Solar inverters • Chargers STGWA40H65FB • Power factor

12

3

TO-24712

3

TO-3PF

TO-247 long leads1

23

G(1)

C(2, TAB)

E(3)G1C2TE3

Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A• Safe paralleling• Tight parameter distribution• Low thermal resistance

Applications• Welding• Power factor correction• UPS• Solar inverters• Chargers

DescriptionThese devices are IGBTs developed using an advanced proprietary trench gatefield-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.

Product status link

STGFW40H65FB

STGW40H65FB

STGWA40H65FB

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

STGFW40H65FB, STGW40H65FB, STGWA40H65FB

Datasheet

DS9908 - Rev 8 - March 2021For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/applications/industrial-power-and-tools/welding.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS9908

https://www.st.com/en/applications/power-supplies-and-converters/pfc-converter-single-phase-input.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS9908

https://www.st.com/en/applications/power-supplies-and-converters/uninterruptable-power-supplies-ups.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS9908

https://www.st.com/en/applications/energy-generation-and-distribution/solar-inverters-string-and-central.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS9908

https://www.st.com/en/applications/energy-generation-and-distribution/dc-fast-charging-station.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS9908

https://www.st.com/en/product/STGFW40H65FB?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS9908

https://www.st.com/en/product/STGW40H65FB?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS9908

https://www.st.com/en/product/STGWA40H65FB?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS9908

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol ParameterValue

UnitTO-247, TO-247 long leads TO-3PF

VCES Collector-emitter voltage (VGE = 0 V) 650 V

ICContinuous collector current at TC = 25 °C 80

AContinuous collector current at TC = 100 °C 40

ICP (1) Pulsed collector current 160 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation at TC = 25 °C 283 98.6 W

VISO

Insulation withstand voltage (RMS) from all threeleads to external heat sink

(t = 1 s; TC = 25 °C)3.5 kV

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol ParameterValue

UnitTO-247, TO-247 long leads TO-3PF

RthJC Thermal resistance, junction-to-case 0.53 1.52 °C/W

RthJA Thermal resistance, junction-to-ambient 50 °C/W

STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical ratings

DS9908 - Rev 8 page 2/20

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 650 V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 40 A 1.6 2

VVGE = 15 V, IC = 40 A, TJ = 125 °C 1.7

VGE = 15 V, IC = 40 A, TJ = 175 °C 1.8

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics


Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

- 5412 -

pFCoes Output capacitance - 198 -

Cres Reverse transfer capacitance - 107 -

Qg Total gate chargeVCC = 520 V, IC = 40 A, VGE = 0 to 15 V(see Figure 27. Gate charge test circuit)

- 210 -

nCQge Gate-emitter charge - 39 -

Qgc Gate-collector charge - 82 -

STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics

DS9908 - Rev 8 page 3/20

Table 5. Switching characteristics (inductive load)


td(on) Turn-on delay time

VCE = 400 V, IC = 40 A, VGE = 15 V,RG = 5 Ω (see Figure 26. Test circuit forinductive load switching)

- 40 -ns

tr Current rise time - 13 -

(di/dt)on Turn-on current slope - 2413 - A/µs

td(off) Turn-off delay time - 142 -ns

tf Current fall time - 27 -

Eon (1) Turn-on switching energy - 498 -

µJEoff (2) Turn-off switching energy - 363 -

Ets Total switching energy - 861 -

td(on) Turn-on delay time

VCE = 400 V, IC = 40 A, VGE = 15 V,RG = 5 Ω, TJ = 175 °C (seeFigure 26. Test circuit for inductive loadswitching)

- 38 -ns

tr Current rise time - 14 -

(di/dt)on Turn-on current slope - 2186 - A/µs

td(off) Turn-off delay time - 141 -ns

tf Current fall time - 61 -

Eon (1) Turn-on switching energy - 1417 -

µJEoff (2) Turn-off switching energy - 764 -

Ets Total switching energy - 2181 -

1. Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW40H65DFB.2. Including the tail of the collector current.

STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics

DS9908 - Rev 8 page 4/20

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs. case temperature forTO-247 and TO-247 long leads

IGBT230216EWF6GPDT

250

200

150

100

50

00 25 50 75 100 125 150

PTOT (W)

TC (°C)

VGE = 15 V, TJ ≤ 175 °C

Figure 2. Collector current vs. case temperature forTO-247 and TO-247 long leads

IGBT230216EWF6GCCT

80

60

40

20

00 25 50 75 100 125 150

IC (A)

TC (°C)

VGE = 15 V, TJ ≤ 175 °C

Figure 3. Power dissipation vs. case temperature forTO-3PF

GADG250220211536MT

90

60

30

025 75 125 175

PTOT[W]

TC °[C]

VGE = 15 V, TJ ≤ 175 °C

Figure 4. Collector current vs. case temperature forTO-3PF

GADG250220211537MT

40

30

20

10

025 75 125 175

IC[A]

TC [°C]

VGE = 15 V, TJ ≤ 175 °C

Figure 5. Output characteristics (TJ = 25 °C)

IGBT230216EWF6GOC25

140

120

100

80

60

40

20

00 1 2 3 4

IC (A)

VCE (V)

VGE = 15 V13 V

11 V

9 V

Figure 6. Output characteristics (TJ = 175 °C)

IGBT230216EWF6GOC175

140

120

100

80

60

40

20

00 1 2 3 4

IC (A)

VCE (V)

VGE = 15 V

13 V

11 V

9 V

7 V

STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics (curves)

DS9908 - Rev 8 page 5/20

Figure 7. VCE(sat) vs. junction temperature

IGBT230216EWF6GVCET

2.4

2.2

2.0

1.8

1.6

1.4

1.2-75 -25 25 75 125 175

VCE(SAT) (V)

TJ (°C)

VGE = 15 V IC = 80 A

IC = 40 A

IC = 20 A

Figure 8. VCE(sat) vs. collector current

IGBT230216EWF6GVCEC

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.00 10 20 30 40 50 60 70

VCE(SAT) (V)

IC (A)

VGE = 15 VTJ = 175 °C

TJ = 25 °C

TJ = -40 °C

Figure 9. Collector current vs. switching frequency forTO-247 and TO-247 long leads

IGBT230216EWF6GCCS

100

80

60

40

20

010 0 10 1 10 2

IC (A)

f (kHz)

Rectangular current shape(duty cycle = 0.5, VCC = 400 VRG = 5 Ω, VGE = 0/15 V , TJ = 175 °C

TC = 80 °C

TC = 100 °C

Figure 10. Collector current vs. switching frequency forTO-3PF

GADG250220211539MT

50

40

30

10

010 0 10 1 10 2

IC[A]

f (kHz)

Rectangular current shape(duty cycle = 0.5, VCC = 400 V, RG = 5 Ω, VGE= 0/15 V , TJ = 175 °C

TC = 80 ºC

20TC = 100 ºC

Figure 11. Forward bias safe operating area for TO-247and TO-247 long leads

IGBT230216EWF6GFSOA

10 2

10 1

10 0

10 0 10 1 10 2

IC (A)

VCE (V)

single pulse, TC = 25°CTJ ≤ 175 °C, VGE = 15 V

tp = 10 µs

tp = 100 µs

tp = 1 ms

Figure 12. Forward bias safe operating area for TO-3PF

GADG250220211538SOA

10 2

10 1

10 0

10 -1

10 0 10 1 10 2

IC (A)

VCE (V)101

tp =10 µs

tp =100 µs

tp =1 mssingle pulse

TJ≤175 °CTC=25 °C

VGE=15 V


DS9908 - Rev 8 page 6/20

Figure 13. Transfer characteristics

IGBT230216EWF6GTCH

140

120

100

80

60

40

20

06 7 8 9 10

IC (A)

VGE (V)

VCE = 5 V

TJ = 175 °C

TJ = 25 °C

TJ = 25 °C

TJ = 175 °C

Figure 14. Normalized VGE(th) vs. junction temperature

IGBT230216EWF6GNVGE

1.2

1.0

0.8

0.6

0.4-75 -25 25 75 125 175

VGE(th) (Norm.)

TJ (°C)

VCE = VGE , IC = 1 mA

Figure 15. Normalized V(BR)CES vs. junction temperature

IGBT230216EWF6GNVBR

1.12

1.08

1.04

1.00

0.96

0.92

0.88-75 -25 25 75 125 175

V(BR)CES (Norm.)

TJ (°C)

IC = 2 mA

Figure 16. Capacitance variation

IGBT230216EWF6GCVR

10 3

10 2

10 1

10 -1 10 0 10 1 10 2

C (pF)

VCE (V)

CRES

COES

CIES

Figure 17. Gate charge vs. gate-emitter voltage

IGBT230216EWF6GGCGE

15

10

5

00 40 80 120 160 200

VGE (V)

Qg (nC)

VCC = 520 V, IC = 40 A

Figure 18. Switching energy vs. collector current

IGBT230216EWF6GSLC

3000

2400

1800

1200

600

00 10 20 30 40 50 60 70

E (µJ)

IC (A)

VCC = 400 V, RG = 5 ΩVGE = 15 V, TJ = 175 °C

Eoff

Eon


DS9908 - Rev 8 page 7/20

Figure 19. Switching energy vs. gate resistance

IGBT230216EWF6GSLG

2000

1600

1200

800

4000 4 8 12 16 20

E (µJ)

RG (Ω)

VCC = 400 V, IC = 40 AVGE = 15 V, TJ = 175 °C

Eoff

Eon

Figure 20. Switching energy vs. temperature

IGBT230216EWF6GSLT

1200

800

400

0-75 -25 25 75 125 175

E(μJ)

TJ (°C)

VCC = 400 V, IC = 40 ARG = 5 Ω, VGE = 15 V

Eoff

Eon

Figure 21. Switching energy vs. collector emitter voltage

IGBT230216EWF6GSLV

2000

1600

1200

800

400

0150 200 250 300 350 400 450 500

E (µJ)

VCE (V)

IC = 40 A, RG = 5 ΩVGE = 15 V, TJ = 175 °C

Eoff

Eon

Figure 22. Switching times vs. collector current

IGBT230216EWF6GSTC

10 2

10 1

10 00 10 20 30 40 50 60 70

t (ns)

IC (A)

VCC = 400 V, VGE = 15 V RG = 5 Ω, TJ = 175 °C

t d(off)

t d(on)

tr

tf

Figure 23. Switching times vs. gate resistanceIGBT230216EWF6GSTR

10 2

10 10 4 8 12 16 20

t (ns)

RG (Ω)

VCC = 400 V, VGE = 15 V IC = 40 A, TJ = 175 °C

tf

td(off)

tr

td(on)


DS9908 - Rev 8 page 8/20

Figure 24. Thermal impedance for TO-247 and TO-247 long leads

ZthTO2T_A

10-1

10-2

10-5 10-4 10-3 10-2 10-1

K

tp (s)

δ = 0.5

δ = 0.2

δ = 0.1 δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 25. Thermal impedance for TO-3PF

10-5 10-4 10-3 tp(s)10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Single pulse

δ=0.5

10-2

10-1

10

ZthTOF3T_A

Zth = k*RthJCδ = tp/t

tp

t


DS9908 - Rev 8 page 9/20

3 Test circuits

Figure 26. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 27. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 28. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

STGFW40H65FB, STGW40H65FB, STGWA40H65FBTest circuits

DS9908 - Rev 8 page 10/20

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-3PF package information

Figure 29. TO-3PF package outline

7627132_6

STGFW40H65FB, STGW40H65FB, STGWA40H65FBPackage information

DS9908 - Rev 8 page 11/20

https://www.st.com/ecopack

http://www.st.com

Table 6. TO-3PF mechanical data

Dim.mm

Min. Typ. Max.

A 5.30 5.70

C 2.80 3.20

D 3.10 3.50

D1 1.80 2.20

E 0.80 1.10

F 0.65 0.95

F2 1.80 2.20

G 10.30 11.50

G1 5.45

H 15.30 15.70

L 9.80 10.00 10.20

L2 22.80 23.20

L3 26.30 26.70

L4 43.20 44.40

L5 4.30 4.70

L6 24.30 24.70

L7 14.60 15.00

N 1.80 2.20

R 3.80 4.20

Dia 3.40 3.80

STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-3PF package information

DS9908 - Rev 8 page 12/20

4.2 TO-247 package information

Figure 30. TO-247 package outline

aaa

0075325_10

STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-247 package information

DS9908 - Rev 8 page 13/20

Table 7. TO-247 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

ØP 3.55 3.65

ØR 4.50 5.50

S 5.30 5.50 5.70

aaa 0.04 0.10

STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-247 package information

DS9908 - Rev 8 page 14/20

4.3 TO-247 long leads package information

Figure 31. TO-247 long leads package outline

8463846_2_F

STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-247 long leads package information

DS9908 - Rev 8 page 15/20

Table 8. TO-247 long leads package mechanical data

Dim.mm

Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51

A2 1.90 2.00 2.10

b 1.16 1.26

b2 3.25

b3 2.25

c 0.59 0.66

D 20.90 21.00 21.10

E 15.70 15.80 15.90

E2 4.90 5.00 5.10

E3 2.40 2.50 2.60

e 5.34 5.44 5.54

L 19.80 19.92 20.10

L1 4.30

P 3.50 3.60 3.70

Q 5.60 6.00

S 6.05 6.15 6.25

STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-247 long leads package information

DS9908 - Rev 8 page 16/20

5 Ordering information

Table 9. Order codes

Order code Marking Package Packing

STGFW40H65FB GFW40H65FB TO-3PF

TubeSTGW40H65FB GW40H65FB TO-247

STGWA40H65FB GWA40H65FB TO-247 long leads

STGFW40H65FB, STGW40H65FB, STGWA40H65FBOrdering information

DS9908 - Rev 8 page 17/20

Revision history

Table 10. Document revision history

Date Revision Changes

30-Aug-2013 1 Initial release

11-Sep-2013 2 Document status changed from preliminary to production data. Inserted Section 2.1: Electricalcharacteristics (curves).

28-Feb-2014 3 Updated title and description in cover page.

05-Mar-2014 4 Updated units in Table 6: Switching characteristics (inductive load).

11-Apr-2014 5 Added part number and references for the device in a TO-3PF package.

03-Nov-2016 6

Added device in TO-247 long leads and updated the document accordingly.

Updated Section 2.1: Electrical characteristics (curves) and Section 4.3: TO-247 long leads,package information.

Minor text changes.

21-Mar-2017 7

Updated Table 1: "Device summary".

Added Figure 26: "Thermal impedance for TO-3PF".

Minor text changes

09-Mar-2021 8

The part number STGWT40H65FB has been removed and the document has been updatedaccordingly.

Updated title in cover page.

Updated Section 1 Electrical ratings and Section 2.1 Electrical characteristics (curves).

Minor text changes


DS9908 - Rev 8 page 18/20

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

STGFW40H65FB, STGW40H65FB, STGWA40H65FBContents

DS9908 - Rev 8 page 19/20

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2021 STMicroelectronics – All rights reserved


DS9908 - Rev 8 page 20/20

http://www.st.com/trademarks

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