PROCEEDINGS OF SPIE ... PROCEEDINGS OF SPIE Volume 9425 Proceedings of SPIE 0277-786X, V. 9425 SPIE

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  • PROCEEDINGS OF SPIE

    SPIEDigitalLibrary.org/conference-proceedings-of-spie

    Front Matter: Volume 9425

    , "Front Matter: Volume 9425," Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942501 (20 March 2015); doi: 10.1117/12.2193847

    Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

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  • PROCEEDINGS OF SPIE

    Volume 9425

    Proceedings of SPIE 0277-786X, V. 9425

    SPIE is an international society advancing an interdisciplinary approach to the science and application of light.

    Advances in Patterning Materials and Processes XXXII Thomas I. Wallow Christoph K. Hohle Editors 23–26 February 2015 San Jose, California, United States Sponsored by SPIE Cosponsored by Tokyo Ohka Kogyo America, Inc. (United States) Published by SPIE

    Advances in Patterning Materials and Processes XXXII, edited by Thomas I. Wallow, Christoph K. Hohle, Proc. of SPIE Vol. 9425, 942501 · © 2015 SPIE

    CCC code: 0277-786X/15/$18 · doi: 10.1117/12.2193847

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  • The papers included in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon. Please use the following format to cite material from this book: Author(s), "Title of Paper," in Advances in Patterning Materials and Processes XXXII, edited by Thomas I. Wallow, Christoph K. Hohle, Proceedings of SPIE Vol. 9425 (SPIE, Bellingham, WA, 2015) Article CID Number. ISSN: 0277-786X ISBN: 9781628415278 Published by SPIE P.O. Box 10, Bellingham, Washington 98227-0010 USA Telephone +1 360 676 3290 (Pacific Time)· Fax +1 360 647 1445 SPIE.org Copyright © 2015, Society of Photo-Optical Instrumentation Engineers. Copying of material in this book for internal or personal use, or for the internal or personal use of specific clients, beyond the fair use provisions granted by the U.S. Copyright Law is authorized by SPIE subject to payment of copying fees. The Transactional Reporting Service base fee for this volume is $18.00 per article (or portion thereof), which should be paid directly to the Copyright Clearance Center (CCC), 222 Rosewood Drive, Danvers, MA 01923. Payment may also be made electronically through CCC Online at copyright.com. Other copying for republication, resale, advertising or promotion, or any form of systematic or multiple reproduction of any material in this book is prohibited except with permission in writing from the publisher. The CCC fee code is 0277-786X/15/$18.00. Printed in the United States of America. Publication of record for individual papers is online in the SPIE Digital Library.

    SPIEDigitalLibrary.org

    Paper Numbering: Proceedings of SPIE follow an e-First publication model, with papers published first online and then in print. Papers are published as they are submitted and meet publication criteria. A unique citation identifier (CID) number is assigned to each article at the time of the first publication. Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online, print, and electronic versions of the publication. SPIE uses a six-digit CID article numbering system in which:

    The first four digits correspond to the SPIE volume number. The last two digits indicate publication order within the volume using a Base 36 numbering

    system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B … 0Z, followed by 10-1Z, 20-2Z, etc.

    The CID Number appears on each page of the manuscript. The complete citation is used on the first page, and an abbreviated version on subsequent pages.

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  • Contents

    ix Authors

    xiii Conference Committee

    SESSION 1 KEYNOTE SESSION

    9425 02 Recent progress on multipatterning: approach to pattern placement correction

    (Keynote Paper) [9425-1]

    SESSION 2 EUV RESIST EXTENDABILITY: JOINT SESSION WITH CONFERENCES 9422 AND 9425

    9425 04 Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular

    resist platform for EUV lithography [9425-3]

    9425 05 Recent progress of negative-tone imaging with EUV exposure [9425-4]

    SESSION 3 EUV RESIST MECHANISTIC STUDIES: JOINT SESSION WITH CONFERENCES 9422 AND 9425

    9425 06 The effect of resist dissolution process on pattern formation variability: an in situ analysis

    using high-speed atomic force microscopy [9425-5]

    9425 07 XAS photoresists electron/quantum yields study with synchrotron light [9425-6]

    9425 08 Inhomogeneity of PAGs in a hybrid-type EUV resist system studied by molecular-dynamics

    simulations for EUV lithography [9425-7]

    SESSION 4 NEGATIVE TONE MATERIALS

    9425 09 Advanced patterning approaches based on Negative Tone Development (NTD) process

    for further extension of 193nm immersion lithography [9425-8]

    9425 0A Optimizing performance in cross-linking negative-tone molecular resists [9425-9]

    9425 0B Process variation challenges and resolution in the negative tone develop double

    patterning for 20nm and below technology node [9425-10]

    9425 0C Effect of molecular resist structure on glass transition temperature and lithographic

    performance in epoxide functionalized negative tone resists [9425-12]

    iii

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  • SESSION 5 RESIST AND PROCESS FUNDAMENTALS

    9425 0D Total fidelity management in self-aligned multiple patterning process [9425-13]

    9425 0E Tailored molecular glass resists for scanning probe lithography [9425-14]

    9425 0F Effects of the statistical fluctuation of PAG and quencher concentration on LWR of ArF resists

    [9425-15]

    9425 0G Fundamental study of spin-coating using in-situ analysis and simulation [9425-16]

    9425 0I Revealing beam-induced chemistry using modulus mapping in negative-tone

    EUV/e-beam resists with and without cross-linker additives [9425-18]

    SESSION 6 PATTERNING MATERIALS AND ETCH: JOINT SESSION WITH CONFERENCES 9425 AND 9428

    9425 0J Understanding the efficacy of linewidth roughness post-processing (Invited Paper)

    [9425-19]

    SESSION 7 MATERIALS AND ETCH IN EMERGING TECHNOLOGIES: JOINT SESSION WITH CONFERENCES

    9425 AND 9428

    9425 0K Influence of etch process on contact hole local critical dimension uniformity in extreme

    ultraviolet lithography [9425-20]

    9425 0L Organic hard masks utilizing fullerene derivatives [9425-21]

    9425 0N Impact of sequential infiltration synthesis on pattern fidelity of DSA lines [9425-23]

    SESSION 8 DSA MATERIALS AND PROCESSES I: JOINT SESSION WITH CONFERENCES 9425 AND 9423

    9425 0O Material readiness for generation 2 Directed Self-Assembly (DSA) < 24nm pitch [9425-24]

    9425 0P Directed self-assembly of topcoat-free, integration-friendly high-x block copolymers

    [9425-25]

    SESSION 9 DSA MATERIALS AND PROCESSES II: JOINT SESSION WITH CONFERENCES 9425 AND 9423

    9425 0Q Driving DSA into volume manufacturing [9425-26]

    9425 0R Directed self-assembly process integration: fin patterning approaches and challenges

    [9425-27]

    iv

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  • SESSION 10 EUV RESISTS AND PROCESSES

    9425 0S Integrated fab process for metal oxide EUV photoresist [9425-29]

    9425 0T High-sensitivity molecular organometallic resist for EUV (MORE) [9425-30]

    9425 0U Development of EUV chemically amplified resist which has novel protecting group

    [9425-31]

    SESSION 11 DSA MATERIALS AND NEW CONCEPTS

    9425 0W The role of guide stripe chemistry in block copolymer directed self-assembly [9425-33]

    9425 0X Patterning sub-25nm half-pitch hexagonal arrays of contact holes with chemo-epitaxial

    DSA guided by ArFi pre-patterns [9425-34]

    9425 0Y DSA graphoepitaxy calibrations for contact hole multiplication [9425-35]

    9425 0Z Development and integration of systems with enhanced resolutions based on Si-containing

    block copolymers for line