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CMOS VLSI Design CMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam Jamil Adopted from slides of the textbook

Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

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Page 1: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed.

Transient

Response:

Delay

Models

Dr. Bassam Jamil

Adopted from slides of the

textbook

Page 2: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed.

Topics

Delay definitions

Delay Calculations Using Differential Equations

RC Delay Model

– Elmore Delay

Linear Delay Model

– Logical Effort

3: CMOS Transistor Theory 2

Page 3: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 3

Transient Response

DC analysis tells us Vout if Vin is constant

Transient analysis tells us Vout(t) if Vin(t) changes

– Requires solving differential equations

– Usually, we are calculate the delays, transition

time, power, energy

Input is usually considered to be a step or ramp

– From 0 to VDD or vice versa

Page 4: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 4

Delay Definitions

tpdr: rising propagation delay

– From input to rising output crossing VDD/2

tpdf: falling propagation delay

– From input to falling output crossing VDD/2

tpd: average propagation delay

– tpd = (tpdr + tpdf)/2

tr: rise time

– From output crossing 0.2 VDD to 0.8 VDD

tf: fall time

– From output crossing 0.8 VDD to 0.2 VDD

Page 5: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 5

Delay Definitions

tcdr: rising contamination delay

– From input to rising output crossing VDD/2

tcdf: falling contamination delay

– From input to falling output crossing VDD/2

tcd: average contamination delay

– tpd = (tcdr + tcdf)/2

Page 6: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 6

Simulated Inverter Delay

Solving differential equations by hand is too hard

SPICE simulator solves the equations numerically

– Uses more accurate I-V models too!

But simulations take time to write, may hide insight

(V)

0.0

0.5

1.0

1.5

2.0

t(s)0.0 200p 400p 600p 800p 1n

tpdf

= 66ps tpdr

= 83psVin

Vout

Page 7: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 7

Inverter Step Response

Ex: find step response of inverter driving load cap

0

0

( )

( )

( )

(

(

)

)

DD

DD

loa

d

ou

i

d

t

o

n

ut sn

V

V

u t t V

t t

V t

V

d

dt C

t

I t

0

2

2

0

(

2

)

( )( )

DD t DD t

DD

out

outout ot Dt

n

u

ds

D t

I

t t

V V V V

V

V

V tV Vt

t

VV V

Vout

(t)

Vin(t)

t0

t

Vin(t)

Vout

(t)C

load

Idsn

(t)

Page 8: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 8

Delay Estimation

We would like to be able to easily estimate delay

– Not as accurate as simulation

– But easier to ask “What if?”

The step response usually looks like a 1st order RC response with a decaying exponential.

Use RC delay models to estimate delay

– C = total capacitance on output node

– Use effective resistance R

– So that tpd = RC

Characterize transistors by finding their effective R

– Depends on average current as gate switches

Page 9: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 9

Effective Resistance

Shockley models have limited value

– Not accurate enough for modern transistors

– Too complicated for much hand analysis

Simplification: treat transistor as resistor

– Replace Ids(Vds, Vgs) with effective resistance R

• Ids = Vds/R

– R averaged across switching of digital gate

Too inaccurate to predict current at any given time

– But good enough to predict RC delay

Page 10: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 10

RC Delay Model

Use equivalent circuits for MOS transistors

– Ideal switch + capacitance and ON resistance

– Unit nMOS has resistance R, capacitance C

– Unit pMOS has resistance 2R, capacitance C

Capacitance proportional to width

Resistance inversely proportional to width

kg

s

d

g

s

d

kCkC

kCR/k

kg

s

d

g

s

d

kC

kC

kC

2R/k

Page 11: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 11

RC Values

Capacitance

– C = Cg = Cs = Cd = 2 fF/mm of gate width in 0.6 mm

– Gradually decline to 1 fF/mm in 65 nm

Resistance

– R 10 KW•mm in 0.6 mm process

– Improves with shorter channel lengths

– 1.25 KW•mm in 65 nm process

Unit transistors

– May refer to minimum contacted device (4/2 l)

– Or maybe 1 mm wide device

– Doesn’t matter as long as you are consistent

Page 12: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 12

Inverter Delay Estimate

Estimate the delay of a fanout-of-1 inverter

C

CR

2C

2C

R

2

1A

Y

C

2C

C

2C

C

2C

RY

2

1

d = 6RC

Page 13: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 13

Delay Model Comparison

Page 14: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 14

Example: 3-input NAND

Sketch a 3-input NAND with transistor widths chosen to

achieve effective rise and fall resistances equal to a unit

inverter (R).

3

3

3

2 2 2

Page 15: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 15

2 2 2

3

3

33C

3C

3C

3C

2C

2C

2C

2C

2C

2C

3C

3C

3C

2C 2C 2C

2 2 2

3

3

33C

3C

5C

5C

5C

9C

3-input NAND Caps

Annotate the 3-input NAND gate with gate and diffusion

capacitance.

For n-input NAND Gate

(2+n)C

3nC

Page 16: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed.

3-input NAND Equivalent Circuit

3: CMOS Transistor Theory 16

2 2 2

3

3

33C

3C

5C

5C

5C

9C

Page 17: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed.

Transient Response Using RC Model

For first order RC, the step response:

-

3: CMOS Transistor Theory 17

Page 18: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed.

Transient Response Using RC Model

For first order RC, the step response:

The above solution is complex. Elmore model offers a

mechanism to simplify the RC network.

3: CMOS Transistor Theory 18

Page 19: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 19

Elmore Delay

ON transistors look like resistors

Pullup or pulldown network modeled as RC ladder

Elmore delay of RC ladder

R1

R2

R3

RN

C1

C2

C3

CN

nodes

1 1 1 2 2 1 2... ...

pd i to source i

i

N N

t R C

R C R R C R R R C

Page 20: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed.

Example: INV

3: CMOS Transistor Theory 20

m

m

Page 21: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 21

Example: 3-input NAND

Estimate worst-case rising and falling delay of 3-input NAND

driving h identical gates.

9C

3C

3C3

3

3

222

5hC

Y

n2

n1h copies

9 5pdrt h RC

3 3 3 3 3 33 3 9 5

12 5

R R R R R Rpdft C C h C

h RC

Page 22: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 22

Delay Components

Delay has two parts

– Parasitic delay

• 9 or 12 RC

• Independent of load

– Effort delay

• 5h RC

• Proportional to load capacitance

Page 23: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 23

Contamination Delay

Best-case (contamination) delay can be substantially less than

propagation delay.

Ex: If all three inputs fall simultaneously

5

9 5 33 3

cdr

Rt h C h RC

9C

3C

3C3

3

3

222

5hC

Y

n2

n1

Page 24: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 5: DC and Transient Response 24

7C

3C

3C3

3

3

222

3C

2C2C

3C3C

Isolated

Contacted

DiffusionMerged

Uncontacted

Diffusion

Shared

Contacted

Diffusion

Diffusion Capacitance

We assumed contacted diffusion on every s / d.

Good layout minimizes diffusion area

Ex: NAND3 layout shares one diffusion contact

– Reduces output capacitance by 2C

– Merged uncontacted diffusion might help too

Page 25: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed.

Linear Delay

Model and

Logical Effort

Page 26: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 26

Outline

Logical Effort

Delay in a Logic Gate

Multistage Logic Networks

Choosing the Best Number of Stages

Example

Summary

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 27

Introduction

Chip designers face a bewildering array of choices

– What is the best circuit topology for a function?

– How many stages of logic give least delay?

– How wide should the transistors be?

Logical effort is a method to make these decisions

– Uses a simple model of delay

– Allows rough and quick calculations

– Helps make rapid comparisons between alternatives

– Emphasizes remarkable symmetries

? ? ?

Page 28: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 28

Delay in a Logic Gate

Express delays in process-independent unit

Delay has two components: d = f + p

f: effort delay = gh (a.k.a. stage effort)

– Again has two components

g: logical effort

– Measures relative ability of gate to deliver current

– g 1 for inverter

h: electrical effort = Cout / Cin

– Ratio of output to input capacitance

– Sometimes called fanout

p: parasitic delay

– Represents delay of gate driving no load

– Set by internal parasitic capacitance

absdd

3RC

3 ps in 65 nm process

60 ps in 0.6 mm process

Page 29: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 29

Electrical Effort:

h = Cout / Cin

No

rma

lize

d D

ela

y: d

Inverter2-input

NAND

g = 1

p = 1

d = h + 1

g = 4/3

p = 2

d = (4/3)h + 2

Effort Delay: f

Parasitic Delay: p

0 1 2 3 4 5

0

1

2

3

4

5

6

Delay Plots: Inv , NAND

d = f + p

= gh + p

Page 30: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 30

Computing Logical Effort

DEF: Logical effort is the ratio of the input

capacitance of a gate to the input capacitance of an

inverter delivering the same output current.

Measure from delay vs. fanout plots

Or estimate by counting transistor widths

A YA

B

YA

BY

1

2

1 1

2 2

2

2

4

4

Cin = 3

g = 3/3

Cin = 4

g = 4/3

Cin = 5

g = 5/3

Page 31: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 31

Catalog of Gates

Gate type Number of inputs

1 2 3 4 n

Inverter 1

NAND 4/3 5/3 6/3 (n+2)/3

NOR 5/3 7/3 9/3 (2n+1)/3

Tristate / mux 2 2 2 2 2

XOR, XNOR 4, 4 6, 12, 6 8, 16, 16, 8

Logical effort of common gates

Not Our

Focus

Page 32: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 32

Catalog of Gates

Gate type Number of inputs

1 2 3 4 n

Inverter 1

NAND 2 3 4 n

NOR 2 3 4 n

Tristate / mux 2 4 6 8 2n

XOR, XNOR 4 6 8

Parasitic delay of common gates

– In multiples of pinv (1)

Page 33: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 33

Example: Ring Oscillator

Estimate the frequency of an N-stage ring oscillator

Logical Effort: g = 1

Electrical Effort: h = 1

Parasitic Delay: p = 1

Stage Delay: d = 2

Period T = 2*N*d

Frequency: fosc = 1/T = 1/(4N* )

Assuming that =3ps , N=31 fosc = 2.7 GHz

Notice how

delay calculations

are process

independent

Page 34: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 34

Example: FO4 Inverter

Estimate the delay of a fanout-of-4 (FO4) inverter

Logical Effort: g = 1

Electrical Effort: h = 4

Parasitic Delay: p = 1

Stage Delay: d = 5

In 65n process , =3ps delay = d* =15 ps

In 0.6 mm process =60ps delay = d* =300 ps

d

Notice how

delay calculations

are process

independent

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 35

Logical Effort For Multi-Stage Paths

Logical effort generalizes to multistage networks

Path Logical Effort

Path Electrical Effort

Path Effort

iG g

out-path

in-path

CH

C

i i iF f g h

10x

y z20

g1 = 1h

1 = x/10

g2 = 5/3h

2 = y/x

g3 = 4/3h

3 = z/y

g4 = 1h

4 = 20/z

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 36

Branching Effort

Introduce branching effort

– Accounts for branching between stages in path

Now we compute the path effort

– F = GBH

on path off path

on path

C Cb

C

iB b ih BH

Note:

5

15

1590

90

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 37

Multistage Delays

Path Effort Delay

Path Parasitic Delay

Path Delay

F iD f

iP p

i FD d D P

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 38

Designing Fast Circuits

Delay is smallest when each stage bears same effort

Thus minimum delay of N stage path is

This is a key result of logical effort

– Find fastest possible delay

– Doesn’t require calculating gate sizes

i FD d D P

1ˆ N

i if g h F

1ND NF P

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 39

Gate Sizes

How wide should the gates be for least delay?

Working backward, apply capacitance

transformation to find input capacitance of each gate

given load it drives.

Check work by verifying input cap spec is met.

ˆ

ˆ

out

in

i

i

C

C

i out

in

f gh g

g CC

f

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 40

Path Example

N=4

H=2

G= 20/9

B=1

F=HGB=40/9

10x

y z20

g1 = 1h

1 = x/10

g2 = 5/3h

2 = y/x

g3 = 4/3h

3 = z/y

g4 = 1h

4 = 20/z

f=(F)1/N=1.45

X=14.52

Y=12.64

Z=13.77

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 41

Example with Branches

No! Consider paths that branch:

G = 1

H = 90 / 5 = 18

GH = 18

h1 = (15 +15) / 5 = 6

h2 = 90 / 15 = 6

F = g1g2h1h2 = 36 = 2GH

OR

B=2 F=GBH= 2(1)(18)=36

5

15

1590

90

Page 42: Transient Response: Delay Modelsjufiles.com/wp-content/uploads/2016/12/5_MOS-Transient.pdf · CMOS VLSI DesignCMOS VLSI Design 4th Ed. Transient Response: Delay Models Dr. Bassam

CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 42

Example: 3-stage path

Select gate sizes x and y for least delay from A to B

8x

x

x

y

y

45

45

A

B

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 43

Example: 3-stage path

Logical Effort G = (4/3)*(5/3)*(5/3) = 100/27

Electrical Effort H = 45/8

Branching Effort B = 3 * 2 = 6

Path Effort F = GBH = 125

Best Stage Effort

Parasitic Delay P = 2 + 3 + 2 = 7

Delay D = 3*5 + 7 = 22 = 4.4 FO4

8x

x

x

y

y

45

45

A

B

3ˆ 5f F

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 44

Example: 3-stage path

Work backward for sizes

y = 45 * (5/3) / 5 = 15

x = (15*2) * (5/3) / 5 = 10

P: 4

N: 4

45

45

A

BP: 4

N: 6P: 12

N: 3

8x

x

x

y

y

45

45

A

B

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 45

Best Number of Stages

How many stages should a path use?

– Minimizing number of stages is not always fastest

Example: drive 64-bit datapath with unit inverter

D = NF1/N + P

= N(64)1/N + N

1 1 1 1

8 4

16 8

2.8

23

64 64 64 64

Initial Driver

Datapath Load

N:

f:

D:

1

64

65

2

8

18

3

4

15

4

2.8

15.3

Fastest

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 46

Best Number of Stages

Consider adding inverters to end of path

– How many give least delay?

Define best stage effort

N - n1 Extra Inverters

Logic Block:

n1 Stages

Path Effort F 11

1

1

N

n

i inv

i

D NF p N n p

1 1 1

ln 0N N N

inv

DF F F p

N

1 ln 0invp

1NF

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 47

Best Stage Effort

has no closed-form solution

Neglecting parasitics (pinv = 0), we find = 2.718 (e)

For pinv = 1, solve numerically for = 3.59

1 ln 0invp

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 48

Sensitivity Analysis

How sensitive is delay to using exactly the best number of stages?

2.4 < < 6 gives delay within 15% of optimal

– We can be sloppy!

– I like = 4

1.0

1.2

1.4

1.6

1.0 2.00.5 1.40.7

N / N

1.15

1.26

1.51

( =2.4)(=6)

D(N

) /

D(N

)0.0

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 49

Example, Revisited

Ben Bitdiddle is the memory designer for the Motoroil 68W86, an embedded automotive processor. Help Ben design the decoder for a register file.

Decoder specifications:

– 16 word register file

– Each word is 32 bits wide

– Each bit presents load of 3 unit-sized transistors

– True and complementary address inputs A[3:0]

– Each input may drive 10 unit-sized transistors

Ben needs to decide:

– How many stages to use?

– How large should each gate be?

– How fast can decoder operate?

A[3:0] A[3:0]

16

32 bits

16 w

ord

s

4:1

6 D

eco

de

r

Register File

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 50

Number of Stages

Decoder effort is mainly electrical and branching

Electrical Effort: H = (32*3) / 10 = 9.6

Branching Effort: B = 8

If we neglect logical effort (assume G = 1)

Path Effort: F = GBH = 76.8

Number of Stages: N = log4F = 3.1

Try a 3-stage design

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 51

Gate Sizes & Delay

Logical Effort: G = 1 * 6/3 * 1 = 2

Path Effort: F = GBH = 154

Stage Effort:

Path Delay:

Gate sizes: z = 96*1/5.36 = 18 y = 18*2/5.36 = 6.7 A[3] A[3] A[2] A[2] A[1] A[1] A[0] A[0]

word[0]

word[15]

96 units of wordline capacitance

10 10 10 10 10 10 10 10

y z

y z

1/3ˆ 5.36f F ˆ3 1 4 1 22.1D f

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 52

Comparison

Compare many alternatives with a spreadsheet

D = N(76.8 G)1/N + P

Design N G P D

NOR4 1 3 4 234

NAND4-INV 2 2 5 29.8

NAND2-NOR2 2 20/9 4 30.1

INV-NAND4-INV 3 2 6 22.1

NAND4-INV-INV-INV 4 2 7 21.1

NAND2-NOR2-INV-INV 4 20/9 6 20.5

NAND2-INV-NAND2-INV 4 16/9 6 19.7

INV-NAND2-INV-NAND2-INV 5 16/9 7 20.4

NAND2-INV-NAND2-INV-INV-INV 6 16/9 8 21.6

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 53

Review of Definitions

Term Stage Path

number of stages

logical effort

electrical effort

branching effort

effort

effort delay

parasitic delay

delay

iG g out-path

in-path

C

CH

N

iB b F GBH

F iD f

iP p i FD d D P

out

in

C

Ch

on-path off-path

on-path

C C

Cb

f gh

f

p

d f p

g

1

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 54

Method of Logical Effort

1) Compute path effort

2) Estimate best number of stages

3) Sketch path with N stages

4) Estimate least delay

5) Determine best stage effort

6) Find gate sizes

F GBH

4logN F

1ND NF P

1ˆ Nf F

ˆi

i

i out

in

g CC

f

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CMOS VLSI Design CMOS VLSI Design 4th Ed. 6: Logical Effort 55

Limits of Logical Effort

Chicken and egg problem

– Need path to compute G

– But don’t know number of stages without G

Simplistic delay model

– Neglects input rise time effects

Interconnect

– Iteration required in designs with wire

Maximum speed only

– Not minimum area/power for constrained delay