5-17 RIG
5-18
E xt
in ct
io n
R at
io (d
5-19 0 (n=0) 45 -3dB -1dB
5-19
Hs Hn Hc
6-1
6-2
(Nucleation Field)Hn :
Hn 6-4
Hc : GMF
Hc Hn GMF Hc 6-3
6-2 GTD
Hex(Oe)
6-2.
RIG RIG GMF RIG Hs 6-3 GTDETD Hs 6- 4 GSF -2085
6-3 GTD ETD
6-4 GSF
6-5
H s
(O e)
S at
ur at
io n
Fi el
d H
s( O
D em
ag ne
tiz in
g F
ac to
r N
6-3. 6-3-1.
6-6 GMF GMF (hysteresis)() Hc GMF
GMF Hc 400(Oe) 2000(Oe) Hc Hc
6-6 GMF Hex-θ
6-7 GMF Hc Hc GMF
6-7 Hc
Hex(Oe)
C oe
rc iv
e Fo
rc e
(k A
GMFGMF GMF GMF
GMF 6-8
6-8
Hc 6-7 Hc Hc Hc Hc
GMF
GMF GMF 40 3000(Oe) (25)GMF 1 400(Oe)
Magnetic Garnet
Single Crystal
Chip tray
Direction of rotation
Ray of light
Direction of magnetization
6-4.
RIG ( Tcomp. )( Tc )() 220300RIG () 0 0 RIG () 0 () RIG
6-9 GMF GMF-10-10 RIG ()GMF 6-10 GMF , GMF
6-9
6-10
Table.7-1.
Item code Index () A 0.2 % E 1300 – 1650 nm 0.2 % N
X
7-1 ”A” “E”
RIG 2m 5m 5m
10mm
AR 2m 20m 20m
10mm
AR 50m 30m 350m
350m 5
9-2 AR
1mm (- 0.2)mm 1mm2mm (×0.8)mm
RIG 2m 2m 5m
5m
AR < 2m 2m 20m
20m
AR 50m 10m
10m 30m 30m
5
9-2. AR (pin-hole)
9-1 ()() 300µm 400µm
9-1
9-2 AR 9-2 AR AR AR 9-3
0
0.1
0.2
0.3
0.4
0.5
0 20 40 60 80 100 Size of a defect (m)
In se
rti on
L os
s( dB
Beam Diameter 400m
9-3 AR
9-3. RIG AR
9-4 RIG () AR 2
9-4 RIG
9-5
In se
rti on
L os
s (d
beam radius ; 300m optical effective area ; 750m
0
0.05
0.1
0.15
0.2
0 1 2 3 4 5 Width of a scratch (μm)
In se
rti on
L os
s( dB
R ef
le ct
io n(
Beam Diameter = 300m
10. 10-1. (Growth Striation)
10-1 () GGG (LPE ) RIG GGG GGG RIG 10-1
RIG
10-1
10-2. (Swirl)
10-1 V LPE RIG RIG
10-3. (Surface Undulation)