Upload
hoangdung
View
225
Download
0
Embed Size (px)
Citation preview
www.rohm.com©2010 ROHM Co., Ltd. All rights reserved.
0.9V Drive Nch + Nch MOSFET EM6K34
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features1) High speed switing.
2) Small package(EMT6).
3)Ultra low voltage drive(0.9V drive).
ApplicationSwitching
Inner circuit
Packaging specificationsPackage Taping
Code T2R
Basic ordering unit (pieces) 8000
EM6K34
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Limits Unit
Drain-source voltage VDSS 50 V
Gate-source voltage VGSS 8 V
Continuous ID 200 mA
Pulsed IDP 800 mA
Continuous Is 125 mA
Pulsed Isp 800 mA
150 mW / TOTAL
120 mW / ELEMENT
Channel temperature Tch 150 CRange of storage temperature Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Thermal resistanceSymbol Limits Unit
833 C/ W /TOTAL
1042 C/ W /ELEMENT
* Each terminal mounted on a recommended land.
Type
Source current(Body Diode)
Drain current
Parameter
Parameter
Channel to Ambient Rth (ch-a)
PDPower dissipation
*
Abbreviated symbol : K34
*2
*1
*1
EMT6
(1) (2) (3)
(4)(5)(6)
(1) Tr1 Source(2) Tr1 Gate(3) Tr2 Drain(4) Tr2 Source(5) Tr2 Gate(6) Tr1 Drain
∗1 ESD PROTECTION DIODE∗2 BODY DIODE
∗2
∗2
∗1
∗1
(1)
(6)
(3)
(4)
(2)
(5)
1/5 2010.11 - Rev.A
Data Sheet
www.rohm.com©2010 ROHM Co., Ltd. All rights reserved.
EM6K34
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS - - 10 A VGS=8V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 50 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS - - 1 A VDS=50V, VGS=0V
Gate threshold voltage VGS (th) 0.3 - 0.8 V VDS=10V, ID=1mA
- 1.6 2.2 ID=200mA, VGS=4.5V
- 1.7 2.4 ID=200mA, VGS=2.5V
- 2.0 2.8 ID=200mA, VGS=1.5V
- 2.2 3.3 ID=100mA, VGS=1.2V
- 3.0 9.0 ID=10mA, VGS=0.9V
Forward transfer admittance l Yfs l 0.2 - - S ID=200mA, VDS=10V
Input capacitance Ciss - 26 - pF VDS=10V
Output capacitance Coss - 6 - pF VGS=0V
Reverse transfer capacitance Crss - 3 - pF f=1MHz
Turn-on delay time td(on) - 5 - ns ID=100mA, VDD 25V
Rise time tr - 8 - ns VGS=4.5V
Turn-off delay time td(off) - 17 - ns RL=250Fall time tf - 43 - ns RG=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Forward Voltage VSD - - 1.2 V Is=200mA, VGS=0V
*Pulsed
Conditions
Conditions
Parameter
Parameter
Static drain-source on-stateresistance
RDS (on)
*
*
*
*
*
*
*
*
*
*
*
2/5 2010.11- Rev.A
Data Sheet
www.rohm.com©2010 ROHM Co., Ltd. All rights reserved.
EMK6K34
Electrical characteristics curves
100
1000
10000
0.001 0.01 0.1 1
VGS= 1.2V
Pulsed
100
1000
10000
0.001 0.01 0.1 1
VGS= 0.9V
Pulsed
0
0.05
0.1
0.15
0.2
0 0.2 0.4 0.6 0.8 1
Ta=25CPulsed
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2VVGS= 0.9V
VGS= 0.8V
VGS= 0.7V0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1
VDS= 10V
Pulsed
Ta= 125CTa= 75CTa= 25C
Ta= 25C
100
1000
10000
0.001 0.01 0.1 1
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
Ta= 25CPulsed
0
0.05
0.1
0.15
0.2
0 2 4 6 8 10
VGS= 0.7V
Ta=25CPulsed
VGS= 0.9V
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.8V
100
1000
10000
0.001 0.01 0.1 1
VGS= 2.5V
Pulsed
100
1000
10000
0.001 0.01 0.1 1
VGS= 4.5V
Pulsed
100
1000
10000
0.001 0.01 0.1 1
VGS= 1.5V
Pulsed
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)
DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]
DR
AIN
CU
RR
EN
T :
I D[A
]
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
ST
AT
IC D
RA
IN-S
OU
RC
E O
N-S
TA
TE
RE
SIS
TA
NC
E :
RD
S( o
n)[m
]
DRAIN-CURRENT : ID[A]
ST
AT
IC D
RA
IN-S
OU
RC
E O
N-S
TA
TE
RE
SIS
TA
NC
E :
RD
S( o
n)[m
]
DRAIN-CURRENT : ID[A]
ST
AT
IC D
RA
IN-S
OU
RC
E O
N-S
TA
TE
RE
SIS
TA
NC
E :
RD
S( o
n)[m
]
DRAIN-CURRENT : ID[A]
ST
AT
IC D
RA
IN-S
OU
RC
E O
N-S
TA
TE
RE
SIS
TA
NC
E :
RD
S( o
n)[m
]
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ)
DRAIN-CURRENT : ID[A]
ST
AT
IC D
RA
IN-S
OU
RC
E O
N-S
TA
TE
RE
SIS
TA
NC
E :
RD
S( o
n)[m
]
DR
AIN
CU
RR
EN
T :
I D[A
]
DR
AIN
CU
RR
EN
T :
I D[A
]
Ta= 125CTa= 75CTa= 25CTa= 25C
Ta= 125CTa= 75CTa= 25CTa= 25C
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ)
DRAIN-CURRENT : ID[A]
ST
AT
IC D
RA
IN-S
OU
RC
E O
N-S
TA
TE
RE
SIS
TA
NC
E :
RD
S( o
n)[m
]
Ta= 125CTa= 75CTa= 25CTa= 25C
Ta= 125CTa= 75CTa= 25CTa= 25C
Ta= 125CTa= 75CTa= 25CTa= 25C
3/5 2010.11 - Rev.A
Data Sheet
www.rohm.com©2010 ROHM Co., Ltd. All rights reserved.
EM6K34
0.01
0.1
1
0 0.5 1 1.5
VGS=0V
Pulsed
Ta= 125CTa= 75CTa= 25CTa= 25C
0.1
1
10
0.01 0.1 1
VDS= 10V
Pulsed
Ta=25CTa=25CTa=75CTa=125C
1
10
100
1000
0.01 0.1 1
tf
td(on)
td(off)
Ta=25CVDD=25V
VGS=4.5V
RG=10
tr
0
1
2
3
4
0 0.5 1 1.5
0
1000
2000
3000
4000
5000
0 1 2 3 4 5 6 7 8
Ta=25CPulsed
ID= 0.20A
ID= 0.01A
Fig.14 Typical Capacitance vs. Drain-Source Voltage
Fig.13 Switching Characteristics
DRAIN-CURRENT : ID[A]
1
10
100
1000
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25Cf=1MHzVGS=0V
Fig.15 Typical Capacitance vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : VDS[V]
CA
PA
CIT
AN
CE
: C
[p
F]
TOTAL GATE CHARGE : Qg [nC]
GA
TE
-SO
UR
CE
VO
LT
AG
E :
VG
S [
V]
SW
ITC
HIN
G T
IME
: t
[ns
]
Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
ST
AT
IC D
RA
IN-S
OU
RC
E O
N-S
TA
TE
RE
SIS
TA
NC
E :
RD
S( O
N)[
m
]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
SO
UR
CE
CU
RR
EN
T :
I s [
A]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Forward Transfer Admittance vs. Drain Current
FO
RW
AR
D T
RA
NS
FE
R
AD
MIT
TA
NC
E :
|Yfs
| [S
]
DRAIN-CURRENT : ID[A]
Ta=25CVDD=25V
ID= 0.2A
RG=10Pulsed
4/5 2010.11- Rev.A
Data Sheet
www.rohm.com©2010 ROHM Co., Ltd. All rights reserved.
EM6K34
Measurement circuits
NoticeThis product might cause chip aging and breakdown under the large electrified environment. Please consider to designESD protection circuit.
Fig.1-1 Switching time measurement circuit
VGS
RG
VDS
D.U.T.
ID
RL
VDD
Fig.1-2 Switching waveforms
90%
90% 90%
10% 10%
50%10%50%
VGS
Pulse width
VDS
ton toff
trtd(on) tftd(off)
5/5 2010.11- Rev.A
R1010Awww.rohm.com© 2010 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support Systemhttp://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
No t e s
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu-nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.