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Memoori Webinar – LED’s Lighting the Way towards smart CitiesSemiconductor approach to integrated lighting solutionsMICHAEL LEGOFF (CEO)
DR KEITH STRICKLAND (C TO)
11 TH MAY 2016
2COMPANY CONFIDENTIAL
Plessey is an innovative technology design and manufacturing company
• Globally recognised British brand
• Innovation and technology centres in Swindon and Plymouth
• Significant manufacturing facilities in Plymouth
• Strong management team and experienced advisory board
World class GaN-on-Silicon light emitting diode (“LED”) manufacturing technology for the growing solid state lighting (“SSL”) market
• In March 2013 Plessey launched world’s first available GaN on 6-inch silicon LED products
• GaN on Silicon USPs in conjunction with silicon / IC industry advanced packaging
• Differentiated SSL solutions – Integrated Inteligent (i2LED) approach
• Provides integration solution for smart LED lighting
• Cost advantage over traditional LED manufacturing technologies
• Demonstrating LED performance at >60% WPE
Executive Summary
3COMPANY CONFIDENTIAL
Global Presence
HQ R&D centre Sales office
Plymouth
Swindon
Philadelphia
Florianópolis
ShenzhenDelhi
Shanghai
Munich
Milan
4COMPANY CONFIDENTIAL
2016 AND ONWARDS
Acquisition of CamGaN provides access
to ground-breaking LED technology
Market-leading sensor technology
developed alongside legacy product sales
Plessey doubles efficacy within the year, from 32 to 64lm/W
Plessey produces world’s first commercial LEDs manufactured on 6” (150mm) diameter silicon substrates
Transfer of experimental recipe onto production tool completed
Plessey re-launched from the Swindon
and Plymouth facilities
Mainstream GaN-on-Si production
Expanded product range – Power LEDs
Efficacy at 130lm/W, and higher in lab
2013201220112010 2014
Advanced packaging solutions
i2LED technology
14 reactors installation plans
Plessey: An innovative technology company
2015
5COMPANY CONFIDENTIAL
Si
HEAT
GaN on Silicon – Inherent Unique Selling Points
• Better Thermal Performance that provides 3 degrees of leverage• Lower LED operating temp Higher reliability
• Simpler heat sink Lower system cost
• Higher drive current cost down through more lumens per die area
• Improved Hot-Cold factor
• Focussed light emitting surface (smaller etendue)• Surface emitter V.S. volume emitter: How “spread out” the light is
• Simpler and lower cost optical system
• Better lm/W maintenance when scaling up die size
• Better uniformity• Better process control for target wavelength
• Higher wavelength binning yield Lower cost for LEDs with tight
binning requests
• Sharper wavelength peak for big die
• Better colour control for a high power LED
Si 149 W/m·K
Sapphire 27 W/m·K
LIGHT
SiLight absorption → Efficiency loss~20% efficiency drop ~2% efficiency drop
Our GaN-on-Si
Typical GaN-on-Sapphire
Wavelength Std Dev
Consistent PL wavelength standard deviation of < 3nm, typical 2.5nm.Wafer bow is within a tight range of 0 um 10um
Si
Si
Si
mirror
Simple mesa Vertical Thin Film
6COMPANY CONFIDENTIAL
n-up VLED Chip on Si
Chip Scale Packaging
Wafer Level Packaging
GEN 1: Vertical LED GEN 2: Segmentation/ Chip Scale Optics and
Advanced Packaging
GEN 3: Wafer Scale Packaging &TSV
Intelligent LED Monolithic
Si-Integration
GEN 4: Active Sub-mount
• Double bottom contacts• Active bonded wafer
• Addressable arrays• Zener Diode• Low Power regulation• Photodiodes• Mount on Silicon
• n-Up VLED with wire bond• Two bottom contact• Wafer level phosphor
dispense• TSV-Through Silicon Vias• Wafer scale LED to sub-
mountHV Segmentation
• VHA process• Segmented LED on chip
On-Chip Diagnostics & Controls for• Temperature• Intensity• Spectrum• ESD Connectivity & CommunicationsMicro displays
Hi-Voltage (>48V) DC / AC LEDs for system level benefits in• Retrofits (space constraint)• Driver efficiency• AutomotiveHigh Density LED Arrays for• Automotive Headlamps• Intelligent LED Displays• Power Projection Sources
• Cost Reduction by Scaling to 8” Si• Large Area LEDs• Surface Emission• Superior Thermal Performance• Competitive performance
• No Wire Bonds (Hi Reliability)• Flat Top for Direct Optical Attach• Optimized Active Area Usage• No Far Field Wire Bond Shadow• Low Contact Resistance, • Good thermal resistance
Technology Roadmap
Chip Scale Optics and Reflectors
• White light beam shaping• Reduced secondary optics
• Size and format• System cost advantages• Greater design freedom• Spots• Hi Bays• Stadiums
• On Chip white light • Collimation potential down
to 10 degrees
Thank You