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TG520-10 Preliminary GaN Hybrid Amplifier
▪ Tel : 919-342-6477 ▪ All specifications may change without notice. ▪ [email protected] ▪ Version 0.3
Product Features Application • Surface Mount Hybrid Type • No matching circuit needed • High Efficiency • High Linearity • Psat 10W Power • Alumina Substrate • GaN HEMT Chip on board
• TRS(Trunked Radio System) • RF Sub-Systems • Base Station
Description The power amplifier module is designed for TETRA (Terrestrial Trunked Radio, formerly known as Trans European Trunked Radio) applications. TETRA networks are already operational in all the traditional PMR market segments, such as Public Safety, Transportation, Utilities, Government, PAMR, Commercial & Industry and Oil & Gas. GaN HEMT technology is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding.
Specifications
PARAMETER Test Condition Min Typ Max
Frequency Range Z0 = ZL = 50 ohm 30MHz 520MHz
Small Signal Gain Vdd =28V,
Idq = 150mA
18dB 20dB
Gain Flatness ± 1dB ± 1.5dB
Return Loss - 8dB - 4dB
Power Gain(@P1dB) Vdd =28V 16dB
Power Gain Flatness (@P1dB)
Vdd =28V 2dB
Output P1dB
Vdd =28V, Idq = 0mA
39dBm
Output P3dB 40dBm
Efficiency @ P3dB 50% 60%
Vdd 28V
Ids Pout = 40dBm 600mA 700mA
Load Mismatch Value all load phase 5:1
Dimensions (W×L×H) 15 × 10 × 5.4 [mm] (TG1)
Package : CP-6C
TG520-10 Preliminary GaN Hybrid Amplifier
▪ Tel : 919-342-6477 ▪ All specifications may change without notice. ▪ [email protected] ▪ Version 0.3
Performance Charts (Small Signal Gain S-Parameter: Vdd=28V, Idq=150mA, T=25 )℃
Performance Charts (Power Gain: Vdd=28V, Idq=0mA, T=25 )℃
Small Signal Gain vs. Frequency
16
17
18
19
20
21
50 150 250 350 450 550 650 750 850 950
Frequency(MHz)
Mag
(dB
)
Return Loss vs. Frequency
-35
-30
-25
-20
-15
-10
-5
0
50 150 250 350 450 550 650 750 850 950
Frequency(MHz)
Mag
(dB
)
S11(dB) S22(dB)
Power Gain vs. Frequency (Vdd=28V)
10
11
12
13
14
15
16
17
18
19
20
30 120 220 320 420 520
Frequency(MHz)
Pow
er G
ain(
dB)
Max P1dB P3dB
P1dB&P3dB vs. Frequency (Vdd=28V)
32
33
34
35
36
37
38
39
40
41
42
30 120 220 320 420 520Frequency(MHz)
Out
put P
ower
(dB
m)
P1dB P3dB
Efficiency vs. Frequency (Vdd=28V)
30
35
40
45
50
55
60
65
70
75
80
30 120 220 320 420 520Frequency(MHz)
Effic
ienc
y(%
)
P1dB P3dB
Pout Current vs. Frequency (Vdd=28V)
0
100
200
300
400
500
600
700
30 120 220 320 420 520Frequency(MHz)
Cur
rent
(mA
)
P1dB P3dB
TG520-10 Preliminary GaN Hybrid Amplifier
▪ Tel : 919-342-6477 ▪ All specifications may change without notice. ▪ [email protected] ▪ Version 0.3
Performance Charts (Pin versus Pout: Vdd=28V, Idq=0mA, T=25 )℃
Vdd=28V@30MHz
9
10
11
12
13
14
15
16
17
18
19
11 14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Pow
er G
ain(
dB)
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
80.000
P_Gain Efficiency
Vdd=28V@30MHz
0
50
100
150
200
250
300
350
400
450
500
11 14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Cur
rent
(mA
)
Current
Vdd=28V@120MHz
10
11
12
13
14
15
16
17
18
19
20
14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Pow
er G
ain(
dB)
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
80.000
P_Gain Efficiency
Vdd=28V@120MHz
0
100
200
300
400
500
600
14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Cur
rent
(mA
)
Current
Vdd=28V@220MHz
9
10
11
12
13
14
15
16
17
18
19
14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Pow
er G
ain(
dB)
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
80.000
P_Gain Efficiency
Vdd=28V@220MHz
0
100
200
300
400
500
600
14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Cur
rent
(mA
)
Current
TG520-10 Preliminary GaN Hybrid Amplifier
▪ Tel : 919-342-6477 ▪ All specifications may change without notice. ▪ [email protected] ▪ Version 0.3
Vdd=28V@320MHz
8
9
10
11
12
13
14
15
16
17
18
11 14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Pow
er G
ain(
dB)
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
P_Gain Efficiency
Vdd=28V@320MHz
0
100
200
300
400
500
600
700
11 14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Cur
rent
(mA
)
Current
Vdd=28V@420MHz
7
8
9
10
11
12
13
14
15
16
17
11 14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Pow
er G
ain(
dB)
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
P_Gain Efficiency
Vdd=28V@420MHz
0
100
200
300
400
500
600
11 14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Cur
rent
(mA
)
Current
Vdd=28V@520MHz
7
8
9
10
11
12
13
14
15
16
17
8 11 14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Pow
er G
ain(
dB)
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
P_Gain Efficiency
Vdd=28V@520MHz
0
100
200
300
400
500
600
700
8 11 14 17 20 23 26 29 32 35 38 41
Output Power(dBm)
Cur
rent
(mA
)
Current
TG520-10 Preliminary GaN Hybrid Amplifier
▪ Tel : 919-342-6477 ▪ All specifications may change without notice. ▪ [email protected] ▪ Version 0.3
Document Revision History Part Number Release Date Version Modification Data Sheet Status
TG520-10 20101117 0.3 ▪ Specifications:
- improved typical Power Gain(@P1dB) from 11dB to
16dB
- changed max Frequency from 550MHz to 520MHz
- added Load Mismatch Value 5:1 @ all load phase
- added Recommended Pattern diagram
Preliminary
TG520-10 20100908 0.2 ▪ Part number changed from TG520-08-10 to TG520-10
▪ Specifications: deleted 38dBm min of Output P1dB
▪ Specifications: deleted 39dBm min of Output P3dB
▪ Specifications: changed typical output P3dB from 39.5dBm
to 40dBm
▪ Specifications: added 600mA typical for Ids
Preliminary
TG520-08-10 20100805 0.1 --- Preliminary
Ordering Information No Part Number Description
1 TG520-10 520MHz power amplifier module of 16dB Power Gain
2 TG520-10-EVB-kit 520MHz power amplifier module of 16dB Power Gain attached on evaluation board with heat sink
* Electrical parameters of TG520-10-EVB-kit are all same as TG520-10. For more information, please contact RFHIC.
TG520-10 Preliminary GaN Hybrid Amplifier
▪ Tel : 919-342-6477 ▪ All specifications may change without notice. ▪ [email protected] ▪ Version 0.3
Block Diagram (Type: CP-6C)
Package Dimensions (Type: CP-6C)
No Description No Description 1 RF Input 7 GND 2 GND 8 GND 3 GND 9 RF Output 4 Gate Bias (-V) 10 GND 5 GND 11 GND 6 Drain Bias (+V) 12 GND
! ESD sensitive
Observe precautions for handling, testing and packaging.
Vdd(+V)Vgg(-V)
Input
Matching Circuit
Output
Matching Circuit
Input Output
Recommended Pattern
RFHICUSA Corporation (RFHICUSA) reserves the right to make changes to any products herein or to discontinue any product at any time without notice. RFHICUSA do not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. The product specifications herein expressed have been carefully checked and are assumed to be reliable. However, RFHICUSA disclaims liability for inaccuracies and strongly recommends buyers to verify that the information they are using is current before placing purchase orders. RFHICUSA products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHICUSA and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such use. RFHICUSA’s liability under or arising out of damages, claims of whatsoever kind and nature which RFHICUSA products could cause shall be limited in amount to the net purchase price of the products sold to buyer by RFHICUSA.
