15
Journal of Electronic Materials, VoL 12, No. 3, 1983 LOW TEMPERATURE ALUMINUMOXIDE DEPOSITION USING TRIMETffILALUMINUM R.S. Ehle, B.J. Baliga, and W. Katz General Electric Company Corporate Research and Development Center Schenectady, NY 12345 (Received September 30, 1982) Abstract Aluminum oxide films (amorphous and 7-A1203) have been deposited by the oxidation of trimethylaluminum. Process parameters have been evaluated and optimized to obtain reasonable growth rates and film properties for deposition temperatures between 300 and 400-C. Values of the dielectric constant (7.5 - 7.8), the dielectric strength (7.5 - 7.9 X 10 v V/cm), the iq~ex of refraction (1.54 - 1.67), and the resistivity (> 10 "~ ohm--cm) compare favorably with AI_O_ films grown with other processes at higher z deposition temperatures. Film analysis by secondary ion mass spectrometry identified a distribution of carbon and sodium impurities. Key Words: aluminum oxide, chemical vapor deposition, low temperature. 587 0361-5235/83/1203 58753.00 1983 A[ME

Low temperature aluminum oxide deposition using trimethylaluminum

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Page 1: Low temperature aluminum oxide deposition using trimethylaluminum

Journal o f Electronic Materials, VoL 12, No. 3, 1983

LOW TEMPERATURE ALUMINUM OXIDE DEPOSITION

USING TRIMETffILALUMINUM

R.S . E h l e , B . J . B a l i g a , and W. Katz

Genera l E l e c t r i c Company Corpo ra t e Resea rch and Development Cente r

S c h e n e c t a d y , NY 12345

(Received September 30, 1982)

A b s t r a c t

Aluminum oxide f i l m s (amorphous and 7-A1203) have been d e p o s i t e d by the o x i d a t i o n of t r i m e t h y l a l u m i n u m . P r o c e s s p a r a m e t e r s have been e v a l u a t e d and o p t i m i z e d t o o b t a i n r e a s o n a b l e growth r a t e s and f i l m p r o p e r t i e s f o r d e p o s i t i o n t e m p e r a t u r e s between 300 and 400-C. Values of the d i e l e c t r i c c o n s t a n t (7 .5 - 7 . 8 ) , the d i e l e c t r i c s t r e n g t h (7 .5 - 7 .9 X 10 v V/cm), the iq~ex of r e f r a c t i o n (1 .54 - 1 . 6 7 ) , and the r e s i s t i v i t y (> 10 "~ ohm--cm) compare f a v o r a b l y wi th AI_O_ f i l m s grown wi th o t h e r p r o c e s s e s a t h i g h e r z d e p o s i t i o n t e m p e r a t u r e s . Fi lm a n a l y s i s by s e c o n d a r y ion mass s p e c t r o m e t r y i d e n t i f i e d a d i s t r i b u t i o n of ca rbon and sodium i m p u r i t i e s .

Key Words: aluminum ox ide , chemica l vapor d e p o s i t i o n , low t e m p e r a t u r e .

587

0361-5235/83/1203 58753.00 �9 1983 A[ME

Page 2: Low temperature aluminum oxide deposition using trimethylaluminum

588 Ehle, Bsdiga and Kstz

I n t r o d u c t i o n

Aluminum oxide f i l m s have been employed in s e m i c o n d u c t o r d e v i c e a p p l i c a t i o n s as I n t c r m c t a l d i e l e c t r l c s f o r s i l i c o n i n t e g r a t e d c i r c u i t s , p a s s i v a t i o n d l e l c c t r l c s f o r GaAs, and d i e l e c t r i c s f o r GaAs MIS s t r u c t u r e s w i th r e p o r t e d i n v e r s i o n a t the i n t e r f a c e ( I ) . The chemlca l vapor d e p o s i t i o n (CVD) t e c h n i q u e s which have been deve loped f o r d e p o s i t i o n have i n c l u d e d the r e a c t i o n o f t r l m c t h y l a l u m i n n m (TMA1) wi th n i t r o u s oxide ( 2 ) , the gas phase h y d r o l y s i s o f AIC1. wi th a m i x t u r e of H 2 and CO (3) the p y r o l y t i c d e c o m p o s i t i o n o f aluminum a l~ox ide (4~, and ' the o x i d a t i o n o f TMA1 ( 5 ) . D e t a i l s o f the p h y s i c a l and chemica l p r o c e s s e s and the f i l m p r o p e r t i e s have been r e p o r t e d in t h e s e p u b l i c a t i o n s f o r d e p o s i t i o n t e m p e r a t u r e s in e x c e s s o f 400~ However, the l i t e r a t u r e c o n t a i n s l e s s d e t a i l e d i n f o r m a t i o n p e r t a i n i n g t o the d e p o s i t i o n o f f i l m s a t t e m p e r a t u r e s below 400~

In the p r e s e n t work we have d e p o s i t e d A1203 f i l m s by the o x i d a t i o n o f TMAI in an a rgon a tmosphe re . The p r o c e s s i s s i m i l a r to t h a t r e p o r t e d by l )uffy and Kern ( 5 ) . The scope of our i n v e s t i g a t i o n was l i m i t e d by the t e c h n o l o g i c a l r e q u i r e m e n t s o f a program which n e c e s s i t a t e d the low t e m p e r a t u r e d e p o s i t i o n o f At.O_ on GaAs. A c c o r d i n g l y we

z have i n v e s t i g a t e d p r o c e s s p a r a m e t e r s e f f e c t l n g the d e p o s i t i o n a t t e m p e r a t u r e s between 300~ and 400oC. Fi lm p r o p e r t i e s i n c l u d i n g the index of r e f r a c t i o n , the d i e l e c t r i c c o n s t a n t , the d i e l e c t r i c s t r e n g t h , the s t r u c t u r e , the r e s i s t i v i t y , and the i m p u r i t y c o n t e n t and d i s t r i b u t i o n have been d e t e r m i n e d .

Expe r imen t a l

A schemat i c o f the CVI) a p p a r a t u s employed d u r i n g the s t u d y i s shown in F i g u r e i and i s b a s i c a l l y a v e r t i c a l open tube system wi th the gas f low p e r p e n d i c u l a r to the s u b s t r a t e . The 0 .05 ohm-am p - t y p e s i l l c o n s u b s t r a t e s used were s u p p o r t e d by a 7 .6 ca d i a m e t e r g r a p h i t e r e s i s t a n c e h e a t e r housed in a 15 cm d i a m e t e r 30 cm h igh b e l l j a r . The TNAI was i n t r o d u c e d i n t o the r e a c t i o n chamber wi th an a rgon a s s i s t c a r r i e r gas by p a s s i n g a rgon t h r o u g h the TNA1 c o n t a i n e r which was h e l d a t a c o n s t a n t t e m p e r a t u r e of 20~ Th is m i x t u r e was coup led t o the main a rgon f low which e n t e r e d the r e a c t i o n chamber t h rough a funne l employed t o

Page 3: Low temperature aluminum oxide deposition using trimethylaluminum

Low Temperature Aluminum Oxide Deposition

02 ~ F L O W CONTROLLER

589

Ar MAIN

Ar

ArASSIST~M~(~)

/ \

! !

.SUBSTRATE HEATER

EXHAUST

F i g u r e 1 : CVD a p p a r a t u s o f d e p o s i t i o n o f AI203 b y t h e o x i d a t i o n o f t r i m e t h y l a l u m i n u m .

mix t h e r e a c t a n t g a s e s a t t h e s u r f a c e o f t h e s u b s t r a t e and m i n i m i z e c o m p e t i n g g a s p h a s e r e a c t i o n s w h i c h one m i g h t e x p e c t w i t h a more h o m o g e n e o u s m i x t u r e w i t h i n t h e r e a c t i o n c h a m b e r . The o x y g e n was i n t r o d u c e d i n t o t h e r e a c t i o n c h a m b e r t h r o u g h a s e p a r a t e l i n e l o c a t e d a t t h e s i d e o f t h e b e l l j a r b e t w e e n t h e o u t p u t o f t h e f u n n e l and t h e t o p o f t h e s u b s t r a t e h e a t e r . The r e a c t i o n c h a m b e r was f l u s h e d w i t h a r g o n f o r t h i r t y m i n u t e s a f t e r s u b s t r a t e l o a d i n g p r i o r t o e a c h d e p o s i t i o n . A f t e r t h e s u b s t r a t e was h e a t e d t o t h e d e s i r e d d e p o s i t i o n t e m p e r a t u r e t h e a r g o n f l o w t h r o u g h t h e TMA1 b u b b l e r [TMAI(Ar ) ] was s t a r t e d t h i r t y s e c o n d s p r i o r t o i n t r o d u c t i o n o f t h e o x y g e n . The g r o w t h r a t e s we re c a l c u l a t e d a s s u m i n g t h a t g r o w t h was i n i t i a t e d a t t h e p o i n t when o x y g e n was i n t r o d u c e d .

Page 4: Low temperature aluminum oxide deposition using trimethylaluminum

590 Ehle, Baliga and Katz

P r o c e s s p a r a m e t e r s w h i c h w e r e h e l d c o n s t a n t t h r o u g h o u t t h e e x p e r i m e n t s w e r e t h e m a i n a r g o n f l o w r a t e ( 1 . 4 I / m l n ) , t h e a r g o n a s s i s t f l o w r a t e (80 c c / m l n ) and t h e d i s t a n c e b e t w e e n t h e f u n n e l o u t l e t and t h e s u b s t r a t e s u r f a c e (5 cm) . T h i s f u n n e l h e i g h t was i n i t i a l l y d e t e r m i n e d b y a d j u s t m e n t w h i c h p r o v i d e d u n i f o r m c l r c u l a r g r o w t h a p p r o x i m a t e l y 4 . 6 cm i n d i a m e t e r w i t h TMAI(Ar) and o x y g e n f l o w r a t e s o f 20 c c / m l n and 50 c c / m i n , r e s p e c t i v e l y , and a s u b s t r a t e t e m p e r a t u r e o f 370~ G i v e n t h e f i x e d c o n d i t i o n s m e n t i o n e d a b o v e , t h e p a r a m e t e r s w h i c h e f f e c t t h e c h e m i c a l r e a c t i o n d u r i n g d e p o s i t i o n a r e t h e c o n c e n t r a t i o n s o f o x y g e n and TMAI, and t h e t e m p e r a t u r e o f t h e s u b s t r a t e . The o x y g e n and TMAI(Ar) f l o w r a t e s w e r e v a r i e d f rom $ t o 140 c c / m i n and 1 . 8 t o 50 c c / m l n r e s p e c t i v e l y , and d e p o s i t i o n t e m p e r a t u r e s r a n g e d b e t w e e n 300 and 4 0 0 - C .

The t h i c k n e s s and i n d e x o f r e f r a c t i o n w e r e m e a s u r e d w i t h a R u d o l p h a u t o EL I I e l l i p s o m e t e r (~ = 6328 ~) and n o r m a l l y e x h i b i t e d u n i f o r m i t i e s o f 10& and 1 5 , r e s p e c t i v e l ~ . The f i l m t h i c k n e s s was n o r m a l l y b e t w e e n 1500 and 2000 A. Aluminum d o t s 0 . 2 5 mm i n d i a m e t e r we re e v a p o r a t e d on t h e f i l m s and a u n i f o r m A1 e v a p o r a t i o n was c o m p l e t e d on t h e r e v e r s e s i d e o f t h e s u b s t r a t e t o fo rm MOS s t r u c t u r e s . The d i e l e c t r i c s t r e n g t h and c a p a c i t a n c e w e r e m e a s u r e d w i t h t h e s e u n i t s . The d i e l e c t r i c c o n s t a n t was c a l c u l a t e d f rom t h e c a p a c i t a n c e and f i l m t h i c k n e s s .

F i l m s t r u c t u r e was e v a l u a t e d u s i n g t r a n s m i s s i o n e l e c t r o n m i c r o s c o p y (TEM) and low a n g l e X - r a y d i f f r a c t i o n . I m p u r i t i e s p r e s e n t and t h e i r d i s t r i b u t i o n w i t h i n t h e f i l m s w e r e d e t e r m i n e d u s i n g s e c o n d a r y i o n mass s p e c t r o m e t r y (SIMS).

R e s u l t s

D e p o s i t i o n R a t e

The c h e m i c a l r e a c t i o n d u r i n g t h e d e p o s i t i o n o f A1203 b y t h e o x i d a t i o n o f TMA1 m i g h t be e x p e c t e d t o p r o c e e d a s

2(C!t3) 3 A1 + 1202 --.-) A1203 + 6C02 + 9IL20

o r

(i)

Page 5: Low temperature aluminum oxide deposition using trimethylaluminum

Low Temperature Aluminum Oxide Deposition 591

4(CH3) 3 AI + 1502 -9 2A1203 + 12CO 2 + ISB I (2)

E i t h e r of t h e s e e q u a t i o n s i n d i c a t e t h a t t he oxygen t o TMAI mole r a t i o must be l a r g e t o o b t a i n c o m p l e t e o x i d a t i o n of t he TMA1. The dependence of the growth r a t e on the oxygen c o n c e n t r a t i o n a t a t e m p e r a t u r e of 350~ w i t h a TMAI(Ar) f low of 20 c c / m i n i s shown i n F i g u r e 2. As would be e x p e c t e d , t h e r e i s a r e l a t i v e l y s t r o n g dependence on the oxygen f low r a t e s i m i l a r to t h a t o b s e r v e d i n o t h e r o x i d e d e p o s i t i o n s y s t e m s ( 7 , 1 0 , 1 1 ) . Th i s i s a t t r i b u t e d t o t he i n c r e a s i n g oxygen a d s o r p t i o n on the r e a c t i o n s u r f a c e which p r o m o t e s f a s t e r r e a c t i o n . F i l m s d e p o s i t e d w i t h f low r a t e s l e s s t han 30 c c / m i n e x h i b i t e d poo r e l e c t r i c a l c h a r a c t e r i s t i c s and f o r f low r a t e s g r e a t e r t han 140 c c / m i n the d e p o s i t i o n became nonun i fo rm and i r r e p r o d u c i b l e .

4oo I .~ 300

t~l

2oo

~lO0

TMA[ (Ar ) = 20cc/min T = 350~

I I

{ELECT ~ I

OF. ' ] I J j I l I 0 20 40 60 80 IO0 120 140 160

OXYGEN FLOW RATE (cc/min)

F i g u r e 2 : Dependence of growth r a t e on t h e oxygen f low r a t e .

Page 6: Low temperature aluminum oxide deposition using trimethylaluminum

592 Ehle , Ba l iga a n d Katz

E q u a t i o n s (1) and (2) p r e d i c t t h a t the oxygen c o n c e n t r a t i o n must be i n c r e a s e d by a f a c t o r of 12 and 7 . 5 , r e s p e c t i v e l y , t o doub le the A1.O. f o r m a t i o n . To a s c e r t a i n z ~ the r e a c t i o n t h a t a p p l i e s t o our d e p o s i t i o n s , a p l o t of the same growth r a t e da t a as a f u n c t i o n of the 7 . S t h and the 12 t h r o o t of the oxygen f low was made. The p l o t shown in F i g u r e 3 u s ing the 7 . S t h r o o t g i v e s a s t r a i s h t l i n e . Th i s i s good e v i d e n c e t h a t the d e p o s i t i o n p r o c e e d s a c c o r d i n g t o the chemica l r e a c t i o n p r e d i c t e d by E q u a t i o n ( 2 ) .

~ TMAi(Ar ) : 20cc/min T =550~

_3OO _

~ 200 �9

- / /

- f

0 / I I t I I 1 I I I I 1.0 h5 2.0

7"5t/OXYGEN FLOW RATE (cc/min)

F i s u r e 3: Growth r a t e p l o t t e d as t he 7 . S t h r o o t of oxygen f low r a t e .

Page 7: Low temperature aluminum oxide deposition using trimethylaluminum

Low Temperature Aluminum Oxide Deposition 593

6 0 0 - 5 0 0 -

A 4 0 0 - r162

. m

3 0 0 -

,1, 2 0 0 - I-- ,r162 I :E

-e- l - am I 0 0 - - 0 "" 8 0 -

6 0 - 5 0 -

4 0 1.45

DEPOSITION TEMPERATURE ( ~

4 0 0 5 5 0 5 0 0 I I

TMAJ. (Ar) : 20cc/min e ~ 2 = 50cc/min

20.5 KCAL mole "1

I 1 I I 1.5 1.55 1.6 1.65

I O 0 0 / T OK

I 1.7 1.75

F i g u r e 4 : A r r h e n i u s p l o t of t he dependence of the growth r a t e on t h e s u b s t r a t e t e m p e r a t u r e .

An A r r h e n i u s p l o t of the 8rowth r a t e v e r s u s t e m p e r a t u r e i s shown i n F i g u r e 4 f o r g rowth t e m p e r a t u r e s be tween 300 and 400~ The a c t i v a t i o n e n e r g y d e r i v e d from the s l o p e i s 20 .5 k c a l / m o l e . At t e m p e r a t u r e s above 400~ t h e d e p o s i t i o n p r o c e s s becomes u n s t a b l e r e s u l t l n g i n nonun i f o r m f i l m s . In a d d i t i o n the growth r a t e d e c r e a s e s a t h l s h e r t e m p e r a t u r e s and becomes i r r e p r o d u e l b l e . Growth r a t e r e d u c t i o n as t he t e m p e r a t u r e i s i n c r e a s e d has been o b s e r v e d i n o t h e r CVD p r o c e s s e s ( 6 , 7 ) , and I s p r o b a b l y the r e s u l t of an i n c r e a s e i n t h e homogeneous gas phase c h e m i c a l r e a c t i o n o c c u r r i n 8 a t t he e l e v a t e d chamber t e m p e r a t u r e s . Th i s c a u s e s a d e p l e t i o n of r e a c t a n t s a t t he w a f e r s u r f a c e when the t e m p e r a t u r e in t he chamber i n c r e a s e s and r e s u l t s in a d rop i n t he growth r a t e b e c a u s e a h e t e r o g e n e o u s r e a c t i o n i s r e s p o n s i b l e f o r

Page 8: Low temperature aluminum oxide deposition using trimethylaluminum

594 Ehle, Baliga and Katz

f i l m growth on the w a f e r s . Our da t a shows t h a t growth r a t e s above I00 ~ pe r min can be a c h i e v e d in the s t a b l e growth r e g i o n a t t e m p e r a t u r e s below 350~ In compar i son , growth r a t e s r e s u l t i n g from AI203 d e p o s i t i o n s by the gas phase h y d r o l y s i s of AIClz ( 3 ) , and the p y r o l y t i c d e c o m p o s i t i o n o f aluminum a l k o x i d e - (4 ) a re nea r I00 ~/min a t 900~ and 70 ~/min a t 420~ r e s p e c t i v e l y . Duffy and Kern (5) o b s e r v e d growth r a t e s o f 500 ~/min a t a d e p o s i t i o n t e m p e r a t u r e of 420~

Exper iments were a l s o conduc t ed t o de t e rmine the dependence of the growth r a t e up on the TMAI(Ar) f low r a t e a t 350eC u s i n g an oxygen f low of 100 cc /min . I t was found t h a t v a r i a t i o n of the TMAI(Ar) f low r e s u l t e d in changes o f the d e p o s i t i o n a rea (wi th a un i fo rm growth r e g i o n w i t h i n t h i s a r ea ) i n s t e a d o f an e x p e c t e d change in growth r a t e w i t h un i fo rm d e p o s i t i o n . These e f f e c t s can be obse rved in F i g u r e 5, which shows p h o t o g r a p h s of the s u b s t r a t e s w i th AI~03 d e p o s i t e d u s i n g v a r i o u s f l o w s . The d e p o s i t i o n r e s u l t i n g from a f low of 1 .8 cc /min i s shown in the lower r i g h t hand c o r n e r . The a rea of d e p o s i t i o n i s l e s s than 0 .8 cm . With i n c r e a s i n g f low, p i c t u r e d in a c lockwi se d i r e c t i o n , the d e p o s i t i o n a rea and un i fo rm r e g i o n w i t h i n t h i s a r ea i n c r e a s e s u n t i l a t a f low ra t~ of 20 cc /min t h e r e i s a un i fo rm d e p o s i t i o n a rea of 16 cm . These un i fo rm d e p o s i t i o n

F i g u r e 5: P h o t o g r a p h s o f Al~Oq f i l m s d e p o s i t e d on 2 inch s u b s t r a t e s u s ing TM~I(Ar) few r a t e s o f 1 , 8 , 4 , 10 , 15 , 20 , and 50 cc /min p i c t u r e d c l o c k w i s e from lower r i g h t .

Page 9: Low temperature aluminum oxide deposition using trimethylaluminum

Low Temperature Aluminum Oxide Deposition 595

4.0

E

"-3.0 W l - - laJ

~- 2.0 Z 0 l,-- I ,o o 1.0 IJJ

0

~ TMAJLIAr) cc/min

- 2 . 0

1 10 I

~ - - . . " I I 1 I I I I

DIAMETER (Icm/DIV)

0 i [ , I l [ J I

I0 20 30 40 TMA,(L(Ar) FLOW RATE (cc/min)

F i g u r e 6: Dependence of d e p o s i t i o n d i a m e t e r and f i l m t h i c k n e s s on t h e TNAL(Ar) f low r a t e .

c h a r a c t e r i s t i c s a r e o b s e r v e d w i t h f l ow r a t e s up t o 40 c c / m i n . Growth t h e n becomes n o n u n i f o r m when t he f l ow i s i n c r e a s e d f u r t h e r . The same phenomenon i s shown i n F i g u r e 6 where t he d i a m e t e r o f t h e u n i f o r m d e p o s i t i o n a r e a i s p l o t t e d as a f u n c t i o n of t h e TMAI(Ar) f l ow r a t e . The g e n e r a l t h i c k n e s s v a r i a t i o n s w i t h i n t h i s d i a m e t e r a r e shown f o r s e v e r a l f l ow r a t e s I n t h e i n s e r t . The a r r o w i n t h e i n s e r t shows t h e l o c a t i o n o f t h e f u n n e l . For c o n s t a n t d e p o s i t i o n t i m e s , as t h e f l o w i s i n c r e a s e d , t he t h i c k n e s s i n t h e u n i f o r m d e p o s i t i o n r e g i o n r e m a i n s c o n s t a n t and t h e d i a m e t e r i n c r e a s e s . Based upon t h e d a t a shown I n F i g u r e 4 , we b e l i e v e t h a t t he d e p o s i t i o n r a t e i n t h e u n i f o r m t h i c k n e s s r e g i o n i s k l n e t l c a l l y l i m l t e d . As t h e r e a c t a n t s f l ow t o w a r d s t h e edges o f t h e w a f e r t he TNA1 c o n c e n t r a t i o n I s

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596 Ehle, BaHga and Kstz

d i l u t e d and t h e r e a c t i o n becomes mass f low c o n t r o l l e d . T h i s r e s u l t s in a r e d u c t i o n o f t he growth r a t e a s t h e p e r i m e t e r of t he d e p o s i t i o n r e g i o n i s a p p r o a c h e d . When the f low i s i n c r e a s e d , t he h i g h e r f l u x can s u p p o r t a k i n e t i c a l l y c o n t r o l l e d r e a c t i o n o v e r more of the s u b s t r a t e a r e a b e f o r e i t i s d i l u t e d t o t he l e v e l a t which the r e a c t i o n becomes mass f l ow c o n t r o l l e d . T h i s r e s u l t s i n t he o b s e r v e d i n c r e a s e i n a r e a .

F i l m P r o p e r t i e s

The s t r u c t u r a l a n a l y s e s by TEM and low a n g l e X - r a y d i f f r a c t i o n showed t h a t some f i l m s were amorphous and i n o t h e r s t h e p o l y c r y s t a l i n e Y - A1203 phase was p r e s e n t . The u phase was more p r e d o m i n a n t w l t h f i l m s d e p o s i t e d a t t he h i g h e r d e p o s i t i o n t e m p e r a t u r e p r o v i d i n g oxygen f low r a t e s d u r i n g the d e p o s i t i o n were g r e a t e r t han 30 c c / m i n . Amorphous f i l m s were e v i d e n t a t a l l d e p o s i t i o n t e m p e r a t u r e s when oxygen c o n c e n t r a t i o n s were l o w e r .

The i n d e x of r e f r a c t i o n i s p l o t t e d as a f u n c t i o n o f t e m p e r a t u r e and oxygen f low r a t e s i n F i g u r e 7 and 8 r e s p e c t i v e l y f o r 1800 and 2000 ~ t h i c k f i l m s . No t r e n d i n t h e i n d e x was o b s e r v e d w i t h t h i c k n e s s v a r i a t i o n i n t h i s r a n g e . A p r o g r e s s i v e i n c r e a s e i n t h e r e f r a c t i v e i n d e x i s o b s e r v e d w i t h i n c r e a s i n g d e p o s i t i o n t e m p e r a t u r e s . The h i g h e r i n d e x of r e f r a c t i o n w i t h i n c r e a s i n g d e p o s i t i o n t e m p e r a t u r e i s p r o b a b l y due t o a c o r r e s p o n d i n g change i n t he m i c r o s t r u c t u r e of the f i l m s from the amorphous t o t he p o l y c r y s t a l l i n e y phase which was o b s e r v e d i n t h e s t r u c t u r a l a n a l y s i s . The i n d e x i s s i g n i f i c a n t l y l ower t han t h a t r e p o r t e d f o r pu re a and y A1~O3 ( 8 , 9 ) . However , t h e i n d e x f o r f i l m s d e p o s i t e d n e a r 370 C compare v e r y f a v o r a b l y w i t h t h o s e r e p o r t e d f o r o t h e r CVD d e p o s i t i o n p r o c e s s e s . The d a t a p o i n t of Aboaf r e s u l t i n g from t h e d e p o s i t i o n of AI20 ~ by the d e c o m p o s i t i o n o f a l m a i m m t r i i s o p r o p o x i d e [AI(OC=H~)] a t 420"C (4) i s shown i n F i g u r e 7 f o r c o m p a r i s o n . ~ ~ne d e p o s i t i o n of AI20 . a t 700:C w i t h the AICI_~ - - l l o gas

w i t h a r e f r a c t i v e i n d e x (3) and Duf fy and Kern have r e p o r t e d an i n d e x o f 1 . 6 4 f o r d e p o s i t i o n t e m p e r a t u r e s be tween 450 and 475~ (5) u s i n 8 a p r o c e s s s i m i l a r t o o u r s .

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Low Temperature Aluminum Oxide Deposition 597

x I.&J

Z 0

w

m

I - -

I.&.

(3=

1.80

1.70

m

m

b

m

m

1.60 -

1.50 300

. . ~ B U L K AI203

TMAJL (Ar) : 20cc/min 02 = 50 cc/min

ABOAF

@

U �9

[ [ [ [ [ I I [ i [ I I

350 400 DEPOSITION TEMPERATURE (%)

F i s u r e 7 : D e p e n d e n c e o f t h e i n d e x o f r e f r a c t i o n on t h e d e p o s i t i o n t e m p e r a t u r e .

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598 Ehle, Baliga and Katz

TMAI(Ar) = 20cc/min 1 . 7 - T = 5 5 0 ~

~ 1.6 i - - e~

1.5 0

r ~ U_ t~J r ~

I . I ~ I I I L I 40 80 120 160

OXYGEN FLOW RATE (cc/min) Figure 8: Dependence of the index of r e f r a c t i o n on the

oxygen f l ow r a t e .

The d l e l e c t r i c c o n s t a n t , d i e l e c t r l c s t r e n g t h , and r e s i s t i v i t y of f i l m s d e p o s i t e d a t v a r i o u s t e m p e r a t u r e s and w i t h v a r i o u s oxygen c o n c e n t r a t i o n s were a l s o m e a s u r e d . No t r e n d was o b s e r v e d as a f u n c t i o n o f t h e s e p a r a m e t e r s . The v a l u e of the d i e l e c t r i c c o n s t a n t v a r i e d be tween 7.5 and 7 .8 w h i l e v a l u e s of t he d i e l e c t r i c s t r e n g t h r a n g e d from 7 .5 ~ 7 .9 X 10- V/cm and t h e r e s i s t i v i t y was g r e a t e r t han 10 ohnr-cm. As was the case w i t h the i n d e x o f r e f r a c t i o n , t h e s e r e s u l t s compare f a v o r a b l y w i t h t h o s e r e p o r t e d i n t h e l i t e r a t u r e f o r AI_O 3 f i l m s d e p o s i t e d by o t h e r t e c h n i q u e s a t z h i g h e r t e m p e r a t u r e s .

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Low Temperature Aluminum Oxide Deposition 599

In o r d e r to i n v e s t i g a t e the i n - d e p t h d i s t r i b u t i o n of i m p u r i t i e s in the A1203, s e c o n d a r y ion mass s p e c t r o m e t r y (SIMS) was p e r f o r m e d . ATualyses were o b t a i n e d u s i n g a Cameca IHS 3 - f ion m i c r o s c o p e . ~amples were examined u s i n g a mass a n a l y z e d p r i m a r y beam of O? h a v i n g an impac t e n e r g y of 11.5 keV and m o n i t o r i n g the ~ o s i t l v e s e c o n d a r y i o n s . Charge n e u t r a l i t y was m a i n t a i n e d on the t h i c k e r f i l m s (> 2000 ~) by u s i n g an e l e c t r o n f l o o d gun. Y m p u r i t l e s p r e s e n t in the f i l m s were i n i t l a l l y i d e n t i f i e d by r e c o r d i n g mass s p e c t r a f rom m/e of I to 100. Care was t a k e n to i n s u r e t h a t the mass s p e c t r a were o n l y r e c o r d e d + in . t ~ 3 .A~203 f i l m . The i m p u r i t y s p e c i e s found were C ana Ha . In o r d e r to f o l l o w the. 2 ~ . d i s t r i b u t i o n s of C and Na _J.n the ~N2a~3 d i e l e c t r i c e + s ~ c o n d a ~ i ~ i n t e n s i t i e s o f 12C+ and 2 as w e l l a s - AI and Si , were m o n i t o r e d as a f u n c t i o n ~ ~ u t t e r i n g t i m e . T h % e d o ~ l y - c h a r g e d s e c o n d a r y ions o f

A1 (m/e = 13 .5 ) and ~ o S i ' ' (m/e = 14) were used s i n c e the i n t e n s i t i e s o f the s l n g l y - c h a r g e d s p e c i e s were too i n t e n s e f o r the e l e c t r o n i c s . A t y p i c a l in dep th p r o f i l e f o r a f i l m d e p o s i t e d a t 380~ i s shown in F i g u r e 9 . Data a r e p l o t ~ as s e c o n d a r y ion i n t e n s i t y ( c o u n t s / s e e ) v e r s ~ s dep th

10 6

10 5

~n

10 4 o

>- 10 3

I----

z 10 2 Z

2

I0 I

I0 o I I 0 800 1600

DEPTH (Angstroms)

F i g u r e 9 :

,~__28Si + +

~ 23No + 12C+

~J~ 27AI ++ I

2400

SIMS i m p u r i t y p r o f i l e f o r AI203 f i l m d e p o s i t e d a t 3800C.

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600 Ehle, Balig~, and Katz

( ~ ) . A dep th s c a l e (~) was p o s s i b l e due to pos t -bombardment measurements of the s p u t t e r e d c r a t e r s u s i n g a S loan Dektak ~ r f ~ e p r o f i l o m e t e r . One n o t e s a r e l a t i v ~ y . c o n s t a n t

"A1 - s i g n a l t h r o u g h o u t the AI~O~ f i l m . The - v S i ~ s i g n a l s een in the f i l m cou ld r e s u l t - f r o m an o r g a n i c s p e c i e s , 1 4 m +

t~i2o a l s o a t nominal mass 14. The ca rbon i m p u r i t y i s q u l t ~ p r o b a b l y i n h e r e n t in the CVD p r o c e s s w i t h the source in the o r g a n o m e t a l l i c . However. the s ~ r c ~ of the Na i m p u r i t y was i n l t l a l l y l e s s o b v i o u s . The ~ONa ~ was d e t e c t e d above the background l e v e l a t the c e n t e r of the f i l m and p r o g r e s s i v e l y i n c r e a s e d as the s u r f a c e was app roached . Th i s s u g g e s t e d the p o s s i b i l i t y of a t e m p e r a t u r e dependent source which might be a i n t e g r a l p a r t of the r e a c t i o n chamber. A c c o r d i n g l y , a l l pyrex g l a s s p a r t s of the r e a c t i o n chamber were r e p l a c e d w i t h h igh p u r i t y q u a r t z . No 23Na + cou ld be d e t e c t e d in the A1203 f i l m s a f t e r t h i s change was i n t r o d u c e d .

Summary

The e f f e c t of v a r i a t i o n s in the major d e p o s i t i o n p a r a m e t e r s upon the growth r a t e the the p r o p e r t i e s of A1203 f i l m s p r e p a r e d by the o x i d a t i o n o f TNAI have been d e t e r m i n e d . The a c t i v a t i o n energ~ fo r the growth r a t e a t t e m p e r a t u r e s be tween 300 and 400"C was found t o be 20 .5 K c a l / m o l e . The f i l m s t r u c t u r e and index of r e f r a c t i o n was found to v a r y wi th b o t h the d e p o s i t i o n t e m p e r a t u r e and the 02/TNA1 mole r a t i o . F i lm p r o p e r t i e s such as the d i e l e c t r i c c o n s t a n t , d i e l e c t r i c s t r e n g t h , and r e s i s t i v i t y appear to be r e l a t i v e l y c o n s t a n t f o r the narrow range of d e p o s i t i o n t e m p e r a t u r e s i n v e s t i g a t e d . The f i l m p r o p e r t i e s compare f a v o r a b l y wi th h i g h e r t e m p e r a t u r e CVD p r o c e s s e s r e p o r t e d in the l i t e r a t u r e f o r the d e p o s i t i o n o f A1203.

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Low Temperature Aluminum Oxide Deposition 601

R e f e r e n c e s

[1] T. I t o and Y. Saka t , S o l i d S t a t e E l e c t r o n (1974) .

1__! , 7 5 1

[2] L.H. Ha l l and W.C. R o b i n e t t e , 7. E l ec t roehem Soc, , 1624 (1971) .

[3] V . J . S i l v e s t r i , C.M. Osburn, and D.W. Ormond, E l ec t rochem S o t . , 123 , 902 (1978) .

[4] ~.A. Aboaf , 3. E l ec t rochem S o c . , 114 , 948 (1967) .

[5] M.T. Du l ly and W. Kern, RCA Review, 754 (Dec. 1970 ) .

[ 6 ]

118

7.

W. Kern and R.C. Hein, 7. E l e c t r o c h e n S o t . , 11__!7 , 562 (1970).

[7] J .R . Shea ly , B . J . B a l i g a , R . J . F i e l d , and S.K. Ghaudhi, J . E l e c t r o c h e m S o e . , 128 , 558 (1981 ) .

[8] R.C. Weast, Ed . , p . B - 8 6 , Handbook o f Chemis t ry and P h y s i c s , 50 th Ed . , The Chem. Rubber Co. , C l e v e l a n d , Ohio (1969).

[9] P.W. Leed, p . 1 5 , Ceramics , Re luho ld P u b l . , Co. , New York (1961) .

B . J . B a l l g a and S.K. Ghandhi, 7. Appl. Phys . 4_44 , 990 (1973).

B.3. B a l l g a and S.K. Ghandhl, 7. E l ec t rochem S o t . , 123 , 941 (1976) .

[ lo]

[11]