28
© SEMCHIP 1 DAC 2001 Interactive Tutorial on Fundamentals of Si gnal Integrity for High-Speed/High-Density Design Andreas Cangellaris, Jose Schutt-Aine and Umberto Ravaioli ECE Department, University of Illinois at Urbana-Champaign [email protected], [email protected], [email protected] Alina Deutsch IBM Corporation, T.J. Watson Research Center [email protected] © SEMCHIP 2 DAC 2001 Outline Introduction (A. Deutsch) The interconnect bottleneck in high-speed systems Interconnect Modeling Fundamentals (A.Cangellaris/U. Ravaioli) Time-domain & frequency-domain transmission line analysis Lossy lines and signal dispersion Crosstalk for short lengths of coupled interconnects On-Chip Interconnects (A. Deutsch) Modeling of on-chip interconnects Interconnect impact on system performance Future trends

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Page 1: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 1DAC 2001

Interactive Tutorial onFundamentals of Si gnal Inte grity

for Hi gh-Speed/Hi gh-Density Desi gn

Andreas Cangellaris, Jose Schutt-Aineand Umberto Ravaioli

ECE Department, University of Illinois at [email protected], [email protected], [email protected]

Alina DeutschIBM Corporation, T.J. Watson Research Center

[email protected]

© SEMCHIP 2DAC 2001

Outline

• Introduction (A. Deutsch)

– The interconnect bottleneck in high-speed systems

• Interconnect Modeling Fundamentals(A.Cangellaris/U. Ravaioli)

– Time-domain & frequency-domain transmission line analysis– Lossy lines and signal dispersion– Crosstalk for short lengths of coupled interconnects

• On-Chip Interconnects (A. Deutsch)

– Modeling of on-chip interconnects– Interconnect impact on system performance– Future trends

Page 2: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 3DAC 2001

Outline (cont.)

• Interconnects at the Package and Board Level(J.Schutt-Aine/U. Ravaioli)– Multiconductor transmission line theory– Crosstalk modeling and measurement– Lumped vs. distributed modeling of interconnects

• Concluding Remarks

© SEMCHIP 4DAC 2001

Fundamentals of Transmission Line Theory

Page 3: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 5DAC 2001

Transmission-line theory quantifies signal propagationon a system of two parallel conductors with cross-sectional dimensions much smaller than their length

z (direction along interconnect axis)

Generic symbol for a two-conductor lineV(z,t)

I(z,t)

FamiliarCross sections

Coaxial Stipline Microstrip

© SEMCHIP 6DAC 2001

For a uniform transmission line, the electric and magnetic fieldsare transverse to the direction of wave propagation (and hence, tothe axis of the line). Thus, transmission line fields are calledTransverse Electromagnetic (TEM) Waves

Electric field lines

Magnetic field lines

The electric field behaves like an electrostatic field.

Over the cross section, the potential difference between

any two points and on the two conductors is constant:

( , , , ) ( , )��

A B

A B

E x y z t dl V z t→

⋅ =∫

centerconducto

Over the cross section, the magnetic field looks like a

magnetostatic field. Its line integral around one of the

conductors equals the total current in the conductor.

( , , , ) ( , )��

H x y z t d l I z t⋅ =

r

�∫

x

y

Page 4: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 7DAC 2001

At every cross section of a transmission line thecurrents on the active and return wiresbalance each other.This balance leads to field confinement andreduced interference.

In a transmission line configuration as much chargemoves down the “active” wire that much charge ofnegative polarity moves down the “return path”

Electric fieldbetween wires

(+++++)

(- - - - -)

Direction along interconnect

Active wire

Return path

Direction along interconnect

Active wire

Return path

8DAC 2001

Signal propagation is quantified in terms of thesolution of the so-called Telegrapher’s equations

z

V(z,t)

I(z,t)

V(z+∆z,t)

∆z

I(z,t) I(z+∆z,t)

V(z,t)

R(∆z)

G(∆z)

L(∆z)

C(∆z)

( , ) ( , )( , )

( , ) ( , )( , )

v z t i z tRi z t L

z t

i z t v z tGv z t C

z t

∂ ∂= − −

∂ ∂∂ ∂

= − −∂ ∂

Time-Domain Form

( , )( , ) ( , )

( , )( , ) ( , )

dV zRI z j LI z

dz

dI zGV z j CV z

dz

ωω ω ω

ωω ω ω

= − −

= − −

Frequency-Domain Form

Page 5: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 9DAC 2001

Transmission-Line Parameters

• Per-unit-length capacitance C• Per-unit-length conductance G• Per-unit-length inductance L

– Loop inductance– Frequency dependence due to

skin effect

• Per-unit-length resistance R– Strong frequency dependence

due to skin effect

Current Loop

∆z

© SEMCHIP 10DAC 2001

2 2

2 2 2

Neglecting losses for simplicity:

( , ) ( , )1

0( , ) ( , )

1where is the wave velocity on the line.

General solution: ( , ) ( )

p

p

p

v z t i z tL

v vz ti z t v z t z v t

Cz t

vLC

v z t f z v t+

∂ ∂ = − ∂ ∂∂ ∂ ⇒ − =∂ ∂ ∂ ∂= −∂ ∂

=

= − +forward wave�����

0 0

0

( )

1 1Current wave: ( , ) ( ) ( )

where is the of the line.

p

p p

f z v t

i z t f z v t f z v tZ Z

LZ

C

+ −

+

= − − +

=

backward wave

forward wave backward wave

characteristic impedance

�����

������� �������

Time-Domain Solution of Telegrapher’s Equations

Page 6: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

11DAC 2001

A voltage signal f (t) launched on a lossless linepropagates unaltered with speed vp dependent on thetransmission-line properties.

z

V+(z0,t)

I+(z0,t)

Vs

t

Vs(t) = f (t)

t

t

V+(z0,t)

I+(z0,t)

t0 = z0/vp

Time of flight

0

1

( , )

( , )

pvLC

V z t

I

LZ

z t C

+

+

=

=�

CharacteristicImpedance

© SEMCHIP 12DAC 2001

The characteristic impedance dictates theamplitude of the voltage waveform launchedon the line

V+(0,t)

I+(0,t)

Vs To infinity (or matched)

RS

0

00

( ) (0, ) (0, )(0, ) ( )

(0, ) (0, )S S

SS

V t V t I t R ZV t V t

Z RV t Z I t

+ ++

+ +

= + ⇒ = +=

Page 7: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 13DAC 2001

Discontinuities in the characteristic impedanceof a transmission line give rise to reflections

Z01 Z02

(V +, I +) (V ++, I ++ )(V −, I −)

02 01

02 01

02

01 0202 01

Reflection Coefficient: =

and 2

Transmission Coefficient:

Z ZV V V TV

Z ZV V

ZI ITZ Z

Z Z

− + ++ +

− ++− ++

− Γ = Γ = + = − = = +

Maintaining a fairly constant value of the characteristic impedancealong an interconnect path is essential for reflection suppression.

( )1 2

1 201 02

At the junction it is:

1

V V V V V

VI V V I

Z Z

+ − ++

+++ −

= + = =

= − = =

© SEMCHIP 14DAC 2001

Source and load impedances impact transmission lineperformance of the interconnect

Vs ZL(f)ZS(f) Z0

0

0

0

Load reflection coefficient:

( )( )

( )

Load transmission coefficient:

2 ( )( ) 1 ( )

( )

LL

L

LL L

L

Z f Zf

Z f Z

Z fT f f

Z f Z

−Γ =+

= + Γ =+

0

0

Source reflection coefficient

( )( )

( )S

SS

Z f Zf

Z f Z

−Γ =+

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15DAC 2001

Example: Unterminated interconnect (ZL=∞) driven by highsource impedance driver with ZS>>Z0 (e.g. unbuffered CMOS)

Source (ΓS ≈ 1) Load (ΓL = 1)

tt

T=d / v(One-wayDelay)

2T

3T

4T

V+

ΓLV+

ΓSΓLV+

ΓL ΓSΓLV+

Bounce diagram

0

0 00 0

0 0

0

0

Excitation: Step Pulse of amplitude

, 1

1, 2

SS

S S

LL L

L

V

Z Z ZV V V

Z Z Z Z

Z ZT

Z Z

+ −= << Γ = ≈+ +

−Γ = = =+

tT 3T 5T

VL(t )

2V+

~4V+

~6V+

Steady-state value V0

Slow response

© SEMCHIP 16DAC 2001

Example: Unterminated interconnect (ZL=∞) driven by lowsource impedance driver with ZS<Z0 (e.g. ECL or strong TTL)

T=d / v(One-wayDelay)

Source (ΓS ≈ –1) Load (ΓL = 1)

tt

2T

3T

4T

V+

ΓLV+

ΓSΓLV+ = - 0.75 V+

ΓL ΓSΓLV+ LV+ = -0.75 V+

Bounce diagram

0 0

0 00 0

0 0

0

0

Excitation: Step Pulse of amplitude ; 7

7, 0.75

8

1, 2

S

SS

S S

LL L

L

V Z Z

Z Z ZV V V

Z Z Z Z

Z ZT

Z Z

+

=−= ≈ Γ = = −

+ +−Γ = = =+

tT 3T 5T

VL(t )

2V+

0.5V+

1.625V+

Steady-State: V0

Overshoot & Ringing

Page 9: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 17DAC 2001

A capacitor CL represents the load at the gateinput of the receiver. Its presence adds delay.

CL

(V+, I+)

(V-, I-)( )

0

1

, ( ) 0.

L

L

LL L L

V V V

I V VZ

dVI C V t T

dt

+ −

+ −

= +

= −

= = =Interconnect delay = T

( )0

( ) 1 exp( ( ) / ) ,

where =Z .

Let be the time at which ( ) 0.9 .

2.3

L

d L d

d

V t V t T t T

C

T V t T V

T T

ττ

τ

+

+

= − − − >

= == + ⇒

0Extra delay due to the capacitor is 2.3Z C

© SEMCHIP 18DAC 2001

Delay is introduced by all capacitive and inductivediscontinuities present in a signal path

Wire bonds(primarily inductive) Interconnect bends

(primarily capacitive) Via(primarily inductive)

Z0Z0 Z0 Z0

Equivalent circuit for SPICE-based transient simulation

Page 10: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

19DAC 2001

( )

0

0

0

1.15 /

( 2.5 nH, 50 Ohm; 57.5 ps)

( ) 1 exp( / )

where 2

( ) reaches 0.9 at 2.3

d

d

L

L

L

T L Z

L Z T

V t V t

L

Z

V t V t

τ

τ

τ

++ +

++ +

=

= = =

= − −

=

=Hence, the inductor adds a delay of

( )

0

0

0

1.15

(C=1 pF, Z 50 Ohm; 57.5 ps)

( ) 1 exp( / )

where 2

( ) reaches 0.9 at 2.3

d

d

C

C

C

T CZ

T

V t V t

CZ

V t V t

τ

τ

τ

++ +

++ +

=

= =

= − −

=

=

.

Hence, the capacitor adds a delay of

The delay due to a capacitive o an inductivediscontinuity depends on the values C or L and Z0

Capacitive Discontinuity

Z0Z0C

(V-, I-)

(V++, I++)(V+, I+)

Z0 Z0L

(V+, I+)

(V-, I-)

(V++, I++)

Inductive Discontinuity

© SEMCHIP 20DAC 2001

Slots in ground planes increase interconnect delay andenhance noise generation and interference

The return current in the ground plane flows around the slot. Hence,• Extra L ⇒ extra delay • Unbalanced currents lead to enhanced emissions• Interference (crosstalk) with other wires beyond immediate neighbors

The slot in the ground planeacts as a slot antenna.

Ground plane

interconnect

Interference occurs oneither side of the plane

Page 11: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 21DAC 2001

Transmission line models of interconnectspredict only “differential-mode” currents

+

- Conduction (return)current

Displacementcurrent (radiation)

+

-

I1

I2

ID

- ID

1 2

1 2

1

2

Differential-mode current: 2

Common-mode current: 2

D

C

C D

C D

I II

I II

I I I

I I I

−=

+=

= += −

Radiated emissions calculationcan be grossly incorrect if thecommon-mode current is not taken into account

Transmission-LineModel

© SEMCHIP 22DAC 2001

���

��

��

��

��

���

���� ��� �

��� �

��

��������������

��

� �!"���#��$%&�

��'��(�

���)��(�

The input impedance of a match-terminated interconnect with acontinuous return path remains essentially contact over a broadfrequency range

Plots generated using UIUC’s fast time-domain solvers (Prof. E. Michielssen)

Page 12: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 23DAC 2001

����

�*�

*�

���

�*�

���

���� ��� �

��� ���+�,��)���

��� ���+�,��",�)���

��������������

��

� �!"���#��$%&�

��'��(�

���)��(�

The disruption of the return path caused by the slot manifests itselfas an added inductance at lower frequencies and radiated emissions(radiation resistance) at higher frequencies

Plots generated using UIUC’s fast time-domain EM solvers (Prof. E. Michielssen)

© SEMCHIP 24DAC 2001

Mesh (Grid) Planes in PCBs increase thecharacteristic impedance of the lines

Return current

0

Per-unit-length inductance, , increases.

Per-unit-length capacitance, , decreases.

increases

L

C

LZ

C=

Page 13: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 25DAC 2001

In the case of mesh (grid) planes, high-speed linesshould be routed right above the plane metallization

Grid Plane(cross section)

interconnects

Advantages-Better impedance control-Reduced cross-plane interference

© SEMCHIP 26DAC 2001

Lossy Transmission Lines

• Ohmic loss in the metallization– Frequency-dependent R and L (skin effect)

• Insulating substrate loss– Frequency-dependent G

• Semiconductor substrates– Frequency-dependent R and L

– Frequency-dependent G and C

Page 14: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 27DAC 2001

Frequency-Domain Solution of Telegrapher’s Equations

2

2

In the frequency domain, interconnect loss can be accounted for easily.

( , )[ ( ) ( )] ( , )

( , )( ) ( ) ( , ) 0

( , )[ ( ) ( )] ( , )

where ( ) ( ) ( ) is the pe

dV zR j L I z

d V zdz Z Y V zdI z dz

G j C V zdz

Z R j L

ω ω ω ω ωω ω ω ω

ω ω ω ω ω

ω ω ω ω

− = + ⇒ − =− = +

= + r-unit-length impedance of the line

and ( ) ( ) ( ) is the per-unit-length admittance of the line.Y G j Cω ω ω ω= +

0

0

( , ) ( ) exp( ) ( ) exp( )

1( , ) ( ) exp( ) ( )exp( )

( )

( ) [ ( ) ( )][ ( ) ( )] is the ,

( ) ( )and Z ( )

( ) ( )

V z V z V z

I z V z V zZ

R j L G j C

R j L

G j C

ω ω γ ω γ

ω ω γ ω γω

γ ω ω ω ω ω ω ω

ω ω ωωω ω ω

+ −

+ −

= − + = − −

= + +

+=+

complex propagation co

General s

nstan

olut n

t

io :

is the .characteristic impedance

© SEMCHIP 28DAC 2001

0

When 0 it is the per-unit-length ohmic loss in the wires that

dominates the loss; hence,

( ) ( ) ( ) ( )( ) 1

( )

For the interconnect structures of interest , is in the order of nH/cm;

G

R jL L RZ j

j C C L

L

ω ω ω ωωω ω ω

+= = −

0

hence, for a few tens of MHz, (especially for thin-film wire).

1 ( )Thus, ( )

2

On the other hand

for low frequenc

,

ies:

f L R

j RZ

C

ω

ωωω

< <<

−≈

Notice that the real and imaginary parts are of the same magnitude.

0

such that for high fr ,

1 ( )( ) 1

2

equ

( )

( ) ,

e s

ncie R L

L RZ j

C L

R

ω

ωωω ω

ω ω

<<

= −

∝Notice that, since at high frequencies the characteristic

impedance is predominantly real.

The characteristic impedance of a lossy lineis a complex number!

Page 15: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

29DAC 2001

The presence of loss is responsible for signal attenuationand distortion

0

The propagation constant becomes frequency dependent:

( )= [ ( ) ( )][ ( ) ] ( ) ( ).

( ) is the ( ) is the .

( , ) exp( ( ) )ex

p(

R j L G j C j

V z V z j

γ ω ω ω ω ω ω α ω β ωα ω β ω

ω α ω+ +

+ + = +

= − −attenuation

attenuation constant; phase constant

�������

0

( ) )

The characteristic impedance and the phase velocity are frequency dependent:

( ) ( )( ) , ( )

( ) ( )p

z

R j LZ v

G j C

β ω

ω ω ω ωω ωω ω β ω

+= =+

phase shift�������

Different frequencies in the spectrum of a pulse propagate atdifferent speeds and suffer different attenuation.This results in pulse distortion often referred to as dispersion

Lossy lineInputPulse

OutputPulse

© SEMCHIP 30DAC 2001

00

0

0

00

0

0

00

0

0

tanh( )( )

( ) tanh

Neglecting losses, , is real, and it is:

tan( )

tan

Periodic function with period / 2

1

max( ) ; min(

1

Lin

L

Lin

L

L

Lin in

L

L

Z Z dV dZ d Z

I d Z Z d

j Z

Z jZ dZ d Z

Z jZ d

Z Z

Z ZZ Z Z

Z Z

Z Z

γγ

γ βββ

λ

+= =+

=+=+

−++

− =−−+

0

00

0

0

0 0

0

1

)

1

Matched Load: ( )

Shorted Line: 0 ( ) tan

- / 4

L

L

L

L

L in

L in

Z Z

Z ZZ

Z Z

Z Z

Z Z Z d Z

Z Z d jZ dβλ

−−+

=−++

• = ⇒ =• = ⇒ =

A shorted line of length equal to an odd multiple of has infinite input

impedance and th

us appears as an open circuit.

Input Impedance of a Transmission Line(or, how long wires “transform” load impedances)

Z0,γ

d

V(d)

I(d)

ZL

Page 16: Interactive Tutorial on Fundamentals of Signal Integrity ...educypedia.karadimov.info/library/signalA.pdf · Electric field lines Magnetic field lines The electric field behaves like

© SEMCHIP 31DAC 2001

Grounding wires running some distance along aground plane or chassis exhibit transmission-linebehavior at RF frequencies.

Zg Z0

d

• Safety earth is not an RF ground.

• At high frequencies, the claim that “everything is connected to earth” through safety earth is meaningless

• At high frequencies, “single point ground” is meaningless

© SEMCHIP 32DAC 2001

Skin-Effect Resistance

At frequencies such that the skin depth islarger or comparable with the conductorthickness, the current distributes uniformlyover the conductor cross section.

At high frequencies, where the skindepth is smaller than the conductorthickness, current crowding aroundthe perimeter occurs.

1Skin depth: =

π µσ

• At f = 1 GHz, for aluminum with conductivity σ = 4×107 S/m andpermeability µ = 4π × 10-7 H/m, the skin depth is 2.5 µm.• For high enough frequencies, the p.u.l. resistance increases as √√f

Skin effect

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© SEMCHIP 33DAC 2001

The contribution of the return path to interconnectresistance may need to be taken into account

10-2

10-1

100

101

2.8

3

3.2

3.4

Frequency (GHz)

L pe

r-un

it-le

ngth

(Ohm

s/cm

)

10-2

10-1

100

101

0

1

2

3

4

Frequency (GHz)

R p

er-u

nit-l

engt

h (O

hms/

cm)

PEC reference planesCopper reference planePEC reference planesCopper reference plane

Frequency dependenceof the p.u.l. resistance(top) and inductance(bottom) of the singlestripline configurationwith w=50 µm, t=10 µm,g=10 µm, and h=100 µm.

� �

� �

© SEMCHIP 34DAC 2001

Extraction of the frequency-dependent p.u.l. interconnectresistance must take into account the presence ofadjacent conductors (proximity effect)

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35DAC 2001 10-4

10-3

10-2

10-1

100

101

0.5

1

1.5

2

2.5

3

3.5

Frequency (GHz)

Per

-uni

t-len

gth

Indu

ctan

ce (n

H/c

m)

L12

L11

10-4

10-3

10-2

10-1

100

101

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Frequency (GHz)

Per

-uni

t-len

gth

Res

ista

nce

(Ohm

s/cm

)

R12R11

w

t

h

g

g

s

1

2

w= 50 µm, t=10 µm, s= 30 µmh= 110 µm, g= 10 µm, εr=4

Aluminum: σ=3.3E7 S/m

Copper: σ =5.8E7 S/m

The per-unit-length resistance matrix has non-zero off-diagonalelements. Taking these off-diagonal elements into account isimportant, especially for the tightly coupled wires

© SEMCHIP 36DAC 2001

0 0.2 0.4 0.6 0.8 1

x 10-8

-0.05

0

0.05

0.1

0.15

0.2

Time (sec)

Far-end Voltage of Victim line

Vol

tage

(V)

0 0.2 0.4 0.6 0.8 1

x 10-8

0

0.2

0.4

0.6

0.8

1

Vol

tage

(V)

Far-end Voltage of Driven line

Time (sec)

~ 1 ns

Vs

Zo

1 pF

length=20 cm

Risetime=50 ps 1 pF

Zo

+– w

t

h

g

g

s

1

2

90%

Impact of different metallization on delay

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37DAC 2001

��

����������������������� � ��

��

����������������������� � ��

Cross-section of a stripline geometry. s=50 µm, w=50 µm, t=10 µm, g=10 µm, h=200 µm and εr=4. Copper metallization.

Constant Model (Rdc, L� , C)Frequency dependent model: PEC reference planes (R(f), L(f), C)Frequency dependent model: Copper reference plane (R(f), L(f), C)

Impact of frequency-dependent loss oninterconnect transient response

38DAC 2001

The effect of frequency-dependent loss isparticularly apparent in the cross-talk levels

��

����������������������� � ��

��

����������������������� � ��

Constant Model (Rdc, L� , C)Frequency dependent model: PEC reference planes (R(f), L(f), C)Frequency dependent model: Copper reference plane (R(f), L(f), C)

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© SEMCHIP 39DAC 2001

Insulating Substrate Loss

• Characterized in terms of the substrate materialconductivity or loss tangent

• Transverse electric field between conductors results in atransverse leakage current and, thus, ohmic loss

( )( )( ) ( ) ( ) ( ) 1 ( ) 1 tan ( )

( )

( )( ) ( ) ( ) 1

( )

( ) ( )tan ( )

( ) ( )

j j j

j j j

ε ωε ω ε ω ε ω ε ω ε ω δ ωε ω

σ ωσ ω ωε ω ω ε ωωε ω

ε ω σ ωδ ωε ω ωε ω

′′ ′ ′′ ′ ′= − = − = − ′ ′ ′+ = − ′

′′= =

′ ′

E�

ε J� ε,σ CG

© SEMCHIP 40DAC 2001

The assumption of constant loss tangent leads tophysically inconsistent models for G

• Assuming tanδ is constant yields G(ω) ∝ ω– Such a behavior violates causality!– For a causal circuit

Re{ ( )} is an of frequency

Im{ ( )} is an odd function of frequency

Y

Y

ωω

even functionCG( )Y ω

Coaxial 2 2,

ln( / ) ln( / )

tan

C Gb a b a

G G

C C

πε πσ

σ ω δε

= = ⇒

= ⇒ =

2b

2a

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41DAC 2001

Simply assuming the loss tangent to remain constantover a broad (multi-GHz) frequency range leads toa non-physical behavior of G(ω)• A physically correct model needs to start with a physically-

correct description of the frequency dependence of the complexpermittivity.– Use measured data for the complex permittivity to synthesize a Debye

model for it

– Use the synthesized Debye model for the extraction of C(ω) and G(ω)

1

2 21

2 21

( ) ( ) ( )1

1( )tan ( )

( )1

( ) tan

Kk

k k

Kk k

k kK

k

k k

jj

G

εε ω ε ω ε ω εωτ

ω ε τω τε ωδ ω

εε ω εω τ

ω ω δ

∞=

=

∞=

′ ′′= − = + ⇒+

′′ += =′ +

+∝ ⇒

∑even function of frequency

42DAC 2001

Capacitive and Inductive Crosstalkin Short Interconnects

1 11 12 1 1 11 12 1 1

2 21 22 2 2 21 22 2 2

1 2 1 2

1 11 12

2

N N

N N

N N N NN N N N NN N

N

V R R R I L L L I

V R R R I L L L Idj

dz

V R R R I L L L I

I G G

Id

d z

I

ω

− = + − =

� �

� �

� �

1 1 11 12 1 1

21 22 2 2 21 22 2 2

1 2 1 2

N N

N N

N N NN N N N NN N

G V C C C V

G G G V C C C Vj

G G G V C C C V

ω

+

� �

� �

x

V1 V2 V3 VNyReferenceconductor

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© SEMCHIP 43DAC 2001

Crosstalk in Coupled Lines

• For interconnects with more than two (active) conductors,crosstalk analysis is most effectively performed in terms of acircuit simulator that can support MTL models (*).– Most common (and computationally efficient) SPICE

equivalent circuits for MTL assume lossless transmissionlines.

– Models for MTLs with losses (including frequency-dependentlosses associated with skin effect) are available also. They areessential for accurate analysis of interconnect-induced delay,dispersion, and crosstalk at the board level for signals of GHzbandwidths.

– It is assumed that the interconnect structure is uniformenough for its description in terms of per-unit-length L,C,R,and G matrices to make sense.

(*) V.K. Tripathi and J.B. Rettig, “A SPICE Model for Multiple Coupled Microstrips and OtherTransmission Lines,” IEEE Trans. Microwave Theory Tech., vol. 33(12), pp. 1513-1518,Dec. 1985.

© SEMCHIP 44DAC 2001

For the case of a three-conductor, lossless line inhomogeneous dielectric, with resistive terminations,an exact solution is possible.• Exact solutions are useful because:

– they help provide insight into the crosstalk mechanism;– they can be used to validate computer-based simulations .

• The following results were first published by C.R. Paul (C.R.Paul, “Solution of transmission line equations for three-conductor lines in homogeneous media,” IEEE Trans. OnElectromagnetic Compatibility, vol. 20, pp. 216-222, 1978.

~Vs

Rs

RNERFE

RLlIG (0)

IR (0)

IG (d)

IR (d)

VG (0) VG (d )

VNE VFE

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45DAC 2001

Exact solution for crosstalk in a lossless, three-conductor line with resistive terminations

Inductive &CapacitiveCouplingCoefficients

2

2

Per unit length parameters: ,

2 /

1

2 / 1

1

DC

G G M

R M R

NENE LG G

NE FE

NE FEM

NE FE LG

L M C C

M L C C

RS j lV j Ml C S I

D R R k

R RS j lj C l C S V

D R R k

π λω α

π λωα

− = = −

= + + + −

+ + −

Near -end and far -end crosstalk voltages :

L C

sinwhere, cos , , 1, and

DC

DC DC

G

NE FEFEFE G M G

NE FE NE FE

M

G R G R

R RS RV j MlI j C lV

D R R R R

l M CC l S k

l L L C C

ω ω

βββ

= − + + +

= = = = ≤

46DAC 2001

Exact solution for crosstalk in a lossless, three-conductor line with resistive terminations

( )( )( )( ) ( )2 2 2 2 1 1

1 ;1 1

, , , ;

are the characteristic impedances of each

line in the presence of the

/ , /

SG LR LG SRG R G R

SR LR SG LG

S NEL FESG LG SR L

CG G G CR

RCG CG CR CR

R R

D C S k j CS

R

Z L C Z L C

RR R

Z Z Z Z

α α α αω τ τ ω τ τ

α α α α

α α α α

− −= − − + + + +

=

=

= =

=

=

G

other one;

, ,

are the time constants of the coupled lines;

, , are the voltage and current of the

generator circuit under dc

DC DC

G S L NE FERG R R

S L S L NE FE NE FE

SLG S G

S L S L

L l R R R RL lC l C l

R R R R R R R R

VRV V I

R R R R

τ τ= + = ++ + + +

= =+ +

excitation (no coupling to the receptor circuit).

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© SEMCHIP 47DAC 2001

Under the assumptions of electrically short lines , and weakcoupling , the crosstalk equations simplify considerably

• A line is said to be electrically short if its length is a small fraction of the wavelength at the highest frequency of interest. Package interconnects fall in this category• Two lines are said to be weakly coupled if the coupling coefficient, k , is sufficiently smaller than 1.

Under these assumptions the equations for the near-end and

far-end crosstalk voltages become:

1

( )( ) ( )( )

1

( )( ) (

NE NE FE LNE

NE FE S L NE FE S L

NE FE LFEFE

NE FE S L N

M

R R R RV

D R R R R R R R R

R R RRV

D R R R R R

j Ml j C l

j Ml

ω ω

ω

= + + + + +

= − ++ + )( )E L

ME F S

j C lR R R

ω + +

© SEMCHIP 48DAC 2001

For weakly coupled, electrically short wires, the crosstalk is alinear combination of contributions due to the mutualinductance between the lines (inductive coupling) and themutual capacitance between the lines (capacitive coupling).

( )

( )

(( )( )

(( )( )

Notice that:

The higher the frequency the larger the crosstalk

Inductive coup

)

)

ling dominat

CAPNE FE L M

CAPFE NE

NENE

NE FE S L

NEFE

INDNE

NE FE

IN

L

D

SE L MF

V R R CRj

VD R R R R

RjV

D R R R

lV Ml

V MV R R C llR

ω

ω

= + = +

+ +

= + = ++ +

•• es for low-impedance loads

Capacitive coupling dominates for high-impedance loads•

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© SEMCHIP 49DAC 2001

Lumped versus Distributed Modelin g

• When the interconnect length is much smaller thanthe wavelength of interest, lumped models providesufficient accuracy and can be used– Typical case for package interconnects at RF

frequencies– Inaccurate for interconnects at the MCM and PCB level

• What does “interconnect length is much smallerthan the wavelength of interest” really mean?– Typical rule of thumb: d < λ/10– …but one can take a closer look at this rule of thumb as

shown next

© SEMCHIP 50DAC 2001

There are four possible implementations of lumpedmodels for a two-conductor interconnect of length d

L/2 L/2

C

L

C

L

C

L

C/2 C/2

T- model

ππ - model

Right L - model

Left L - model

. . .

. . .

p u l

p u l

L L d

C C d

=

=

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© SEMCHIP 51DAC 2001

The accuracy of a lumped model can be examined by consideringthe input impedance obtained when the model is terminated at thecharacteristic impedance of the line(see B. Young, Digital Si gnal Inte grity , Prentice Hall, 2000) L/2 L/2

CZin�Z0

0

2

0 0

0

0 0

For the model to exhibit "transmission line" behavior,

ˆits input impedance should equal the load impedance :

1 2ˆ ˆ/ 2 1 , where 1

ˆ / 2

ˆ For << ,

A

in TT

T

Z

LZ j L Z Z

C LCj CZ j L

Z Z

ωω ωωω

ω

ω ω

= + = ⇒ = − =

++

• ≈• max

0 0 0 max

max

. . . . .

. . . . .

bandwidth of validity of the T-model can be obtained by finding such that

ˆ for .

0.62 0.62 For 0.05, = .

Application: 2 cm, 4 nH/cm, 1

p u l p u l

p u l p u l

Z Z aZ

aLC d L C

d L C

ω

ω ω

ω

− ≤ ≤

= =

= = = maxpF/cm; 4.9 GHzω =

© SEMCHIP 52DAC 2001

5% accuracy bandwidth for the four lumped models

L/2 L/2

C

L

C

L

C

L

C/2 C/2

T- model ππ - model

Right L - model Left L - model

2

0

max

ˆ 12

0.62

L LCZ

C

LC

ω

ω

= −

=

1/22

0

max

ˆ 12

0.62

L LCZ

C

LC

ω

ω

− = −

=

2

0

max

ˆ / 2 12

0.1

L LCZ j L

C

LC

ωω

ω

= + −

=

2

0

max

ˆ /2 12

0.1

L LCZ j L

C

LC

ωω

ω

=− + −

=

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© SEMCHIP 53DAC 2001

The number of segments is dictated by themaximum frequency of interest that must berepresented accurately in the simulation

• The effective bandwidth criteria described earlier can be used toselect the segment size.

max

Interconnect lead with total capacitance

20 pF, and (loop) inductance 50 nH.

Let = 10 GHz be the maximum frequency of interest.

Find the minimum number of lumped segments required

for

C L

f

n

= =Example :

seg seg

maxmax

minseg seg

min

accurate modeling.

/ and / .

20.62 0.622 or 10

0.62

For the given numbers, 101

L L n C C n

f LCn df n n

L C LC

n

ππλ

= =

≤ = ⇒ ≥ ≥

=

© SEMCHIP 54DAC 2001

Use of an insufficient number of segments leads toartificial filtering and phase distortion of thetransmission-line response

The load response for

a source and load

match-terminated, lossless

transmission line is:

20.5expLV j

πλ

= − �

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© SEMCHIP 55DAC 2001

If done properly, distributed RLCG circuitmodeling of MTLs works

Such an approach is preferable when:• the wire resistance must be taken into account; (as

already mentioned, some SPICE vendors provide lossyline modeling through extensions of the exact modelmentioned earlier);

• the line is electrically short, and a few lumped-circuitsegments are sufficient for its modeling;

• the MTL exhibits non-uniformity (variable cross section)along its axis;

• modeling of radiation coupling to the MTL is desired.