Methods for resist stripping and cleaning surfaces substantially free of contaminants

New Developments in the Metal Finishing Field Compiled by Anselm Kuhn, Metal Finishing Information Services Ltd.

Recently published patents

Methods and Apparatus for Electropolishing Metal Interconnections on Semiconductor Devices U.S. 2004256245 (ACM Res. Inc.) Wang, H. Electropolishing of a metal layer on semiconductor wafer using a wafer chuck.

Methods for Resist Stripping and Cleaning Surfaces Substantially Free of Contaminants U.S. 2004261814 Boumerzoug, M., et al. A method using cryogenic cleaning medium sprayed from a nozzle. A range of inorganic and organic gases can be used to strip photore- sist or modify residues to make them more soluble. A plasma process can be used simultaneous- ly or sequentially, with oscillating or vibrating nozzle.

Coated Art ic le w i th Improved Barrier Layer Structure and Method of Making the Same U.S. 2004253455 (Guardian Ind.) Stachowiak, G. A coated article and a correspon- ding method of making the same with a coating, including a thin metal or metal nitride contact layer (e.g. NiCr, nickel, chromium, nitrides such as CrNx or NiCrNx) located directly between and con- tacting an infrared (IR) reflecting layer (e.g. silver) and an oxide bar- rier layer (e.g. NiCrOx).

Plasma Etch Resistant Coating and Process U.S. 2004255868 Amrhein, E;Pomared~C.

A protective coating for susceptors used in semiconductor deposition chambers, CVD, or plasma etch chambers. Silicon nitride, which is then oxidized, may be used.

Method for Deposit ing Refractory Metal Layers Employing Sequential Deposition Techniques US. 2004247788 Fang, H., et al. Vapor deposition of tungsten, which is then borided, or using silane or derivatives in cyclical mode using CVD or PVD.

Cleaning Formulations and Methods for Manufacturing the Same US. 2004266658 Lenhart, J.G. Cleaning compositions, which may include a fatty acid methyl ester and at least one of a non- ionic surfactant , a cationic sur- factant, a chelating agent, a sili- cate salt, a xylene sulfonate salt, a hydroxide base, and a combina- tion thereof.

Method for Producing Smooth Indium-Tin-Oxide Layers on Substrates and a Substrate Coating of Indium-Tin-Oxide US. 2004258920 Bender, M. Init ial ITO layer is sput ter deposited, then hea ted to tem- perature above recrystallization, then further ITO deposited.

Self-Fill ing Wet Electrochemical Cells by Laser Processing US. 20042563359 Arnold, C.B.; Pique, A. A method of preparing high-

capacity hydrous ru then ium oxide micro-ultracapacitors. A laser direct-write process deposits a film of hydrous ru then ium oxide in sulfuric acid under ambi- ent temperature and atmospheric conditions. A dual-laser process combining infrared and ultravio- let light is used for fabricating a complete wet electrochemical cell in a single processing step. Ultraviolet laser micromachining is used to tailor the shape and size of the deposited material into planar electrodes. The micro- ultracapacitors have improved size, weight, and cost efficiency and exhibit high specific power and high specific energy.

FABRICATION OF TITANIUM AND TITANIUM ALLOY ANODE FOR DIELECTRIC AND INSULATED FILMS U.S. 2004251140 Chung, J. A method for constructing a tita- n ium film capacitor, which includes fabricating an anode from at least one of t i tanium and a t i tan ium alloy and forming a homogeneous anode film on at least one surface of the anode.

Electroless Plating Apparatus and Electroless Plating Method U.S. 2004251141 (Tokyo Electron Ltd.) Chung, G.; Marumo, Y. A plate and a subs t ra te are placed to face each other and the electrolyte is je t ted onto the plate, thereby t reat ing the sub- strate. At this time, bubbles in the t r e a t m e n t liquid are dis- charged from an opening formed in the plate, thereby avoiding non-uniformity caused by the

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