Download ppt - Strong coupling between Tamm Plasmon and QW exciton

Strong coupling between Tamm Plasmon and

QW exciton

E. Homeyer, C. Symonds, A. Lemaitre* , J.C. Plenet, J. Bellessa

LPMCN (Laboratory of Physics of Condensed Mater and Nanostructures)University Claude Bernard Lyon 1, Lyon, France

* LPN (Laboratory For Photonics and Nanostructures), Marcoussis, France

PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

• Introduction

Outline

• Plasmon in GaAs/GaAlAs heterostructures• Samples• Plasmon / heavy- and light-hole exciton mixing• Room temperature experiments

• Tamm plasmon states• Description of Tamm plasmons• Emission of Tamm/exciton polaritons

• ConclusionPLMCN 2010, Cuernavaca, Mexico - April 15th 2010

• Introduction

Outline




Surface plasmons

• Surface plasmon : Interface metal / dielectric material

Introduction

• Near a luminescent source (Dye or QW)– Weak coupling regime– Strong coupling regime

Metal

Dielectric

– Damping ∟& // propagation– TM Mode only


Plasmon in weak coupling regime

Objective : enhancement of the spontaneous emission rate


Introduction

A Akimov et al., Nature. 450, 402 (2007)

Enhancement PL : 2.5 x

Coupling efficiency 60%

• For nanoparticles

Okamoto K et al. Nature Mat. 3 (9) 601 (2004)

A.Neogi, et al., Phys. Rev. B, 66,153305(2002)

• For active layers such as GaN/InGaN QW

– Enhancement SER 92 x

– Enhancement PL 17 x

• Semiconductor nanocrystals arrays : CdSe dots under a thin silver film

Rabi splitting of 112 meV

D.E. Gomez et al. Nano Lett. 10 274 (2010)

Plasmon in strong coupling


Introduction

Strong interaction between plasmons and :

• Aggregated dyes.

J. Bellessa, C. Bonnand, J.C. Plenet, J. Mugnier., PRL 93, 36404 (2004). T.K. Hakala et al. PRL 103 053602 (2009)

• Laser dyes such as Rhodamine 6G

Rabi splitting energies up to 230 meV.

• Introduction

Outline




SamplesPlasmon in GaAs/GaAlAs heterostructures

GaAs

QW (x5)

1540 1550 1560 1570 1580

Xlh

Xhh

Lu

min

es

ce

nc

e (

arb

. u.)

Energy (meV)

• Samples elaborated in collaboration with A. Lemaître (LPN)


Silver

• Decoupling with a silver grating :

Silver

periodicity Λ = 250nm

Metal

Dielectric

1500 1550 1600

Xhh

60°

55°

50°

45°

40°

35°

30°

Ref

lect

ivity

Energy (meV)

25°

Xlh

Plasmon/heavy/light-exciton mixing

θ

• Reflectometry at 77K

Anticrossing plasmon/Xlh Strong coupling between SP and excitons


Plasmon in GaAs/GaAlAs heterostructures

Polaritons : -plasmon/-heavy hole exciton/-Light hole exciton

VXhh=22meV

VXlh=21meV

Xhhhhexc

Xlhlhexc

plasmonpl

iE

iE

ikE

H

02/

02/

2/2/)(

2

1

21

J. Bellessa, C. Symonds, C. Meynaud, J.C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, and A. Lemaitre. Phys. Rev. B 78, 205326 (2008).PLMCN 2010, Cuernavaca, Mexico - April 15th 2010


• Dispersion relation

Plasmon/heavy/light-exciton mixing

4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,00,0

0,2

0,4

0,6

0,8

1,0

Plasmon Xhh Xlh

||2

Wavevector (µm-1)

• Mixing of Xhh & Xlh

XhhPlasmonXlh

• Still strong coupling @ RT

Rabi energy at resonance 20 meV

Room temperature experiments



No polaritonic luminescence is present

• Introduction

Outline




• Surface mode • Bragg mirror / metal layer• Very narrow linewidth • Direct coupling to

radiative light• TE and TM modes• Deep penetration length

A. V. Kavokin, I. A. Shelykh, and G. Malpuech, Phys. Rev. B 72, 233102 2005.M. E. Sasin, et al., Appl. Phys. Lett. 92, 251112 2008.

Description of Tamm plasmonsTamm plasmon states


Quantum wells in a Tamm structureTamm plasmon states


• Thick Bragg mirror to reduce the linewidth

GaAs substrate

AlAs

Al0.05Ga0.95As

25

• Silver film on top of the structure Tamm plasmon mode

• Inclusion of 2 InGaAs/AlGaAs QWs in the 15 last high refractive index layers

15

Silver film

Reflectometry experimentsTamm plasmon states

PLMCN 2010, Cuernavaca, Mexico - April 15th 201020 22 24 26 28 30 32

1430

1440

1450

1460

1470

(c)

Ene

rgy

(meV

)

Angle (°)

Ene

rgy

(meV

)

1430

1440

1450

1460

1470

1430 1440 1450 1460 1470 1480

(b)(b)

(b)

Energy (meV)

Ref

lect

iviy

(A

rb. u

nits

)

• Anticrossing between the exciton and the Tamm plasmon

• Rabi splitting : 12 meV

• Thin polariton lines compared to the splitting

• Simulations with a transfer matrix method

Luminescence of hybrid statesTamm plasmon states


• Strong emission at the low polariton energy

• Incoherent luminescence

• Emission in TE and TM polarisations

Conclusion

• Hybrid states plasmon/exciton in inorganic semiconductors

• Plasmon/Xlh/Xhh interaction energies of 21 and 22 meV

• Emission of Tamm plasmon/exciton polaritons
