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Cu Cu 2 ZnSnS ZnSnS 4 4 (CZTS) Thin Films for (CZTS) Thin Films for Solar Cell Application Solar Cell Application Dr. Ramesh J. Deokate Vidya Pratishthan’s Arts, Science and Commerce College, Baramati MS-413 133. VPASC

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CuCu22ZnSnSZnSnS44 (CZTS) Thin Films for (CZTS) Thin Films for

Solar Cell ApplicationSolar Cell Application

Dr. Ramesh J. DeokateVidya Pratishthan’s

Arts, Science and Commerce College,

Baramati

MS-413 133.VPASC

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Outline of PresentationOutline of Presentation

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Introduction of Cu2ZnSnS4(CZTS)

Synthesis of Cu2ZnSnS4 Thin films Characterization techniques:

X-ray diffraction (XRD ) Scanning Electron Microscopy (SEM)Theromoemf power (TEP)Resistivity measurement Contact angle and Band gap study

Conclusions

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Properties of CuProperties of Cu22ZnSnSZnSnS44 (CZTS) (CZTS)

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Inexpensive, simple and convenient for large area deposition.

Neither requires high quality targets and/or substrates nor it requires vacuum at any stage, which is a great advantage if the technique is to be scaled up for industrial applications.

 The deposition rate and the thickness of the films can be easily controlled over a wide range by changing the spray parameters.

Operating at moderate temperatures (373-773 K), spray pyrolysis can produce films on less robust materials.

It can be used to make layered films and films having composition gradients throughout the thickness.

This method provide one step synthesis without no impurities.

Schematic representation of spray pyrolysis deposition apparatus

MethodologyMethodology

Advantages of SPTAdvantages of SPT

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Chemicals used and preparative parametersPrecursor solution (Cd(CH3COO)2.2H2O) (0.025)

(Zn(CH3COO)2 (0.025) SnCl4 (0.025) 4SC(NH2)2 (0.2)

Total quantity 80 ml

Deposition temp. 623 K

Deposition period 20 min.

Substrate Glass

Reaction mechanism

Preparation of CuPreparation of Cu22ZnSnSZnSnS4 4 films by films by Spray pyrolysis techniqueSpray pyrolysis technique

2Cu(CH3COO) + Zn(CH3COO)2+ SnCl4+ 8H2O+ 4SC(NH2)2 → Cu2ZnSnS4+ 4CO2↑+ 4CH3COOH↑+ 4NH4Cl↑+4NH3↑

2Cu(CH3COO) + Zn(CH3COO)2+ SnCl4+ 8H2O+ 4SC(NH2)2 → Cu2ZnSnS4+ 4CO2↑+ 4CH3COOH↑+ 4NH4Cl↑+4NH3↑

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Film thickness Film thickness measurementsmeasurements

Variation of Cu2ZnSnS4 film thickness for different solution quantity.

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X-Ray diffraction (XRD) X-Ray diffraction (XRD) studiesstudies

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Scanning Electron Micrograph (SEM)Scanning Electron Micrograph (SEM)

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Wettability StudyWettability Study

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Increasing film thickness the band gap energy increases from 1.59 to 1.67 eV.

Increasing film thickness the band gap energy increases from 1.59 to 1.67 eV.

1.0 1.5 2.0 2.5 3.0 3.5 4.0

2.0

2.4

2.8

3.2

3.6

4.0

log

cm

)

1000/T (K-1)

244 nm 375 nm 568 nm 754 nm

The resistivity decreases with increase in temperature which is the indication of typical

semiconductor characteristic.

The resistivity decreases with increase in temperature which is the indication of typical

semiconductor characteristic.

Optical study and Electrical ResistivityOptical study and Electrical Resistivity

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Summary and Summary and conclusionsconclusions The CZTS thin films have been successfully deposited by a simple

and inexpensive spray pyrolysis technique.

The thickness of CZTS films affects structural, optical and electrical properties.

The crystallinity and the grain size increased with film thickness. Optical absorption study revealed indirect direct transition with band gap energy in the range 1.6 to 1.67 eV, depending on film thickness.

The electrical conductivity and contact angle were enhanced with the film thickness.

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AcknowledgemeAcknowledgementnt

Authors are grateful to University of Pune (UoP) for financial support through the BCUD scheme no. 36-207/2012-14 (SR).

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Thank YouThank YouThank YouThank You