EPC2014 – Enhancement Mode Power Transistor

eGaN® FET DATASHEET

EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 | | PAGE 1

EPC2014

EPC2014 – Enhancement Mode Power Transistor

VDSS , 40 VRDS(ON) , 16 mWID , 10 A

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment lever-aging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

EPC2014 eGaN® FETs are supplied only inpassivated die form with solder bumps

Applications• HighSpeedDC-DCconversion• ClassDAudio• HardSwitchedandHighFrequencyCircuits

Benefits• UltraHighEfficiency• UltraLowRDS(on)

• UltralowQG

• Ultrasmallfootprint

EFFICIENT POWER CONVERSION

Maximum Ratings

VDSDrain-to-Source Voltage (up to 10,000 5ms pulses at 125° C) 48 V

Drain-to-Source Voltage (Continuous) 40 V

ID

Continuous (TA = 25˚C, θJA = 40) 10A

Pulsed (25˚C, Tpulse = 300 µs) 40

VGS

Gate-to-Source Voltage 6V

Gate-to-Source Voltage -5

TJ Operating Temperature -40 to 150˚C

TSTG Storage Temperature -40 to 150

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Static Characteristics (TJ= 25˚C unless otherwise stated)

BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 125 µA 40 V

IDSS Drain Source Leakage VDS = 32 V, VGS = 0 V 50 100 µA

IGSS

Gate-Source Forward Leakage VGS = 5 V 0.4 2mA

Gate-Source Reverse Leakage VGS = -5 V 0.1 0.5

VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 2 mA 0.7 1.4 2.5 V

RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 5 A 12 16 mΩ

Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)

VSD Source-Drain Forward VoltageIS = 0.5 A, VGS = 0 V, T = 25˚C 1.3

VIS = 0.5 A, VGS = 0 V, T = 125˚C 1.4

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 6.9 ˚C/W

RθJB Thermal Resistance, Junction to Board 32 ˚C/W

RθJA Thermal Resistance, Junction to Ambient (Note 1) 80 ˚C/W

TYP

Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

All measurements were done with substrate shorted to source.

HAL

NEW PRODUCT

http://www.epc-co.com




EPC2014I D

Drai

n Cu

rrent

(A)

VDS – Drain to Source Voltage (V)

40

35

30

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

I D Dr

ain

Curre

nt (A

)

VGS – Gate to Source Voltage (V)

40

25

30

35

20

15

10

5

00 0.5 1 1.5 2 2.5 3 3.5 4

25˚C125˚C

VDS = 3 V

Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics

VGS = 5VGS = 4VGS = 3VGS = 2

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


40

50

30

20

10

01.5 2 2.5 3 3.5 4 4.5

ID = 4 AID = 6 AID = 15 AID = 30 A

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


60

70

50

40

30

20

10

02 2.5 3 3.5 4 4.5 5 5.5

25˚C125˚C

Figure 3: RDS(ON) vs. VGS for Various Drain Current Figure 4: RDS(ON) vs. VGS for Various Temperatures

All measurements were done with substrate shorted to source.

Dynamic Characteristics (TJ= 25˚C unless otherwise stated)

CISS Input Capacitance

VDS = 20 V, VGS = 0 V

300 325

170 pFCOSS Output Capacitance 150

CRSS Reverse Transfer Capacitance 10.2 12.5

QG Total Gate Charge

VDS = 20 V, ID = 10 A

2.48 2.8

nC

QGD Gate to Drain Charge 0.48 0.6

QGS Gate to Source Charge 0.67 0.8

QOSS Output Charge 4.8 6

QRR Source-Drain Recovery Charge 0

VDS = 20 V, V = 0 VGS




EPC2014I SD

– So

urce

to D

rain

Curre

nt (A

)

VSD – Source to Drain Voltage (V)

15

20

10

5

0 0

0.5 1 1.5 2 2.5 3 3.5

Norm

alize

d On-

Stat

e Res

istan

ce –

RDS

(ON)

T – Junction Temperature ( ˚C )

TJ – Junction Temperature ( ˚C )

2.2

2

1.8

1.6

1.4

1.2

1

0.8-20 0 20 40 60 80 100 120 140 160

ID = 10 AVGS = 5 V

I G –

Gate

Curre

nt (A

)

VGS – Gate-to-Source Voltage (V)

.03

.025

.02

.015

.01

.005

00 1 2 3 4 5 6

25˚C125˚C

Norm

alize

d Thr

esho

ld Vo

ltage 1.2

1.4

1.6

1

0.8

0.6

0.4

0.2-20 0 20 40 60 80 100 120 140 160

ID = 2 mA

Figure 7: Reverse Drain-Source Characteristics Figure 8: Normalized On Resistance vs. Temperature

Figure 10: Gate CurrentFigure 9: Normalized Threshold Voltage vs. Temperature

J

25˚C125˚C

VGS = 0 V

V GS –

Gat

e to S

ourc

e Vol

tage

(V)

C – Ca

pacit

ance

(nF)

VDS – Drain to Source Voltage (V)

0.35

0.3

0.25

0.2

0.15

0.1

0.05

00 5 10 15 20 25 30 35 40

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

QG – Gate Charge (nC)

5

4

3

2

1

00 0.5 1 1.5 2 2.5

ID = 10 AVD = 20 V

Figure 5: Capacitance Figure 6: Gate Charge

All measurements were done with substrate shortened to source.




EPC2014

Figure 11: Transient Thermal Response Curves

Figure 12: Safe Operating Area

Duty Factors:

Notes:Duty Factor: D = t1/t2

Peak TJ = PDM x ZθJB x RθJB + TB

PDM

t1

t2

0.50.20.10.050.020.01

Single Pulse

1

0.1

0.01

0.001

0.000110-5 10-4 10-3 10-2 10-1 1 10 100

tp, Rectangular Pulse Duration, seconds

Normalized Maximum Transient Thermal Impedance

Z θJB

, Nor

mal

ized T

herm

al Im

peda

nce

Normalized Maximum Transient Thermal Impedance

tp, Rectangular Pulse Duration, seconds

Duty Factors:

Notes:Duty Factor: D = t1/t2

Peak TJ = PDM x ZθJC x RθJC + TC

PDM

t1

t2

0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

Z θJC

, Nor

mal

ized T

herm

al Im

peda

nce

10-510-6 10-4 10-3 10-2 10-1 1

1

0.1

0.01

0.001

0.1

1

10

100

0.1 1 10 100

I D- D

rain

Curre

nt (A

)

VDS - Drain-Source Voltage (V)

limited by RDS(ON)

TJ = Max Rated, TC = +25°C, Single Pulse

10 µs

100 µs

1 ms

10 ms100 ms/DC




EPC2014

DIE OUTLINESolder Bar View

Side View

B

A

X2e

f

g g

c

d X2 2

3 5

1

4

fX3

815 M

ax

100 +

/- 20

SEATING PLANE

(685

)

DIM MIN Nominal MAX

A 1672 1702 1732B 1057 1087 1117c 834 837 840d 327 330 333e 235 250 265f 195 200 205g 400 400 400

MICROMETERS

2014

YYYY

ZZZZ

Die orientation dot

Gate Pad bump is under this corner

Part Number

Laser Markings

Part #Marking Line 1

Lot_Date CodeMarking line 2

Lot_Date CodeMarking Line 3

EPC2014 2014 YYYY ZZZZ

DIE MARKINGS

TAPE AND REEL CONFIGURATION4mm pitch, 8mm wide tape on 7” reel

7” reel

a

d e f g

c

b

EPC2014 (note 1) Dimension (mm) target min max

a 8.00 7.90 8.30 b 1.75 1.65 1.85

c (see note) 3.50 3.45 3.55 d 4.00 3.90 4.10 e 4.00 3.90 4.10

f (see note) 2.00 1.95 2.05 g 1.5 1.5 1.6

Note 1: MSL 1 (moisture sensitivity level 1) classi�ed according to IPC/JEDEC industry standard.Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole.

Dieorientation

dot

Gatesolder bar is

under thiscorner

Die is placed into pocketsolder bar side down

(face side down)

Loaded Tape Feed Direction




EPC2014

400 400 X2

507 1087

1702

X3 180 180

817

3101

3 5

2

4

1

3 5

2

4

400 400 X2

507 1087

1702

X3 180 180

817

3101

3 5

2

4

1

3 5

2

4

RECOMMENDEDLAND PATTERN (measurements in µm)

Information subject to change without notice.

revised July, 2013

Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others.

eGaN® is a registered trademark of Efficient Power Conversion Corporation.U.S. Patents 8,350,294; 8,404,508; 8,431,960; 8,436,398

Pad no. 1 is Gate

Pad no. 2 is Substrate

Pad no. 3 and 5 are Drain

Padno.4isSource

The land pattern is solder mask definedSolder mask is 10um smaller per side than bump


Documents

EPC2014 – Enhancement Mode Power Transistor