Standard Products: PPLN Lithium Niobate: Surface Acoustic ... · Standard Products: PPLN Lithium Niobate: Surface Acoustic Wave Integrated Optic Optical Low Pass Filters AO Deflectors

Standard Products:

PPLN

Lithium Niobate: Surface Acoustic Wave Integrated Optic Optical Low Pass Filters

AO Deflectors

AO Modulators

AO Tunable Filters

EO Q-Switches

RF Drivers

2011

Crystal Technology, Inc. is the leading manufacturer of oxide single crystals and selected optical components based on these crystals. From our facilities in Palo Alto, California, CTI products are shipped to satis-fied customers around the world for a wide range of applications in electronics, optics and acoustics. Our focus is on quality, cost leader-ship and sound environmental performance in the products we manufacture. CTI main-tains certification to both the ISO9001:2000 and ISO14001:2004 quality and environmen-tal management standards.

We have a staff of 150 people, working in modern facilities with the latest equip-ment. Volume manufacturing is our spe-cialty. Notable is our annual production of 60 tons of single-crystalline lithium niobate. We pursue active research and development efforts, targeting both product and process improvements.

Crystal Technology manufactures products meeting various standards and regulations including Reduction of Hazardous Substrates (RoHS) — EU Directive 2002/95/EC. For more details on specific products, please contact the Sales Department.

This brief catalog listing comprises only our standard products, available for rapid delivery in quantity. Lithium Niobate products are cov-ered first, followed by acousto-optic compo-nents. For volume applications, we are eager to work with you directly to provide solutions to your needs.

Thank you for your interest in our com-pany and our products. We look forward to serving you.

Jon Fowler, President and CEO

Mark Batzdorf, Executive Vice President and CFO

Pete Blandford, VP Manufacturing

Dieter Jundt, VP Research and Development

OUR EMPLOYEES

— ROUND THE CLOCK —

ENGINEERING

SUPPLY CHAIN

(back – l-r) Frederic Garderes, Director, Supply Chain; Martin Smith, Quality Assurance Manager

(front – l-r) Mona Salzman, Senior Buyer; Dawn Joyner, Planner;

Van Ly, Buyer; Maureen Van Damme, Senior Buyer

SALES TEAM

(l-r) Denise Wong, Sales Representative Specialist; George Sadilek, Regional Sales Manager;

Jon Fowler, President and CEO; Arron Campi, Marketing and Sales Manager;

Lawrence Chiang, Sales Engineer

Lithium Niobate Wafers — SAW

Page 4 Lithium Niobate Crystals

Orientation: Y-axis (all dimensions in mm) Part # A Thickness ∅ Black Y faces

97-01030-01 30.5 0.5 100 no polished / ground


97-02483-01 32.5 0.5 100 yes polished / ground


Orientation: Y-axis 64° Rotated (all dimensions in mm) Part # A B C Thickness ∅ Black <Y/+Z> / <Y/-Z>

97-02126-02 32.5 14.0 14.0 0.35 100 no polished / ground

97-02472-01 32.5 14.0 14.0 0.5 100 yes polished / ground

97-02529-01 32.5 14.0 14.0 0.5 100 no polished / ground

Orientation: Y-axis 128° Rotated (all dimensions in mm) Part # A B Thickness ∅ Black <-Y/+Z> / <+Y/-Z>

97-01064-01 32.5 14.0 0.5 100 no polished / ground

97-02471-01 32.5 14.0 0.5 100 yes polished / ground

97-02471-03 32.5 14.0 0.35 100 yes polished / ground

<-Y>

Y-axis 128° Rotated Orientation

A

B

<128°RY><+Z>

<-Y/+Z> face

<-X>

<X>

<Z>

Y-axis Orientation

A

<Y>

<Y> face

<Y>


A

C

B

D<15°RY><Z>

<-X> face

<Y>


A

B

<41°RY>

<-X> face

<Z>

C

<Y>


A

B

<64°RY><+Z>

<Y/+Z> face

<X>

C

Orientation: Y-axis 15° Rotated (all dimensions in mm) Part # A B C Thickness ∅ Black <+Y/+Z> / <-Y/-Z>



Orientation: Y-axis 41° Rotated (all dimensions in mm) Part # A B C Thickness ∅ Black <+Y/+Z> / <-Y/-Z>



1040 East Meadow Circle, Palo Alto, California 94303 Tel: 650-856-7911 www.crystaltechnology.com Fax: 650-354-0173

Lithium Niobate Wafers — Optical

Orientation: X-axis (all dimensions in mm) Part # A B Thickness ∅ -X / +X

97-01183-01 20.3 14.0 0.5 76.2 polished / ground

99-00629-01 20.3 14.0 0.5 76.2 polished / polished

97-00663-01 20.3 14.0 1.0 76.2 polished / ground

99-00630-01 20.3 14.0 1.0 76.2 polished / polished

97-01912-01 30.5 15.2 1.0 100 polished / ground

97-01763-10 30.5 15.2 1.0 100 polished / polished

97-02604-01 42.5 27.5 1.0 125 polished / polished

Orientation: Z-axis (all dimensions in mm) MgO Part # A B Thickness ∅ -Z / +Z Mol %

97-00567-03 20.3 14.0 0.5 76.2 polished / ground NA

99-00042-01 20.3 14.0 0.5 76.2 polished / polished NA

97-03044-01 20.3 14.0 0.5 76.2 polished / polished 5.0

97-03044-02 20.3 14.0 1.0 76.2 polished / polished 5.0

97-00567-01 20.3 14.0 1.0 76.2 polished / ground NA

99-60011-01 20.3 14.0 1.0 76.2 polished / polished NA

97-01514-10 30.5 15.2 1.0 100 polished / polished NA

97-02641-01 42.5 27.5 1.0 125 polished / polished NA

<-Y>

<+Y>

<+X>

X-axis Orientation

A

<-X>

<-Z>

B

<-X> face

<+X>

<+Z>

Z-axis Orientation

A

<-Z>

<+Y>

B

<-Z> face

Single-side polished lithium niobate SAW wafers

Lithium Niobate Crystals Page 5

Applications■ Surface Acoustic Wave Devices

■ Optical Wave Guides

■ Optical Low Pass Filters

■ Optical Isolators

■ Wollaston Prisms

Double-side polished lithium niobate optical wafers

US PATENT#5310448



Basic Overview

The following discussion answers common questions customers have when processing lithium niobate single crystal substrates for a variety of applications.

■ Handling

■ Cleaning

■ Surface Quality

■ Wafer Flatness

■ Crystal Polarity

Handling

As is the case with most substrate materi-als used in device manufacture, operators should take the precautions of using gloves and vacuum wands when handling LN substrates. The plastic shipping containers, either individual carriers or boats of up to 25 wafers, should be sealed at all times and opened only under a flow hood or in a clean-room environment. In addition to these considerations, there are a few prop-erties specific to LN of which all personnel involved in its handling should be aware.

1) LN is a brittle material. Our edge-grind-ing process minimizes chipping and cracking by producing a smooth radius on the wafer’s edge. For other prod-uct geometry’s, edge bevels serve the same function. However, care must still be taken to avoid rough handling or impact of any kind to LN substrates. Vacuum wands or tweezers should ideally be made of relatively soft, non-metallic materials. This also applies to any carriers or boats used in wafer processing equipment.

2) LN is both pyroelectric and piezoelectric, and therefore generates an electrical potential when either thermally cycled or mechanically stressed. Since thermal cycling is virtually unavoidable during device manufacturing, it is important to be aware of the effects of these proper-ties. Most importantly, build-up of static charge on the wafer causes it to act as a ‘dust magnet’. Hence, special care must be taken to maintain a particu-late-free environment during and after thermal processing. The charge build-up may also create mechanical strains in the crystal, and thereby increase the risk of wafer breakage. Thermal shock should be avoided by allowing for gradual heating and cooling ramps (as a rule of thumb, we recommend ~1 degree Celsius/minute). In routine pro-cessing the piezoelectric properties of LN shouldn’t present a problem, as long as the wafer is not squeezed excessively in fixturing or during handling.

Cleaning

In standard volume wafer production, CTI uses either cassette-to-cassette automated wafer scrubbing or sonic batch cleaning.

For routine hand-cleaning of parts, we rec-ommend immersion in a solution of soapy water with a pH between 7.0 and 8.5 or low concentration ammonia in water, fol-lowed by hand-wiping with undenatured ethyl alcohol, or, in a mixture of four parts alcohol and one part acetone. Using a litho-pad, lens tissue, or cotton swab, the hand-wiping should always occur in a con-tinuous motion from one edge to the other to avoid leading- or trailing-edge stains.

Throughout any cleaning process, manual or otherwise, it is critical to avoid letting the wafer dry during intermediary steps or prior to the final drying step. Premature drying leaves stains or residue from the baths or cleaning solutions that can be difficult to remove. Parts should be moved directly from bath to bath and should not sit out in open air prior to the final drying step, whether that is spin-drying, vapor degreasing, or manual blow-drying.

Surface Quality

The U.S. Military Surface Quality Specification, MIL-O-13830A, is a standard for the speci-fication of surface quality in optical com-ponents. This standard is used at CTI to specify various levels of surface quality in our products, and is commonly referred to as ‘scratch-dig’. We compare our products with scratch and dig standards manufac-tured according to U.S. military drawing C7641866 Rev L, and our inspection areas are equipped with lighting which meets the standard’s requirements.

In the scratch-dig system, a given quality level is expressed as two numbers—the first specifies the maximum allowable width of scratches, and the second specifies the maximum allowable diameter of digs, or pits. Typical scratch-dig numbers used at CTI range from 10-5 to 60-40, and specify defect size limits as shown in Table 1.

Lithium Niobate Single Crystal Substrate

Scratch Max Dig Max # width # diameter (µ) (µ)

10 1 5 50

20 2 10 100

40 4 20 200

60 6 40 400

Table 1. Scratch-Dig



Wafer Flatness

Flatness is a critical parameter in many applications for LN wafers, particularly those involving the photolithography of fine structures (<1 micron). CTI employs a non-contact, grazing incidence interferom-eter to analyze reflected fringe patterns and reconstruct the wafer topography math-ematically. Because of the oblique angle of incidence of the laser source, the machine is capable of measuring as-cut or lapped surfaces as well as polished surfaces.

Wafers can be sorted by a variety of flat-ness parameters, both clamped (using a vacuum chuck) and unclamped (free-state). Clamped parameters include total indicated reading (TIR), total thickness variation (TTV), and taper. Unclamped parameters include warp and bow. The figure below provides definitions for each of these.

For standard wafers, CTI specifies clamped wafer flatness by TTV alone. This also allows customers the opportunity to verify flatness on wafers using a digital microm-eter and the five point measurement method for gauging total thickness varia-tion as described in ASTM standard F533. For specifying free-state flatness in standard wafers, warp alone is used, since the bow parameter as defined here is primarily used to describe the direction of curvature, not the overall magnitude.

Flatness on the surfaces of non-wafer geometry’s of LN (blocks, plates) are mea-sured with an interferometer. Flatness is expressed in fraction of the wavelength of the incident light, 633 nm.

Crystal Polarity

Many LN applications call for the specifica-tion of electrical polarity of the various faces of the fabricated substrate. Upon heating or compression of lithium niobate across the c axis, the lithium and niobium ions move closer to their centered (paraelectric) positions relative to the oxygen layers of the unit cell. This reduced net polarization allows a compensating buildup of electrons on the plus face, causing it to become negatively charged.

Accordingly, LN polarity is determined by measuring the charge generated from heating or squeezing a part with a micro-voltmeter. The deflection of the needle (positive or negative) indicates the polarity of a given face. In practice, we have found that heating the crystal, as opposed to squeezing it, provides the least ambiguous result and the least potential for damaging polished surfaces.

TTV

Taper

Selected Focal Plane

AB

SelectedFocal Plane TIR = |A| + |B|

WarpSelected

Focal Plane

Bow

SelectedFocal Plane

Total ThicknessVariation

FPD = A or B(whichever is greater)

AB

Focal Plane(retilted)

ToTal IndIcaTed ReadIng (TIR)

The difference between the highest and lowest point on the wafer surface measured normal to the selected focal plane. This essentially removes overall taper of the wafer from the measure-

ment.

Focal Plane devIaTIon (FPd)

The greatest distance above or below the selected focal plane (best fit plane). Measurements

are reported as positive or nega-tive, whichever is greater.

WaRP

The difference between the highest and lowest point on the wafer surface measured normal to the selected focal plane in the

free state.

BoW

The difference between the selected focal plane and the sur-face of the wafer at the center in the free state. This value can be

positive or negative.

ToTal ThIckness vaRIaTIon (TTv)

The difference between the highest and lowest point on the top surface

of the wafer.

local ThIckness vaRIaTIon (lTv)

A stepper exposure simulation mea-sures the difference between the

highest and lowest point on the top surface of the wafer for each expo-sure site. Results can be reported as the maximum value found for each wafer or the percent exposure sites under a given LTV value. Common

site areas used are 5x5mm and 10x10mm.

TaPeR

The lack of parallelism between the back surface of the wafer and the

selected focal plane (best fit plane). The value reported is the amount of rise in the focal plane, not the

slope of the surface, and is therefore expressed in microns for the entire

given diameter.

Figure 1. Flatness Parameter Definitions


Black Lithium Niobate

Chemically Reduced Lithium Niobate: Processing, Properties and Improvements in SAW Device Fabrication and Performance

Lithium niobate (LN) single crystals find wide application as substrates for surface acoustic wave (SAW) devices. This material’s large piezoelectric coefficients enable fabri-cation of SAW filters with low insertion loss. The optical transparency and pyroelectric response of LN may, however, cause prob-lems in its processing and application.

The high pyroelectric constant makes LN susceptible to charging upon undergo-ing temperature changes. These surface charges can spontaneously short, with the associated sparking causing processing or operational failures. Common processes such as photoresist baking or wire bonding can induce such discharges. For finished SAW devices, discharges due to changes in ambient temperature can produce unde-sired voltage spikes as seen in Figure 1.

Reduction processing generally is applied to LN after growth and poling. The degree of reduction depends on the reduction temperature and gas atmosphere, as well as the crystal’s surface roughness, Li/Nb composition and sample size. For these experiments, lapped 128º RY LN wafers of congruent composition were reduced in an atmosphere of 10% H2 and 90% N2 for one hour at temperatures ranging from 400ºC to 750ºC. After reduction, wafers were polished on both sides and analyzed electrically and optically.

To test reduced LN wafers’ susceptibility to pyroelectric charging, wafers were cooled on a hot plate from 120ºC to 80ºC at 10ºC/min. while the surface charge was monitored using an electric field meter. For untreated LN wafers such a procedure typi-cally generates a surface field of 2 kV/cm, which requires several hours to dissipate. As shown in Figure 2, none of the reduced wafers showed any measurable electric field.

SAW filters with a center frequency of 78 MHz were fabricated at Andersen Laboratories from several reduced as well as untreated wafers. Center frequency, insertion loss, SAW velocity and tempera-ture coefficient of reduced LN were the same as untreated LN under normal oper-ating conditions.

We gratefully acknowledge Ray Sawin and Jeff Galipeau of Andersen Laboratories for fabrication and testing of the SAW samples.

References:

Bordui, P.F. et al., J. Appl. Phys., (1999). 85(7): p. 3766-3769.

Standifer, E.M. et. al., Proceedings of the 1998 International Frequency Control Symposium. (1998).

Figure 1. Pyroelectric test results for SAW devices fabricated on untreated LN. The lower graph shows the temperature ramp used for the test. The upper graph shows the peak burst voltages for the observed pyroelectric discharges. Eight burst were detected. On treated LN, no bursts were observed.

Figure 2. Surface electric field upon cooling such as is typical during processing. Solid line: untreated LN. Dashed line: LN reduced at 394ºC for 1 hr.

0 50 100 150 200 250 300 350 400 450-40

0

40

80

0.0

0.4

0.8

1.2

1.6

Time (minutes)

Pea

k B

urs

t Pote

nti

al (

V)

Tem

per

ature

(ϒC

)

0 0 5 10 15 2080

100

80

120

80

0.0

0.0

0.5

1.0

1.5

2.0

Time (hours)

Surf

ace

Fiel

d (

kV/c

m)

Tem

per

ature

(ϒC

)

untreated wafer

reduced wafer (60 min at 394 ϒC

US PATENT#7381397

US PATENT#7153487

US PATENT#6319430




Lithium Niobate Material Quality Classification


Crystal Technology, Inc. currently specifies three grades of crystal quality. As a gen-eral rule, crystal quality is continuously improved as the processes are improved. However, there are of ten trade-of fs between improving quality and reducing costs. Our technical staff regularly meets with the leading customers in each indus-try in order to find the best compromise between quality improvements and cost reduction. The following material grades are in order from the least critical (and lowest cost) to the most demanding:

■ SAW Grade

■ Refractive Grade

■ Optical Grade

SAW Grade

This is the most commonly produced grade and is used for making surface acoustic wave devices. This is a non-optical appli-cations and the least demanding in terms of impurities and crystalline perfection. Reduced material (“black LN”) is often adequate or even preferred for its lack of pyro-electric charging. Inclusions can be tolerated to some extent as long as they are small enough not to interfere with the exci-tation or propagation of the SAW waves. Crystal growth for SAW material is generally optimized for high efficiency. The crystals are grown quite long, converting a large fraction of the melt into crystal material.

CTI rejects material that is excessively col-ored (excessive contamination), cracked, or shows signs of twinning or large angle grain boundaries (>0.2 º). Material with large inclusions or a high density of smaller inclusions is also rejected.

Refractive Grade

This is material used for lower demand-ing optical applications such as Wollaston prisms for DVD heads and blur-filters for digital still cameras. Strain (dislocations) are tolerable, but inclusions are not. The crystals are grown at similar lengths to SAW grade material, but inspected and screened to avoid even low densities of inclusions.

Optical Grade

This material is used for the most demand-ing optical applications such as high speed modulators and polarization-controlling devices. Optical material is low strain with no inclusions. To avoid grain boundaries and strain build-up, the crystals are grown shorter (typically less than half the SAW grade crystal length). The growth environ-ment (furnace construction) as well as growth parameters (pull rate, rotation) are optimized for low strain, not high through-put. To minimize effects of non-congruency and impurities, a smaller fraction of the melt (~50%) is converted into crystal than for the other two grades. A proprietary inspection method is used to visualize strain before the crystal is sliced. Only the best of these crys-tals are further processed, with the others either graded as refractive or recycled.

Chemically reduced (black) lithium niobate SAW wafers.

Domain Periods (µm) Y (mm) Z (mm) X (mm) Part #

25.5 25.9 26.4 26.9 27.4 27.8 28.2 28.7 11.5 0.5 20 97-02182-06 11.5 1 20 97-02384-06 11.5 0.5 50 97-02182-08 11.5 1 50 97-02384-08

28.5 28.7 28.9 29.1 29.3 29.5 29.7 29.9 11.5 0.5 20 97-02182-03 11.5 1 20 97-02384-03 11.5 0.5 50 97-02182-07 11.5 1 50 97-02384-07

30.0 30.2 30.4 30.6 30.8 30.95 31.1 31.2 11.5 0.5 20 97-02256-01 11.5 1 20 97-02383-01 11.5 0.5 50 97-02256-02 11.5 1 50 97-02383-02

18.6 18.8 19.0 19.2 19.4 19.6 19.8 20.0 20.2 20.4 11.5 0.5 20 97-02355-01

Figure 1. Grating periods required for OPO operation in PPLN

1.5 2.0 2.5 3.0 3.5 4.018

20

2228

30

32

1.064 µm pump, 50°C

1.064 µm pump, 150°C

0.78 µm pump, 150°C

Dom

ain

grat

ing

perio

d (µ

m)

Idler wavelength (µm)

Periodically Poled Lithium Niobate (PPLN)

PPLN crystals offer high gain and non-critical quasi phase-matching for a wide range of nonlinear optical interactions, such as difference frequency generation and OPO appli-cations pumped in the near infrared. In addition to single grating devices, where only one interaction is phase-matched, PPLN chips with multiple gratings along the propaga-tion direction, chirped gratings, and fan-out gratings are also feasible.

PPLN devices offered by Crystal Technology are fabricated from our integrated optics substrates using electrical field poling process, and meet stringent criteria for uniformity and crystalline quality. The most popular PPLN part numbers for DFG and OPO applica-tions have various periodicity patterns on the same chip. This enables coarse tuning by translating the chip so that a different grating is utilized. Fine tuning is achieved by adjusting the temperature of the PPLN device. The period required for phase-matching a particular interaction is easily calculated and Figure 1 shows the example of an OPO pumped by a Nd:YAG or Ti:Sapphire laser with output wavelengths ranging from 1.5µm to 4µm.

PPLN substrate has been etched to reveal domain strips.

Applications■ High resolution mid IR spectroscopy

■ OPO and DFG for laser science experiments

■ Missile counter-measure laser systems

Page 10 Periodically Poled Lithium Niobate Crystals

Parameter & Value

a1 5.35583 b1 4.629×10-7

a2 0.100473 b2 3.862×10-8

a3 0.20692 b3 -0.89×10-8

a4 100 b4 2.657×10-5 a5 11.34927a6 0.015334

ƒ = (T – 24.5°C) (T + 570.82)

a2 + b2ƒ

λ2 – (a3 + b3ƒ)2

a4 + b4ƒ

λ2 – a52

+ – a6λ2 a1 + b1ƒ + ne2 =

Sellmeier Equation for ne in Congruent LN

λ = wavelength in mm


Magnesium-doped Periodically Poled Lithium Niobate (MgO:PPLN)

Periodically Poled Lithium Niobate Crystals Page 11

Applications■ SHG for green and blue generation from

IR sources

■ Laser Based RGB displays

MgO PPLN material has successfully been used to generate green1 and blue2 laser beams with good efficiency. Crystal Technology produces a range of such crystals where all the critical manufacturing steps are performed in house. Our growth method is well developed and geared to high volume production thus lowering manufacturing cost and allowing our crystals to be deployed into mass market application such as laser projection displays and other consumer applications. The purity of starting powders and the crystal growth parameters are tightly controlled to ensure consistent quality guaran-teeing stable optical properties. Our research has resulted in crystal growth that is guar-anteed to avoid photorefractive damage yielding devices with well controlled refractive index and birefringence.

Our proprietary electric-field poling method ensures good domain fidelity leading to high nonlinear effective coefficients and our MgO:PPLN material has successfully been employed to generate green and blue laser beams by frequency-doubling of semicon-ductor lasers. Figure 1 shows inverted domain patterns in MgO:PPLN. The high fidelity on both the +Z face as well as the opposite crystal face demonstrates the capability and reproducibility of the poling process.

The standard MgO:PPLN parts have 3 periodicities on a chip to allow the user to opti-mize operating temperature for the device. Figure 2 shows the frequency doubled power of a single-mode laser at 1064nm as a function of the chip temperature for each of the three periods. Both anti-reflection coated as well as uncoated chips are available in three lengths, 1mm, 3mm and 10mm to support both short and long pulsed sources at various power levels. Custom designs are also available.

MgO:PPLN offers unique advantages for frequency doubling to visible wavelengths because it is a non-critical quasi phase-matching interaction utilizing the highest nonlin-ear optical coefficient d33. A short crystal ensures high conversion efficiency in ultra-short pulse lasers while minimizing group velocity dispersion.3 The large nonlinearity together with a long crystal allows high second harmonic generation efficiencies even at modest power levels. A 10mm long crystal for example will generate over 50mW of green light at circulating fundamental power of less than 4W assuming confocal focusing.

REFERENCES1. H. Furuya, A. Morikawa, K. Mizuuchi, and K. Yamamoto, Jpn. J. Appl. Phys., Part 1 45, 6704 (2006).

2. M. Maiwald, S. Schwertfeger, R. Guther, B. Sumpf, K. Paschke, C. Dzionk, G. Erbert, and G. Trankle, Opt. Lett. 31, 802 (2006).

3. M. A. Arbore and M. M. Fejer, Opt. Lett. 22, 13-15 (1997).

Domain Periods (µm) Y (mm) Z (mm) X (mm) Part #

6.9 - 6.96 for 1064nm doubling, No AR coating, deff >14pm/V 3 0.5 1 97-03040-01 3 0.5 3 97-03040-02 3 0.5 10 97-03040-03

6.9 - 6.96 for 1064nm doubling, DAR, R <0.25% @1064 nm, 3 0.5 1 97-03038-01 R <0.5% @532nm, deff >14pm/V 3 0.5 3 97-03038-02 3 0.5 10 97-03038-03 5.22 - 5.27 for 976nm doubling, No AR coating, deff >14pm/V 3 0.5 1 97-03043-01 3 0.5 3 97-03043-02 3 0.5 10 97-03043-03

5.22 - 5.27 for 976nm doubling, DAR, R <0.25% @976 nm 3 0.5 1 97-03042-01 R <0.5% @488nm, deff >14pm/V 3 0.5 3 97-03042-02 3 0.5 10 97-03042-03

Figure 2. Temperature tuning of 1064nm frequency doubling for three gratings on 10mm chip.

30 35 40 45 50 55 60 65 70 75 80

SHG

Inte

nsity

(rela

tive

units

)

Temperature (°C)

Figure 1. Inverted domain patterns on the two faces of the crystal, demonstrating good fidelity throughout the crystal volume.


Page 12 Periodically Poled Lithium Niobate Crystals

Optical Materials for Visible Light Applications

Magnesium-doped Lithium Niobate

While congruently melting lithium niobate (CLN) can be grown at large size and with excellent uniformity, the material suffers from photorefractive damage.1 This unde-sirable effect can be avoided by using mag-nesium oxide (MgO) doped LN. 2,3

Crystal Technology has done extensive research on growth and characterization of MgO:LN.4 Dozens of crystals have been grown from various starting melt composi-tions to establish optimal growth param-eters for achieving crystals of high optical quality. The OH absorption peak location is a good indicator of the anti-site defect density. Material with a fully shifted OH absorption peak is “above threshold” and resilient to photorefraction and thus use-ful for visible light applications. Figure 1 shows absorption spectra of crystal samples with different compositions. Only the sam-ple showing a single, shifted peak (green) would be useful. Based on such results, we have chosen a starting melt composi-tion that guarantees all wafers from the grown crystal to be free of photorefraction. Although it is common to state only the MgO concentration for a photorefractive resistant material, our research confirms that precise control of the Li/Nb ratio is also necessary to guarantee a crystal above threshold.5

Phase-matching temperature (SHG to 532 nm using d32 or d33) is a sensitive charac-terization tool to reveal axial composition variations and to distinguish crystals grown from different compositions. Such measure-ments resolve differences as low as 0.04 mol% of MgO in the melt.4 Figure 2 shows the results of phase matching temperature as function of solidified melt fraction for crystals grown from different MgO concen-

trations in the melt, ranging from 4.9 to 6.0 mol%. In this range, the phase-match-ing temperature decreases with increasing MgO concentration. For every grown crys-tal, the temperature increases with increas-ing solidified melt fraction, indicating that the magnesium concentration decreases during growth, consistent with a distribu-tion coefficient higher than 1.6

The impact of different Li/Nb ratios for the same initial MgO concentration on the phase-matching temperature is smaller, but clearly measurable. While a certain varia-tion from top to bottom of a grown crystal is unavoidable, this effect is controlled in our growths to minimize the impact on the customer’s application. The quasi-phase-matching temperature for 1064nm SHG for example varies by less than 4ºC for any crystal produced with our standard wafer material.

The growth experiments and precision characterization tools have enabled Crystal Technology to optimize the overall growth process. This allows a lower wafer cost while still maintaining the required perfor-mance consistency. All wafers are guaran-teed to be from a crystal entirely above the photorefraction threshold, and the birefrin-gent phase-matching temperature for every wafer is between 109 ºC and 116 ºC.

Stoichiometric Lithium Tantalate (SLT)

Crystal Technology produces 3” diameter SLT wafers by the VTE method. This material has been successfully used for high power generation of visible light.7 Photorefraction, GRIIRA,8 as well as peak power damage are further reduced as compared to MgO:LN.7 CTI started delivery of SLT wafers and PP:SLT devices in 2009.

Materials Research

Crystal Technology is continually expand-ing the product portfolio for periodically poled devices and wafers used to produce such devices. A recent breakthrough allows production modified CLN with lowered absorption from 2.5µm to 2.8µm, making OPO oscillation possible at these wave-lengths.

Products

To see the latest product offering, please visit our website. Double-side polished Z-axis oriented 3” diameter wafers of MgO:LN can be supplied with attractive volume discounts. Other orientations or increased wafer size (100mm) can be sup-plied on demand.

Orientation/ Part # Thickness ∅

MgO:LN

97-03044-01 Z-axis / 0.5 mm 76.2 mm 97-03044-02 Z-axis / 1.0 mm 76.2 mm

SLT

97-03022-02 Z-axis / 1.0 mm 76.2 mm

REFERENCES1. F. Jermann, M. Simon, and t. E. Kratzig, J. Opt.

Soc. Am. B 12, 2066 (1995).

2. J. L. Nightingale, W. J. Silva, G. E. Reade, A. Rybicki, W. J. Kozlovsky, and R. L. Byer, Proc. SPIE 681, 20-24 (1986).

3. D. A. Bryan, R. Gerson, and H. E. Tomaschke, Appl. Phys. Lett. 44, 847 (1984).

4. D. H. Jundt, M. C. C. Kajiyama, D. Djukic, and M. Falk, Journal of Crystal Growth, In Press, Corrected Proof (2009).

5. Y. Furukawa, K. Kitamura et.al., Applied Physics Letters 77, 2494-6 (2000).

6. S. I. Bae, J. Ichikawa, K. Shimamura, H. Onodera, and T. Fukuda, Journal of Crystal Growth 180, 94-100 (1997).

7. D. S. Hum, R. K. Route, G. D. Miller, V. Kondilenko, A. Alexandrovski, J. Huang, K. Urbanek, R. L. Byer, and M. M. Fejer, Journal of Applied Physics 101 (2007).

8. Y. Furukawa, K. Kitamura, A. Alexandrovski, R. K. Route, M. M. Fejer, and G. Foulon, Applied Physics Letters 78, 1970-2 (2001).

Figure 2. Birefringent Phase-matching temperature as function of solidified melt fraction for different starting melt compositions, including CTI standard composition at MgO 5.0 mol%

85

9095

100

105

110

115

120

125

CTI Standard growth

MgO - 6.0 mol%

MgO - 5.5 mol%

MgO - 5.3 mol%

MgO - 4.9 mol%

MgO - 5.0 mol%

T pm(o C

)

Solidified Fraction g (%)

Figure 1. OH absorption peak of 3 slices from the same crystal.

3440 3460 3480 3500 3520 3540 3560-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Abso

rptio

n C

oeffi

cien

t - (c

m-1

)

Wavenumber (cm -1)

Below Threshold Threshold region Above threshold


For proper modulator operation, the opti-cal beam and sound beam must interact with the proper relationship. This requires several conditions be met simultaneously.

First, the acoustic beam (modulator hous-ing) must be slightly rotated off perpen-dicular to the optical beam so that the Bragg angle condition is met as shown in Figure 1. This can be accomplished either side of perpendicular with only a slight dif-ference in performance as described later. The proper Bragg angle for each device is tabulated on the individual data sheets.

Second, the modulator must be trans-lated vertically so the optical beam passes through the acoustic beam. This adjust-ment is more critical for the high-perfor-mance (wideband) units which have acoustic beams of very small height. In fact, a slight design compromise is made in these units to avoid having this adjust-ment be excessively critical. An estimate of the required precision and stability of this adjustment is 25% of the ”active aper-ture”, as tabulated on the data sheets, e.g. ~.001” for Model 3350.

Third, the focusing lens for the incident optical beam must be positioned longitudi-nally so that the optical beam focus (beam waist) is located at the acoustic column. If the beam waist location is determined in air before the modulator is introduced, then the lens should be moved away from the modulator location to account for the increased optical path length inside the modulator crystal. This increment is ~6.2

mm for Models 3080 and 3110, and ~1.7 mm for Model 3200.

To obtain the proper optical beam waist diameter (d) stipulated in the device data sheets requires the following relationship:

A single-element, plano-convex lens, oriented as shown, will give satisfactory results.

Finally, in the case of the Model 3350, the optical beam should be positioned close to the acoustic transducer to minimize effects of acoustic attenuation and acoustic beam spreading from diffraction.

Figure 2 is included as an aid in obtain-ing correct adjustments. The images are shown as outputs without the recollimat-ing optics. However, they should not be viewed directly, but as reflections from a diffuse surface such as a 3 x 5-inch file card. The zero and first orders are point for point complementary (sum = 1). The missing area in the zero order beam corre-sponds to light diffracted into the first order. In practice, the zero order may be easier to interpret, particularly if the laser power can be reduced to avoid eye saturation.

It should be noted that there is a slight variation in diffraction efficiency with the polarization of the incident optical beam. Polarization perpendicular to the mounting surface of the modulator is usually pre-ferred in TeO2 devices.

Acousto-Optic Components Page 13

Basic Theory

As shown in Figure 1 (a) and (b), acousto-optic devices operate by Bragg diffraction of an incident light beam from a moving acoustic wavefront. The intensity of light dif-fracted into the output beam is dependent on the power of the acoustic beam which is in turn dependent on the modulation signal input to the driver. The modulation signal to optical output transfer function is monotonic but non-linear. This is unimportant for digital modulation.

Alignment

Momentum VectorRepresentation

ki

kd

k AIncident

Light

Sound

DiffractedLight

(B) ORIENTATION OF WAVEFRONTS

(A) OPTICAL SCHEMATIC

Λ

λ λ

θB

θB

θB

θB

λ

D

0 – OrderUndiffracted

1st OrderDiffracted

Λ

d

F

~

Figure 1. Modulator Configuration

Acousto-Optic Theory

d = 1.27F λ D

Where: D = Input laser beam, diameter (1/e2 intensity points) F = Focal length of input focusing lens λ = Light wavelength

Figure 2. Alignment Beam Patterns

Zero Order Beam 1st Order Beam

Bragg Angle Incorrect


Height Adjustment Incorrect


Correct Alignment


Acousto-Optic Modulators

Page 14 Acousto-Optic Components

AO modulators allow for analog amplitude modulation of collimated light. Diffraction occurs by applying RF energy at the center frequency. Changing the RF level will vary intensity of the light being diffracted. The diffracted light will be frequency shifted up (+1 order) or down (-1 order) by the carrier frequency of the RF signal.

Applications■ Photo Processing

■ Micro Machining

■ Laser Displays

■ Disc Mastering

■ Doppler Frequency Shifting

■ Pulse Picking

US PATENT#7595929

RoHS versions available, call to place RoHS order.

RF Min Rise Active Acoustic Wavelength Center Power Time Aperture ConnectorModel # Part # (nm) Material Freq (Watts) (ns) (h x l) Package Type

Amplitude Modulation

3200-1220 97-02513-01 257 Crystalline-Quartz 200 1.0 10 0.25 x 0.5 Style 2B SMB 3200-1210 97-02377-01 325-365 Crystalline-Quartz 200 2.5 10 0.25 x 0.5 Style 2B SMB 3220-120 97-02439-01 413 Crystalline-Quartz 220 2.5 19 0.25 x 0.5 Style 2B SMB

3110-121 97-01638-01 442-488 TeO2 110 0.5 18 0.60 x 2.5 Style 2 SMB3200-120 99-48146-10 442-488 TeO2 200 0.7 10 0.45 x 2.5 Style 2 SMB3224-120 97-20010-01 442-488 TeO2 224 0.7 10 0.45 x 2.5 Style 2 SMB3225-120 97-20122-01 442-488 TeO2 224 0.9 15 0.60 x 2.5 Style 2 SMB

3350-120 97-02089-01 488-532 TeO2 350 1.0 6 0.10 x 2.0 Style 2 SMB

3080-110 99-48201-10 442-633 TeO2 80 0.5 25 1.00 x 2.5 Style 1 SMB3080-120 99-48201-11 442-633 TeO2 80 0.5 25 1.00 x 2.5 Style 2 SMB3080-151 99-01000-01 442-633 TeO2 80 1.0 25 2.00 x 2.5 Style 5 BNC3110-120 99-20068-01 442-633 TeO2 110 0.7 18 0.60 x 2.5 Style 2 SMB

3200-115 97-01621-01 515-633 TeO2 200 1.5 10 0.40 x 2.5 Style 1 SMB3200-144 97-01407-02 515-633 TeO2 200 1.0 10 0.32 x 2.5 Style 4 SMA

3080-122 97-01280-01 780-850 TeO2 80 1.0 25 1.00 x 2.5 Style 2 SMB3200-124 97-01544-01 780-850 TeO2 200 2.0 10 0.32 x 2.5 Style 2 SMB

3080-197 97-02848-01 1047-1060 TeO2 80 1.5 25 1.00 x 2.5 Style 2 SMB3110-197 97-01672-11 1047-1060 TeO2 110 2.5 18 1.25 x 2.5 Style 2 SMB3180-110 97-02159-03 1047-1060 TeO2 180 2.5 11 0.10 x 2.5 Style1 SMB3200-1113 97-02029-05 1047-1060 TeO2 200 2.5 10 0.10 x 2.5 Style 1 SMB

3165-1 97-01287-02 1300-1550 TeO2 165 4.0 12 0.60 x 2.5 Style 1 SMB

Frequency Shifters

3080-125 97-01598-01 442-633 TeO2 80 1.0 25 2.00 x 2.5 Style 2 SMB3100-125 97-03035-01 442-633 TeO2 100 1.1 NA 1.50 x 2.5 Style 2B SMB3200-125 97-03036-01 442-633 TeO2 200 1.1 NA 1.50 x 2.5 Style 2B SMB

US PATENT#5742425

US PATENT#5576880


1.20".45"

Style 5

6-32 X .20" DP(2 Places)

BNC

.094" X 0.25" DP min + .001" - .000"

1.75"

.78".40"

.937"

.125"

.410"

1.25"

.75"1.31"

3 mm

Style 1

SMBSnap On

.127" x 0.15" DP

4-40 X .12" DP(2 Places)

.300" typ.

.61"

1.770"

1.67"

.50"

1.00"

.50"

1.00"

3 mm

Style 2

SMBSnap On

.120" X 0.120" DP

.078" R(4 Places)

+ .001"- .000"

.53".275" typ.

1.00"

.50"

1.75"

2.00"

.125"

.70"

3 mm

Style 2B

SMBSnap On

.120" X 0.120" DP

.078" R(4 Places)

+ .001"- .000"

.53".32" typ.

1.00"

.50"

1.75"

2.00"

.125"

.70"

3 mm

Style 4

0.45"

.88"

SMA

.094" X 0.120" DP

M3 X .12 DP(2 Places)

+ .001" - .000"

.63"

.275" typ.

2.00"

.44" .70"

1.50"

3 mm

Style 3

SMA

.094" X 0.120" DP

4 -40 X .12 DP(2 Places)

+ .001" - .000"

.63"

.275" typ.

2.00"

.88"

.44" .70"

0.45"

1.50"

3 mm

Acousto-Optic Modulators




Multi-Channel Modulators

Beam Rise Wavelength Freq. Diameter Pitch DE Time Crosstalk Model # (nm) Material (MHz) Channels (µm) (µm) (%) (ns) (dB)

220/4 351-364 Crystalline Quartz 220 4 110 900 80 16 253160/8 364 Fused Silica 160 8 180 360 65 21 20220/5 413 Crystalline Quartz 220 5 110 900 75 16 253350/4 442-633 TeO2 350 4 30 2000 70 7 25110/16 488 TeO2 110 16 300 1500 70 70 25110/36 780-815 TeO2 110 36 250 500 80 60 18MC80/5 1064 TeO2 80 5 600 2500 80 140 30AOMC 125/24 351-364 Crystalline Quartz 125 24 375 * 80 23 *3350/6 442-633 TeO2 350 6 175 2500 75 30 25MC300/5 413 Crystalline Quartz 300 5 70 900 50 10 25

* This unit has a customized electrode pattern. Please contact the factory for more information.

Multi-channel AO modulators allow independent modulation of multiple beams of colli-mated light. The input light can be individual beams or a solid sheet. Our designs cover a gamut of wavelength ranges from UV to Near IR. The number of channels ranges from 2 - 36.

Applications■ Photolithography

■ Micro Machining

■ Laser Displays

■ Graphic Printing

US PATENT#6236492


Fiber Coupled Modulators

Polarization Min Rise Extinction On State Contrast Wavelength Freq. RF Power Time Ratio Transmission Ratio Fiber Model # (nm) Material (MHz) (Watts) (ns) (dB) (%) (dB) Type

FC200MHz 1040-1080 TeO2 200 1 - 2.5 10 >20 >40 >40 PM 980FC260MHz 1040-1080 TeO2 260 1 - 2.5 6 >20 >40 >40 PM 980FC165MHz 1530-1570 TeO2 165 2 - 4 15 15 - 20 >30 >50 PM 1550

Crystal Technology’s (CTI) fiber coupled acoustic-optic modulators provide reliable, eco-nomical and hermetically sealed modules for amplitude modulation of laser light. When coupled with a companion driver module from the CTI Model 1000 Series, they provide an easy-to-use combination for a wide variety of applications.

Applications■ Micro Machining

■ Pulse Picking

■ Dopier Frequency Shifting

■ Disc Mastering

Multi-Channel Acousto-Optic Modulators Fiber Coupled Modulator



Acousto-Optic Deflectors

Center Active Acoustic Diff. Scan RF Freq. Freq. Velocity Time Aperture (h x l) Eff. Angle Power Model # λ (nm) (MHz) Mode Material (MHz) mm/µs BW (mm) (%) (mrad) (Watts)

4200-UV 266 200 Longitudinal Fused Silica 135-265 5.960 2300 1.0 x 60.0 40 10.3 3.04100-UV 364 100 Slow Shear TeO2 75-125 0.617 1100 4.0 x 14.0 75 29.5 1.04200-VI 442 200 Off Axis Shear TeO2 150-250 0.710 675 4.8 x 4.8 75 27.7 1.04100-VI 488 100 Slow Shear TeO2 75-125 0.617 1100 4.0 x 14.0 80 39.5 1.24300-VI 488 300 Longitudinal TeO2 200-400 4.200 1200 0.4 x 25.3 40 23.2 2.24080-VI 488-633 80 Off Axis Shear TeO2 55-105 0.656 1000 2.0 x 15.0 80 37.2 1.04080-VR 635 80 Slow Shear TeO2 76-84 0.617 25 2.0 x 2.0 50 8.2 0.34170-IR 660 172.5 Off Axis Shear TeO2 115-130 0.780 800 2.0 x 6.0 50 88.8 2.24055-IR 780-830 52.5 Off Axis Shear TeO2 35-70 0.656 630 2.0 x 12.0 80 44.3 1.54210-IR 830 210 Longitudinal TeO2 140-280 4.200 200 2.0 x 6.0 35 27.6 3.04075-IR 1066-1100 75 Longitudinal TeO2 59-91 4.200 19 2.5 x 2.5 70 8.1 4.0

Applications■ Inspection Systems

■ Graphic Printing

■ Telecom

■ Micro Machining

AO deflectors are specialized designs for high speed scanning applications. Scanning occurs by varying the carrier RF frequency over the specified bandwidth. We have vari-ous designs covering wavelengths in the UV up to Telecom wavelengths in the near IR. Below are representative samples of the many designs we offer.

Acousto-Optic Deflectors




Acousto-Optic Tunable Filters (AOTF)

AO Tunable Filters select specific wavelengths from broadband or multi-line light sources. Crystal Technology owns a portfolio of 20 patents on AOTF design that allow us to offer a wide range of products custom tailored for a multitude of applications.

Applications■ Spectroscopy ■ Fluorescence

■ Microscopy ■ Flow Cytometry

■ Laser Projection/Light Show

■ Supercontinuous Laser Wavelength Selection

Aperture Acceptance Wavelength RF Tuning h x l Resolution Cone Diff. RF PowerPart # (µm) Polarization (MHz) (mm) (nm) (degrees) Eff. (Watts)

97-01776-01 0.405 - 0.7 Linear/ 106 - 225 5 x 5 1.15 @ 0.4 µm ± 2.5 85% 0.40 - 1.2 Random 7.0 @ 0.7 µm

97-02405-01 1.4 - 2.45 Linear/ 52.5 - 95 3 x 5.5 3.5 @ 1.4 µm ± 3.0 80% @ 1.4 µm 3.0 Random 10.0 @ 2.45 µm 45% @ 2.45 µm


Aperture Acceptance Wavelength RF Tuning h x l Resolution Cone Diff. RF PowerPart # (µm) Polarization (MHz) (mm) (nm) (degrees) Eff. (Watts)

PCAOM

97-02837-01 0.35 - 0.43 Linear/Vertical 92 - 132 2.5 x 2.5 1.0 @ 0.39 µm ± 0.1 90% 0.04









CBAOTF

97-02768-01 430 - 690 Linear/Vertical 60 - 115 4 x 4 < 0.60 collimated 90% 15mW

97-02703-04 1530 - 1560 Linear/Horizontal 46 - 47 3 x 3 < 0.70 collimated 90% 50mW

High Precision and Low Power AOTF

Crystal Technology also offers high resolution AOTF devices. Our technology incorporates a reflected acoustic wave that allows for collinear acoustic interaction with the incident optical beam. This patented approach allows for long interactions lengths giving high selectivity at low RF power.

US PATENT#6424451

US PATENT#5909304

US PATENT#4720177

US PATENT#6016216

US PATENT#5329397

US PATENT#4582397



Multi-Channel Direct Digital Synthesizer (DDS)

Frequency Specifications Units 1-Channel 8-Channel 8-Channel HP__

Range MHz 25-160 25-160 25-160Resolution Hz 0.1 0.1 0.1Stability ppm/°C ±2 ±2 ±2Preload Time µs <10 <10 <10Toggle Time ns <20 <20 <20

Amplitude Specifications Units 1-Channel 8-Channel 8-Channel HP__

Output Power, nominal for all channels on Watt 0.2 1.0 3.2Output Power, per channel Watt 0.2 0.125 0.4Modulation Bandwidth MHz >2 >2 >2Dynamic Range dB >40 >30 >30Intermodulation and Spurious dBc >-45 >-45 >-45Signal to Noise Ratio dB >90 >65 >65

Power Input Units 1-Channel 8-Channel 8-Channel HP_ s

AC powered, 19-inch Rack Model Vac NA 100-240 @ 50-60Hz NADC powered, OEM Configuration Vdc — 24 @ 2A 24 @ 2A

Environmental Units 1-Channel 8-Channel 8-Channel HP_ s

Operating temperature °C 10-40 10-40 10-40Size mm — 250 x 200 x 44 250 x 200 x 44

GENERAL FEATURES

1, 8 channels, combined as composite output

On-board composite output power measurement

Independent linear amplitude modulation on each channel

Common blanking signal for all channels

Independent frequency shift modulation on each channel

Wavelength locking / temperature compensation

Our synthesizers offer solutions for laser applications requiring precise frequency tuning and agile control. We offer both single and multi-channel models with an embedded controller that manages bi-directional data between a computer and an acousto-optic device. Our models have multiple communication ports and firmware allowing fre-quency scanning, wavelength locking and temperature compensation.

1-Channel Digital Synthesizer (DDS)

Applications■ Spectroscopy ■ Fluorescence

■ Microscopy ■ Flow Cytometry

■ Laser Projection/Light Show

■ Supercontinuous Laser Wavelength Selection


US PATENT#7580182

US PATENT#7142735


Frequency RF Power Supply Input Output Model # Part # Mod Input (MHz) (Watts) (Volts) Connector Connector ALC

Fixed Frequency Drivers

1080AF-AIF0-1.0 97-03307-52 A 80 1.0 24 SMB SMA Yes1080AF-DIF0-1.0 97-03307-53 D 80 1.0 24 SMB SMA Yes1080AF-AINA-2.5 HCR 97-02910-07 A 80 2.5 24 SMC SMA No1080AF-DINA-2.5 HCR 97-02910-05 D 80 2.5 24 SMC SMA No

1110AF-AIN0-1.0 97-03307-34 A 110 1.0 24 SMB SMA Yes1110AF-AIF0-2.0 97-03307-13 A 110 2.0 28 SMB SMA Yes1110AF-DIF0-2.0 97-03307-14 D 110 2.0 28 SMB SMA Yes1110AF-DINA-2.5 HCR 97-02910-10 D 110 2.5 24 SMC SMA No

1125AF-AIF0-2.0 97-03307-15 A 125 2.0 28 SMB SMA Yes

1165AF-AIF0-4.0 97-03307-55 A 165 4.0 24 SMB SMA Yes1165AF-DIF0-4.0 97-03307-64 D 165 4.0 24 SMB SMA Yes

1200AF-AIF0-1.0 97-03307-27 A 200 1.0 24 SMB SMA Yes1200AF-DIF0-1.0 97-03307-26 D 200 1.0 24 SMB SMA Yes1200AF-DIF0-2.0 97-03307-16 D 200 2.0 28 SMB SMA Yes1200AF-AIF0-2.0 97-03307-18 A 200 2.0 28 SMB SMA Yes1200AF-AINA-2.5 HCR 97-02910-04 A 200 2.5 24 SMC SMA No1200AF-DINA-2.5 HCR 97-02910-01 D 200 2.5 24 SMC SMA No

1260AF-AINA-1.5 HCR 97-02910-06 A 260 1.5 24 SMC SMA No1260AF-DINA-1.5 HCR 97-02910-09 D 260 1.5 24 SMC SMA No

1350AF-AIF0-1.0 97-03307-20 A 350 1.0 24 SMB SMA Yes1350AF-DIF0-1.0 97-03307-11 D 350 1.0 24 SMB SMA Yes1350AF-AINA-1.0 HCR 97-02910-12 A 350 1.0 24 SMC SMA No

Tunable Frequency Drivers

1080AF-AEN0-2.0 97-03307-04 A 50-100 2.0 28 SMB SMA No1110AF-AEF0-1.5 97-03307-23 A 75-150 1.5 28 SMB SMA Yes1200AF-AEF0-1.0 97-03307-17 A 150-280 1.0 24 SMB SMA Yes1200AF-DEF0-1.0 97-03307-28 D 150-280 1.0 24 SMB SMA Yes

Typical Outline Drawing


RF Drivers Specifications

TUNING VOLTAGE

MOD. INPUT RF LEVEL

3.152.65

2.00

1.00 .15

.31 1.25

1.12.56

.06

4.00

3.50

.25 .20

1.00

2.00 1.85

.75

+Vcc

ALC

REF. FREQ.

RF OUTPUT

.26

.81

We offer a multitude of electronic drivers optimized for controlling our AO products. Notably, we have fixed frequency versions for controlling modulators, multi-channel drivers for multi-channel modulators, tunable frequency versions for deflectors and DDS versions for tunable filters.

Applications■ AO Modulation

■ AO Scanning

■ Frequency Shifting

US PATENT#5712722



SALES/DISTRIBUTION: EUROPE

In Germany, Austria, Switzerland, and BeneluxEQ Photonics GmbHObere Hauptstrasse 30/32D-85386 Eching, GermanyTel: 49-89-319-019-23Fax: [email protected]

In the UK and Scandinavia ES Technology, Ltd. Unit H1, Kingston Business Park Kingston Bagpuize Oxfordshire, OX13 5FBTel: +44 (0) 1865-821-818 Fax: +44 (0) [email protected]

In France ES TechnologyZ I la Riviere33850 Leognan, FranceTel: +33 (0) 55 66 44 029Fax: +33 (0) 55 66 44 [email protected]

In ItalydB electronic instruments srl via Teano 2 20161 Milano, ItalyTel: 39-2-6469341/2/3 Fax: 39-2-6456632 [email protected]

SALES/DISTRIBUTION: ASIA

In IsraelNew Technology, S.K. Ltd.11 Tuval Street, 7th FloorRamat Gan 52522, IsraelTel: 972-3679-2000Fax: [email protected]@newtech.co.il

In South KoreaM JL Crystek, Inc.Expotel 1117381 Mannyeon-Dong, Seo-GuTaejon 302-150, KoreaTel: 82-42-471-8070 82-2-807-8070Fax: [email protected]

In ChinaAunion Tech Co., Ltd.Room 2203 Building 1No. 1878 West Zhongshan RoadShanghai 200235, ChinaTel: 86-21-51083793Fax: [email protected]

In Japan: FoR acousTo-oPTIcs

Autex, Inc.Takasago Bldg.16-5, Tomihisa-ChoShinjuku-kuTokyo 162-0067, JapanTel: 81-3-3226-6321Fax: [email protected]

In Japan: FoR cRysTals

Panasonic Corporation Trading Company1-61, Shiromi 2-Chome, Chuo-ku Osaka 540-6255, JapanTel: 81-6-6937-7374Fax: [email protected]

INDEPENDENT AGENTS

In TaiwanSummit-Tech Resource Corp.2F, No. 153, Ziqiang S. Rd.,Jubei, Hsin-Ju, 302, Taiwan, R.O.C.Tel: 886-3-5504151Fax: [email protected]@summit-tech.com.tw

In ChinaPanasonic International Trading Co., Ltd. 16th Floor, HSBC Tower,1000 Lujiazui Ring Road,Pudong New Area,Shanghai, 200120, ChinaTel: 86-21-6841-2589 Fax: [email protected]

In IndiaMacwin IndiaT-5 Pankaj Central MarketIP Extn, Patparganj,Delhi-110092, IndiaTel: +91-11-42175070Fax: +91-11-42175095 [email protected]

CTI representatives and distributors

If you are based outside the U.S., we invite you to contact our authorized representative or distributor in your area as of January 1, 2011. CTI representatives and distributors are:

ISO9001:2008

R E G I S T E R E D

14001 R E G I S T E R E D

ISO


Documents

Standard Products: PPLN Lithium Niobate: Surface Acoustic ... · Standard Products: PPLN Lithium Niobate: Surface Acoustic Wave Integrated Optic Optical Low Pass Filters AO Deflectors