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1 1 MOSFETs Physical structure and operation of the MOS field-effect transistor Current-voltage characteristics for MOSFETs Using MOSFETs for logic gates Metal Oxide Semiconductor Field Effect Transistor Overview 2 MOSFETs Device Structure and Physical Operation

05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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Page 1: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

• Physical structure and operation of the MOS field-effect transistor

• Current-voltage characteristics for MOSFETs

• Using MOSFETs for logic gates

• Metal Oxide Semiconductor Field Effect Transistor

Overview

2

MOSFETs

Device Structure and Physical Operation

Page 2: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

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MOSFETs

Page 3: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

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MOSFETs

Page 4: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

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MOSFETs

Page 5: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

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MOSFETs

Consider a process technology for which Lmin = 0.4 μA, tox = 8 nm, μn = 450 cm2/V-s, and Vt = 0.7V. Find Cox and kn’. For a MOSFET with W/L = 8 μm / 0.8 μm, calculate the values of VOV, VGS, and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 100 μA. For the device found above find the values of VOV and VGS required to cause the device to operate as a 1000-Ω resistor for a very small VDS.

Page 6: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

Consider a process technology for which Lmin = 0.4 μA, tox = 8 nm, μn = 450 cm2/V-s, and Vt = 0.7V. Find Cox and kn’. For a MOSFET with W/L = 8 μm / 0.8 μm, calculate the values of VOV, VGS, and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 100 μA. For the device found above find the values of VOV and VGS required to cause the device to operate as a 1000-Ω resistor for a very small VDS.

12

MOSFETs

Consider a process technology for which Lmin = 0.4 μA, tox = 8 nm, μn = 450 cm2/V-s, and Vt = 0.7V. Find Cox and kn’. For a MOSFET with W/L = 8 μm / 0.8 μm, calculate the values of VOV, VGS, and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 100 μA. For the device found above find the values of VOV and VGS required to cause the device to operate as a 1000-Ω resistor for a very small VDS.

Page 7: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

Current-Voltage Characteristic

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MOSFETs

Page 8: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

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MOSFETs

2.5V

1.5V

Assume VTN = 0.5 V, kpn = 230 μA/V2

Assume W = 3 μm and L = 0.25 μm

Page 9: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

0.6V

0.4V

Assume VTN = 0.5 V, kpn = 230 μA/V2

Assume W = 3 μm and L = 0.5 μm

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MOSFETs

100 mV

2.5V

Assume VTN = 0.5 V, kpn = 230 μA/V2

Assume W = 1 μm and L = 10 μm

Page 10: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

1.5 V

2.5V

Assume VTN = 0.5 V, kpn = 230 μA/V2

Assume W = 1 μm and L = 10 μm

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MOSFETs

Drive an LED

Page 11: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

What about PFETs?

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MOSFETs

Page 12: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

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MOSFETs

Page 13: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

Logic GatesInverter

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MOSFETs

Logic Gates2 input NAND

Page 14: 05 ECE326 Chapter05 MOSFETsjokling/courses/ece326/05_ECE326_Chapter05_MOSFETs.pdfMicrosoft PowerPoint - 05_ECE326_Chapter05_MOSFETs.pptx Author: jokling Created Date: 3/19/2020 4:22:08

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MOSFETs

Logic Gates2 input NOR

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MOSFETs

Logic Gates

F AB CD