08n80

2003-07-02Page 1

SPP08N80C3SPA08N80C3Final data

Cool MOS Power Transistor VDS 800 VRDS(on) 0.65

ID 8 A

Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

P-TO220-3-31 P-TO220-3-1

P-TO220-3-31

12

3

Marking08N80C308N80C3

Type Package Ordering CodeSPP08N80C3 P-TO220-3-1 Q67040_S4436SPA08N80C3 P-TO220-3-31 Q67040-S4437

Maximum RatingsParameter Symbol Value Unit

SPAContinuous drain currentTC = 25 C

TC = 100 C

ID 8

5.1

81)

5.11)

A

Pulsed drain current, tp limited by Tjmax ID puls 24 24 AAvalanche energy, single pulseID=1.6A, VDD=50V

EAS 340 340 mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=8A, VDD=50V

EAR 0.2 0.2

Avalanche current, repetitive tAR limited by Tjmax IAR 8 8 AGate source voltage VGS 20 20 VGate source voltage AC (f >1Hz) VGS 30 30Power dissipation, TC = 25C Ptot 104 40 W

SPP

Operating and storage temperature Tj , Tstg -55...+150 C

2003-07-02Page 2


Maximum RatingsParameter Symbol Value UnitDrain Source voltage slopeVDS = 640 V, ID = 8 A, Tj = 125 C

dv/dt 50 V/ns

Thermal CharacteristicsParameter Symbol Values Unit

min. typ. max.Thermal resistance, junction - case RthJC - - 1.2 K/W

Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8

Thermal resistance, junction - ambient, leaded RthJA - - 62

Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80

Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3)

Tsold - - 260 C

Electrical Characteristics, at Tj=25C unless otherwise specifiedParameter Symbol Conditions Values Unit

min. typ. max.Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 800 - - V

Drain-Source avalanchebreakdown voltage

V(BR)DS VGS=0V, ID=8A - 870 -

Gate threshold voltage VGS(th) ID=470A, VGS=VDS 2.1 3 3.9

Zero gate voltage drain current IDSS VDS=800V, VGS=0V,Tj=25C

Tj=150C

--

0.5-

20200

A

Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=5.1ATj=25C

Tj=150C

--

0.561.5

0.65

-

Gate input resistance RG f=1MHz, open drain - 0.7 -

2003-07-02Page 3


Electrical CharacteristicsParameter Symbol Conditions Values Unit

min. typ. max.Transconductance gfs VDS2*ID*RDS(on)max,

ID=5.1A

- 5.5 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 1100 - pFOutput capacitance Coss - 500 -Reverse transfer capacitance Crss - 25 -

Effective output capacitance,4)

energy relatedCo(er) VGS=0V,

VDS=0V to 480V

- 31.8 -

Effective output capacitance,5)

time relatedCo(tr) - 70 -

Turn-on delay time td(on) VDD=400V, VGS=0/10V,

ID=8A,

RG=10

- 25 - nsRise time tr - 15 -Turn-off delay time td(off) - 65 75Fall time tf - 7 10

Gate Charge CharacteristicsGate to source charge Qgs VDD=640V, ID=8A - 4.6 - nCGate to drain charge Qgd - 21 -

Gate charge total Qg VDD=640V, ID=8A, VGS=0 to 10V

- 40 52

Gate plateau voltage V(plateau) VDD=640V, ID=8A - 6 - V

1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.3Soldering temperature for TO-263: 220C, reflow4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2003-07-02Page 4


Electrical CharacteristicsParameter Symbol Conditions Values Unit

min. typ. max.Inverse diode continuousforward current

IS TC=25C - - 8 A

Inverse diode direct current,

pulsed

ISM - - 24

Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 VReverse recovery time trr VR=640V, IF=IS ,

diF/dt=100A/s

- 550 - nsReverse recovery charge Qrr - 7 - CPeak reverse recovery current Irrm - 24 - A

Peak rate of fall of reverse recovery current

dirr/dt Tj=25C - 500 - A/s

Typical Transient Thermal CharacteristicsSymbol Value Unit Symbol Value Unit

SPA SPARth1 0.017 0.017 K/W Cth1 0.0001741 0.0001741 Ws/KRth2 0.032 0.032 Cth2 0.0006598 0.0006598Rth3 0.06 0.06 Cth3 0.0009193 0.0009193Rth4 0.245 0.189 Cth4 0.002607 0.002607Rth5 0.266 0.414 Cth5 0.005878 0.007619Rth6 0.101 2.518 Cth6 0.051 0.412

SPP SPP

External Heatsink Tj Tcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

2003-07-02Page 5


1 Power dissipationPtot = f (TC)

0 20 40 60 80 100 120 C 160

TC

0

10

20

30

40

50

60

70

80

90

100

W120

SPP08N80C3

Pto

t

2 Power dissipation FullPAKPtot = f (TC)

0 20 40 60 80 100 120 C 150 TC

0

5

10

15

20

25

30

35

W

45

Pto

t

3 Safe operating areaID = f ( VDS )parameter : D = 0 , TC=25C

10 0 10 1 10 2 10 3 V VDS

-2 10

-1 10

0 10

1 10

2 10

A

I D

tp = 0.001 mstp = 0.01 mstp = 0.1 mstp = 1 msDC

4 Safe operating area FullPAKID = f (VDS)parameter: D = 0, TC = 25C

10 0 10 1 10 2 10 3 V VDS

-2 10

-1 10

0 10

1 10

2 10

A

I D

tp = 0.001 mstp = 0.01 mstp = 0.1 mstp = 1 mstp = 10 msDC

2003-07-02Page 6


5 Transient thermal impedanceZthJC = f (tp)parameter: D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp

-4 10

-3 10

-2 10

-1 10

0 10

1 10 K/W

Z thJ

C

D = 0.5D = 0.2D = 0.1D = 0.05D = 0.02D = 0.01single pulse

6 Transient thermal impedance FullPAKZthJC = f (tp)parameter: D = tp/t

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp

-4 10

-3 10

-2 10

-1 10

0 10

1 10 K/W

Z thJ

C

D = 0.5D = 0.2D = 0.1D = 0.05D = 0.02D = 0.01single pulse

7 Typ. output characteristicID = f (VDS); Tj=25Cparameter: tp = 10 s, VGS

0 4 8 12 16 20 V 26 VDS

0

2

4

6

8

10

12

14

16

18

20

22

A26

I D

4V

5V

5.5V

6V

6.5V

20V8V7V

8 Typ. output characteristicID = f (VDS); Tj=150Cparameter: tp = 10 s, VGS

0 4 8 12 16 20 V 26 VDS

0

1

2

3

4

5

6

7

8

9

10

11

A13

I D

4V

4.5V

5V

5.5V

20V6.5V6V

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9 Typ. drain-source on resistanceRDS(on)=f(ID)parameter: Tj=150C, VGS

0 2 4 6 8 10 A 13 ID

1

1.5

2

2.5

3

4

RD

S(on

)

20V

4.5V

5V

5.5V

4V

6.5V

6V

10 Drain-source on-state resistanceRDS(on) = f (Tj) parameter : ID = 5.1 A, VGS = 10 V

-60 -20 20 60 100 C 180

Tj

0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.6 SPP08N80C3

R DS(

on)

typ

98%

11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)maxparameter: tp = 10 s

0 2 4 6 8 10 12 14 16 V 20 VGS

0

2

4

6

8

10

12

14

16

18

20

22

A26

I D

25C

150C

12 Typ. gate chargeVGS = f (QGate) parameter: ID = 8 A pulsed

0 10 20 30 40 50 nC 70QGate

0

2

4

6

8

10

12

V

16 SPP08N80C3

VG

S

0,8 VDS maxDS maxV0,2

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13 Forward characteristics of body diodeIF = f (VSD)parameter: Tj , tp = 10 s

0 0.4 0.8 1.2 1.6 2 2.4 V 3VSD

-1 10

0 10

1 10

2 10

A

SPP08N80C3

I F

Tj = 25 C typ

Tj = 25 C (98%)

Tj = 150 C typ

Tj = 150 C (98%)

14 Avalanche SOAIAR = f (tAR)par.: Tj 150 C

10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tAR

0

1

2

3

4

5

6

A

8

I AR

Tj(START)=25C

Tj(START)=125C

15 Avalanche energy EAS = f (Tj)par.: ID = 1.6 A, VDD = 50 V

25 50 75 100 C 150 Tj

0

50

100

150

200

250

mJ

350

EAS

16 Drain-source breakdown voltageV(BR)DSS = f (Tj)

-60 -20 20 60 100 C 180

Tj

720

740

760

780

800

820

840

860

880

900

920

940

V980 SPP08N80C3

V(B

R)D

SS

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17 Avalanche power lossesPAR = f (f )parameter: EAR=0.2mJ

10 4 10 5 10 6 Hz f

0

20

40

60

80

100

120

140

160

W200

PAR

18 Typ. capacitancesC = f (VDS)parameter: VGS=0V, f=1 MHz

0 100 200 300 400 500 600 V 800 VDS

-1 10

0 10

1 10

2 10

3 10

4 10 pF

C

Ciss

Coss

Crss

19 Typ. Coss stored energyEoss=f(VDS)

0 100 200 300 400 500 600 V 800 VDS

0

1

2

3

4

5

6

7

J

9

Eos

s

2003-07-02Page 10


Definition of diodes switching characteristics

2003-07-02Page 11


P-TO-220-3-1

A

BA0.25 M

2.8

15.3

80.

6

2.54

0.75 0.1

0.131.27

4.44B

9.98

0.4

80.05

All metal surfaces tin plated, except area of cut.

C

0.2

10 0.4

3.7

C

0.5 0.1

0.9

5.23 13

.50

.5

3x

Metal surface min. x=7.25, y=12.3

2x

0.2

0.221.17

0.22.51

P-TO-220-3-31 (FullPAK)

Please refer to mounting instructions (application note AN-TO220-3-31-01)

2003-07-02Page 12


Published byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 Mnchen Infineon Technologies AG 1999All Rights Reserved. Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. InformationFor further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.

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