Download pdf - 30.0 kHz-32.0 GHz GaAs MMIC Distributed QFN Packaged Amplifierpdf-file.ic37.com/pdf3/MIMIX/D1008_datasheet_966419/157710/D1008... · 30.0 kHz-32.0 GHz GaAs MMIC Distributed QFN Packaged

30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

Page 1 of 9

Features

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

December 2009 - Rev 08-Dec-09 D1008-QH

17 dB Small Signal Gain24 dBm Saturated Power3.0 dB Noise FigureUnconditional Stability over Temperature Range 4x4mm Fully Molded Standard QFN Package 100% RF & DC Testing

Bias SettingsParameter

Drain Current (Id)Drain Voltage (Vd)Gate Bias (Vg1)1

Gate Bias (Vg3)2

UnitsmA

VV

Ohm

Min.1504.0-5.0

GND

Typ.----

Max.3007.00.0

Open

Mimix Broadband’s 30 kHz – 32 GHz MMIC distributed amplifier has a gain of 17 dB and provides 24 dBm saturated power with 3.0 dB Noise Figure. The device comes in an RoHS compliant 4x4mm QFN surface mount package offering excellent RF and thermal properties. The device’s broad bandwidth operation makes it very versatile for microwave and millimeter applications such as instrumentation, EW and commercial communication systems.

General Description

Absolute Maximum RatingsSupply Voltage (Vd1,2,3)Gate Bias Voltage (Vg1,2,3)Input Power (Pin)Abs. Max. Junction/Channel Temp.Max. Operating Junction/Channel Temp.Continuous Power Dissipation (Pdiss) at 85 ºC

Thermal ResistanceOperating Temperature (Ta)Storage Temperature (Tstg)Mounting TemperatureESD Min - Machine Model (MM)ESD Min - Human Body Model (HBM)MSL Level

+10.0V

-9.5V < Vg < 0V

+17 dBm

See MTTF Graph1

150 ºC

1.6W

40 ºC/W

-55 ºC to +85 ºC

-65 ºC to 165 ºC

See solder reflow profile

Class A

Class 1A

MSL3(1) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime.


Page 2 of 9

Electrical Characteristics for High Power Applications1

Vd=7V, Id=200mA, VG3 = OPEN

Electrical Characteristics for High Gain Applications1

Vd=4V, Id=160mA, VG3=GND





zHG 0.23 ot 5.62zHG 5.62 ot zHk 0.03egnaR ycneuqerF

Parameter Units Min Typ Max Min Typ Max Parameter Units Min Typ Max Min Typ Max

0.50.01Bd )11S( ssoL nruteR tupnI

0.50.21Bd)22S( ssoL nruteR tuptuO

0.410.41Bd)12S( niaG langiS llamS

0.030.03Bd)21S( noitalosI esreveR

Output Power for 1dB Comp 0.025.22mBd)Bd1P( noisser

0.220.42mBd)tasP( rewoP tuptuO detarutaS

0.820.23mBd)mBd4=lcsP( )mBd( 3PI tuptuO

0.30.3Bd)FN( erugiF esioN

zHG 0.23 ot 5.62zHG 5.62 ot zHk 03egnaR ycneuqerF

Parameter Units Min Typ Max Min Typ Max

0.50.01Bd )11S( ssoL nruteR tupnI

0.50.21Bd)22S( ssoL nruteR tuptuO

0.710.71Bd)12S( niaG langiS llamS

0.030.03Bd)21S( noitalosI esreveR

Output Power for 1dB Comp 0.410.71mBd)Bd1P( noisser

0.710.02mBd)tasP( rewoP tuptuO detarutaS

0.220.92mBd)mBd4=lcsP( )mBd( 3PI tuptuO

0.30.3Bd)FN( erugiF esioN

(1) Data measured at ambient temperature of 25 ºC.


Page 3 of 9

Measured Performance





XD1008-QH: Input Return Loss, S11 (dB)

-15

-10

-5

0

1 1 (d

B)

-30

-25

-20

0 5 10 15 20 25 30 35

Freq (GHz)

S1

4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

XD1008-QH: Small Signal Gain, S21 (dB)

10

15

20

25

2 1 (d

B)

0

5

10

0 5 10 15 20 25 30 35

Freq (GHz)

S2


XD1008-QH: Output Return Loss, S22 (dB)

-15

-10

-5

0

2 (d

B)

-30

-25

-20

15

0 5 10 15 20 25 30 35

Freq (GHz)

S22

4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V 200mA Vg3 Open 7V 200mA Vg3 GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

XD1008-QH: Reverse Isolation, S12 (dB)

-20

-10

0

dB)

-60

-50

-40

-30

0 5 10 15 20 25 30 35

Freq (GHz)

S12

(

4V 160mA Vg3 Open 4V 160mA Vg3 GND4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

XD1008-QH: Noise Figure (dB) vs Freq (GHz)

678910

B)

0123456

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28Freq (GHz)

NF

(dB

7V 200mA Vg3 Open 7V 200mA Vg3 GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND4V_160mA_Vg3_Open 4V_160mA_Vg3_GND

XD1008-QH: Noise Figure (dB) vs Freq (GHz)

678910

B)

0123456

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28Freq (GHz)

NF

(dB

4V_160mA_Vg3_GND 5V_170mA_Vg3_GND_ _ g _ _ _ g _6V_180mA_Vg3_GND 7V_200mA_Vg3_GND


Page 4 of 9

Measured Performance (cont.)





XD1008-QH: Small Signal Gain (dB) vs Freq (GHz)

101214161820

in (d

B)

02468

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

Freq (GHz)

Gai


XD1008-QH: Psat (dBm) vs Freq (GHz)

1820222426

t (dB

m)

10121416

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32Freq (GHz)

Psa

4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V 200mA Vg3 Open 7V 200mA Vg3 GND_ 00 _ g3_Ope _ 00 _ g3_G

XD1008-QH: P1dB (dBm) vs Freq (GHz)

18

20

22

24

(dB

m)

10

12

14

16

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32Freq (GHz)

P1dB

(


XD1008-QH: OIP3 (dBm) vs Freq (GHz)

2629323538

(dB

m)

1417202326

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32Freq (GHz)

OIP

3 (


XD1008-QH: Pout vs Pin at 4V 160mA, VG3 Open

202224

Bm

)

1012141618

-5 -3 -1 1 3 5 7 9 11 13 15

Pin (dBm)

Pout

(dB

1 GHz 2 GHz 6 GHz10 GHz 14 GHz 18 GHz

XD1008-QH: Pout vs Pin at 4V 160mA, VG3 GND

2022

24

Bm

)

10

1214

16

18

-5 -3 -1 1 3 5 7 9 11 13 15

Pin (dBm)

Pout

(dB



Page 5 of 9

Measured Performance (cont.)





XD1008-QH: Pout vs Pin at 7V 200mA, VG3 Open

182022242628

t (dB

m)

1012141618

-5 -3 -1 1 3 5 7 9 11 13 15

Pin (dBm)

Pout


XD1008-QH: Pout vs Pin at 7V 200mA, VG3 GND

182022242628

t (dB

m)

1012141618

-5 -3 -1 1 3 5 7 9 11 13 15

Pin (dBm)

Pout


XD1008-QH: OIP3 vs Pin at 4V 160mA, VG3 Open

28

32

36

d Bm

)

16

20

24

0 4 8 12 16 20 24 28 32

Pin (dBm)

OIP

3 (d

-10 dBm -8 dBm -6 dBm10 dBm 8 dBm 6 dBm-4 dBm -2 dBm

XD1008-QH: OIP3 vs Pin at 4V 160mA, VG GND

28

32

36

Bm

)

16

20

24

28

0 4 8 12 16 20 24 28 32Pin (dBm)

OIP

3 (d

-10 dBm -8 dBm -6 dBm10 dBm 8 dBm 6 dBm-4 dBm -2 dBm

XD1008-QH: OIP3 vs Pin at 7V 200mA, VG3 Open

36

40

m)

20

24

28

32

0 4 8 12 16 20 24 28 32

Pin (dBm)

OIP

3 (d

B

-10 dBm -8 dBm -6 dBm-4 dBm -2 dBm

XD1008-QH: OIP3 vs Pin at 7V 200mA, VG3 GND

36

40

m)

20

24

28

32

0 4 8 12 16 20 24 28 32Pin (dBm)

OIP

3 (d

B

-10 dBm -8 dBm -6 dBm-4 dBm -2 dBm


Page 6 of 9

Physical Dimensions/Layout

Functional Block Diagram/Pin Designations





VG3

+7 V

RFIN

RFOUT

Bias Tee

VG1

Pin Number Pin Name Pin Function Nominal Value

4 RFin RF

11 Vg1Gate Bias/Drain Control

-2.5 V

16 RFout RF/Vd Bias 4-7 V via Bias TeePower or Gain

24 Vg3Power or Gain Increase

OPEN/GND

3, 5, 15, 17 GND GND GND

All other pins are N/C and should be connected to GND


Page 7 of 9

MTTF





App Note [1] Biasing - As shown in functional schematic, the device is operated by typically biasing the drain with 4.0to 7.0 V and 160 to 200 mA through a bias tee at RFout. The drain current is controlled by the gate bias at VG1 which istypically at -2.5 V for normal operation. It is recommended to use active bias to keep the currents constant in order tomaintain the best performance over temperature. Depending on the supply voltage available and the power dissipatiorconstraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor inseries with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct draincurrent and thus drain voltage. The typical gate voltage needed to do this is -2.5V. Make sure to sequence the appliedvoltage to ensure negative gate bias is available before applying the positive drain supply.

App Note [2] Bias Arrangement - Each DC pin (Vd and Vg) needs to have DC bypass capacitance (100pF/10nF/1uF) asclose to the package as possible.

XD1008-QH: MTTF (hours) at Vd=7V, 200mA

1.0E+091.0E+101.0E+111.0E+121.0E+131.0E+14

(hou

rs)

1.0E+041.0E+051.0E+061.0E+071.0E+081.0E 09

20 30 40 50 60 70 80 90 100 110 120

Backplate Temp (oC)

MTT

F

XD1008-QH: Max. Tch (ºC) at Vd=7V, 200mA

100120140160180200

el T

emp.

(o C)

020406080100

20 30 40 50 60 70 80 90 100 110 120

Backplate Temp (oC)

Max

. Cha

nne

XD1008-QH: Operating Power De-rating Curve

1.21.41.61.8

W)

00.20.40.60.81

25 50 75 100 125 150

Pdis

s ( W

Backplate Temp (oC)

VG3 N/C N/C N/C N/C

N/CN/C

tuoFRniFR

VG1N/C


Page 8 of 9

Evaluation Board






Page 9 of 9Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com




Handling and Assembly Information

Ordering Information

CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and theenvironment. For safety, observe the following procedures:

• Do not ingest.• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.

Electrostatic Sensitive Device - Observe all necessary precautions when handling.

Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices orsystems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Lifesupport devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustainlife, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can bereasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect itssafety or effectiveness.

Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatiblewith high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place thispart. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and groundconnections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability andlife of the product due to thermal stress.

Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmentalrequirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliantcomponents are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes aswell as higher temperature (260°C reflow) “Pb Free” processes.

Part Number for Ordering DescriptionXD1008-QH-0G00 Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in bulk quantityXD1008-QH-0G0T Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in tape and reelXD1008-QH-EV1 XD1008-QH evaluation board

Typical Reflow Profiles

Reflow Profile

Ramp Up Rate

Activation Time and Temperature

Time Above Melting Point

Max Peak Temperature

Time Within 5 ºC of Peak

Ramp Down Rate

SnPb

3-4 ºC/sec

60-120 sec @ 140-160 ºC

60-150 sec

240 ºC

10-20 sec

4-6 ºC/sec

Pb Free

3-4 ºC/sec

60-180 sec @ 170-200 ºC

60-150 sec

265 ºC

10-20 sec

4-6 ºC/sec

Ca u t i o n : E S D S e n s i t i veAppropriate precautions in handling, packaging

and testing devices must be observed.

Proper ESD procedures should be followed when handling this device.