Atomic-Layer-Deposition (ALD) - KNMF · Atomic-Layer-Deposition (ALD) ... User Office Karlsruhe...

KNMF Laboratory for Micro- and Nanostructuring

Atomic-Layer-Deposition (ALD)

Karlsruhe Nano Micro Facility (KNMF) User Office Karlsruhe Institute of Technology (KIT) Phone: +49 (721) 608-23123 Hermann-von-Helmholtz-Platz 1 Fax: +49 (721) 608-26273 76344 Eggenstein-Leopoldshafen Email: knmf-useroffice@kit.edu Germany Web: www.knmf.kit.edu 1

The full-fledged research atomic-layer-deposition (ALD) system, model Picosun SUNALE R-200 Advanced, is featuring a hot wall reactor for temperatures of up to 500 °C, an ozone generator, a plasma generator as well as the capability to handle three liquid and three solid precursor materials at the same time. The “Picoflow” mode allows for coating of highly irregular surfaces with high aspect ratios of up to 1:2000. A powder holder enables coating of micropowders. Sensitive samples can be handled in an argon filled glove-box and loaded into the process chamber through a load-lock. For this purpose the carrier gas can be switched from N2 to Ar.

Contact Dr. Christian Reitz Phone +49 721 608-28923, fax +49 721 608-28976, email christian.reitz@kit.edu Dr. Philipp Leufke Phone +49 721 608-28687, fax +49 721 608-28976, email philipp.leufke@kit.edu Institute of Nanotechnology (INT) - www.int.kit.edu

Features • conformal 3D coatings

(maximum aspect ratio 1:2000) • 2D thin films • multilayers • graded coatings, powder coatings • ALD is attached to an argon filled glove-box • Process gasses:

- N2 or Ar as carrier gas / purge gas - H2O / O3 for thermal / ozone assisted ALD - NH3 for thermal ALD of nitrides - N2, O2 , H2/Ar (5/95), H2/N2 (5/95), H2/Ar (5/95)

gases for plasma assisted ALD processes • Processes available: Al2O3 and AlN, TiO2 and TiN,

TaN, HfO2, SiO2, Ag, Nb2O5

Design rules • Max. sample height 15 mm • Max. diameter 200 mm (8” Si-Wafer) • Max. 28 cm3 volume for powder coatings

(max. 300 m2/g specific surface area)

Materials metals, ceramics, nitrides

Typical structure

SEM image of an approx. 75 nm thick TiO2 thin film coating on a (100)-oriented Si-Wafer