2009/1/15*

Outlinem-PIC

Small-angle X-ray scattering (SAXS)

X(Spring-8)

2009/1/15*

2009/1/15*m-PIC30 cm

2009/1/15*micro-Pixel Chamber(m-PIC)2X*10cmm-PIC 10cm10cm (512ch), 30cm30cm(1536ch)

GEM(gas electron multiplier) gain 310 m-PIC gain 1,0005,000

X100 mm (93 % @ 8 keV)pixel pitch 400 m

2009/1/15*DAQ100 MHzASD : m-PICchargedigital: anode, cathodedigital (X, T) (Y, T)

2009/1/15*m-PICm-PICXe 70% C2H6 30% 1 atm1 mmX 12 kVX10 Mcps /mm2

20Hz5 MHz

5

2009/1/15*X

X2009/1/15* ABTX

2009/1/15*X

1-100 nm X 0.8 8

()SiO2 X

2009/1/15*q-2 q-2 q-1 q-4 Porod (S/V)q-4

X

Imaging plate (IP), CsI(Na)+CCD

CCD : 103-4 IP : 105-6

*2009/1/15

2009/1/15*photon

2009/1/15*Camera length 0.63.5mbeamtargetBL45-XU1012 photons/s( : 1 mm 0.8 mm)KEK-PF1000

2009/1/15*X0.9 (13.8 keV)106 events105events104events

2009/1/15*() = () - ()Counting rate

2009/1/15*Apo-Ferritin8 keV (1.5) 470 s () Imaging plate

2009/1/15*

2009/1/15*ASD : m-PICchargedigital100 MHz

2009/1/15*500 mm8 keV (1.5 )32 mm

= 93.6 mm

=157.9 mm ()

2009/1/15*8 keV (1.5 )

X

Global counting rate 5

: Imaging plate

: 6

s = 93.6 mm imaging plate (pixel size 100 mm) 2009/1/15*X

2009/1/15*JRR-3 NOP

m-PIC2009/1/15*3Hetrack length [cm]protontritonGEANT4 simulation1-atm Ar-C2H6-3He (>99:10:

2009/1/15*J-PARC

20089JRR-3 NOP7.6

Ar 80%, C2H6 9%, 3He 11%10cm10cm0.4cm

gas gain < 1000

proton (765 keV)+triton (191 keV)

2009/1/15*8Cdr = 4 mmError functionfit1.0 mm

m-PIC 1 mmBragg peak

5cm, (Ar-C2H6) 70%, 3He 30%, 2atm30%dE/dx2009/1/15*

2009/1/15* m-PIC

X ( : COMPASS GEM50)

106

1 s = 93.6 mm

1 mm

Future work

2 MHz10 MHz

X24%@8keV 2-3 30% 5 cm, 2 atm

(10 cm10 cm 30 cm30 cm)2009/1/15*

2009/1/15*backup

2009/1/15*X = r(r)

2009/1/15*CCDCsI(Na)Imaging plateCCDBaF(Br, I):E2+XPMTX

PILATUS (CMOS)X 106 > 106 dead time 2 ms, framing rate 10-100 Hz2009/1/15*172 mm

MWPC high counting rate

RAPID, 800 mm

MSGC(200 mm), m-PIC(400 mm) *

(2) < ( = )

photon

ADC

MSGC: 200 mm 90 mm RAPID: 800 mm 375 mm2009/1/15*

2009/1/15*Micro Strip Gas Chamber (MSGC) : 6

*SetupPrinted circuitboard

X100 mm

1 atm2009/1/1530 cm

2009/1/15*ASD : m-PICchargedigital: anode, cathodedigital10 ns (= 1 clock)(X, Y, T)DAQ

2009/1/15*0.9 (13.8 keV)10 cmCCD < 1% < 1

2009/1/15*Counting Rate (local)X (Ka 17.4 keV)

10 Mcps/mm2

PILATUS() : 15 MHz/mm50 MHz/mm

RAPID () : 1 MHz/mm

Counting Rate (global)2009/1/15*20Hz5MHz(5)5MHz Saturationcounting rate1.038Error0.7%Spring-8 BL45XUX13.8 keV

2009/1/15*10 cm10 cmX8 keV (110 nm, 5 mg / ml)X: 8 keV10 cm

2009/1/15*Accidental coincidence2 MHz120 kHz1 M photons /sAccidental coincidenceAu nano particle0.9 (13.8 keV)

2009/1/15*Counting losstime walk1 clock (= 10 ns)anodecathodecathodeanode

*UniformityMode-Ianodecathodecoincidence1 photon 0-2 hitsMode-IIphotongainApo-Ferritin 8 keV (1.5)

2009/1/15*Pile-up cutMode-II()SiO2 8 keV (1.5 )200 nsphoton

q-4

2009/1/15*Dynamic rangeMode-I (coincidence)SiO2 8 keV (1.5) () 150 s

2009/1/15* (mode-III)ASD : m-PICchargedigital100 MHz

2009/1/15*

2009/1/15*ttanodescathodes

2009/1/15*aginggainX CO2signal-to-noise ratiothreshold

2009/1/15*0 1.95 3.90 6.50 7 sec

Spring-8KEK Photon Factory 0.7

2009/1/15*Small-angle neutron scattering (SANS)X1 nm 1 mm

X

Z

:

Coherentcross sectionX

2009/1/15*LiOMnLiOT. Kamiyama, et al.N. Niimura, et al.

(1)* J-PARChigh counting rate Time-of-flight (TOF)

2009/1/15*

1 msTOF ( 1 ms)

(107)

< 1 mm (2-3 mm) 2 (2)

-PIC10ns10Mcps105events105/107=10msec()

X-ray Crystal Structure Analysis with -PIC

2009/1/15*1010cm2mPICX-ray generator at laboratory Dec. 2003 @ Tokyo-TechTakeda et al.J. Synchrotron Rad. (2005)12, 820-825Continuous Rotation Photograph Method

-PIC(30cm30cm)2009/1/15*30cm-PIC-PIC(GEM)30cmASD-PIC24cmFirst image of 30cm -PICX13.8 keV

20010cmPIC2degreeNumber of event2009/1/15*

2009/1/15**0 sec1.95 sec3.90 sec6.50 secThe intensity I(2, t) is expressed as I = xId (2)+ (1-x)Ih (2),where Id (2), Ih (2) is the intensity of the dehydrate, the hydrate, respectively, including a background4.3104 events / 0.65 secTime resolution will be expected to about 4 msec with a count rate of 10MHz

2009/1/15*Accidental coincidenceMode-II()SiO2 8 keV (1.5 )1 M photons /sAccidental coincidence

2009/1/15*Contrast Match Method

2009/1/15*F12H20Bragg peak q=1.02 / nm

m-PIC ZnS/6LiF

m-PICBragg peak

2009/1/15*micro-TPC (m-PIC)MeV1photon

2009/1/15*(40%)137Cs22Na133Ba137Cs (662 keV)22Na (551 keV)133Ba (356 keV)

TPC-modeII 2009/1/15*AnodecathodecoincidenceHit2

2009/1/15* (mode-III)100 MHz

2009/1/15*tt()()anodescathodes

*******