FQP13N50C - 500V, 13A

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1/10

2003 Fairchild Semiconductor Corporation Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C

Q F E T TM

FQP13N50C/FQPF13N50C500V N-Channel MOSFET

General DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology.

Features 13A, 500V, R DS(on) = 0.48 @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability

Absolute Maximum Ratings TC = 25C unless otherwise noted

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol Parameter FQP13N50C FQPF13N50C Units

VDSS Drain-Source Voltage 500 VID Drain Current - Continuous (T C = 25C) 13 13 * A

- Continuous (T C = 100C) 8 8 * AIDM Drain Current - Pulsed (Note 1) 52 52 * AVGSS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 860 mJIAR Avalanche Current (Note 1) 13 AEAR Repetitive Avalanche Energy (Note 1) 19.5 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsP D Power Dissipation (T C = 25C) 195 48 W

- Derate above 25C 1.56 0.39 W/CTJ , TSTG Operating and Storage Temperature Range -55 to +150 C

TLMaximum lead temperature for soldering purposes,1/8 " from case for 5 seconds 300 C

Symbol Parameter FQP13N50C FQPF13N50C UnitsRJC Thermal Resistance, Junction-to-Case 0.64 2.58 C / WRJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C / WRJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C / W

TO-220FQP SeriesG SD

TO-220FFQPF Series

G SD

!!! !

!!! !

!!! !

!!! !

!!! !

!!! !

S

D

G

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Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C

2003 Fairchild Semiconductor Corporation

Electrical Characteristics TC = 25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L =6.0 mH, I AS = 13A, V DD = 50V, R G = 25 , Starting T J = 25C3. ISD 13A, di/dt 200A/ s, V DD BVDSS, Starting T J = 25C4. Pulse Test : Pulse width 300 s, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 A 500 -- -- VBV

DSS / TJ Breakdown Voltage TemperatureCoefficient ID = 250 A, Referenced to 25C -- 0.5 -- V/C

IDSSZero Gate Voltage Drain Current

VDS = 500 V, V GS = 0 V -- -- 1 AVDS = 400 V, T C = 125C -- -- 10 A

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, V DS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, V DS = 0 V -- -- -100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 A 2.0 -- 4.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, I D = 6.5 A -- 0.39 0.48

gFS Forward Transconductance VDS = 40 V, I D = 6.5 A (Note 4) -- 15 -- S

Dynamic CharacteristicsC iss Input Capacitance VDS = 25 V, V GS = 0 V,f = 1.0 MHz

-- 1580 2055 pFCoss Output Capacitance -- 180 235 pFCrss Reverse Transfer Capacitance -- 20 25 pF

Switching Characteristicstd(on) Turn-On Delay Time VDD = 250 V, I D = 13 A,

RG = 25

(Note 4, 5)

-- 25 60 nstr Turn-On Rise Time -- 100 210 nstd(off) Turn-Off Delay Time -- 130 270 nstf Turn-Off Fall Time -- 100 210 nsQg Total Gate Charge VDS = 400 V, I D = 13 A,

VGS = 10 V (Note 4, 5)

-- 43 56 nCQgs Gate-Source Charge -- 7.5 -- nCQgd Gate-Drain Charge -- 18.5 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 13 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 13 A -- -- 1.4 Vtrr Reverse Recovery Time VGS = 0 V, I S = 13 A,

dIF / dt = 100 A/ s (Note 4)-- 410 -- ns

Q rr Reverse Recovery Charge -- 4.5 -- C

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Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C


10-1 100 1010

500

1000

1500

2000

2500

3000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

Notes ;

1. VGS = 0 V2. f = 1 MHzCrss

Coss

Ciss

C

a p a c

i t a n c e

[ p F ]

VDS, Drain-Source Voltage [V]

0 10 20 30 40 500

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

Note: I D = 13A

V G S , G

a t e -

S o u r c e

V o l

t a g e

[ V ]

QG, Total Gate Charge [nC]

Typical Characteristics

0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

101

150 Notes :

1. VGS = 0V2. 250 s Pulse Test

25

I D R , R

e v e r s e

D r a

i n C u r r e n t

[ A ]

VSD, Source-Drain voltage [V]

0 5 10 15 20 25 30 35

0.5

1.0

1.5

VGS = 20V

VGS = 10V

Note : T J = 25

R D S ( O N )

[ ] ,

D r a

i n - S o u r c e

O n -

R e s

i s t a n c e

ID, Drain Current [A]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage

Figure 4. Body Diode Forward VoltageVariation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1 100 10110-1

100

101

VGSTop : 15.0 V

10.0V8.0V7.0V6.0V5.5V5.0V

Bottom: 4.5 V

Notes :1. 250 s Pulse Test2. TC = 25

I D , D

r a i n C u r r e n t

[ A ]


2 4 6 8 1010-1

100

101

150oC

25oC-55oC

Notes :1. VDS = 40V2. 250 s PulseTest

I D , D


[ A ]

VGS, Gate-Source Voltage [V]

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Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C


-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :1. VGS = 10V2. ID = 6.5A

R D S ( O N ) , (

N o r m a l

i z e d

)

D r a

i n - S o u r c e

O n -

R e s

i s t a n c e

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :1. VGS=0V2. ID =250 A

B V

D S S , (

N o r m a l

i z e d

)

D r a

i n - S o u r c e

B r e a k

d o w n

V o l

t a g e

TJ, Junction Temperature [oC]

100 101 102 10310-1

100

101

102

100 ms

10 s

DC

10 ms1 ms

100 s

Operation in This Areais Limited by R DS(on)

Notes :1. TC = 25

oC2. T J = 150

oC3. Single Pulse

I D , D


[ A ]


100 101 102 10310-2

10-1

100

101

102

100 ms

10 s

DC

10 ms1 ms

100 s

Operation in This Areais Limitedby R DS(on)

Notes :1. TC = 25

oC2. TJ = 150

oC3. Single Pulse

I D , D


[ A ]


Typical Characteristics (Continued)

Figure 9-1. Maximum Safe Operating Areafor FQP13N50C

Figure 10. Maximum Drain Currentvs Case Temperature

Figure 7. Breakdown Voltage Variationvs Temperature

Figure 8. On-Resistance Variationvs Temperature

Figure 9-2. Maximum Safe Operating Areafor FQPF13N50C

25 50 75 100 125 1500

2

4

6

8

10

12

14

I D , D r a

i n C u r r e n t

[ A ]

TC, Case Temperature [ ]

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Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C


Typical Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FQP13N50C

Figure 11-2. Transient Thermal Response Curve for FQPF13N50C

1 0 -5 10 -4 1 0 -3 1 0 -2 10 -1 10 0 1 0 1

10 -2

10 -1

10 0

N o t e s :1. Z JC ( t ) = 0 . 6 4 /W M a x .2 . D u t y F a c t o r , D = t 1 /t 23. T JM - T C = P DM * Z JC (t )

s i n g l e p u l s e

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

Z

J C ( t

) , T h e r m a

l R e s p o n s e

t1 , S q u a r e Wa v e P u l s e D u r a t i o n [s e c ]

1 0 -5 10 -4 1 0 -3 1 0 -2 10 -1 10 0 1 0 1

10 -2

10 -1

10 0

N o t e s :1. Z JC ( t ) = 2 . 5 8 /W M a x .2 . D u t y F a c t o r, D = t 1 /t 23. T JM - T C = P DM * Z JC (t)

s i n g l e p u l s e

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

Z J C ( t

) , T h e r m a

l R e s p o n s e

t1 , S q u a r e Wa v e P u l s e D u r a t i o n [s e c ]

t1

P DM

t2

t1

P DM

t2

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Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C


Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10VQ g

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

Charge

VGS

10VQ g

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

EAS = L IAS2----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----21EAS = L IAS2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

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Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C


Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Typeas DUT

VGS dv/dt controlled by R G ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Typeas DUT

VGS dv/dt controlled by R G ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

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Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C


Mechanical Dimensions

Dimensions in Millimeters

TO - 220

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Rev. A, April 2003

F QP 1 3 N 5 0 C / F QP F 1 3 N 5 0 C


Package Dimensions (Continued)

(7.00) (0.70)

MAX1.47

( 3 0 )

#1

3 . 3

0

0 . 1

0

1 5

. 8 0

0 . 2

0

1 5

. 8 7

0

. 2 0

6 . 6

8

0 . 2

0

9 . 7

5

0 . 3

0

4 . 7

0

0 . 2

0

10.16 0.20

(1.00x45 )

2.54 0.20

0.80 0.10

9.40 0.20

2.76 0.200.35 0.10

3.18 0.10

2.54TYP[2.54 0.20 ]

2.54TYP[2.54 0.20 ]

0.50+0.10 0.05

TO-220F

Dimensions in Millimeters

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DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or InDesign

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improve

design.No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Rev. I2

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FQP13N50C - 500V, 13A