2003-2009 SiC market analysis for material, devices … SiC market analysis for material, devices and applications ... proposing silicon carbide wafer products. ... SiC Schottky diodes

© 2005

Copyrights © Yole Développement SARL. All rights reserved.

2003-2009 SiC market analysis formaterial, devices and applications

Norstel AB

© 2005 • 2Copyrights © Yole Développement SARL. All rights reserved.

Content

• Applications roadmap• New players on the market place• Status of SiC market in 2004 and 2009 projection• Focus on power electronics

– Schottky diode business– Automotive applications

• Opto business: SiC vs. sapphire• SiC material status• CREE and conclusion


SiC-based applications roadmap

SiC electronics in powerdistribution networks

SiC electronics in rail traction

SiC electronics in EV, HEV & FCV cars

SiC electronics in industry

SiC MESFET in 3G ,WiMax, SatCom & defense RF systems

SiC Schottky diodes in Power Factor Correctors for power supplies

HB-LEDs GaN/SiC for lightning

2005 2006 20092004 20152007 2008

SiC roadmap


Who’s new on the market place since 2003 ?

• Companies:– Bridgestone (J). They are using their expertise in SiC powder and poly-crystal

substrates to enter in single crystal SiC manufacturing. They have demonstrated 6H polytype.

– NeoSemiTech (Korea) has entered in SiC single crystal business– CR Semiconductor Wafer & Chips (China) is launching developments in SiC Schottky

barrier diodes– IntrinSiC (US), who has acquired Bandgap Technologies, Inc., proposing silicon carbide

wafer products.– Okmetic that turns into Norstel (SW), still focusing on HT-CVD grown SiC material.

• New start-up:– Caracal Inc. (US, Pittsburg), hold by Dr. Olle Kordina -> SiC power devices (new gas-

based technique epi solution using HCl as an additive, : growth rate x 3: 28µm/h) and SiC material

– GeneSiC Semiconductor Inc. (US, Maryland), hold by Dr. Ranbir Singh -> SiC devices for ultra-high voltage applications (MOSFETs, IGBTs, Thyristors, …). Under contract with Darpa.

– TranSiC (SW), funded in 2005, will bring power bipolar transistors to the market during 2006.Pr. Mikael Östling, entrepreneur Bo Hammarlund and Martin Domeij Ph D and researcher at KTH are the three founders

SiC new players


Status of SiC-based devices in 2004and 2009 projection

HB-LEDGaN/SiC Schottky diode MESFET MOSFET / JFET PiN diode BJT /

Thyristor

2004 Market status $540M In Production

$11.7M Pre-prod.

~ 1$M

MOSFET:R&D.Pre-prod in 2008JFET: emerging

R&D. Pre-prod in 2008 R&D

R&D level

n/a

GECreeUnited SiCPowerSiCel

2009 market forecast

> $800M depending on

Osram involvement in SiC-based LEDs

~$45M for PFC+

growing curve for others apps.

Could be > $80Mdepending on SiC vs. GaN competition on

3G & WiMax business

Market to startdepending on HEV &

EV market volume and SiC use in cars

> $10Mmainly In

industry and power

distribution

EmergingTAM~ $200M /

year

2004 SiC wafers consumption (2” eq.)

320,000 x 2” 13,000 x 2” < 500 x 2” R&D level R&D level

Players on the market place

Cree: $240MOsram

Infineon Cree RockwellRohm

Cree: < $1MRockwellNew Japan Radio n/a n/a

Challengers No new company

STMInt. RectifierGEToshibaMitsubishiSemiSouthDynexEcoTronFuji

Northrop GrummanSemiSouthIntrinSiC

SiCedToshibaMitsubishiPhilipsDensoRohmFujiSumitomoRockwellUnited SiC

SiCedCreeGERockwellKansai Electric

SiC market segmentation


SiC: from material to device to market: Focus on electronic applications

Conductive SiCConductive SiC Semi-insulating SiC

Semi-insulating SiC

RectifiersRectifiers SwitchesSwitches

RF transistorsRF transistorsSchottkydiodes

Schottkydiodes

Bipolardiodes

Bipolardiodes

UnipolartransistorsUnipolar

transistorsBipolar

transistorsBipolar

transistors

PiNPiN MOSFETMOSFET JFETJFET BJTBJT Thyristor(GTO)

Thyristor(GTO) MESFETMESFET

0.3 -> 1.2 kV0.3 -> 1.2 kV> 2 kV> 2 kV 0.3 -> 1.2 kV0.3 -> 1.2 kV > 2 kV> 2 kV RF / HFRF / HFRF / HF

SiC crystal growthSiC market segmentation

© 2005


SiC devices:Power electronics market

Power electronics


SiC power electronic devices:Market status: small but promising…

• Reality of the market in 2005:– As in 2003, only one component, Schottky diode (SBD),

has reached the commercialization stage and met the market requirements.

– The applicative market is the PFC (Power Factor Correctors) for high-end power supplies.

– 3 main players are active on this segment: Infineon, Cree and Rockwell.

– 2005 revenues for this segment will reach $17.6M at device level

• We forecast this market will handle 6.5 million units of Schottky devices in 2005.

• The related wafers consumption should reach about 13,000 substrates (2”+3”). Transition to 3” wafer is now a clear trend.

Power electronics


SiC power electronic devices:Market status: small but promising…

• This market level is not big enough to sustain the activity of many other companies!! ...

• ….. But future can be brighter:– With Schottky ASP reduction down to ~$0.2/amp, the potential market can be

extended to mid and even low-end applications using PFC: a ~$45M market is viewed in 2009 for SBD with a related 35,000 wafers consumption.

– Automotive manufacturers are more and more involved with SiC devices to develop efficient hybrid or full electric cars. Coupled with high power density silicon transistors, it will help to decrease power loses and system size/weigh in inverters and converters. Next step will be the emergence of reliable SiC transistors to provide a full-SiC solution. But:

• EV or HEV market is slowly emerging. Big volumes are linked to oil price, ecological behavior and governmental financial incentives

• Silicon is still on the run to compete in high power density field. Trench MOSFET technology is a pertinent candidate to take market share over SiC future transistors.

– Other applications are expected improvements thanks to SiC devices:• Defense, rail traction, industry, electrical power distribution network, …

Power electronics

© 2005


SiC Schottky Barrier Diode (SBD)Device and related markets

Power electronics: Schottky

© 2005 • 11Copyrights © Yole Développement SARL. All rights reserved. Power electronics: Schottky

SiC Schottky diodes2004 market status

In terms of components using SiC hetero-structures as active layers, the most advanced component remains SiC Schottky diodes. This component is at a production level and we estimate that ~4 million Schottky diodes have been produced in 2004.

Today, only 3 companies are producing such a component:• Cree (US)• Infineon (D): Epi and R&D made by SiCed (Erlangen, D) and chips made in Infineon 3’’ fab in Villach (Au). Customers example: Lambda (NV series power supplies). •Rockwell (US).

Rohm (J) should have been entered in Schottky business spring 2004. Others companies like Fuji (J), Hitachi (J), International Rectifier (I), Matsushita (J), STM (I), Toshiba (J), EcoTron (J), CSWC (C) have a strong R&D related to process Schottky diodes but have no entered in a production stage yet.


SiC Schottky diodesDevices specs roadmap

20072005 2009

10A/1200V 40A/1200V 100A/1200V

• Roadmap is given for single chip device

• This evolution is linked to the improvement of useable area, and so to micropipes density

• A 100A diode will need about 10x10 mm² micropipe-free active area. 1200 V breakdown voltage requires about 12-15 µm epilayer thickness.

• It’s now all a question of material ! …. and cost….



SiC Schottky diodes market forecasts

0

5 000 000

10 000 000

15 000 000

20 000 000

25 000 000

30 000 000

2003 2004 2005 2006 2007 2008 2009

Volu

me

(uni

ts)

0

10

20

30

40

50

60

Mar

ket (

M$)

SiC Schottky diodes market forecasts

0.3$ / Amp

0.5$ / Amp

Cree shows $3 M revenues on Schottky business in 2004


© 2005


SiC devices:Automotive applications

Power electronics: Automotive


Why SiC in cars ?

• Electronics is now accounting for more than 25% of cars cost.• Power electronics will be more and more implemented in car due to:

– The emergence of 42 volts electronics with related systems: electric steering and breaks, X-by-wire commands, piezo fuel injectors, …

– The high market penetration of hybrid cars (HEV), electric cars (EV) and future fuel-cells cars (FCV) over regular internal combustion engine cars (ICE).

– The need for high pressure and high temperature sensors that can benefit from SiC hardness and robustness.

• In every case, SiC can handle improved power density with lower power losses, and will help to decrease the size and so the weight of power drivers.

• When ?– Today, current systems are using silicon devices but weight, size, power

efficiency and limited junction T° remain an issue.– According to car manufacturers, SiC could be implemented in large volume by

2009. SiC diodes will be the first target, followed by SiC transistor switch when it will be ready. Use of silicon trench-gate transistor could bring a first solution.



Automotive Application:Hybrid Electrical Vehicle (HEV) requirements.

• DC-DC converter– Goal: to provide a high voltage (400V) to

12V output, with an option to provide a 42V output.

– Typical power rating: 3 to 10kWwith switching frequency of 50-100 kHz

• Inverter (DC-AC 3-phases converter)– Goal: To develop an integrated

motor/controller comprised of the motor and inverter in a single package. The goals for the system include an integrated power electronics system capable of 15 years lifetime and capable of delivering at least 55 kW of power for 18 sec and 30 kW continuous power.

– Up to 300 A per motor phase– Cost < 7$/kW

Three-phase inverter traction drive

Isolated full-bridge step-down dc-dc converter

Each transistor and diode has to handle 400 V and 200 A peaks.

Typical motor: 30 kW, 230 V, 4-pole, 3000 rpm

Typical 400 V DC battery pack



Sales projection for EV, HEV & FCVto 2020 in million units


Forecasted annual sales of EV+HEV+FCV (million units)

0

2

4

6

8

10

12

14

16

2002 2004 2006 2008 2010 2012 2014 2016

Emergence of fuel-cell basedelectrical cars


Sales volume projection for SiC diodes and transistors in automotive applications

Based on average figure of 24 SiC diodes and 10 SiC transistors per car. SiC market share goes from 5% in 2008 to 50% in 2016

Forecasts for SiC diodes & Transistorsvolume in EV, HEV and FCV

0

50

100

150

200

250

300

2002 2004 2006 2008 2010 2012 2014 2016

SiC transistors need (Munits)SiC diodes need (Munits)



SiC / sapphire substrates volume estimation forGaN-based LED production

Market hypothesis:• Illumination high-volume market will not start before 2007• SiC substrates (mainly Cree and Osram) will loose market shares, facing sapphire high

volume productions from Asia• LED ASP will remain around 0.10$ (Emergence of new high-end products with higher ASP

facing ramping-up of low-end, large scale production LEDs with lower ASP)

Technical hypothesis:• Production yield will

reach 85% in 2007• 11,000 LEDs on 2”

sapphire substrate• 16,000 LEDs on 2” SiC

substrate

Number of 2" equivalent substrates to process for GaN-based LED production (Million units)

0,681,15

1,592,12

2,50 2,71 2,95

0,16

0,24

0,27

0,30

0,320,33

0,36

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

2001 2002 2003 2004 2005 2006 2007

SiC (2")Sapphire (2")

SiC-based LEDs represented 25 % of market in 2001 and is

now only 12 % in wafers volume

Optoelectronics


From a material point of view…

SiC substrates sales breakdown over the $30M open market

SiC Material

II-VI + Norstel + IntrinSiC +

Dow Corning + Sixon +Nippon

Steel +SiCrystal +

Others30%

Cree 70%

Total SiC substrates market was in the $90M range in 2004.

This figure includes the internal Cree consumption for LED business

We consider the remaining open market to be ~$30M


Cree business-model evolution and conclusion

• Fact 1: Cree was representing approximately 1/4 of wafers consumption for HB-LEDs production in 2001 and that should decrease down to 10% in 2007.

• Fact 2: Cree is moving to packaged LEDs business.• Fact 3: Osram, the only other SiC user for LED business, is now trying to escape

from Cree monopoly using thin-film technology on sapphire substrates.

• Analysis:– SiC is no more the “ideal” substrate for high performances LEDs: Sapphire can compete

on high-end LEDs segment (see Lumileds, Nichia, …).– Thin-film approach allows now back-face contact possibility, like SiC does -> smaller

dies.– Cree has to move one step ahead, to packaged LEDs, in order to benefit from larger

added-value products.

• Conclusion: – SiC has to find another playground to grow. Opto business is captive to Cree and the

emergence of electronic devices with related applications is the only way to make a profitable business at material or component level.

– SiC has to fight with GaN on RF markets but is the only pertinent solution for high power electronic market, especially for automotive, industry and power distribution.

– SiC transistor is now widely welcome...

CREE & Conclusion

Hig

h Te

chno

logy

Foc

us

SiC material,devices & applications

Evaluation of the 2003-2008 SiC market and analysis of the major technology and industrial trends

89 profiles

2005 edition

Acreo - SwedenAdvanced Power Technology - USACaracal - USACree - USADenso - JPDynex Semiconductor - UKFuji Electric - JPFujitsu Laboratories - JPGE Global Research Center – USAGeneSiC Semiconductor Inc. - USAHitachi Research Laboratory - JPInfineon Technologies - GERInternational Rectifier - ITKansai Electric Power - JPMatsushita Electric Industrial - JPMicrosemi - USAMitsubishi Electric - JPNEC - JPNissan Motor - JPNorse SemiconductorNorthrop Grumman - USAOki Electric Industry - JPOsram Opto Semiconductors - GERPhilips Semiconductors Nijmegen - NLQinetiq - UKRF Micro Devices Charlotte - USARockwell Scientific - USARohm - JPSanyo Electric Company - JPShindengen Electric Laboratories - JPSiced - GERSTMicroelectronics – FR and ITTohoku Electric Power – JPToshiba – JPTransic - SWUnited Silicon Carbide - USA

COMPONENTS

Annealsys - FREpigress - SWLinn High Therm – GERLPE EPI – IT

EQUIPMENTS

Bridgestone - JPCaracal - USACree - USADow Corning - USAHoya Advanced Semiconductor Technologies - JPIntrinsic – USANeosemitech - KoreaNippon Steel – JPNorstel - SWNovasic - FRSemisouth - USAShowa Denko - JPSiCrystal - GERSixon - JPSoitec - FRTechnologies and Devices International - USATohoku Electric PowerToshiba Ceramics, Tocera – JPToyota - JPII VI - USA

MATERIALS

Boston Microsystems - USACornell University – USA

FLX Micro - USAInnovative Scientific Solutions - USAKulite - USAOlivetti I Jet - ITTaitech - USA

MEMS

AIST - JP

APEI - USA

Auburn University - USA

Case Western Reserve University - USA

Centro Nacional De Microelectronica - SP

Chalmers University of Technology - SW

Crhea - FR

F-A University Erlangen Nuremberg – GER

Institut für Kristallzüchtung - GER

INPG – FR

Ioffe Physico-Technical Institute - RUS

Kyoto University - JP

Linköping University - SW

Mississippi State University - USA

Nasa Glenn Research Center - USA

Purdue University - USA

Rensselaer Polytechnic Institute - USA

Rutgers University, SiCLab - USA

Texas A&M University - USA

University of Arkansas - USA

University of Newcastle - UK

University of South Calorina - USA

University of South Florida - USA

R&D CENTERS

EUROPE

ACREO

ACREO AB Electrum 236

SE-164 40 Kista SWEDEN

Tel: +46 8 632 77 00 Fax: +46 8 750 54 30

www.acreo.se Email: [email protected]

Key managers and/or contacts Susan Savage SiC Activity Manager +46 8 632 7808 [email protected]

Company Overview Acreo AB is a non-listed limited company. The majority of the shares are held by the Association FMOF(Mikroelektronisk och Optisk Forskning). The minority owner is the holding company IRECO, controlled by the Swedish Ministry of Industry and the Foundation KKS. ACREO is a result of the merging of IOF (Institute of Optical Research) and IMC (Industrial Microelectronics Center) in 1999. Acreo’s technical development areas are Imaging, Interconnect and Packaging, Photonics, RF and Power Components, Microsystem Technology, Surface Characterisation and System-level Integration. Business Services is dedicated to technology transfer and market support for small and medium-sized companies. Semiconductor technology plays a central role in all operations. Market and customers Open collaboration with all kind industrial players, as Volvo, Ford, Vattenfall or AppliedSensor. As a laboratory, they offer technologies, not products. Agreements and Alliances Partners Partnership type University of Linköping Swedish centre for Sensor Development at

ACREO 2 Mecel in Åmål Volvo in Göteborg Vattenfall AppliedSensor

Linköping university (S-SENCE) : R&D on SiC gas sensor

Hoya Advanced Semiconductor Technology (HAST)

R&D collaboration

Financial data Investors and/or parent company % of

sharesFMOF 60%IRECO AB 40% Spin off AMDS - Advanced Microwave Device Solutions AMDS - Advanced Microwave Device Solutions - is a spin-off company from Acreo launched at the end of 2001 in order to exploit the development of SiC RF components that has been on-going at Acreo since 1997. It has been sold to Intrinsic Inc in 2004. In € million 2003 2004 2005 (est.) Total sales 22,2MSEK 21,2MSEK Employees 169 160 156 In 2004, Acre revenues coming from industrial partners accounted for approximately 44% Main Products SiC Gas sensor : Acreo had worked together with the Swedish centre for Sensor Development at Linköping university (S-SENCE) to develop gas sensors based on the semiconductor material SiC. The collaboration has resulted in a proprietary design based on a MOSFET type component using a catalytic metal as the active gate contact. S-SENCE have made detailed studies of the gas sensing capability of different catalytic metals while Acreo have been responsible for the high temperature MOSFET design. The silicon carbide based sensors, MISiC sensors, can be operated at temperatures up to 700° C and have the advantage of being chemically very inert. These sensors are developed in a project with Volvo in Göteborg and Ford in Dearborne, Michigan, USA to control the SCR, Selective Catalytic Reduction, process, where NO and NO2 are reduced by NH3 in the catalytic converter to nitrogen and water. NH3 is injected into the exhaust gases as urea dissolved in water, which forms NH3 and CO2. According to industry partners, this method will have to be used to fulfill the much stricter legislations for NOx emissions, which are valid from year 2007.

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2003-2009 SiC market analysis for material, devices … SiC market analysis for material, devices and applications ... proposing silicon carbide wafer products. ... SiC Schottky diodes