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Effect of Tensile and Compression Deformation on the Electronic Structure and Optical Properties of Single-layer Black Phosphorus
Wang Jia-Xin, Wang Ying, Liu Gui-Li, Wei Lin, Zhang Guo-Ying
PII: S0921-4526(19)30655-6DOI: https://doi.org/10.1016/j.physb.2019.411755Reference: PHYSB 411755
To appear in: Physica B: Physics of Condensed Matter
Received Date: 09 March 2019Accepted Date: 05 October 2019
Please cite this article as: Wang Jia-Xin, Wang Ying, Liu Gui-Li, Wei Lin, Zhang Guo-Ying, Effect of Tensile and Compression Deformation on the Electronic Structure and Optical Properties of Single-layer Black Phosphorus, (2019), Physica B: Physics of Condensed Matter https://doi.org/10.1016/j.physb.2019.411755
This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
© 2019 Published by Elsevier.
Funding: This work was supported by the National Natural Science Foundation of China [Grant Number
51371049] and the Natural Science Foundation of Liaoning Province [Grant Number 20102173].
†Corresponding author E-mail: [email protected]
Adress:No.111 Shenliao Westroad Economic and Technological Development District Shenyang, Liaoning PR ChinaPhone number:+86-18940216198
Effect of Tensile and Compression Deformation on the
Electronic Structure and Optical Properties of Single-layer
Black Phosphorus
Wang Jia-Xin Wang Ying† Liu Gui-Li Wei Lin Zhang Guo-Ying
(College of architecture and civil engineering,Shenyang University of Technology,
Shenyang ,Liaoning 110870,China)
(College of physics, Shenyang Normal University, Shenyang 110034, China)
Abstract:
Based on the first-principles method of density functional theory, the electronic
structure and optical properties of single-layer black phosphorus under tensile and
compression deformation were calculated. It is found that the overall trend of
single-layer black phosphorus stability decreased with the increase of tensile and
compression deformation; In the interval where the tensile deformation changes from
0% to 2.5%, the band gap of single-layer black phosphorus tends to increase first and
then decrease. Under compression deformation, the band gap of single-layer black
phosphorus decreased as the compression deformation increased; The highest
absorption and reflection peaks of the light were blue-shifted first when the value of
tensile deformation was small. Then, as the tensile deformation increased, both were
red-shifted. Under compression deformation, as the compression deformation
increased, the highest absorption and reflection peaks of the light were red-shifted
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gradually.
Keywords: black phosphorus; tensile deformation; compression deformation; band
structure; density of states; optical properties
1. Introduction
Black phosphorus is a black, metallic luster semiconductor whose lattice is a
six-membered ring that is linked to each other and each atom is connected to three
other atoms. Studies have shown that the excellent properties of black phosphorus
make it an undisputed huge potential application in nanoelectronic devices such as
electronics, optoelectronics, and thermoelectrics[1-5].
In 1914, the researcher Bridgman first converted white phosphorus to black
phosphorus under high temperature and high pressure conditions[6]. Research on the
properties of black phosphorus has been carried out one after another. The study on
the electrical properties of black phosphorus dates back to the 1950s[7]. In recent
years, with the rapid development of science and technology, the importance of black
phosphorus has become increasingly prominent, and its research has become a hot
spot[8-12]. Zhang Yuanbo and Chen Xianhui[13] obtained a black phosphorus crystal
with nanometer thickness by using a method similar to that of exfoliating graphene.
Park and Jiang et al.[14] described in detail the anisotropy of a single-layer black
phosphorus under tensile and compressive stresses. Liu[2] et al. found that in-plane
stretching and compression had a certain influence on the band gap of
two-dimensional black phosphorus when stress was applied to the two-dimensional
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black phosphorus surface. Wang Jingru et al.[15] found that the defects and sulfur
doping could change the band gap of single-layer black phosphorus, and the range of
band gap changes was large. Wang et al.[16] demonstrated the relationship between the
band gap of two-dimensional black phosphorus and the number of layers. The smaller
the number of layers, the larger the band gap. The single-layer black phosphorus had
the largest band gap. Qu Weiwei et al.[17] studied the band gap of single and
multi-layer black phosphorus crystals due to the applied stress and the number of
layers.
Previous studies have focused on intrinsic single-layer black phosphorus, and
little research has been done on the electronic structure and optical properties of
single-layer black phosphorus in deformation[18,19]. However, single-layer black
phosphorus is inevitably subjected to various deformations in applications such as
electrons and optoelectronics. Tensile and compression deformation are two common
types. Therefore, it is especially important to study the changes in electronic structure
and optical properties under tensile and compression deformation. In this paper, the
influence of tensile and compression deformation on the electronic structure and
optical properties of single-layer black phosphorus is investigated by calculation and
analysis, which can provide guidance for the application of single-layer black
phosphorus materials in optoelectronic devices.
2. Calculation method and model
In this paper, the CASTEP module[20] in Acclerys Material Studio 6.1 is used to
optimize the simulation and calculation of the intrinsic single-layer black phosphorus
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and the single-layer black phosphorus under different tensile and compression
deformation variable. Generalized gradient approximate gradient (GGA) and
Perdew-Burke-Ernzerhof (PBE) functional are used in the process of optimization and
calculation. In inverted lattice space, the cutoff energy of planar wave expansion is
500eV. The Brillouin district k grid points based on the Monkhorst-Pack lattice
choose to use 9×9×1 integral to calculate the system's total energy and electronic
structure[21]. The convergence value of iterative accuracy is 5.0x10-6ev/atom. The
internal stress convergence standard is 0.02GPa. The interaction force between atoms
is less than 0.01eV/Å[22]. A vacuum layer with a thickness of 15 Å is set to avoid the
influence of the effect of adjacent layers on its calculation results[23]. The method of
applying deformation effect to single-layer black phosphorus is shown in Fig. 1. For
the sake of simplicity, different atomic rows are represented by different colors. b0
and b respectively represent the lattice constants of the intrinsic 3 × 3 single-layer
black phosphorus and the 3 × 3 single-layer black phosphorus after tensile or
compression deformation. When tensile deformation is applied to single-layer black
phosphorus, first, apply 0.5(b-b0) tensile deformation to the left of the red part and
0.5(b-b0) tensile deformation to the right of the yellow part, and fix the coordinates of
the two rows of edge atoms. The same applies to the method of compressing
single-layer black phosphorus. The red and yellow phosphorus atoms are deformed in
the same magnitude and opposite direction as the tensile deformation. The
intermediate atoms are geometrically optimized to determine their stable positions.
After geometric optimization, the phosphorus atoms in the middle are also subjected
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to a corresponding proportion of tensile and compression deformation. In this paper
the tensile and compression of single-layer black phosphorus is along the armchair
direction. The Poisson’s ratio of single-layer black phosphorus in armchair direction
is 0.17[24]. The influence of Poisson’s ratio on the electronic structure and optical
properties of single-layer black phosphorus under the tensile and compression
deformation is considered in the calculation. The results show that the tensile and
compression deformation with Poisson’s ratio and without Poisson’s ratio have
slightly different effects on the binding energy, energy band structure, density of
states and optical properties of single-layer black phosphorus, but little effect on its
overall trend. Therefore, the influence of Poisson’s ratio on the electronic structure
and optical properties of single-layer black phosphorus under the tensile and
compression deformation is not included in this paper.
(a) (b)
Fig. 1. Single-layer black phosphorus stress diagram: (a) the main view; (b) the top
view.
3. Result and discussion
3.1 Effect of tensile and compression deformation on the stability of
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single-layer black phosphorus
The stability of the single-layer black phosphorus structure can be characterized
by binding energy. In order to study the structural stability of single-layer black
phosphorus, the binding energy of the single-layer black phosphorus system with the
tensile and compression deformation variable changed from 0% to 2.5% is calculated.
The calculation formula for binding energy is[25]:
Ebind=Estru-Eatom (1)
Among them, Estru is the total energy of single-layer black phosphorus; Eatom is
the sum of the energy of each atom of single-layer black phosphorus. When the sum
of energy in the discrete states of single-layer black phosphorus is greater than the
total energy of single-layer black phosphorus, that is, the binding energy of
single-layer black phosphorus is negative, the structure is stable. The greater the
absolute value of the binding energy, the higher the stability of the single-layer black
phosphorus structure.
The calculation results of single-layer black phosphorus binding energy after
tensile and compression deformation are shown in Table 1. Binding energy 1 is the
binding energy of single-layer black phosphorus under tensile deformation; Binding
energy 2 is the binding energy of single-layer black phosphorus under compression
deformation. The data in the table shows that in the 3×3 single-layer black
phosphorus model established in this paper, there is a total of 36 phosphorus atoms in
the crystal cell, and the total binding energy of the intrinsic single-layer black
phosphorus is -196.08eV. Therefore, the binding energy of intrinsic single-layer black
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phosphorus per atom is -5.45ev /atom, which is not much different from that of black
phosphorus per atom in reference [26]. With the increase of tensile and compression
variables from 0% to 2.5%, the binding energy of single-layer black phosphorus is
negative and in a stable structural state. However, with the increase of tensile and
compression deformation, the overall trend of structural stability decreases gradually.
Table 1 Effect of different tensile and compression deformation variable on the
binding energy of single-layer black phosphorus.
Tensile/compression
deformation0% 0.5% 1.0% 1.5% 2.0% 2.5%
Binding energy 1/eV -196.08 -195.24 -194.88 -194.34 -194.22 -193.26
Binding energy 2/eV -196.08 -195.77 -195.73 -195.68 -194.86 -194.20
3.2 Effect of tensile and compression deformation on energy band
structure and density of states of single-layer black phosphorus
The band gap of single-layer black phosphorus is the energy difference from the
bottom of the conduction band to the top of the valence band. In semiconductors,
electrons in the valence band are excited to transition to conduction band. There are
free electrons in the conduction band and holes in the valence band. Both are two
carriers in a semiconductor. Only when carriers are generated can they conduct
electricity. Therefore, the size of the band gap reflects the minimum energy required
for the valence band electrons in the semiconductor to be excited to the conduction
band to generate carriers. Fig. 2 shows the energy band structure and density of states
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of the intrinsic single-layer black phosphorus. As shown in Fig. 2(a), the intrinsic
single-layer black phosphorus band gap is 0.715eV, which is close to 0.735eV in the
paper [27]. As can be seen from Fig. 2(b), the intrinsic single-layer black phosphorus
has a density of states of zero at the Fermi level, and the peak of the maximum density
of states occurs when the energy value is about -2eV.
Table 2 shows the single-layer black phosphorus band gap values subjected to
different tensile and compression deformation variable. In Table 2, Band gap 1 is the
band gap of single-layer black phosphorus under tensile deformation; Band gap 2 is
the band gap of single-layer black phosphorus under compression deformation. The
band structures of single-layer black phosphorus subjected to different tensile
deformation is shown in Fig. 3. As the tensile deformation variable increases, the
band gap of single-layer black phosphorus also increases. When the tensile
deformation variable reaches 0.5%, the band gap value rises to the highest. However,
as the tensile deformation variable continues to increase, the band gap tends to
decrease. That is, in the interval where the tensile deformation variable changes from
0% to 2.5%, the band gap tends to increase first and then decrease. The single-layer
black phosphorus band structures affected by different compression deformation are
shown in Fig. 4. As the compression deformation increases, the band gap of
single-layer black phosphorus decreases gradually.
Fig. 5(a) and Fig. 5(b) are the diagrams of density of states of single-layer black
phosphorus subjected to different tensile and compression deformations and partial
enlarged views of the density of states at the Fermi level. As can be seen from Fig. 5,
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the intrinsic single-layer black phosphorus has the largest value of density of states at
the peak of the density of states. When the tensile and compression deformation
variable becomes 2.5%, the density of states value of single-layer black phosphorus is
the smallest. The energy value at which the density of states reaches the maximum
peak decreases as the degree of tensile and compression increases. Under tensile
deformation, the region of density of states 0 at Fermi energy level increases first and
then decreases with the increase of tensile deformation. Under compression
deformation, the region of density of states 0 at Fermi energy level decreases with the
increase of compression deformation.
Table 2 Band gap of single-layer black phosphorus under different tensile and
compression deformation variable.
Tensile/compressio
n deformation0% 0.5% 1.0% 1.5% 2.0% 2.5%
Band gap 1/eV 0.715 0.876 0.874 0.790 0.729 0.657
Band gap 2/eV 0.715 0.650 0.486 0.310 0.041 0.027
(a) (b)
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Fig. 2. (a) the band structure of intrinsic single-layer black phosphorus; (b) the density
of states of intrinsic single-layer black phosphorus.
(a) (b)
(c) (d)
(e) (f)
Fig. 3. (a) - (e) band structures with tensile deformation of 0.5%, 1.0%, 1.5%, 2.0%
and 2.5%, respectively; (f) the variation trend of single-layer black phosphorus band
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gap.
(a) (b)
(c) (d)
(e) (f)
Fig. 4. (a) - (e) band structures with compression deformation of 0.5%, 1.0%, 1.5%,
2.0% and 2.5%, respectively; (f) the variation trend of single-layer black phosphorus
band gap.
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(a) (b)
Fig. 5. (a) density of states of single-layer black phosphorus subjected to different
tensile deformation variable; (b) density of states of single-layer black phosphorus
subjected to different compression deformation variable.
3.3 Effect of tensile and compression deformation on optical properties of
single-layer black phosphorus
In order to study the optical properties of single-layer black phosphorus under
different tensile and compression deformation variable, the light absorption
coefficient and reflectivity of the system are calculated and plotted. As shown in Fig.
6, Fig. 6(a) and (d) are overall diagrams of the light absorption coefficient of the
intrinsic single-layer black phosphorus and the single-layer black phosphorus under
different tensile and compression deformation. Fig. 6(b), (c), (e) and (f) are partial
enlarged views thereof. It can be seen from the Fig. 6(b) and (e) that single-layer
black phosphorus has no absorption of light when the wavelength is less than about 62
nm. As can be seen from the Fig. 6(c), when the wavelength is about 244 nm, the
intrinsic single-layer black phosphorus reaches a maximum absorption peak of about
109111 cm-1. The highest absorption peak is blue-shifted when the value of tensile
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deformation variable is small. The absorption peak is red-shifted as the tensile
deformation variable increases. The peaks are arranged in order from large to small:
the single-layer black phosphorus when the tensile deformation variable becomes
0.5%, 1.0%, 1.5%, 2.0%, 2.5%, and 0%. As can be seen from Fig. 6(f), the absorption
peak is gradually red-shifted with the increase of compression deformation. The peak
values are arranged in order from large to small: single-layer black phosphorus with
compression deformation of 0%, 0.5%, 1.0%, 1.5%, 2.0%, and 2.5%. As shown in
Fig. 6(a) and Fig. 6(d), when the wavelength of light is about 7800 nm, single-layer
black phosphorus stops absorption of light.
Fig. 7(a) and (d) are overall views of the light reflectivity of single-layer black
phosphorus under different tensile and compression deformation variable. Fig. 7(b),
(c), (e) and (f) are partial enlarged views thereof. As can be seen from the Fig. 7(b)
and (e), when the wavelength is about 62 nm, single-layer black phosphorus starts to
reflect light. As shown in Fig. 7(c), as the tensile deformation variable increases, the
reflectivity first is blue-shifted and then is red-shifted. The highest peak of reflectivity
occurs when the stretched shape variable becomes 0.5%, and its value is about 0.43.
The intrinsic single-layer black phosphorus has the smallest value at the reflectivity
peak and has a value of about 0.4. As shown in Fig. 7(f), the reflectivity is gradually
red-shifted as the compression deformation increases. The overall trend of reflectivity
peak decreases with the increase of compression deformation.
The red shift or blue shift of the absorption coefficient and reflectivity of light is
closely related to the size of the band gap. When the band gap becomes large, the
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peaks of the two are blue-shifted, and when the band gap becomes small, the peaks of
the two are red-shifted. This is consistent with the conclusions in the literature
[28-31].
(a) (b)
(c) (d)
(e) (f)
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Fig. 6. (a) is the absorption coefficient of light of single-layer black phosphorus under
different tensile deformation variable; (b) and (c) are partial enlarged views of (a); (d)
is the absorption coefficient of light of single-layer black phosphorus under different
compression deformation variable; (e) and (f) are partial enlarged views of (d).
(a) (b)
(c) (d)
(e) (f)
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Fig. 7. (a) is the reflectivity of single-layer black phosphorus under different tensile
deformation; (b) and (c) are partial enlarged views of (a); (d) is the light reflectivity of
single-layer black phosphorus under different compression deformation; (e) and (f)
are partial enlarged views of (d).
4 Conclusion
Based on the first principle of density functional theory, the binding energy, band
structure, density of states and optical properties of intrinsic single-layer black
phosphorus and single-layer black phosphorus under different tensile and
compression deformation variable are calculated.
The calculation results of binding energy showed that when the tensile and
compression deformation variable was in the range of 0%-2.5%, with the increase of
the tensile and compression deformation variable, the single-layer black phosphorus
was in a stable state but the overall stability trend was reduced.
The analysis of band structure and density of states showed that at the early stage
of small tensile deformation, the band gap of single-layer black phosphorus increased.
The single-layer black phosphorus band gap decreased with the increase of tensile
deformation. With the increase of compression deformation, the single-layer black
phosphorus band gap decreased. The value of intrinsic single-layer black phosphorus
was the largest at the peak of density of states.
The calculation of the optical properties of single-layer black phosphorus showed
that when the value of tensile deformation variable was small, the absorption
coefficient of light and the peak of the reflectivity were blue-shifted. When the value
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of tensile deformation variable was large, both the absorption coefficient of the light
and the peak of the reflectivity were red-shifted. With the increase of compression
deformation, the absorption coefficient and reflectivity of light were gradually
red-shifted. Under tensile deformation, the absorption coefficient and reflectivity peak
of intrinsic single-layer black phosphorus were the smallest. When the tensile
deformation was small, the peak values of absorption coefficient and reflectivity
increased. Then, with the increase of deformation, the peak value gradually decreased.
Under compression deformation, the absorption coefficient and reflectivity peak of
single-layer black phosphorus decreased with the increase of compression
deformation.
References
[1] Q. Zhou,Q. Chen,Y. Tong, et al. Light-Induced ambient degradation of few-layer
black phosphorus: mechanism and protection, Angewandte Chemie International
Edition. 55 (2016) 11437-11441.
[2] H. Liu, A. T. Neal, Z. Zhu, et al. Phosphorene: an unexplored 2D semiconductor
with a high hole mobility, Acs Nano. 8 (2014) 4033-4041.
[3] Y. Cai,Q. Ke, G. Zhang, et al. Highly itinerant atomic vacancies in phosphorene,
Journal Pre-proof
18
Journal of the American Chemical Society. 138 (2016) 10199-10206.
[4] V. Tran, R. Soklaski, Y. Liang, et al. Layer-controlled band gap and anisotropic
excitons in few-layer black phosphorus, Phys.rev.b. 89 (2014) 817-824.
[5] R. Fei, A. Faghaninia, R. Soklaski, et al. Enhanced thermoelectric efficiency via
orthogonal electrical and thermal conductances in phosphorene, Nano Letters. 14
(2014) 6393-6399.
[6] P. Chen, N. Li, X. Chen, et al. The rising star of two-dimensional black
phosphorus beyond graphene: Synthesis, properties and electronic applications, 2d
Materials. 5 (2017) 2053.
[7] R. W. Keyes. The electrical properties of black phosphorus, Physical Review. 92
(1953) 580-584.
[8] E. A. Korznikova, J. A. Baimova, S. V. Dmitriev. Effect of strain on gap discrete
breathers at the edge of armchair graphene nanoribbons, Epl. 102(2013) 60004.
[9] H. O. Churchill, P. Jarilloherrero. Two-dimensional crystals: phosphorus joins the
family, Nature Nanotechnology. 9 (2014) 330.
[10]A. Castellanosgomez. Black phosphorus: narrow gap, wide applications, Journal
of Physical Chemistry Letters. 6 (2015) 4280-4291.
[11]A. N. Rudenko, M. I. Katsnelson. Quasiparticle band structure and tight-binding
model for single and bilayer black phosphorus, Physical Review B. 89 (2014)
3520-3527.
[12]M. Köpf, N. Eckstein, D. Pfister, et al. Access and in situ growth of
phosphorene-precursor black phosphorus, Journal of Crystal Growth. 405 (2014)
Journal Pre-proof
19
6-10.
[13]L. Li, Y. Yu, G. Ye, et al. Black phosphorus field-effect transistors, Nature
Nanotechnology. 2014.
[14]J. W. Jiang, H. S. Park. Young's modulus of single-layer black phosphorus,
Journal of Physics D Applied Physics. 47(2014) 5762-5770.
[15]J. R. Wang, C. Chen, S. H. Cai, First-principles calculations of defective and
sulfur doped black phosphorene, Journal of Guizhou Educational Institute. 32(2016)
17-22.
[16]C. Wang, Q. Xia, Y. Nie, et al. Strain-induced gap transition and anisotropic
Dirac-like cones in monolayer and bilayer phosphorene, Journal of Applied Physics.
117 (2015) 666.
[17]W. W. Ju, T. W. Li, Y. L. Yong, et al. Band gap of few-layer black phosphorus
modulated by thickness and strain, Journal of Atomic and Molecular Physics. 2
(2015) 329-335.
[18]H. Liu, Y. Du, Y. Deng, et al. ChemInform abstract: semiconducting black
phosphorus: synthesis, transport properties and electronic applications, Chemical
Society Reviews. 46 (2015) 2732-2743.
[19]Y. Cai, G. Zhang, Y. W. Zhang. Layer-dependent band alignment and work
function of few-layer phosphorene, Sci Rep. 4 (2014) 6677.
[20]J. P. Perdew, K. Burke, M. Ernzerhof. Generalized gradient approximation made
simple, Physical Review Letters. 77 (1997) 3865-3868.
[21]C. Jiang, First-principles study on doped monolayer black phosphorus and
Journal Pre-proof
20
hexagonal boron phosphide, M. S. Dissertation Chongqing University, Chogqing,
2017.
[22]J. H. Wang, G. A. Zhu, Z. J. Xie, et al. First-principles studies electronic
structures and optical properties of four new phosphorene polymorphs, SCIENTIA
SINICA Physica, Mechanica & Astronomica. 5 (2018) 056801.
[23]M. C. Payne, T. A. Arias, J. D. Joannopoulos. Iterative minimization techniques
for ab initio total-energy calculations: molecular dynamics and conjugate gradients,
Reviews of Modern Physics. 64 (1992) 1045-1097.
[24]G. C. Wang, Modulation of electrical property of 2D black phosphorus and
fabrication and characterization of its logic devices, M. S. Dissertation University of
Chinese Academy of Sciences, Beijing, 2017.
[25]Y. Jiang, G. L. Liu, Y. Y. Song, et al. Study on electronic structure and optical
properties of nitrogen boron nanotube filled matel nanowires, Journal of Synthetic
Crystals. 44 (2015) 3040-3046.
[26]Y. L. Du, First-principles studies of black phosphorus as new type anode material
for Lithium ion batteries, M. S. Dissertation Jjiangxi Normal University, Jiangxi,
2010.
[27]L. Liu, First-principle of electronic structure of surface adsorptive monolayer
MoS2 and phosphorene, M. S. Dissertation Shenzhen University, Shenzhen, 2016.
[28]D. Z. Fan, G. L. Liu, L. Wei. Electron-theoretical study on the influences of
torsional deformation on electrical and optical properties of O absorbed graphene,
Acta Physica Sinica. 66 (2017) 246301.
Journal Pre-proof
21
[29]G. L. Liu, S. Zhou, D. Z. Fan. Effect of F coverage on electronic structure and
optical properties of graphene system, Journal of Shenyang University of Technology.
39 (2017) 622-628.
[30]L. Wei, L. G. Liu, D. Z. Fan, et al. Density functional theory study on the
electronic structure and optical properties of S absorbed graphene, Physica B
Condensed Matter. 545 (2018) 99-106.
[31]L. Wei, G. L. Liu, D. Z. Fan, G. Y. Zhang, Electronic theory study on the
eletronic structure and optical properties of S-absorbed graphene, Modern Physics
Letters B. 27 (2018) 1850324.
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There are no conflicts of interest
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