nmos fabrication

•nMOS•CMOS for logic•BiCMOS for I/O and driver circuit

MOS fabr ication process

nMOS fabr ication

Summary of an nMOS process

Depletion mode only

L-Edit layout program

Mask Layout

• Setup > Technology > MOSIS: Orbit 2U SCNA

Technology Setup

•Setup > CIF

CIF Layers

CIF Layer NamesCMOS Poly Gate (CPF)

CMOS Electrode (CPS)

CMOS Active AreaCMOS Metal Fir st

CMOS Metal Second

CMOS Well N-diff

CMOS Select NCMOS Select P

Poly (Poly1)

(Poly2)

Active (Thinox=n-diff + transistor channel)Metal 1

Metal 2

N well

N selectP select

CMOS Contact Poly

CMOS Contact Electrode

CMOS Contact ActiveCMOS Via

CMOS Overglass

Poly contact

Poly2 contact

Active contactVia

Overglass

(1) Use Layout program (L-Edit) to draw 6 masks of an enhancement mode nMOSprocess by using L-edit and Orbit 2µm double metal, double poly, CMOS technology.

Enhancement Mode NMOS Mask Layout

4λ 4λ 4λ 4λ

Use CAA (CMOS Active Area) layer to draw a W=28 H=20 rectangular and define the n-diffusion +transistor channel.

Mask #1- CAA

4λ 4λ 4λ 4λ

Mask #2- CPG

4λ 4λ 4λ 4λ

Use CPG (CMOS Poly Gate) layer to draw a W=4 H=24 and a W=8 H=8 rectangulars and define the poly gate.

4λ 4λ 4λ 4λ

Mask #2 again for n+-diffusion (CSN)

Use CSN (CMOS select N) to draw a W=32 H=24 rectangular for you to select the n-diffusion region within CAA, but not protected by CPG.

Cross-Section

4λ 4λ 4λ 4λ

Mask #3- CCP & CCA

Use CCP (CMOS Contact Poly) and CCA (CMOS Contact Active) to draw 5 W=4 H=4 rectangular to open the poly contacts through thick OX

CCACCA

Cross Section after Mask #3

4λ 4λ 4λ 4λ

Mask #4 - CMF

Use CMF to draw metal lines to contact Poly and n-diffusion through CCP and CCA open areas.

Cross Section after Mask #4

Mask #5 – Via layer

Use CVA to draw 3 W=4, H=4 via openings through OX.CVA

Mask #6 – Overgalss Opening

Use COG to draw 3 W=4, H=4 via openings through Overglass(demo purpose, violate design rules).

Summary of nMOS Layers

P-doped Si wafer

n+- diffusion n+- diffusionOX

Thin OX

Poly1(CPG)

Overglass

COGCVA

Metal (CMF)OX

nmos fabrication

Documents

NMOS processingAndScaling

Structure géométrique d’un NMOS

NMOS Inverter Labdiyhpl.us/~nmz787/mems/unorganized/NMOS_Inv_Lab.pdf · NMOS Inverter Lab Page 7 VTC NMOS INVERTER- NMOS ENHANCEMENT LOAD NMOS ENHANCEMENT LOAD +V VIN VO Off M2 M1

الکترونیک دیجیتال منطق NMOS

NMOS Fundamentals

Secure Critical NMOS APIs with AMWA NMOS BCP-003 · NMOS APIs to allow for multi-vendor interoperability & ease of development •BCP-003-01/02 provides Best Current Practices for

Pseudo NMOS Logic Pass-Transistor Logicmtoledo/4207/S2011/C10_11.pdf · Pseudo NMOS Logic Pass-Transistor Logic INEL 4207 - Spring 2011. Figure 15.1 (a) The pseudo-NMOS logic inverter

CMOS Inverter z - Jon Tse · PDF fileCMOS Inverter VTC 2.5 NMOS off PMOS res NMOS sat PMOSres 5 2 NMOS sat ... zSPICE simulator solves the equations numericallySPICE simulator solves

NMOS Inverter Lab

Cadence Layout for SRAM - Bill Hung · Web viewDrawing NMOS 5 Exploring Cadence Transistor Sizes 7 NMOS 7 PMOS 9 Testing NMOS and PMOS Extraction 11 NMOS 11 PMOS 12 Half SRAM Cell

Cryptography and Network Security B.E., VII Semester ...vtu.ac.in/pdf/cbcs/5sem/tcsyll7.pdf · 04 Exam marks 80 Total Number of ... Fabrication: nMOS Fabrication, CMOS Fabrication[P-well

Nmos Fabrication Process

ashokpbrvits.files.wordpress.com · Web viewIntroduction: Basic steps of IC fabrication, PMOS, NMOS, CMOS &BiCMOS, SOI process. technologies, MOS transistors - MOS transistor switches

Experiment Using Capture CMOS & NMOS

Transistor nMOS

The Physical Structure (NMOS) - users.encs.concordia.ca

Implementation technology. Transistor Switches NMOS

NMOS FABRICATION STEPS

Circuite logice NMOS

Lecture 2- CMOS Fabrication Process · CMOS Fabrication Process The CMOS process requires that both n-channel (NMOS) and p-channel (PMOS) transistors be built in the same silicon