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2008/Sep/17
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射頻積體電路設計
• Text Book:– Behzad Razavi, “RF Microelectronics,” Prentice Hall PTR, 1998
• References:– 教育部顧問室 混合訊號與射頻電路(MSR)聯盟推廣課程教材
– Thomas H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuits,” 2/e, Cambridge University Press, 2004.
• Contents:1. 射頻及無線通訊簡介 6. 振盪器 (Oscillators)2. 射頻設計之基本概念 7. 功率放大器 (PA)3. 射頻IC主被動元件 8. 調變與解調4. 低雜訊放大器 (LNA) 9. 收發機架構5. 混波器 (Mixer)
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評分標準及參考資訊
• Homework: 10%–一律用A4紙書寫，並裝訂好。遲交的作業：一周內補交成績以
80%採計，隔周起補交打對折。
‧期中考: 35%‧期末考: 35%‧期末報告: 20% • E-mail: ycchiang1970@nchu.edu.tw‧個人網頁: http:/cc.ee.nchu.edu.tw/~ycchiang1970‧實驗室網頁: http://cc.ee.nchu.edu.tw/~rfem‧課程助教: 詹覺安同學 (Lab. 717)
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Introduction
• What is Radio Frequency?
• Traditional definition:– Frequency range for radio and television transmission (1MHz—1GHz)
5103× 6103× 7103× 8103× 9103× 10103× 11103× 12103× 13103× 14103×
310 210 10 1 110− 210− 310− 410− 510− 610−
Long
wav
era
dio
AM
bro
adca
stra
dio
Shor
twav
era
dio
VH
F TV
FM b
road
cast
radi
oMicrowaves
Far I
nfra
red
Infra
red
Vis
ible
ligh
t
Frequency (Hz)
Wavelength (m)
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Introduction
Radio astronomy, high-speed microwave radio relay
30–300 GHz10 mm – 1 mm
Extremely High Frequency
microwave devices, mobile phones (W-CDMA), WLAN, most modern Radars
3–30 GHz100 mm – 10 mm
Super High Frequency
television broadcasts, mobile phones, wireless LAN, ground-to-air and air-to-air communications
300–3000 MHz1 m – 100 mm
Ultra High Frequency
FM and television broadcasts30–300 MHz10 m – 1 m
Very High Frequency
Shortwave broadcasts and amateur radio3–30 MHz100 m – 10 m
High Frequency
AM (Medium-wave) broadcasts300–3000 kHz1 km – 100 m
Medium Frequency
Navigation, time signals, AM longwavebroadcasting
30–300 kHz10 km – 1 km
Low Frequency
Submarine communication, avalanche beacons, wireless heart rate monitors
3–30 kHz100 km – 10 km
Very Low Frequency
Example UsesFrequency & λBand Name & Abbr.
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Introduction
• Standard Prefixes
10dadeka10hhecto10kkilo10Mmega10Ggiga10Ttera
FactoronAbbreviatiPrefix
2
3
6
9
12
18
15
12
9
6
3
2
1-
10aatto10ffemto10ppico10nnano10micro10mmilli10ccenti10ddeci
FactoronAbbreviatiPrefix
−
−
−
−
−
−
−
µ
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Introduction
• IC — high integration trend:
– E.g.
• One rule for IC design– Use fewest off-chip devices as you can
Cost) (ProcessArea)(Wafer Area)(Circuit Cost Die ×=
π××≈ m 0.1m 1.0arear inch wafe-8m 30m 30area deviceA µµ ×=
50000 NT$cost Process =0.00143 NT$cost Device ≈⇒
devices chip-off ofCost devices chip-on ofCost <<⇒
↓↑⇒ devices chip-off of # and devices chip-on of #
↓⇒ customersofCost
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Introduction
• IC production schedule– Design phase: 2 months– Layout phase: 0.5~1 month– Process phase: 0.5~2 months– Shipping & package phase: 0.2~0.5 month– Measurement: 1 months– Total duration: 4.2~6.5 months
• Since the IC production cycle time is very long and the time to market is very tight, the design iteration should be minimized.– One iteration for digital ICs, 1~2 iteration for analog/RF ICs.
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Introduction
• How to minimize design iteration?
• For Foundry– Offer accurate device models– Active devices: corner models, Monte Carlo models– Passive devices: variation ranges
• For Designer– Current-biased scheme for analog/RF ICs– Simulate circuits with most conditions (worst-case simulation)– Add design margin to overcome process variations– Better circuit architectures to overcome process variations
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Introduction
RF designer• Maxwell’s Equations• AC / Field analysis / time domain• dBm / s-parameters / dBc• Smith Chart• Noise Figure in dB• Thermal / Flicker / Shot Noise • GaAs / BiCMOS / CMOS• 20-transistors ICs (for one block)• Network & Spectrum analyzer• Cadence SpectreRF
Mentor EldoRFAgilent ADS / RFDE
Digital/Analog designer• Ohm’s law• DC / AC• Volts• SPICE• Noise in nV/sqrt(Hz)• Thermal Noise• CMOS• 20-transistor bias circuits• Oscilloscope• eSpice
hSpice
LL
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Introduction
Figure 1.1 (a) FM transmitter, (b) FM receiver
Figure 1.2 RF section of a cellphone [1]
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Design Bottleneck
• RF and baseband processing in a transceiver
• Although the baseband section is more complex than RF section in terms of the number of devices, the RF section is still the design bottleneck of the entire system for 3 reasons:1. Multidisciplinary Field2. RF Design Hexagon3. Design Tools
RFSection
BasebandSection
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Design Bottleneck
• Multidisciplinary Field
RF Design
CommunicationTheory
RandomSignals
TransceiverArchitectures
CADTools
IC Design
WirelessStandards
MultipleAccess
SignalPropagation
MicrowaveTheory
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Design Bottleneck
• RF Design Hexagon
• Design Tools– Nonlinearity, time variance, and noise in RF circuits make the SPICE-
like tools (linear ac analysis) no longer suitable or efficient.– External components cannot be modeled by typical devices in SPICE.
They can usually be characterized only by S-parameters.
Noise Power
Linearity
SupplyVoltage
Frequency
Gain
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Applications
16
Applications
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Applications
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Applications
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Analog and Digital Systems
•
Voice Modulator
Carrier
PowerAmplifier
Downconverter Demodulator
Carrier
AudioAmplifier
(a)
(b)Figure 1.6 Block diagram of a generic analog RF system:
(a) transmitter, (b) receiver.
Low-NoiseAmplifier
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Analog and Digital Systems
•ADC Voice
CompressionCoding
InterleavingPulse
ShapingVoice Modulator
Digital
Carrier
PowerAmplifier
(a)
DownConverter
ADC Demodulator Equalizer
VoiceDecompression
DAC
Carrier Digital
AudioAmplifier (b)
Figure 1.7 Block diagram of a generic digital RF system:(a) transmitter, (b) receiver.
De-interleavingDecoding
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Analog and Digital Systems
• In the simplest case: the main consideration is the distance– Power delivered and sensitivity of the receiver
• In a realistic environment: interference, multi-path, movement, etc.– Signal processing will achieve a higher performance
• Which parts are “RF electronics”?
2× 2÷
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Choice of Technology
• GaAs– Higher (breakdown voltage) x (higher cutoff frequency) product, semi-
insulating substrate, and high-quality inductors and capacitor. – Low-yield, low integration, high-cost– PA’s, front-end switches
• BiCMOS / SiGe BiCMOS– Moderate performance and integration, moderate cost
• CMOS– High integration, low-cost– Substrate coupling / loss, modeling, etc
• Silicon BJT• SiGe HBT
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