Terahertz Plasma Oscillations in semiconductor...

Terahertz Plasma Oscillations in semiconductor

Nanostructures: Basic Physic and Applications

W. Knap, M.Dyakonov, D.Coquilat, F.Teppe, N.Dyakonova

Université Montpellier 2, France and UNIPRESS Warsaw Poland

J.Lusakowski, M.Sakowicz,

University of Warsaw and ITE Poland

S.Rumyantsev & M.Shur

RPI – Troy NY USA

M.Vitello, A. Tredigucci

SNS – Pise Italy

Plasma waves sound Waves &Transistors

Detection & Imaging

Current research and unresolved problems

Outline Plasma waves &Transistors

Plasma waves and dimensionality

Fiel Effect Transistors

Plasma waves in the transistors

Well establised results and apllications

Regimes of detection

Resonant detection

Non-resonant detection

Emission

Temperature

Resonat dreams with graphene

Circular polarisation

THz communication

3D - +

Standing Longitudinal Waves in the tube

Different modes

Musical wind instrument Analogy ( Air and Plasma Waves Comparison)

Parameter Sound 2D plasma

Dimension 0.1-1 m 0.1-1 µm

Speed of waves (s) 300 m/s 106 m/s

Frequency (s/L) 0.3kHz-3kHz 1THz-10THz

Appl. Phys. Lett. 67, 1137 (1995) M. Dyakonov et al.

BETTER THEN ACOUSTIC INSTRUMENTS …….Voltage tunable

Plasma waves velocity in 2DEG gated gas

« Voltage tuneability»

gated 2DEG

Frequency of the plasma oscillations

« Voltage tuneability»

Lk 4__,2

24.006.0

µmLTHzTHzf p 0.46.0

Basic mode n=1, ..3,5,7

Dreams of plasma waves resonances

(high frequency and short transistors)

Short gate: L << sτ

1 Plasma waves are weakly

damped

Experimental observations of plasma waves in 2DEG

P. J. Burke et al. APL, 76 , 745 (2000)

GaAs/AlGaAs, gated 2DEG

L=360µm KTVsmµ 1~_/330 2

S. J. Allen, D. C. Tsui, and R. A. Logan, PRL, 38, 980 (1977)

D. C. Tsui, E. Gornik, and R. A. Logan, Sol. St. Comm, 35, 875 (1980)

Can Plasma Waves Exist in main Semiconductor FETs???

For GaAs ( 1 THz) n = 21012 cm-2 & L = 600nm.

For GaN (1 THz) n = 2 1013 cm-2 & L =1000nm

For Si (1 THz) n = 2 1012 cm-2 & L =300nm

!!!!!!!!!!!!!!!NANOTECHNOLOGY!!!!!!!!!!!!!!!

_*/~??_1__ LmnfTHzfrequencyreaching s

2.1~ / 6000~

2.1~ / 1500~

4.0~ / 500~

GaAsGaAs

GaNGaN

???1__300__1__ THzforKatreaching

Conclusions on plasma

• Plasma oscillations in gated 2DEG have acoustic like

behaviour

• They were observed in big devices in cryogenic

temperatures

• Plasma resonances can reach THz range for sub-

micron devices

Field Effect Transistors

Carrier density regulated by the electric field of the gate

conductive layer

semiconductor

isolator S D

MOSFET

2DEG CREATION 2DEG DEPLETION

Vg = 0 -> n=0

Barrier Channel

Vg = 0 -> n≠0

Transfer Characteristics

-0.5 0.0 0.5 1.0 1.5

MOSFET

= 0.1 V

Gate Voltage, Ug (V)

-1.5 -1.0 -0.5 0.0

Gate Voltage, Ug (V)

= 1 mV

2DEG CREATION 2DEG DEPLETION

Threshold Voltage, VTH -> n = 0

THg VVCne

ETH Zurich

100 nm gate AlGaN/GaN on silicon

HEMT with a 1 µm source-drain

separation

APL 80, 246, (2002)

Cross section of a MOSFET

(a) Transmission electron micrograph

(b) Phase image obtained by

electron holography

MOSFET HEMT

Plasma waves excitation by THz radiation

THz radiation couples to the transistor by antennas – it can

be represented as AC source between two electrodes

Regimes of plasma waves (high frequency)

Short gate: L << sτ Long gate: L >> sτ

sl Characteristic damping length:

1 Plasma waves are weakly damped

Overdamped oscillations

(low frequency/mobility ,300K )

// geff µUsl

“x” distance normalized by “ damping length”

Transistor basic ideas

• Two main families of transistors –of FETs

• Basic FET Characteristics – transfer

• Plasma excitations can have a form of travelling

waves or overdamped/dacaying oscillations (300K)

Resonant detection

Emission

Temperature

THz communication

Resonant detection

Emission

Temperature

THz communication

Rectification of THz radiation in FETs

• Vgs: Source-Gate bias

• Ua: irradiation induced

ac voltage

• ΔU: dc photoresponse Vgs

FET , cw

!!Nonlinearity – THz modulates simultaneously

!!carrier density and drift velocity!!

Experimental Setup

Devices

Gate Source Drain

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y.M. Meziani

C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. Maude, S. Rumyantsev, M.S. Shur Plasma wave detection of terahertz radiation by

silicon field effects transistors: responsivity and noise equivalent power, accepted to APL

0.7THz /2=214m

Diffraction

limited spot:

214X214m

I ds (

sponse D

Gate Voltage Vgs (V)

Sakowicz et al.

JAP, 2011

1)Experimental proofs of plasma waves existence

2)Can we make a resonators and see resonant

votage tunable THz detection ??

3) Ovedamped Plasma and THz imaging @ 300K

Regimes of plasma waves (high frequency)

Long gate: L >> sτ

sl Characteristic damping length:

1 Plasma waves are weakly damped

2DEG in Magnetic Field

http://www.warwick.ac.uk/~phsbm/2deg.htm

CYCLOTRON ORBIT

ENERGY QUANTIZATION

cnEE 210

Cyclotron Resonance

0 1 2 3 4 5 6 7 8 9 10 110

Magnetic Field, B (T)

Schubnikov – de Haas Oscillations

0 2 4 6 8 10 12

Ug = -2V

Ug = -1V

Magnetic Field (T)

Ug = 0V

increases

0 2 4 6 8 10 12 14

- Fig. 2-

Magnetic Field (T)

0 1 2 3

D = 3 K

(Rxx-R

Magnetic Field (T)

Frassinet et al. Appl. Phys. Lett. 77,2551(2000)

Quantum Hall Effect and SdH Studies

22 )(skc

When ωc > ω k is imaginary and

plasma waves can not propagete

Plasma waves and Cyclotron resonace

THz rectification by In GaAs FET in magnetic fields

0.0 0.5 1.0 1.5

Vg = 0 V experiment

0.0 0.5 1.0 1.5-1.0

Vg = - 0.1 V experiment

0.0 0.5 1.0 1.5

2Vg = 0.1 V

B / BC

0.0 0.5 1.0 1.5-8

Vg = - 0.125 V

B / BC

THz rectification by In GaAs FET in magnetic fields

experiment and theory

Exp S. Boubanga-Tombet et al.

APL 2009

0,0 0,5 1,0 1,5

Vg = 0.1 V experiment

theory

N = 5.25

0,0 0,5 1,0 1,5-1

Vg = - 0.125 V

experiment

theory

N = 2.3

Theory M.Lifshits and M.I.

Dyakonov

PRB –Rapid Com 2009

Dreams of plasma waves resonances

(high frequency and short transistors)

Short gate: L << sτ

1 Plasma waves are weakly

damped

ac voltage

FET , cw

First -Resonant Detection 0.6THz ~1 Experiment ,250nm GaAs FET (Appl Phys Lett 2001)

The gate voltage – tunes carrier density – plasma frequency …to resonance

Resonant and “voltage-tunable” terahertz detection

in InGaAs/InP nanometer transistors

A. El Fatimy et al, APL 89, 131926, 2006

The calculated plasmon frequency as a function of the gate voltage for

Shown by the solid line SQRT dependece .

The error bars correspond to the linewidth of the measured plasmon

resonance peaks.

Vg (V)

-0,4 -0,3 -0,2 -0,1 0,0

800,0µ

f=1,8 THz

f=3,1 THz

f=2,5 THz

T= 10KInGaAs

Lg = 50 nm

Gate voltage Vg,V

Resonant Detector & Quality factor InGaAs

Line width : ~ 3 ???? µ = 36 000 cm2/V.s ?? ~ 13??

-0,4 -0,3 -0,2 -0,1 0,01T

Gate voltage Vg,V

A. El Fatimy et al. APL, 89, 131926 ,(2006)

Resonances are wider than expected…???

Discussion on plasma modes Broadening

• W/L ~ 100

• roughness on the gate bounderies

M.I. Dyakonov Semiconductors, 2008, Vol. 42, No. 8

Dyakonov-Shur theory

geometry

Experimental geometry

Only longitudinal

All modes are permitted

Top view Top view

Additional broadening mechanism

x M. Dyakonov and M. Shur, IEEE

Vol. 43, No. 3, (1996)

Samples - Multi-Channel InGaAs

I-V Characteristics at 20 K

L = 400 nm

W = 200 nm

Wgr = 300 nm

S. Boubanga-Tombet et al. APL, 92, 212101, (2008)

A. Shepetov et al . APL, 92, 242105, (2008)

-450 -400 0 20 40 60 80 100

= 100 mV

= 50 mV

= 10 mV

= 0 mV

Detection governed by dc current in Multi-Channel FET

Dc current leads to a strong shrinking of the line : From 58 GHz at

Vds = 0 V to 26 GHz at Vds = 100 mV

Incoming

frequency = 0.54 THz

T = 10 K

S. Boubanga-Tombet et al. APL, 92, 212101, (2008)

µ = 11 m2/V.s

DC current strongly reduce plasma wave damping

300K - Overdamped plasma oscillations

/sl Characteristic length:

ac voltage

FET , cw

0.6 THz imaging with InGaAs HEMT – 300K

25 mm25 mm

0.6 THz imaging - collaboration with University of Frankfurt

A. Lisauskas, W. von Spiegel, S. Boubanga, A. El Fatimy, D. Coquillat, F. Teppe,

N. Dyakonova, W. Knap, and H. G. Roskos, Electr. Lett. 44, 408 (2008).

Imaging at 1.6 THz with a single FET

Object under test

GaAs nanotransistor

molecular THz laser

2 4 6 8 10 12 14

Results from Vilnius ( collaboration with Montpellier) (2008).

I ds (

sponse D

Detection of terahertz radiation by Si field effects transistors 300K

0.0 0.2 0.4 0.6 0.80

0 100 200 3000.0

Lg=300nm

Gate voltage Vg, V

Gate length Lg, nm

ity, arb

f=0.7THz

AC voltage U1 and DC signal U2

Dependence of the ac voltage U1/Ua at ωt =2πn

and of the dc photoinduced voltage U2/ΔU

on the distance from the source x for a long gate

THz detection & Signal to noise ratio in Si-MOSFETs

Appl Phys. Letters 2004 & 2006

50 60 70 80 9010

noise= 4kTR

Signal

Spectr

al density, V

Frequency f, Hz

NEP=10pW/Hz0.5

Lg=120nm. Vg=0.3V

F=700GHZ

300K CMOS THz detectors -Fast, sensitive & INTEGRABLE in MATRIXES!!!

-For 300K price effective focal plane arrays -Fast enough for THz communication

Sampling

frequency (MAX)

NEP (pW/Hz0.5)

Golay Cell ~20Hz 100

Pyroelectric <10KHz 1000

Schottky Diodes <20GHz 10

Microbolometers <1MHz 10

Si transistors 30GHz or higher 10

THz Imaging with

Si-MOSFET Detectors

0.13µm CMOS

"Broadband terahertz imaging with highly sensitive

silicon CMOS detectors,"

F.Schuster et al

Optics Express, vol. 19, pp. 7827-7832, (2011)

Laser Focus World, vol. 47(7), pp. 37–41, (2011)

20 40 60

X Axis (mm)

Imaging with MOSFET –0.3THz

“!!!!Cutting Edge Technology!!!”

0 10 20 30 40 50 60 700

X Axis (mm)

0.02100

0.04200

0.06300

0.08400

0.1050

0.1260

0.1470

0.1680

0.1890

0.2100

Imagerie THz avec un Transistor MOSFET

Radiation : 0.3 THz (= 1 mm),

Puissance 2 mW

10 ms/point Scan-Time: qq min

Measurement Imaging at 300GHz, tree leaves

225x600 scanned points

PANASONIC GaN detector 2011

150 µm

200 µ

Other groups – Competitors/Collaborators

in Si CMOS Imaging

• Goethe University of Frankfurt group of

Prof.Roskos

• Dallas University /Texas Inst. USA

• Wuppertal University

Prof. Pfeifer

First 1000 pixel Si CMOS

camera

( February 2012)

(German –French project)

End of The Second Part

Magnetic field and plasma

Resonant detection

Emission

Temperature

THz communication

Magnetic field and plasma

Resonant detection

Emission

Temperature

THz communication

1) Can we have THz detection with Graphene??

2) Can we enhance nonresonat THz detection while

lowering temperature

3) THz polarization measurements with HEMTS

4) Can FETs be THz emitters???

Frequency of the plasma oscillations !!!300K!!! Vg

24.006.0

THzTHzf p 0.46.0

!!Only When Plasma waves are weakly damped!

THz detection by Graphene transistors

L. Vicarelli,1 M.S. Vitiello,1 D. Coquillat,2 A.C. Ferrari,3 W. Knap,2

M. Polini,1 V. Pellegrini,1 and A. Tredicucci1

Common project : Pise1, Montpellier2, Cambridge3

-1 0 1 2 3

Monolayer

Graphene

Gate Voltage (V)

-1 0 1 2 31x10

2x10-5

3x10-5

4x10-5

5x10-5

6x10-5

Monolayer

Graphene

Gate Voltage (V)

-1 0 1 2 3-1m

-500µ

response X

Gate Voltage (V)

Monolayer

Graphene

Electrons

MOTIVATION!!!

??300K RESONANCES

FOR SELECTIVE GATE TUNABLE

DETECTION AND EMISSION ???

NATURE MATERIALS DEC 2012

I ds (

sponse D

Sakowicz et al.

JAP, 2011

1.0 1.2 1.4 1.6 1.8 2.00

T = 5 K

T = 10 K

T = 30 K

T = 50 K

T = 75 K

T = 100 K

T = 125 K

T = 175 K

T = 275 K

response (

Vg (V)

T = 5 K

T = 10 K

T = 30 K

T = 50 K

T = 75 K

T = 100 K

T = 125 K

T = 175 K

T = 275 K

) (Klimenko et al

JAP 2012)

signalTHz

10 1001

max, m

T, K (Klimenko et al JAP 2012)

bandimpurityconstU

KabovediffusionekTU

UUandUU

____???_*

30_____/*

*/1____*/exp_

Physical limitations – U*

subthreshold

Klimenko et al Journal of Applied Phys 2012

J. Appl. Phys. 111 124504 (2012)

theory M.Dyakonov J. Appl. Phys.

(2013)

Linear polarization detection

Source drain voltage from FET at 800GHz

Shallow water analogy for a ballistic field effect transistor: New

mechanism of plasma wave generation by DC current

M. Dyakonov and M. S. Shur, Phys. Rev. Lett. 71, 2465 (1993)

Plasma Waves FET as THz Emitter

Introduction

Instability and THz generation

This mechanism of plasma wave generation is similar to sound generation in a whistle and wind musical instruments:

Ingredients:

a) Resonator

b) Asymmetric boundary conditions

Instability - Threshold

Plasma waves instability &Emission-

Threshold like - phenomena – laser analogy

exp( )

s v s v

Ls s v

M. Dyakonov, M. Shur, Phys. Rev. Lett. 71, 2465, (1993)

1 0.5 0

Cryogenic THz Spectrometer

W. Knap et al.,

Rev. Scient. Instr. 63, 3293

(1992)

0 2 4 6 8 10 120

0 1 2 30.0

0.2 0.4 0.6 0.8

InGaAs-HEMT

(V)f (THz)

sity (

Detection Frequency (THz)

InSb-bulka)

APL-2004

Threshold behaviour in the magnetic field

0.0 0.2 0.4 0.6 0.810

N. Dyakonova et al. J. Appl. Phys. 97, 114313 (2005),

The shift of the threshold voltage - the magnetoresistance of the ungated

0 1 2 3 4 5 6 7 8 9 100,0

Lg= 50 ,60 ,80 ...100nm W = 20µ mE

f , T H z

Transistors of different gate length

• Vg dependence is not observed

• Spectra is broad and there is no strong dependence on L

Emission spectra

T = 4.2K

Deep/shallow water analogy -

GateSource Drain

3D gas 3D gasUngated2D gas

Gated 2D gas

Deep WaterWaves

Shallow WaterWaves

Discussion on plasma modes Broadening

• W/L ~ 100

• roughness on the gate bounderies

M.I. Dyakonov Semiconductors, 2008, Vol. 42, No. 8

Dyakonov-Shur theory

geometry

Experimental geometry

Only longitudinal

All modes are permitted

Top view Top view

Additional broadening mechanism

x M. Dyakonov and M. Shur, IEEE

Vol. 43, No. 3, (1996)

Shallow , deep and white water instabilities

Field Plate GaN transistor for THz emission

1,5 3,0 4,50,0

Vg=-4VNo

Frequency (THZ)

Fourier Transform analysis

GaN/alGaN 200nm transistor

T=300K Vd=8V

0 200 400 600 800 10004

Wavenumber, cm-1

0 1 2 3 4 5 6 7 80

-4 -3 -2 -1 01.6

Vgs, Volt

Vgs=0 V

Frequency, THz

0.75 THz

2.1 THz

Vgs=-3.5 V

Vds =4V (a)

THZ emission from GaN/AlGaN

-5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5

ncy, T

Ugs, V

Lg=250nm

Lg=150nm

2DEG at AlGaN/GaN

10 100

2x1012

3x1012

4x1012

5x1012

6x1012

sample A

sample B

sample C

all (c

Temperature (K)

105 GaN/AlGaN

Skierbiszewski et. al. Phys Stat Sol (b) 2004

Skierbiszewski et. al. Appl. Phys Lett. 2005

HIGH MOBILITY at 300K :

2500 cm2/Vs

World record!

Important for device

performance

UNIPRESS

THz Source Based on GaN

THZ Emission ( UNIPRESS – UM2)

L = 75 µm

Multi GaInAs HEMT

Emitters

1)Plasma and dimensionality (THz in gated 2DEG)

2)FET transistors and THz plasma oscilations(nano)

3)Experimental proofs of existence (f(B))

votage tunable THz detection ?? (Yes …broad &LT)

votage tunable THz emission ?? (Yes ….broad)

6)Ovedamped Plasma and THz 300K imaging with Si

MOSFETS (Leading current application)

7) Current and Future Research

( 300K Res plasma in Graphene for detectors

Polarization, GaN THz emitters )

Terahertz Plasma Oscillations in semiconductor...

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