TO-18 PLA-200: 200 um APD in TO-18

Pin

1

2

Function

Cathode

Anode

Applications • Laser Radar (LADAR) and Rangefinding • Low-level Optical Pulse Discrimination • Free-space Optical Communication • Optical Time Domain Reflectometry • Confocal Microscopy

Product Features • 80 µm InGaAs APD

ultra-low noise TIA • 500 MHz bandwidth • Overload protection circuitry • Industry leading sensitivity and

overload performance • Small form-factor

PLA-8XX – Sub-Nanosecond, High Sensitivity APD Front End Receiver Module

Princeton Lightwave’s PLA-8XX series APD with transimpedance amplifier product family offers industry-leading sensitivity in multiple packaging formats. These modules leverage PLI’s high performance, planar InP-InGaAs avalanche photodiodes (APDs) developed specifically for demanding low light level detection in ranging, LADAR and scientific applications.

The PLA-841 incorporates the above features in a 6-pin, TO-46 style package. It achieves a 500-MHz bandwidth, enabling sub-nanosecond timing accuracy. The ultra low-noise amplifier, in combination with the low dark current of the APD, offers excellent low light-level performance over a wide operating temperature range. The APD module also includes circuitry for overload protection of the receiver, and to enhance recovery from high optical input pulses. The combination of minimal dependence on temperature variation, un-cooled operation and compact packaging enables significant SWaP (size, weight and power) advantages. For more demanding applications where the dependence of the APD operating voltage on temperature must be controlled by temperature stabilization, the PLA-83X and PLA-86X version incorporate, in a flanged packaging format, the receiver performance of the PLA-841 with an internal thermo-electric cooler (TEC) and temperature sensor. The PLA-??? is a TO-37 module designed to provide a compactness approaching that of the PLA-841 (ref TO-46) while providing an internal TEC. The PLA-86X receiver is a TO-66 module, also with an internal TEC, designed to provide form-factor compatibility with legacy systems. All modules have pin-out and form-factor compatibility with PLI’s line of 100-MHz High-Sensitivity APD Front End Receiver Modules for near-perfect interchangeability.

All versions are assembled in a hermetic enclosure, and incorporate packaging designs and processes that ensure robust, reliable operation in harsh environments.

PERFORMANCE SPECIFICATIONS: PLA-8XX

Operating conditions: VDD=+3.3V to GND; Case temperature = 25°C; RLOAD=150 Ω differential

Parameter Description

Test Conditions Specifications

UnitsMin Typical Max

Effective Optical Diameter 80µm APD 80 µm

Breakdown voltage, Vb Id = 10 µA 50 90 V Temp. dependence ΔVb/ΔT 0.15 V/°C Impulse Response (FWHM) M=10, 80µm APD 1 ns

Bandwidth (3dB, optical) M=10, 80µm APD 550 MHz

Responsivity @ 1550 nm Differential output, M=10 165

kV/W Single-ended output, M=10 82.5

Dark noise equivalent power† 1550 nm, M=10 250 fW/√Hz

Output Impedance Differential output 150

Ω Single-ended output 75

Output voltage swing Differential output 0.46

Vp-p Single-ended output 0.23

Dynamic range 1550 nm, M=10 20 dB Power supply current 0nW optical input 25 mA

TEC Voltage†† 0.6 V TEC Current†† 0.6 A

† NEP computed with measured output noise, with no optical illumination, divided by responsivity.

†† For PLA-86X versions only, enables above performance across operating case temperature range of -40°C to + 85°C

ABSOLUTE MAXIMUM RATINGS Parameter Min Max

Supply Voltage1 (+3.3V) ‐0.5 4 Volt

APD Reverse Bias3 0 Vbr Volt Limiter Voltage 0 2.5 Volt TIA Output Voltage ‐0.5 Vdd Volt Tsens Current 1 mAmp TEC Voltage 1 Volt TEC Current 1 Amp

1 Should be applied after APD reverse bias. 2 APD Reverse Bias should be applied before TIA supply voltage

PRODUC These avwith approanti-static MECHAN PLA-841

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MECHANICAL SPECIFICATIONS: PLA-861 The PLA-861 is a 12-pin TO-66 module. All dimensions are in millimeters.

Pin Function 1 NC 2 ‐TEC 3 +TEC 4 TSENS1 5 TSENS2 6 CASE GND 7 +HV (APD Cathode) 8 OUT‐ 9 OUT+ 10 VDD 11 N.C. 12 LIMITER

Applications Laser Radar (LADAR) and Rangefinding Low-level Optical Pulse Discrimination Free-space Optical Communication Optical Time Domain Reflectometry Confocal Microscopy

Product Features 80 or 200 µm InGaAs APD

ultra-low noise TIA 100 MHz bandwidth Overload protection circuitry Industry leading sensitivity and

overload performance Small form-factor

PLA-6XX – High Sensitivity APD Front End Receiver Modules

Princeton Lightwave’s PLA-6XX series APD with GaAs-based FET transimpedance amplifier product family offers industry-leading sensitivity in multiple packaging formats. These modules leverage PLI’s high performance, planar InP-InGaAs avalanche photodiodes (APDs) developed specifically for demanding low light level detection in ranging, LADAR and scientific applications.

The PLA-641 incorporates the above features in a 6-pin, TO-46 style package. It achieves a 100-MHz bandwidth, enabling 2 nanosecond timing accuracy. The ultra low noise of the GaAs-based FET amplifier, in combination with the low dark current of the APD, offers excellent low light-level performance over a wide operating temperature range. The APD module also includes circuitry for overload protection of the receiver, and to enhance recovery from high optical input pulses. The combination of minimal dependence on temperature variation, un-cooled operation and compact packaging enables significant SWaP (size, weight and power) advantages. For more demanding applications where the dependence of the APD operating voltage on temperature must be controlled by temperature stabilization, the PLA-66X version incorporate, in a flanged packaging format, the receiver performance of the PLA-641 with an internal thermo-electric cooler (TEC) and temperature sensor. The PLA-66X receiver is a TO-66 module, also with an internal TEC, designed to provide drop-in compatibility with industry standard pin-outs for applications in legacy systems. All versions are assembled in a hermetic enclosure, and incorporate packaging designs and processes that ensure robust, reliable operation in harsh environments.

PERFORMANCE SPECIFICATIONS: PLA-641 AND PLA-66X

Operating conditions: VDD=+3.3V to GND; Case temperature = 25°C; RLOAD=100 Ω differential

Parameter Description

Test Conditions Specifications

UnitsMin Typical Max

Effective Optical Diameter 200µm APD 200 µm

80µm APD 80

Breakdown voltage, Vb Id = 10 µA 50 90 V Temp. dependence ∆Vb/∆T 0.15 V/°C

Impulse Response (FWHM) M=10, 80µm APD 2.4 ns

M=10, 200µm APD 3.5 ns

Bandwidth (3dB, optical) M=10, 80µm APD 150 MHz

M=10, 200µm APD 100 MHz

Responsivity @ 1550 nm Differential output, M=10 280

kV/W Single-ended output, M=10 140

Dark noise equivalent power† 1550 nm, M=10, 80µm APD 90

fW/√Hz1550 nm, M=10, 200µm APD 130

Output Impedance Differential output 100

Ω Single-ended output 50

Output voltage swing Differential output 0.8

Vp-p Single-ended output 0.4

Dynamic range 1550 nm, M=10 30 dB

Overload recovery†† (equiv. optical signal @ 1us)

Optical input: 10mW, 30ns 65 nW Optical input: 1mW, 30ns 10 nW

Power supply current 0nW optical input 30 mA TEC Voltage 0.6 V TEC Current 1.5 A

† NEP computed with measured output noise, with no optical illumination, divided by responsivity.

†† Equivalent optical signal computed by dividing measured output voltage by responsivity.

ABSOLUTE MAXIMUM RATINGS

Parameter Min Max

Supply Voltage (+3.3V) ‐0.5 4 Volt

Supply Voltage1 (+5V) ‐0.5 6 Volt

APD Reverse Bias3 0 Vbr Volt

Limiter Voltage 0 2.5 Volt

TIA Output Voltage ‐0.5 Vdd Volt

Tsens Current 1 mA

TEC Voltage 1 Volt

TEC Current 2 A

1 For PLA661 and PLA662 versions only; applied as alternative to +3.3V; should be applied after APD reverse bias.

PRODUCT HANDLING These avalanche photodiodes are sensitive to electrostatic discharge (ESD) and should be handled with appropriate caution, including the use of ESD protective equipment such as grounding straps and anti-static mats. MECHANICAL SPECIFICATIONS: PLA-641 PLA-641 is a 6-pin TO-46 module.

ELECTRICAL BLOCK DIAGRAM: PLA 641

LIMITER LIMITER is a control voltage that manages overload protection and recovery of the APD and TIA. Effective overload recovery is achieved by applying fixed voltage so that the limiter diode is zero-biased (typical 0.9V). Alternatively, the pin may be left unconnected, allowing the internal capacitor to hold the zero-bias voltage.

Bottom view

Pin

1

2

3

4

5

6 OUT‐

Function

CASE GND

OUT+

VDD

LIMITER

+HV

MECHANICAL SPECIFICATIONS: PLA-661 and PLA-662 The PLA-661 and PLA-662 are 12-pin TO-66 modules. All dimensions are in millimeters.

Pin Function (PLA‐661) Function (PLA‐662)

1 +5V (alternative) +5V (alternative)

2 ‐TEC ‐TEC

3 +TEC +TEC

4 TSENS1 TSENS1

5 TSENS2 TSENS2

6 CASE GND CASE GND

7 +HV (APD Cathode) +HV (APD Cathode)

8 OUT‐ GND

9 OUT+ OUT‐

10 VDD (+3.3V ) VDD (+3.3V)

11 N.C. N.C.

12 LIMITER LIMITER The PLA-66X is designed to maintain drop-in compatibility with existing systems and applications. For example, though the internal electronics require only +3.3V, the option to use a +5V power supply is provided through use of an internal series resistor that lowers the supply voltage to the amplifier. The PLA-662 also internally terminates one of the TIA outputs to 50-ohms, thereby maintaining a pin-out compatible with applications that allow for a single-end output.

ELECTRICAL BLOCK DIAGRAM: PLA-661

ELECTRICAL BLOCK DIAGRAM: PLA-662

© A

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Tech

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Power Technologies

Thermal Management www.amstechnologies.com

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