Fab presentaion

WAFER PROCESSING EQUIPMENT

AND

CLEAN ROOM INVENTORY

FOR A RESEARCH BASED IC FABRICATION FACILITY

SAMI UR REHMAN

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Difference between Si wafer processing and compound (III/V) wafer processing

Oxidation Silicon has a natural oxide while compound semiconductors do not (deposition required). Compound semiconductor requires epitaxial deposition techniques which are quiet expensive!

Stability

Most of these compound semiconductors are not stable at high temperatures unlike Si. For Si, one would therefore make MOSFET kind of structures.

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Lattice Constants The first and principal difference between a Si

and a GaAs substrate is the respective lattice constants. Crystalline materials (thin films) which will be deposited on top of such substrates will have to take this into account. Etching

Compound semiconductors like GaAs also requires a complex Chlorine based etch process unlike Si (F based etch).

Difference between Si wafer processing and compound (III/V) wafer processing

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WHAT IS A CLEAN ROOM?

• A clean-room or clean room is an environment, typically used in manufacturing and scientific research, that has a low level of environmental pollutants such as dust, airborne microbes, aerosol particles and chemical vapors (Wikipedia)

• What matters is Particle size and particle number

• The standard is called: FED-STD-209 E

• This standard was cancelled on Nov 2011

• Standardizing Agency: U.S. General Services Administration (GSA)

• Replaced by ISO 14644-1

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CLEAN ROOM CLEAN ROOM STANDARDS

Particle Counters are used to determine the air quality by counting and sizing the number of particles in the air. This information is useful in determining the amount of particles inside a building or in the ambient air It also is useful in understanding the cleanliness level in a controlled environment.

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Cost Analysis

• Quotations have been sent

• SANCO

• Rough estimates of the equipment have been obtained from:

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CLEAN ROOM

PARTICLE COUNTERS

Manufacturer Capovani Brothers Inc

Model PARTICLE MEASURMENT SYSTEMS LPS A-310

Price $ 7,350.00 (each)

Year of

Manufacture

2001

Dimensions Width8.750 in (22.2 cm) Depth18.000 in (45.7 cm) H

eight7.000 in (17.8 cm)

Weight 30 lb (14 kg)

Accessories/Othe

r Information

Maximum Number of Channels =4

Channel Sizes= 0.3, 0.5, 1.0, 5.0 µm

Light Source=HeNe Multimode, Passive Cavity

$7,350

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http://www.capovani.com/iinfo.cfm?itemno=41582&alert=other



CLEAN ROOM

PARTICLE COUNTERS

Manufacturer Pacific Scientific

Model MET ONE

Price $ 4,250.00

Year of

Manufacture

2001

Dimensions Width13.000 in (33.0 cm) Depth12.000 in (30.5 cm) Heig

ht7.000 in (17.8 cm)


Accessories/Other

Information

Part no.: 331-3-1-AL

Particle size: 0.3 to 10 Micron

$4,250

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CLEAN ROOM

AIR CONDITIONER/AIR FLOW CONTROLLER

Manufacturer Air Control Inc.

Model VLF CART

Price $ 3,250.00

Year of Manufacture 1998

Dimensions Width 74.000 in (188.0 cm)

Depth 21.000 in (53.3 cm)

Height 74.000 in (188.0 cm)

Weight 5,459 lb (2,476 kg)

Accessories/Other

Information

Unit contains a 9W X 10H array of

stainless steel cubicles (6.25"W x 4"H

x 11"D)

Blower: (2) EBM's STD

Prefilter #: (2) 16 x 20 x 1

Hepa Filter #: (1) 18 x 48 x 3 $3,250

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CLEAN ROOM

AIR CONDITIONER/AIR FLOW CONTROLLER

Manufacturer Air Control Inc.

Model AirPod

Price

Year of Manufacture

Dimensions Width: AirPod I: 62.50”, AirPod II: 80.50”, AirPod III: 104.50” Height: 31.00” Depth: 31.00”

Weight Weight (lbs): AirPod I: 312, AirPod II:

394, AirPod III: 455

Accessories/Other

Information

Nominal Air flow: 2500 CFM (3/4 HP), 5000 CFM (3HP), 4000 CFM (3HP with AD after-filter). Blower Pkg (HP): AirPod I: 2-speed forward curve, direct drive; AirPod II & III: Dynamically balanced, non-sparking, motor/blowers. (Optional 2-speed motor/blower available for AirPod II.) Electrical: AirPod I, standard: 115/1/60, 11.4 amps, 3/4 HP; AirPod II & III, standard: 208-230/460/3/60, 7.8-7.2/4 amps, 3 HP; optional: 230/1/60 11.7 amps, 3 HP.

$3,000

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IC FABRICATION PHILOSOPHY!

Deposition

Adding layer onto wafer! Adding impurities in

wafer!

Implantation

Removing an added layer!

Etching

Photolithography

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III/V Group ingot production

Similar to the silicon ingot growth process, elemental forms of III and V group elements, plus small quantities of dopant material-silicon, tellurium or zinc-are reacted at elevated temperatures to form ingots of doped single- crystal III/V material like GaAs.

Quartz Tube

Rotating Chuck

Seed Crystal

Growing Crystal

(boule)

RF or Resistance

Heating Coils

Molten Silicon

(Melt)

Crucible

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Photomask Creation

• The photomask is a copy of the circuit pattern, drawn on a glass plate coated with a metallic film.

• The glass plate lets light pass, but the metallic film does not.

• Due to increasingly high integration and miniaturization of the pattern, the size of the photomask is usually magnified four to ten times the actual size.

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PHOTOLITHOGRAPHY

Wafer processing consists of a sequence of

additive and subtractive steps with patterning!!!!!

oxidation

deposition

ion implantation

etching lithography

Lithography refers to the process of transferring a circuit pattern, embedded on a mask, to the surface of the wafer

Equipment, materials, and processes needed: • A mask (for each layer to be patterned) with the desired pattern

• A light-sensitive material (called photoresist) covering the wafer so as to receive the pattern

• A light source and method of projecting the image of the mask onto the photoresist (“printer” or “projection stepper” or “projection scanner”)

• A method of “developing” the photoresist, that is selectively removing it from the regions where it was exposed

Photolithography is a process analogous to developing film in a darkroom

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PHOTOLITHOGRAPHY STEPS

• 1 # PRE BAKE THE WAFER

Wafer is preheated to about 200 - 250 degrees C in a bake oven. The purpose of this step is to ensure that the wafer is completely dry. Any moisture on the wafer surface would interfere with the photolithography process, causing it to yield poor results.

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• 2 # PHOTORESIST APPLICATION AND SPINNING

• The wafer is placed on the wafer chuck in the center of the Photoresist Spinner. After properly adjusting the wafer on the spinner, photo resist material is applied onto the surface of the wafer and is spun so that photo resist evenly distributes on the wafer

• Using the Nitrogen Gun,

now the wafer surface is

Blown to remove any dust

particles.

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PHOTOLITHOGRAPHY STEPS Photoresist Raw Materials

http://www.mitsuichemicals.com/photoresist.htm

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http://www.mitsuichemicals.com/photoresist.htm

PHOTOLITHOGRAPHY STEPS Photo resist properties

http://www.cleanroom.byu.edu/photoresists.phtml

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http://www.cleanroom.byu.edu/photoresists.phtml

Photoresist Spin Coater

Vacuum

PR

EBR

Wafer

Chuck

Water Sleeve

Drain Exhaust

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Photoresist Applying

Spindle

PR dispenser nozzle

Chuck

Wafer

To vacuum pump 20

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Photoresist Suck Back

Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Photoresist Spin Coating

Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Spindle

To vacuum pump

PR dispenser nozzle

Chuck

PR suck back

Wafer

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Edge Bead Removal

Spindle

To vacuum pump

Chuck

Wafer Solvent

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Edge Bead Removal

Spindle

To vacuum pump

Chuck

Wafer Solvent

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Optical Edge Bead Removal Exposure

Spindle

Chuck

Wafer

Photoresist

Light source

Light beam

Exposed Photoresist

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• 3 # SOFT BAKE

• The wafer is placed into the Soft-Bake Oven for 30 minutes.

• The purpose of the soft bake is to semi-harden the photoresist

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Methods of Soft Bake

• Hot plates

• Convection oven

• Infrared oven

• Microwave oven

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Baking Systems

Heater

Vacuum

Wafer

Heater

Heated N 2

Wafers

MW Source

Vacuum Wafer

Photoresist

Chuck

Hot plate Convection oven Microwave oven 36

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Hot Plates

• Widely used in the industry

• Back side heating, no surface “crust”

• In-line track system

Heater

Wafer

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• 4 # EXPOSE TO UV LIGHT

• carefully place the wafer on the wafer chuck of the Aligner

• When the wafer has been properly aligned to the mask, expose it to UV light

• the exposure time should be set according to the particular type of photo resist and wattage of the bulb being used.

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Alignment

P-Well

n+ n+

Polysilicon

Photoresist

Gate Mask

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Exposure Gate Mask

P-Well

n+ n+

Polysilicon

Photoresist

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Ready for Post Exposure Bake

P-Well

n+ n+

Polysilicon

Photoresist

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• 5 # DEVELOPMENT

• The type of developer solution used is determined by the type of photoresist chosen.

• Then we check the developer for the recommended development time. Typically, this will be around 30 seconds

• Then the wafer is immersed in the developer and agitate mildly until the time has expired.

• Finally the wafer is rinsed with ionized water

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Schematic of a Spin Developer

Vacuum

Developer Wafer

Chuck

Water sleeve

Drain

DI water

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Applying Development Solution

Spindle

Chuck

Wafer

Exposed Photoresist

Development solution dispenser nozzle

To vacuum pump 44

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Applying Development Solution

Spindle

To vacuum pump

Chuck

Wafer

Exposed Photoresist

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Spindle

To vacuum pump

Chuck

Wafer

Patterned photoresist

Developer Spin Off

Edge PR removed

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DI Water Rinse

Spindle

To vacuum pump

Chuck

Wafer

DI water dispenser nozzle

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Spin Dry

Spindle

To vacuum pump

Chuck

Wafer

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Ready For Hard Bake

Spindle

Chuck

Wafer

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Development Profiles

PR PR

Substrate Substrate

PR

Substrate

PR

Substrate

Normal Development

Under Development Over Development

Incomplete Development

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Developer Solution

•+PR normally uses weak base solution

•The most commonly used one is the tetramethyl ammonium hydride, or TMAH ((CH3)4NOH).

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Developer Solutions

Positive PR Negative PR

Developer TMAH Xylene

Rinse DI Water n-Butylacetate

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• 6 # HARD BAKE THE WAFER

• The wafer is placed into the Hard Bake oven now which should be preheated to between 120-130 degrees C.

• The wafers should remain in the hard bake oven for 30 minutes. This prepares the wafer for the next processing step.

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Types of Photoresist

Negative Photoresist

• Becomes insoluble after exposure

• When developed, the unexposed parts dissolved.

• Cheaper

Positive Photoresist

• Becomes soluble after exposure

• When developed, the exposed parts dissolved

• Better resolution 54

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Mask/reticle

Exposure

After Development

Negative Photoresist

UV light

Positive Photoresist

Substrate

Substrate

Substrate

Photoresist

Negative and Positive Photoresists

Substrate

Photoresist

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Comparison of Photoresists

- PR

Film

+ PR

Film

Substrate Substrate

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Wafer In

Hot Plate Developer dispenser Track

Hot Plate Spin Station

Stepper

Track Robot

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Pre-bake and Primer Vapor Coating



Stepper

Track Robot

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Stepper

Track Robot

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Soft Bake



Stepper

Track Robot

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Alignment and Exposure



Stepper

Track Robot

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Post Exposure Bake (PEB)



Stepper

Track Robot

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Development



Stepper

Track Robot

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Hard Bake



Stepper

Track Robot

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Wafer out



Stepper

Track Robot

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Resolution

•The achievable, repeatable minimum feature size

•Determined by the wavelength of the light and the numerical aperture of the system. The resolution can be expressed as

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Resolution

NA

KR

1

• K1 is the system constant

is the wavelength of the light

NA = 2 ro/D, is the numerical aperture

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Numerical Aperture

• NA is the ability of a lens to collect diffracted light

• NA = 2 r0 / D

– r0 : radius of the lens

– D = the distance of the object from the lens

• Lens with larger NA can capture higher order of diffracted light and generate sharper image.

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To Improve Resolution

• Increase NA

• Larger lens, could be too expensive and unpractical

• Reduce DOF and cause fabrication difficulties

• Reduce wavelength

• Need develop light source, PR and equipment

• Limitation for reducing wavelength

• UV to DUV, to EUV, and to X-Ray

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Depth of focus

• The range that light is in focus and can achieve good resolution of projected image

• Depth of focus can be expressed as:

2

2

)(2 NA

KDOF

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Depth of Focus

• Smaller numerical aperture, larger DOF

• Disposable cameras with very small lenses

• Almost everything is in focus

• Bad resolution

• Prefer reduce wavelength than increase NA to improve resolution

• High resolution, small DOF

• Focus at the middle of PR layer

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Photolithography MASK ALLIGNER

Karl Suss MA-6 Mask Aligner

Description Can handle Si and Compound

semiconductor wafers

Up to 6"in size

240 nm to 365 nm wavelength.

1:1 exposure system

Maximum wafer thickness:

4.3mm

Alignment accuracy of +-0.5um

$69,000

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Mask-aligner EV-420

Description Contact mask-aligner for optical lithography Double side exposure Lamp power: 350 W Illumination spectrum: no filters

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Manufacturer SussMicrotec

Model BLE RESPECT 600


Accessories/ Other Specifications

400 V 16 A 50 Hz

System features

Programmable controller

PC with windows NT4SP6 and

applications program Respect

1.0b0087/1.1b0002

Touch screen

RS 232 Interface

Vacuum monitoring

External cabinet exhaust

connection

Automatic exhaust control

Media control panel

Silicon and compound

semiconductor wafers

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Photolithography SPINNERS

Solitec 5100 LVT •Provides spin processing of single wafers/substrates

of up to 225mm diagonal •Tools for loading and centering for:

4 inch (100 mm) substrate

2 inch (50 mm) substrate

Solitic is the main manufacturer of this equipment, Various models from the

same Company shown below

$30,000

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Photolithography BAKE OVENS

Yes 450pb oven Description: The 450PB is a high temperature vacuum oven using a programmable temperature controller and programmed vacuum and nitrogen flow cycles for curing of polyimide films. The unit features filtered heated nitrogen purging from the entire surface of the roof through the floor of the chamber. This flow acts to clean the wafers during the process.

Specs Capacity: Up to two boats of 6 inch wafers Ramp: 8°C/min Cool-down: 1-2°C/min Max Temperature: 400°C Idle Temperature: 50°C

$22,500

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WAFER PROCESSING

Deposition

Etching

Ion implantation

•CVD

•PECVD

•PVD

•SPUTTERING

•EVAPORATION

•MBE

•DRY ETCHING

•WET ETCHING

•DIFFUSION

•ANNEALING

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CHEMICAL VAPOR DESPOSITION

Chemical Vapor Deposition is the formation of a

non-volatile solid film on a substrate by the reaction

of vapor phase chemicals (reactants) that contain the

required constituents.

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CHEMICAL VAPOR DESPOSITION

• Gases to be reacted are entered into the CVD chamber and react to produce the desired material to be deposited on the wafer under extremely high temperature.

• Wafer temp is cooler than the furnace

• Changing the reacting gases we can produce any material to be deposited

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PECVD

• PECVD uses two electrodes one of which contains the wafer

• A strong electric field b/w the electrodes ignites the plasma which decomposes the reactant gases into the material to be deposited on the wafer substrate.

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SPUTTERING

• High energy plasma knocks metal atoms out of its crystalline structure and are deposited on the wafer substrate!

• Mainly used for

creating metal

contacts (Aluminum,

Titanium etc)

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SPUTTERING PVD75 RF Sputterer

Description •The RF sputterer can be used to deposit many dielectrics.

•Sputter two or more dissimilar materials simultaneously

•for complete control of film stoichiometry (co-deposition)

•Integrated touch screen control

•Single substrate up to 12" diameter

•Multiple substrate up to 4" diameter

•Substrate fixture rotation up to 20rpm

$60,000

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SPUTTERING ARC-12M sputtering system

Gases available: Ar, O2 & N2 - DC sputtering power source: 2 x 250W - RF sputtering power source: 600W at 13.56MHz - Chamber pressure: 5x10-6 torr - Substrate size: 2”, 4” wafer or square glass, or specimen - Targets available: Ag, Al, Al/Si (1%), Au, Cu, Cr, Hf, Mo, Pt, SnO2, SiN, Ti, TiW

http://www.mff.ust.hk/Eq_Sputter.htm

$55,000

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http://www.mff.ust.hk/Eq_Sputter.htm

SPUTTERING CVC DC Sputterer

Description

The DC sputterer is used to coat samples with metals. Metal coatings are usually performed with this sputterer or with the CVC E-Beam evaporator. -Process wafers/substrates up to 6" -Computer-controlled planetary system for uniform deposition -Two 3" and two 8" sputter guns

Capabilities Deposition - Metal Deposition - Aluminum Chromium - Copper Gold Iron Nickel Palladium Platinum Ruthenium

$55,000 to 110,000 84

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EVAPORATION

• Metal atom to be deposited are held in a tungsten coil which carries huge currents

• The metal evaporates under intense heat and finally deposits on a relatively cooler wafer.

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EPITAXIAL DEPOSITION THERMAL EVAPORATORS

• Denton SJ20C

• SOURCE: University of UTAH

• Description

• 4 source hearth

• Film thickness monitor/deposition controller

$30,000 86

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http://department.fzu.cz/surfaces/mbe/soubory/mbe/mbe_method.htm

The MBE process during the epilayer growth on GaAs substrate. Typical working temperatures of the effusion cells :

Ga ~1000oC, Al ~1100oC, As ~300oC, Be ~900oC, Si ~1100oC. 87

EPITAXIAL DEPOSITION MOLECULAR BEAM EPITAXY

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WET ETCHING

• Various mixtures of wet-chemical acid solutions are used for wet etching.

• The primary acids used are sulphuric , hydrofluoric (HF), hydrochloric (HCl) and phosphoric . As in silicon processing, hydrogen peroxide is used with sulphuric acid, and ammonium hydroxide provides a caustic etch.

• A cyanide solution (sodium or potassium) is also used for etching aluminium.

• As an alternative to wet etching, a plasma etching and process is used.

• The reactor configurations and reactant gases are very similar to those utilized in silicon device processing.

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PLASMA ETCHING

• In this form of etching, plasma is used to produce chemically reactive gases which are then made to react with the material to be etched on the wafer substrate!

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PLASMA ETCHING OXFORD PLASMALAB 100

Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter under variable temperatures. Applications: High-temperature InP etching Physical milling of most III-V semiconductors Reactive etching of III-V semiconductors Reactive etching of metals Example Use: III-V material and Metals etch

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PLASMA ETCHING OXFORD PLASMALAB 100

Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter under variable temperatures. Applications: High-temperature InP etching Physical milling of most III-V semiconductors Reactive etching of III-V semiconductors Reactive etching of metals Example Use: III-V material and Metals etch

$29,000

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PLASMA ETCHING ICP Metal Etcher-Unaxis SHUTTLELINE ICP

Chlorine-based system utilizing Boron Trichloride and Chlorine to etch metals and III-V group materials on planar substrates up to 150mm in diameter. ICP: 2.0 MHz 2500W RF: 13.56 MHz 300W Gases: Cl2, Ar, BCl3, SF6, O2 Applications: Anisotropic etching of metal films Etches Chromium, Aluminum, and other Chlorine-based etchable metals Other materials etchable by SF6, Ar, and O2 Demonstrated Use: Al, Cr and GaAs quantum dots and SiC etch

$120,000

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PLASMA ETCHING SAMCO RIE200iP

Manufacturer: SAMCO International Classification: Dry Etch Equipment: Inductively coupled plasma etching Uses: Etching of InP, GaAs, and other III-V compounds, SiNx, SiO2, and photoresist Etch gases Cl2, SiCl4, BCl3, Ar, CF4, CHF3, and O2

http://www.princeton.edu/mnfl/the-tool-list/samco-rie200ip/

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METROLOGY AND INSPECTION EQUIPMENT

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SURFACE PROFILER Tencor Sono Gauge 300

For single point measurement of Wafer thickness,

Aluminum film thickness and Sheet resistance of metal film. Wafer Diameter : 3”, 4”, 5” and 6” Substrate Thickness : 250-700 μm Sheet Resistance : 1 to 1999 Ω/sq. Minimum Metal Film Thickness : 100Å

$6,800

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PARAMETER ANALYSER HP 4145B Semiconductor Parameter Analyzer

Specs

• In/Out Ports : 8 • Source/Monitor Unit : 4 • Voltage Source : 2 • Voltage Monitor : 2 • Voltage Resolution : 1 mV • Current Resolution : 1 pA • Maximum Voltage : 100 V • Measurement Function : DC current through voltage-biased or

current-biased devices

$4,500

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PROBE STATION Signatone S-1160 Manual probe station

Specs

• Microscope of 10x to 70x magnification • 4 Micropositioners in S-926 series • X-Y-Z motion : 254 microns per knob revolution • Tip diameter : 4 microns • Vacuum chuck • Max. accept a 6”wafer • Temperature from room temp. to 300℃

$5,500

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STRESS MEASUREMENT SYSTEM Film Stress Measurement System SMSi 3800

Measure the change of curvature induced in a sample due to the

deposited film on a reflected substrate. Measure 1-D stress and produce 3-D topographical profile Specs • Wafer size : 2” to 8” • Thickness Limit : less than 11 mm • Statistical process control and spreadsheet compatibility • Automatic segmentation calculation

$3,500 98

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WET BENCH Amerimade 8ft Polypro Wet Bench

Construction: Polypro wet bench - Length: 8ft - Teflon Heated Bath Tanks (Qty 3): a. can handle up to 6" wafers b. Dims: 7"x10"x10" (WxDxH) c. Immersion heater at bottom of tank d. Temperature controllers for each tank - Teflon Static Bath Tank (Qty 1): a. can handle up to 6" wafers b. Dims: 7"x10"x10" (WxDxH) c. Immersion heater at bottom of tank d. Temperature controllers for each tank - Teflon Rinse Sinks (Qty 2): a. Dims: 5.5"x9"x5" (WxDxH) DI Spray Gun - 1 Amerimade Bath Timer - 2 Photohelic Exhaust Monitors - 5 Tank Fill Buttons - 4 Alarm Buttons

$10,000

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WET BENCH JST 4ft Stainless Steel Wet Bench

Model: JST STA00115 - Overall Length: 4ft - Dimensions: 48"x50"x82" (LxWxH) - All tanks sized for single 4"/100mm cassette - All tanks programmed via PLC controller - Automatic wafer handling (cassette) via robot - Heated Recirculating Stainless Steel Tank: a. Tank is heated and recirculating b. White Knight Pneumatic Pump c. Tank Lid d. Tank dimensions: 7.5"x7.25"x15" (LxWxH) e. Condenser - Quick Dump Rinse (QDR) Tank: a. Dimensions: 7.5"x7.5"x5" (LxWxH) b. Controlled via PLC controller c. Tank Lid - Static Stainless Steel Tank: a. Tank dimensions: 7.5" x 7.5" x 7" (LxWxH) b. On/Off Drain

$10,000

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MICROSCOPES AMERICAN OPTICAL STEREO ZOOM MICROSCOPE 7X - 42X

Unit Price $ 525.00

Number of Units 1

Manufacturer American Optical

Model 570

Binocular Angle 45°

Eyepieces

Magnification 10 X

Magnification Range 7 X - 42 X

Zoom Range 0.7 X - 4.2 X

Illumination Type None

Stand Type None

Condition Very Good $525

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MICROSCOPES OLYMPUS GSWH20X/12.5

Unit Price $ 3,000.00

Number of Units 1

Manufacturer Olympus

Model SZ1145 CHI

Binocular Angle 45°

Eyepieces

Model GSWH20X/12.5

Magnification 20 X

Field Number 12 mm

Focusing YES

Magnification

Range

36 X - 220 X

Zoom Range 1.8 X - 11.0 X

Illumination Type Coaxial

Stand Type Incident Light (Type A)

$3000

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Cost Model

• HR cost: US $ 14,000 / year

• Minimum Equipment cost: US $ 336,750

US $ 350,750

• Shipment Cost not included

• Most Equipment are used

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Technology

Fab presentaion