EE 132 Electronic Devices and...

EE 132 Electronic

Devices and Circuits

Electrical Engineering Department Faculty of Engineering Alexandria University

Spring 2015

Lecturer: Bassem Mokhtar, Ph.D. Assistant Professor

Department of Electrical Engineering

Alexandria University

Introduction 1-1

Outline

Course Overview

Quick Review on Circuit Basics

Introduction to Electronics

Semiconductor Physics

Introduction 1-2

Course details

Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays)

Tutorial hours: 2 One tutorial class every week

Lab hours: 1 One experiment every two weeks

Course website: http://eng.alexu.edu.eg/~bmokhtar/courses/electronics_EE/spring_2015/electronics_EE.htm

Introduction 1-3

Course outline

Introduction to semiconductor physics and materials (2 weeks) Conductors vs. Insulators vs. Semiconductors

p-type, n-type

p-n junctions (2 weeks) Diodes and diode circuits

BJT transistors (3 weeks) Different types of BJT circuits

DC and AC Biasing

FET transistors (1 week) Brief Introduction

JFET

MOSFET (4 weeks) Different types of MOSFET circuits

DC and AC biasing

CMOS (1 week)

Introduction 1-4

Course Objectives

Having successfully completed this course, the student will be able to: (a) Comprehensively understand of electronic circuits and devices (diodes, BJTs, MOSFETs)

(b) Learn physical models of the operation of semiconductor devices

(c) Examine the design and operation of important circuits that utilize these devices

Introduction 1-5

Course Prerequisites: Course: EE x11 Electric Circuits

References

Lecture Notes

“Microelectronic Circuits”, Sedra/Smith,4th edition, 2004.

“Electronic Devices and Circuit Theory”, Boylestad and Nashelsky, 7th edition

“Fundamentals of Microelectronics”, Razavi, 2006

Introduction 1-6

Assessment Lab Work: ~ 11.5% (20 points)

Experiments and related reports (10 points)

Project (each team comprises 6 students) (10 points)

• Project paper, discussion, presentation and Simulations (LTspice IV)

Midterm Exam: 20% (35 points)

Oral Exam: ~ 8.5% (15 points)

Final Exam: 60% (105 points)

Introduction 1-7

Project The final project will run in parallel with the course. Each team (six students per team)

will choose freely an electronic device/topic (not covered in the course)

The electronic device/topic will be chosen by the team on a first-come first-serve (FCFS) basis (no more than two teams per device/topic)

The team will need to do more extensive searching for the latest research work concerning the selected device/topic

Each team will prepare and submit a project paper (using WORD, LATEX) which provides qualitative study for the their device /topic via including: Schematic of related device structure illustrating the key operating principles

Representative electrical data showing how related device works (e.g., current-voltage curves)

Discussion of the basic operation of related device and key variations thereof

Discussion of the major challenges to realizing the related device in a technology

Table of performance measure metrics for the related device

Table of comparison which compares the related device with other relevant/similar devices

Citation of all referenced work, figures, etc

(You can add other issues based on your selected device/topic) example: experimental study and results

Conducting simulations (using, for example, LTSpice IV) will be considered as bonus for the team members

Implementing hardware circuits for the studied topic/device will be also considered as bonus.

Teams will present their project and they will be discussed

Introduction 1-8

Examples of Project Topics Carbon nanotube field effect transistor

Ballistic transistors

Resonant Tunneling Diode

Coulomb blockade and single electron transistor

Graphene field effect transistor

Dissipation in FETs

Nano Sensors

Flexible Electronics

Quantum effects in nanoscale electronic devices

Raspberry Pi

FPGA

Introduction 1-9

DEADLINE for Project Team Formation and Project Topic

Selection: 22th February

Office Hours

Wednesdays (11:00 am to 12:00 pm) or appointment at office 4-4-F132 Email me via group representatives

Introduction 1-10

Attendance

Attendance in class is considered essential

Course TA Eng. Mostafa Ayesh and Eng. Yahia

Elbeltagy (tutorials)

Quick Review (Circuit Basics)

Introduction 1-11

Quick Review (Circuit Basics)

Introduction 1-12

Quick Review (Circuit Basics)

Introduction 1-13

Test your self now:

Write down equation

for calculating iB in

terms of voltages,

currents and resistors

Quick Review (Circuit Basics)

Introduction 1-14

Quick Review (Circuit Basics)

Introduction 1-15

Quick Review (Circuit Basics)

Introduction 1-16

Quick Review (Circuit Basics)

Introduction 1-17

Quick Review (Circuit Basics)

Introduction 1-18

Quick Review (Circuit Basics)

Introduction 1-19

Introduction 1-20

Introduction to Electronics

Block diagram of a simple electronic system: AM radio receiver

Introduction 1-21

Introduction to Electronics

Amplifiers

Filters

Signal sources (oscillators)

Wave-shaping circuits

Digital logic functions

Memories

Power supplies

Converters

Common “Blocks” in an Electronic System

Introduction 1-22

Introduction to Electronics

Analog vs. Digital Signals

Introduction 1-23

Introduction to Electronics

Analog to Digital Conversion

Introduction 1-24

Introduction to Electronics

Signals and Noise

Introduction 1-25

Introduction to Electronics

Analog vs. Digital Digital circuits advantages

Better immunity to noise

Easier to implement with IC techniques

More adaptable to variable uses

Analog Circuits advantages Require less devices

Better to deal with low signal amplitudes

Better to deal with high frequencies

What is the foundation material for all modern electronics ?

Answer: Semiconductor materials

Introduction 1-26

Introduction 1-27

Brief History Rectification in metal-semiconductor contact (Braun, 1874)

Theory of thermionic emission (Bethe 1942)

Transistor (point-contact transistor) using polycrystalline germanium (Shockley, Bardeen and Brattain, 1947)

Bipolar junction transistor (Shockley, 1947)

Integrated circuit (Kilby and Noyce, 1958) using bipolar junction transistors

Practical metal-oxide-semiconductor (MOS) devices (1960s)

Small Scale Integration (SSI) (~10 Trs.chip) ->MSI(~100 Trs/chip)-> LSI (10,000 Trs/chip) in the 1970s)

VLSI (~10^5 Trs/chip) -> ULSI (10^6 Trs/chip) in the 1990s

Multicore chip processors -> 10^8 Trs/core up to 8 processors by 2010

The International Technology Roadmap for Semiconductors (ITRS) predicts 8 nm feature size with 1000 cores in 2020

Introduction 1-28

GOING TO THE FIRST TOPIC

Semiconductor Physics

Introduction 1-29

Introduction 1-30

Comparison Conductor

Easily can conduct electrical current Least valence electron on the atom-loosely bounded

Insulator Does not conduct electrical current under normal

condition Most are compounds Lots of electron exist on the valence shell-tightly

bounded

Semiconductor Element that is neither a conductor nor an insulator but

lies between the two element A material that is between conductors and insulators in

its ability to conduct electrical current Easily affected by temperature and light energy Most of them have 4 valence electrons on the valence

shells-bounded in intermediate strength

Introduction 1-31

Semiconductor Materials Atom Bohr Model

Atom have planetary type of structure consisting central nucleus equipped with the proton and surrounded by orbiting electron

Proton are positively charged and electron are negatively charged

Atomic number The atomic number is equal to the number of

protons in an atom’s nucleus

Distinguishes the chemical group characteristics

Electron shells and orbit Electron near the nucleus have less energy

than the outer one

Each electron orbits are grouped in shells (energy bands)

Introduction 1-32

Maximum number of electrons

(Ne) that exist in each shells of

atom can be calculated as

Ne = 2n2

where n(1,2,3,…) is the

number of the shells.

Semiconductor Materials Energy level increases as the distance from

the nucleus increases Valence electron

The outmost electrons are in the valence shells and known as valence electrons Valence shells represents the energy band of an atom The farther the electrons from the nucleus, the higher energy it gets Strongly related defining chemical reaction, bonding

structure and electrical properties Semiconductors have four valence electrons at the outermost

atomic shell Most conductors have just one electron in the valence shell

(high probability to form covalent bonds) Insulators have eight valence electrons

Introduction 1-33

Semiconductor Materials

Introduction 1-34

Valence shells represents the band of energy of an atom

Conduction bands

Existence of valence electron where that electron becomes a free electron when it acquires enough additional external energy

Energy gaps

Energy differences between conduction bands and valence bands (define the required energy for electron valence to be a free electron)

Introduction 1-35

Lecture Summary

Covered material Course Introduction

Load, assessment and topics

Quick Review (circuit basics) Introduction to Electronics and Semiconductor

Physics Material to be covered next lecture

Continue Semiconductor Physics Types of semiconductors Types of charge “carriers” in semiconductors Creation of electron-hole pairs Doping