8
By: Jean Hamby and Karthikvel Rathinavel ECE423/523 Homework 4 Folded Cascode Design Introduction: We designed an operational amplifier with single stage folded cascode topology. For this homework we were required to meet the required specifications for different corner cases (normal, slow and fast). We noticed that the biasing circuit node voltages changed with the different temperatures (T = 27, -40, 100). Our initial design approach was to make a good design (which completely comfortably met all the specifications) for the typical case (C= 6pF and Temp= 27 C) so that any change in temperature would not cause big changes in the biasing. Schematic: Simulated Specifications: Parameters For 27 C For 100 C For -40 C Gain 54.675 dB 52.536 dB 50.19 Bandwidth 254.83 MHz 200.06 136.42 Phase Margin 64.72 72.06 64.06 Load Capacitor 6p F 7.2p F 4.8p F Power consumption 13.714 mW 13.3308 mW 14.18 mW Voltage Swing 1.68089 V 1.46279 V 1.815317 V Comments: We couldn’t meet the required specifications for Power consumption primarily because the due to change in different temperatures, our transistors mobility goes up. This results in lowering (in the case of bias NMOS) and raising (in the case of PMOS) of the bias nodes. We concentrated on meeting bandwidth for slow case because there was a significant drop in its bandwidth for which we had to increase the gm of the input transistors, by channeling more current through the folded branch. This was achieved but increase in bandwidth resulted in increase in the power consumption. Since there is gain bandwidth tradeoff we could have potentially decreased high gain (in typical case) and as result raised the bandwidth ever more such that the bandwidth specification could have been accomplished for all three corner cases.

Ece523 folded cascode design

Embed Size (px)

Citation preview

Page 1: Ece523 folded cascode design

By: Jean Hamby and Karthikvel Rathinavel ECE423/523 Homework 4 Folded Cascode Design

Introduction: We designed an operational amplifier with single stage folded cascode topology. For this homework we were required to meet the required specifications for different corner cases (normal, slow and fast). We noticed that the biasing circuit node voltages changed with the different temperatures (T = 27, -40, 100). Our initial design approach was to make a good design (which completely comfortably met all the specifications) for the typical case (C= 6pF and Temp= 27 C) so that any change in temperature would not cause big changes in the biasing. Schematic:

Simulated Specifications: Parameters For 27 C For 100 C For -40 C

Gain 54.675 dB 52.536 dB 50.19 Bandwidth 254.83 MHz 200.06 136.42

Phase Margin 64.72 72.06 64.06 Load Capacitor 6p F 7.2p F 4.8p F

Power consumption 13.714 mW 13.3308 mW 14.18 mW Voltage Swing 1.68089 V 1.46279 V 1.815317 V

Comments: We couldn’t meet the required specifications for Power consumption primarily because the due to change in different temperatures, our transistors mobility goes up. This results in lowering (in the case of bias NMOS) and raising (in the case of PMOS) of the bias nodes. We concentrated on meeting bandwidth for slow case because there was a significant drop in its bandwidth for which we had to increase the gm of the input transistors, by channeling more current through the folded branch. This was achieved but increase in bandwidth resulted in increase in the power consumption. Since there is gain bandwidth tradeoff we could have potentially decreased high gain (in typical case) and as result raised the bandwidth ever more such that the bandwidth specification could have been accomplished for all three corner cases.

Page 2: Ece523 folded cascode design

DC Gain and Phase Margin: T= 27C, Cload = 6pF

Output Swing: T = 27, Cload = 6pF

Page 3: Ece523 folded cascode design

DC Gain and Phase Margin: T=100C, Cload = 7.2pF

Output Swing: T=100, C=7.2pF

Page 4: Ece523 folded cascode design

DC Gain and Phase Margin: T=-40C, Cload = 4.8pF

Comments on low unity gain bandwidth: In our design process, since our main focus was to meet the design specifications for the typical case T= 27 C and Cload = 4.8 pF), when we switched to fast case, due to the low capacitance load, the unity gain bandwidth was very high. In order to compensate for this we changed our design so that we get a much lower bandwidth which was compatible with the other corner cases as well. But in doing so, gain dropped for the typical case. Output Swing: T= -40C, Cload = 4.8pF

Page 5: Ece523 folded cascode design

Power Consumption: T=27C, Cload = 6pF ****** operating point information tnom= 25.000 temp= 27.000 ****** ****** operating point status is all simulation time is 0. node =voltage node =voltage node =voltage +0:net15 = 412.2978m 0:net19 = 559.0119m 0:net23 = 412.2978m +0:net27 = 559.0119m 0:net35 = 1.8227 0:net39 = 1.8227 +0:net42 = 605.5429m 0:net44 = 2.5000 0:vb_n1 = 779.9959m +0:vb_n2 = 1.0004 0:vb_p = 1.4001 0:vb_p2 = 1.1999 +0:vin_n = 1.2550 0:vin_p = 1.2550 **** voltage sources subckt element 0:v1 0:v2 0:v3 volts 1.2550 1.2550 2.5000 current 0. 0. -5.4859m power 0. 0. 13.7148m total voltage source power dissipation= 13.7148m watts Power Consumption: T=100C, Cload = 7.2pF ****** operating point information tnom= 25.000 temp= 100.000 ****** ****** operating point status is all simulation time is 0. node =voltage node =voltage node =voltage +0:net15 = 402.7778m 0:net19 = 613.1833m 0:net23 = 402.7778m +0:net27 = 613.1833m 0:net35 = 1.7913 0:net39 = 1.7913 +0:net42 = 579.3725m 0:net44 = 2.5000 0:vb_n1 = 821.7946m +0:vb_n2 = 1.0479 0:vb_p = 1.2737 0:vb_p2 = 1.0779 +0:vin_n = 1.2550 0:vin_p = 1.2550 **** voltage sources subckt element 0:v1 0:v2 0:v3 volts 1.2550 1.2550 2.5000 current 0. 0. -5.3323m power 0. 0. 13.3308m total voltage source power dissipation= 13.3308m watts Power Consumption: T=-40C, Cload = 4.8pF

Page 6: Ece523 folded cascode design

****** operating point information tnom= 25.000 temp= -40.000 ****** ****** operating point status is all simulation time is 0. node =voltage node =voltage node =voltage +0:net15 = 443.7135m 0:net19 = 469.0142m 0:net23 = 443.7135m +0:net27 = 469.0142m 0:net35 = 1.8194 0:net39 = 1.8194 +0:net42 = 625.9979m 0:net44 = 2.5000 0:vb_n1 = 745.6168m +0:vb_n2 = 962.5715m 0:vb_p = 1.5138 0:vb_p2 = 1.3164 +0:vin_n = 1.2550 0:vin_p = 1.2550 **** voltage sources subckt element 0:v1 0:v2 0:v3 volts 1.2550 1.2550 2.5000 current 0. 0. -5.6746m power 0. 0. 14.1866m total voltage source power dissipation= 14.1866m watts

Page 7: Ece523 folded cascode design

NetList: * *folded cascode single amplifier * *setting a variable .param vdc=1.255v *including model .include /nfs/stak/students/h/hambyje/Documents/SCHOOL/ece423/tsmc25.inc *sets up output files (:/) without it no .sw0, .ac0, etc. .option post *.temperature 100 *.temperature 27 .temperature -40 *VOLTAGE SOURCES V3 net44 0 2.5v $Power supply/do not change *INPUT VOLTAGE SOURCES V2 Vin_n 0 DC=vdc AC=500.0m, 180 V1 Vin_p 0 DC=vdc AC=500.0m, 0 *V2 Vin_n 0 sin(1.255 0.6m 500Hz 0 0 180) *V1 Vin_p 0 sin(1.255 0.6m 500Hz 0 0 0) *****************************FOLDED CASCODE DIFF IN, SINGLE OUT************* *NMOS grounded and below output M6 net15 net27 0 0 CMOSN w=50u l=250.0n as=33e-12 ad=33e-12 ps=101.32u pd=101.32u M7 net23 net27 0 0 CMOSN w=50u l=250.0n as=33e-12 ad=33e-12 ps=101.32u pd=101.32u *NMOS below output node M5 net19 Vb_n2 net15 net15 CMOSN w=38u l=250.00n as=25.08e-12 ad=25.08e-12 ps=77.32u pd=77.32u M4 net27 Vb_n2 net23 net23 CMOSN w=38u l=250.00n as=33e-12 ad=25.08e-12 ps=77.32u pd=77.32u *NMOS below diff pair M10 net42 Vb_n1 0 0 CMOSN w=100u l=250n as=0.66e-12 ad=0.66e-12 ps=201.32u pd=201.32u *NMOS diff input pair M3 net35 Vin_p net42 net42 CMOSN w=126u l=250.00n as=83.16e-12 ad=83.16e-12 ps=253.32u pd=253.32u M0 net39 Vin_n net42 net42 CMOSN w=126u l=250.00n as=83.16e-12 ad=83.16e-12 ps=253.32u pd=253.32u *PMOS vdd current mirror pair M8 net35 Vb_p net44 net44 CMOSP w=36.5u l=250.00n as=24.09e-12 ad=24.09e-12 ps=74.32u pd=74.32u

Page 8: Ece523 folded cascode design

M9 net39 Vb_p net44 net44 CMOSP w=36.5u l=250.00n as=24.09e-12 ad=24.09e-12 ps=74.32u pd=74.32u *PMOS above output node M1 net19 Vb_p2 net39 net39 CMOSP w=30u l=250.00n as=19.8e-12 ad=19.8e-12 ps=61.32u pd=61.32u M2 net27 Vb_p2 net35 net35 CMOSP w=30u l=250.00n as=19.8e-12 ad=19.8e-12 ps=61.32u pd=61.32u **************************************************************************** **************************BIASING CIRCUIT*********************************** *Iref I3 Vb_p 0 26.95uA M17 Vb_p2 Vb_n1 0 0 CMOSN w=50u l=250.0n as=33e-12 ad=33e-12 ps=101.32u pd=101.32u M13 Vb_n2 Vb_n2 0 0 CMOSN w=.891u l=250.00n as=0.58806e-12 ad=0.58806e-12 ps=3.32u pd=3.32u M15 Vb_n1 Vb_n1 0 0 CMOSN w=1.35u l=250.0n as=0.891e-12 ad=0.891e-12 ps=4.02u pd=4.02u M16 Vb_p2 Vb_p2 net44 net44 CMOSP w=22.8u l=250.00n as=15.048e-12 ad=15.048e-12 ps=46.92u pd=46.92u M12 Vb_p Vb_p net44 net44 CMOSP w=.500u l=250.00n as=0.33e-12 ad=0.33e-12 ps=1.32u pd=1.32u M11 Vb_n1 Vb_p net44 net44 CMOSP w=.7835u l=250.00n as=0.51711e-12 ad=0.51711e-12 ps=2.887u pd=2.887u M14 Vb_n2 Vb_p2 net44 net44 CMOSP w=1u l=250.00n as=.66e-12 ad=.66e-12 ps=3.32u pd=3.32u **************************************************************************** *Load Capacitor: note at 27C, 6pF: -40C, 4.8pF: 100C, 7.2pF *C0 net19 0 7.2pf $hot case $C0 net19 0 6pf $nominal case C0 net19 0 4.8pf $cold case *calculates dc operating points and mosfet regions/characteristic .op *ac analysis; frequency sweep and temp sweep .ac dec 10 1 1G $this is for bode/phase *transient analysis; output swing *.tran 10us 10ms 0s 10us $this is for output swing *grabs measurements from all nodes .probe .end