IGBT H15R1203

1

IHY15N120R3IH-series

Rev. 2.1 2009-11-25

Reverse conducting IGBT with monolithic body diode

Features:• Powerful monolithic body diode with low forward voltage designed for soft commutation only• TrenchStop® technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat• Low EMI• New TO-247HC package offers increased air & creepage distances compared to TO247 package• Qualified according to JEDEC J-STD-020 and JESD-022 for target applications• Pb-free lead plating; RoHS compliant• Halogen free (according to IEC 61249-2-21)• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications:• Inductive cooking

G

C

E

TypeTypeTypeType VVVV†Š†Š†Š†Š IIII†††† VVVV†ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, TTTTÝÎ=25°CÝÎ=25°CÝÎ=25°CÝÎ=25°C TTTTÝÎÑÈàÝÎÑÈàÝÎÑÈàÝÎÑÈà MarkingMarkingMarkingMarking PackagePackagePackagePackage

IHY15N120R3 1200V 15A 1.48V 175°C H15R1203 PG-TO247HC-3

Maximum ratingsParameter Symbol Value UnitCollector-emitter voltage V†Š 1200 V

DC collector current, limited by TÝÎÑÈàT† = 25°CT† = 100°C

I† 30.015.0

A

Pulsed collector current, tÔ limited by TÝÎÑÈà I†ÔÛÐÙ 45.0 A

Turn off safe operating area V†Š ù 1200V, TÝÎ ù 175°C - 45.0 A

Diode forward current, limited by TÝÎÑÈàT† = 25°CT† = 100°C

IŒ 30.015.0

A

Diode pulsed current, tÔ limited by TÝÎÑÈà IŒÔÛÐÙ 45.0 A

Gate-emitter voltageTransient Gate-emitter voltage (tÔ = 10µs, D < 0.010)

V•Š ±20±25

V

Power dissipation T† = 25°CPower dissipation T† = 100°C PÚÓÚ 254.0

127.0 W

Operating junction temperature TÝÎ -40...+175 °C

Storage temperature TÙÚÃ -55...+175 °C

Soldering temperature,for 10 s (according to JEDEC J-STA-020A) 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

2


Rev. 2.1 2009-11-25

Thermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,junction - case RÚÌñÎ-Êò 0.59 K/W

Diode thermal resistance,junction - case RÚÌñÎ-Êò 0.59 K/W

Thermal resistancejunction - ambient RÚÌñÎ-Èò 55 K/W

Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

Static CharacteristicCollector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 0.50mA 1200 - - V

Collector-emitter saturation voltage V†ŠÙÈÚ

V•Š = 15.0V, I† = 15.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C

---

1.481.701.80

1.70--

V

Diode forward voltage VŒ

V•Š = 0V, IŒ = 15.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C

---

1.551.701.80

1.75- V

Gate-emitter threshold voltage V•ŠñÚÌò I† = 0.40mA, V†Š = V•Š 5.1 5.8 6.4 V

Zero gate voltage collector current I†Š»V†Š = 1200V, V•Š = 0VTÝÎ = 25°CTÝÎ = 175°C

--

--

100.02500.0

µA

Gate-emitter leakage current I•Š» V†Š = 0V, V•Š = 20V - - 100 nA

Transconductance gËÙ V†Š = 20V, I† = 15.0A - 13.9 - S

Integrated gate resistor r• none Â

Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified

Valuemin. typ. max.


Dynamic CharacteristicInput capacitance CÍþÙ - 1165 -

Output capacitance CÓþÙ - 40 -

Reverse transfer capacitance CØþÙ - 32 -

V†Š = 25V, V•Š = 0V, f = 1MHz pF

Gate charge Q• V†† = 960V, I† = 15.0A, V•Š = 15V - 165.0 - nC

3


Rev. 2.1 2009-11-25

Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 25°CÝÎ = 25°CÝÎ = 25°CÝÎ = 25°C

Valuemin. typ. max.


IGBT CharacteristicTurn-off delay time tÁñÓËËò - 300 - ns

Fall time tË - 46 - ns

Turn-off energy EÓËË - 0.70 - mJ

TÝÎ = 25°C,V†† = 600V, I† = 15.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 180nH,Cÿ = 39pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.

Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 175°CÝÎ = 175°CÝÎ = 175°CÝÎ = 175°C

Valuemin. typ. max.


IGBT CharacteristicTurn-off delay time tÁñÓËËò - 370 - ns

Fall time tË - 90 - ns

Turn-off energy EÓËË - 1.25 - mJ

TÝÎ = 175°C,V†† = 600V, I† = 15.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 180nH,Cÿ = 39pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.

4


Rev. 2.1 2009-11-25

Figure 1.Figure 1.Figure 1.Figure 1. Collector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingfrequencyfrequencyfrequencyfrequency(TÎù175°C, D=0.5, V†Š=600V, V•Š=15/0V,R•=14,6Â)

f, SWITCHING FREQUENCY [kHz]

I†, C

OLLE

CTO

R C

UR

RE

NT [A

]

1 10 100 10000

10

20

30

40

50

T†=80°

T†=110°

Figure 2.Figure 2.Figure 2.Figure 2. Forward bias safe operating areaForward bias safe operating areaForward bias safe operating areaForward bias safe operating area(D=0, T†=25°C, TÎù175°C; V•Š=15V)

V†Š, COLLECTOR-EMITTER VOLTAGE [V]

I†, C

OLLE

CTO

R C

UR

RE

NT [A

]

1 10 100 10000.1

1

10

100

tÔ=1µs

20µs

50µs

200µs

1ms

10ms

DC

Figure 3.Figure 3.Figure 3.Figure 3. Power dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casetemperaturetemperaturetemperaturetemperature(TÎù175°C)

T†, CASE TEMPERATURE [°C]

PÚÓÚ,

PO

WE

R D

ISS

IPA

TIO

N [W

]

25 50 75 100 125 150 1750

50

100

150

200

250

300

Figure 4.Figure 4.Figure 4.Figure 4. Collector current as a function of caseCollector current as a function of caseCollector current as a function of caseCollector current as a function of casetemperaturetemperaturetemperaturetemperature(V•Šú15V, TÎù175°C)

T†, CASE TEMPERATURE [°C]

I†, C

OLLE

CTO

R C

UR

RE

NT [A

]

25 50 75 100 125 150 1750

10

20

30

40

5


Rev. 2.1 2009-11-25

Figure 5.Figure 5.Figure 5.Figure 5. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=25°C)


I†, C

OLLE

CTO

R C

UR

RE

NT [A

]

0 1 2 30

15

30

45

V•Š=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6.Figure 6.Figure 6.Figure 6. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=175°C)


I†, C

OLLE

CTO

R C

UR

RE

NT [A

]

0 1 2 3 40

15

30

45

V•Š=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7.Figure 7.Figure 7.Figure 7. Typical transfer characteristicTypical transfer characteristicTypical transfer characteristicTypical transfer characteristic(V†Š=20V)

V•Š, GATE-EMITTER VOLTAGE [V]

I†, C

OLLE

CTO

R C

UR

RE

NT [A

]

2 4 6 8 10 120

15

30

45TÎ=25°CTÎ=175°C

Figure 8.Figure 8.Figure 8.Figure 8. Typical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageas a function of junction temperatureas a function of junction temperatureas a function of junction temperatureas a function of junction temperature(V•Š=15V)

TÎ, JUNCTION TEMPERATURE [°C]

V†Š

ñÙÈÚò,

CO

LLE

CTO

R-E

MIT

TE

R S

ATU

RA

TIO

N [A

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0I†=7.5AI†=15AI†=30A

6


Rev. 2.1 2009-11-25

Figure 9.Figure 9.Figure 9.Figure 9. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofcollector currentcollector currentcollector currentcollector current(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)

I†, COLLECTOR CURRENT [A]

t, S

WIT

CH

ING

TIM

ES

[ns]

0 5 10 15 20 25 3010

100

1000tÁñÓËËòtË

Figure 10.Figure 10.Figure 10.Figure 10. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofgate resistorgate resistorgate resistorgate resistor(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, I†=15A, test circuit in Fig. E)

R•, GATE RESISTOR [Â]

t, S

WIT

CH

ING

TIM

ES

[ns]

10 20 30 40 5010

100


Figure 11.Figure 11.Figure 11.Figure 11. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofjunction temperaturejunction temperaturejunction temperaturejunction temperature(ind. load, V†Š=600V, V•Š=15/0V,I†=15A, R•=14,6Â, test circuit in Fig. E)


t, S

WIT

CH

ING

TIM

ES

[ns]

25 50 75 100 125 150 17510

100


Figure 12.Figure 12.Figure 12.Figure 12. Gate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(I†=0.4mA)


V•Šñ

ÚÌò,

GA

TE

-EM

ITTE

R T

HR

ES

HO

LD

VO

LTA

GE

[V

]

0 25 50 75 100 125 150 1752

3

4

5

6

7min.typ.max.

7


Rev. 2.1 2009-11-25

Figure 13.Figure 13.Figure 13.Figure 13. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector currentfunction of collector currentfunction of collector currentfunction of collector current(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)

I†, COLLECTOR CURRENT [A]

E, S

WIT

CH

ING

EN

ER

GY

LO

SS

ES

[m

J]

0 5 10 15 20 25 300.0

0.5

1.0

1.5

2.0

2.5EÓËË

Figure 14.Figure 14.Figure 14.Figure 14. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of gate resistorfunction of gate resistorfunction of gate resistorfunction of gate resistor(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, I†=15A, test circuit in Fig. E)

R•, GATE RESISTOR [Â]

E, S

WIT

CH

ING

EN

ER

GY

LO

SS

ES

[m

J]

10 20 30 40 501.0

1.1

1.2

1.3

1.4

1.5

1.6EÓËË

Figure 15.Figure 15.Figure 15.Figure 15. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(ind load, V†Š=600V, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)


E, S

WIT

CH

ING

EN

ER

GY

LO

SS

ES

[m

J]

25 50 75 100 125 150 1750.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3EÓËË

Figure 16.Figure 16.Figure 16.Figure 16. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltage(ind. load, TÎ=175°C, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)


E, S

WIT

CH

ING

EN

ER

GY

LO

SS

ES

[m

J]

400 500 600 700 800 900 10000.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0EÓËË

8


Rev. 2.1 2009-11-25

Figure 17.Figure 17.Figure 17.Figure 17. Typical turn off switching energy loss forTypical turn off switching energy loss forTypical turn off switching energy loss forTypical turn off switching energy loss forsoft switchingsoft switchingsoft switchingsoft switching(ind load, V†Š=600V, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)

dv/dt, VOLTAGE SLOPE [V/µs]

E, S

WIT

CH

ING

EN

ER

GY

LO

SS

ES

[m

J]

100 1000 1E+40.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4TÎ=25°CTÎ=175°C

Figure 18.Figure 18.Figure 18.Figure 18. Typical gate chargeTypical gate chargeTypical gate chargeTypical gate charge(I†=15A)

Q•Š, GATE CHARGE [nC]

V•Š,

GA

TE

-EM

ITTE

R V

OLTA

GE

[V

]

0 25 50 75 100 125 150 1750

2

4

6

8

10

12

14

16240V960V

Figure 19.Figure 19.Figure 19.Figure 19. Typical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofcollector-emitter voltagecollector-emitter voltagecollector-emitter voltagecollector-emitter voltage(V•Š=0V, f=1MHz)


C, C

AP

AC

ITA

NC

E [pF]

0 10 20 3010

100

1000

CÍÙÙCÓÙÙCØÙÙ

Figure 20.Figure 20.Figure 20.Figure 20. IGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedance(D=tÔ/T)

tÔ, PULSE WIDTH [s]

ZÚÌœ†

, TR

AN

SIE

NT T

HE

RM

AL IM

PE

DA

NC

E [K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: rÍ[K/W]: Í[s]:

1 4.6E-3 2.4E-5

2 0.1431 3.3E-4

3 0.2097 3.1E-3

4 0.2185 0.01636424

5 0.01204762 0.1753518

6 1.9E-3 1.713276

7 2.1E-4 4.662402 τ

9


Rev. 2.1 2009-11-25

Figure 21.Figure 21.Figure 21.Figure 21. Diode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as afunction of pulse widthfunction of pulse widthfunction of pulse widthfunction of pulse width(D=tÔ/T)

tÔ, PULSE WIDTH [s]

ZÚÌœ†

, TR

AN

SIE

NT T

HE

RM

AL IM

PE

DA

NC

E [K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: rÍ[K/W]: Í[s]:

1 4.6E-3 2.4E-5

2 0.1431 3.3E-4

3 0.2097 3.1E-3

4 0.2185 0.01636424

5 0.012 0.1753518

6 1.9E-3 1.713276

7 2.1E-4 4.662402 τ

Figure 22.Figure 22.Figure 22.Figure 22. Typical diode forward current as aTypical diode forward current as aTypical diode forward current as aTypical diode forward current as afunction of forward voltagefunction of forward voltagefunction of forward voltagefunction of forward voltage

VŒ, FORWARD VOLTAGE [V]

IŒ, FO

RW

AR

D C

UR

RE

NT [A

]

0 1 2 30

15

30

45TÎ=25°CTÎ=175°C

Figure 23.Figure 23.Figure 23.Figure 23. Typical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature


VŒ,

FO

RW

AR

D V

OLTA

GE

[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5I†=7.5AI†=15AI†=30A

10


Rev. 2.1 2009-11-25

PG-TO247HC-3 (PG-TOHC-3)

11


Rev. 2.1 2009-11-25

12


Rev. 2.1 2009-11-25

Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2009 Infineon Technologies AGAll Rights Reserved.

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InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question,please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-supportdevices or systems only with the express written approval of Infineon Technologies, if a failure of such components canreasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness ofthat device or system. Life support devices or systems are intended to be implanted in the human body or to support and/ormaintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or otherpersons may be endangered.

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IGBT H15R1203