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Apresentado pelo professor Thierry Czerwiec (Institut Jean Lamour, Nancy, France) no dia 12 de junho na Universidade de Caxias do Sul, em seminário realizado pelo Instituto Nacional de Engenharia de Superfícies e o PGMAT da UCS para um público de 16 estudantes e professores.
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T. Czerwiec, G. Marcos
Institut Jean Lamour (IJL), Ecole des Mines de Nancy, Parc de Saurupt, CS 14234, 54 042 Nancy, France.
Plasma, electron and ion beams surface patterning of metals
Stanislas place in Nancy
Jacques Callot (c. 1592 – 1635) was a draftsman that was working in Nancy and important figure in the development of the old master print (engraving,
etching…)
Introduction what is patterning and why surface patterning?
Strategies for creating surface patterns
Photolithography
Advanced serial mask-less processes
Additive parallel processes with masks (templates)
Removal serial and parallel processes : energy beams
Moving parallel processes : patterning by nitriding
Last experiments done on combining stainless steel patterning by
photolithography and nitriding
Conclusion
Introduction: what is surface patterning?
Surface patterning, also known as surface texturation or surface structuration is a part of surface engineering that consists in the production of a "patterned" surface
with some regular array of surface height features on the size scale of several micrometers to some nanometres
NbOx nano-pilar with a mushroom-like shape prepared by using ultra-thin alumina mask
Austenitic stainless steel patterning by plasma assisted
diffusion treatments
Integrated 3D gold nanoboxes
t = 3 s t =10 s
Deposition of SiOx by atmospheric pressure CVD with localized remote plasma
Introduction: Why creating surface pattern?
Lotus effect
Shark skin effect
Bio-inspired structured surfaces
S.J. Abbott, P.H. Gaskell, Proc. IMechE, Part C, J. Mechanical Engineering Science, 221 (2007) 1181
Gecko (Tarentola mauritanica)Corse, France
T. Czerwiec, “Patterning of metals for surface engineering: from top-down towards self assembly”, conference presented at the 61th workshop of the international union for vacuum science, technique and applications (IUVTA)
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Bio-inspired structured surfaces:
Lotus effect, Gecko, Cicada wings…
Self-cleaning and antireflective surfaces
NanodotsMagnetic data storage
Drag reduction in air and water : Shark skin effect…aeronautics, microfluidics…
Tribology (Lubrication…)Piston ring in automotive…
Introduction: Why creating surface pattern?
h
s
Wh
Wp
h : height of the patterned layer, s : period of the patterned layer
Wp: length of the protrusion, Wh: length of the cavity
Aspect ratio h/s
Application of patterned surfaces to drag reduction
D.W. Bechert, M. Bruse, W. Hage, R. Meyer, Naturwissenschaften, 87 (2000) 157P.R.Viswanath, Progress in Aerospace Sciences, 38 (2002) 571
0
Shear stress with (t) and without (t0) riblets
Drag reduction
tu
ssS+ dimensionless riblet spacing
NASA Langley Research Centre (USA)
ONERA/CERT (France)
Wind tunnel experiments
with 3M riblets on a 1:11 scale of an Airbus
A-320
Use of riblets
Fly tests (Mach
number 0.77-0.79)
on an Airbus A-
320 aircraft
Drag reduction in the range 5 -8% for bladelike ribs
with h/s ≥ 0.6100 ≤ h ≤ 200
mm
Application of patterned surfaces to magnetic data storage
A.O. Adeyeye, N. Singh, J. Phys. D, 41 (2008) 153001R. Luttge, J. Phys. D, 42 (2009) 123001E.A. Dobisz, Z.Z. Bandic, T.W. Wu, T. Albrecht, Proc. IEEE, 96 (2008) 1836
Hard disk drive
Overview of granular versus the patterned media for data storage
Superparamagnetic effect limits the size of a bit
h = 20 nm
s = 350 nm
Co dots
Boundary lubrication(sever wear)
Elastohydrodynamic or mixed lubrication
(moderate wear)
Full-film lubrication(negligible wear)
: m
fric
tion
coe
ffic
ien
t
h.v/P: viscosity. speed/pressure
Application of patterned surfaces to tribology (lubrication)
Stribeck curve
A. Kovalchenko, O. Ajayia, A. Erdemir, G. Fenske, I. Etsion, Tribology International, 38 (2005) 219.
Higher lubricant film thickness
h = 5.5 mm
s =200 mm
Comparison between flat surfaces and textured surface produced by laser surface texturing
Pin-on-disk friction test (steel ball, load 0.16 to 1.6 Pa, speed 0.015 to
0.75 ms-1)
Dimplesdensity
12%
Application in sliding guideways of machine toolsSliding contact elements
Magnetic storage disc surfacesMechanical face seals
Patterned surfaces leads to an improvement in load capacity, wear resistance, friction coefficient etc.. They can act as oil reservoirs and entrap wear particles (in either lubricated or dry sliding)They aid in the film formation of lubricant oilThey act as micro-reservoir for lubricant in case of starved lubrication conditions.
http://www.appropedia.org/Laser_surface_texturing#cite_note-nine-8I. Etsion, E. Sher, Tribology International, 42 (2009) 542
h = 9-10 mm
s =100-110 mm
Application of patterned surfaces to tribology (lubrication)
Better with dimples with low area coverage (10 to 15%) and h/s < 0.02 to 0.03 for s around 100 mm
Surface patterning can be combined with deposition of lubricant layers
(MoS2, DLC…)
Application to piston ring in automotive
Dynamometer tests on a compression engine have shown 4% lower fuel consumption for textured piston rings
Strategies for creating surface patterns:top-down, bottom-up, self-assembly
With or without mask (template) ? Serial or parallel?
Strategies for creating surface patterns
Bruzzone A.A.G., Costa H.L., Lonardo P.M., Lucca D.A., CIRP Annals. Manufacturing Technology 57 (2008) 750
Adding material: the patterned surfaces are created by addition of material to the desired surface, creating small areas of relief.
Removing material: the patterned surfaces are produced by removal of material of the surface, creating small depressions.
Moving material: the change in the surface structure is attributable to elastic or plastic deformation and redistribution of material from some parts of the surface to others.
Self-forming: a disordered system of components, already on the surface or brought to the surface, forms an organized pattern as a consequence of specific, local interactions among the components themselves.
Metalpatterning
K.P. Rajurkar, G. Levy, A. Malshe, M.M. Sundaram, J. McGeough, X. Hu, R. Resnick, A. DeSilva, Annals of the CIRP, 55 (2006) 643
Elaboration techniques: photolithography as a standard top-down approach
Mask with the pattern to be transferred
S. Roy, J. Phys. D, 40 (2005) R413M. Geissler, Y. Xia, Adv. Mater., 16 (2004) 1249R. Luttge, J. Phys. D, 42 (2009) 123001
Substrate covered by a photosensitive material resist
Gold deposition through a
polymeric mask
Etched Si with a gold layer as a mask
Resolution below 500 nm and around 45 to 25 nm for DUV and EUV lithography
Writing with a rigid stylus
(micromachining, STM, AFM…
Writing with a beam (photons, electrons, ions)
Writing with an electric field, or a magnetic field
Mask generation
Advanced serial mask-less processes
Electro-physical and electro-chemical processes
S.Roy, J. Phys. D, 40 (2005) R413K.P. Rajurkar, G. Levy, A. Malshe, M.M. Sundaram, J. McGeough, X. Hu, R. Resnick, A. DeSilva, Annals of the CIRP, 55 (2006) 643Chakravarty Reddy Alla Chaitanya, Kenichi Takahata, J. Micromech. Microeng., 18 (2008) 105009
Advanced serial mask-less processes
Electro-physical process (dielectric liquid)Micro-electro-discharge machining
Electro-chemical process (conductive liquid: electrolyte)
Chemical reactions with electron transfer across an interfaceMn+ + n e- ↔ M0
Electrochemical printing (EcP) Mn+ + n e- → M0
Electrochemical dissolution or machining M0 →Mn+ + n e-
Classical ECM use masks for localize etching
Elaboration techniques: other processes
Advanced serial mask-less processes
S.Roy, J. Phys. D, 40 (2005) R413R. Schuster, ChemPhysChem, 8(2007) 34.K.P. Rajurkar, G. Levy, A. Malshe, M.M. Sundaram, J. McGeough, X. Hu, R. Resnick, A. DeSilva, Annals of the CIRP, 55 (2006) 643L. Cagnon, V. Kirchner , M. Kock, R. Schuster1, G. Ertl1, W. T. Gmelin, H. Kück, Z. Phys. Chem., 217 (2003) 299M. Geissler, Y. Xia, Adv. Mater., 16 (2004) 1249
Electrochemical micro-patterning with nano-second voltage pulses
Electrochemical nano-patterning by scanning tunneling microscope (STM)
Ni sheets patterned by W STM tips 0.2M electrolyte with 2 ns pulses
3M HCl/6M HF electrolyte with a 143 ns pulse
Laser induced chemical vapor deposition (LCVD) Focused beam (ions or electrons) CVD Inkjet printing Dip-pen nanolithography Electro-hydrodynamic atomization
Other add-on processes
Serial mask-less processes : localized PACVD
Advanced serial mask-less processes (self-assembly?)
Capillary ( 100 µm)
HV DC
450MHz ~
Metal tube
Gases
Cu w
ire
~
~3 mm
Y. Shimizu et al., Surf. Coat. Technol. 200 (2006) 4251A. Holländer and L. Abhinandan, Surf. Coat. Technol. 174-175 (2003) 1175
’Tower’ of hydrocarbon deposited by microjet CVD(10 s, 8 sccm acetylene, 0.25 mm capillary, 8.4 mm away from the substrate, 12 W rf) The peak is 2.4 mm high.
‘Tower’ of tungsten oxide deposited by wire spraying
Using self-assembly
The formation of these self-organized structures may be explained by the presence of
strong electromagnetic EM fields at the processing surface.
A. Holländer and L. Abhinandan, Surf. Coat. Technol. 174-175 (2003) 1175D. Mariotti, V. Svrcek, D.G. Kim, Appl. Phys. Lett., 91 (2007) 18311.
Serial mask-less processes : localized PACVD
Advanced serial mask-less processes (self-assembly?)
Serial mask-less processes : localized PACVD
Advanced serial mask-less processes (self-assembly?)
Atmospheric pressure CVD by localized remote plasma
Microwave power supply Circulator
Mass flowcontroller
Coaxial cable
O2Ar
Rotating fan
Substrate (SS)
Plasma
Fused silica tube
Microwave cavity
Teflon ® rung
Ar/HMDSO inlet
Ar
HMDSO
Thermostat bath
Microwave power supply Circulator
Mass flowcontroller
Coaxial cable
O2Ar
Rotating fan
Substrate (SS)
Plasma
Fused silica tube
Microwave cavity
Teflon ® rung
Ar/HMDSO inlet
Ar
HMDSO
Thermostat bathAr-10%O2 (275 sccm) Plasma Power: ~120 WHole diameter: 400 µm Ar-0.17% HMDSO (200+30 sccm)
HMDSO
inner wall of the cavityplasma
Ar-10%O2
19
« nest-like » structure hexagonal walls
nano-dots
pleated film
Between 0.5 et 5mm
From 200 nm to 6 µm
SiOx
Serial mask-less processes : localized PACVD
Advanced serial mask-less processes (self-assembly?)
Atmospheric pressure CVD by localized remote plasma
Additive parallel processesWith masks (templates)
H. Masuda, K. Fukuda, Science, 268 (1995) 1466 and H. Masuda, M. Satoh, Jpn J. Appl. Phys., 35 (1996), L126 Yong Lei, Weiping Cai, Gerhard Wilde, Progress in Materials Science, 52 (2007) 465
Additive processes : nano-patterning using ultra-thin alumina masks (UTAM)
Electrochemical method combined with nano-patterning techniques
Highly ordered porous aluminum oxide layers can be formed in optimized acid electrolytes
Pore diameter (10-200 nm) and cell size (25-420 nm) with an hexagonal arrangement
Membranes formed in these nano-porous anodic aluminum oxide can be used as templates
Fabrication process of attached UTAMs Fabrication process of connected UTAMs
Advanced parallel processes with mask (directed self-assembly)
Additive processes : building blocks
Advanced parallel processes with mask (self-assembly)
J.Y. Cheng, C.A. Ross, H. I. Smith, E.L. Thomas, Adv. Mater. 18 (2005) 2505T.W. Haley, Nanotechnology, 14 (2003) R39Hidetaka Asoh, Seiji Sakamoto, Sachiko Ono, J. Colloid Interface Science, 316 (2007) 547
Different types of building blocksBlock copolymers
Nanolithography for Co dots array fabrication
Colloidal or nanosphere particles
Honeycomb and isolated-island Cu
patterns.
Cu patterns with 500 nm interval (electroless plating in CuSO4/HF)
Removal serial and parallel processes :
energy beams
Energy beam processes : laser direct imaging
Metal drilling process
S. Roy, J. Phys. D, 40 (2005) R413P. G. Engleman, A. Kurella, A. Samant, C. A. Blue, N. B. Dahotre, JOM (2005) 46I. Etsion, E. Sher, Tribology International, 42 (2009) 542
Multi-scaled zirconia (ZrO2) coating on a
Ti-6Al-4V alloy substrate. ZrO2
powder was mixed with a water-based organic solvent and
was sprayed onto Ti-6Al-4V substrates and
fused with a pulsed Nd:YAG laser
operated at 10 kHz and at a constant power of 25 W.
Metal writing process
Piston ring (steel) texturation by direct laser imaging
Removal serial mask-less processes
Energy beam processes : laser shock peening
120 mm
0,5 mm
Y.B. Guo, R. Caslaru, Fabrication and characterization of micro dent arrays produced by laser shock peening on titanium Ti–6Al–4V surfaces , Journal of Materials Processing Technology 211 (2011) 729–736
Removal serial mask-less processes
Creation of micro dent (dimples) arrays on a titanium alloy by laser
shock peening
Energy beam processes : laser sub-surface patterning (3D)
Z. L. Li, T. Liu, C. C. Khin, A. C. Tan, L. E. Khoong, H. Y. Zheng, W. Zhou, Direct patterning in sub-surface of stainless steel using laser pulses, OPTICS EXPRESS 18 (2010) 15990.
Removal and moving serial mask-less processes
Nd:YAG laser pulse, peak power density of 1 MW/cm2
Potential applications : security marking, micro-devices based on porous materials : micro-heater, micro-insulator and micro-sensor.
Stainless steel
substrate
Energy beam processes : laser interference metallurgy
M. D’Alessandria, A. Lassagni, F. Mücklich, Applied Surface Science, 255 (2008) 3210M. Duarte, A. Lassagni, R. Giovanelli, J.Narciso, E. Louis, F. Mücklich,, Advanced Engineering Materials, 10 (2008) 554
Laser interferences are obtained from the interaction of two or
three laser beams
The interference pattern covers the size corresponding to the
beam diameter
The obtained textured surfaces are the negative of the
interference pattern (molten of metal at the interference
maxima)
No mask and no etching
mdi
105
)2/sin(2
Removal and moving parallel mask-less processes
Removal and moving parallel mask-less processes
Line-like periodic patternTwo laser beams
Dot-like periodic patternThree laser beams
Cross-like structures, two laser beams → line-like structuresSample rotation 90°, two laser beams → cross-like structures
Energy beam processes : laser interference metallurgy
M. D’Alessandria, A. Lassagni, F. Mücklich, Applied Surface Science, 255 (2008) 3210M. Duarte, A. Lassagni, R. Giovanelli, J.Narciso, E. Louis, F. Mücklich,, Advanced Engineering Materials, 10 (2008) 554
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2+
Ar +
or
Rapid neutrals
N
Removal parallel mask-less processes
Energy beam processes : Ion beam
High ion energy (1 keV) Sputtering
Negative transfer to the substrate
« Patterning of magnetic structures on austenitic stainless steel by local ion beam nitriding »
SEM
MFM
Magneto-optic Kerr effect (MOKE) magnetometry
E. Menendez, A. Martinavicius, M.O. Liedke, G. Abrasonis, J. Fassbender, J. Sommerlatte, K. Nielsch, S. Surinach, M.D. Baro, J. Nogue´s, J. Sort, Acta Materialia 56 (2008) 4570.
Moving parallel processes : Patterning by nitriding
Towardstress patterning
engineering
Surface Patterning by plasma assisted nitriding at low ion energy
Stress and anisotropic strain
Substrate
Nitrided layer (without stress and nitrogen)
Substrate
s
Internal stress necessary to return film
to substrate dimension
Nitrided layer (with nitrogen)virtually removed from the substrate
Substrate action on the layer
Nitrided layer (with nitrogen)virtually removed from the substrate Dx
e
Dilatational or compositional strain (ec)
Elastic strain (ee) Internal stress (s)
T. Czerwiec, G. Marcos, T. Thiriet, Y. Guo, T. Belmonte, to be published in IOP Conference Series: Materials Science and Engineering
Fcc lattice
Dilatational or compositional strain (ec)
Nitrogen introduction
Moving parallel processes with mask
N N
Initial interface
Without maskWith a mask
Elastic and/or plastic deformation induced by nitrogen incorporation
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50 mm
50 mm
Surface Patterning by plasma assisted nitriding at low ion energy
Moving parallel processes with mask
Principle of surface patterning by plasma assisted nitriding
Initial interface(AISI 316L)
With a mask
N
Remote plasma assisted nitriding
N
N N
N N
N N
N
Gas inlet
Primary and turbomolecular pump
450 mm
360 mm
Antenna
Gauge
Substrateholder
microwave power supply
Elastic and or plastic deformation induced by nitrogen incorporation
Micropatterning!
Grid: mesh side of 200 * 200 µm2
Copper TEM Grids
Exemple of surface patterning by plasma assisted nitriding
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3 mm
3 mm
Plasma: 60% N2 + 40% H2
Substrate temperature: ~ 400 °C
Pressure: 5.75 Pa
Process duration: 1h
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0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 µm
High step mean : ~240 nm
High step mean : ~275 nm
Extraction of profiles :Surface profilometry
46 48 50 52 54 56 58 60 62 64
4000
6000
8000
10000
12000
2
Inte
nsity
[A.U
.]
Grids No grids
4000
8000
12000
16000
20000
X-ray diffraction patterns
10 µm
Cross section of a step
Cross section of one dot
30 µm
2 µ
m
Silicon oxide layer patterned: procedure (coll LPN)
AISI 316L
Polished like-mirror
PECVD
N2O/SiH4
Spin coating
AZ5214 photoresist
UV photolithography
CCP RIE
SF6 /CHF3
CCP RIE
O2
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500 nm
Patterned mask: features and characteristics
SEM picture
Cylindrical dots with diameters from 3 to 15 µm
AFM picture (height mode)
Patterned mask and expanded austenite
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Longueur = 50.0 µm Pt = 0.843 µm Echelle = 1.00 µm
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Longueur = 50.0 µm Pt = 0.983 µm Echelle = 1.00 µm
Dots after nitriding in MDECR: 4 h. at 400 °C (80% N2 – 20 H2), bias 0 V
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AFM picture
500 nm 550 nm
500 nm500 nm
In such conditions, the nitrided layer is 5.6 to 6 µm thick and we are waiting for a 500 nm to 600 nm expansion (same height for SiO2 dots
and substrate)
What happens?
Patterned mask and expanded austenite
Dots after nitriding in MDECR: 4 h. at 400 °C (80% N2 – 20 H2), bias 0 V
Dot with a diameter of 7 µm
No strongly distortion
Dot with a diameter of 15 µm
A toroidal-shell shape!
Patterned mask and expanded austenite
Dots after nitriding in MDECR: 4 h. at 400 °C (80% N2 – 20 H2), bias 0 V
0 10 20 30 40 50 60 70 80 90 100 110-500-400-300-200-100
0100200300400500600700800900
1000
DotsNitrided parts Nitrided parts
500 nm
300 nmto
900 nm
200 nmto
750 nm
Expansion of the nitrided layer (as expected)
Vertical movement of the SiO2 dots (totally for the smaller ones; at edges for the bigger)
What is the role of expanded austenite ?
Patterned mask and expanded austenite
SEM cross-sections after 2 nitriding processes in MDECR: 4 h. at 400 °C (80% N2 – 20 H2),
bias 0 V
Expanded austenite
Austenite
Dot
For the small dots: nitrogen completely diffuses under the mask For the big dots: only a diffusion under mask edges
Progressive mask distortion
Dots with 800 nm of thick. Same shapes.
0,0 2,0x104 4,0x104 6,0x104 8,0x104 1,0x105
-800
-600
-400
-200
0
200
400
600
800
1000
1200
1400 4h 6h 8h 10h
nm
nm
Different nitriding steps at 400 °C (80% N2 – 20 H2)
Progressive mask distortion
After 10h nitriding
4h
6h
10h
CONCLUSION
Surface patterning was introduced
Some applications of surface patterning (drag reduction, lubrication, self-cleaning
and magnetic data storage) were presented to show the importance of shape and
aspect ratio in surface patterning
Based on an tentative classification of strategies for surface patterning, different
elaboration techniques were presented (photolithography, advanced serial mask-less
processes, advanced parallel processes with masks, advanced parallel mask-less
processes
Finally, a strain driven patterning method developed by us was presented: austenitic
stainless steel patterning by plasma assisted diffusion treatments:
ACKNOWLEDGMENTS
IJL “ESPRIT” team