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Compound Semiconductor Wafer Processing Facility
Citation preview
WAFER PROCESSING EQUIPMENT
AND
CLEAN ROOM INVENTORY
FOR A RESEARCH BASED IC FABRICATION FACILITY
SAMI UR REHMAN
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Difference between Si wafer processing and compound (III/V) wafer processing
Oxidation Silicon has a natural oxide while compound semiconductors do not (deposition required). Compound semiconductor requires epitaxial deposition techniques which are quiet expensive!
Stability
Most of these compound semiconductors are not stable at high temperatures unlike Si. For Si, one would therefore make MOSFET kind of structures.
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Lattice Constants The first and principal difference between a Si
and a GaAs substrate is the respective lattice constants. Crystalline materials (thin films) which will be deposited on top of such substrates will have to take this into account. Etching
Compound semiconductors like GaAs also requires a complex Chlorine based etch process unlike Si (F based etch).
Difference between Si wafer processing and compound (III/V) wafer processing
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WHAT IS A CLEAN ROOM?
• A clean-room or clean room is an environment, typically used in manufacturing and scientific research, that has a low level of environmental pollutants such as dust, airborne microbes, aerosol particles and chemical vapors (Wikipedia)
• What matters is Particle size and particle number
• The standard is called: FED-STD-209 E
• This standard was cancelled on Nov 2011
• Standardizing Agency: U.S. General Services Administration (GSA)
• Replaced by ISO 14644-1
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CLEAN ROOM CLEAN ROOM STANDARDS
Particle Counters are used to determine the air quality by counting and sizing the number of particles in the air. This information is useful in determining the amount of particles inside a building or in the ambient air It also is useful in understanding the cleanliness level in a controlled environment.
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Cost Analysis
• Quotations have been sent
• SANCO
• Rough estimates of the equipment have been obtained from:
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CLEAN ROOM
PARTICLE COUNTERS
Manufacturer Capovani Brothers Inc
Model PARTICLE MEASURMENT SYSTEMS LPS A-310
Price $ 7,350.00 (each)
Year of
Manufacture
2001
Dimensions Width8.750 in (22.2 cm) Depth18.000 in (45.7 cm) H
eight7.000 in (17.8 cm)
Weight 30 lb (14 kg)
Accessories/Othe
r Information
Maximum Number of Channels =4
Channel Sizes= 0.3, 0.5, 1.0, 5.0 µm
Light Source=HeNe Multimode, Passive Cavity
$7,350
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CLEAN ROOM
PARTICLE COUNTERS
Manufacturer Pacific Scientific
Model MET ONE
Price $ 4,250.00
Year of
Manufacture
2001
Dimensions Width13.000 in (33.0 cm) Depth12.000 in (30.5 cm) Heig
ht7.000 in (17.8 cm)
Weight 30 lb (14 kg)
Accessories/Other
Information
Part no.: 331-3-1-AL
Particle size: 0.3 to 10 Micron
$4,250
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CLEAN ROOM
AIR CONDITIONER/AIR FLOW CONTROLLER
Manufacturer Air Control Inc.
Model VLF CART
Price $ 3,250.00
Year of Manufacture 1998
Dimensions Width 74.000 in (188.0 cm)
Depth 21.000 in (53.3 cm)
Height 74.000 in (188.0 cm)
Weight 5,459 lb (2,476 kg)
Accessories/Other
Information
Unit contains a 9W X 10H array of
stainless steel cubicles (6.25"W x 4"H
x 11"D)
Blower: (2) EBM's STD
Prefilter #: (2) 16 x 20 x 1
Hepa Filter #: (1) 18 x 48 x 3 $3,250
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CLEAN ROOM
AIR CONDITIONER/AIR FLOW CONTROLLER
Manufacturer Air Control Inc.
Model AirPod
Price
Year of Manufacture
Dimensions Width: AirPod I: 62.50”, AirPod II: 80.50”, AirPod III: 104.50” Height: 31.00” Depth: 31.00”
Weight Weight (lbs): AirPod I: 312, AirPod II:
394, AirPod III: 455
Accessories/Other
Information
Nominal Air flow: 2500 CFM (3/4 HP), 5000 CFM (3HP), 4000 CFM (3HP with AD after-filter). Blower Pkg (HP): AirPod I: 2-speed forward curve, direct drive; AirPod II & III: Dynamically balanced, non-sparking, motor/blowers. (Optional 2-speed motor/blower available for AirPod II.) Electrical: AirPod I, standard: 115/1/60, 11.4 amps, 3/4 HP; AirPod II & III, standard: 208-230/460/3/60, 7.8-7.2/4 amps, 3 HP; optional: 230/1/60 11.7 amps, 3 HP.
$3,000
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IC FABRICATION PHILOSOPHY!
Deposition
Adding layer onto wafer! Adding impurities in
wafer!
Implantation
Removing an added layer!
Etching
Photolithography
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III/V Group ingot production
Similar to the silicon ingot growth process, elemental forms of III and V group elements, plus small quantities of dopant material-silicon, tellurium or zinc-are reacted at elevated temperatures to form ingots of doped single- crystal III/V material like GaAs.
Quartz Tube
Rotating Chuck
Seed Crystal
Growing Crystal
(boule)
RF or Resistance
Heating Coils
Molten Silicon
(Melt)
Crucible
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Photomask Creation
• The photomask is a copy of the circuit pattern, drawn on a glass plate coated with a metallic film.
• The glass plate lets light pass, but the metallic film does not.
• Due to increasingly high integration and miniaturization of the pattern, the size of the photomask is usually magnified four to ten times the actual size.
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PHOTOLITHOGRAPHY
Wafer processing consists of a sequence of
additive and subtractive steps with patterning!!!!!
oxidation
deposition
ion implantation
etching lithography
Lithography refers to the process of transferring a circuit pattern, embedded on a mask, to the surface of the wafer
Equipment, materials, and processes needed: • A mask (for each layer to be patterned) with the desired pattern
• A light-sensitive material (called photoresist) covering the wafer so as to receive the pattern
• A light source and method of projecting the image of the mask onto the photoresist (“printer” or “projection stepper” or “projection scanner”)
• A method of “developing” the photoresist, that is selectively removing it from the regions where it was exposed
Photolithography is a process analogous to developing film in a darkroom
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PHOTOLITHOGRAPHY STEPS
• 1 # PRE BAKE THE WAFER
Wafer is preheated to about 200 - 250 degrees C in a bake oven. The purpose of this step is to ensure that the wafer is completely dry. Any moisture on the wafer surface would interfere with the photolithography process, causing it to yield poor results.
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PHOTOLITHOGRAPHY STEPS
• 2 # PHOTORESIST APPLICATION AND SPINNING
• The wafer is placed on the wafer chuck in the center of the Photoresist Spinner. After properly adjusting the wafer on the spinner, photo resist material is applied onto the surface of the wafer and is spun so that photo resist evenly distributes on the wafer
• Using the Nitrogen Gun,
now the wafer surface is
Blown to remove any dust
particles.
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PHOTOLITHOGRAPHY STEPS Photoresist Raw Materials
http://www.mitsuichemicals.com/photoresist.htm
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PHOTOLITHOGRAPHY STEPS Photo resist properties
http://www.cleanroom.byu.edu/photoresists.phtml
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Photoresist Spin Coater
Vacuum
PR
EBR
Wafer
Chuck
Water Sleeve
Drain Exhaust
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Photoresist Applying
Spindle
PR dispenser nozzle
Chuck
Wafer
To vacuum pump 20
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Photoresist Suck Back
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Photoresist Spin Coating
Spindle
To vacuum pump
PR dispenser nozzle
Chuck
PR suck back
Wafer
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Edge Bead Removal
Spindle
To vacuum pump
Chuck
Wafer Solvent
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Edge Bead Removal
Spindle
To vacuum pump
Chuck
Wafer Solvent
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Optical Edge Bead Removal Exposure
Spindle
Chuck
Wafer
Photoresist
Light source
Light beam
Exposed Photoresist
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PHOTOLITHOGRAPHY STEPS
• 3 # SOFT BAKE
• The wafer is placed into the Soft-Bake Oven for 30 minutes.
• The purpose of the soft bake is to semi-harden the photoresist
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Methods of Soft Bake
• Hot plates
• Convection oven
• Infrared oven
• Microwave oven
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Baking Systems
Heater
Vacuum
Wafer
Heater
Heated N 2
Wafers
MW Source
Vacuum Wafer
Photoresist
Chuck
Hot plate Convection oven Microwave oven 36
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Hot Plates
• Widely used in the industry
• Back side heating, no surface “crust”
• In-line track system
Heater
Wafer
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PHOTOLITHOGRAPHY STEPS
• 4 # EXPOSE TO UV LIGHT
• carefully place the wafer on the wafer chuck of the Aligner
• When the wafer has been properly aligned to the mask, expose it to UV light
• the exposure time should be set according to the particular type of photo resist and wattage of the bulb being used.
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Alignment
P-Well
n+ n+
Polysilicon
Photoresist
Gate Mask
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Exposure Gate Mask
P-Well
n+ n+
Polysilicon
Photoresist
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Ready for Post Exposure Bake
P-Well
n+ n+
Polysilicon
Photoresist
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PHOTOLITHOGRAPHY STEPS
• 5 # DEVELOPMENT
• The type of developer solution used is determined by the type of photoresist chosen.
• Then we check the developer for the recommended development time. Typically, this will be around 30 seconds
• Then the wafer is immersed in the developer and agitate mildly until the time has expired.
• Finally the wafer is rinsed with ionized water
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Schematic of a Spin Developer
Vacuum
Developer Wafer
Chuck
Water sleeve
Drain
DI water
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Applying Development Solution
Spindle
Chuck
Wafer
Exposed Photoresist
Development solution dispenser nozzle
To vacuum pump 44
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Applying Development Solution
Spindle
To vacuum pump
Chuck
Wafer
Exposed Photoresist
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Spindle
To vacuum pump
Chuck
Wafer
Patterned photoresist
Developer Spin Off
Edge PR removed
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DI Water Rinse
Spindle
To vacuum pump
Chuck
Wafer
DI water dispenser nozzle
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Spin Dry
Spindle
To vacuum pump
Chuck
Wafer
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Ready For Hard Bake
Spindle
Chuck
Wafer
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Development Profiles
PR PR
Substrate Substrate
PR
Substrate
PR
Substrate
Normal Development
Under Development Over Development
Incomplete Development
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Developer Solution
•+PR normally uses weak base solution
•The most commonly used one is the tetramethyl ammonium hydride, or TMAH ((CH3)4NOH).
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Developer Solutions
Positive PR Negative PR
Developer TMAH Xylene
Rinse DI Water n-Butylacetate
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PHOTOLITHOGRAPHY STEPS
• 6 # HARD BAKE THE WAFER
• The wafer is placed into the Hard Bake oven now which should be preheated to between 120-130 degrees C.
• The wafers should remain in the hard bake oven for 30 minutes. This prepares the wafer for the next processing step.
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Types of Photoresist
Negative Photoresist
• Becomes insoluble after exposure
• When developed, the unexposed parts dissolved.
• Cheaper
Positive Photoresist
• Becomes soluble after exposure
• When developed, the exposed parts dissolved
• Better resolution 54
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Mask/reticle
Exposure
After Development
Negative Photoresist
UV light
Positive Photoresist
Substrate
Substrate
Substrate
Photoresist
Negative and Positive Photoresists
Substrate
Photoresist
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Comparison of Photoresists
- PR
Film
+ PR
Film
Substrate Substrate
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Wafer In
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Pre-bake and Primer Vapor Coating
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Photoresist Spin Coating
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Soft Bake
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Alignment and Exposure
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Post Exposure Bake (PEB)
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Development
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Hard Bake
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Wafer out
Hot Plate Developer dispenser Track
Hot Plate Spin Station
Stepper
Track Robot
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Resolution
•The achievable, repeatable minimum feature size
•Determined by the wavelength of the light and the numerical aperture of the system. The resolution can be expressed as
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Resolution
NA
KR
1
• K1 is the system constant
is the wavelength of the light
NA = 2 ro/D, is the numerical aperture
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Numerical Aperture
• NA is the ability of a lens to collect diffracted light
• NA = 2 r0 / D
– r0 : radius of the lens
– D = the distance of the object from the lens
• Lens with larger NA can capture higher order of diffracted light and generate sharper image.
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To Improve Resolution
• Increase NA
• Larger lens, could be too expensive and unpractical
• Reduce DOF and cause fabrication difficulties
• Reduce wavelength
• Need develop light source, PR and equipment
• Limitation for reducing wavelength
• UV to DUV, to EUV, and to X-Ray
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Depth of focus
• The range that light is in focus and can achieve good resolution of projected image
• Depth of focus can be expressed as:
2
2
)(2 NA
KDOF
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Depth of Focus
• Smaller numerical aperture, larger DOF
• Disposable cameras with very small lenses
• Almost everything is in focus
• Bad resolution
• Prefer reduce wavelength than increase NA to improve resolution
• High resolution, small DOF
• Focus at the middle of PR layer
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Photolithography MASK ALLIGNER
Karl Suss MA-6 Mask Aligner
Description Can handle Si and Compound
semiconductor wafers
Up to 6"in size
240 nm to 365 nm wavelength.
1:1 exposure system
Maximum wafer thickness:
4.3mm
Alignment accuracy of +-0.5um
$69,000
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Photolithography MASK ALLIGNER
Mask-aligner EV-420
Description Contact mask-aligner for optical lithography Double side exposure Lamp power: 350 W Illumination spectrum: no filters
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Photolithography MASK ALLIGNER
Manufacturer SussMicrotec
Model BLE RESPECT 600
Weight 880 lb (399 kg)
Accessories/ Other Specifications
400 V 16 A 50 Hz
System features
Programmable controller
PC with windows NT4SP6 and
applications program Respect
1.0b0087/1.1b0002
Touch screen
RS 232 Interface
Vacuum monitoring
External cabinet exhaust
connection
Automatic exhaust control
Media control panel
Silicon and compound
semiconductor wafers
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Photolithography SPINNERS
Solitec 5100 LVT •Provides spin processing of single wafers/substrates
of up to 225mm diagonal •Tools for loading and centering for:
4 inch (100 mm) substrate
2 inch (50 mm) substrate
Solitic is the main manufacturer of this equipment, Various models from the
same Company shown below
$30,000
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Photolithography BAKE OVENS
Yes 450pb oven Description: The 450PB is a high temperature vacuum oven using a programmable temperature controller and programmed vacuum and nitrogen flow cycles for curing of polyimide films. The unit features filtered heated nitrogen purging from the entire surface of the roof through the floor of the chamber. This flow acts to clean the wafers during the process.
Specs Capacity: Up to two boats of 6 inch wafers Ramp: 8°C/min Cool-down: 1-2°C/min Max Temperature: 400°C Idle Temperature: 50°C
$22,500
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WAFER PROCESSING
Deposition
Etching
Ion implantation
•CVD
•PECVD
•PVD
•SPUTTERING
•EVAPORATION
•MBE
•DRY ETCHING
•WET ETCHING
•DIFFUSION
•ANNEALING
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CHEMICAL VAPOR DESPOSITION
Chemical Vapor Deposition is the formation of a
non-volatile solid film on a substrate by the reaction
of vapor phase chemicals (reactants) that contain the
required constituents.
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CHEMICAL VAPOR DESPOSITION
• Gases to be reacted are entered into the CVD chamber and react to produce the desired material to be deposited on the wafer under extremely high temperature.
• Wafer temp is cooler than the furnace
• Changing the reacting gases we can produce any material to be deposited
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PECVD
• PECVD uses two electrodes one of which contains the wafer
• A strong electric field b/w the electrodes ignites the plasma which decomposes the reactant gases into the material to be deposited on the wafer substrate.
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SPUTTERING
• High energy plasma knocks metal atoms out of its crystalline structure and are deposited on the wafer substrate!
• Mainly used for
creating metal
contacts (Aluminum,
Titanium etc)
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SPUTTERING PVD75 RF Sputterer
Description •The RF sputterer can be used to deposit many dielectrics.
•Sputter two or more dissimilar materials simultaneously
•for complete control of film stoichiometry (co-deposition)
•Integrated touch screen control
•Single substrate up to 12" diameter
•Multiple substrate up to 4" diameter
•Substrate fixture rotation up to 20rpm
$60,000
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SPUTTERING ARC-12M sputtering system
Gases available: Ar, O2 & N2 - DC sputtering power source: 2 x 250W - RF sputtering power source: 600W at 13.56MHz - Chamber pressure: 5x10-6 torr - Substrate size: 2”, 4” wafer or square glass, or specimen - Targets available: Ag, Al, Al/Si (1%), Au, Cu, Cr, Hf, Mo, Pt, SnO2, SiN, Ti, TiW
http://www.mff.ust.hk/Eq_Sputter.htm
$55,000
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SPUTTERING CVC DC Sputterer
Description
The DC sputterer is used to coat samples with metals. Metal coatings are usually performed with this sputterer or with the CVC E-Beam evaporator. -Process wafers/substrates up to 6" -Computer-controlled planetary system for uniform deposition -Two 3" and two 8" sputter guns
Capabilities Deposition - Metal Deposition - Aluminum Chromium - Copper Gold Iron Nickel Palladium Platinum Ruthenium
$55,000 to 110,000 84
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EVAPORATION
• Metal atom to be deposited are held in a tungsten coil which carries huge currents
• The metal evaporates under intense heat and finally deposits on a relatively cooler wafer.
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EPITAXIAL DEPOSITION THERMAL EVAPORATORS
• Denton SJ20C
• SOURCE: University of UTAH
• Description
• 4 source hearth
• Film thickness monitor/deposition controller
$30,000 86
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http://department.fzu.cz/surfaces/mbe/soubory/mbe/mbe_method.htm
The MBE process during the epilayer growth on GaAs substrate. Typical working temperatures of the effusion cells :
Ga ~1000oC, Al ~1100oC, As ~300oC, Be ~900oC, Si ~1100oC. 87
EPITAXIAL DEPOSITION MOLECULAR BEAM EPITAXY
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WET ETCHING
• Various mixtures of wet-chemical acid solutions are used for wet etching.
• The primary acids used are sulphuric , hydrofluoric (HF), hydrochloric (HCl) and phosphoric . As in silicon processing, hydrogen peroxide is used with sulphuric acid, and ammonium hydroxide provides a caustic etch.
• A cyanide solution (sodium or potassium) is also used for etching aluminium.
• As an alternative to wet etching, a plasma etching and process is used.
• The reactor configurations and reactant gases are very similar to those utilized in silicon device processing.
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PLASMA ETCHING
• In this form of etching, plasma is used to produce chemically reactive gases which are then made to react with the material to be etched on the wafer substrate!
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PLASMA ETCHING OXFORD PLASMALAB 100
Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter under variable temperatures. Applications: High-temperature InP etching Physical milling of most III-V semiconductors Reactive etching of III-V semiconductors Reactive etching of metals Example Use: III-V material and Metals etch
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PLASMA ETCHING OXFORD PLASMALAB 100
Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter under variable temperatures. Applications: High-temperature InP etching Physical milling of most III-V semiconductors Reactive etching of III-V semiconductors Reactive etching of metals Example Use: III-V material and Metals etch
$29,000
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PLASMA ETCHING ICP Metal Etcher-Unaxis SHUTTLELINE ICP
Chlorine-based system utilizing Boron Trichloride and Chlorine to etch metals and III-V group materials on planar substrates up to 150mm in diameter. ICP: 2.0 MHz 2500W RF: 13.56 MHz 300W Gases: Cl2, Ar, BCl3, SF6, O2 Applications: Anisotropic etching of metal films Etches Chromium, Aluminum, and other Chlorine-based etchable metals Other materials etchable by SF6, Ar, and O2 Demonstrated Use: Al, Cr and GaAs quantum dots and SiC etch
$120,000
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PLASMA ETCHING SAMCO RIE200iP
Manufacturer: SAMCO International Classification: Dry Etch Equipment: Inductively coupled plasma etching Uses: Etching of InP, GaAs, and other III-V compounds, SiNx, SiO2, and photoresist Etch gases Cl2, SiCl4, BCl3, Ar, CF4, CHF3, and O2
http://www.princeton.edu/mnfl/the-tool-list/samco-rie200ip/
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METROLOGY AND INSPECTION EQUIPMENT
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SURFACE PROFILER Tencor Sono Gauge 300
For single point measurement of Wafer thickness,
Aluminum film thickness and Sheet resistance of metal film. Wafer Diameter : 3”, 4”, 5” and 6” Substrate Thickness : 250-700 μm Sheet Resistance : 1 to 1999 Ω/sq. Minimum Metal Film Thickness : 100Å
$6,800
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PARAMETER ANALYSER HP 4145B Semiconductor Parameter Analyzer
Specs
• In/Out Ports : 8 • Source/Monitor Unit : 4 • Voltage Source : 2 • Voltage Monitor : 2 • Voltage Resolution : 1 mV • Current Resolution : 1 pA • Maximum Voltage : 100 V • Measurement Function : DC current through voltage-biased or
current-biased devices
$4,500
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PROBE STATION Signatone S-1160 Manual probe station
Specs
• Microscope of 10x to 70x magnification • 4 Micropositioners in S-926 series • X-Y-Z motion : 254 microns per knob revolution • Tip diameter : 4 microns • Vacuum chuck • Max. accept a 6”wafer • Temperature from room temp. to 300℃
$5,500
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STRESS MEASUREMENT SYSTEM Film Stress Measurement System SMSi 3800
Measure the change of curvature induced in a sample due to the
deposited film on a reflected substrate. Measure 1-D stress and produce 3-D topographical profile Specs • Wafer size : 2” to 8” • Thickness Limit : less than 11 mm • Statistical process control and spreadsheet compatibility • Automatic segmentation calculation
$3,500 98
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WET BENCH Amerimade 8ft Polypro Wet Bench
Construction: Polypro wet bench - Length: 8ft - Teflon Heated Bath Tanks (Qty 3): a. can handle up to 6" wafers b. Dims: 7"x10"x10" (WxDxH) c. Immersion heater at bottom of tank d. Temperature controllers for each tank - Teflon Static Bath Tank (Qty 1): a. can handle up to 6" wafers b. Dims: 7"x10"x10" (WxDxH) c. Immersion heater at bottom of tank d. Temperature controllers for each tank - Teflon Rinse Sinks (Qty 2): a. Dims: 5.5"x9"x5" (WxDxH) DI Spray Gun - 1 Amerimade Bath Timer - 2 Photohelic Exhaust Monitors - 5 Tank Fill Buttons - 4 Alarm Buttons
$10,000
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WET BENCH JST 4ft Stainless Steel Wet Bench
Model: JST STA00115 - Overall Length: 4ft - Dimensions: 48"x50"x82" (LxWxH) - All tanks sized for single 4"/100mm cassette - All tanks programmed via PLC controller - Automatic wafer handling (cassette) via robot - Heated Recirculating Stainless Steel Tank: a. Tank is heated and recirculating b. White Knight Pneumatic Pump c. Tank Lid d. Tank dimensions: 7.5"x7.25"x15" (LxWxH) e. Condenser - Quick Dump Rinse (QDR) Tank: a. Dimensions: 7.5"x7.5"x5" (LxWxH) b. Controlled via PLC controller c. Tank Lid - Static Stainless Steel Tank: a. Tank dimensions: 7.5" x 7.5" x 7" (LxWxH) b. On/Off Drain
$10,000
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MICROSCOPES AMERICAN OPTICAL STEREO ZOOM MICROSCOPE 7X - 42X
Unit Price $ 525.00
Number of Units 1
Manufacturer American Optical
Model 570
Binocular Angle 45°
Eyepieces
Magnification 10 X
Magnification Range 7 X - 42 X
Zoom Range 0.7 X - 4.2 X
Illumination Type None
Stand Type None
Condition Very Good $525
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MICROSCOPES OLYMPUS GSWH20X/12.5
Unit Price $ 3,000.00
Number of Units 1
Manufacturer Olympus
Model SZ1145 CHI
Binocular Angle 45°
Eyepieces
Model GSWH20X/12.5
Magnification 20 X
Field Number 12 mm
Focusing YES
Magnification
Range
36 X - 220 X
Zoom Range 1.8 X - 11.0 X
Illumination Type Coaxial
Stand Type Incident Light (Type A)
$3000
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Cost Model
• HR cost: US $ 14,000 / year
• Minimum Equipment cost: US $ 336,750
US $ 350,750
• Shipment Cost not included
• Most Equipment are used
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