1

Yannis Tsividis, Operation and Modeling of the MOS Transistor Second Edition,McGraw-Hill, New York, 1999.

2

BSIM

3

CLM: Channel Length Modulation

P

n+n+

pl

L

'

DSDS VV 'DSV

mE1E

4

1

2

1

'

'

1

2

2

0

0

:(

A

sD

D

DDSDSD

A

sp

p

DSDS

qN

VVqN

l

l

VV

x

x

x

5

Ds

DDSDSD

A

p

p

p

DSDS

p

p

DS

p

DSDS

pDS

qB

VVN

Bl

l

L

lII

Ll

Ll

I

lL

LII

lI

21

1

'1

'

''

2

1

1

1

6

122

''

'1''

'

1

'

'

1'

'1

'

2,

1

2

111

2

2

1'

BBNLBV

V

VVVI

VVB

NLI

L

lII

I

VV

N

B

VVVVN

BVl

VVN

BVl

VVl

DAA

A

ADSDSDS

DSDS

DA

DS

p

DSDS

DS

D

DSDS

A

DSDSVV

DSDSDA

DSp

DDSDSD

A

DSp

DSDSp

DSDS

7

12

1

2

2

1

1

2'

2

'

'''

A

TGSADS

DSDSDS

DSDSDSDSTGSoxDS

DSDSTGSoxDS

DSDSDSADSDSDSDS

DSADSDSDSDS

DS

V

VVVV

VdVdI

VVVVVVCL

WI

VVVVCL

WI

VVVVVVII

VVVVII

I

'DSDS VV

8

ADSDSDSDS VVVII '' 1

''' 1 DSADSDSDSDS VVVVII

12

1A

TGSADS

V

VVVV

'

DSV

'

DSVDSV

AV

AV 0

0

0

DSI

DSI

DSI

DSV

DSV

DSV'

DSV

AV

9

E

E

DSDSap

paDSDSm

jm

joxjox

ox

sa

a

DSDSm

maDSDSap

pp

V

V

VVll

llVV

dx

dtdtll

VV

lVVll

ll

'

'

1

1

2

12

2'

1

'

*

1ln

const)(

3,

ln

2

*Y. A. Elmansy and A. R. Boothroyd, A Simple two-dimensional model for IGFET operation in the saturation region,

IEEE Transaction on Electron Devices, vol. ED-24, pp.254-262, 1977.

10

IDS vs.VGS

GSV0

DSIfixed:

smallvery fixed,:

W

VDS

11

TL

SB

B

BTLSBFBT

TLTT

T

B

SB

B

BFBT

T

V

VQ

QVVVV

VVV

V

Q

VQ

QVV

V

0'

'

100

'

1

0'

'

10

1 ,

SBV0

)( SBTL VV

)( SBT VV

)( SBT VV

12

12

11''

j

Bj

BBd

d

L

dQQ

SB

B

BFBT V

Q

QVV

0'

'

10

L

n+ dJ

P

n+

dB

dJ

dB

dB

BQ

BQ

'

'

B

B

B

B

Q

Q

Q

Q

13

11

''

''

''

''

''

0

''

1

2

1

12

12

11

2

:

L

dQQ

dd

L

dQQ

QQdd

d

d

L

dQQ

QQ

qNVd

dQQ

BBB

jB

BBB

BBjB

j

Bj

BB

BB

A

sSBB

BBB

14

SBox

ox

sTL

TL

SBSBFBT

TBB

VL

tV

V

VL

VVV

VQQ

01

01

00

''

1

2

1

LVTL 1

15

DSSBox

ox

sTL

SB

DSSBSBFBT

TLTDS

SB

DSSB

SBDSDBDBSBBDBS

BDBS

BDBSBB

BB

VVL

tV

V

VV

LVVV

VVV

V

VV

VVVVVdd

dd

dd

LQQ

QQ

201

0

20

100

2

0

20

00

11

''

''

2

1

25.0

22

2

11

16

BTL

B

ox

Boxs

bi

L

DSbiTL

TL

dLV

d

dt

eVV

V

1

length sticCharacteri

3

3

3

0

*

*Z-H Liu, et. Al., Threshold voltage model for deep-submicrometer MOSFETs, IEEE Transaction on Electron Devices,

Vol. 40, pp.86-95, 1993.

17

TV

0 L

TV

/

P

N+

N+

N+

P

N+

18

IDS vs.VGS

GSV0

DSIlong fixed,:

smallvery fixed,:

L

VDS

19

LOCOS

SB

B

BTWSBFBT

TWT

TWTT

TBB

B

SB

B

BFBT

T

VQ

QVVVV

VV

VVV

VQQ

Q

VQ

QVV

V

0'

'

100

''

1

'

1

0'

'

10

1 ,

1

TWV

)( SBT VV

)( SBT VV

SBV0

20

BQ

BQ

Bd

W

Bd

'

'

B

B

B

B

Q

Q

Q

Q

21

LOCOS

SBox

ox

sSB

SBSBTW

TW

SBSBFBT

T

B

B

B

BB

VW

tV

W

VVW

V

V

VW

VVV

V

W

d

Q

Q

QQ

0404

004

0400

4

4'

'

1

''

1

2

2

21

1

21

LOCOS

'

0

2

2

ox

As

A

s

SBB

C

Nq

qN

Vd

22

TV

TV

0 W

LOCOS

STI

/

23

STI

12

2

STI

'

'

1

1

'

10

'0

Fox

ox

B

B

B

ox

BFBT

T

F

Fox

BFBT

T

CWLC

WLC

Q

Q

Q

WLC

QVV

V

C

CWLC

QVV

V

24

STI

FW

WVVV

V

t

ttF

FW

W

Q

Q

Ct

t

tLC

C

SBFBT

T

ox

Foxox

B

B

FFox

ox

FoxoxF

F

00

1

2ln

4

2ln

2

* L. A. Akers, et. al., Characterization of the inverse-narrow-width effect,

IEEE Transaction on Electron Devices, vol. ED-34, pp. 2476-2484, 1987.

25

N+N+

P

N+N+

P

Log IDS

VGS

VDS3VDS2VDS1

VDS3 VDS2

VDS1

26

cDS

DSN

DSNLV

II

1

,

,

max

d

c

v

xdcx v

maxddcxvv

0

xGSd Vv )(

maxdv

dv

xc

27

DBCBSBCB

CBI

CB

c

DSN

dIDSN

DSN

CBc

CB

CBc

CBcdd

CBx

cx

cx

dd

d

VVLxVVx

dx

dVQW

dx

dVI

xvQWI

I

dxdV

dxdV

dxdV

dxdVvxv

dxdV

vv

v

0

11

)(

1111

1)(

1

'

'

max

max

28

cDS

saturationvelocityincludingnotDSN

saturationvelocityincludingDSN

V

VCBIDSN

DSSBDB

V

VCBI

cDS

DSN

V

VCBI

c

SBDBDSN

LV

II

dVQL

WI

VVV

dVQLVL

WI

dVQWVV

LI

DB

SB

DB

SB

DB

SB

1

1

,

,

'

'

'

29

c

DSp

DSDSTGSox

DS

pDSDS

c

TGS

TGSDS

DSDSDSDS

DSDS

cDS

DSDSTGSox

DS

L

V

L

lL

VVVVCW

I

lLLVV

L

VV

VVV

VVdVdI

VVLV

VVVVC

L

WI

'

2'''

'

'

'

'

2'

1

2

12

1

2

0

,1

2

30

max

''

''

'

'

'

'''

''

1

dIDS

TGSoxI

TGSDS

p

cTGSox

cDS

DSTGSoxDS

DSDS

vQWI

VVCQ

x

VVI

Ll

VVWC

LV

VVVLWCI

IVL

31

IDS-VDS

DSI DSI

DSVDSV0 0

2

2

' TGSoxDS

VVC

L

WI

cTGSoxDS VVWCI

'

32

+

++

+

+

++

+

+

+

+

++

+

+

+

N+

/

P

ID

IDB

/

33

vs.

3010,31

exp'

'

ii

DSDS

iDSDSiDSDB

VK

VV

VVVKII

DBI

GSV0

DSV

34

LDD

N- N+N-

N+

P

35

p-sub

nn

n n

p-sub

36

1:

2

21:

11

1

2:,1:,:

1

1:,,,

1

'

0

''

'

2

B

CBAsBB

oxAs

bi

A

sA

jox

Q

VNqQQ

CNq

C

VqN

dVN

dtWL

37

/:1111

221

/:111

vs.log

2

:11

2

'

2'

2

SBF

DSGSDS

DSDSTGSoxDS

Vn

VVI

VVVVCL

WI

38

:111

1:1,1

/:111

32

CIdtdV

39

2

22

2

2

1

1:

11

11

/11

/11

40

41

42

n

subp

1R

2R

3R

43

MOS

DSV

DSV

G

B

D S

R R DSI

44

L

RWCVVV

VV

LWCI

I

VVVCL

WI

V

VRIVV

VVVVCL

WI

VV

RIVV

V

oxRDSTGS

TGSR

oxDS

DS

DSTGSoxDS

DS

DSDSTGS

DSDSTGSoxDS

DSDS

DSDSDS

DS

''

'

2

2'

2,

1

2

2

2

45

1,1

1

11

1

0

'

'

0

0

TGSRTGS

DSTGS

TGSR

ox

DSTGS

TGSR

ox

TGS

DS

SBB

TGS

eff

eff

VVVV

VVVVV

LWC

VVVVV

LWC

VVI

VVV

46

15

)cmC(V/500

:

cm)C(1032

11,

322-

2

000

'32

'

2

0

319

1

31

''

1

B

V

dQ

QB

V

ddtt

BQQBddtt

ssT

ssm

s

B

Bs

T

pm

s

oxoxox

IBmm

s

oxoxox

47

L

W

VDSDIBL

48

SBTWSBDSTLSBTSBDST VWVVVLVVVVVWLV ,,,,,,

cDSSBBSBDSTGS

DSDSSBDSTGSox

DS

LVVVVWLVV

VVVVWLVVL

WC

I

1,,,1

2,,, 2'

cDS

p

SBBSBDSTGS

DSDSSBDSTGSox

DS

LVL

lVVVWLVV

VVVVWLVVL

WC

I'

2'''

1,,,1

2,,,

'

DSDS VV

'

DSDS VV

49

BSIM

50

0),(

depX

s

dx

yxdV

L

depX

)(yEs

dsbi VV biV

depX

y

L0 y

x Gaussian box

51

Gaussian boxGauss

yXy

EyX

y

yxEyyxE

XyxEyyxE

dep

y

dep

yy

depyy

),(),(

),(),(

oxsFBgsxsi

depx

si

oxsFBgs

xdepx

CyVVVyE

yXE

yCyVVV

yyEyXE

)(),0(

0),(

)(),0(),(

V siS

dvdS

nE

Gauss

52

Gaussian boxGauss

yX

qNy

CyVVVyX

y

Edep

si

peak

si

oxsFBgs

dep

y

)(

depdepsyy XXyEyEyxEy ),(),0(),(,0

deppeakoxsFBgs

sdep

si XqNCyVVVdy

ydEX )(

)(

oxoxoxss TCdyydVyE ,)()(

deppeak

ox

sFBgs

oxsdep

si XqNT

yVVV

dy

yVdX

)()(2

2

depX

53

(1-1)

bidssbis VVLVVV )( ,)0(

deppeak

ox

sFBgs

oxsdep

si XqNT

yVVV

dy

yVdX

)()(2

2

(1-1)

FBgsoxdepsi

ox

si

peak

oxdepsi

ox

ss

VVTX

qNB

TXA

ByAVdy

yVd

,

)()(

2

2

(1-2)

54

/

(1-3)

yAyA

s

ss

yAyA

s

y

s

ss

eyCeyCyV

yCC

ByAVdy

yVd

CCeCeCyV

AA

eyV

yAVdy

yVd

)()()(

,

)()(

:,)(

0

)()31(

0)()(

)21(

21

21

2

2

2121

2

2

2

(1-4)

(1-5)

(1-6)

(1-7)

55

/

BeACeAC

AeCeAC

AeCeACdy

yVd

eACeAC

eACeACdy

ydV

yAyA

yAyA

yAyAs

yAyA

yAyAs

'

2

'

1

2

'

2

1

'

12

2

'

2

'

1

21

)61()101()71(

)(

)81(2)71(

0

)(

1)71(

(1-8)

(1-9)

(1-10)

(1-11)

56

/

yAyA

s

yA

yA

yA

yA

eDeDA

ByV

DDDeA

ByC

DeA

ByC

eA

BC

eA

BC

21

2122

11

'

2

'

1

)(

)71()151()141(

:,2

)(

2)(

)131()121(2

2

)111()91(

(1-12)

(1-13)

(1-14)

(1-15)

(1-16)

57

/

LA

bibids

LA

bibids

bids

LALA

bi

bidssbis

eVA

BVV

A

B

LAD

eVA

BVV

A

B

LAD

DD

VVA

BeDeD

VA

BDD

VVLVVV

sinh2

1

sinh2

1

)141(

)( ,)0(

2

1

21

21

21

(1-17)

(1-18)

(1-19)

(1-20)

58

/

t

sLsthgsss

ox

oxdeppeak

FBgs

t

t

sLbi

t

t

sLdsbisL

bibidss

s

lA

VVVTXqN

VVA

B

l

L

l

yL

VV

l

L

l

y

VVVV

VA

B

LA

yLAVV

A

B

LA

yA

A

ByV

yVDD

1

sinh

sinh

sinh

sinh

sinh

sinh

sinh

sinh)(

)()161(

0

21

0thV

59

s

ox

oxdeppeak

FBth

sthgssL

t

tsLbi

t

tsLdsbisLs

TXqNVV

VVV

lL

lyLVV

lL

lyVVVVyV

0

0

sinh

sinh

sinh

sinh)(

60

sLbids VVV

2)( 00min LyyVV ss

ththt

dssbithth VV

lL

VVVLV

00

22cosh2

2)(

t

tdssLbisLs

lL

lLVVVVV

sinh

2sinh2min

thgsss VVV at ,min

61

Llt

ttttt

t

tt

lLlLlLlL

lL

lL

lLlL

t

eeeee

e

eelL

22121

2

1

22cosh2

1

222

2

2

22

tt lLlLdssbith eeVVLV 22)( 2