20
1 of 20 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Functional Block Diagram RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Ordering Information V_BIAS VREF VCC1 RF IN RF OUT/VCC2 RF OUT/VCC2 RF OUT/VCC2 RF OUT/VCC2 1 2 3 4 8 7 6 5 PACKAGE BASE GND Bias Circuit RF3806 GaAs HBT PRE-DRIVER AMPLIFIER The RF3806 is a GaAs power amplifier, specifically designed for linear applications. Using a highly reliable GaAs HBT fabrication process, this high-performance two-stage amplifier achieves high output power over a broad frequency range. An evaluation board is available to address UMTS2100 applications. Features 4W Output Power High Linearity 1500MHz to 2200MHz Oper- ation 5V to 8V Supply with Adjust- able Bias Applications GaAs HBT Linear Amplifier Power Amplifier Stage for Commercial Wireless Infra- structure (DCS, PCS, UMTS) RF3806 GaAs HBT Pre-Driver Amplifier RF3806PCK-415 Fully Assembled Evaluation Board - UMTS2100 Rev A4 DS071029 RF3806GaAs HBT Pre-Driver Amplifier RoHS Compliant & Pb-Free Product Package Style: AlN

Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

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Page 1: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

1 of 20

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBTGaAs MESFET

SiGe BiCMOSSi BiCMOSSiGe HBT

GaAs pHEMTSi CMOSSi BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Ordering Information

V_BIAS

VREF

VCC1

RF IN RF OUT/VCC2

RF OUT/VCC2

RF OUT/VCC2

RF OUT/VCC21

2

3

4

8

7

6

5

PACKAGE BASE

GND

BiasCircuit

RF3806GaAs HBT PRE-DRIVER AMPLIFIER

The RF3806 is a GaAs power amplifier, specifically designed for linearapplications. Using a highly reliable GaAs HBT fabrication process, thishigh-performance two-stage amplifier achieves high output power over abroad frequency range. An evaluation board is available to addressUMTS2100 applications.

Features4W Output PowerHigh Linearity1500MHz to 2200MHz Oper-ation5V to 8V Supply with Adjust-able Bias

ApplicationsGaAs HBT Linear AmplifierPower Amplifier Stage for Commercial Wireless Infra-structure (DCS, PCS, UMTS)

RF3806 GaAs HBT Pre-Driver AmplifierRF3806PCK-415 Fully Assembled Evaluation Board - UMTS2100

Rev A4 DS071029

RF3806GaAs HBT Pre-Driver Amplifier

RoHS Compliant & Pb-Free ProductPackage Style: AlN

Page 2: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

2 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Absolute Maximum Ratings

Parameter Rating UnitSupply Voltage (VCC and VBIAS) 8 V

DC Supply Current 2870 mA

Maximum Input Power 23 dBm

Operating Ambient Temperature +85 °C

Storage Temperature +125 °C

ParameterSpecification

Unit ConditionMin. Typ. Max.

Overall - UMTS2100VCC=8V

Frequency 2110 2170 MHz IREF=60mA, VCC=VBIAS=VREF=8V, Temp=+25°C

P1dB 35 36 37 dBm Performance with impedance match as per UMTS evaluation board

Gain (S21) 17 18 19 dB

Input Return Loss (S11) -12 dB

Output Return Loss (S22) -6 dB

Two-Tone SpecificationOIP3 47 dBm 23dBm/tone

Power SupplyPower Supply Voltage 8 V

Supply Current (ICC+IBIAS) 660 730 800 mA ICCQ

Power Down Current 50 μA VREF=0V, VCC=VBIAS=8V

VCC=6V

Frequency 2110 2170 MHz IREF=60mA, VCC=VBIAS=VREF=6V, Temp=+25°C

P1dB 34.5 dBm Performance with impedance match as per UMTS evaluation board

Gain (S21) 18 dB

Two-Tone SpecificationOIP3 46 dBm 21dBm/tone

Power SupplyPower Supply Voltage 6 V

Supply Current (ICC+IBIAS) 718 mA ICCQ

VCC=5V

Frequency 2110 2170 MHz IREF=60mA, VCC=VBIAS=VREF=5V, Temp=+25°C

P1dB 33 dBm Performance with impedance match as per UMTS evaluation board

Gain (S21) 18.5 dB

Two-Tone SpecificationOIP3 45 dBm 20dBm/tone

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor-mance or functional operation of the device under Absolute Maximum Rating condi-tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli-cation circuitry and specifications at any time without prior notice.

Page 3: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

3 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

ParameterSpecification

Unit ConditionMin. Typ. Max.

Power SupplyPower Supply Voltage 5 V

Supply Current (ICC+IBIAS) 707 mA ICCQ

Overall - PCS1900VCC=8V

Frequency 1930 1990 MHz IREF=60mA, VCC=VBIAS=VREF=8V, Temp=+25°C

P1dB 37 dBm Performance with impedance match as per DCS/PHS/PCS low power linear application schematic

Gain (S21) 18 dB

Input Return Loss (S11) -14 dB

Output Return Loss (S22) -8 dB

Two-Tone SpecificationOIP3 52 dBm 23dBm/tone

Power SupplyPower Supply Voltage 8 V

Supply Current (ICC+IBIAS) 660 730 800 mA ICCQ

Power Down Current 50 μA VREF=0V, VCC=VBIAS=8V

VCC=6V

Frequency 1930 1990 MHz IREF=60mA, VCC=VBIAS=VREF=6V, Temp=+25°C

P1dB 35 dBm Performance with impedance match as per DCS/PHS/PCS low power linear application schematic

Gain (S21) 18 dB

Two-Tone SpecificationOIP3 49 dBm 21dBm/tone

Power SupplyPower Supply Voltage 6 V

Supply Current (ICC+IBIAS) 713 mA ICCQ

VCC=5V

Frequency 1930 1990 MHz IREF=60mA, VCC=VBIAS=VREF=5V, Temp=+25°C

P1dB 33.5 dBm Performance with impedance match as per DCS/PHS/PCS low power linear application schematic

Gain (S21) 18.5 dB

Two-Tone SpecificationOIP3 49 dBm 20dBm/tone

Power SupplyPower Supply Voltage 5 V

Supply Current (ICC+IBIAS) 707 mA ICCQ

Page 4: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

4 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Package Drawing

Pin Function Description Interface Schematic1 VCC1 For input stage.

2 VREF Control for active bias. See “Theory of Operation” section.

3 RF IN For input stage. Requires RF match and DC block.

4 VBIAS Supply for active bias.

5 RF OUT/VCC2

For output stage. Requires RF match, bias feed and DC block.

6 RF OUT/VCC2

See pin 5.

7 RF OUT/VCC2

See pin 5.

8 RF OUT/VCC2

See pin 5.

Pkg Base

GND Must be soldered to ground pad through as short a path as possible. This path also forms the thermal path for minimum TJ.

0.005 A 0.0025

-A-

0.024

0.1560.025

R.008

0.028TYP0.020

7 PL

0.050TYP

Dimensions in inches.

0.180REF

0.198

0.200 REF

0.236

Shaded circle designates pin 1 location.

Pin 1

0.050REF 0.0780

MAX

Page 5: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

5 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Application Schematic - DCS/PHS/PCS1800MHz to 2025MHz

Low Power Linear Operation

This schematic for low power linear operation:21dBm<POUT<27dBm, 5V<VCC<8V. Bias R seen above for 8V and 60mA IREF. See biasing table for setting resistance atother supply voltages.

Application Schematic - DCS/PCS1800MHz to 1990MHzHigh Power Operation

This schematic for high power operation:POUT>27dBm, 5V<VCC<8V. Bias R seen above for 8V and 41mA IREF. See biasing table for setting resistance at other supplyvoltages.

5.6 pF

270 Ω 270 Ω

1

2

3

4

8

7

6

5

BiasCircuit

270 Ω 270 Ω

VREF

*Open

10 pF

Open

VBIAS

1000 pF10 pF 0.1 μF 10 μF+

24 nH

10 pF0.1 μF 10 μF+ 0 Ω

VCC

6.8 nH 1000 pF10 μF

+0.1 μF1000 pF10 pF

RF IN

* PHS/PCS: 1.8 pF DCS: 2.4 pF

Open

L224 nH

Open Open

1000 pF 10 pF0.1 μF

10 pF 1000 pF 0.1 μF+

10 μF

+10 μF

Open

7.5 pF

Open

RF OUT

3.3 pF Open

5.6 pF

Open

C305.1 pF

R7430 Ω

R8430 Ω

1

2

3

4

8

7

6

5

BiasCircuit

R4390 Ω

R5390 Ω

VREF

C201.5 pF

C19Open

C285.1 pF

C18Open

VBIASC44

1000 pFC49

10 pFC48

0.1 μFC45

10 μF+

L424 nH

C3510 pF

C330.1 μF

C3410 μF

+

R100 Ω

VCC

C27Open

C4010 μF

+C410.1 μF

C391000 pF

C3810 pF

RF IN C9 Open

L224 nH

C10Open

C18Open

C51000 pF

C710 pF

C110.1 μF

C4810 pF

C401000 pF

C510.1 μF

+C5010 μF

+C810 μF

C136.8 pF

C150.5 pF

RF OUTC29

2.4 pFC12

Open

C142.7 pF

C81 pF

50 Ω μstrip

50 Ω μstrip

Page 6: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

6 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Evaluation Board Schematic - UMTS2100

This eval board for low power linear operation: 21dBm<POUT<27dBm, 5 V<VCC<8V. Bias R seen above for 8V and 60mA IREF.See biasing table for setting resistance at other supply voltages.

RF3806 Biasing TableThe resistor values shown below are for varied VCC/ICQ conditions. Biasing for higher quiescent current will give increased lin-earity. “R_Bias”=equivalent R in line with VREF (see values on evaluation board schematic: R4, R5, R7, R8).

Max allowable IREF=60mA.

VCC VREF VBIAS RBIAS (at VREF) IREF Typical ICQ

Volt Volt Volt Ohm mA mA

8 8 8 62 60 730

7 7 7 45 60 726

6 6 6 28.5 60 718

5 5 5 11.5 60 707

8 8 8 80.5 50 676

7 7 7 60 50 670

6 6 6 40 50 663

5 5 5 20 50 649

8 8 8 105 41 623

7 7 7 80.5 41 614

6 6 6 56 41 601

5 5 5 31.5 41 584

In IREF=60mA case, calculated RBIAS was rounded up to nearest 0.5Ω.This to keep IREF at or slightly below 60mA max.

C309.1 pF

R7270 Ω

R8270 Ω

1

2

3

4

8

7

6

5

BiasCircuit

R4270 Ω

R5270 Ω

C3810 pF

C391000 pF

C410.1 μF

VREF

50 Ω μstripJ1RF IN

C202.0 pF

C19Open

C289.1 pF

C18Open

VBIASC44

1000 pFC43

10 pFC46

0.1 μFC45

10 μF+

C4010 μF

+ C271000 pF

L424 nH

C3510 pF

C330.1 μF

C3410 μF

+

R100 Ω

C26Open

L224 nH

C10Open

C51000 pF

C710 pF

C110.1 μF

C4810 pF

C491000 pF

C510.1 μF

+C5010 μF

+C610 μF

VCC

C16Open

J2RF OUT

50 Ω μstrip

C139.1 pF

C293.3 pF

C12Open

C8Open

C149.1 pF

C15Open

L915 nH

Page 7: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

7 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Evaluation Board LayoutBoard Size 2.0” x 2.0”

Board Thickness 0.020”, Board Material Rogers 4350

Page 8: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

8 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Theory of Operation

General biasing considerations can be described using RF3806 UMTS evaluation board as a reference. In actual system,VCC=VBIAS=VREF can be tied together when PA is to remain biased on at all times. For non-constant operation, VCC is tied toVBIAS, and VREF used for turn-on preceding transmit. Table is provided in data sheet for adjusting IREF to desired bias current forvarious supply voltage levels (more detailed discussion below).

RF3806 can be used in frequency bands ranging from 1500MHz to 2200MHz. Depending on specific application, the follow-ing parameters and their trade-offs can be considered: linearity, average output power, signal modulation/peak to averageratio (PAR), efficiency, dissipated power, junction temperature (Tj), and wear out MTTF. Looking at two distinct examples willdemonstrate how the above mentioned parameters are taken into account. Note that much of the discussed performance canbe found in the data sheet area showing graphs.

First, consider a UMTS pico cell base station transmitter (case 1). Here RF3806 fills the role of final PA, operating from21dBm-26dBm POUT. VCC can be run from 5V to 8V. Likewise, bias resistance on VREF line can be set to obtain IREF rangingfrom 41mA-60mA. The choice of voltage supply and bias is determined by required W-CDMA ACPR spec, desired POUT, and sig-nal PAR. For instance, consider the following: POUT=26dBm, frequency=2110MHz-2170MHz, signal=W-CDMA test model I64 DPCH, ACPR requirement over temperature=-45dBc at 5MHz offset. The operating condition here (see data sheet graphsection) would be VCC=8V and IREF=60mA, using impedance match found on UMTS Evaluation Board. For a lower outputpower requirement, IREF is kept at 60mA, and VCC reduced to a level below 8V. Sufficient linearity can be obtained at lowerPOUT, while the decrease in dissipated power yields a lower junction temperature and enhanced MTTF. For thermal consider-ations, refer to graphs provided for thermal resistance, junction temperature, and MTTF (these three graphs based on RF3806thermal scan and process reliability data).

For the second example (case 2), consider a higher power application, where POUT=34dBm and linearity requirement is sub-stantially reduced from that seen in above example. For this application, we might run IREF=41mA with VCC=8V. RF3806 out-put load line would be set for maximum efficiency and compression point. The result is a transmit PA which obtains outputpower spec, while providing high enough efficiency to keep Tj within desired range. Running IREF=41mA avoids unnecessarypower dissipation, as higher IREF is used only in lower power case for linearity enhancement. A DCS/PCS application schematicis provided in data sheet for higher power applications, along with corresponding information in section containing graphs.UMTS evaluation board can be converted to the application schematic, with minor changes to input, output, and interstagematches (interstage @VCC1 pin). Also, bias resistors at VREF are scaled for lower IREF=41mA. EDGE ACP plots are provided inthe graph section. Note that the matching also covers transmit bands for 1850-1910 CDMA. As a result, this converted appli-cation board could also be considered for CDMA booster/repeater.

As mentioned above, junction temperature is an important consideration when operating at maximum VCC (8V). The mostdemanding scenario, case 1 above, will be considered here as an illustration. In the data sheet graph section, refer to graphsof Tj vs POUT, RTH vs POUT, and RF3806 wear out MTTF vs Tj. During thermal scan, RF3806 eval board is affixed to a large, tem-perature controlled stage, held at ambient. The device is etched open, such that thermal image of die can be taken. Referencetemperature is measured at evaluation board to stage interface by thermocouple, placed through a thin groove such that itmakes contact with underside eval board GND plane (directly beneath RF3806). Thermocouple measures "reference tempera-ture", from which RTH_JREF (junction to reference) is determined. Evaluation board thermal resistance, RTH_BOARD, has beenmodeled at 1°C/W. Knowing these two values allows us to calculate junction to case thermal resistance ofRF3806=RTH_JC=RTH_JREF-RTH_BOARD=RTH_JREF-1 (see graph). Thus, RTH_JC is defined as thermal resistance from junction toGND slug of device.

Page 9: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

9 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

At POUT=26dBm, see that Tj=160°C for ambient (stage) temperature=85°C. At this condition, temperature of case (GNDslug) is calculated:

TCASE=TREF+PDISS*(RTH_BOARD)=94°C+(6.191W)*1°C/W=100.2°C. Note that TREF was elevated to 94°C when stage wasset at 85°C. Thus, thermal resistance results can be subject to where one defines "ambient".

Using MTTF curve, it is seen that MTTF=80 years for 160°C junction temperature. In a design where higher MTTF is desired,one option would be to run RF3806 at reduced VCC. Viewing UMTS ACP curves in graph section of data sheet, VCC=6V/25dBmshows equivalent linearity to VCC=8V/26dBm. Reducing POUT specification to 25dBm will allow for higher MTTF while operat-ing at VCC=6V. A practical approximation to Tj at adjusted operating condition can be made. Assume TCASE equal to 100.2°C,as with VCC=8V and 26dBm out (conservative estimate). Dissipated power for 6V/25dBm/85°C is known from test data tobe 4.385W. From data sheet graph, RTH_JC=9.95°C/W. Tj is approximated to be:

Tj=100.2+4.385*9.95=144°C

MTTF curve shows >450 years for this Tj. As mentioned, the above analysis is not exact, but does give us a practical way to getan idea of where a condition will fall in terms of Tj and MTTF. Required data to do the calculation: data sheet curves and evalu-ation board test in temperature chamber (to determine dissipated power).

Note that projected Tj vs Pout curves are included with DCS/PCS data (1800MHz-1990MHz high power application sche-matic), to illustrate the same type of trade offs between operating at 6V and 8V. These curves are approximate, obtained withthe following method (called out in above paragraph):

1. UMTS evaluation board was converted to matching seen on DCS/PCS application schematic (changes @ input/out-put/interstage/bias resistors at VREF).

2. Evaluation board was run in oven at 85°C ambient.3. Dissipated power was calculated at each data point. Using RTH_JREF from data sheet curve, temperature delta to RF3806

junction (Tj) can be obtained. Tj was then plotted, and can be applied to MTTF vs Tj curve.

Finally, a description is included here for running two RF3806 in parallel with hybrid combiners. This approach enables designto achieve substantial linearity enhancement for a given POUT, while maintaining low die temperature. In this example, hybridcouplers (combiners) from Anaren (part number XC2100E-03) are used with 2 RF3806 UMTS evaluation boards. The bias con-dition is VCC=6V, IREF=60mA. ACP performance vs temperature is shown in graph section, which can be compared to that forsingle PA.

RFMD can be contacted to obtain RF3806 qualification report, which adheres to demanding infrastructure standards.

Page 10: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

10 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Small Signal GainUMTS Band (Data taken on UMTS Evaluation Board)

15.0

15.5

16.0

16.5

17.0

17.5

18.0

18.5

19.0

19.5

20.0

2100.0 2110.0 2120.0 2130.0 2140.0 2150.0 2160.0 2170.0 2180.0

Freq (MHz)

Ga

in (d

B)

Vcc = 8 VVcc = 6 VVcc = 5 V

OIP3 versus POUT versus Frequency versus VCC

UMTS Band (Data taken on UMTS Evaluation Board)

44.0

45.0

46.0

47.0

48.0

49.0

50.0

51.0

19.0 20.0 21.0 22.0 23.0 24.0

P_Tone (dBm)

OIP

3 (d

Bm

)

Vcc = 8 V 2110 MHzVcc = 8 V 2140 MHzVcc = 8 V 2170 MHzVcc = 6 V 2110 MHzVcc = 6 V 2140 MHzVcc = 6 V 2170 MHzVcc = 5 V 2110 MHzVcc = 5 V 2140 MHzVcc = 5 V 2170 MHz

OIP3 versus Frequency versus VCC, at 10dB Back-off from OP1dB, UMTS Band (Data taken on UMTS Evaluation Board)

44.0

45.0

46.0

47.0

48.0

49.0

50.0

51.0

2100.0 2110.0 2120.0 2130.0 2140.0 2150.0 2160.0 2170.0 2180.0

Frequency (MHz)

OIP

3 (d

Bm

)

Vcc = 8 VVcc = 6 VVcc = 5 V

OP1dB versus VCC versus FrequencyUMTS Band (Data taken on UMTS Evaluation Board)

32.5

33.0

33.5

34.0

34.5

35.0

35.5

36.0

36.5

37.0

2100.0 2110.0 2120.0 2130.0 2140.0 2150.0 2160.0 2170.0 2180.0

Frequency (MHz)

OP

1dB

(dB

m)

Vcc = 8 VVcc = 6 VVcc = 5 V

W-CDMA ACP versus POUT versus Temperature

Signal=W-CDMA Test Model I 64 DPCH PAR=10.3dB @ 0.01%IREF=60mA VCC=8V (Data taken on UMTS Evaluation Board)

-58.0

-57.0

-56.0

-55.0

-54.0

-53.0

-52.0

-51.0

-50.0

-49.0

-48.0

-47.0

-46.0

-45.0

-44.0

-43.0

-42.0

24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0

POUT (dBm)

AC

P @

5M

Hz

Offs

et (

dBm

)

25 C 2110 MHz 8 V 25 C 2170 MHz 8 V85 C 2110 MHz 8 V85 C 2170 MHz 8 V-40 C 2110 MHz 8 V -40 C 2170 MHz 8 V

W-CDMA ACP versus POUT versus Temperature

Signal=W-CDMA Test Model I 64 DPCH PAR=10.3dB @ 0.01%

IREF=60mA VCC=6V (Data taken on UMTS Evaluation Board)

-63.0-62.0-61.0-60.0-59.0-58.0-57.0-56.0-55.0-54.0-53.0-52.0-51.0-50.0-49.0-48.0-47.0-46.0-45.0-44.0-43.0-42.0-41.0-40.0

22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0

POUT (dBm)

AC

P @

5M

Hz

Offs

et (

dBc)

25C 2110 MHz 6 V25C 2170 MHz 6 V85C 2110 MHz 6 V85 C 2170 MHz 6 V-40 C 2110 MHz 6 V-40 C 2170 MHz 6 V

Page 11: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

11 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

W-CDMA ACP versus POUT versus Temperature

Signal=W-CDMA Test Model I 64 DPCH PAR=10.3dB @ 0.01%

IREF=60mA VCC=5V (Data taken on UMTS Evaluation Board)

-61.0

-60.0-59.0

-58.0

-57.0

-56.0-55.0

-54.0

-53.0

-52.0-51.0

-50.0

-49.0

-48.0-47.0

-46.0

-45.0

-44.0-43.0

-42.0

-41.0

21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0

POUT (dBm)

AC

P @

5M

Hz

Offs

et (

dBc)

25C 2110 MHz 5 V25C 2170 MHz 5 V85C 2110 MHz 5 V85 C 2170 MHz 5 V-40 C 2110 MHz 5 V-40 C 2170 MHz 5 V

Small Signal Gain - PCS Band(Data taken on Eval Board configured as per DCS/PHS/PCS Application Schematic for Low

Power Linear Operation)

15.0

15.5

16.0

16.5

17.0

17.5

18.0

18.5

19.0

19.5

20.0

1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0

Frequency (MHz)

Gai

n (d

B)

Vcc = 8 VVcc = 6 VVcc = 5 V

OIP3 versus POUT versus Freq versus VCC - PCS Band(Data taken on Eval Board configured as per DCS/PHS/PCS Application Schematic for Low

Power Linear Operation)

47.0

48.0

49.0

50.0

51.0

52.0

53.0

54.0

55.0

19.0 20.0 21.0 22.0 23.0 24.0

P_Tone (dBm)

OIP

3 (d

Bm

)

Vcc = 8 V 1930 MHzVcc = 8 V 1960 MHzVcc = 8 V 1990 MHzVcc = 6 V 1930 MHzVcc = 6 V 1960 MHzVcc = 6 V 1990 MHzVcc = 5 V 1930 MHzVcc = 5 V 1960 MHzVcc = 5 V 1990 MHz

OIP3 versus Frequency versus VCC, at 10dB Back-off from OP1dB PCS Band(Data taken on Eval Board Configured as per DCS/PHS/PCS Application Schematic for Low Power

Linear Operation.)

47.0

48.0

49.0

50.0

51.0

52.0

53.0

54.0

55.0

1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0

Frequency (MHz)

OIP

3 (d

Bm

)

Vcc = 8 VVcc = 6 VVcc = 5 V

OP1dB versus VCC versus Freq - PCS Band(Data taken on Eval Board configured as per DCS/PHS/PCS Application Schematic for Low

Power Linear Operation)

33.0

33.5

34.0

34.5

35.0

35.5

36.0

36.5

37.0

37.5

1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0

Frequency (MHz)

OP

1dB

(dB

m)

Vcc = 8 VVcc = 6 VVcc = 5 V

CDMA2K ACP versus POUT versus Temperature, Signal=CDMA2K 9 Channel SR1 PAR=8.5dB @ 0.01% IREF=60mA VCC=8V (Data taken on Eval Board configured as per DCS/PHS/PCS Application

Schematic for low power linear operation)

-80.0

-78.0

-76.0

-74.0

-72.0

-70.0

-68.0

-66.0

-64.0

-62.0

-60.0

-58.0

-56.0

-54.0

-52.0

-50.0

22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0

POUT (dBm)

AC

P @

75

0kH

z O

ffset

(dB

c)

25 C 1930 MHz 8 V 25 C 1990 MHz 8 V85 C 1930 MHz 8 V85 C 1990 MHz 8 V-40 C 1930 MHz 8 V -40 C 1990 MHz 8 V

Page 12: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

12 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

CDMA2K ACP versus POUT versus Temperature, Signal=CDMA2K 9 Channel SR1 PAR=8.5dB @ 0.01% IREF=60mA VCC=6V (Data taken on Eval Board configured as per DCS/PHS/PCS

Application Schematic for low power linear operation)

-80.0

-78.0

-76.0

-74.0

-72.0

-70.0

-68.0

-66.0

-64.0

-62.0

-60.0

-58.0

-56.0

-54.0

-52.0

-50.0

22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0

POUT (dBm)

AC

P @

75

0kH

z (d

Bc)

25C 1930 MHz 6 V25C 1990 MHz 6 V85C 1930 MHz 6 V85 C 1990 MHz 6 V-40 C 1930 MHz 6 V-40 C 1990 MHz 6 V

CDMA2K ACP versus POUT versus Temperature, Signal=CDMA2K 9 Channel SR1 PAR=8.5dB @ 0.01% IREF=60mA VCC=5V (Data taken on Eval Board configured as per DCS/PHS/PCS Application

Schematic for low power linear operation)

-80.0

-78.0

-76.0

-74.0

-72.0

-70.0

-68.0

-66.0

-64.0

-62.0

-60.0

-58.0

-56.0

-54.0

-52.0

-50.0

21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0

POUT (dBm)

AC

P @

750

kHz

Offs

et (

dBc)

25C 1930 MHz 5 V25C 1990 MHz 5 V85C 1930 MHz 5 V85 C 1990 MHz 5 V-40 C 1930 MHz 5 V-40 C 1990 MHz 5 V

DCS/PCS EDGE ACP VCC=8V IREF=41mA(See DCS/PCS High Power Application Schematic, 1800MHz to 1990MHz)

-85.0

-80.0

-75.0

-70.0

-65.0

-60.0

-55.0

-50.0

-45.0

-40.0

-35.0

-30.0

26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0

POUT (dBm)

ED

GE

AC

P (d

Bc)

1800 MHz Vcc = 8 V 200 kHz1800 MHz Vcc = 8 V 400 kHz1800 MHz Vcc = 8 V 600 kHz1880 MHz Vcc = 8 V 200 kHz1880 MHz Vcc = 8 V 400 kHz1880 MHz Vcc = 8 V 600 kHz1930 MHz Vcc = 8 V 200 kHz1930 MHz Vcc = 8 V 400 kHz1930 MHz Vcc = 8 V 600 kHz1990 MHz Vcc = 8 V 200 kHz1990 MHz Vcc = 8 V 400 kHz1990 MHz Vcc = 8 V 600 kHz

DCS/PCS EDGE ACP VCC=6V IREF=41mA(See DCS/PCS High Power Application Schematic, 1800MHz to 1990MHz)

-85.0

-80.0

-75.0

-70.0

-65.0

-60.0

-55.0

-50.0

-45.0

-40.0

-35.0

-30.0

26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0

POUT (dBm)

ED

GE

AC

P (

dBc)

1800 MHz Vcc = 6 V 200 kHz1800 MHz Vcc = 6 V 400 kHz1800 MHz Vcc = 6 V 600 kHz1880 MHz Vcc = 6 V 200 kHz1880 MHz Vcc = 6 V 400 kHz1880 MHz Vcc = 6 V 600 kHz1930 MHz Vcc = 6 V 200 kHz1930 MHz Vcc = 6 V 400 kHz1930 MHz Vcc = 6 V 600 kHz1990 MHz Vcc = 6 V 200 kHz1990 MHz Vcc = 6 V 400 kHz1990 MHz Vcc = 6 V 600 kHz

DCS/PCS OP1dB IREF=41mA(See DCS/PCS High Power Application Schematic, 1800MHz to 1990MHz)

34.0

34.5

35.0

35.5

36.0

36.5

37.0

37.5

38.0

1780.0 1830.0 1880.0 1930.0 1980.0

Frequency (MHz)

OP

1dB

(dB

m)

Vcc = 8 V

Vcc = 6 V

DCS/PCS Projected Junction Temperature at 85°C Ambient(See Theory of Operation section, and DCS/PCS High Power Application Schematic,

1800MHz to 1990MHz) IREF=41mA

130.0132.0134.0136.0138.0140.0142.0144.0146.0148.0150.0152.0154.0156.0158.0160.0162.0164.0166.0168.0170.0172.0174.0

20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0

POUT (dBm)

Tj (

°C)

Vcc = 8 V 1800 MHzVcc = 8 V 1880 MHzVcc = 8 V 1930 MHzVcc = 8 V 1990 MHzVcc = 6 V 1800 MHzVcc = 6 V 1880 MHzVcc = 6 V 1930 MHzVcc = 6 V 1990 MHz

Page 13: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

13 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

UMTS Evaluation Boards in Hybrid Coupler Configuration:Test Signal=W-CDMA Test Model I, 64 DPCH VCC=6V, IREF=60mA

-64.0

-62.0

-60.0

-58.0

-56.0

-54.0

-52.0

-50.0

-48.0

-46.0

-44.0

-42.0

25.0 25.5 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.5

POUT (dBm)

AC

P @

5 M

Hz

(dB

c)

25C 2110 MHz25C 2170 MHz-40C 2110 MHz-40C 2170 MHz85 C 2110 MHz85C 2170 MHz

Wear Out MTTF versus Tj(See Theory of Operation section)

0.0

25.050.0

75.0

100.0

125.0150.0

175.0

200.0

225.0250.0

275.0

300.0

325.0350.0

375.0

400.0

425.0450.0

475.0

500.0

145.0 150.0 155.0 160.0 165.0 170.0 175.0

Tj (°C)

MT

TF

(Yea

rs)

UMTS VCC=8V and IREF=60mA, Tj versus POUT @ 85°C Ambient(See Theory of Operation section for details)

150.0

151.0152.0

153.0

154.0

155.0156.0

157.0

158.0

159.0160.0

161.0

162.0

163.0164.0

165.0

166.0

167.0168.0

169.0

170.0

10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0

POUT (dBm)

Tj (

°C)

UMTS VCC=8V and IREF=60mA, Rth versus POUT @ 85°C Ambient(See Theory of Operation section for details)

9.0

9.5

10.0

10.5

11.0

11.5

12.0

10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0

POUT (dBm)

Rth

(°C

/W)

Rth_jref

Rth_jc

Page 14: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

14 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

DCS/PCS High Power Application Schematic, Typical Response

Page 15: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

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RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

PCS/PHS/PCS Low Power Linear Application Schematic, Typical Response(Input matched for PCS, see data sheet schematic)

Page 16: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

16 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

UMTS Evaluation Board Typical Response

Page 17: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

17 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

UMTS Evaluation Boards in Hybrid Coupler Configuration, Typical Response

Page 18: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

18 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

PCB Design Requirements

PCB Surface FinishThe PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3μinchto 8μinch gold over 180μinch nickel.

PCB Land Pattern RecommendationPCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and testedfor optimized assembly at RFMD; however, it may require some modifications to address company specific assembly pro-cesses. The PCB land pattern has been developed to accommodate lead and package tolerances.

PCB Metal Land Pattern PCB Solder Mask Pattern

Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCBmetal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. Thecenter-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can beprovided in the master data or requested from the PCB fabrication supplier.

A = 1.14 x 0.71B = 1.02 x 0.71 Typ.C = 3.96 x 4.44

Dimensions in mm.

C

A

B

B

B

B

B

B

B

Pin 1

5.93

1.27 Typ.

5.99 Typ.

3.00

3.81 Typ.

1.90

Page 19: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

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RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

A = 1.30 x 0.86B = 1.17 x 0.86 Typ.C = 4.11 x 4.60

Dimensions in mm.

5.93

Pin 1A

CB

B

B

B

B

B

B

1.27 Typ.

5.99 Typ.

3.00

3.81 Typ.

1.90

Page 20: Features - Digi-Key Sheets/RFMD PDFs/RF3806DS.pdfC50 + 10 μF C8 + 10 μF C13 6.8 pF C15 0.5 pF RF OUT C29 2.4 pF C12 Open C14 2.7 pF C8 1 pF 50 Ωμstrip 50 Ωμstrip. 6 of 20 RF3806

20 of 20

RF3806

Rev A4 DS0710297628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].