VLSI 2019-12-30¢  15A04604 VLSI DESIGN Course Objectives: To understand VLSI circuit design processes

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    VLSI DESIGN (15A04604)



    III - YEAR & II - SEM

    Prepared by:

    Dr. A. Pulla Reddy, Associate Professor

    Department of Electronics and Communication Engineering


    (Approved By AICTE, New Delhi and Affiliated to JNTUA, Ananthapuramu)

    Accredited By NAAC & ISO: 9001-2015 Certified Institution

    Near Pakala, P. Kothakota, Chittoor- Tirupathi Highway

    Chittoor, Andhra Pradesh - 517 112

    Web Site: www.vemu.org




    B. Tech III-IISem. (ECE)

    L T P C

    3 1 0 3

    15A04604 VLSI DESIGN

    Course Objectives:

    To understand VLSI circuit design processes.

    To understand basic circuit concepts and designing Arithmetic Building Blocks.

    To have an overview of Low power VLSI.

    Course Outcomes:

    Complete Knowledge about Fabrication process of ICs

    Able to design VLSIcircuits as per specifications given.

    Capable of optimizingthe design of Arithmetic / logic building Blocks at all levels of Design/Fabrication.

    Can implement circuit through various design styles ( semi- Custom, Full Custom)


    Introduction: Basic steps of IC fabrication, PMOS, NMOS, CMOS &BiCMOS,and SOI process technologies, MOS

    transistors - MOS transistor switches – Basic gate using switches, working polartransistor Resistors and Capacitors. Basic Electrical Properties of MOS and BiCMOS Circuits: Working of MOS transistors – threshold voltage; MOS

    design equations: Ids–Vds relationships, Threshold Voltage, Body effect, Channel length modulation , gm, gds, figure of

    merit ω0; Pass transistor, NMOS Inverter, CMOS Inverter analysis and design, Various pull ups loads,Bi-CMOS Inverters.


    Basic Circuit Concepts: Capacitance, resistance estimations- Sheet Resistance Rs, MOSDivice Capacitances, routing

    apacitance, Analytic Inverter Delays, Driving large Capacitive Loads, Fan-in and fan-out.

    VLSI Circuit Design Processes: VLSI Design Flow, MOS Layers, Stick Diagrams, Design Rules and Layout, 2μm CMOS

    Design rules for wires, Contacts and Transistors Layout Diagrams for NMOS and CMOS Inverters and Gates, Scaling of

    MOS circuits, Limitations of Scaling.


    Gate level Design: Logic gates and other complex gates, Switch logic, Alternate gate circuits. Physical Design: Floor-Planning, Placement, routing, Power delay estimation, Clock and Power routing


    Subsystem Design: Shifters, Adders, ALUs, Multipliers, Parity generators, Comparators, Counters, High Density Memory


    VLSI Design styles: Full-custom, Standard Cells, Gate-arrays, FPGAs, CPLDs and Design Approach for Full-custom and

    Semi-custom devices.


    VHDL Synthesis: VHDL Synthesis, Circuit Design Flow, Circuit Synthesis, Simulation, Layout, Design capture tools,

    Design Verification Tools.

    Test and Testability: Fault-modeling and simulation, test generation, design for testability, Built-in-self-test.


    1. Kamran Eshraghian, Eshraghian Douglas and A. Pucknell, “Essentials of VLSI circuits and systems”, PHI, 2013 Edition.

    2. K.Lal Kishore and V.S.V. Prabhakar, “VLSI Design”, IK Publishers


    1. Weste and Eshraghian, “Principles of CMOS VLSI Design”, Pearson Education, 1999.

    2. Wayne Wolf, “Modern VLSI Design”, Pearson Education, 3rd Edition, 1997.

    3. John P. Uyemura, “Chip Design for Submicron VLSI: CMOS layout and Simulation”, Thomson Learning.

    4. John P. Uyemura, “Introduction to VLSI Circuits and Systems”, John wiley, 2003.

    5. John M. Rabaey, “Digital Integrated Circuits”, PHI, EEE, 1997

  • Unit -1 IC Technologies, MOS & Bi CMOS Circuits


    IC Technologies


    The development of electronics endless with invention of vaccum tubes and associated

    electronic circuits. This activity termed as vaccum tube electronics, afterward the evolution of solid

    state devices and consequent development of integrated circuits are responsible for the present status

    of communication, computing and instrumentation.

    • The first vaccum tube diode was invented by john ambrase Fleming in 1904.

    • The vaccum triode was invented by lee de forest in 1906.

    Early developments of the Integrated Circuit (IC) go back to 1949. German engineer

    Werner Jacobi filed a patent for an IC like semiconductor amplifying device showing five

    transistors on a common substrate in a 2-stage amplifier arrangement. Jacobi disclosed small

    cheap of hearing aids.

    Integrated circuits were made possible by experimental discoveries which showed that

    semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century

    technology advancements in semiconductor device fabrication.

    The integration of large numbers of tiny transistors into a small chip was an enormous

     Introduction

     MOS

     PMOS

     NMOS

     CMOS


     BiCMOS


    Basic Electrical Properties of

    MOS and BiCMOS Circuits

     IDS - VDS relationships

     MOS transistor Threshold

    Voltage - VT figure of


     Transconductance-gm, gds;

     Pass transistor

     NMOS Inverter, Various

    pull ups, CMOS Inverter

    analysis and design

     Bi-CMOS Inverters

  • improvement over the manual assembly of circuits using electronic components.

    The integrated circuits mass production capability, reliability, and building-block approach to

    circuit design ensured the rapid adoption of standardized ICs in place of designs using discrete


    An integrated circuit (IC) is a small semiconductor-based electronic device consisting of

    fabricated transistors, resistors and capacitors. Integrated circuits are the building blocks of

    most electronic devices and equipment. An integrated circuit is also known as a chip or


    There are two main advantages of ICs over discrete circuits: cost and performance. Cost is

    low because the chips, with all their components, are printed as a unit by photolithography rather

    than being constructed one transistor at a time. Furthermore, much less material is used to construct a

    packaged IC die than a discrete circuit. Performance is high since the components switch quickly and

    consume little power (compared to their discrete counterparts) because the components are small and

    positioned close together. As of 2006, chip areas range from a few square millimeters to around 350

    mm2, with up to 1 million transistors per mm

  • Unit -1 IC Technologies, MOS & Bi CMOS Circuits

    IC Invention:

    Inventor Year Circuit Remark

    Fleming 1904


    Vacuum tube diode

    Vacuum triode

    large expensive, power-

    hungry, unreliable

    William Shockley

    (Bell labs)

    1945 Semiconductor replacing

    vacuum tube


    Bardeen and

    Brattain and

    Shockley (Bell labs)

    1947 Point Contact transfer

    resistance device “BJT”

    Driving factor of growth of

    the VLSI technology

    Werner Jacobi

    (Siemens AG)

    1949 1st IC containing amplifying

    Device 2stage amplifier

    No commercial use reported

    Shockley 1951 Junction Transistor “Practical form of


    Jack Kilby



    July 1958 Integrated Circuits F/F

    With 2-T Germanium slice

    and gold wires

    Father of IC design

    Noyce Fairchild


    Dec. 1958 Integrated Circuits Silicon “The Mayor of Silicon


    Kahng Bell Lab 1960 First MOSFET Start of new era for

    semiconductor industry



    And Texas

    1061 First Commercial


    Frank Wanlass



    1963 CMOS

    Federico Faggin



    1968 Silicon gate IC technology Later Joined Intel to lead

    first CPU Intel 4004 in 1970 2

    2300 T on 9mm



    Recently M2A capsule for


    take photographs of

    digestive tract 2/sec.

    http://en.wikipedia.org/w/index.php?title=Werner_Jacobi&amp%3Baction=edit&amp%3Bredlink=1 http://en.wikipedia.org/wiki/Fairchild_Semiconductor http://en.wikipedia.org/wiki/Fairchild_Semiconductor http://en.wikipedia.org/wiki/Fairchild_Semiconductor http://en.wikipedia.org/wiki/Fairchild_Semiconductor http://en.wikipedia.org/wiki/Federico_Faggin

  • Unit -1 IC Technologies, MOS & Bi CMOS