Ultra-Low Bias Current Difet® Operational Amplifier · PDF fileUltra-Low Bias Current Difet® OPERATIONAL AMPLIFIER FEATURES ULTRA-LOW BIAS CURRENT: 100fA max LOW OFFSET: 2mV max

Ultra-Low Bias Current Difet OPERATIONAL AMPLIFIER
FEATURES ULTRA-LOW BIAS CURRENT: 100fA max
LOW OFFSET: 2mV max
LOW DRIFT: 10V/C max HIGH OPEN-LOOP GAIN: 94dB min
LOW NOISE: 15nV/Hz at 10kHz PLASTIC DIP AND SO PACKAGES
APPLICATIONS PHOTODETECTOR PREAMPS
CHROMATOGRAPHY
ELECTROMETER AMPLIFIERS
MASS SPECTROMETERS
pH PROBE AMPLIFIERS
ION GAGE MEASUREMENT
DESCRIPTIONThe OPA129 is an ultra-low bias current monolithicoperational amplifier offered in an 8-pin PDIP andSO-8 package. Using advanced geometrydielectrically-isolated FET (Difet) inputs, this monolithicamplifier achieves a high performance level.
Difet fabrication eliminates isolation-junction leakagecurrentthe main contributor to input bias current withconventional monolithic FETs. This reducesinput bias current by a factor of 10 to 100. Very lowinput bias current can be achieved without resorting tosmall-geometry FETs or CMOS designs which cansuffer from much larger offset voltage, voltage noise,drift, and poor power-supply rejection.
The OPA129 special pinout eliminates leakage currentthat occurs with other op amps. Pins 1 and 4 have nointernal connection, allowing circuit board guard traceseven with the surface-mount package version.
OPA129 is available in 8-pin DIP and SO packages,specified for operation from 40C to +85C.
+In
Output
6
Noise-FreeCascode
7
5
V
V+
30k 30k
In
3
2
Simplified Circuit
8
Substrate
OPA129
OPA129
OPA129
SBOS026A JANUARY 1994 REVISED APRIL 2007
www.ti.com
PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.
Copyright 19942007, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Difet is a registered trademark of Texas Instruments.All other trademarks are the property of their respective owners.

OPA1292SBOS026Awww.ti.com
SPECIFICATIONSELECTRICALAt VS = 15V and TA = +25C, unless otherwise noted. Pin 8 connected to ground.
NOTES: (1) High-speed automated test.(2) Overload recovery is defined as the time required for the output to return from saturation to linear operation following the removal of a 50% inputoverdrive.
OPA129PB, UB OPA129P, U
PARAMETER CONDITION MIN TYP MAX MIN TYP MAX UNITS
INPUT BIAS CURRENT(1) VCM = 0V 30 100 * 250 fAvs Temperature Doubles every 10C *
INPUT OFFSET CURRENT VCM = 0V 30 * fA
OFFSET VOLTAGEInput Offset Voltage VCM = 0V 0.5 2 1 5 mV
vs Temperature 3 10 5 V/CSupply Rejection VS = 5V to 18V 3 100 * * V/V
NOISEVoltage f = 10Hz 85 * nV/Hz
f = 100Hz 28 * nV/Hzf = 1kHz 17 * nV/Hzf = 10kHz 15 * nV/Hz
fB = 0.1Hz to 10Hz 4 * VPPCurrent f = 10kHz 0.1 * fA/Hz
INPUT IMPEDANCEDifferential 1013 || 1 * || pFCommon-Mode 1015 || 2 * || pF
VOLTAGE RANGECommon-Mode Input Range 10 12 * * VCommon-Mode Rejection VIN = 10V 80 118 * * dB
OPEN-LOOP GAIN, DCOpen-Loop Voltage Gain RL 2k 94 120 * * dB
FREQUENCY RESPONSEUnity Gain, Small Signal 1 * MHzFull Power Response 20Vp-p, RL = 2k 47 * kHzSlew Rate VO = 10V, RL = 2k 1 2.5 * * V/sSettling Time: G = 1, RL = 2k, 10V Step
0.1% 5 * s0.01% 10 * s
Overload Recovery, 50% Overdrive(2) G = 1 5 * s
RATED OUTPUTVoltage Output RL = 2k 12 13 * * VCurrent Output VO = 12V 6 10 * * mALoad Capacitance Stability Gain = +1 1000 * pFShort-Circuit Current 35 55 * * mA
POWER SUPPLYRated Voltage 15 * VVoltage Range, Derated Performance 5 18 * * VCurrent, Quiescent IO = 0mA 1.2 1.8 * * mA
TEMPERATURESpecification Ambient Temperature 40 +85 * * COperating Ambient Temperature 40 +125 * * CStorage 40 +125 * * CThermal Resistance JA, Junction-to-AmbientDIP-8 90 * C/WSO-8 100 * C/W

OPA129 3SBOS026A www.ti.com
1001 1M 10M1k 10k 100k10
POWER SUPPLY REJECTION vs FREQUENCY
Frequency (Hz)
Pow
er S
uppl
y R
ejec
tion
(dB
)
140
120
100
80
60
40
20
0
+PSRR
PSRR
OPEN-LOOP FREQUENCY RESPONSE
Frequency (Hz)
Vol
tage
Gai
n (d
B)
140
120
100
80
60
40
20
0
1001 1M 10M
45
90
135
180
Pul
se S
hift
(deg
rees
)Gain
1k 10k 100k10
PhaseMargin90
Power Supply Voltage ...................................................................... 18VDifferential Input Voltage ............................................................ V to V+Input Voltage Range .................................................................... V to V+Storage Temperature Range ......................................... 40C to +125COperating Temperature Range ...................................... 40C to +125COutput Short Circuit Duration(1) .................................................................. ContinuousJunction Temperature (TJ) ............................................................ +150C
ABSOLUTE MAXIMUM RATINGS
NOTE: (1) Short circuit may be to power supply common at +25C ambient.
PACKAGE INFORMATION(1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR
OPA129P DIP-8 POPA129PB DIP-8 POPA129U SO-8 DOPA129UB SO-8 D
NOTE: (1) For the most current package and ordering information, see thePackage Option Addendum at the end of this data sheet, or see the TI websiteat www.ti.com.
CONNECTION DIAGRAM
ELECTROSTATICDISCHARGE SENSITIVITY
Any integrated circuit can be damaged by ESD. TexasInstruments recommends that all integrated circuits behandled with appropriate precautions. Failure to ob-serve proper handling and installation procedures cancause damage.
ESD damage can range from subtle performance deg-radation to complete device failure. Precision inte-grated circuits may be more susceptible to damagebecause very small parametric changes could causethe device not to meet published specifications.
Top View DIP/SO
TYPICAL PERFORMANCE CURVESAt TA = +25C, +15VDC, unless otherwise noted.
1
2
3
4
8
7
6
5
Substrate
V+
Output
V
NC
In
+In
NC
OPA
NC: No internal connection.

0
Frequency (Hz)
FULL-POWER OUTPUT vs FREQUENCY
Out
put V
olta
ge (
VP
P)
10k 100k1k 1M
30
20
10
10
Frequency (Hz)
INPUT VOLTAGE NOISE SPECTRAL DENSITY
Vol
tage
Den
sity
(nV
/H
z)
1 10 100 1k 10k 100k
1k
100
10
1
0.1
0.01
15 10 5 5 10 15
Common-Mode Voltage (V)
BIAS AND OFFSET CURRENT vs INPUT COMMON-MODE VOLTAGE
Nor
mal
ized
Bia
s an
d O
ffset
Cur
rent
0
BIAS AND OFFSET CURRENT vs TEMPERATURE
Ambient Temperature (C)
Bia
s an
d O
ffset
Cur
rent
(fA
)
100pA
10pA
1pA
100
10
1
50 50 12525 0 25 75 100
IB and IOS
1001 1M 10M1k 10k 100k10
COMMON-MODE REJECTION vs FREQUENCY
Frequency (Hz)
Com
mon
-Mod
e R
ejec
tion
(dB
)
140
120
100
80
60
40
20
0
COMMON-MODE REJECTION vs INPUT COMMON-MODE VOLTAGE
Common-Mode Voltage (V)
Com
mon
-Mod
e R
ejec
tion
(dB
)
70
15 1510 105 0 5
120
110
100
90
80
TYPICAL PERFORMANCE CURVES (Cont.)At TA = +25C, +15VDC, unless otherwise noted.

OPA129 5SBOS026A www.ti.com
OPEN-LOOP GAIN, PSR AND CMR vs TEMPERATURE
PS
R, C
MR
, Vol
tage
Gai
n (d
B)
130
120
110
100
90
CMR
AOL
PSR
75 12550 7525 0 25 50 100
SUPPLY CURRENT vs TEMPERATURE
Sup
ply
Cur
rent
(m
A)
2.0
1.5
1.0
0.5
0
75 12550 7525 0 25 50 100
0
Supply Voltage (VCC)
GAIN BANDWIDTH AND SLEW RATE vs SUPPLY VOLTAGE
Gai
n B
andw
idth
(M
Hz)
5 150 20
3
2
1
10
0
Sle
w R
ate
(v/
s)
6
4
2
+Slew
Slew
GBW
GAIN BANDWIDTH AND SLEW RATE vs TEMPERATURE
Gai
n B
andw
idth
(M
Hz)
Sle
w R
ate
(V/
s)
4
3
2
1
4
3
2
1
00
75 12550 7525 0 25 50 100
LARGE SIGNAL TRANSIENT RESPONSE
Time (s)
Out
put V
olta
ge (
V) 10
0
10
0 5025
TYPICAL PERFORMANCE CURVES (Cont.)At TA = +25C, +15VDC, unless otherwise noted.
SMALL SIGNAL TRANSIENT RESPONSE
Time (s)
Out
put V
olta
ge (
mV
)
80
40
0
40
0 102 4 6 8
805s5V 1s20mV

0
Supply Voltage (VCC)
COMMON-MODE INPUT RANGE vs SUPPLY VOLTAGE
Com
mon

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Ultra-Low Bias Current Difet® Operational Amplifier · PDF fileUltra-Low Bias Current Difet® OPERATIONAL AMPLIFIER FEATURES ULTRA-LOW BIAS CURRENT: 100fA max LOW OFFSET: 2mV max