University of Padova, Dept. of Information Engineering

2017 Summer School of Information Engineering,

Technologies for Energy Sustainability

Casa della Gioventù via Rio Bianco

39042 Bressanone (BZ), Italy July 2 – 8, 2017

the co-Directors prof. Gaudenzio Meneghesso, gauss@dei.unipd.it prof. Michele Rossi, rossi@dei.unipd.it

Summer School description This"SummerSchool"isdedicatedtothestudyandanalysisofthetechnologiesofthe"InformationandCommunicationTechnology,ICT"appliedwithintheEnergysavings,bothfromatechnologicalpointofview(innovativemicroelectronicdevices)andfromthepointofviewofcommunicationnetworks. In particular, this summer school was conceived and structured as a disseminationvehiclefortwoEuropeanprojects:

• ProjectInRel-NPower(http://www.inrel-npower.eu/),whichseesProf.G.MeneghessoasProjectCoordinator,whichhasasitsobjectivethedevelopmentofnewelectronicdevicesandsystemstoreduceenergylossesfromenergyconversions.

• Project SCAVENGE (http://www.scavenge.eu/), which sees the prof. Michele Rossi asPrimeInvestigator,whichhasasitsobjectivethedesignofarchitecturesandalgorithmsforcellularnetworks5Gnewgenerationthatareefficientandabletoharnesstheenergythatcanbederivedfromtheexternalenvironment.

InRel-NPowerEfficientpowerconversionsystemsareattheheartoftheworldwideeffortforagreeneconomy,sincetheycanminimizelossesandsaveenergy.Semiconductorpowerdevicesareacentralpartofanypowerconversioncircuitandareubiquitousinourdailylives:theytransformvoltagesforamultitudeofappliances,suchasfromthe220VACmainstoa12VDCend-userapplianceandenabletoconvertfromDC(suchasabatteryinanelectriccar)toAC(suchasamotordrive)andviceversa.Highlyefficientpowerswitchingdevicesareakeyforsuccessfulintroductionoffullelectricvehiclesintothemarket.TheInRel-NPowerprojectaimstocontributetothisworld-widechallengethroughthedevelopmentofGaN-andAlN-basedpowerdevices.SCAVENGEThefifthgeneration5Gofmobiletechnologywillsupport1,000timesmorecapacityperunitareathan4G,formorethan100billiondeviceswithtypicaluserratesof10Gb/s,andsignificantlylowerlatencyandhigherreliability.Thehighercapacitydemandinghuman-centriccommunicationswillbecomplementedbyanenormousincreaseinthenumberofcommunicatingmachines.However,thisenormousgrowthinthenumberofdevicesandaccesspointswillalsoleadtoanequallylargegrowth in the carbon footprint of the information and communication technologies (ICTs).Connecting thisdensenetworkofBSs to the energygrid, and regularly rechargingdrainedenddevicebatteriesisphysicallyimpractical,ifnotimpossible.SCAVENGEtacklessustainabledesign,protocols, architectures and algorithms for next generation 5G cellular networks. Our overallpurpose is toallowmobilesystemsandespecially theirconstitutingbasestations, femto,small-cells,mobiledevicesandsensorstotakeadvantageofsourcesharvestingambientenergy(suchasrenewablesources). Inthefollowingpage,wereporttheprogramoftheschool,whichfeaturesclassesandseminarsfrom experts in smart energy grids, energy conversion devices, renewable sources andtelecommunication networks. Most of our speakers are international experts and the school isconceivedtobeaccessibletoawideaudienceofengineersandstudentsfromdiversefields.Ourfinalaimistoeducatethestudentsthatwillbeinvolvedaroundthetopicsof:1)energyconversion,2)energyharvestingand3)theirapplication.Besides the talks, twoworkgroupswillbeoffered toallowthe interactionamongstudents, theworkgroupswillbesupervisedbyourexperts,tousetheallottedtimeproductively.Theschoolwillfeaturetheparticipationofnumerousinternationalinstitutesandcompanies.ThiswillprovideauniqueopportunitytoourPhDstudentsandyoungresearcherstogetinternationalexposure,strengtheningconnectionswithpartnersdevelopingcuttingedgeresearch&technologyandenhancingtheirskillsintermsofnetworking,projectconceptionandwriting.

University of Padova, Dept. of Information Engineering 2017 Summer School of Information Engineering,

Bressanone (Brixen, BZ), Italy - July 2 – 8, 2017 Technologies for Energy Sustainability

Monday3/7 (CasadellaGioventù)8:45–9:00 GaudenzioMeneghesso,MicheleRossi Department of Information Engineering,

University of Padova: “Summer School introduction, program description,introductiontoInRel-NPowerandSCAVENGE”

9:00–11:00 Plenary Florent Cadoux, Fondation Partenariale de Grenoble INP / laboratoireG2Elab,“DistributedControlofSmartPowerGrids:anIndustrialViewpoint”(video)

11:00–13:00 Plenary Florent Cadoux, Fondation Partenariale de Grenoble INP / laboratoireG2Elab,“DistributedControlofSmartPowerGrids:SelectedProblems”(video)

14:00–16:30 PlenaryPeterMoens,OnSemiconductor,Belgium“GeneralOverviewofGaNbasedPowerDevices”(video)

Tuesday4/7: (CasadellaGioventù)9:00–12:30 Paolo Dini, Lorenza Giupponi, Centre Tecnològic de Telecomunicacions de

Catalunya (CTTC), Spain,Network “EnergySustainableArchitectureandMethodsforFutureMobileCommunicationNetworks”

14:00–15:00 J. Derluyn, EpiGaN, Belgium, Technology “Materials and Epigrowths for widebandgapsemiconductorsdevices”(video)

15:00–16:00 E. Meissner, Fraunhofer IISB, Germany, Technology “Defects in NitrideSemiconductorsMaterialsandtheirrelevancetoelectronicdevices”(video)

16:15–17:30 F. Medjdoub, CNRS-IEMN Lille, France; Technology “Device processing andarchitecturesinGalliumNitridebasedsemiconductors”(video)

Wednesday5/7:(CasadellaGioventù/(*)GrünerBaumHotel)9:00–10:30 M. Meneghini, Department of Information Engineering, University of Padova;

Technology“ReliabilityofGaN-powertransistors:anoverview”(video)11:00–12:30 M.Rittner,RobertBoschGmbH,Germany;Technology“ModernhighPerformance

Assembly and Interconnection Technologies for WBG Power Semic. PowerElectronics”(video)

10:00–11:00 (*)PaoloTenti,Dept.ofInformationEngineering,Univ.ofPadova;Network“FromMicro-GridtoEnergyLANtoInternetofEnergy:apathwaytoelectricrevolution–PartI”

11:30–12:30 (*)PaoloTenti,DeptofInformationEngineering,Univ.ofPadova;Network“FromMicro-GridtoEnergyLANtoInternetofEnergy:apathwaytoelectricrevolution–PartII”

14:00–15:30 Fabio Aiolli, Department of Mathematics, University of Padova; Network“RepresentationandKernelLearning–PartI”(video)

16:00–17:30 Fabio Aiolli, Department of Mathematics, University of Padova; Network“RepresentationandKernelLearning–PartII”(video)

19:30–22:00 SocialDinner

Thursday6/7: (CasadellaGioventù)09:00–10:30 AndreaPasserini,Dept.ofInformationEngineeringandComputerScience,Univ.of

Trento;Network“InferenceandLearningwithBayesianNetworks–PartI”(video)11:00–12:30 AndreaPasserini,Dept.ofInformationEngineeringandComputerScience,Univ.of

Trento;Network“InferenceandLearningwithBayesianNetworks–PartII”(video)14:00–15:30 K. Kriegel, SIEMENS Germany; Technology “Industrial applications of wide

bandgapsemiconductorsdevices”(video)16:00–17:30 P. Bleus CE+T, Belgium; Technology “Applications in Energy saving of wide

bandgapsemiconductorsdevices”(video)

Friday7/7: (CasadellaGioventù)9:00–12:30 PlenaryAlbertoTestolin,DepartmentofGeneralPsychology,UniversityofPadova.

“Discoveringlatentstructurefrombigdatausingneuralnetworks”(video)

The school this year feature two different possible tracks, one related to the GaN Technologies, and one related to new 5G Generation. Below the schedule of the two tracks and the full program. Nevertheless the students can follow any session.

Monday Tuesday Wednesday Thursday Friday

July3 July4 July5 July6 July7

9:0012:30

Plenary:DistributedControlofSmartPowerGrids

EnergySustainableArchitecturesandMethodsforFuture

MobileCommunication

Networks

ReliabilityofGaN-

powertransistors,

Modernhigh

Performance

Assemblyand

Interconnection

Technologies

FromMicro-Gridto

EnergyLANto

InternetofEnergy:

apathwayto

electricrevolution

InferenceandLearningwith

BayesianNetworks

Discoveringlatentstructurefrombigdatausingneural

networks

12:3014:00

14:0017:30

Plenary:GeneralOverviewofGaNbasedPower

Devices

MaterialsandEpigrowths,DefectsinNitrideSemiconductorsDeviceprocessing

RepresentationandKernelLearning

Industrialapplicationsofwidebandgapsemiconductorsdevices

SSIE2017TechnologiesforEnergySustainability-FULLPROGRAM

LunchBreak

July3 July4 July5 July6 July7

9:0012:30

Plenary:DistributedControlofSmartPowerGrids

ReliabilityofGaN-powertransistors,ModernhighPerformanceAssemblyandInterconnectionTechnologies

StudentsPresentations

Discoveringlatentstructurefrombigdatausingneural

networks

12:3014:00

14:0017:30

Plenary:GeneralOverviewofGaNbasedPower

Devices

MaterialsandEpigrowths,DefectsinNitrideSemiconductorsDeviceprocessing

Industrialapplicationsofwidebandgapsemiconductorsdevices

LunchBreak

SSIE2017TechnologiesforEnergySustainability-GaNTechnologies

Monday Tuesday Wednesday Thursday Friday

July3 July4 July5 July6 July7

9:0012:30

Plenary:DistributedControlofSmart

PowerGrids

EnergySustainable

Architecturesand

MethodsforFuture

Mobile

Communication

Networks

FromMicro-Gridto

EnergyLANto

InternetofEnergy:

apathwayto

electricrevolution

Inferenceand

Learningwith

BayesianNetworks

Discoveringlatent

structurefrombig

datausingneural

networks

12:3014:00

14:0017:30

Plenary:GeneralOverviewofGaN

basedPower

Devices

Representationand

KernelLearning

SSIE2017TechnologiesforEnergySustainability-Newgeneration5G

LunchBreak

ABSTRACTS & Bios FlorentCadoux,FondationPartenarialedeGrenobleINP/laboratoireG2Elab“DistributedControlofSmartPowerGrids:AnIndustrialViewpoint”Abstract:Thecoursewill startwithsomebasicsaboutoptimization ingeneral, fromthe theoreticalviewpoint(mathematicalnotions,etc)aswellasfromthepracticalviewpoint(modelling languages,solvers,etc).Wewillthenreviewsomeoftheclassicalapplicationsofoptimizationinthepowerindustrytoday.Thenwewillturntomoreprospectiveapplicationsofoptimizationtofuture"smartgrids"FlorentCadouxstudiedatEcolePolytechnique(France)andholdsaPhDinAppliedMathematicsandOptimizationfromINRIA(2009),whereheworkedonnumericaloptimizationandconvexanalysiswithvariousapplicationstocombinatorialoptimization,computationalmechanics,andcomputergraphics.Hehasalsobeenaconsultantinoptimization at Artelys, where heworked on various applications of optimization to the electric industry. Hecurrentlyholdsthe“EnedisindustrialchaironSmartgrids”atFondationGrenoble-INP/G2Elab(GrenobleElectricalEngineeringLaboratory).PeterMoens,ONSemiconductors,Belgium“GeneralOverviewofGaNbasedPowerDevices”Abstract: this course will provide an introduction to GaN based power devices. The following topics will beaddressed (each topic including state-of-theart literature review): 1)Whyanewgenerationofmoreefficientpower devices is needed ? 2) Derive the Baliga Figure of Merit for power devices (student exercise) andinterpretationoftheresult.Challengetheassumptionswhichareusedtoderivetheequation.3)Briefoverviewofthemainmaterialsforpowerdevices(Si,SiC,GaN,AlN,Ga2O3anddiamond);4)BasicmaterialpropertiesofGaN;5)Polarversusnon-polarmaterials.6)Conceptofpolarizationcharge;7)Ternaryandquaternaryalloys;8)Differentdevicearchitectures:HighElectronMobilityTransistors(“HEMT”)versusstandardjunctiontransistors:impactofdeviceconceptonon-resistanceandcapacitance(makelinktotheBaligafigure-of-merit);9)Depletionmode and enhancementmode devices. Basic band structure; 10) Lateral and vertical GaN-based devices; 11)DynamicRon,andhowtocharacterize;12)Applicationtestingresults.PeterMoensreceivedaM.Sc.andaPh.D.insolidstatephysicsfromtheUniversityofGent,Belgium,in1990and1993respectively.From1993till1996,heworkedasapost-doctoralfellowincollaborationwithAgfa-Gevaert,Mortsel Belgium. In 1996, he joined ON Semiconductor, Oudenaarde, Belgiumwhere hewas involved in thetechnologyanddevicedevelopmentforsmartpowerapplications,andtherelatedreliabilityaspects.Since2008heisresponsibleforthedevelopmentof600+Vdiscretepowerdevices,bothinsiliconaswellasinwidebandgapmaterials.He is/wasamemberof the technicalprogramcommitteesof IEDM, ISPSD, IRPS, IRW,ESSDERCandESDEOSSymposium.HewasVice-chairoftheintegratedpowersubcommitteeofIRPS2005and2008,andChairofthesamecommitteeofIRPS2006andIRPS2007.HewastheTechnicalprogramchairofISPSD2009,andtheGeneralchairofISPSD2012.HewasthesubcommitteechairofthePowerandCompoundsemiconductordevicessubcommitteeforIEDM2014.Heauthoredandco-authoredover150publicationsinpeerreviewedjournalsorconferences,ofwhichover60asfirstauthor.Heauthoredorco-authoredof12invitedpapersandistherecipientof3bestpaperawards.HealsopresentedtutorialsonsmartpowerreliabilityatIRPS2005,IRPS2006andISPSD2007,andonGaNpowerdevicereliabilityatIRPS2015.Heholdsover25patents.PaoloDini,CentreTecnològicdeTelecomunicacionsdeCatalunya(CTTC),Spain,“EnergySustainableArchitectureandMethodsforFutureMobileCommunicationNetworks”Abstract:Wearenowlivingthedigitalera.Dematerializationisbecomingareality,andeverybodyandeverything,includingmachines,isgloballyconnectedthroughtheInternet.Thetrendisofafurtherincreaseintrafficdemand,numberofofferedservicesandconnecteddevices,especiallymobile.However,themassiveuseofInformationandCommunicationTechnologies (ICT) is also increasing the levelofenergy consumedby that systemand itsfootprintontheenvironment. In2030ICTisexpectedtoconsume51%oftheelectricitygeneratedandwillberesponsibleof23%ofthecarbonfootprintbyhumanactivity.SustainabledesignofICT,andspeciallyofmobilenetworks,is,therefore,akeyandchallengingsectorforsocietalprosperity.Inthistalk,wewillelaborateonthearchitectureofthefuturemobilenetworks,oftenreferredtoas5G(5thGeneration),anditsinteractionwiththeelectricitygrid.Theintegrationoftheradioaccessnetworkwithadistributedrenewableenergysystemwillbediscussed,byreportingthemainbuildingblocksandmethodstoachievetheself-sustainabilityoftheintegratedsystem.PaoloDini(MSc2001,PhD2005)isaSeniorResearcherattheCommunicationNetworksdivisionoftheCentreTecnologicdeTelecomunicacionsdeCatalunya(CTTC).FormerlyheworkedasaresearchassistantintheComputerScienceandSystems(DIS)andInformationandCommunication(INFOCOM)departmentsoftheUniversitàdiRoma“LaSapienza”(2001-2005).In2005,heworkedwiththeResearchCenteronSoftwareTechnologies(RCOST)asaresearchassistant. Inthesameyear,hewasalsoanassistantprofessorat INFOCOMdepartment lecturingthecourseof“ComunicazioniElettriche”.In2008and2011hereceivedtwograntsfromtheCiscoResearchCentre(SanJosé,US)forhisresearchonheterogeneousmobilenetworks.PaolohasanactiveparticipationinresearchprojectsandheiscurrentlythecoordinatoroftheSCAVENGEEuropeanTrainingNetworkonenergyharvesting

cellular networks. He published more than 50 papers in scientific journals, magazines and internationalconferences and serves many IEEE conferences and journals as a technical reviewer. His research interestsencompasswirelessnetworksmodellingandoptimization,withparticularemphasisonenergysavingandenergyefficiency, energy sustainable network architectures, protocols and algorithms, smart grids, self-organizingnetworks,cognitivenetworkingandmachinelearning,radioresourceandmobilitymanagement.JoffDerluyn, EpiGaN,Belgium, “MaterialsandEpigrowthsforwidebandgapsemiconductorsdevices” Abstract:This1hcoursewillprovidean introductiontomaterialaspectsofGaNand itsepitaxy.The followingtopicswillbeaddressed:1)III-Vsemiconductoroverview(bandgapvs.latticeconstant),2)Deviceexamples(buildanLED);3)Polarityincrystals,4)QCSE;5)Derive2DEGfrompolarizationcharges;6)HEMT/Surfacepassivation;7)Epitaxialgrowth;8)MOCVDandothertechniques;9)Basicconcepts(Boundarylayermodel,thermodynamics);10:Materialcharacterisationtechniques;11)Mismatch;12)GaNhetero-epitaxy,esp.GaNonSi;13)Nucleation;14)Bufferconcepts.JoffDerluynisaco-founderandtheCTOofEpiGaN(www.epigan.com).Inthatcapacity,heisresponsiblefortheR&Droadmap,IPstrategyandmainresponsibleforbilateralandpublicfundedprojects(ESA,EU-FP7,EU-H2020,EU-ECSEL). Joff has over 20 years of experience in MOCVD epitaxy and device processing of III-N and III-Vsemiconductormaterialsanddevices,holdsover25grantedpatentsinthefieldofIII-Nelectronicsandisauthororco-authorofover100peer-reviewedpublications.Heactsasreviewerforhighimpactscientificjournalssuchas APL, EDL and TED and is a member of NEREID expert committee to set up a roadmap for wide bandgapsemiconductors. Prior to founding EpiGaN, Joff was at imec as the responsible for the GaN devices andcharacterization team.HeholdsaPhD inelectricalengineering fromGhentuniversityon the topicofepitaxialgrowthofdilutenitrides.ElkeMesissner,FraunhoferInstituteforIntegratedSystemsandDeviceTechnology,Germany“DefectsinNitridesemiconductorsmaterialsandtheirrelevancetoelectronicdevices”Abstract: This short lecture will provide information with regard to the defect microstructure of nitridesemiconductorsandtheimplicationfortheelectricalperformanceofthosematerials.Thefollowingtopicswillbecovered:1)Shortintroductiontothetechnologyofnitridesemiconductorcrystalgrowth,2)Therealstructureofsemiconductor crystals, 3) Problems associated to hetero-epitaxy, especially resulting extended defects, 4)Propertiesofdislocations,5)Whyaredislocationsrelevanttoanelectronicdevice?,6)Whywewouldneednativenitridesubstrates.ElkeMeissnerisaseniorscientistattheDepartmentMaterialsoftheFraunhoferInstituteofIntegratedSystemsand Device Technology (IISB) in Erlangen, Germany and head of the Nitrides group which operates at threelocations. Besides the IISB shemanagesGaNactivities at the Frauhofer TechnologyCenter for SemiconductorMaterials(THM)atFreiberg(Saxony,Germany)andtheTechnicalFacultyofUniversityofErlangen-NurembergatthechairforElectronDevices,whereshealsoholdsalectureship.ShereceivedherPhDfromtheUniversityofBayreuth,Germanyin2000.AftersometimespentattheGermanAerospaceResearchCentre,shemovedtootherresearchinstitutionsanduniversitiestofurtherworkwithcrystallinematter.Elkenowoffersabroadbackgroundinprocess-properties-correlationofadvancedmaterialsfrommorethan20yearsofexperienceinvariousfieldsranging from applied & experimental mineralogy, Si3N4 and related processes under high pressure andtemperatureaswellasthecrystalgrowthofGaNanAlN.Herrecentworkisstronglyfocusedonthestructuralcharacterizationof crystalsandcrystal layersofnovel semiconductormaterialsand the influenceof structuraldisturbancesonelectricalreliability,especiallyofelectrondevicesbasedonnitrides.Sheisinventororco-inventorofinternationalpatentsandauthoredorco-authorednumerousscientificpublications,contributionstojournalsandconference,hasbeenchairorco-chairofinternationalconferences,reviewerofmanyrecommendedscientificjournalsand ismemberofthe internationalsteeringcommitteeofthe InternationalWorkshoponBulkNitrideSemiconductors(IWBNS). FaridMedjdoub,CNRS-IEMNLille,France“DeviceprocessingandarchitecturesinGalliumNitridebasedsemiconductors”Abstract:Group-III nitride, galliumnitride (GaN) is apromisingwide-bandgap semiconductor.GaN-basedHighElectronMobilityTransistorswereoriginallydevelopedforhigh-powerhigh-frequencyamplifiers,however,inthelastdecaderesearchanddedicateddevelopmenteffortswerecarriedoutonAlGaN/GaNHEMTsgrownonlargediametersiliconsubstratesproducingcost-effectivehigh-efficiencypowerswitchingdevices,whichcommercialcompanieshavestartedtomassproduce.Theyhaveagreatimpactonconsumerelectronics,permittingadvancedpowerelectronicsduetotheirexcellentperformancesuchaslowon-resistanceandhighswitchingspeed.Inthislecture, an in-depth description of the device processing and architectures in Gallium Nitride basedsemiconductorswillbegiven.FaridMedjdoubisaCNRSseniorscientistandheadofthewidebandgapactivitiesatIEMNinFrancesince2011.HereceivedhisPh.D.inElectricalengineeringfromtheUniversityofLillein2004.Then,hemovedtotheUniversityofUlminGermanyasresearchassociatebeforejoiningIMECasaseniorscientistin2008.Multiplestate-of-the-artresultshavebeenrealizedintheframeofhiswork.Amongothers,worldrecordthermalstabilityupto1000°Cfor a field effect transistor, best cut-off frequency / breakdown voltage or highest lateral GaN-on-silicon

breakdownvoltageusingalocalsubstrateremovalhavebeenachieved.Hisresearchinterestsarethedesign,thefabrication,andcharacterizationofinnovativeGaN-baseddevices.Heisauthorandco-authorofmorethan100papersinthisfield.Heholdsseveralpatentsderivingfromhisresearch.HeservesasareviewerforIEEEjournalsandisaTPCmemberinseveralconferences.HeisalsopartoftheFrenchobservatoryofwidebandgapdevices.M.Meneghini, DepartmentofInformationEngineering,UniversityofPadova, “ReliabilityofGaN-powertransistors:anoverview”Abstract: The past few years have been exciting and extremely productive for the GaN community, and theresearchinthefieldofGaN-powerdeviceshasshownimpressiveadvancements.InlateralGaNHEMTs,atwo-dimensionalelectrongas(2DEG)isformedattheinterfacebetweenGaNandAlGaN;thehighmobilityofthe2DEG(inexcessof2000cm2/Vs)resultsincurrentdensitiesaround1A/mm,andinaverylowonresistance(25mΩfora650V/60Adevice).Thisimpliesasignificantreductionintheresistiveandswitchinglosses,comparedtosilicondevices, and this has a positive impact on the efficiency of GaN-based power converters (kW-range powerconverterswithefficiencyhigherthan99%havealreadybeendemonstrated,basedonGaNHEMTs).Arelevantaspectthat iscurrentlyunderstudyisthereliabilityofGaN-basedtransistors. Infact,duringoperationinhigh-voltagepowerconverters,theHEMTsmaybesubjecttoextremefieldandcurrentlevelsthatmayfavordevicedegradation.Inreal-lifeapplications,severalpotentiallyharmfulconditionsmaybereached,favoringtheexposuretooff-statebias,semi-onstressconditions,hardswitching,andhighgatebias.Thispresentationreviewsthemostrecent resultspublished in the fieldofGaN-basedpower transistors.Afterabrief introduction,wediscuss thelatesttechnologydevelopmentsthathaveanimpactondevicereliability.Then,wesummarizethemostimportantissues related to thedegradationofGaN-basedHEMTs submitted to stress regimes (off-state, hard switching,positivegatebias,hightemperature,...).MatteoMeneghini received his PhD in Electronic and Telecommunication Engineering (University of Padova),working on the optimization of GaN-based LED and laser structures. He is now assistant professor at theDepartment of Information Engineering at theUniversity of Padova. Hismain interest is the characterization,reliabilityandsimulationofcompoundsemiconductordevices(LEDs,Laserdiodes,HEMTs).Withintheseactivities,hehaspublishedmorethan300journalandconferenceproceedingspapers.Duringhisactivity,hehascooperatedand/or co-published with a number of semiconductor companies and research centers including: -OSRAM-OptoSemiconductor(Germany),-PanasonicCorporation(Japan),UniversalDisplayCorporation(USA),-NXP(TheNetherlands), -ON Semiconductors (Belgium/USA), -Sensor Electronic Technologies (USA), -IMEC (Belgium), -Infineon (Austria), -Fraunhofer IAF (Germany), -University of Cambridge (UK), -Universiy of California at SantaBarbara(USA),-UniversityofWien(Austria).MeneghiniisaSeniorMemberofIEEEandamemberoftheSPIE.He–togetherwithhiscolleagues-wonseveralbestpaperawardsatinternationalconferences(includingESREF2009,IWN2012,ESREF2012,ESSDERC2013).Hehas/isparticipatedtothetechnicalcommitteeofseveralconferencesincludingIEEE-IEDM,IEEE-IRPS,ESREF,ESSDERC.M.Rittner, Robert Bosch GmbH | Renningen | 70465 Stuttgart | GERMANY, “Modern high Performance Assembly and Interconnection Technologies for Wide-Band-Gap PowerSemiconductorbasingPowerElectronics”Abstract:Theusageofwide-band-gap-basing(e.g. likeGaNpowersemiconductors)powerelectronics,offersahugepotentialforfurtherincreaseofconvertingefficiencies,higherpowerdensitiesandtheabilityofmechatronicintegrationinnearlyallapplicationsandaggregates.Butinparallelthereisadecisivedemandforhighperformanceassemblyandinterconnectiontechnologiesinthemeansofhightemperaturecapability,highpowercyclerobustness,lowinductivedesignelementsandintegrationabilityoffurtheractiveandpassivecomponents(capacitors,inductors,sensors,driver&controllerASICs)inthenearestambientofthepowerchip.ExclusivelywithnewassemblyandinterconnectiontechnologiesanddesignelementstheoutperformanceofthenewWBG-basingpowerelectronics’systems-incomparisontostateoftheartSi-basingpowerelectronics-willsucceed.Beginningwithanoverviewofmodernpowerelectronicssubstrateandcircuitcarriertechnologiesthemountingandcontactingofthepowersemiconductorsonthosewithrobusttechnologies,liketheso-calledSilver-sinteringanddiffusionsolderingtechnologyortheCu-bondingtechnology,willbedescribed.Furtheronnecessarypower stagedesignelements regarding fastandhardswitchingof thepowerswitcheswillbedescribed.Thefunctionalcharacteristicsofthecommutationcellneedsthecompletionbythe DC-link capacitor. Therefor a summary of usable capacitor technology and the boundaries regarding itsintegration in the commutation cell will be described. A lot of industrial branches need special robustnesscapabilitiesoftheirpowerelectronics’systems.Thesearetypicallylimitedbythechosenhardwaretechnologiesandtheinvolvedmaterials.Specificambientloadslikecertaintemperatures,vibration,chemicalsubstancesleadtoageinganddegradationofpowerelectronicshardware.Andthefunctionaluseitselfinducesageingconditionsaswell.Applyingtheon-currentandswitchingitoffleadstoaspecificloadontheassemblyandinterconnectiontechnologyandthemodule’smaterialstack.Asurveyonthepowerelectronics’robustnessissuewillbegiven.Dr. Martin Rittner is senior expert for power electronics assembly and interconnection technologies in theCorporateResearchunitofBosch.HestudiedPhysicsattheUniversityofStuttgartandreceivedhisdiplomainNuclear Physics in 1994. Afterwards he did his PhD thesis in the field of Semiconductor Physics at the sameuniversity.SinceworkingasresearchemployeeintheCorporateResearchsectorofBoschin2001heattendedseveralGermanandEUpublicfundedprojectsinthefieldofelectronicspackagingandassemblytechnologiesfor

automotiveandpowerelectronicsapplications.FortheGermanautomotivesupplierindustry,heiscurrentlytheheadoftheZVEI-ECPEworkinggroup‘HighTemperatureandPowerElectronics’.In2015,heroundedhisacademicskillsbyfinalizinghiseconomicstudiesandreceivingthedegreeasMasterofBusinessAdministrations(MBA).PaoloTenti,DepartmentofInformationEngineering,UniversityofPadova,Italy,“FromMicro-GridtoEnergyLANtoInternetofEnergy:apathwaytoelectricrevolution”Abstract: Owing to the increasing penetration of information and communication technologies and powerelectronics,low-voltagemicrogridswithdistributedgenerationwillprogressivelyevolvetoEnergyLANs(E-LANs),thatis,energynetworkswithdegreesofflexibility,reliability,robustness,andreadinesssimilartoLANsofdigitaldevices.Thiswillresultinafullandsynergisticexploitationofthecontrolpotentialofdistributedenergysources,driven by advanced grid supervisors targeting both microgrid performance and demand response at utilityterminals.Inaddition,prosumerswillgainthecapabilitytomanageandsharetheirenergyresourcestoimprovepowerqualityattheirpremises,saveenergyandmoney,andactasindividual,orevenaggregate,energytraders.Thisspeech introducesanoptimumcontrolapproachforE-LANsthatrelatestothegeneralcaseofpoly-phasemeshedgridswithdistributedenergysourcesandmultipleconnections to theutilities.Thanks toasynergisticcontrolofdistributedgrid-tiedpowerinverters,theproposedapproachassuresefficiency,scalability,plug-and-playintegrationofenergyresources,quickresponsetopowerdemands,andpreventsdiscontinuityofoperationincaseoffault.Inaddition,itmakespossibleprosumers’aggregationtoformcommunitiesofreal-timeenergytraders,thusmovingastepaheadtowardE-LANsandtothefutureInternetofEnergy.PaoloTentiisprofessorofElectronicsandPowerElectronicsattheDepartmentofInformationEngineeringoftheUniversity of Padova, Italy. His main research interests are in power electronics and industrial electronics.Currently,hisworkdealswithpowerquality,distributedcompensationtechniques,andsmartmicro-grids,withspecialemphasistooptimumcontrolofdistributedpowersources.HecoordinatedNationalresearchprogramsfunded by MIUR in 2003-2006, 2005-2008, 2007-2010, and currently serves as a member of National andInternationalevaluationpanels,includingEUERCandEurostarprograms.From1991to2001hewasamemberoftheExecutiveBoardoftheIEEEIndustryApplicationsSociety,andin1997heservedasIASPresident.From2001to2008hewasDirectoroftheDepartmentofInformationEngineeringoftheUniversityofPadova.From2003to2008 he served as Chairman of the Council of Department Directors of the sameUniversity. In 1999 hewaselevatedtotheIEEEFellowgrade,andin2000wasawardedtheIEEEMillenniumMedal. FabioAiolli,DepartmentofMathematics,UniversityofPadova,Italy,“RepresentationandKernelLearning”Abstract: The success ofmachine learning algorithmsheavily dependsondata representation. Even themostperformingclassificationalgorithmwillfailwhenprovidedwithabadinputrepresentationofdata.Inthistalk,theproblemofdata representation formachine learningwill be introduced. Inparticular,wewill focusonkernelmachines(e.g.supportvectormachinesforclassificationandregression),thetheorybehindthiskindofalgorithmsandwellfoundedmethodstolearntheimplicitrepresentationofkernelsfromdataFabioAiolli received a PhD in Computer Science in 2004 from theUniversity of Pisa. Hewas Post-doc at theComputer Science Dept., University of Pisa (ITALY), Visiting Scholar at the University of Illinois at Urbana-Champaign(IL),USA,andPost-docattheDept.ofPureandAppliedMathematics,UniversityofPadova(ITALY).Since2006heisAssistantProfessorattheDept.ofMathematics,UniversityofPadova(ITALY).HisresearchactivityisintheareaofMachineLearningandPatternRecognition.Inparticular,hehasexpertiseinkernelmethodsforstructured data, kernel and representation learning, hierarchical representations and deep learning, withapplicationstorecommendersystems,neuroscienceandbiologyAndreaPasserini,Dept.ofInformationEngineeringandComputerScience,Univ.ofTrento,“InferenceandLearningwithBayesianNetworks”Abstract: Bayesian Networks are a powerful tool to represent probabilistic relationshipsbetween randomvariables.IntheselecturesIwillintroducetheformalism,itsrepresentationalpowerandlimitations,discussexactandapproximateinferencetechniquesandpresentsolutionsforbothparameterandstructurelearning..AndreaPasserinigraduatedMagnaCumLaudeinComputerEngineeringattheUniversityofFlorencein2000andreceived his Ph.D. at the sameUniversity in 2004. He is currently Associate Professor at theDepartment ofInformationEngineeringandComputerScience(DISI)oftheUniversityofTrento.Hismainresearchinterestsareinmachinelearningtechniques,especiallylearningindomainswithcomplexstructures,relationsandconstraints.Herecentlygotinterestedin"constructivemachinelearning"problems,wherethegoalislearningtosynthesizenewentitieswiththedesiredcharacteristics.Heco-authoredoverninetyrefereedpapers.Hish-indexis20(GoogleScholar,April2017).K.Kriegel, SIEMENSGermany, “Industrialapplicationsofwidebandgapsemiconductorsdevices”Abstract:Thelecturestartswithanoverviewofcurrentsiliconpowerelectronicsdevicesandthepropertiesandexistingproblems.ThenewWBGmaterialssiliconcarbide(SiC)andGalliumnitride(GaN)andthepowerelectronicsdevicesfromthesematerialswillbeintroducedandtheirmainpropertiesarediscussed.Thenthelecturewillgiveawideoverviewofthedifferentapplicationfieldse.g.industrial,automotive,aerospaceandenergyconversion.

Thelectureisaswellonthespecialchallengesonpackagingforhightemperature,highpowerdensityandhighreliability.Dr.KaiKriegelreceivedadegreeinelectricalengineeringandadegreeinbusinessadministrationfromtheRWTHAachenUniversity.Hewasworkingat the Instituteof FerrousMetallurgyof theRWTHAachenUniversityandreceivedtheDr.-Ing.degreein2001.Since2001hehasbeenworkingatSiemensCorporateTechnologyinMunichasprojectmanagerondifferentR&Dprojectsinthefieldofpowerelectronicsanddrivetechnology,especiallyforautomotiveandaerospaceapplications.AlbertoTestolin,DepartmentofGeneralPsychology,UniversityofPadova.“Discoveringlatentstructurefrombigdatausingneuralnetworks”Abstract:Recent theoreticaland technicalprogress inartificialneuralnetworkshas significantlyexpanded therangeoftasksthatcanbesolvedbymachineintelligence.Inparticular,theadventofpowerfulparallelcomputingarchitecturesbasedongraphicprocessingunits,coupledwiththeavailabilityof“bigdata”,nowallowstocreateand train large-scale, hierarchical neural networks known as deep neural networks (LeCun, Bengio,&Hinton,2015).Thesepowerful learningsystemsachieve impressiveperformance inmanychallengingmachine learningtasks,suchasvisualobjectrecognition,speechprocessingandnaturallanguageunderstanding.In this seminar, I will review the main theoretical foundations of artificial neural networks, discussing bothsupervisedandunsupervisedformsofdeeplearning,andsequentialarchitecturesbasedonrecurrentnetworks.Iwillthenprovideexamplesandcasestudiesrelatedtoavarietyofcognitivetasks,aswellastheirapplicationsondifficultoptimizationproblems.Duringapractical,“hands-onsession”studentswillbeencouragedtotrainandanalyzetheirownmodelsonasimplepatternrecognitionproblem.AlbertoTestolinreceivedtheM.Sc.degreeincomputerscienceandthePh.D.degreeincognitivesciencefromtheUniversityofPadua,in2011and2015,respectively.Heiscurrentlyapost-doctoralresearcherwiththeUniversityofPadua,focusingoncomputationalmodelingofcognitiveprocesses.Hismaininterestsincludedeeplearning,recurrentneuralnetworksandprobabilisticgenerativemodels,whichareappliedtoinvestigatevisualprocessingandattentionalmechanisms.DuringhisPhD,hedevelopedaneurocomputationalframeworktosimulatecognitivefunctionsbasedonunsuperviseddeeplearning.Besidedhisprimaryinterestincognitivescience,heworkswithcomputerscientiststoimprovethecomputationalaspectsoflearningmodels,forexamplebyexploitingparallelcomputingarchitectures (GPUs)orby inventingnovel learningalgorithms.Healsocollaborateswithelectronicengineerstoimprovetelecommunicationtechnologiesbyoptimizingwirelessandunderwaterdatatransmission.He has been recently invited as instructor to the annualmeeting of the Cognitive Science Society, where hediscussedhisunsupervisedmodelingapproachonaspecialworkshopdedicatedtodeeplearning

General info. All info can be found at: http://www.dei.unipd.it/ssie Venue: Casa della Gioventù, via Rio Bianco, 39042 Bressanone, Italia

How to Submit a Proposal All those young researchers and PhD students who wish to present their research activities at the Workshop, should send an email to: ssie@dei.unipd.it clearly indicating:

Name Affiliation/Postal Address Phone/Fax Contact Email Title of the Presentation Abstract (e-mail format is also OK)

Please use English language. The deadline for submitting proposals is June 20th 2017. Presenting your Research Activity at the SSIE Each presenter will be assigned a slot of 20 minutes, including 5 minutes for questions. All presentations will be in English. Registration & Fee The organizing committee decided that, for PhD students, the Registration fee to the School is free, but participants will have to pay for their travel and living expenses. For organization purposes, all the participants are invited to Register by sending an e-mail to: ssie@dei.unipd.it with subject: Registration to Summer School on Information Engineering 2017 clearly indicating:

Name Affiliation/Postal Address Phone/Fax Contact Email

Please use English language. The deadline for registering is June 20th 2017. Accommodation: As for the past years, we have an agreement with Grüner Baum Hotels (www.gruenerbaum.it) in Bressanone, which will provide lodging for all the persons attending the Summer School of Information Engineering (students, teachers and accompanying persons) at discount prices (July 2th 2017 - July 7th 2017 only) (see SSIE website for details: http://www.dei.unipd.it/ssie) Net prices single room 69.00 Euro per person per day (breakfast included) double room 53.50 Euro per person per day (breakfast included) double room (single use) 90.50 Euro per person per day (breakfast included) half pension supplement 17.50 Euro per person per day meal 9,30 Euro for a first course Discount prices if staying for 3 or more nights single room 57.50 Euro per person per day (breakfast included) double room 46.50 Euro per person per day (breakfast included) double room (single use) 74.00 Euro per person per day (breakfast included)

Taxes: Euro 2,00 per person/night. Included in the prices:

§ Breakfast Grande buffet § Entrance to swimming pool § The BRIXENCARD

Reservation by phone (+39 0472 274 100), fax (+39 0472 274 101) or email (info@grunerbaum.it) with reference to: Summer school prof. Meneghesso/Pupolin). To guarantee your room reservation, a credit card guarantee or a deposit of 60,00 Euro per room is required.