VLSI CIRCUIT DESIGN

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INTRODUCTION OF VLSI DESIGN

Text of VLSI CIRCUIT DESIGN

  • Dr. Ke Huang

    COMPE 572

    VLSI Circuit Design

    Fall 2015

    Lecture 1: Introduction to VLSI Circuits

    VLSI Circuit Design

  • Course #: COMPE 572

    Course name: VLSI Circuit Design

    Two lectures per week: Tuesday, Thursday 5:30PM-6:45PM

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    Class administration

  • Instructor: Dr. Ke Huang

    Email: khuang@mail.sdsu.edu

    Office: E202B

    Office hours: Tuesday 10:00am - 12:00pm Thursday 10:00 am - 12:00pm Phone: 619-594-7792

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    Class administration

  • When emailing me, please format the subject line as follows:

    COMPE572 - -

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    Email

  • Title : CMOS VLSI Design A Circuits and Systems Perspective

    Edition: 4th, Addison Wesley

    Authors: Neil H.E. West David Money Harris

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    Textbooks

  • Title : Microelectronic Circuits

    Edition: 7th, Oxford University Press

    Authors: Adel S. Sedra Kenneth C. Smith

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    Textbooks

  • Title : Digital Systems Design using VHDL

    Edition: 2nd, Cengage Learning

    Authors: Charles H. Roth, Jr. Lizy Kurian John

    Course material available on the Blackboard

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    Textbooks

  • Homework will be assigned on a weekly basis. Available on Blackboard every week.

    Homework is due at the beginning of class on the date specified on Blackboard.

    Penalty will apply if submitted late.

    Homework is essential to the learning process!

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    Homework

  • Four lab project assignments in total

    Lab reports due dates specified on Blackboard

    There are no scheduled lab times. Perform your lab work when you wish (subject to lab open hours)

    Project assignments must be completed to pass the course, in accordance with accreditation requirements

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    Lab

  • Several quizzes during the semester

    One mid-term exam during the semester

    One final exam at the end of the semester

    Exams are closed book, but you are allowed to bring one page of notes (letter size) prepared by your own

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    Exams

  • Homework and project assignments

    30% of grade

    Midterm exam and quizzes

    30% of grade

    Final exam

    40% of grade

    Class participation bonus

    Up to 5% of grade. You will have a bonus when you come to the board and correctly resolve a problem

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    Class grades

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    Class grades Grading system

  • Attend class and participate

    Spend time outside of class learning the material

    Read the text books

    Do the homework

    Attend the lab and complete all of the lab projects

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    You are expected to

  • COMPE271, EE330

    You must provide the proof of prerequisites (e.g. copy of official transcript) by 8/27/2015, otherwise you will be dropped from the class. If your prerequisite courses were not taken at SDSU, you should obtain a proof of course equivalency from the Office of Advising and Evaluations at SDSU, showing that the courses you have taken are equivalent to COMPE271 and EE330.

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    Prerequisites

  • In my file, the following students are enrolled but have not provided the proof of prerequisites yet:

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    Prerequisites

    M. Alva J. L. Ashok Kumar S. Bheemareddy R. Bommakuri D. Damani P. Gupta A. Ilango J. Jadhav P. Kansara P. Kondlapudi

    D. Sanghvi S. Sanjay D. Shah D. Shah H. Shah

    A.M. Kothari A. Kulkarni R. M. Kulkarni P. Mhasalkar N. Namala D. Patel

    J. Shah R. Shah V. Shashidhara Q. Su A. Tyagi M. Vanga

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    Questions?

  • Introduction of VLSI

    Review of bipolar junction transistor (BJT)

    Review of metaloxidesemiconductor field-effect transistor (MOSFET)

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    Learning objectives

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    Introduction of VLSI

    Application of Very-Large-Scale Integration (VLSI) systems

    VLSI systems

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    Different levels of abstraction

    System design

    Memory ALU

    Control I/O

    Logic design Circuit design

    We focus on circuit design in this course

    Introduction of VLSI

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    Introduction of VLSI

    Discrete electronic components

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    Introduction of VLSI

    Circuit design with discrete electronic components

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    Introduction of VLSI

    First integrated circuit (IC) - Texas Instruments 1958

    1 transistor and 4 other devices on 1 chip Winner of the 2000 Nobel Prize

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    Introduction of VLSI

    First commercial planar IC Fairchild 1959

    1-bit memory device on a chip 4 transistors and 5 resistors small scale integration

    technology

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    Introduction of VLSI

    709 operational amplifier Fairchild 1965

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    Introduction of VLSI

    First 1,024 bit memory chip Intel 1970

    Mostly made of nMOS transistors

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    Introduction of VLSI

    First microprocessor Intel 1971

    The Intel 4004 2,300 Transistors

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    Introduction of VLSI

    Intel core i7 Bloomfield Intel 2008

    1.4 billion transistors

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    Introduction of VLSI

    Scales of integrated circuits

    Small-scale integration (SSI) ~10 components

    Medium-scale integration (MSI) ~100 components

    Large-scale integration

    (LSI) ~10,000 components

    Very large-scale integration (VLSI) has more than tens of thousands of transistors on a single chip

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    Introduction of VLSI

    Semiconductor manufacturing

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    Introduction of VLSI

    Semiconductor manufacturing

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    Introduction of VLSI

    IC wafers and packaging

    After metal deposition, each wafer contains a number of the same ICs, which will be cut into distinct pieces and put in the package

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    Introduction of VLSI

    Illustration of IC layout

    3-D illustration of an IC Cross-sectional diagram of

    n- and p-MOSFETs

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    Introduction of VLSI

    What do we do?

    Circuit-level schematic design

    Layout design Hardware description language

  • Introduction of VLSI

    Review of bipolar junction transistor (BJT)

    Review of metaloxidesemiconductor field-effect transistor (MOSFET)

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    Learning objectives

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    Review of bipolar junction transistor (BJT)

    Simplified structure of the npn and pnp transistors

    npn transistor

    pnp transistor

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    Review of bipolar junction transistor (BJT)

    Characteristic for an npn transistor

    characteristic characteristic

  • Introduction of VLSI

    Review of bipolar junction transistor (BJT)

    Review of metaloxidesemiconductor field-effect transistor (MOSFET)

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    Learning objectives

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    Review of metaloxidesemiconductor field-effect transistor (MOSFET)

    Physical structure of NMOS transistors

    Physical structure of NMOS Cross-section of NMOS

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    Review of metaloxidesemiconductor field-effect transistor (MOSFET)

    Complementary MOS (CMOS)

    Cross-section of a CMOS integrated circuit

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    Review of metaloxidesemiconductor field-effect transistor (MOSFET)

    Characteristics of nMOS

    G

    S

    D Overdrive voltage: how much exceeds

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    Review of metaloxidesemiconductor field-effect transistor (MOSFET)

    Characteristics of nMOS a 3-dimensional view

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    Review of metaloxidesemiconductor field-effect transistor (MOSFET)

    Characteristics of nMOS a 3-dimensional vie