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Recent progress in 2D materials has demonstrated fascinating potential applications in next-generation optical/electrical devices. To achieve controllable tune the carrier type and Fermi level in the 2D materials, the direct deposition of organic molecular layers on the 2D materials is a promising approach to avoid structural damage, thereby retaining their highly desired optical/electrical properties. In particular, the interfacial properties, including charge transfer and energy level alignment (ELA) and change in the electronic properties of 2D interlayer upon molecular deposition is still not well understood. In this study, organic molecules C 60 F 48 was chose due to their higher electron affinity as a potential electron acceptor. The electronic properties of a single-layer WSe 2 sandwiched between a graphite substrate and organic molecules C 60 F 48 are investigated. 0 10 20 30 40 0 2 4 6 8 Height (Å) Distance (nm) 7 Å SL-WSe 2 Graphite Energy level alignment at C 60 F 48 /WSe 2 /Graphite interface Zhibo Song, Ding Zijing, Yu Li Huang and Andrew Thye Shen Wee Department of Physics, National University of Singapore Introduction Methodology Results (con’t) Results Conclusion STM/S First‐principles method based density functional theory. -1.0 -0.5 0.0 0.5 1.0 VBM dI/dV (a. u.) Tip bias (V) 2.00 V STS of SL-WSe 2 -1.10V +0.90V CBM 0 1 2 3 4 5 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 Energy (eV) Distance (nm) Valence band Conduction band 1.70eV 1.94eV Pristine WSe 2 C 60 F 48 /WSe 2 b SL-WSe 2 dI/dV spectra -1.5 -1.0 -0.5 0.0 0.5 1.0 dI/dV (a.u.) Tip bias (V) 0nm +0.4nm +1.0nm +1.4nm +1.6nm +1.9nm +2.3nm +2.6nm +3.1nm +5.5nm Pristine WSe 2 C 60 F 48 /WSe 2 CBM VBM Distance c b c d d a Monolayer WSe 2 on graphite grown by CVD method Inserted lateral profile reveals a thickness of ~7 Å for the WSe 2 film, which corresponds to the height of a monolayer WSe 2 . The lateral size of the WSe 2 flakes is over hundreds nm to several μm, and bare graphite surface is visible in the large-scale images. As revealed by the atomically resolved STM image. triangle crystal lattices are assigned to the top-layer Se atoms. The WSe 2 unit cell with a lattice constant of 3.4 ± 0.1 Å. Furthermore, an electronic bandgap of 1.95 ± 0.05 eV is obtained from the dI/dV curve. A typical moiré superstructure arising from the lattice mismatch between graphite and WSe 2 is visible. As a proposed structural model, the Se atoms are seated on top of the underlying C atoms (gold color) for bright half and the hollow sites for the dim half. a SL-WSe 2 C 60 F 48 a Tunable band structure of SL-WSe 2 with C 60 F 48 Charge transfer and work function shifts on different substrates based on DFT calculation. In contrast to the uniform WSe 2 surface observed far away from the molecular island (or before molecular deposition), a contrast variation is visible close to the island (the upper right corner Fig 2b) indicating that the electronic properties of the underlying WSe 2 layer are modified. To measure the electronic structure changes, a series of STS spectra was taken as a function of distance to the C 60 F 48 molecular island edge. Results reveal an upward shift of the VBM relative to the Fermi level is 0.62 eV, while the corresponding shift of the CBM is 0.38 eV, implying a bandgap decrease of 0.24 eV. The DCD plots reveal that the molecule is negatively charged accumulated at the lower half and the graphite is positively charged for both cases. For the WSe 2 interlayer, the top Se layer facing the molecule is hole-accumulated, while the bottom facing graphite is electron-accumulated. The total amount of charge transfer per molecule (ΔQ total ) from bare graphite to C 60 F 48 reaches -0.40 e, and reduces slightly to -0.37 e with the SL-WSe 2 interlayer. , The contribution from the WSe 2 interlayer is 0.12e, which is only half of that from the graphite substrate. In contrast, the corresponding molecular dipole moments are 1.7 e·Å for the former and 2.6 e·Å for the later. (a) Energy levels for free graphite covered with a SL-WSe 2 and free C 60 F 48. (b) Energy level realignments after contact. VBM and CBM are determined by STS.

-1.0 -0.5 0.0 0.5 1.0 Distance (nm)surface/Posters... · Distance (nm) 7 Å SL-WSe 2 e Energy level alignment at C 60 F 48 /WSe 2 /Graphite interface Zhibo Song, Ding Zijing, Yu Li

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Page 1: -1.0 -0.5 0.0 0.5 1.0 Distance (nm)surface/Posters... · Distance (nm) 7 Å SL-WSe 2 e Energy level alignment at C 60 F 48 /WSe 2 /Graphite interface Zhibo Song, Ding Zijing, Yu Li

Recent progress in 2D materials has demonstrated fascinating potential applications in next-generation opticalelectrical devices To achieve controllable tune the carrier type and Fermi level in the 2D materials the direct deposition of organic molecular layers on the 2D materials is a promising approach to avoid structural damage thereby retaining their highly desired opticalelectrical properties

In particular the interfacial properties including charge transfer and energy level alignment (ELA) and change in the electronic properties of 2D interlayer upon molecular deposition is still not well understood

In this study organic molecules C60F48 was chose due to their higher electron affinity as a potential electron acceptor The electronic properties of a single-layer WSe2

sandwiched between a graphite substrate and organic molecules C60F48 are investigated

0 10 20 30 40

0

2

4

6

8

He

igh

t (Aring

)

Distance (nm)

7 Aring

SL-WSe2

Grap

hite

Energy level alignment at C60F48WSe2Graphite interface

Zhibo Song Ding Zijing Yu Li Huang and Andrew Thye Shen WeeDepartment of Physics National University of Singapore

Introduction

Methodology Results (conrsquot)

Results

Conclusion

STMS

First‐principles method based density functional theory

-10 -05 00 05 10

VBM

dId

V (

a u

)

Tip bias (V)

200 V

STS of SL-WSe2

-110V +090V

CBM

0 1 2 3 4 515

10

05

00

-05

-10

-15

-20

En

erg

y (

eV

)

Distance (nm)

Valence band

Conduction band

17

0eV

19

4eV

Pri

stin

eW

Se2

C6

0F 4

8

WSe

2

b

SL-WSe2

dIdV spectra

-15 -10 -05 00 05 10

dId

V (

au

)

Tip bias (V)

0nm

+04nm

+10nm

+14nm

+16nm

+19nm

+23nm

+26nm

+31nm

+55nmPristine WSe2

C60F48 WSe2

CBM

VBM

Distancec

b

c d

d

a

Monolayer WSe2 on graphite grown by CVD method

Inserted lateral profile reveals a thickness of ~7 Aring for the WSe2 film which corresponds to the height of a monolayer WSe2 The lateral size of the WSe2 flakes is over hundreds nm to several microm and bare graphite surface is visible in the large-scale images

As revealed by the atomically resolved STM image triangle crystal lattices are assigned to the top-layer Se atoms The WSe2 unit cell with a lattice constant of 34 plusmn 01 Aring Furthermore an electronic bandgap of 195 plusmn 005 eV is obtained from the dIdV curve

A typical moireacute superstructure arising from the lattice mismatch between graphite and WSe2 is visible As a proposed structural model the Se atoms are seated on top of the underlying C atoms (gold color) for bright half and the hollow sites for the dim half

a

SL-WSe2

C60F48a

Tunable band structure of SL-WSe2 with C60F48

Charge transfer and work function shifts on different substrates based on DFT calculation

In contrast to the uniform WSe2 surface observed far away from the molecular island (or before molecular deposition) a contrast variation is visible close to the island (the upper right corner Fig 2b) indicating that the electronic properties of the underlying WSe2 layer are modified

To measure the electronic structure changes a series of STS spectra was taken as a function of distance to the C60F48 molecular island edge Results reveal an upward shift of the VBM relative to the Fermi level is 062 eV while the corresponding shift of the CBM is 038 eV implying a bandgap decrease of 024 eV

The DCD plots reveal that the molecule is negatively charged accumulated at the lower half and the graphite is positively charged for both cases For the WSe2

interlayer the top Se layer facing the molecule is hole-accumulated while the bottom facing graphite is electron-accumulated

The total amount of charge transfer per molecule (ΔQtotal) from bare graphite to C60F48 reaches -040 e and reduces slightly to -037 e with the SL-WSe2 interlayer The contribution from the WSe2 interlayer is 012e which is only half of that from the graphite substrate In contrast the corresponding molecular dipole moments are 17 eAring for the former and 26 eAring for the later

(a) Energy levels for free graphite covered with a SL-WSe2 and free C60F48 (b) Energy level realignments after contact VBM and CBM are determined by STS