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© Copyright 2010 Power Integrations 2
Qspeed is now part of Power Integrations Acquisition completed December 31, 2010 Supply chain will be maintained All manufacturing processes and manufacturing sites will be maintained
Power Integrations Fully integrated solutions Large sales and distribution network
– Local support worldwide
Update on Qspeed
© Copyright 2010 Power Integrations 3
PI – End to End Power Supply Solutions Qspeed diodes compliment existing PI high efficiency solutions
CAPZeroSENZeroHiperPFS
HiperTFS
Qspeed
© Copyright 2010 Power Integrations 44
600V X-series
Reverse RecoveryCondition: 400V, 8Amps, 200A/us, 125C
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
0 20 40 60 80 100 120 140 160 180 200t(ns)
ID(A
)
LXA08T600
STTH806DTI
RHRP860
• X-Series are typically lower Switching loss than ST-Tandem and Much Lower loss than Ultrafast
• At lower frequencies, conduction loss is more important than switching loss
• X-Series has a lower Vf than Q&H-Series and could be a better choice at 50-80kHz
TO-220AC94nC36nC70A2.10V2.40V10A600VLXA10T600
FullPak94nC36nC70A2.10V2.40V10A600VLXA10FP600
FullPak82nC31nC60A2.10V2.35V8A600VLXA08FP600
D2Pak82nC31nC60A2.10V2.35V8A600VLXA08B600
D2Pak71nC30nC50A2.00V2.27V6A600VLXA06B600
D2Pak50nC21nC30A2.10V2.42V4A600VLXA04B600
D2Pak43nC21nC23A2.10V2.50V3A600VLXA03B600
105A
95A
60A
50A
30A
23A
IFSM
8.3mS
TO-220AC43nC21nC2.10V2.50V3A600VLXA03T600
TO-220AC82nC31nC2.10V2.35V8A600VLXA08T600
TO-220AC120nC43nC2.20V2.50V15A600VLXA15T600
TO-220AC140nC51nC2.30V2.50V20A600VLXA20T600
71nC
50nC
QRR
TJ=125ºC
30nC
21nC
QRR
TJ=25ºC
TO-220AC
TO-220AC
Package
2.00V
2.10V
VF
TJ=150ºC
2.27V6A600VLXA06T600
2.42V4A600VLXA04T600
VF
TJ=25ºCIF(AVG)
TJ=150ºCVRRM
MAX600V X-Series
TO-220AC94nC36nC70A2.10V2.40V10A600VLXA10T600
FullPak94nC36nC70A2.10V2.40V10A600VLXA10FP600
FullPak82nC31nC60A2.10V2.35V8A600VLXA08FP600
D2Pak82nC31nC60A2.10V2.35V8A600VLXA08B600
D2Pak71nC30nC50A2.00V2.27V6A600VLXA06B600
D2Pak50nC21nC30A2.10V2.42V4A600VLXA04B600
D2Pak43nC21nC23A2.10V2.50V3A600VLXA03B600
105A
95A
60A
50A
30A
23A
IFSM
8.3mS
TO-220AC43nC21nC2.10V2.50V3A600VLXA03T600
TO-220AC82nC31nC2.10V2.35V8A600VLXA08T600
TO-220AC120nC43nC2.20V2.50V15A600VLXA15T600
TO-220AC140nC51nC2.30V2.50V20A600VLXA20T600
71nC
50nC
QRR
TJ=125ºC
30nC
21nC
QRR
TJ=25ºC
TO-220AC
TO-220AC
Package
2.00V
2.10V
VF
TJ=150ºC
2.27V6A600VLXA06T600
2.42V4A600VLXA04T600
VF
TJ=25ºCIF(AVG)
TJ=150ºCVRRM
MAX600V X-Series
© Copyright 2010 Power Integrations 5
• Common Cathode Diodes reduce component cost – One Diode instead of Two
• Common Cathode Diodes reduce manufacturing cost –Less screws, Sil-Pad, Isolation washers, etc.
• Common Cathode diodes save space – Shorter heatsink can be used
TO-220AB71nC30nC50A2.00V2.27V6A600VLXA12T600C*
60A
30A
IFSM8.3mS
TO-220AB50nC21nC2.10V2.42V4A600VLXA08T600C*
82nC
QRRTJ=125ºC
31nC
QRRTJ=25ºC
TO-220AB
Package
2.10V
VFTJ=150ºC
2.35V8A600VLXA16T600C*
VFTJ=25ºC
IF(AVG) TJ=150ºC
VRRMMAX
600V X-Series(Dual Diode)
TO-220AB71nC30nC50A2.00V2.27V6A600VLXA12T600C*
60A
30A
IFSM8.3mS
TO-220AB50nC21nC2.10V2.42V4A600VLXA08T600C*
82nC
QRRTJ=125ºC
31nC
QRRTJ=25ºC
TO-220AB
Package
2.10V
VFTJ=150ºC
2.35V8A600VLXA16T600C*
VFTJ=25ºC
IF(AVG) TJ=150ºC
VRRMMAX
600V X-Series(Dual Diode)
Common Cathode 600V X-series
© Copyright 2010 Power Integrations 66
600V H-Series
Second generation high performance Diodes (optimized for switching frequencies above 80 KHz)
Lower Qrr than equivalent SiC Diodes up to around 120°C Slightly higher Vf and much lower Qrr than X-Series
TO-220AC26nC8.8nC80A2.20V2.56V8A600VQH08TZ600
80A
50A
30A
IFSM
8.3mS
TO-220AC14.9nC5.9nC2.10V2.50V3A600VQH03TZ600
TO-220AC30.5nC9.8nC2.30V2.63V12A600VQH12TZ600
19.4nC
QRR
TJ=125ºC
7.1nC
QRR
TJ=25ºC
TO-220AC
Package(Isolated)
2.15V
VF
TJ=150ºC
2.55V5A600VQH05TZ600
VF
TJ=25ºCIF(AVG)
TJ=150ºCVRRM
MAX600V H-Series
TO-220AC26nC8.8nC80A2.20V2.56V8A600VQH08TZ600
80A
50A
30A
IFSM
8.3mS
TO-220AC14.9nC5.9nC2.10V2.50V3A600VQH03TZ600
TO-220AC30.5nC9.8nC2.30V2.63V12A600VQH12TZ600
19.4nC
QRR
TJ=125ºC
7.1nC
QRR
TJ=25ºC
TO-220AC
Package(Isolated)
2.15V
VF
TJ=150ºC
2.55V5A600VQH05TZ600
VF
TJ=25ºCIF(AVG)
TJ=150ºCVRRM
MAX600V H-Series
© Copyright 2010 Power Integrations 77
300V Products
200A
100A
80A
37A
IFSM
8.3mS
TO-220AC27nC9nC1.34V1.60V6A300VLQA06T300
TO-220AC53nC13nC1.45V1.66V30A300VLQA30T300
44nC
38nC
QRR
TJ=125ºC
12nC
10nC
QRR
TJ=25ºC
TO-220AC
TO-220AC
Package
1.40V
1.36V
VF
TJ=150ºC
1.60V16A300VLQA16T300
1.58V10A300VLQA10T300
VF
TJ=25ºCIF(AVG)
TJ=150ºCVRRM
MAX
300V Q-Series(single diode)
200A
100A
80A
37A
IFSM
8.3mS
TO-220AC27nC9nC1.34V1.60V6A300VLQA06T300
TO-220AC53nC13nC1.45V1.66V30A300VLQA30T300
44nC
38nC
QRR
TJ=125ºC
12nC
10nC
QRR
TJ=25ºC
TO-220AC
TO-220AC
Package
1.40V
1.36V
VF
TJ=150ºC
1.60V16A300VLQA16T300
1.58V10A300VLQA10T300
VF
TJ=25ºCIF(AVG)
TJ=150ºCVRRM
MAX
300V Q-Series(single diode)
Q-Series 300V diodes are the highest performance 300V diodes available. The soft switching of this diode will dramatically reduce overshoot and EMI. Most customers will be able to eliminate snubbers across these diodes when used in output rectification applications.
TO-220AB44nC12nC100A1.40V1.60V16A300VLQA32T300C*
TO-220AB27nC8.5nC37A1.34V1.60V6A300VLQA12T300C*
200A
100A
80A
80A
IFSM
8.3mS
TO-220AB38nC10nC1.36V1.58V10A300VLQA20T300C*
TO-24753nC13nC1.45V1.66V30A300VLQA60A300C*
47nC
38nC
QRR
TJ=125ºC
12nC
10nC
QRR
TJ=25ºC
TO-247
D2PAK
Package
1.40V
1.36V
VF
TJ=150ºC
1.60V15A300VLQA30A300C*
1.58V10A300VLQA20B300C*
VF
TJ=25ºCIF(AVG)
TJ=150ºCVRRM
MAX
300V Q-Series(Dual Diode)
TO-220AB44nC12nC100A1.40V1.60V16A300VLQA32T300C*
TO-220AB27nC8.5nC37A1.34V1.60V6A300VLQA12T300C*
200A
100A
80A
80A
IFSM
8.3mS
TO-220AB38nC10nC1.36V1.58V10A300VLQA20T300C*
TO-24753nC13nC1.45V1.66V30A300VLQA60A300C*
47nC
38nC
QRR
TJ=125ºC
12nC
10nC
QRR
TJ=25ºC
TO-247
D2PAK
Package
1.40V
1.36V
VF
TJ=150ºC
1.60V15A300VLQA30A300C*
1.58V10A300VLQA20B300C*
VF
TJ=25ºCIF(AVG)
TJ=150ºCVRRM
MAX
300V Q-Series(Dual Diode)
© Copyright 2010 Power Integrations 88
H-Series: Higher Performance/Lower Cost
• The new H-Series from Qspeed offers higher performance than our Q-Series at lower cost• Close to SiC performance with much lower cost than SiC
Value = Performance/CostQspeed products have the highest Value of ANY 600V diodes
Performance
Cos
tSiliconCarbide
Tandem
UltrafastQspeedX-Series
QspeedH-Series
Constant Value Line
Qspeed Value Line
© Copyright 2010 Power Integrations 9
CCM PFC Diode Selector Guide
LXA03T600100-350W
LXA04T600350-500W
LXA06T600500-700W
LXA08T600700-900W
LXA10T600900-1200W
LXA15T6001200-1600W
LXA20T6001600-2200W
LXA03T600100-450W
LXA04T600450-600W
LXA06T600600-900W
LXA08T600900-1200W
LXA10T6001200-1500W
LXA15T6001500-2000W
LXA20T6002000-2800W
85-265 VAC 180-265 VAC
QH03TZ600100-350W
QH05TZ600350-600W
QH08TZ600600-900W
QH12TZ600900-1300W
85-265 VAC 180-265 VAC
QH03TZ600100-450W
QH05TZ600450-700W
QH08TZ600700-1000W
QH12TZ6001000-1500W
80 kHz
X-Series is the highest value below 80 kHz and H-Series is the best value above 80 kHz.
This selector guide chooses the best performance based on power level.
© Copyright 2010 Power Integrations 1111
Technology Advantages
Qspeed uses proprietary and patented device design and processes to create the highest performance Silicon Rectifiers in the world
Qspeed products are developed to give optimal performance to cost ratios 600V X-Series was developed for optimal operation at less than 80kHz 600V Q-Series was developed for operation above 80kHz 600V H-Series is the next generation to Q-Series 300V Q-Series are the highest switching performance of any diode
– Optimized for high frequency DC-DC Output rectification The basic structure of the diode is called Merged PN Schottky (MPS)
Combines both a Schottky and PN junction in the same device Qspeed devices are manufactured using a 0.35 micron technology
Small feature size enhances performance Small feature size gives very predictable results (high Yield)
Qspeed defines and controls all manufacturing processes Wafer fab Packaging
© Copyright 2010 Power Integrations 1212
Packaging: Q-Series & X-Series 600V
Tin PlatedFrame
Diode
Cathode Anode Cathode Anode
Tin PlatedFrame
300VDiode 2
300VDiode 1
• X-Series: • Standard TO-220 package• Single diode rated for 600V
• H-Series and Q-Series: • Isolated TO-220 package• Series connected 300V Diodes
CeramicSubstrate
© Copyright 2010 Power Integrations 1414
Active Area (MPS) Cross Section
Anode
Cathode
Schottky Contact
P-Wells
Buffer Layer
Hybrid Schottky P-N Diode combines the best of each structure
Low Knee Voltage/High Speed Schottky Low Leakage/High Blocking P-N Deep Trench P-Wells provide conductivity
Modulation efficiently in the bulk material (less hole injection = lower recombination: Qrr)
© Copyright 2010 Power Integrations 1515
Forward Bias
Anode
Cathode
When forward biased, the Schottky conducts initially
As forward bias continues, the P-N Junctions conduct and conductivity modulation begins
The combination provides fast early turn-on and also high current density capability
© Copyright 2010 Power Integrations 1616
Reverse Bias
Cathode
Q-Series MPS diode with reverse bias
Schottky-only structures would have high leakage
Depletion region builds around the P+ Implants to shield the Schottky barrier and provide low leakage
Anode
VR
IR
© Copyright 2010 Power Integrations 1818
Reverse Recovery Current
Comparison of Qrr for H-Series, Q-Series, X-Series, Tandem, and an Ultrafast diode
-8
-6
-4
-2
0
2
4
6
8
0 20 40 60 80 100 120 140 160 180 200Time (ns)
ID(A
)
© Copyright 2010 Power Integrations 1919
Ultra Low Qrr
Comparison of Qrr for Tandem, SiC, Q-Series, and H-Series versus Tj.
Qrr versus Junction Temperature
0
10
20
30
40
50
60
70
25C 50C 75C 100C 125C
STTH806TTI-Qrr
C3D08060-Qrr
LQA08TC600-Qrr
QH08TZ600-Qrr
© Copyright 2010 Power Integrations 2222
Switch Current is Reduced with QspeedReducing Turn-On Loss
CCM Boost PFC
© Copyright 2010 Power Integrations 2323
Ultrafast Qspeed
• Designers choose low frequency because of ultrafast diode caused losses
• Using Qspeed allows higher frequency operation
• High Frequency operation let’s designers choose a smaller boost inductor (saves money)
• A smaller boost inductor uses less wire and will have lower losses
• Overall losses at high frequency can be lower than low frequency design
CCM Boost PFC
© Copyright 2010 Power Integrations 2424
Comparisons of three Qspeed diodes and SiC in a 500W Server Power Supply Application104kHz Switching Frequency
78.00%
80.00%
82.00%
84.00%
86.00%
88.00%
90.00%
92.00%
10% 20% 50% 75% 100%
CSD04060A QH05TZ600 QH08TZ600 QH12TZ600
CCM Boost PFC
© Copyright 2010 Power Integrations 25
EFF 100V
0.0%
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
70.0%
80.0%
90.0%
100.0%
0% 5% 10%
15%
20%
25%
30%
35%
40%
45%
50%
55%
60%
65%
70%
75%
80%
85%
90%
95%
100%
LOAD
EFF
STTH806DTI
LXA08TZ600
Comparisons of Qspeed FullPak X-Series and ST Tandem at 850W, 100VAC Input
STTH806DTILXA08TZ6000% 0.0% 0.0%5% 59.5% 60.1%
10% 71.5% 72.0%15% 79.3% 79.7%20% 82.2% 82.5%25% 84.3% 84.7%30% 85.6% 85.9%35% 86.7% 87.0%40% 87.3% 87.5%45% 87.8% 88.0%50% 88.1% 88.2%55% 88.3% 88.5%60% 88.3% 88.4%65% 88.4% 88.4%70% 88.3% 88.4%75% 88.2% 88.2%80% 88.0% 88.1%85% 87.9% 87.9%90% 87.5% 87.5%95% 87.3% 87.3%
100% 87.0% 86.9%
LOAD(835W)
100V/60HzEfficiency(%)
LXA08FP600
FullPak X-Series (100V Data)
© Copyright 2010 Power Integrations 2626
Reverse RecoveryCondition: 400V, 8Amps, 200A/us, 100C
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
0 20 40 60 80 100 120 140 160 180 200t(ns)
ID(A
)
Q-Series
Platinum Doped
Diode reverse recovery definitions
• Diode Recovery Softness = tb/ta• Softer diodes have less ringing
• Soft diodes create less EMI• Qspeed diodes have much lower junction capacitance than Silicon Carbide Schottky Diodes
• Lower Capacitance = Less ringing
EMI Performance
© Copyright 2010 Power Integrations 2727
Conducted EMI – Ultrafast Diode
840W Power Supply Test Results
EMI Performance
© Copyright 2010 Power Integrations 2828
840W Power Supply Test Results
Conducted EMI – Qspeed Diode
EMI Performance
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