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C
ZnO
kristall bindning
N st Si atoms
Filled; 2N electons
Filled; 2N + 6N
Filled; 2N
Filled; 2NUnfilled; 4N
N st Si atoms
Filled; 2N electons
Filled; 2N + 6N
Filled; 2N
Filled; 2NUnfilled; 4N
Eks: SiEks: GaAs
Par av e- og hull (h+) (EHP) !
Intrinsisk Si
Ekstrinsisk Si
N-type
P-type
Kvantbrunn
Fermifordelning i intrinsisk, n-type og p-type material
n
p
n = p
Schematic band diagram
Density of states
Fermi-Dirac distribution
Carrier concentration
RT
Variation of mobility as a
function of total doping
concentration (Na + Nd)
for Si, Ge and GaAs at
300 K
To materialer i likevekt
Hall effekt
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