Raith eLine E-Beam Writer - Purdue University

Raith eLine E-Beam Writer

Refer to the  page for information on materials compatible with this tool.Material and Process CompatibilityEquipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See   for more info.Problem Reporting Guide

Status UP

Issue Date and Description

Estimated Fix Date and Comment

Responding Staff

Raith eLine E-Beam Writer - Internal Resources

iLab Name Raith eLine E-Beam Writer

iLab Kiosk BRK Lithography Core

FIC Joerg Appenzeller

Owner Bill Rowe

Location BRK 1239

Max. Wafer 4"/100 mm

1 Overview1.1 General Description1.2 Specifications1.3 Technology Overview 

2 Sample Requirements and Preparation3 Standard Operating Procedure4 Questions & Troubleshooting5 Process Library6 References

Overview

General Description

The Raith e_LiNE is a 100eV to 30keV system using a Schottky TFE filament with a 20MHz pattern processor. It is ideal for nanotech research in carbon nanotubes and nanowires.

Specifications

Stage travel: 100 mm x 100 mm.Maximum substrate size: 100 mm x 100 mm.Minimum feature size: <20 nm.Minimum beam size: <2 nm.Writing current: 5 pA - 20 nA.

Technology Overview 

Sample Requirements and Preparation

Standard Operating Procedure

Questions & Troubleshooting

Process Library

ReferencesRaith eline instructions_ND