1
New Developments in the Metal Finishing Field Compiled by Anselm Kuhn, Metal Finishing Information Services Ltd. RELEASE ETCH METHOD FOR MICROMACHINED SENSORS U.S. 2004121506 (Motorola Inc.) Gogoi, B. A method for creating a MEMS structure, compris- ing of a substrate, sacrificial layer, and semicon- ductor layer, where the sacrificial layer comprises a first material such as silicon oxide. A MEMS structure is then formed in the semiconductor layer. The structure has first and second elements, which have an exposed portion of the sacrificial layer disposed between them. The first element is then released from the substrate by contacting the exposed portion of the sacrificial layer with a first etchant, typically by way of one or more trenches, after which the first element is reattached to the substrate with a second material. The first element is then released from the substrate by contacting the second material with a second etchant. HOMOGENEOUS COPPER-PALLADIUM ALLOY PLATING FOR ENHANCEMENT OF ELECTRO-MIGRATION RESISTANCE IN INTERCONNECTS U.S. 2004118699 (Applied Materials Inc.) Padhi, D.; Dixit, G.; et al. Method for plating a homogeneous copper-palladium alloy. The plating solution includes a copper ion source at a concentration of between about 0.1 M and 1 M and a palladium ion source at a concentration of between about 0.0005 M and about 0.1 M. PROCESS FOR THE PREPARATION OF METAL- CONTAINING NANOSTRUCTURED FILMS US. 2004118698 Lu, Y.; Wang, D. Metal-containing nanostructured films are prepared by electrodepositing a metal-containing composition within the pores of a mesoporous silica template, as an electro- forming mandrel, to form a metal-containing silica nanocomposite. The nanocomposite is annealed to strengthen the deposited metal-containing composition. The silica is then removed from the nanocomposite, e.g., by dissolving the silica in an etching solution to provide a self-supporting metal-containing nanostructured film. The nanostructured films have a nanowire or nanomesh architecture depending on the pore structure of the mesoporous silica template used to prepare the films. TIN PLATING METHOD U.S. 2004118696 (Shipley Co. LLC) Zhang, W.; Egli, A.; et al. Methods of electrodepositing layers of tin or tin-alloys on a substrate, such as electrolytically treating a sub- strate with a solution comprising a phosphoric acid and a carboxylic acid, and electrodepositing a layer of tin or tin-alloy on a surface of the treated substrate. The methods can provide tin or tin-alloy layers having a reduced tendency to form whiskers. TWO-COAT ELECTROCOAT PAINTING PROCESS US. 2004118695 Chung, D.Y. Two-coat electrocoating process where a substrate is first coated via a cathodic electrodeposition sys- tem and a second coat is subsequently applied via an anodic electrodeposition system, and curing at least two electrodepositable layers simultaneously in a single bake where the primer coating compo- sition is still wet when the second coat is applied. ELECTROCHEMICAL PROCESSING SYSTEM US. 2004118694 (Applied Materials Inc.) Ellwanger, R.C.; Xi, M.; et al. Electrochemical processing system configured to provide multiple chemistries for a single plating process. These are generally delivered to individ- ual plating cells positioned on the processing sys- tem. The individual chemistries may generally be used to conduct direct plating on a barrier layer, alloy plating, plating on a thin seed layer, opti- mized feature fill and bulk fill plating, plating with minimized defects, and/or any other plating process wherein multiple chemistries may be uti- lized to take advantage of the desirable character- istics of each chemistry. PLATING-RINSE-PLATING PROCESS FOR FABRICATING COPPER iNTERCONNECTS US. 2004118692 Chen, L.; Lu, J.P.; et al. An improved copper electroplating process. After the copper seed layer is formed, a first portion of copper film is plated onto the surface of the seed layer. The surface of the first portion of the copper film is then rinsed to equalize the organic adsorption on all sites 56 www.metalfinishing.com

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New Developments in the Metal Finishing Field Compiled by Anselm Kuhn, Metal Finishing Information Services Ltd.

RELEASE ETCH METHOD FOR MICROMACHINED SENSORS

U.S. 2004121506 (Motorola Inc.) Gogoi, B. A method for creating a MEMS structure, compris- ing of a substra te , sacrificial layer, and semicon- ductor layer, where the sacrificial layer comprises a f i rs t ma te r i a l such as silicon oxide. A MEMS s t ruc tu re is then formed in the semiconductor layer. The s t ructure has first and second elements, which have an exposed port ion of the sacrificial layer disposed between them. The first e lement is then released from the subs t ra te by contacting the exposed portion of the sacrificial layer with a first etchant, typically by way of one or more trenches, after which the first element is rea t tached to the subs t ra te with a second material . The first element is then released from the subs t ra te by contacting the second mater ia l with a second etchant.

HOMOGENEOUS COPPER-PALLADIUM ALLOY PLATING

FOR ENHANCEMENT OF ELECTRO-MIGRATION

RESISTANCE IN INTERCONNECTS

U.S. 2004118699 (Applied Materials Inc.) Padhi, D.; Dixit, G.; et al. Method for plating a homogeneous copper-palladium alloy. The plating solution includes a copper ion source at a concentration of between about 0.1 M and 1 M and a palladium ion source at a concentration of between about 0.0005 M and about 0.1 M.

PROCESS FOR THE PREPARATION OF METAL-

CONTAINING NANOSTRUCTURED FILMS

US. 2004118698 Lu, Y.; Wang, D. Metal-containing nanostructured films are prepared by electrodepositing a metal-containing composition within the pores of a mesoporous silica template, as an electro- forming mandrel, to form a metal-containing silica nanocomposite. The nanocomposite is annealed to strengthen the deposited metal-containing composition. The silica is then removed from the nanocomposite, e.g., by dissolving the silica in an etching solution to provide a self-supporting metal-containing nanostructured film. The nanostructured films have a nanowire or nanomesh architecture depending on the pore structure of the mesoporous silica template used to prepare the films.

TIN PLATING METHOD

U.S. 2004118696 (Shipley Co. LLC) Zhang, W.; Egli, A.; et al. Methods of electrodepositing layers of tin or tin-alloys on a substrate, such as electrolytically treating a sub- strate with a solution comprising a phosphoric acid and a carboxylic acid, and electrodepositing a layer of tin or tin-alloy on a surface of the treated substrate. The methods can provide tin or tin-alloy layers having a reduced tendency to form whiskers.

TWO-COAT ELECTROCOAT PAINT ING PROCESS US. 2004118695 Chung, D.Y. Two-coat electrocoating process where a subs t ra te is first coated via a cathodic electrodeposition sys- tem and a second coat is subsequent ly applied via an anodic electrodeposition system, and curing at least two electrodepositable layers s imul taneously in a single bake where the pr imer coating compo- sition is still wet when the second coat is applied.

ELECTROCHEMICAL PROCESSING SYSTEM

US. 2004118694 (Applied Materials Inc.) Ellwanger, R.C.; Xi, M.; et al. Electrochemical processing sys tem configured to provide mult iple chemistr ies for a single plat ing process. These are generally delivered to individ- ual plat ing cells posit ioned on the processing sys- tem. The individual chemistr ies may general ly be used to conduct direct plat ing on a barr ier layer, alloy plating, p la t ing on a thin seed layer, opti- mized fea tu re fill and bu lk fill plat ing, p la t ing with minimized defects, and/or any other plat ing process wherein multiple chemistr ies may be uti- lized to take advantage of the desirable character- istics of each chemistry.

PLATING-RINSE-PLATING PROCESS FOR FABRICATING

COPPER iNTERCONNECTS US. 2004118692 Chen, L.; Lu, J.P.; et al. An improved copper electroplating process. After the copper seed layer is formed, a first portion of copper film is plated onto the surface of the seed layer. The surface of the first portion of the copper film is then rinsed to equalize the organic adsorption on all sites

56 www.metalfinishing.com