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LTC5593
15593f
TYPICAL APPLICATION
FEATURES DESCRIPTION
Dual 2.3GHz to 4.5GHz High Dynamic Range
Downconverting Mixer
The LTC®5593 is part of a family of dual-channel high dy-namic range, high gain downconverting mixers covering the 600MHz to 4.5GHz RF frequency range. The LTC5593 is optimized for 2.3GHz to 4.5GHz RF applications. The LO frequency must fall within the 2.1GHz to 4.2GHz range for optimum performance. A typical application is a LTE or WiMAX multichannel or diversity receiver with a 2.3GHz to 2.7GHz RF input.
The LTC5593’s high conversion gain and high dynamic range enable the use of lossy IF filters in high selectivity receiver designs, while minimizing the total solution cost, board space and system-level variation. A low current mode is provided for additional power savings and each of the mixer channels has independent shutdown control.
LTE Diversity Receiver
APPLICATIONS
n Conversion Gain: 8.5dB at 2500MHzn IIP3: 27.7dBm at 2500MHzn Noise Figure: 9.5dB at 2500MHzn 15.9dB NF Under 5dBm Blockingn High Input P1dBn 52dB Channel Isolation at 2500MHz n 3.3V Supply, 1.3W Power Consumptionn Low Power Mode for 0.8W Consumption n Independent Channel Shutdown Controln 50Ω Single-Ended RF and LO Inputsn LO Input Matched In All Modesn 0dBm LO Drive Leveln –40°C to 105°C Operationn Small QFN (5mm × 5mm) Package and Solution Size
n Wireless Infrastructure Diversity Receivers (LTE, WiMAX)n Transmit DPD Receiversn MIMO Infrastructure Receiversn Broadband Microwave ReceiversL, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.
IFAMP ADC
IFAMP
RF2500MHz TO
2570MHzLNA
BIAS
BIAS
SYNTH
VCCIF3.3V or 5V
VCC3.3V
22pF
22pF
22pF
1µF
22pF 1µF
22pF
150nH 150nH
1nF
1nF
190MHzSAW
190MHzBPF
IMAGEBPF
RFA
RFB
ENA
LO
ENA(0V/3.3V)
LO 2345MHz1.5pF
VCCA
VCCB
IFA+ IFA–
IFB+ IFB–
5593 TA01a
LOAMP
LOAMP
ENB ENB(0V/3.3V)
RF2500MHz TO
2570MHzLNA
22pFIMAGE
BPF
IFAMP
IFAMP ADC
150nH 150nH
1nF
1nF 190MHzSAW
190MHzBPF
VCCIFVCC
High Dynamic Range Dual Downconverting Mixer FamilyPART NUMBER RF RANGE LO RANGE
LTC5590 600MHz to 1.7GHz 700MHz to 1.5GHz
LTC5591 1.3GHz to 2.3GHz 1.4GHz to 2.1GHz
LTC5592 1.6GHz to 2.7GHz 1.7GHz to 2.5GHz
LTC5593 2.3GHz to 4.5GHz 2.1GHz to 4.2GHz
Wideband Conversion Gain,IIP3 and NF vs IF Frequency
(LTC5593 Only, Measured on Evaluation Board)
IF OUTPUT FREQUENCY (MHz)155
6.0
G C (d
B)
IIP3 (dBm), SSB NF (dB)
6.5
7.5
8.0
8.5
11.0
9.5
175 195 205
5593 TA01b
7.0
10.0
10.5
9.0
8
10
14
16
18
28IIP3
22
12
24
26
20
165 185 215 225
LO = 2345MHzPLO = 0dBmRF = 2535 ±35MHzTEST CIRCUIT IN FIGURE 1
GC
NF
LTC5593
25593f
PIN CONFIGURATIONABSOLUTE MAXIMUM RATINGS
Supply Voltage (VCC) ...............................................4.0VIF Supply Voltage (VCCIF) .........................................5.5VEnable Voltage (ENA, ENB) ..............–0.3V to VCC + 0.3VBias Adjust Voltage (IFBA, IFBB) ......–0.3V to VCC + 0.3VPower Select Voltage (ISEL) .............–0.3V to VCC + 0.3VLO Input Power (2GHz to 5GHz) .............................9dBmLO Input DC Voltage ............................................... ±0.1VRFA, RFB Input Power (2GHz to 5GHz) ................15dBmRFA, RFB Input DC Voltage .................................... ±0.1VOperating Temperature Range (TC) ........ –40°C to 105°CStorage Temperature Range .................. –65°C to 150°CJunction Temperature (TJ) .................................... 150°C
(Note 1)
24 23 22 21 20 19
7 8 9
TOP VIEW
25GND
UH PACKAGE24-LEAD (5mm × 5mm) PLASTIC QFN
10 11 12
6
5
4
3
2
1
13
14
15
16
17
18RFA
CTA
GND
GND
CTB
RFB
ISEL
ENA
LO
GND
ENB
GND
GND
IFGN
DA
IFA+
IFA–
IFBA
V CCA
GND
IFGN
DB IFB+
IFB–
IFBB
V CCB
TJMAX = 150°C, θJC = 7°C/W
EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATIONLEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LTC5593IUH#PBF LTC5593IUH#TRPBF 5593 24-Lead (5mm × 5mm) Plastic QFN –40°C to 105°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on non-standard lead based finish parts.For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
LTC5593
35593f
DC ELECTRICAL CHARACTERISTICS VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, ISEL = low, TC = 25°C, unless otherwise noted. Test circuit shown in Figure 1. (Note 2)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Supply Requirements (VCCA, VCCB, VCCIFA, VCCIFB)
VCCA, VCCB Supply Voltage (Pins 12, 19) 3.1 3.3 3.5 V
VCCIFA, VCCIFB Supply Voltage (Pins 9, 10, 21, 22) 3.1 3.3 5.3 V
Mixer Supply Current (Pins 12, 19) Both Channels Enabled 196 242 mA
IF Amplifier Supply Current (Pins 9, 10, 21, 22) Both Channels Enabled 200 251 mA
Total Supply Current (Pins 9, 10, 12, 19, 21, 22) Both Channels Enabled 396 493 mA
Total Supply Current – Shutdown ENA = ENB = Low 500 µA
Enable Logic Input (ENA, ENB) High = On, Low = Off
ENA, ENB Input High Voltage (On) 2.5 V
ENA, ENB Input Low Voltage (Off) 0.3 V
ENA, ENB Input Current –0.3V to VCC + 0.3V –20 30 µA
Turn-On Time 0.9 µs
Turn-Off Time 1.0 µs
Low Power Mode Logic Input (ISEL) High = Low Power, Low = Normal Power Mode
ISEL Input High Voltage 2.5 V
ISEL Input Low Voltage 0.3 V
ISEL Input Current –0.3V to VCC + 0.3V –20 30 µA
Low Power Mode Current Consumption (ISEL = High)
Mixer Supply Current (Pins 12, 19) Both Channels Enabled 127 159 mA
IF Amplifier Supply Current (Pins 9, 10, 21, 22) Both Channels Enabled 120 157 mA
Total Supply Current (Pins 9, 10, 12, 19, 21, 22) Both Channels Enabled 247 316 mA
LTC5593
45593f
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 2300MHz RF = 2500MHz RF = 2700MHz RF = 3200MHz RF = 3500MHz RF = 3800MHz
6.8
9.0 8.5 8.0 8.1 7.6 7.0
dB dB dB dB dB dB
Conversion Gain Flatness RF = 2500 ±30MHz, LO = 2310MHz, IF = 190 ±30MHz ±0.25 dB
Conversion Gain vs Temperature TC = –40ºC to 105ºC, RF = 2500MHz –0.008 dB/°C
Input 3rd Order Intercept RF = 2300MHz RF = 2500MHz RF = 2700MHz RF = 3200MHz RF = 3500MHz RF = 3800MHz
24.0
26.1 27.7 27.6 26.5 26.0 26.1
dBm dBm dBm dBm dBm dBm
SSB Noise Figure RF = 2300MHz RF = 2500MHz RF = 2700MHz RF = 3200MHz RF = 3500MHz RF = 3800MHz
9.4 9.5 9.7
11.2 11.3 12.0
dB dB dB dB dB dB
SSB Noise Figure Under Blocking fRF =2500MHz, fLO = 2310MHz, fBLOCK = 2600MHz, PBLOCK = 5dBm PBLOCK = 8dBm
15.9 19.4
dB dB
2RF-2LO Output Spurious Product (fRF = fLO + fIF/2)
fRF = 2405MHz at –10dBm, fLO = 2310MHz, fIF = 190MHz
–64 dBc
3RF-3LO Output Spurious Product (fRF = fLO + fIF/3)
fRF = 2373.3MHz at –10dBm, fLO = 2310MHz, fIF = 190MHz
–70 dBc
Input 1dB Compression fRF = 2500MHz, VCCIF = 3.3V fRF = 2500MHz, VCCIF = 5V
10.4 13.7
dBm dBm
PARAMETER CONDITIONS MIN TYP MAX UNITS
LO Input Frequency Range 2100 to 3800 MHz
RF Input Frequency Range Low Side LO High Side LO
2300 to 4000 2300 to 4000
MHz MHz
IF Output Frequency Range Requires External Matching 5 to 600 MHz
RF Input Return Loss ZO = 50Ω, 2200MHz to 3800MHz >12 dB
LO Input Return Loss ZO = 50Ω, 2400MHz to 3600MHz >12 dB
IF Output Impedance Differential at 190MHz 274Ω||2.4pF R||C
LO Input Power fLO = 2100MHz to 3800MHz –4 0 6 dBm
LO to RF Leakage fLO = 2100MHz to 3800MHz <–33 dBm
LO to IF Leakage fLO = 2100MHz to 3800MHz <–30 dBm
RF to LO Isolation fRF = 2300MHz to 4000MHz >44 dB
RF to IF Isolation fRF = 2300MHz to 4000MHz >38 dB
Channel-to-Channel Isolation fRF = 2500MHz fRF = 3500MHz
52 44
dB dB
AC ELECTRICAL CHARACTERISTICS VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, ISEL = low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (∆f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
Low Side LO Downmixer Application: ISEL = Low, IF = 190MHz, fLO = fRF – fIF
LTC5593
55593f
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 2500MHz RF = 3500MHz
7.8 6.3
dB dB
Input 3rd Order Intercept RF = 2500MHz RF = 3500MHz
21.6 21.0
dBm dBm
SSB Noise Figure RF = 2500MHz RF = 3500MHz
9.2 11.5
dB dB
Input 1dB Compression RF = 2500MHz, VCCIF = 3.3V RF = 2500MHz, VCCIF = 5V
10.0 10.7
dBm dBm
AC ELECTRICAL CHARACTERISTICS VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, TC = 25°C, PLO = 0dBm, PRF = –3dBm (∆f = 2MHz for 2-tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3)
Low Power Mode, Low Side LO Downmixer Application: ISEL = High, IF = 190MHz, fLO = fRF – fIF
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 2300MHz RF = 2500MHz RF = 2700MHz RF = 3200MHz RF = 3500MHz RF = 3800MHz
8.7 8.4 8.0 7.7 7.2 6.8
dB dB dB dB dB dB
Conversion Gain Flatness RF = 2500 ±30MHz, LO = 2690MHz, IF = 190 ±30MHz ±0.1 dB
Conversion Gain vs Temperature TC = –40ºC to 105ºC, RF = 2500MHz –0.006 dB/°C
Input 3rd Order Intercept RF = 2300MHz RF = 2500MHz RF = 2700MHz RF = 3200MHz RF = 3500MHz RF = 3800MHz
25.1 25.5 25.9 24.5 24.2 23.8
dBm dBm dBm dBm dBm dBm
SSB Noise Figure RF = 2300MHz RF = 2500MHz RF = 2700MHz RF = 3200MHz RF = 3500MHz RF = 3800MHz
10.0 10.5 10.6 11.1 12.1 12.1
dB dB dB dB dB dB
SSB Noise Figure Under Blocking fRF = 2500MHz, fLO = 2690MHz, fBLOCK = 2400MHz, PBLOCK = 5dBm PBLOCK = 8dBm
17.8 21.8
dB dB
2LO-2RF Output Spurious Product (fRF = fLO – fIF/2)
fRF = 2595MHz at –10dBm, fLO = 2690MHz, fIF = 190MHz
–66 dBc
3LO-3RF Output Spurious Product (fRF = fLO – fIF/3)
fRF = 2626.67MHz at –10dBm, fLO = 2690MHz, fIF = 190MHz
–75 dBc
Input 1dB Compression RF = 2500MHz, VCCIF = 3.3V RF = 2500MHz, VCCIF = 5V
10.7 14.1
dBm dBm
High Side LO Downmixer Application: ISEL = Low, IF = 190MHz, fLO = fRF + fIF
LTC5593
65593f
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 2500MHz RF = 3500MHz
7.4 5.9
dB dB
Input 3rd Order Intercept RF = 2500MHz RF = 3500MHz
22.1 20.2
dBm dBm
SSB Noise Figure RF = 2500MHz RF = 3500MHz
10.6 12.4
dB dB
Input 1dB Compression RF = 2500MHz, VCCIF = 3.3V RF = 2500MHz, VCCIF = 5V
10.9 11.7
dBm dBm
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.Note 2: The LTC5593 is guaranteed functional over the case operating temperature range of –40°C to 105°C. (θJC = 7°C/W)
Note 3: SSB Noise Figure measured with a small-signal noise source, bandpass filter and 6dB matching pad on RF input, bandpass filter and 6dB matching pad on the LO input, and no other RF signals applied.Note 4: Channel A to channel B isolation is measured as the relative IF output power of channel B to channel A, with the RF input signal applied to channel A. The RF input of channel B is 50Ω terminated and both mixers are enabled.
AC ELECTRICAL CHARACTERISTICS VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, TC = 25°C, PLO = 0dBm, PRF = –3dBm (∆f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3)
Low Power Mode, High Side LO Downmixer Application: ISEL = High, IF = 190MHz, fLO = fRF + fIF
LTC5593
75593f
2.3GHz to 2.7GHz, low side LO.TYPICAL AC PERFORMANCE CHARACTERISTICSVCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, ISEL = low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
SSB NF vs RF FrequencyConversion Gain and IIP3 vs RF Frequency
Channel Isolation vs RF Frequency
2300MHz Conversion Gain, IIP3 and NF vs LO Power
2700MHz Conversion Gain, IIP3 and NF vs LO Power
2500MHz Conversion Gain, IIP3 and NF vs LO Power
Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)
Conversion Gain, IIP3 and RF Input P1dB vs Temperature
Conversion Gain, IIP3 and NF vs IF Supply Voltage (Dual Supply)
RF FREQUENCY (GHz)2.2
19
IIP3
(dBm
) GC (dB)
21
23
25
27
29
6
8
10
12
14
16
IIP3
GC
2.3 2.4 2.5 2.6
5593 G01
2.7 2.8
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.2
6
SSB
NF (d
B)
8
10
12
14
16
2.3 2.4 2.5 2.6
5593 G02
2.7 2.8
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.2
40
ISOL
ATIO
N (d
B)
44
48
52
56
60
2.3 2.4 2.5 2.6
5593 G03
2.7 2.8
105°C85°C25°C–40°C
LO INPUT POWER (dBm)–6
7
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
11
15
19
23
–2 2–4 0 4
5593 G04
6
27
9
13
17
21
25
29
0
4
8
12
16
20
2
6
10
14
18
22
IIP3
NF
85°C25°C–40°C
GC
LO INPUT POWER (dBm)–6
7
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
11
15
19
23
–2 2–4 0 4
5593 G05
6
27
9
13
17
21
25
29
0
4
8
12
16
20
2
6
10
14
18
22
85°C25°C–40°C
GC
IIP3
NF
LO INPUT POWER (dBm)–6
7
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
11
15
19
23
–2 2–4 0 4
5593 G06
6
27
9
13
17
21
25
29
0
4
8
12
16
20
2
6
10
14
18
22
85°C25°C–40°C
NF
GC
IIP3
NF
VCC, VCCIF SUPPLY VOLTAGE (V)3.0
7
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
11
15
19
23
3.2 3.43.1 3.3 3.5
5593 G07
3.6
27
9
13
17
21
25
29
0
4
8
12
16
20
2
6
10
14
18
22
85°C25°C–40°C
RF = 2500MHzVCC = VCCIF
IIP3
GC
NF
VCCIF SUPPLY VOLTAGE (V)3.0
7
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
11
15
19
23
3.6 4.23.3 3.9 4.5 4.8 5.1
5593 G08
5.4
27
9
13
17
21
25
29
0
4
8
12
16
20
2
6
10
14
18
22
85°C25°C–40°C
RF = 2500MHzVCC = 3.3V
IIP3
GC
NF
CASE TEMPERATURE (°C)–40 –25
G C (d
B), I
IP3
(dBm
), P1
dB (d
Bm)
13
25
27
29
5 50 65 80
5593 G09
9
21
17
11
23
7
19
15
–10 20 35 95 110
VCCIF = 5VVCCIF = 3.3V
RF = 2500MHz
IIP3
P1dB
GC
LTC5593
85593f
RF FREQUENCY (GHz)2.2
–75
RELA
TIVE
SPU
R LE
VEL
(dBc
)
–70
–65
–60
–55
2.3 2.4 2.5 2.6
5593 G12
2.7 2.8
PRF = –10dBm
2RF-2LO
3RF-3LO
RF INPUT POWER (dBm)–15
–80
OUTP
UT P
OWER
(dBm
)
–70
–50
–40
–30
20
–10
–9 –3 0 12
5593 G11
–60
0
10
–20
–12 –6 3 6 9
IFOUT(RF = 2500MHz)
2RF-2LO(RF = 2405MHz)
3RF-3LO(RF = 2373.33MHz)
LO = 2310MHz
2.3GHz to 2.7GHz, low side LO (continued).TYPICAL AC PERFORMANCE CHARACTERISTICSVCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
2-Tone IF Output Power, IM3 and IM5 vs RF Input Power
2 × 2 and 3 × 3 Spurs vs RF Frequency
SSB Noise Figure vs RF Blocker Level RF Isolation vs RF FrequencyLO Leakage vs LO Frequency
Single-Tone IF Output Power, 2 × 2 and 3 × 3 Spurs vs RF Input Power
RF INPUT POWER (dBm/TONE)–12
–80
OUTP
UT P
OWER
/TON
E (d
Bm)
–60IM3 IM5
–40
–20
–9 –6 –3 0
5593 G10
3
0
20
IFOUT
–70
–50
–30
–10
10
6
RF1 = 2499MHzRF2 = 2501MHzLO = 2310MHz
LO FREQUENCY (GHz)2.0
–60
LO L
EAKA
GE (d
Bm)
–50
–40
–30
–20
2.1 2.2 2.3 2.4
5593 G14
2.5 2.6 2.7 2.8
LO-RF
LO-IF
RF FREQUENCY (GHz)2.2
35
ISOL
ATIO
N (d
B)
40
45
50
55
65
2.3 2.4 2.5 2.6
RF-LO
RF-IF
5593 G15
2.7 2.8
60
RF BLOCKER POWER (dBm)–25
16
18
22
–10 0
5593 G13
14
12
–20 –15 –5 5 10
10
8
20
SSB
NF (d
B)
PLO = –3dBmPLO = 0dBmPLO = 6dBm
RF = 2500MHzLO = 2310MHzBLOCKER = 2600MHz
Conversion Gain Distribution SSB Noise Figure DistributionIIP3 Distribution
CONVERSION GAIN (dB)7.8
20
25
35RF = 2500MHz
8.4 8.8
5593 G16
15
10
8.0 8.2 8.6 9.0 9.2 9.4
5
0
30
DIST
RIBU
TION
(%)
85°C25°C–40°C
IIP3 (dBm)24.9 25.3 26.1 26.9
DIST
RIBU
TION
(%)
12
16
20
28.1
5593 G17
8
4
10
14
18
6
2
025.7 26.5 27.3 27.7
RF = 2500MHz85°C25°C–40°C
SSB NOISE FIGURE (dB)7.8
20
25
35RF = 2500MHz
9.0 9.8
5593 G18
15
10
8.2 8.6 9.4 10.2 10.6 11.0 11.4
5
0
30
DIST
RIBU
TION
(%)
85°C25°C–40°C
LTC5593
95593f
TYPICAL AC PERFORMANCE CHARACTERISTICSTYPICAL AC PERFORMANCE CHARACTERISTICS2.3GHz to 2.7GHz, low side LO, ISEL = high (low power mode). VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
SSB NF vs RF FrequencyConversion Gain and IIP3 vs RF Frequency
Channel Isolation vs RF Frequency
2300MHz Conversion Gain, IIP3 and NF vs LO Power
2500MHz Conversion Gain, IIP3 and NF vs LO Power
2700MHz Conversion Gain, IIP3 and NF vs LO Power
RF Isolation and LO Leakage vs Frequency
Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)
Conversion Gain, IIP3 and RF Input P1dB vs Temperature
RF FREQUENCY (GHz)2.2
12
IIP3
(dBm
) GC (dB)
14
16
18
20
24
IIP3
GC
2.3 2.4 2.5 2.65593 G19
2.7 2.8
22
5
7
9
11
13
17
15
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.2
6
SSB
NF (d
B)
8
10
12
14
16
2.3 2.4 2.5 2.65593 G20
2.7 2.8
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.2
40
ISOL
ATIO
N (d
B)
44
48
52
56
60
2.3 2.4 2.5 2.65593 G21
2.7 2.8
105°C85°C25°C–40°C
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
8
12
14
16
2
24
5593 G22
10
–2–4 40 6
18
20
22
2
4
8
10
12
20
IIP3
NF
6
14
16
1885°C25°C–40°C
GC
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
8
12
14
16
2
24
5593 G23
10
–2–4 40 6
18
20
22
2
4
8
10
12
20
IIP3
NF
6
14
16
18
85°C25°C–40°C
GC
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
8
12
14
16
2
24
5593 G24
10
–2–4 40 6
18
20
22
2
4
8
10
12
20
IIP3
6
14
16
18
85°C25°C–40°C
GC
NF
VCC, VCCIF SUPPLY VOLTAGE (V)3.0
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
8
12
14
16
3.4
24
5593 G25
10
3.23.1 3.53.3 3.6
18
20
22
2
4
8
10
12
20
IIP3
6
14
16
18
85°C25°C–40°C
GC
NF
RF = 2500MHzVCC = VCCIF
CASE TEMPERATURE (°C)–40
G C (d
B), I
IP3
(dBm
), P1
dB (d
Bm)
18
22
26
805593 G26
14
10
16
20
24
12
8
6–10–25 205 50 65 9535 110
VCCIF = 5VVCCIF = 3.3V
RF = 2500MHz
IIP3
P1dB
GC
RF, LO FREQUENCY (GHz)2.1
LO L
EAKA
GE (d
Bm) RF ISOLATION (dB)
–20
–10
0 70
2.4 2.65593 G27
–30
–40
2.2 2.3 2.5 2.7 2.8
–50
–60
50
60
40
30
20
10
RF-LO
LO-RF
RF-IF
LO-IF
LTC5593
105593f
TYPICAL AC PERFORMANCE CHARACTERISTICS2.3GHz to 2.7GHz, high side LO. VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, ISEL = low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain and IIP3 vs RF Frequency SSB NF vs RF Frequency
Channel Isolation vs RF Frequency
RF FREQUENCY (GHz)2.2
16
IIP3
(dBm
) GC (dB)
18
20
22
24
28
IIP3
2.3 2.4 2.5 2.65593 G28
2.7 2.8
26
5
7
9
11
13
17
15
105°C85°C25°C–40°C
GC
RF FREQUENCY (GHz)2.2
6
SSB
NF (d
B)
8
10
12
14
16
2.3 2.4 2.5 2.65593 G29
2.7 2.8
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.2
40
ISOL
ATIO
N (d
B)
47
54
61
68
2.3 2.4 2.5 2.65593 G30
2.7 2.8
105°C85°C25°C–40°C
2300MHz Conversion Gain, IIP3 and NF vs LO Power
2500MHz Conversion Gain, IIP3 and NF vs LO Power
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
10
14
18
22
–2 2–4 0 4
5593 G31
6
26
8
12
16
20
24
28
0
4
8
12
16
20
2
6
10
14
18
22
IIP3
NF
85°C25°C–40°C
GC
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
10
14
18
22
–2 2–4 0 4
5593 G32
6
26
8
12
16
20
24
28
0
4
8
12
16
20
2
6
10
14
18
22
IIP385°C25°C–40°C
GC
NF
2700MHz Conversion Gain, IIP3 and NF vs LO Power
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
10
14
18
22
–2 2–4 0 4
5593 G33
6
26
8
12
16
20
24
28
0
4
8
12
16
20
2
6
10
14
18
22
85°C25°C–40°C
GC
NF
IIP3
Conversion Gain, IIP3 and RF Input P1dB vs Temperature
Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)
RF Isolation and LO Leakage vs Frequency
VCC, VCCIF SUPPLY VOLTAGE (V)3.0
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
10
14
18
3.1 3.2 3.3 3.4
5593 G34
3.5
22
26
8
12
16
20
24 IIP3
0
4
8
12
16
20
2
6
10
14
18
3.6
85°C25°C–40°C
NF
GC
RF = 2500MHzVCC = VCCIF
CASE TEMPERATURE (°C)–40
G C (d
B), I
IP3
(dBm
), P1
dB (d
Bm)
18
22
26
80
5593 G35
14
10
16
20
24
12
8
6–10–25 205 50 65 9535 110
VCCIF = 5VVCCIF = 3.3V
RF = 2500MHz
IIP3
P1dB
GC
RF, LO FREQUENCY (GHz)2.1
LO L
EAKA
GE (d
Bm) RF ISOLATION (dB)
–20
–10
0 70
2.4 2.6
5593 G36
–30
–40
2.2 2.3 2.5 2.7 2.8
–50
–60
50
60
40
30
20
10
RF-LO
LO-RF
RF-IF
LO-IF
LTC5593
115593f
TYPICAL AC PERFORMANCE CHARACTERISTICS2.3GHz to 2.7GHz, high side LO, ISEL = high (low power mode). VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
2700MHz Conversion Gain, IIP3 and NF vs LO Power
Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)
SSB NF vs RF FrequencyConversion Gain and IIP3 vs RF Frequency
Channel Isolation vs RF Frequency
2300MHz Conversion Gain, IIP3 and NF vs LO Power
2500MHz Conversion Gain, IIP3 and NF vs LO Power
RF FREQUENCY (GHz)2.2
13
IIP3
(dBm
) GC (dB)
15
17
19
21
23
5
7
9
11
13
IIP3
GC
15
2.3 2.4 2.5 2.6
5593 G37
2.7 2.8
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.2
6
SSB
NF (d
B)
8
10
12
14
16
2.3 2.4 2.5 2.6
5593 G38
2.7 2.8
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.2
40
ISOL
ATIO
N (d
B)
47
54
68
61
2.3 2.4 2.5 2.6
5593 G39
2.7 2.8
105°C85°C25°C–40°C
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
8
12
14
16
2
24
5593 G40
10
–2–4 40 6
18
20
22
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°C
GC
IIP3
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
8
12
14
16
2
24
5593 G41
10
–2–4 40 6
18
20
22
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°CGC
IIP3
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
8
12
14
16
2
24
5593 G42
10
–2–4 40 6
18
20
22
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°CGC
IIP3
VCC, VCCIF SUPPLY VOLTAGE (V)3.0
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
8
12
14
16
3.4
24
5593 G43
10
3.23.1 3.53.3 3.6
18
20
22
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°CGC
IIP3
RF = 2500MHzVCC = VCCIF
Conversion Gain, IIP3 and RF Input P1dB vs Temperature
RF Isolation and LO Leakage vs Frequency
CASE TEMPERATURE (°C)–40
G C (d
B), I
IP3
(dBm
), P1
dB (d
Bm)
18
22
26
805593 G44
14
10
16
20
24
12
8
6–10–25 205 50 65 9535 110
VCCIF = 5VVCCIF = 3.3V
RF = 2500MHz
IIP3
P1dB
GC
RF, LO FREQUENCY (GHz)2.1
LO L
EAKA
GE (d
Bm) RF ISOLATION (dB)
–20
–10
0 70
2.4 2.6
5593 G45
–30
–40
2.2 2.3 2.5 2.7 2.8
–50
–60
50
60
40
30
20
10
RF-LO
LO-RF
RF-IF
LO-IF
LTC5593
125593f
TYPICAL AC PERFORMANCE CHARACTERISTICS2.7GHz to 4GHz, low side LO. VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, ISEL = low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
SSB NF vs RF FrequencyConversion Gain and IIP3 vs RF Frequency
Channel Isolation vs RF Frequency
3200MHz Conversion Gain, IIP3 and NF vs LO Power
3500MHz Conversion Gain, IIP3 and NF vs LO Power
RF FREQUENCY (GHz)2.6 2.8
18
IIP3
(dBm
) GC (dB)
22
28
IIP3
GC
3.0 3.4 3.65593 G46
20
26
24
6
10
16
8
14
12
3.2 3.8 4.0
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.6 2.8
6
SSB
NF (d
B)
10
16
3.0 3.4 3.65593 G47
8
14
12
3.2 3.8 4.0
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.6 2.8
40
ISOL
ATIO
N (d
B)
44
50
3.0 3.4 3.65593 G48
42
48
46
3.2 3.8 4.0
105°C85°C25°C–40°C
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
10
14
18
22
–2 2–4 0 45593 G49
6
26
8
12
16
20
24
28
0
4
8
12
16
20
2
6
10
14
18
22IIP3
NF
85°C25°C–40°C
GC
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
10
14
18
22
–2 2–4 0 45593 G50
6
26
8
12
16
20
24
28
0
4
8
12
16
20
2
6
10
14
18
22IIP3
NF
85°C25°C–40°C
GC
3800MHz Conversion Gain, IIP3 and NF vs LO Power
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
10
14
18
22
–2 2–4 0 45593 G51
6
26
8
12
16
20
24
28
0
4
8
12
16
20
2
6
10
14
18
22IIP3
85°C25°C–40°C
GC
NF
Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)
VCC, VCCIF SUPPLY VOLTAGE (V)3.0
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
10
14
18
22
3.2 3.43.1 3.3 3.55593 G52
3.6
26
8
12
16
20
24
28
0
4
8
12
16
20
2
6
10
14
18
22IIP3
85°C25°C–40°C
GC
NF
RF = 3500MHzVCC = VCCIF
Conversion Gain, IIP3 and RF Input P1dB vs Temperature
RF Isolation and LO Leakage vs Frequency
CASE TEMPERATURE (°C)–40 –25
G C (d
B), I
IP3
(dBm
), P1
dB (d
Bm)
12
24
26
28
5 50 65 805593 G53
8
20
16
10
22
6
18
14
–10 20 35 95 110
VCCIF = 5VVCCIF = 3.3V
RF = 2500MHz
IIP3
P1dB
GC
RF, LO FREQUENCY (GHz)2.6
LO L
EAKA
GE (d
Bm) RF ISOLATION (dB)
–20
–10
0 70
3.2 3.65593 G54
–30
–40
2.8 3.0 3.4 3.8 4.0
–50
–60
50
60
40
30
20
10
RF-LO
LO-RF
RF-IF
LO-IF
LTC5593
135593f
TYPICAL AC PERFORMANCE CHARACTERISTICS2.7GHz to 4GHz, low side LO, ISEL = high (low power mode). VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
SSB NF vs RF FrequencyConversion Gain and IIP3 vs RF Frequency
Channel Isolation vs RF Frequency
RF FREQUENCY (GHz)2.6 2.8
14
IIP3
(dBm
) GC (dB)
18
24
IIP3
GC
3.0 3.4 3.65593 G55
16
22
20
4
8
14
6
12
10
3.2 3.8 4.0
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.6 2.8
6
SSB
NF (d
B)
10
16
3.0 3.4 3.65593 G56
8
14
12
3.2 3.8 4.0
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.6 2.8
40
ISOL
ATIO
N (d
B)
44
50
3.0 3.4 3.65593 G57
42
48
46
3.2 3.8 4.0
105°C85°C25°C–40°C
3200MHz Conversion Gain, IIP3 and NF vs LO Power
3800MHz Conversion Gain, IIP3 and NF vs LO Power
Conversion Gain, IIP3 and RF Input P1dB vs Temperature
3500MHz Conversion Gain, IIP3 and NF vs LO Power
Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)
RF Isolation and LO Leakage vs Frequency
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
8
12
14
16
2
24
5593 G58
10
–2–4 40 6
18
20
22
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°C
IIP3
GC
LO INPUT POWER (dBm)–6
5
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
7
11
13
15
2
23
5593 G59
9
–2–4 40 6
17
19
21
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°C
IIP3
GC
LO INPUT POWER (dBm)–6
6
4
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
8
12
14
16
2
5593 G60
10
–2–4 40 6
18
20
22
2
4
8
10
12
20
6
14
16
18
85°C25°C–40°C
IIP3
GC
NF
VCC, VCCIF SUPPLY VOLTAGE (V)3.0
5
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
7
11
13
15
3.4
23
5593 G61
9
3.23.1 3.53.3 3.6
17
19
21
2
4
8
10
12
20
6
14
16
18
85°C25°C–40°C
IIP3
GC
NF
RF = 3500MHzVCC = VCCIF
CASE TEMPERATURE (°C)–40
G C (d
B), I
IP3
(dBm
), P1
dB (d
Bm)
17
21
25
80
5593 G62
13
9
15
19
23
11
7
5–10–25 205 50 65 9535 110
VCCIF = 5VVCCIF = 3.3V
RF = 3500MHz
IIP3
P1dB
GC
RF, LO FREQUENCY (GHz)2.6
LO L
EAKA
GE (d
Bm) RF ISOLATION (dB)
–20
–10
0 70
3.2 3.6
5593 G63
–30
–40
2.8 3.0 3.4 3.8 4.0
–50
–60
50
60
40
30
20
10
RF-LO
LO-RF
RF-IF
LO-IF
LTC5593
145593f
TYPICAL AC PERFORMANCE CHARACTERISTICS2.7GHz to 4GHz, high side LO. VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, ISEL = low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
3800MHz Conversion Gain, IIP3 and NF vs LO Power
Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)
SSB NF vs RF FrequencyConversion Gain and IIP3 vs RF Frequency
Channel Isolation vs RF Frequency
3200MHz Conversion Gain, IIP3 and NF vs LO Power
3500MHz Conversion Gain, IIP3 and NF vs LO Power
RF FREQUENCY (GHz)2.6 2.8
18
IIP3
(dBm
) GC (dB)
22
28
IIP3
GC
3.0 3.4 3.6
5593 G64
20
26
24
6
10
16
8
14
12
3.2 3.8 4.0
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.6 2.8
6
SSB
NF (d
B)
10
16
3.0 3.4 3.6
5593 G65
8
14
12
3.2 3.8 4.0
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.6 2.8
40
ISOL
ATIO
N (d
B)
46
55
3.0 3.4 3.6
5593 G66
43
52
49
3.2 3.8 4.0
105°C85°C25°C–40°C
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
10
14
18
–4 –2 0 2
5593 G67
4
22
26
8
12
16
20
24IIP3
0
4
8
12
16
20
2
6
10
14
18
6
85°C25°C–40°C
NF
GC
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
10
14
18
–4 –2 0 2
5593 G68
4
22
26
8
12
16
20
24IIP3
0
4
8
12
16
20
2
6
10
14
18
6
85°C25°C–40°C
GC
NF
LO INPUT POWER (dBm)–6
6
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
10
14
18
–4 –2 0 2
5593 G69
4
22
26
8
12
16
20
24IIP3
0
4
8
12
16
20
2
6
10
14
18
6
85°C25°C–40°C
NF
GC
VCC, VCCIF SUPPLY VOLTAGE (V)3.0
5
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
9
13
17
3.1 3.2 3.3 3.4
5593 G70
3.5
21
25
7
11
15
19
23IIP3
0
4
8
12
16
20
2
6
10
14
18
3.6
85°C25°C–40°C
NF
GC
RF = 3500MHzVCC = VCCIF
RF, LO FREQUENCY (GHz)2.6
LO L
EAKA
GE (d
Bm) RF ISOLATION (dB)
–20
–10
0 70
3.2 3.6
5593 G72
–30
–40
2.8 3.0 3.4 3.8 4.0
–50
–60
50
60
40
30
20
10
RF-LO
LO-RF
RF-IF
LO-IF
Conversion Gain, IIP3 and RF Input P1dB vs Temperature
RF Isolation and LO Leakage vs Frequency
CASE TEMPERATURE (°C)–40
G C (d
B), I
IP3
(dBm
), P1
dB (d
Bm)
17
21
27
25
805593 G71
13
9
15
19
23
11
7
5–10–25 205 50 65 9535 110
VCCIF = 5VVCCIF = 3.3V
RF = 3500MHz
IIP3
P1dB
GC
LTC5593
155593f
TYPICAL AC PERFORMANCE CHARACTERISTICS2.7GHz to 4GHz, high side LO, ISEL = high (low power mode). VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
SSB NF vs RF FrequencyConversion Gain and IIP3 vs RF Frequency
Channel Isolation vs RF Frequency
3200MHz Conversion Gain, IIP3 and NF vs LO Power
3500MHz Conversion Gain, IIP3 and NF vs LO Power
RF FREQUENCY (GHz)2.6 2.8
14
IIP3
(dBm
) GC (dB)
18
24
IIP3
GC
3.0 3.4 3.65593 G73
16
22
20
4
8
14
6
12
10
3.2 3.8 4.0
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.6 2.8
6
SSB
NF (d
B)10
16
3.0 3.4 3.65593 G74
8
14
12
3.2 3.8 4.0
105°C85°C25°C–40°C
RF FREQUENCY (GHz)2.6 2.8
40
ISOL
ATIO
N (d
B)
46
55
3.0 3.4 3.65593 G75
43
52
49
3.2 3.8 4.0
105°C85°C25°C–40°C
LO INPUT POWER (dBm)–6
5
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
7
11
13
15
2
23
5593 G76
9
–2–4 40 6
17
19
21
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°C
IIP3
GC
LO INPUT POWER (dBm)–6
4
G C (d
B), I
IP3
(dBm
)SSB NF (dB)
6
10
12
14
2
22
5593 G77
8
–2–4 40 6
16
18
20
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°C
IIP3
GC
3800MHz Conversion Gain, IIP3 and NF vs LO Power
Conversion Gain, IIP3 and RF Input P1dB vs Temperature
Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply)
RF Isolation and LO Leakage vs Frequency
LO INPUT POWER (dBm)–6
4
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
6
10
12
14
2
22
5593 G78
8
–2–4 40 6
16
18
20
2
4
8
10
12
20
NF
6
14
16
18
85°C25°C–40°C
IIP3
GC
VCC, VCCIF SUPPLY VOLTAGE (V)3.0
4
G C (d
B), I
IP3
(dBm
)
SSB NF (dB)
6
10
12
14
3.4
22
5593 G79
8
3.23.1 3.53.3 3.6
16
18
20
2
4
8
10
12
20
6
14
16
18
85°C25°C–40°C
IIP3
NF
RF = 3500MHzVCC = VCCIF
GC
CASE TEMPERATURE (°C)–40
G C (d
B), I
IP3
(dBm
), P1
dB (d
Bm)
16
20
24
805593 G80
12
8
14
18
22
10
6
4–10–25 205 50 65 9535 110
VCCIF = 5VVCCIF = 3.3V
RF = 3500MHz
IIP3
P1dB
GC
RF, LO FREQUENCY (GHz)2.6
LO L
EAKA
GE (d
Bm) RF ISOLATION (dB)
–20
–10
0 70
3.2 3.65593 G81
–30
–40
2.8 3.0 3.4 3.8 4.0
–50
–60
50
60
40
30
20
10
RF-LO
LO-RF
RF-IF
LO-IF
LTC5593
165593f
TYPICAL DC PERFORMANCE CHARACTERISTICSISEL = low, ENA = ENB = high, test circuit shown in Figure 1
ISEL = high (low power mode), ENA = ENB = high, test circuit shown in Figure 1
VCC Supply Current vs Supply Voltage (Mixer and LO Amplifier)
VCC Supply Current vs Supply Voltage (Mixer and LO Amplifier)
VCCIF Supply Current vs Supply Voltage (IF Amplifier)
VCCIF Supply Current vs Supply Voltage (IF Amplifier)
Total Supply Current vs Temperature (VCC + VCCIF)
Total Supply Current vs Temperature (VCC + VCCIF)
VCC SUPPLY VOLTAGE (V)3.0
184
SUPP
LY C
URRE
NT (m
A)
188
192
196
3.1 3.2 3.3 3.4
5593 G82
3.5
200
204
186
190
194
198
202
3.6
105°C85°C25°C–40°C
VCCIF SUPPLY VOLTAGE (V)3.0
140
SUPP
LY C
URRE
NT (m
A)
160
180
200
220
3.6 4.2 4.8 5.4
5593 G83
240
260
3.3 3.9 4.5 5.1
105°C
85°C
25°C
–40°C
TEMPERATURE (°C)
340
SUPP
LY C
URRE
NT (m
A)
380
420
460
360
400
440
–10 20 50 80
5593 G84
110–25–40 5 35 65 95
VCC = 3.3V,VCCIF = 5V
(DUAL SUPPLY)
VCC = VCCIF = 3.3V(SINGLE SUPPLY)
VCC SUPPLY VOLTAGE (V)3.0
120
SUPP
LY C
URRE
NT (m
A)
124
128
3.1 3.2 3.3 3.4
5593 G85
3.5
134
122
126
130
132
3.6
105°C85°C25°C–40°C
VCCIF SUPPLY VOLTAGE (V)3.0
80
SUPP
LY C
URRE
NT (m
A)
100
120
3.6 4.2 4.8 5.4
5593 G86
140
160
3.3 3.9 4.5 5.1
105°C
85°C
25°C
–40°C
TEMPERATURE (°C)
200
SUPP
LY C
URRE
NT (m
A)
240
300
220
260
280
–10 20 50 80
5593 G87
110–25–40 5 35 65 95
VCC = 3.3V,VCCIF = 5V
(DUAL SUPPLY)
VCC = VCCIF = 3.3V(SINGLE SUPPLY)
LTC5593
175593f
PIN FUNCTIONSRFA, RFB (Pins 1, 6): Single-Ended RF Inputs for Chan-nels A and B. These pins are internally connected to the primary sides of the RF input transformers, which have low DC resistance to ground. Series DC-blocking capaci-tors should be used to avoid damage to the integrated transformer when DC voltage is present at the RF inputs. The RF inputs are impedance matched when the LO input is driven with a 0±6dBm source between 2.1GHz and 4.2GHz and the channels are enabled.
CTA, CTB (Pins 2, 5): RF Transformer Secondary Center-Tap on Channels A and B. These pins may require bypass capacitors to ground to optimize IIP3 performance. Each pin has an internally generated bias voltage of 1.2V and must be DC-isolated from ground and VCC.
GND (Pins 3, 4, 7, 13, 15, 24, Exposed Pad Pin 25): Ground. These pins must be soldered to the RF ground plane on the circuit board. The exposed pad metal of the package provides both electrical contact to ground and good thermal contact to the printed circuit board.
IFGNDB, IFGNDA (Pins 8, 23): DC Ground Returns for the IF Amplifiers. These pins must be connected to ground to complete the DC current paths for the IF amplifiers. Chip inductors may be used to tune LO-IF and RF-IF leakage. Typical DC current is 100mA for each pin.
IFB+, IFB–, IFA–, IFA+ (Pins 9, 10, 21, 22): Open-Collec-tor Differential Outputs for the IF Amplifiers of Channels B and A. These pins must be connected to a DC supply through impedance matching inductors, or transformer center-taps. Typical DC current consumption is 50mA into each pin.
IFBB, IFBA (Pins 11, 20): Bias Adjust Pins for the IF Amplifiers. These pins allow independent adjustment of the internal IF buffer currents for channels B and A, respectively. The typical DC voltage on these pins is 2.2V. If not used, these pins must be DC isolated from ground and VCC.
VCCB and VCCA (Pins 12, 19): Power Supply Pins for the LO Buffers and Bias Circuits. These pins must be con-nected to a regulated 3.3V supply with bypass capacitors located close to the pins. Typical current consumption is 98mA per pin.
ENB, ENA (Pins 14, 17): Enable Pins. These pins allow Channels B and A, respectively, to be independently en-abled. An applied voltage of greater than 2.5V activates the associated channel while a voltage of less than 0.3V disables the channel. Typical input current is less than 10μA. These pins must not be allowed to float.
LO (Pin 16): Single-Ended Local Oscillator Input. This pin is internally connected to the primary side of the LO input transformer and has a low DC resistance to ground. Series DC-blocking capacitors should be used to avoid damage to the integrated transformer when DC voltage is present at the LO input. The LO input is internally matched to 50Ω for all states of ENA and ENB.
ISEL (Pin 18): Low Power Select Pin. When this pin is pulled low (<0.3V), both mixer channels are biased at the normal current level for best RF performance. When greater than 2.5V is applied, both channels operate at reduced current, which provides reasonable performance at lower power consumption. This pin must not be allowed to float.
LTC5593
185593f
BLOCK DIAGRAM
5593 BD
BIAS
BIAS
GND
ENA
ISEL
LO
VCCBIFBB
VCCAIFBA
IFB–IFB+
IFA–IFA+
IFGNDB
IFGNDA
GND
RFB
LOAMP
LOAMP
ENB
GND
IFAMP
11109 12
14
13
GND 15
16
17
18
6
87
CTB5
GND4
GND3
CTA2
RFA1
IFAMP
22 21 20 192324
LTC5593
195593f
TEST CIRCUIT
RF
GND
GND
BIAS
DC1710AEVALUATION BOARDSTACK-UP(NELCO N4000-13)
0.015”
0.015”
0.062”
4:1T1A
IFA50Ω
C7A
L2AL1A
C5A
R2A
C6
C3A C4
LTC55931
192021222324
121110987
LO50Ω
17
18
16
15
14
C2
5
6 13
4
3
RFA50Ω
VCCIF3.3V TO 5V
C1A
RFB50Ω
C1B
2
IFGNDAGND IFA+ IFA– IFBA
LO
GND
GND
ISEL
ENB
ENA
VCCA
IFGNDBGND IFB+ IFB– IFBB VCCB
RFA
CTA
GND
GND
CTB
RFB
5593 F01
4:1T1B
IFB50Ω
C5BC3B
C8A
C8B
C7B
L1BL2B
ISEL(0V/3.3V)
VCC3.3V
ENA(0V/3.3V)
ENB(0V/3.3V)
R2B
25GND
L1, L2 vs IF FREQUENCIES
IF (MHz) L1A, L1B, L2A, L2B (nH)
140 270
190 150
240 100
300 56
380 33
470 22
REF DES VALUE SIZE VENDOR
C1A, C1B, C3A, C3B C5A, C5B
22pF 0402 AVX
C2 1.5pF 0402 AVX
C8A, C8B 10pF 0402 AVX
C4, C6 1µF 0603 AVX
C7A, C7B 1000pF 0402 AVX
L1A, L1B L2A, L2B
150nH 0603 Coilcraft
T1A, T1B (Alternate)
TC4-1W-7ALN+ (WBC4-6TLB)
Mini-Circuits (Coilcraft)
R2 vs RF and LO Frequencies
RF (MHz) LO R2A, R2B
2300 to 2700 Low Side 953Ω
High Side 3.01kΩ
2700 to 4000 Low Side Open
High Side Open
Figure 1. Standard Test Circuit Schematic (190MHz IF)
LTC5593
205593f
Introduction
The LTC5593 consists of two identical mixer channels driven by a common LO input signal. Each high linearity mixer consists of a passive double-balanced mixer core, IF buffer amplifier, LO buffer amplifier and bias/enable circuits. See the Pin Functions and Block Diagram sections for a description of each pin. Each of the mixers can be shutdown independently to reduce power consumption and low current mode can be selected that allows a trade-off between performance and power consumption. The RF and LO inputs are single-ended and are internally matched to 50Ω. low side or high side LO injection can be used. The IF outputs are differential. The evaluation circuit, shown in Figure 1, utilizes bandpass IF output matching and an IF transformer to realize a 50Ω single-ended IF output. The evaluation board layout is shown in Figure 2.
APPLICATIONS INFORMATION
Figure 2. Evaluation Board Layout
RF Inputs
The RF inputs of channels A and B are identical. The RF input of channel A, shown in Figure 3, is connected to the primary winding of an integrated transformer. A 50Ω match is realized when a series external capacitor, C1A, is con-nected to the RF input. C1A is also needed for DC blocking if the source has DC voltage present, since the primary side of the RF transformer is internally DC-grounded. The DC resistance of the primary is approximately 3.6Ω.
The secondary winding of the RF transformer is inter-nally connected to the channel A passive mixer core. The center-tap of the transformer secondary is connected to Pin 2 (CTA) to allow the connection of bypass capacitor, C8A. The value of C8A can be adjusted to improve the
Figure 3. Channel A RF Input Schematic
LTC5593
C1A
C8A
RFA
CTA
RFA
TO CHANNEL A MIXER
1
2
5593 F03
LTC5593
215593f
Figure 4. Channel-to-Channel Isolation vs C8 Values
RF FREQUENCY (GHz)2.2
30
CHAN
NEL
ISOL
ATIO
N (d
B)
40
45
50
2.4 2.6 2.7
5593 F04
35
2.3 2.5 2.8
55
C8 OPENC8 = 2.2pFC8 = 10pF
channel-to-channel isolation at specific RF operation frequency with minor impact to conversion gain, linearity and noise performance. The channel-to-channel isola-tion performance with different values of C8A is given in Figure 4. When used, it should be located within 2mm of Pin 2 for proper high frequency decoupling. The nominal DC voltage on the CTA pin is 1.2V.
APPLICATIONS INFORMATION
Figure 6. LO Input Schematic
The RF input impedance and input reflection coefficient, versus RF frequency, are listed in Table 1. The reference plane for this data is Pin 1 of the IC, with no external matching, and the LO is driven at 2.31GHz.
Table 1. RF Input Impedance and S11 (at Pin1, No External Matching, LO Input Driven at 2.31GHz)
FREQUENCY (GHZ)
RF INPUT IMPEDANCE
S11
MAG ANGLE
2.0 74.2 + j13.6 0.22 23.1
2.2 69.4 – j6.4 0.17 –15.2
2.4 45.2 – j3.0 0.06 –146.0
2.6 45.6 + j6.5 0.08 120.3
2.8 48.3 + j10.9 0.11 92.3
3.0 51.5 + j14.1 0.14 75.9
3.2 57.1 + j15.5 0.16 57.3
3.4 62.6 + j11.8 0.15 37.2
3.6 64.3 + j4.7 0.13 16.0
3.8 63.6 – j6.8 0.13 –23.2
4.0 50.8 – j10.7 0.11 –79.4
LO Input
The LO input, shown in Figure 6, is connected to the pri-mary winding of an integrated transformer. A 50Ω imped-ance match from 2.1GHz to 3.4GHz is realized at the LO port by adding a 1.5pF external series capacitor, C2. This capacitor is also needed for DC blocking if the LO source has DC voltage present, since the primary side of the LO transformer is DC-grounded internally. The DC resistance of the primary is approximately 1.8Ω. For LO frequency
Figure 5. RF Port Return Loss
RF FREQUENCY (GHz)2.0
30
RF P
ORT
RETU
RN L
OSS
(dB)
15
20
10
5
2.4 3.0 3.2 3.4 3.6 3.82.8
5593 F05
25
2.2 2.6 4.0
0LO = 2.4GHzLO = 3GHzLO = 3.6GHz
LO
L4
TOMIXER B
LTC5593ISEL
5593 F06
18
LO16
17ENA
ENB
C2
14
BIAS
BIAS
TOMIXER A
For the RF inputs to be properly matched, the appropriate LO signal must be applied to the LO input. A broadband input match is realized with C1A = 22pF. The measured input return loss is shown in Figure 5 for LO frequencies of 2.4GHz, 3.0GHz and 3.6GHz. These LO frequencies correspond to lower, middle and upper values in the LO range. As shown in Figure 5, the RF input impedance is dependent on LO frequency, although a single value of C1A is adequate to cover the 2.3GHz to 4.0GHz RF band.
LTC5593
225593f
Figure 7. LO Input Return Loss
APPLICATIONS INFORMATIONfrom 3.4GHz to 3.8GHz, the LO port can be well matched by using C2 = 0.6pF and L4 = 10nH.
The secondary of the transformer drives a pair of high speed limiting differential amplifiers for channels A and B. The LTC5593’s LO amplifiers are optimized for the 2.1GHz to 4.2GHz LO frequency range; however, LO frequencies outside this frequency range may be used with degraded performance.
The LO port is always 50Ω matched, even when one or both of the channels is disabled. This helps to reduce fre-quency pulling of the LO source when the mixer is switched between different operating states. Figure 7 illustrates the LO port return loss for the different operating modes.
The nominal LO input level is 0dBm, though the limiting amplifiers will deliver excellent performance over a ±6dBm input power range. Table 2 lists the LO input impedance and input reflection coefficient versus frequency.
Table 2. LO Input Impedance vs Frequency (at Pin 16, No External Matching, ENA = ENB = High)
FREQUENCY (GHz)
INPUT IMPEDANCE
S11
MAG ANGLE
2.0 33.8 + j22.8 0.32 110.3
2.2 34.8 + j22.2 0.31 109.7
2.4 34.5 + j21.8 0.31 110.9
2.6 32.5 + j22.8 0.34 111.9
2.8 30.7 + j25.9 0.38 108.8
3.0 29.6 + j30.1 0.43 103.4
3.2 29.3 + j34.8 0.47 97.1
3.4 29.3 + j38.7 0.50 92.1
3.6 30.7 + j43.1 0.52 86.0
3.8 33.0 + j46.9 0.52 80.5
4.0 36.1 + j49.8 0.52 75.6
LO FREQUENCY (GHz)2.0
35
LO P
ORT
RETU
RN L
OSS
(dB)
30
20
15
10
0
2.2 3.0 3.4
5593 F07
25
5
2.8 3.8 4.02.4 2.6 3.2 3.6
BOTH CHANNELS ONONE CHANNEL ONBOTH CHANNELS OFF
C2 = 1.5pFL4 = OPEN
C2 = 0.6pFL4 = 10nH
IF Outputs
The IF amplifiers in channels A and B are identical. The IF amplifier for channel A, shown in Figure 8, has differen-tial open collector outputs (IFA+ and IFA–), a DC ground return pin (IFGNDA), and a pin for adjusting the internal bias (IFBA). The IF outputs must be biased at the sup-ply voltage (VCCIFA), which is applied through matching inductors L1A and L2A. Alternatively, the IF outputs can be biased through the center tap of a transformer (T1A). The common node of L1A and L2A can be connected to the center tap of the transformer. Each IF output pin draws approximately 50mA of DC supply current (100mA total). An external load resistor, R2A, can be used to improve impedance matching if desired.
IFGNDA (Pin 23) must be grounded or the amplifier will not draw DC current. Inductor L3A may improve LO-IF and RF-IF leakage performance in some applications, but is otherwise not necessary. Inductors should have small resistance for DC. High DC resistance in L3A will reduce the IF amplifier supply current, which will degrade RF performance.
LTC5593
235593f
Figure 8. IF Amplifier Schematic with Bandpass Match
4:1T1A IFA
C7AL2AL1A
C5A
R2A
L3A (OR SHORT)VCCIFA
20212223
IFAMP
BIAS
100mA
4mA
IFBA
VCCA
LTC5593
IGNDAIFA–IFA+
R1A(OPTION TO
REDUCEDC POWER)
5593 F08
Figure 9. IF Output Small-Signal Model
22 21IFA+ IFA–
0.9nH0.9nHRIF
CIF
LTC5593
5593 F09
APPLICATIONS INFORMATION
For optimum single-ended performance, the differential IF output must be combined through an external IF transformer or a discrete IF balun circuit. The evaluation board (see Figures 1 and 2) uses a 4:1 IF transformer for impedance transformation and differential to single-ended conversion. It is also possible to eliminate the IF transformer and drive differential filters or amplifiers directly.
The IF output impedance can be modeled as 260Ω in parallel with 2.3pF. The equivalent small-signal model, including bondwire inductance, is shown in Figure 9. Frequency-dependent differential IF output impedance is listed in Table 3. This data is referenced to the package pins (with no external components) and includes the ef-fects of IC and package parasitics.
Bandpass IF Matching
The bandpass IF matching configuration, shown in Figures 1 and 8, is best suited for IF frequencies in the 90MHz to 600MHz range. Resistor R2A may be used to
reduce the IF output resistance for greater bandwidth and inductors L1A and L2A resonate with the internal IF output capacitance at the desired IF frequency. The value of L1A, L2A can be estimated as follows:
L1A =L2A = 12πfIF( )2 • 2 •CIF
where CIF is the internal IF capacitance (listed in Table 3).
LTC5593
245593f
Figure 12. IF Output with Lowpass Matching
APPLICATIONS INFORMATIONTable 3. IF Output Impedance vs Frequency
FREQUENCY (MHz)
DIFFERENTIAL OUTPUT IMPEDANCE (RIF || XIF (CIF))
90 291 || –j714 (2.5pF)140 282 || –j463 (2.5pF)190 274 || –j353 (2.4pF)240 265 || –j278 (2.4pF)300 252 || –j225 (2.4pF)380 231 || –j177 (2.4pF)500 227 || –j127 (2.5pF)
Values of L1A and L2A are tabulated in Figure 1 for vari-ous IF frequencies. The measured IF output return loss for bandpass IF matching is plotted in Figure 10.
Performances of 470MHz IF output frequency with low side LO injection using bandpass IF matching is shown in Figure 11. The test circuit schematic and components values are shown in Figure 1 with R2 open in this example. The test conditions are: VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = high, ISEL = low, TC = 25°C.
Lowpass IF Matching
For IF frequencies below 90MHz, the inductance values become unreasonably high and the lowpass topology shown in Figure 12 is preferred. This topology also can provide improved RF to IF and LO to IF isolation. VCCIFA is supplied through the center tap of the 4:1 transformer. A lowpass impedance transformation is realized by shunt
4:1
T1A IFA50Ω
VCCIFA3.1 TO 5.3V
C5A
2122IFA–IFA+
C6
C9A
R2AL1A L2A
LTC5593
5593 F12
Figure 11. Performances of 470MHz IF Using Bandpass Matching
RF FREQUENCY (MHz)2.2
G C (d
B), I
IP3
(dBm
)
CHANNEL ISOLATION (dB)
17
23
25
3.8
5593 F11
1513
52.6 3.0 3.42.4 2.8 3.2 3.6
9
29
IIP327
21
19
11
7
44
50
52
4240
32
36
5654
48
46
38
34
C8 = OPENC8 = 10pF
GC
CHANNELISOLATION
Figure 10. IF Output Return Loss with Bandpass Matching
IF FREQUENCY (MHz)100
IF P
ORT
RETU
RN L
OSS
(dB)
150 250 300 350 400 450 500 550 600
5593 F10
200
5
10
15
20
25
30
L1, L2150nH
L1, L256nH
L1, L233nH
L1, L222nH
LTC5593
255593f
Figure 13. IF Output Return Loss with Lowpass Matching
IF FREQUENCY (MHz)
IF P
ORT
RETU
RN L
OSS
(dB)
90 170 210 250
5591 F13
13050
0
5
10
15
20
25
30
L1, L247nH
L1, L2150nH
L1, L282nH
APPLICATIONS INFORMATIONelements R2A and C9A (in parallel with the internal RIF and CIF), and series inductors L1A and L2A. Resistor R2A is used to reduce the IF output resistance for greater band-width, or it can be deleted for the highest conversion gain. The final impedance transformation to 50Ω is realized by transformer T1A. The measured IF output return loss for lowpass IF matching with R2A and C9A open is plotted in Figure 13. The LTC5593 demo board (see Figure 2) has been laid out to accommodate this matching topology with only minor modifications.
VCCIF values of 3.3V and 5V. For the highest conversion gain, high-Q wire-wound chip inductors are recommended for L1A and L2A, especially when using VCCIF = 3.3V. low cost multilayer chip inductors may be substituted, with a slight reduction in conversion gain.
Table 4. Performance Comparison with VCCIF = 3.3V and 5V (RF = 2500MHz, Low Side LO, IF = 190MHz, ENA = ENB = High)
VCCIF (V)
R2A (Ω)
ICCIF (mA)
GC (dB)
P1dB (dBm)
IIP3 (dBm)
NF (dB)
3.3953 200 8.5 10.4 27.7 9.5
Open 200 9.6 9.6 27.2 9.5
5953 207 8.4 13.7 28.5 9.7
Open 207 9.5 13.3 27.4 9.7
The IFBA pin (Pin 20) is available for reducing the DC current consumption of the IF amplifier, at the expense of IIP3. The nominal DC voltage at Pin 20 is 2.1V, and this pin should be left open-circuited for optimum performance. The internal bias circuit produces a 4mA reference for the IF amplifier, which causes the amplifier to draw approxi-mately 100mA. If resistor R1A is connected to Pin 20 as shown in Figure 8, a portion of the reference current can be shunted to ground, resulting in reduced IF amplifier current. For example, R1A = 470Ω will shunt away 1.4mA from Pin 20 and the IF amplifier current will be reduced by 35% to approximately 65mA. Table 5 summarizes RF performance versus total IF amplifier current when both channels are enabled.
Table 5. Mixer Performance with Reduced IF Amplifier Current RF = 2500MHz, Low Side LO, IF = 190MHz, VCC = VCCIF = 3.3V
R1A, R1B
ICCIF (mA)
GC (dB)
IIP3 (dBm)
P1dB (dBm)
NF (dB)
Open 200 8.5 27.7 10.4 9.5
3.3kΩ 176 8.4 26.7 10.5 9.5
1.0kΩ 151 8.1 24.9 10.5 9.4
470Ω 130 8.0 23.5 10.4 9.3
IF Amplifier Bias
The IF amplifier delivers excellent performance with VCCIF = 3.3V, which allows a single supply to be used for VCC and VCCIF. At VCCIF = 3.3V, the RF input P1dB of the mixer is limited by the output voltage swing. For higher P1dB, in this case, resistor R2A (Figure 1) can be used to reduce the output impedance and thus the voltage swing, thus improving P1dB. The trade-off for improved P1dB will be lower conversion gain.
With VCCIF increased to 5V the P1dB increases by over 3dB, at the expense of higher power consumption. Mixer P1dB performance at 2500MHz is tabulated in Table 4 for
LTC5593
265593f
Low Power Mode
Both mixer channels can be set to low power mode using the ISEL pin. This allows flexibility to choose a reduced current mode of operation when lower RF performance is acceptable. Figure 14 shows a simplified schematic of the ISEL pin interface. When ISEL is set low (<0.3V), both channels operate at nominal DC current. When ISEL is set high (>2.5V), the DC currents in both channels are reduced, thus reducing power consumption. The performance in low power mode and normal power mode are compared in Table 6.
Table 6. Performance Comparison Between Different Power Mode RF = 2500MHz, Low Side LO, IF = 190MHz, ENA = ENB = High
ISEL
ITOTAL (mA)
GC (dB)
IIP3 (dBm)
P1dB (dBm)
NF (dB)
Low 396 8.5 27.7 10.4 9.5
High 247 7.8 21.6 10.0 9.2
Enable Interface
Figure 15 shows a simplified schematic of the ENA pin interface (ENB is identical). To enable channel A, the ENA voltage must be greater than 2.5V. If the enable function is not required, the enable pin can be connected directly to VCC. The voltage at the enable pin should never exceed the power supply voltage (VCC) by more than 0.3V. If this should occur, the supply current could be sourced through the ESD diode, potentially damaging the IC.
The Enable pins must be pulled high or low. If left float-ing, the on/off state of the IC will be indeterminate. If a three-state condition can exist at the enable pins, then a pull-up or pull-down resistor must be used.
Supply Voltage Ramping
Fast ramping of the supply voltage can cause a current glitch in the internal ESD protection circuits. Depending on the supply inductance, this could result in a supply volt-age transient that exceeds the maximum rating. A supply voltage ramp time of greater than 1ms is recommended.
Spurious Output Levels
Mixer spurious output levels versus harmonics of the RF and LO are tabulated in Table 7. The spur levels were measured on a standard evaluation board using the test circuit shown in Figure 1. The spur frequencies can be calculated using the following equation:
fSPUR = (M • fRF) – (N • fLO)
Table 7. IF Output Spur Levels (dBc)RF = 2500MHz, FRF = –3dBm, FLO = 0dBm, FIF 190MHz, Low Side LO, VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C
N
M
0 1 2 3 4 5 6 7 8
0 –40 –48 –60 –51 –83 –62 –74 *
1 –48 –0 –75 –62 –69 –69 * * *
2 –74 –78 –61 –85 –82 –87 –89 * *
3 * * * –65 * * * * *
4 * * * * * * * * *
5 * * * * * * * *
6 * * * * * * *
*Less than –90dBc
Figure 15. ENA Interface SchematicFigure 14. ISEL Interface Schematic
LTC5593
18ISEL
VCCB
500Ω
VCCA
5593 F14
19
BIAS A
BIAS B
LTC5593
17ENA 500Ω
VCCA
5593 F15
19
CLAMP
APPLICATIONS INFORMATION
LTC5593
275593f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
UH Package24-Lead Plastic QFN (5mm × 5mm)
(Reference LTC DWG # 05-08-1747 Rev A)
5.00 ± 0.10
5.00 ± 0.10
NOTE:1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE2. DRAWING NOT TO SCALE3. ALL DIMENSIONS ARE IN MILLIMETERS4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE5. EXPOSED PAD SHALL BE SOLDER PLATED6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE
PIN 1TOP MARK(NOTE 6)
0.55 ± 0.10
23
1
2
24
BOTTOM VIEW—EXPOSED PAD
3.25 REF3.20 ± 0.10
3.20 ± 0.10
0.75 ± 0.05 R = 0.150TYP
0.30 ± 0.05(UH24) QFN 0708 REV A
0.65 BSC
0.200 REF
0.00 – 0.05
0.75 ±0.05
3.25 REF
3.90 ±0.05
5.40 ±0.05
0.30 ± 0.05
PACKAGE OUTLINE
0.65 BSC
RECOMMENDED SOLDER PAD LAYOUTAPPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
PIN 1 NOTCHR = 0.30 TYPOR 0.35 × 45°
CHAMFERR = 0.05
TYP
3.20 ± 0.05
3.20 ± 0.05
UH Package24-Lead Plastic QFN (5mm × 5mm)
(Reference LTC DWG # 05-08-1747 Rev A)
PACKAGE DESCRIPTIONPlease refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
LTC5593
285593f
Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2011
LT 1011 • PRINTED IN USA
RELATED PARTS
TYPICAL APPLICATION
PART NUMBER DESCRIPTION COMMENTSInfrastructureLTC5569 300MHz to 4GHz Dual Active Downconverting Mixer 2dB Gain, 26.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/180mA SupplyLT5527 400MHz to 3.7GHz, 5V Downconverting Mixer 2.3dB Gain, 23.5dBm IIP3 and 12.5dB NF at 1900MHz, 5V/78mA SupplyLT5557 400MHz to 3.8GHz, 3.3V Downconverting Mixer 2.9dB Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/82mA SupplyLTC6416 2GHz 16-Bit ADC Buffer 40dBm OIP3 to 300MHz, Programmable Fast Recovery Output ClampingLTC6412 31dB Linear Analog VGA 35dBm OIP3 at 240MHz, Continuous Gain Range –14dB to 17dBLTC554X 600MHz to 4GHz Downconverting Mixer Family 8dB Gain, >25dBm IIP3, 10dB NF, 3.3V/200mA SupplyLT5554 Ultralow Distort IF Digital VGA 48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain StepsLT5578 400MHz to 2.7GHz Upconverting Mixer 27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF TransformerLT5579 1.5GHz to 3.8GHz Upconverting Mixer 27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF PortsLTC5590 Dual 600MHz to 1.7GHz Downconverting Mixer 8.7dB Gain, 26dBm IIP3, 9.7dB Noise FigureLTC5591 Dual 1.3GHz to 2.3GHz Downconverting Mixer 8.5dB Gain, 26.2dBm IIP3, 9.9dB Noise FigureLTC5592 Dual 1.6GHz to 2.7GHz Downconverting Mixer 8.3dB Gain, 27.3dBm IIP3, 9.8dB Noise FigureRF Power DetectorsLT5534 50MHz to 3GHz Log Detector ±1dB over Temperature, 38ns Response Time, 60dB Dynamic RangeLT5581 6GHz Low Power RMS Detector 40dB Dynamic Range, ±1dB Accuracy Over Temperature, 1.5mA Supply Current
LTC5583 Dual 6GHz RMS DetectorUp to 60dB Dynamic Range, >50dB Isolation, Difference Output for VSWR Measurement
ADCsLTC2285 14-Bit, 125Msps Dual ADC 72.4dB SNR, >88dB SFDR, 790mW Power ConsumptionLTC2185 16-Bit, 125Msps Dual ADC Ultralow Power 76.8dB SNR, 185mW/Channel Power ConsumptionLTC2242-12 12-Bit, 250Msps ADC 65.4dB SNR, 78dB SFDR, 740mW Power Consumption
Extended frequency range 3.7GHz to 4.5GHz, low side LO, VCC = 3.3V, VCCIF = 3.3V, ENA = high, ENB = ISEL = low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for 2-tone IIP3 Tests, ∆f = 2MHz), IF = 305MHz
Conversion Gain, IIP3 and SSB NF vs RF Frequency
IFA50Ω
4:1TC4-1W-7ALN+
56nH
1000pF
22pF1µF
22pF 1µF
0.5pF
2.2nHLTC5593
CHANNEL A
CHANNEL B NOT SHOWN
1
192021222324
LO50Ω
17
18
16
154
3
RFA50Ω
VCCIF3.3V
VCC3.3V
TOCHANNEL B
TOCHANNEL B
2.2pF2
IFGNDAGND IFA+ IFA– IFBA
LO
GND
ISEL
ENA
VCCA
RFA
CTA
GND
GND
5593 TA02a
56nH
ISEL
ENA
1.1pF
3.3nH
RF FREQUENCY (MHz)3.7
G C (d
B), S
SB N
F (d
B), I
IP3
(dBm
)
20
26
24
22
28
4.4
5593 TA02b
16
18
12
10
8
6
14
43.8 4.0 4.2 4.33.9 4.1 4.64.5 4.7
IIP3
NF
GC
Recommended