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VLSl
ECL RAMFamilYOfHighSpeedECLRAMs
ECL RAM,
,OA,,
ECL RAM
,,1.3mHi-BiCMOS64k
/12ns,16k/10ns1.mU-ISO4k/5
ns,ECL RAMECL RAM,
,
,,
n
ECL RAM(EmitterCoupled Logic Random Ac-
CeSSMemory),,
,
ECL RAM
,,,ECL RAM
,
,FA(FactoryAutomation)CAD/CAM(Computer
AidedDesign/ComputerAidedManufacturing)
,
,
ECL,
,4k
64kECL RAM
,ECL RAM
1.3JJmHBiCMOS(High Performance Bipolar Com-
plementaryMeta10ideSemiconductor)1.0m
U-ISO(U-grOOVeIsolation),
,ASIC(Ap-
plicationSpecificIntegrated Circuits)
8
1,
2,164kECJRAM16kECJRAM
64kECL RAM``HMlOO490/10490,64k
1ECLlOOk/10k
*11-/**11`ir.
.D.C.21.3.049.77414:81.327.7
* 0Od
* C
** '0
RAM,15ns/12ns,
10ns,64k
1)0.32W/0.42W,
,
CMOS
,1.3/JmHi-BiCMOS
DIP(DualInLinePackage),
LCC(Leadless Chip Carrier)FPG(ce-
ramicFlatPackage),1.3JnHi-BiCMOS
10ns16kECL RAM,4
"HMlOO484''1"HMlOO480''
,,
10k"HMlO484,"HMlO480
1.3JnHi-BiCMOS
ECL RAM,
,
,
,
2.2 4kECL RAM
4kECL RAM"HMlOO474'',1k4
ECLlOOkRAM
,5ns,3.5
nsRAM,
1.m1.0/JmUISO
,10k"HMlO474
,
73
668 VO+.69 No.7(87)
lECL RAM 4k64k,,,
r
4k 16k 64k
HMlOO474-5 HMlO474-5 HMlOO484-10 HMlOO480-10 HMlOO490-15 HMlO490-12/15
l.0mU-1SO l.3/JmHBiCMOS
l024 l024 4096 384 65536 65536
4 4 4 l l
ECLlOOk ECJlOk ECLlOOk ECLlOOk ECJlOOk ECLlOk
nS 5 5 10 10 15 /15
nS 3,5 3.5 6 6 10 10
W l.0 l.1 0.65 0.6 0.32 0.42
FPG24
LCC24FPG24
DG28
FPG28DG20
LCC22
FPG22
DG22
DG22
LCC28
: -1SOGroovelsolation() FPG(ceramic Flat Package)
Hi-BiCMOS(Hjgh Performance Bipolar Complementary Meta10ide Semiconductor) LCC(+eadless Chip Carrjer)
ECL(Emitter Co=Pled Logic) DGDualinJine Package(Cerdip)
,
,
ECL RAM=,
,,
X
X
64k:256256
16k:128128
4k:6464
Y
Y
I ECL RAM 50%
,,L
74
,,Y,
,,RAM
,
,,50%
F),
Hi-BiCMOSRAM,MOS
SRAM(Static RAM),
NMOS,RAM
,()
3ll.3/JmHBiCMOS
,ECL RAM,
,16k64k
,,
CMOS
2/JmHi-BiCMOS,
25ns64kTTL(Transistor Transistor
Logic)/ECL RAM2)3)
,1.3JJmHi-BiCMOS,
RAM,64k12ns,16k
10ns2
CMOS,NP
1.2mCMOS,
,13Jn2
,2/Jm,
,
,
0.15JJm0.3/n,
,2Jm
PMOS NMOS 1 2
N
NP PN,N
N P N p
P
ECL RAM 669
:
CMOS(Complementary Meta10xide Semiconductor)
PMOS(PMOS)
NMOS(NMOS)D
=13/2
=0.15m
=0.30/m
cMOS
=1.2/Jm
=25nm
21.3/Hi-BiCMOS lml.31CMOS
4GHz,1.3/Jm7GHz
LSI
32/Jm1.3JnBi-
CMOS,ECL
0.45ns/,0.3ns/2.m
1.6
3.2l.mU-tSO
,8i-CMOS
10ns,5ns
,
,BCMOS,1
ECL RAM
,ECL(
0.35V)MOS(5V)
N
670 OL.69 No.7(1987-7)
C100k
__1
T L.__
SBD
__T-
(a)
SBD
SBD
C
N-
ECJRAM 671
;)
=
U
(11S)
7 64kECJRAM
12ns
L
JJJ
rJJ44444444hqrJ
rOJJJ5D
(>)
9
;
==
===!=====!=====!
-h-
000 4.D O 5_Ol0
(rlS)
=========-
=====!========!=============!===========
===========!
=============!============!==========l
==========
---1-- - -----6_000 .000(TAA)
4kECJRAM
5ns
LSI,LSI
,LSILSI
(b),,LSI
LSI
`-T
/1///// l+
(>)
=
,==
=
_====
========
n
+U
(ns)
8 64kECL RAM
-5.2V,4.4ns
(>)
=-=
----
5- D D O
(ns)
10 4kECL RAM
-4-6V,2.4ns
,,
,12,8LSIl,
5)
7
//+Sl//
7// /+J_-_.J_J
LSl
(a)
7=/-
r.
++
+
-
>
//+__+
r-
//
___+_+
/L
-
_/LSl
/ / /
_L____+_J
+Sl
-------=------
7rr
1////
>/
>/
/
_____l_+_____
(b) (c) LSl
IlECL RAM (b),+SLSl(
),,(C)l
+Sl
77
672 VOL.69 No.7(1987-7)
12 4k/2.5nstypRAM8
0.7k0.2ns/
,L
13 LS1 7k/6nstyp
l.2k0.25ns/LS=
78
,(c),LSILSI
70F),70
,
13LSI,IA(Index Array)
,7k1,200
,(M-
680)
,,
,
,,
ASIC(Application
SpecificIC)
8
ECL RAM
,1.3/JmHBiCMOS64k/
12ns,16k/10ns1.mU-ISO4k
/5nsECL RAM
ECL RAM,
,
,
,ECL RAM
,
,
,ECL RAM
,
,
ASIC
1)S.Miyaoka,et al.:A7ns/350mW64k ECL Compatible
RAM,ISSCCDIGESTofTECHNICALPAPERS,p.132
133(Feb.1987)
2)K.Ogiue,etal13ns 500mW,64kbitECLRAMUsingHI-
BICMOS Technology,IEEEJournalof Solid-State Cir-
Cuits,Vol.SC-21,NO5,1986,p.681685
3),:Hi-BiCMOS,,68,7,p.533
538(67)
4)Y.Nishioka,et alHighCapacitance Ultra-Thin Ta205
DielectricFilmAppliedtoaHighSpeedBipolarMemory
Cell,IEEEIEDMTechnicalDigest,p.4245(Dec.1985)
5)M.Iwabuchi,et al A7ns128k Multi-Chip ECL RAM-
With-Logic Module,ISSCC DIGEST OF TECHNICAL
PAPERS,p.226227(Feb.1987)
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