TRF370417 50-MHz to 6-GHz Quadrature Modulator (Rev. A) · PDF fileTRF370417 50-MHz to 6-GHz Quadrature Modulator ... 1• 76-dBc Single-Carrier WCDMA ACPR at –8 dBm ... fBB = 50

VC

C2

4

GN

D2

3

BB

IN2

2

BB

IP2

1

GN

D2

0G

ND

20

GN

D1

9

VCC18

GND17

RF_OUT16

15

14 GND

13

GN

D87

BB

QN

9

BB

QP

10

GN

D11

GN

D1

2

1

2GND

3LOP

4LON

GND 5

6

0/90

S

NC

NC

B0175-01

NC

NC

NC

Product

Folder

Sample &Buy

Technical

Documents

Tools &

Software

Support &Community

TRF370417SLWS213A –JANUARY 2010–REVISED NOVEMBER 2015

TRF370417 50-MHz to 6-GHz Quadrature Modulator1 Features 3 Description

The TRF370417 is a low-noise direct quadrature1• 76-dBc Single-Carrier WCDMA ACPR at –8 dBm

modulator, capable of converting complex modulatedChannel Powersignals from baseband or IF directly up to RF. The

• Low Noise Floor: –162.3 dBm/Hz at 2140 MHz TRF370417 is a high-performance, superior-linearity• OIP3 of 26.5 dBm at 2140 MHz device that operates at RF frequencies of 50 MHz

through 6 GHz. The modulator is implemented as a• P1dB of 12 dBm at 2140 MHzdouble-balanced mixer. The RF output block consists• Carrier Feedthrough of –38 dBm at 2140 MHz of a differential to single-ended converter and an RF

• Side-Band Suppression of –50 dBc at 2140 MHz amplifier capable of driving a single-ended 50-Ω loadwithout any need of external components. The• Single Supply: 4.5-V–5.5-V OperationTRF370417 requires a 1.7-V common-mode voltage• Silicon Germanium Technology for optimum linearity performance.

• 1.7-V CM at I, Q Baseband InputsDevice Information(1)

2 Applications PART NUMBER PACKAGE BODY SIZE (NOM)• Cellular Base Station Transceiver TRF370417 VQFN(24) 4.00 mm × 4.00 mm

• CDMA: IS95, UMTS, CDMA2000, TD-SCDMA (1) For all available packages, see the orderable addendum atthe end of the data sheet.• TDMA: GSM, IS-136, EDGE/UWC-136

• Multicarrier GSM Block Diagram• WiMAX: 802.16d/e• 3GPP: LTE• Point-to-Point (P2P) Microwave• Wideband Software-Defined Radio• Public Safety: TETRA/APC025• Communication-System Testers• Cable Modem Termination System (CMTS)

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.

http://www.ti.com/product/TRF370417?dcmp=dsproject&hqs=pf

http://www.ti.com/product/TRF370417?dcmp=dsproject&hqs=sandbuy&#samplebuy

http://www.ti.com/product/TRF370417?dcmp=dsproject&hqs=td&#doctype2

http://www.ti.com/product/TRF370417?dcmp=dsproject&hqs=sw&#desKit

http://www.ti.com/product/TRF370417?dcmp=dsproject&hqs=support&#community

http://www.ti.com/product/trf370417?qgpn=trf370417

TRF370417SLWS213A –JANUARY 2010–REVISED NOVEMBER 2015 www.ti.com

Table of Contents7.4 Device Functional Modes........................................ 161 Features .................................................................. 1

8 Application and Implementation ........................ 182 Applications ........................................................... 18.1 Application Information............................................ 183 Description ............................................................. 18.2 Typical Application ................................................. 204 Revision History..................................................... 2

9 Power Supply Recommendations ...................... 235 Pin Configuration and Functions ......................... 310 Layout................................................................... 236 Specifications......................................................... 4

10.1 Layout Guidelines ................................................. 236.1 Absolute Maximum Ratings ...................................... 410.2 Layout Example .................................................... 236.2 ESD Ratings.............................................................. 4

11 Device and Documentation Support ................. 256.3 Recommended Operating Conditions....................... 411.1 Device Support...................................................... 256.4 Thermal Information .................................................. 411.2 Documentation Support ........................................ 266.5 Electrical Characteristics........................................... 511.3 Community Resources.......................................... 266.6 RF Output Parameters.............................................. 511.4 Trademarks ........................................................... 266.7 Typical Characteristics .............................................. 811.5 Electrostatic Discharge Caution............................ 267 Detailed Description ............................................ 1611.6 Glossary ................................................................ 267.1 Overview ................................................................. 16

12 Mechanical, Packaging, and Orderable7.2 Functional Block Diagram ....................................... 16Information ........................................................... 267.3 Feature Description................................................. 16

4 Revision HistoryNOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Original (January 2010) to Revision A Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementationsection, Power Supply Recommendations section, Layout section, Device and Documentation Support section, andMechanical, Packaging, and Orderable Information section. ................................................................................................. 1

2 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated

Product Folder Links: TRF370417


http://www.ti.com

http://www.go-dsp.com/forms/techdoc/doc_feedback.htm?litnum=SLWS213A&partnum=TRF370417


GND

RF_OUT

15

14

13

VC

C

GN

D

BB

IN

BB

IP

GN

D

GN

D

24

23

22

21

20

19

GND

1

2

3LOP

4LON

5GND

GN

D

7 8 9B

BQ

N

10 11

BB

QP

GN

D

12

GN

D

18 VCC

17 GND

16

NC

NC

NC

NC

NC 6

TRF370417www.ti.com SLWS213A –JANUARY 2010–REVISED NOVEMBER 2015

5 Pin Configuration and Functions

RGE Package24-Pin VQFN With Exposed Thermal Pad

Top View

Pin FunctionsPIN

I/O DESCRIPTIONNAME NO.BBIN 22 I In-phase negative inputBBIP 21 I In-phase positive inputBBQN 9 I Quadrature-phase negative inputBBQP 10 I Quadrature-phase positive input

2, 5, 8, 11,GND 12, 14, 17, — Ground

19, 20, 23LON 4 I Local oscillator (LO) negative inputLOP 3 I Local oscillator (LO) positive input

1, 6, 7, 13,NC — No connect15RF_OUT 16 O RF outputVCC 18, 24 — Power supply

Copyright © 2010–2015, Texas Instruments Incorporated Submit Documentation Feedback 3



http://www.ti.com




6 Specifications

6.1 Absolute Maximum Ratingsover operating free-air temperature range (unless otherwise noted) (1)

MIN MAX UNITSupply voltage range –0.3 6 V

TJ Operating virtual junction temperature range –40 150 °CTA Operating ambient temperature range –40 85 °CTstg Storage temperature range –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD RatingsVALUE UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±75V(ESD) Electrostatic discharge VCharged-device model (CDM), per JEDEC specification JESD22- ±75C101 (2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditionsover operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNITVCC Power-supply voltage 4.5 5 5.5 V

6.4 Thermal InformationTRF370417

THERMAL METRIC (1) RGE (VQFN) UNIT24 PINS

RθJA Junction-to-ambient thermal resistance (High-K board, still air) 29.4 °C/WRθJC(top) Junction-to-case (top) thermal resistance 18.6 °C/WRθJB Junction-to-board thermal resistance 14 °C/WψJT Junction-to-top characterization parameter — °C/WψJB Junction-to-board characterization parameter — °C/WRθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics applicationreport, SPRA953.




http://www.ti.com

http://www.ti.com/lit/pdf/spra953




6.5 Electrical Characteristicsover operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNITDC ParametersICC Total supply current (1.7 V CM) TA = 25°C 205 245 mALO Input (50-Ω, Single-Ended)

LO frequency range 0.05 6 GHzfLO LO input power –5 0 12 dBm

LO port return loss 15 dBBaseband InputsVCM I and Q input dc common voltage 1.7BW 1-dB input frequency bandwidth 1 GHz

Input impedance, resistance 5 kΩZI(single Input impedance, parallelended) 3 pFcapacitance

6.6 RF Output Parametersover recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended inquadrature, fBB = 50 kHz (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNITfLO = 70 MHz at 8 dBmG Voltage gain Output rms voltage over input I (or Q) rms voltage –8 dBP1dB Output compression point 7.3 dBmIP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 22 dBmIP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 69 dBm

Carrier feedthrough Unadjusted –46 dBmSideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –27.5 dBc

fLO = 400 MHz at 8 dBmG Voltage gain Output rms voltage over input I (or Q) rms voltage –1.9 dBP1dB Output compression point 11 dBmIP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 24.5 dBmIP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 68 dBm

Carrier feedthrough Unadjusted –38 dBmSideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –40 dBc

fLO = 945.6 MHz at 8 dBmG Voltage gain Output rms voltage over input I (or Q) rms voltage –2.5 dBP1dB Output compression point 11 dBmIP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 25 dBmIP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 65 dBm

Carrier feedthrough Unadjusted –40 dBmSideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –42 dBcOutput return loss 9 dBOutput noise floor ≥13 MHz offset from fLO; Pout = –5 dBm –161.2 dBm/Hz

fLO = 1800 MHz at 8 dBmG Voltage gain Output rms voltage over input I (or Q) rms voltage –2.5 dBP1dB Output compression point 12 dBmIP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 26 dBmIP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 60 dBm





http://www.ti.com




RF Output Parameters (continued)over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended inquadrature, fBB = 50 kHz (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNITOutput return loss 8 dBOutput noise floor ≥13 MHz offset from fLO; Pout = –5 dBm –161.5 dBm/Hz


Carrier feedthrough Unadjusted –38 dBmSideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –50 dBcOutput return loss 8 dBOutput noise floor ≥13 MHz offset from fLO; Pout = –5 dBm –162 dBm/Hz

EVM Error vector magnitude (rms) 1 EDGE signal, Pout = –5 dBm (1) 0.43%1 WCDMA signal; Pout = –8 dBm (2) –761 WCDMA signal; Pout = –8 dBm (3) –74

Adjacent-channel power ratio dBc2 WCDMA signals; Pout = –11 dBm per carrier (3) –684 WCDMA signals; Pout = –14 dBm per carrier (3) –67

ACPR1 WCDMA signal; Pout = –8 dBm (2) –801 WCDMA signal; Pout = –8 dBm (3) –78

Alternate-channel power ratio dBc2 WCDMA signals; Pout = –11 dBm per carrier (3) –724 WCDMA signals; Pout = –14 dBm per carrier (3) –69


Carrier feedthrough Unadjusted –38 dBmSideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –50 dBcOutput return loss 8.5 dBOutput noise floor ≥13 MHz offset from fLO ; Pout = –5 dBm –162.3 dBm/Hz

1 WCDMA signal; Pout = –8 dBm (2) –761 WCDMA signal; Pout = –8 dBm (3) –72

Adjacent-channel power ratio dBc2 WCDMA signal; Pout = –11 dBm per carrier (3) –674 WCDMA signals; Pout = –14 dBm per carrier (3) –66

ACPR1 WCDMA signal; Pout = –8 dBm (2) –801 WCDMA signal; Pout = –8 dBm (3) –78

Alternate-channel power ratio dBc2 WCDMA signal; Pout = –11 dBm (3) –744 WCDMA signals; Pout = –14 dBm per carrier (3) –68

(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.(2) Measured with DAC5687 as source generator; with 2.5 MHz LPF.(3) Measured with DAC5687 as source generator; no external BB filters are used.




http://www.ti.com




RF Output Parameters (continued)over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended inquadrature, fBB = 50 kHz (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNITfLO = 2500 MHz at 8 dBmG Voltage gain Output rms voltage over input I (or Q) rms voltage –1.6 dBP1dB Output compression point 13 dBmIP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 29 dBmIP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 65 dBm


WiMAX 5-MHz carrier, Pout = –8 dBm (4) –47 dBEVM Error vector magnitude (rms)

WiMAX 5-MHz carrier, Pout = 0 dBm (4) –45 dBfLO = 3500 MHz at 8 dBmG Voltage gain Output rms voltage over input I (or Q) rms voltage 0.6 dBP1dB Output compression point 13.5 dBmIP3 Output IP3 fBB = 4.5, 5.5 MHz 25 dBmIP2 Output IP2 fBB = 4.5, 5.5 MHz 65 dBm


WiMAX 5-MHz carrier, Pout = –8 dBm (4) –47 dBEVM Error vector magnitude (rms)

WiMAX 5-MHz carrier, Pout = 0 dBm (4) –43 dBfLO = 4000 MHz at 8 dBmG Voltage gain Output rms voltage over input I (or Q) rms voltage 0.2 dBP1dB Output compression point 12 dBmIP3 Output IP3 fBB = 4.5, 5.5 MHz 22.5 dBmIP2 Output IP2 fBB = 4.5, 5.5 MHz 60 dBm


fLO = 5800 MHz at 4 dBmG Voltage gain Output rms voltage over input I (or Q) rms voltage –5.5 dBP1dB Output compression point 12.9 dBmIP3 Output IP3 fBB = 4.5, 5.5 MHz 25 dBmIP2 Output IP2 fBB = 4.5, 5.5 MHz 55 dBm


EVM Error-vector magnitude WiMAX 5-MHz carrier, Pout = –12 dBm (4) –40 dB

(4) Sideband suppression optimized with LO drive level; EVM contribution from instrument is not accounted for.




http://www.ti.com



f − Frequency − MHz

4

6

8

10

12

14

16

18

20

0 1000 2000 3000 4000 5000 6000

P1d

B −

dB

m

G005

–40°C

25°C

LO = 4 dBmVCC = 5 V

85°C


4

6

8

10

12

14

16

18

20

0 1000 2000 3000 4000 5000 6000

P1d

B −

dB

m

G006

4.5 V

5.5 V

5 V

LO = 4 dBmTA = 25°C


−12

−10

−8

−6

−4

−2

0

2

0 1000 2000 3000 4000 5000 6000

PO

UT −

Out

put P

ower

− d

Bm

G003

VIN = 98 mVrms SELO = 4 dBmTA = 25°C

4.5 V

5 V

5.5 V


−12

−10

−8

−6

−4

−2

0

2

0 1000 2000 3000 4000 5000 6000

PO

UT −

Out

put P

ower

− d

Bm

G004

VIN = 98 mVrms SEVCC = 5 VTA = 25°C

–5 dBm

0 dBm

4 dBm

8 dBm

−20

−15

−10

−5

0

5

10

15

VBB − Baseband Voltage Single-Ended RMS − V

PO

UT −

Out

put P

ower

at 2

.14

GH

z −

dBm

0.01 0.1 1

G001f − Frequency − MHz

−12

−10

−8

−6

−4

−2

0

2

0 1000 2000 3000 4000 5000 6000

PO

UT −

Out

put P

ower

− d

Bm

G002

–40°C

25°C

85°C

VIN = 98 mVrms SELO = 4 dBmVCC = 5 V


6.7 Typical CharacteristicsVCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50kHz (unless otherwise noted).

Figure 2. Output Power vs Frequency and TemperatureFigure 1. Output Power vs Baseband Voltage

Figure 3. Output Power vs Frequency and Supply Voltage Figure 4. Output Power vs Frequency and LO Power

Figure 5. P1dB vs Frequency and Temperature Figure 6. P1dB vs Frequency and Supply Voltage




http://www.ti.com




20

30

40

50

60

70

80

90

100

0 1000 2000 3000 4000 5000 6000

OIP

2 −

dBm

G012

4.5 V

5.5 V

5 V

fBB = 4.5, 5.5 MHzPOUT = −8 dBm Per ToneLO = 4 dBmTA = 25°C

20

30

40

50

60

70

80

90

100

0 1000 2000 3000 4000 5000 6000


OIP

2 −

dBm

G013

–5 dBm

fBB = 4.5, 5.5 MHzPOUT = −8 dBm Per ToneVCC = 5 VTA = 25°C

4 dBm

8 dBm

0 dBm


5

10

15

20

25

30

35

40

0 1000 2000 3000 4000 5000 6000

OIP

3 −

dBm

G009

5 V

4.5 V5.5 V

fBB = 4.5, 5.5 MHzPOUT = −8 dBm Per ToneLO = 4 dBmTA = 25°C

20

30

40

50

60

70

80

90

100

0 1000 2000 3000 4000 5000 6000


OIP

2 −

dBm

G011

–40°C 25°C

85°C

fBB = 4.5, 5.5 MHzPOUT = −8 dBm Per ToneLO = 4 dBmVCC = 5 V


0

5

10

15

20

25

30

35

40

0 1000 2000 3000 4000 5000 6000

OIP

3 −

dBm

G008


–40°C25°C

85°C


0

2

4

6

8

10

12

14

16

18

20

0 1000 2000 3000 4000 5000 6000

P1d

B −

dB

m

G007

–5 dBm

VCC = 5 VTA = 25°C

0 dBm

4 dBm

8 dBm


Typical Characteristics (continued)VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50kHz (unless otherwise noted).

Figure 7. P1dB vs Frequency and LO Power Figure 8. OIP3 vs Frequency and Temperature

Figure 9. OIP3 vs Frequency and Supply Voltage Figure 10. OIP2 vs Frequency and Temperature

Figure 11. OIP2 vs Frequency and Supply Voltage Figure 12. OIP2 vs Frequency and LO POWER




http://www.ti.com




−80

−70

−60

−50

−40

−30

−20

−10

0

0 1000 2000 3000 4000 5000 6000

SS

− U

nadj

uste

d S

ideb

and

Sup

pres

sion

− d

Bc

G018


5.5 V

4.5 V

5 V


−80

−70

−60

−50

−40

−30

−20

−10

0

0 1000 2000 3000 4000 5000 6000

SS

− U

nadj

usre

d S

ideb

and

Sup

pres

sion

− d

Bc

G019

VCC = 5 VTA = 25°C

–5 dBm

0 dBm

8 dBm

4 dBm


−60

−50

−40

−30

−20

−10

0

0 1000 2000 3000 4000 5000 6000

CS

− U

nadj

uste

d C

arrie

r F

eedt

hrou

gh −

dB

m

G016

VCC = 5 VTA = 25°C

0 dBm

8 dBm

4 dBm

–5 dBm


−80

−70

−60

−50

−40

−30

−20

−10

0

0 1000 2000 3000 4000 5000 6000

SS

− U

nadj

uste

d S

ideb

and

Sup

pres

sion

− d

Bc

G017

LO = 4 dBmVCC = 5 V

85°C

25°C

–40°C


−80

−70

−60

−50

−40

−30

−20

−10

0

0 1000 2000 3000 4000 5000 6000

CS

− U

nadj

uste

d C

arrie

r F

eedt

hrou

gh −

dB

m

G014

LO = 4 dBmVCC = 5 V

–40°C

85°C

25°C


−80

−70

−60

−50

−40

−30

−20

−10

0

0 1000 2000 3000 4000 5000 6000

CS

− U

nadj

uste

d C

arrie

r F

eedt

hrou

gh −

dB

m

G015


5.5 V

5 V

4.5 V



Figure 13. Unadjusted Carrier Feedthrough vs Frequency Figure 14. Unadjusted Carrier Feedthrough vs Frequencyand Temperature and Supply Voltage

Figure 15. Unadjusted Carrier Feedthrough vs Frequency Figure 16. Unadjusted Sideband Suppression vs Frequencyand LO Power and Temperature

Figure 17. Unadjusted Sideband Suppression vs Frequency Figure 18. Unadjusted Sideband Suppression vs Frequencyand Supply Voltage and LO Power




http://www.ti.com



−80

−70

−60

−50

−40

−30

−20

−10

0

2040 2080 2120 2160 2200 2240


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G025

85°C–40°C

25°C

Adj at 2140 MHz @ 25°CLO = 4 dBmVCC = 5 V

−80

−70

−60

−50

−40

−30

−20

−10

0

900 910 920 930 940 950 960 970 980 990 1000


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G024

85°C

–40°C25°C

Adj at 942.6 MHz @ 25°CLO = 4 dBmVCC = 5 V

POUT − Output Power − dBm

−166

−164

−162

−160

−158

−156

−154

−10−9 −8 −7 −6 −5 −4 −3 −2 −1 0 1 2 3 4 5

Noi

se a

t 13-

MH

z O

ffset

− d

Bm

/Hz

G022

948.5 MHz

VCC = 5 VLO = 8 dBmTA = 25°C

1960 MHz

1800 MHz

2140 MHz

5600 MHz

−80

−70

−60

−50

−40

−30

−20

−10

0

60 62 64 66 68 70 72 74 76 78 80


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G023


–40°C

85°C25°C

f − Frequency − GHz

−170

−168

−166

−164

−162

−160

−158

−156

−154

−152

−150

0.8 1.4 2.0 2.6 3.2 3.8 4.4 5.0 5.6

Noi

se a

t 13-

MH

z O

ffset

− d

Bm

/Hz

G020

–40°C25°C

POUT = −5 dBmLO = 8 dBmVCC = 5 V

85°C

f − Frequency − GHz

−170

−168

−166

−164

−162

−160

−158

−156

−154

−152

−150

0.8 1.4 2.0 2.6 3.2 3.8 4.4 5.0 5.6

Noi

se a

t 13-

MH

z O

ffset

− d

Bm

/Hz

G021

5.5 V

POUT = −5 dBmLO = 8 dBmTA = 25°C

4.5 V5 V



Figure 19. Noise at 13-MHz Offset (dBm/Hz) vs Frequency Figure 20. Noise at 13-MHz Offset (dBm/Hz) vs Frequencyand Temperature and Supply Voltage

Figure 21. Noise at 13-MHz Offset (dBm/Hz) vs Output Figure 22. Adjusted Carrier Feedthrough vs Frequency andPower Temperature

Figure 23. Adjusted Carrier Feedthrough vs Frequency and Figure 24. Adjusted Carrier Feedthrough vs Frequency andTemperature Temperature




http://www.ti.com



−80

−70

−60

−50

−40

−30

−20

−10

0

900 910 920 930 940 950 960 970 980 990 1000


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G030

85°C

–40°C

25°C

Adj at 942.6 MHz @ 25°CLO = 4 dBmVCC = 5 V

−80

−70

−60

−50

−40

−30

−20

−10

0

2040 2080 2120 2160 2200 2240


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G031

–40°C85°C

25°C


−80

−70

−60

−50

−40

−30

−20

−10

0

5700 5740 5780 5820 5860 5900


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G028

–40°C

25°C85°C


−80

−70

−60

−50

−40

−30

−20

−10

0

60 62 64 66 68 70 72 74 76 78 80


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G029

–40°C25°C

85°C


−80

−70

−60

−50

−40

−30

−20

−10

0

2400 2440 2480 2520 2560 2600


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G026

85°C

–40°C

25°C


−80

−70

−60

−50

−40

−30

−20

−10

0

3400 3440 3480 3520 3560 3600


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G027

–40°C

25°C85°C




Figure 25. Adjusted Carrier Feedthrough vs Frequency and Figure 26. Adjusted Carrier Feedthrough vs Frequency andTemperature Temperature

Figure 27. Adjusted Carrier Feedthrough vs Frequency and Figure 28. Adjusted Sideband Supression vs Frequency andTemperature Temperature

Figure 30. Adjusted Sideband Supression vs Frequency andFigure 29. Adjusted Sideband Supression vs Frequency andTemperatureTemperature




http://www.ti.com



10

13

16

19

22

25

28

31

34

37

40

1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80

VCM − Common-Mode Voltage − V

OIP

3 −

dBm

G037


25°C

–40°C 85°C

10

12

14

16

18

20

22

24

26

28

30

32

1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80


OIP

3 −

dBm

G036


25°C

–40°C

85°C

−80

−70

−60

−50

−40

−30

−20

−10

0

5700 5740 5780 5820 5860 5900


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G034

25°C

–40°C

85°C


10

12

14

16

18

20

22

24

26

28

30

1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80


OIP

3 −

dBm

G035


25°C

–40°C

85°C

−80

−70

−60

−50

−40

−30

−20

−10

0

2400 2440 2480 2520 2560 2600


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G032

25°C

–40°C

85°C


−80

−70

−60

−50

−40

−30

−20

−10

0

3400 3440 3480 3520 3560 3600


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G033

25°C

–40°C

85°C




Figure 31. Adjusted Sideband Supression vs Frequency and Figure 32. Adjusted Sideband Supression vs Frequency andTemperature Temperature

Figure 34. OIP3 vs Common-Mode Voltage at 948.5 MHzFigure 33. Adjusted Sideband Supression vs Frequency andTemperature

Figure 35. OIP3 vs Common-Mode Voltage at 1800 MHz Figure 36. OIP3 vs Common-Mode Voltage at 2140 MHz




http://www.ti.com



CS − Unadjusted Carrier Feedthrough − dBm

0

2

4

6

8

10

12

14

16

18

−24 −28 −32 −36 −40 −44 −48 −52 −56 −60 −64

Dis

trib

utio

n −

%

G044SS − Unadjusted Sideband Suppression − dBc

0

5

10

15

20

25

30

−36 −40 −44 −48 −52 −56 −60 −64 −68 −72 −76

Dis

trib

utio

n −

%

G045

OIP3 − dBm

0

10

20

30

40

50

60

24 25 26 27 28 29

Dis

trib

utio

n −

%

G042OIP2 − dBm

0

5

10

15

20

25

56 58 60 62 64 66 68 70 72

Dis

trib

utio

n −

%

G043

10

13

16

19

22

25

28

31

34

37

40

1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80


OIP

3 −

dBm

G038


25°C

–40°C

85°C

10

15

20

25

30

35

40

−12 −10 −8 −6 −4 −2 0 2 4

POUT − Total Output Power − dBm

OIP

3 −

dBm

G039

fBB = 4.5, 5.5 MHzLO = 4 dBmVCC = 5 VTA = 25°C 1800 MHz

948.5 MHz



Figure 37. OIP3 vs Common-Mode Voltage at 5800 MHz Figure 38. OIP3 vs Total Output Power

Figure 40. OIP2 at 1960 MHz DistributionFigure 39. OIP3 at 1960 MHz Distribution

Figure 42. Unadjusted Sideband Suppression at 1960 MHzFigure 41. Unadjusted Carrier Feedthrough at 1960 MHzDistributionDistribution




http://www.ti.com



P1dB − dBm

0

5

10

15

20

25

30

35

11.4 11.6 11.8 12 12.2 12.4

Dis

trib

utio

n −

%

G046



Figure 43. P1dB at 1800 MHz Distribution




http://www.ti.com



VC

C2

4

GN

D2

3

BB

IN2

2

BB

IP2

1

GN

D2

0G

ND

20

GN

D1

9

VCC18

GND17

RF_OUT16

15

14 GND

13

GN

D87

BB

QN

9

BB

QP

10

GN

D11

GN

D1

2

1

2GND

3LOP

4LON

GND 5

6

0/90

S

NC

NC

B0175-01

NC

NC

NC


7 Detailed Description

7.1 OverviewTRF370417 is a low-noise direct quadrature modulator with high linearity, capable of converting complexmodulated signals from baseband or IF directly to RF. With high-performance and superior-linearity, theTRF370417 is an ideal device to up-convert to RF frequencies from 50-MHz through 6-GHz. The basebandinputs can support an input bandwidth up to 1-GHz. The modulator is implemented as a double-balanced mixer.The RF output block contains a differential to single-ended converter to drive a 50-ohm load without the need forexternal matching components. The baseband input common-mode voltage is set at 1.7-V for optimum linearityperformance.

7.2 Functional Block Diagram

NOTE: NC = No connection

7.3 Feature DescriptionTRF370417 supports an I/Q baseband input bandwidth of 1-GHz. With this bandwidth capability the input signalcan be centered at a high IF frequency to provide frequency separation from unwanted carrier feed-through orsideband image. Utilizing the full baseband bandwidth yields an RF output bandwidth up to 2-GHz.

7.4 Device Functional Modes

7.4.1 Baseband Common-Mode VoltageTRF370417 input baseband pins operate around a common-mode voltage of 1.7-V. Variation around thiscommon-mode is possible but best linearity performance is generally achieved when kept at nominal voltage.




http://www.ti.com




Device Functional Modes (continued)7.4.2 LO Drive LevelThe LO drive level is nominally specified at 4-dBm. The device can accept a large range of LO drive level. Ahigher drive level generally provides better output noise performance and some linearity improvement. There issome trade-off between carrier feed-through and sideband suppression performance that is dependent onfrequency and drive level. The LO drive level of 4-dB is deemed a good balance between those two parametersacross frequency.




http://www.ti.com




8 Application and Implementation

NOTEInformation in the following applications sections is not part of the TI componentspecification, and TI does not warrant its accuracy or completeness. TI’s customers areresponsible for determining suitability of components for their purposes. Customers shouldvalidate and test their design implementation to confirm system functionality.

8.1 Application Information

8.1.1 Basic Connections• See Figure 44 for proper connection of the TRF3704 modulator.• Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown

on pins 4, 5, 6, and 7.• Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.• Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).

This should be ac-coupled through a 100-pF capacitor.• Terminate the ac-coupled LON with 50 Ω to GND.• Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.• The differential baseband inputs should be set to the proper common-mode voltage of 1.7 V.• RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This

pin should also be ac-coupled through a 100-pF capacitor.• All NC pins can be left floating.

8.1.1.1 ESD SensitivityRF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devicesshould be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the ratedlevel. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board(PCB). Follow these guidelines for optimal ESD protection:• Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore,

customers’ ESD precautions should be consistent with these ratings.• The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly

connect the device pins to off-board circuits.




http://www.ti.com



SMA_END

SMA_END SMA_END

SMA_END

SMA_ENDSMA_END

SMA_END

+C6

4.7uF

+

R4

0

C3 100pFC3 100pF

NC11

GND12

LOP3

LON4

GND25

NC26

NC

37

GN

D3

8

BB

QN

9

BB

QP

10

GN

D4

11

GN

D5

12

NC4 13GND6 14

NC5 15RF_OUT 16

GND7 17VCC1 18

GN

D8

19

GN

D9

20

BB

IP2

1B

BIN

22

GN

D1

02

3V

CC

22

4G

ND

25

R3

0

C5

1000pF

J1LOP

1

2 3 4 5

C15

10pF

C10

.1uF

DNI

R2

0

J3BBIN

1

2 3 4 5

C13

.1uF

DNI

C14

10pF

C12

.1uF

DNI

J5QN

1

2 3 4 5

J7

RF_OUT

1

2345C9

1uFDNI

C8

1uF

DNI

C1 100pF

+C7

RED BLK

4.7uF

+

J2

LON

1

2 3 4 5

J4

BBIP

J4

BBIP

1

2345

J6QPJ6QP

1

2345

C2 100pF

R1 0

0

DNI

C11

.1uF

DNI

R5

0

C4

1000pF

S0214-03

U1TRF370x

TP2VCC1

TP3GND

TP1GND

TP4VCC2

BLK RED

TRF370417

0

0

0

DNI

DNI

TRF370315

TRF370317

TRF370333


Application Information (continued)

NOTE: DNI = Do not install.

Figure 44. TRF3704 EVM Schematic

8.1.2 GSM ApplicationsThe TRF370417 is suited for GSM and multicarrier GSM applications because of its high linearity and low noiselevel over the entire recommended operating range. It also has excellent EVM performance, which makes it idealfor the stringent GSM/EDGE applications.




http://www.ti.com



16

DAC5687

16

CLK1

RF Out

VCXO

Ref Osc

CLK2

CDCM7005

Clock Gen

TRF3761

PLL

LO Generator

TRF370x

I/Q

Modulator

B0176-02


Application Information (continued)8.1.3 WCDMA ApplicationsThe TRF370417 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR)and noise density are critically important. Using Texas instruments’ DAC568X series of high-performance digital-to-analog converters as depicted in Figure 44, excellent ACPR levels were measured with one-, two-, and four-WCDMA carriers. See Electrical Characteristics, fLO = 1960 MHz and fLO = 2140 MHz for exact ACPR values.

8.2 Typical Application

Figure 45. Typical Transmit Setup Block Diagram

8.2.1 Design RequirementsTable 1 lists the requirements and limitations for pin termination.

Table 1. Pin Termination Requirements and LimitationsNAME PIN NO. DESCRIPTION

Baseband in-quadrature input: negative terminal. Optimal linearity is obtained if VCM is 1.7-V.BBQM 9 Normally terminated in 50 ΩBaseband in-quadrature input: positive terminal. Optimal linearity is obtained if VCM is 1.7-V. NormallyBBQP 10 terminated in 50 ΩBaseband in-phase input: positive terminal. Optimal linearity is obtained if VCM is 1.7-V. NormallyBBIP 21 terminated in 50 ΩBaseband in-phase input: negative terminal. Optimal linearity is obtained if VCM is 1.7-V. NormallyBBIM 22 terminated in 50 ΩLocal oscillator input: positive terminal. This is preferred port when driving single ended. Normally ACLOP 3 coupled and terminated in 50 ΩLocal oscillator input: negative terminal. When driving LO single-ended, normally AC coupled andLOM 4 terminated in 50 Ω.

RFOUT 16 RF output. Normally AC coupled. Recommend to terminate with broadband 50- Ω load.5.0-V power supply. Can be tied together and sourced from a single clean supply. Each pin should beVCC 18, 24 properly RF bypassed.




http://www.ti.com




8.2.2 Detailed Design Procedure

Table 2. Bill of Materials for TRF370x EVMITEM REFERENCE MFT. PARTQUANTITY VALUE PCB FOOTPRINT MFR. NAME NOTENUMBER DESIGNATOR NUMBER

1 3 C1, C2, C3 100 pF 0402 PANASONIC ECJ-0EC1H101J

2 2 C4, C5 1000 pF 0402 PANASONIC ECJ-0VC1H102J

3 2 C6, C7 4.7 μF TANT_A KERMET T491A475K016AS

ECJ-4 0 C8, C9 1 μF 0402 PANASONIC DNI0EC1H010C_DNI

C10, C11, C12, ECJ-5 0 0.1 μF 0402 PANASONIC DNIC13 0EB1A104K_DNI

GRM1555C1H100JZ06 2 C14, C15 10 pF 0402 MURATA 1D

J1, J2, J3, J4, JOHNSON7 7 LOP SMA_SMEL_250x215 142-0711-821J5, J6, J7 COMPONENTS

8 2 R1 0 0402 PANASONIC ERJ-2GE0R00 OR EQUIVALENT

9 4 R2, R3, R4, R5 0 0402 PANASONIC ERJ-2GE0R00 OR EQUIVALENT

QFN_24_163x163_ For TRF370333TRF370333 TI TRF3703330p50mm EVM, TI supplied

QFN_24_163x163_ For TRF370317TRF370317 TI TRF3703170p50mm EVM, TI supplied10 1 U1



11 2 TP1, TP3 BLK TP_THVT_100_RND KEYSTONE 5001K

12 2 TP2, TP4 RED TP_THVT_100_RND KEYSTONE 5000K

8.2.2.1 DAC-to-Modulator Interface NetworkFor optimum linearity and dynamic range, the digital-to-analog converter (DAC) can interface directly with themodulator; however, the common-mode voltage of each device must be maintained. A passive interface circuit isused to transform the common-mode voltage of the DAC to the desired set-point of the modulator. The passivecircuit invariably introduces some insertion loss between the two devices. In general, it is desirable to keep theinsertion loss as low as possible to achieve the best dynamic range. Figure 46 shows the passive interconnectcircuit for two different topologies. One topology is used when the DAC (such as the DAC568x) common-mode islarger than the modulator. The voltage Vee is nominally set to ground, but can be set to a negative voltage toreduce the insertion loss of the network. The second topology is used when the DAC (such as the DAC56x2)common-mode is smaller than the modulator. Note that this passive interconnect circuit is duplicated for each ofthe differential I/Q branches.




http://www.ti.com



R1

R2

R3Id

DAC568x TRF370x

It

Vdd

3.3V

1.7V

Vee

Vdd

R1

R2

R3Id

It

DAC56x2 TRF370x

1.7V

0.7V

Topology 1: DAC Vcm > TRF370x Vcm

Topology 2: DAC Vcm < TRF370x Vcm

S0338-01


Figure 46. Passive DAC-to-Modulator Interface Network

Table 3. DAC-to-Modulator Interface Network ValuesTOPOLOGY 1

TOPOLOGY 2WITH VEE = 0 V WITH VEE = 5 V

DAC Vcm [V] 3.3 3.3 0.7TRF370x Vcm [V] 1.7 1.7 1.7Vdd [V] 5 5 5Vee [V] Gnd –5 N/AR1 [Ω] 66 56 960R2 [Ω] 100 80 290R3 [Ω] 108 336 52Insertion loss [dB] 5.8 1.9 2.3




http://www.ti.com




−90

−87

−84

−81

−78

−75

−72

−69

−66

−63

−60

−20 −18 −16 −14 −12 −10 −8 −6 −4

AC

PR

−A

dja

cent

Channel P

ow

er

Ratio

−dB

c

G040

One Carrier, WCDMA at 1960 MHz

DAC5687 as Source with 2.5 MHz LPF

Adj

Alt


−90

−87

−84

−81

−78

−75

−72

−69

−66

−63

−60

−20 −18 −16 −14 −12 −10 −8 −6 −4

AC

PR

−A

dja

cent

Channel P

ow

er

Ratio

−dB

c

G041

One Carrier, WCDMA at 2140 MHz

DAC5687 as Source with 2.5 MHz LPF

Adj

Alt


8.2.3 Application Curves

Figure 47. Adjacent Channel Power Ratio vs Output Power Figure 48. Adjacent Channel Power Ratio vs. Outputat 1960 MHz Power at 2140 MHz

9 Power Supply RecommendationsThe TRF370417 is powered by supplying a nominal 5 V to pins 18 and 24. These supplies can be tied togetherand sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin.Ground pin connections should have at least one ground via close to each ground pin to minimize groundinductance. The thermal pad must be tied to ground, preferably with the recommended ground via pattern toprovide a good thermal conduction path to the alternate side of the board and to provide a good RF ground forthe device. (Refer to Layout Guidelines for additional information.)

10 Layout

10.1 Layout GuidelinesThe TRF370417 device is fitted with a ground slug on the back of the package that must be soldered to theprinted circuit board (PCB) ground with adequate ground vias to ensure a good thermal and electricalconnection. The recommended via pattern and ground pad dimensions are shown in Figure 76. Therecommended via diameter is 10 mils (0.10 in or 0.25 mm). The ground pins of the device can be directly tied tothe ground slug pad for a low-inductance path to ground. Additional ground vias may be added if space allows.Decoupling capacitors at each of the supply pins are strongly recommended. The value of these capacitorsshould be chosen to provide a low-impedance RF path to ground at the frequency of operation. Typically, thevalue of these capacitors is approximately 10 pF or lower. The device exhibits symmetry with respect to thequadrature input paths. TI recommends that the PCB layout maintain this symmetry to ensure that thequadrature balance of the device is not impaired. The I/Q input traces should be routed as differential pairs andthe respective lengths all kept equal to each other. On the RF traces, maintain proper trace widths to keep thecharacteristic impedance of the RF traces at a nominal 50 Ω.

10.2 Layout ExampleFigure 49 shows the top view of the TRF3704 EVM board.




http://www.ti.com



2,4

5

1,1

6

2,45

Æ 0,254

1,160,508

0,5

08


Layout Example (continued)

Figure 49. PCB Via Ground Layout Guide




http://www.ti.com



f

f

fn

f

f

LO

LSBn

BBn

3rdH/L

2ndH/L

BBn

BBn

BBn

BBn

BBn

BBn

rd

rd

rd

rd

rd

rd

3

2

rd

nd

= Baseband Frequency

= RF Frequency

= 3 Order Intermodulation Product Frequency (High Side/Low Side)

= 2 Order

rd

ndIntermodulation Product (High Side/Low Side)

= Local Oscillator Frequency

= Lower Sideband Frequency

BBn

rd

BBn

BBn

BBn

BBn

BBn

rd

rd

rd

rd

rd

Unw

ante

d Sideb

and

2

Ord

er IM

nd 3Ord

er IM

rd

Des

ired

Signa

l

LSB2 = LO

–fBB2

LSB1 = LO

–fBB1

LO f

= (f

–f

) + LO

2ndL

BB2

BB1

f

= 2f1–

f2

3rdL

f1 = f

+ LO

BB1

f2 = f

+ LO

BB2

f

= 2f2–

f1

3rdH

f

= (f

+ f

) + LO

2ndH

BB2

BB1

M0104-01


11 Device and Documentation Support

11.1 Device Support

11.1.1 Device NomenclatureAdjusted (Optimized) Carrier Feedthrough This differs from the unadjusted suppression number in that the

baseband input dc offsets are iteratively adjusted around their theoretical value of VCM to yield themaximum suppression of the LO component in the output spectrum. This is measured in dBm.

Adjusted (Optimized) Sideband Suppression This differs from the unadjusted sideband suppression in thatthe gain and phase of the baseband inputs are iteratively adjusted around their theoretical values tomaximize the amount of sideband suppression. This is measured in dBc.

Suppressions Over Temperature This specification assumes that the user has gone though the optimizationprocess for the suppression in question, and set the optimal settings for the I, Q inputs. Thisspecification then measures the suppression when temperature conditions change after the initialcalibration is done.

Figure 50 shows a simulated output and illustrates the respective definitions of various termsused in this data sheet.

Figure 50. Graphical Illustration of Common Terms

Unadjusted Carrier Feedthrough This specification measures the amount by which the local oscillatorcomponent is suppressed in the output spectrum of the modulator. If the common-mode voltage ateach of the baseband inputs is exactly the same and there was no dc imbalance introduced by themodulator, the LO component would be naturally suppressed. DC offset imbalances in the deviceallow some of the LO component to feed through to the output. Because this phenomenon isindependent of the RF output power and the injected LO input power, the parameter is expressedin absolute power, dBm.

Unadjusted Sideband Suppression This specification measures the amount by which the unwanted sidebandof the input signal is suppressed in the output of the modulator, relative to the wanted sideband. Ifthe amplitude and phase within the I and Q branch of the modulator were perfectly matched, theunwanted sideband (or image) would be naturally suppressed. Amplitude and phase imbalance inthe I and Q branches results in the increase of the unwanted sideband. This parameter ismeasured in dBc relative to the desired sideband.




http://www.ti.com




11.2 Documentation Support

11.2.1 Related DocumentationFor related documentation, see the documents that follow:• TRF370x User's Guide• TRF370417: Optimizing OIP3 Performance at Local Oscillator (LO) Frequencies Beyond 4.5 GHz• High Bandwidth, High Frequency Transmitter Reference Design

11.3 Community ResourcesThe following links connect to TI community resources. Linked contents are provided "AS IS" by the respectivecontributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms ofUse.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaborationamong engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and helpsolve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools andcontact information for technical support.

11.4 TrademarksE2E is a trademark of Texas Instruments.All other trademarks are the property of their respective owners.

11.5 Electrostatic Discharge CautionThese devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.

11.6 GlossarySLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable InformationThe following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.




http://www.ti.com

http://www.ti.com/lit/ug/slwu062/slwu062.pdf

http://www.ti.com/lit/an/slaa532/slaa532.pdf

http://www.ti.com/lit/ug/tidu579/tidu579.pdf

http://www.ti.com/corp/docs/legal/termsofuse.shtml

http://www.ti.com/corp/docs/legal/termsofuse.shtml

http://e2e.ti.com

http://support.ti.com/

http://www.ti.com/lit/pdf/SLYZ022



PACKAGE OPTION ADDENDUM

www.ti.com 3-Nov-2015

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TRF370417IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF370417

TRF370417IRGET ACTIVE VQFN RGE 24 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF370417

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

http://www.ti.com/product/TRF370417?CMP=conv-poasamples#samplebuy

http://www.ti.com/product/TRF370417?CMP=conv-poasamples#samplebuy

http://www.ti.com/productcontent

PACKAGE OPTION ADDENDUM


Addendum-Page 2

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TRF370417IRGER VQFN RGE 24 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q1

TRF370417IRGET VQFN RGE 24 250 180.0 12.4 4.3 4.3 1.5 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION


Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TRF370417IRGER VQFN RGE 24 3000 336.6 336.6 28.6

TRF370417IRGET VQFN RGE 24 250 210.0 185.0 35.0

PACKAGE MATERIALS INFORMATION


Pack Materials-Page 2

GENERIC PACKAGE VIEW

Images above are just a representation of the package family, actual package may vary.Refer to the product data sheet for package details.

RGE 24 VQFN - 1 mm max heightPLASTIC QUAD FLATPACK - NO LEAD

4204104/H

www.ti.com

PACKAGE OUTLINE

C

SEE TERMINALDETAIL

24X 0.30.2

2.45 0.1

24X 0.50.3

1 MAX

(0.2) TYP

0.050.00

20X 0.5

2X2.5

2X 2.5

A 4.13.9

B

4.13.9

0.30.2

0.50.3

VQFN - 1 mm max heightRGE0024BPLASTIC QUAD FLATPACK - NO LEAD

4219013/A 05/2017

PIN 1 INDEX AREA

0.08 C

SEATING PLANE

1

6 13

18

7 12

24 19

(OPTIONAL)PIN 1 ID

0.1 C A B0.05

EXPOSEDTHERMAL PAD

25 SYMM

SYMM

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

SCALE 3.000

DETAILOPTIONAL TERMINAL

TYPICAL

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MINALL AROUND

0.07 MAXALL AROUND

24X (0.25)

24X (0.6)

( 0.2) TYPVIA

20X (0.5)

(3.8)

(3.8)

( 2.45)

(R0.05)TYP

(0.975) TYP


4219013/A 05/2017

SYMM

1

6

7 12

13

18

1924

SYMM

LAND PATTERN EXAMPLEEXPOSED METAL SHOWN

SCALE:15X

NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented.

25

SOLDER MASKOPENING

METAL UNDERSOLDER MASK

SOLDER MASKDEFINED

EXPOSEDMETAL

METAL

SOLDER MASKOPENING

SOLDER MASK DETAILS

NON SOLDER MASKDEFINED

(PREFERRED)

EXPOSEDMETAL

www.ti.com

EXAMPLE STENCIL DESIGN

24X (0.6)

24X (0.25)

20X (0.5)

(3.8)

(3.8)

4X ( 1.08)

(0.64)TYP

(0.64) TYP

(R0.05) TYP


4219013/A 05/2017

NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations.

25

SYMM

METALTYP

SOLDER PASTE EXAMPLEBASED ON 0.125 mm THICK STENCIL

EXPOSED PAD 25

78% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGESCALE:20X

SYMM

1

6

7 12

13

18

1924

IMPORTANT NOTICE

Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to itssemiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyersshould obtain the latest relevant information before placing orders and should verify that such information is current and complete.TI’s published terms of sale for semiconductor products (http://www.ti.com/sc/docs/stdterms.htm) apply to the sale of packaged integratedcircuit products that TI has qualified and released to market. Additional terms may apply to the use or sale of other types of TI products andservices.Reproduction of significant portions of TI information in TI data sheets is permissible only if reproduction is without alteration and isaccompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such reproduceddocumentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statementsdifferent from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for theassociated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Buyers and others who are developing systems that incorporate TI products (collectively, “Designers”) understand and agree that Designersremain responsible for using their independent analysis, evaluation and judgment in designing their applications and that Designers havefull and exclusive responsibility to assure the safety of Designers' applications and compliance of their applications (and of all TI productsused in or for Designers’ applications) with all applicable regulations, laws and other applicable requirements. Designer represents that, withrespect to their applications, Designer has all the necessary expertise to create and implement safeguards that (1) anticipate dangerousconsequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that might cause harm andtake appropriate actions. Designer agrees that prior to using or distributing any applications that include TI products, Designer willthoroughly test such applications and the functionality of such TI products as used in such applications.TI’s provision of technical, application or other design advice, quality characterization, reliability data or other services or information,including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended toassist designers who are developing applications that incorporate TI products; by downloading, accessing or using TI Resources in anyway, Designer (individually or, if Designer is acting on behalf of a company, Designer’s company) agrees to use any particular TI Resourcesolely for this purpose and subject to the terms of this Notice.TI’s provision of TI Resources does not expand or otherwise alter TI’s applicable published warranties or warranty disclaimers for TIproducts, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections,enhancements, improvements and other changes to its TI Resources. TI has not conducted any testing other than that specificallydescribed in the published documentation for a particular TI Resource.Designer is authorized to use, copy and modify any individual TI Resource only in connection with the development of applications thatinclude the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISETO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTYRIGHT OF TI OR ANY THIRD PARTY IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right, orother intellectual property right relating to any combination, machine, or process in which TI products or services are used. Informationregarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty orendorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of thethird party, or a license from TI under the patents or other intellectual property of TI.TI RESOURCES ARE PROVIDED “AS IS” AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES ORREPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TOACCURACY OR COMPLETENESS, TITLE, ANY EPIDEMIC FAILURE WARRANTY AND ANY IMPLIED WARRANTIES OFMERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF ANY THIRD PARTY INTELLECTUALPROPERTY RIGHTS. TI SHALL NOT BE LIABLE FOR AND SHALL NOT DEFEND OR INDEMNIFY DESIGNER AGAINST ANY CLAIM,INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OFPRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL,DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES INCONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEENADVISED OF THE POSSIBILITY OF SUCH DAMAGES.Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements.Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, suchproducts are intended to help enable customers to design and create their own applications that meet applicable functional safety standardsand requirements. Using products in an application does not by itself establish any safety features in the application. Designers mustensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products inlife-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use.Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., lifesupport, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, allmedical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S.TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product).Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applicationsand that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatoryrequirements in connection with such selection.Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s non-compliance with the terms and provisions of this Notice.

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265Copyright © 2018, Texas Instruments Incorporated

http://www.ti.com/sc/docs/stdterms.htm