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Analysis of High Analysis of High- speed Differential Line on PCB using HFSS speed Differential Line on PCB using HFSS 2002. 10. 1 Terahertz Interconnection and Package Laboratory KAIST (Korea Advanced Institute of Science and Technology) Seungyong Baek (??? ) Homepage : http://tera.kaist.ac.kr

Differential Pair

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Page 1: Differential Pair

Analysis of HighAnalysis of High--speed Differential Line on PCB using HFSSspeed Differential Line on PCB using HFSS

2002. 10. 1

Terahertz Interconnection and Package LaboratoryKAIST (Korea Advanced Institute of Science and Technology)

Seungyong Baek (? ? ? )

Homepage : http://tera.kaist.ac.kr

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Research Fields at TERA Lab. (in the view of Motherboard)Research Fields at TERA Lab. (in the view of Motherboard)

Spread Spectrum Clock Driver

EMI

Meander LINE

RAMBUSWLP

Single Line ModelingCrosstalk ModelingVia Modeling

Connector Modeling

SMT Component ModelingTwisted Pair on PCB/ChipModular Jack

Signal line across Split plane design

Memory Module Design

BGA ModelingAdaptive Output Driver

ESD

SATADifferential Line Modeling

Embedded Passive Modeling

Power Plane DesignMixed Mode Power Plane ModelingSplit Power System Modeling

MESH Plane Modeling

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ContentsContents

u Introduction of Differential Signaling Scheme

u Characterization of Differential Signaling Scheme by Fabrication Error

u Impedance Change by Edge-Placement of High-speed Differential Lines

u An Evaluation of Differential Impedance in PCBs Using Two Single-

Ended Probes Only

u Conclusion

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Introduction Introduction –– Frequency IncreaseFrequency Increase

2000 2002 2004 2006 2008 2010 2012 20140

1

2

3

4

5

6

7

Year

Freq

uenc

y [G

Hz]

On-chip Local Clock(High-performance)

Chip-to-Board(off-chip) Speed (high-performance, for peripheral buses)

Ref.) ITRS (International Technology Roadmap for Semiconductors), 2000, SIA

u Off-chip data rate should move to the range of Gb/s-per-pin

? increased complexity and cost due to massive parallelism

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Introduction Introduction –– Power Supply Voltage DecreasePower Supply Voltage Decrease

2.1

2000 2002 2004 2006 2008 2010 2012 20140

0.3

0.6

0.9

1.2

1.5

1.8

Year

Pow

er S

uppl

y V

olta

ge [V

]

Minimum logic Vdd(V)for maximum performance

Minimum logic Vdd(V)for minimum power

Ref.) ITRS (International Technology Roadmap for Semiconductors), 2000, SIA

u Reduction of power supply voltage

? power dissipation, transistor channel length, reliability of gate dielectric

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Why Differential Signaling?Why Differential Signaling?

u Reduction of Crosstalk between Circuits

u Reduction of Simultaneous Switching Noise (SSN)

u Reduction of EMI

u Minimization of Common-mode noise

u Design of Low-voltage, Low-power

⇒ High-speed digital circuit

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ObjectiveObjective

u Using HFSS simulation and Testing,

§ A Characterization of Differential Signaling Scheme by Fabrication Error

§ A Demonstration of Impedance Change by Edge-Placement of High-speed

Differential Lines

§ An Evaluation of New Test Method of Differential Lines Using Two Single-

Ended Probes Only

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Process Variation Problem in Differential Line SchemeProcess Variation Problem in Differential Line Scheme

Common-ModeDifferential-Mode

q Variation of fabrication error : (? w, ? s) > (? h)

q Variation of fabrication error ? field change ? variation of electrical characteristics

q Variation of electrical characteristics by fabrication error

Differential-mode > Common-mode

? w? s

? h

Seungyoung Ahn, Albert Chee W. Lu, Wei fan, lai L Wai, and Joungho Kim, “Solution Space Analysis of Interconnects for Low Voltage Differential Signaling ( LVDS) Applications”, IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (EPEP2001), pp. 297-330, Boston, USA, Oct. 2001.

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Device Under TestDevice Under Test

DUT Width Width ? ?

#1

Space

100 µm –20 %125 µm

–10 %

0 %

10 %

20 %

125 µm

125 µm

125 µm

125 µm

112.5 µm

125 µm

137.5 µm

150 µm

#2

#3

#4

#5

DUT Width Space ? ?

#6

Space

100 µm –20 %125 µm

–10 %

0 %

10 %

20 %

125 µm

125 µm

125 µm

125 µm

112.5 µm

125 µm

137.5 µm

150 µm

#7

#8

#9

#10

? ? ?

u ? ? ? ? 10%? ? ? ? ? ? ? ? ? .

u ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?

? ? ? ? ? ? ? ? Signal line? Width? Space? ±10%, ±20% ? ? .

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Characteristic Parameters Characteristic Parameters –– 1.Characteristic Impedance (Z1.Characteristic Impedance (Z00))

±20% of Width variation for Differential-mode signaling

u ZDifferential-mode (100 Ohm) ˜ ZCable (50×2 = 100 Ohm) ? ? Matching.

uWidth? (20%) ð Reflection ? ? (4.9 %)

? ? ? , Z0? (10.3 %)

u 4.9% reflection ð 10.9% Z0 ? ? (full-wave Simulation),

100 125 15080

100

120

140

10.9 %

Z0

(Ohm

)

Width (µm)

4.9 % reflection

Time (ns)

Vol

tage

(V)

Γ−Γ+

×−Γ−

Γ+×=−=∆

11

1001

1100

ref

refref ZZZ

Circuit Simulation (? ? TDR Setup) Full-wave simulation

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Characteristic Parameters Characteristic Parameters –– 1.Characteristic Impedance (Z1.Characteristic Impedance (Z00))

u ZCommon-mode (33Ohm) > ZCable (50/2=25Ohm)? ? ? ? Mismatching

uWidth? (20%) ð Reflection ? ? (4.8 %)

u 4.8% reflection ð 10.9 % Z0 ? ? (full-wave Simulation)

±20% of Width variation for Common-mode signaling

Time (ns)

Vol

tage

(V) 4.8 % reflection

100 125 15010

30

50

70

10.9 %

Width (µm)

Z0

(Ohm

)

Circuit Simulation (? ? TDR Setup) Full-wave simulation

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Characteristic Parameters Characteristic Parameters –– 1.Characteristic Impedance (Z1.Characteristic Impedance (Z00))

±20% of Space variation for Differential-mode signaling

1.8 % reflection

Time (ns)

Vol

tage

(V)

100 125 15080

100

120

140

3.2 %

Space (µm)

Z0

(Ohm

)u ZDifferential-mode (100 Ohm) ˜ ZCable (50×2 = 100 Ohm) ? ? Matching.

u Space? (20%) ð Reflection ? ? (1.8 %)

u 1.8% reflection ð 3.2% Z0 ? ? (full-wave Simulation)

Circuit Simulation (? ? TDR Setup) Full-wave simulation

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Characteristic Parameters Characteristic Parameters –– 1.Characteristic Impedance (Z1.Characteristic Impedance (Z00))

Time (ns)

Vol

tage

(V) 1.1 % reflection

±20% of Space variation for Common-mode Signaling

100 125 150

2.6 %

10

30

50

70

Space (µm)

Z0

(Ohm

)u ZCommon-mode (33 Ohm) > ZCable (50/2=25 Ohm) ? ? ? ? Mismatching

u Space? (20%) ð Reflection ? ? (1.1 %)

u 1.1% reflection ð 2.6% Z0 ? ? (full-wave Simulation)

Circuit Simulation (? ? TDR Setup) Full-wave simulation

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Effect by Edge Placement of Differential LineEffect by Edge Placement of Differential Line

Distance to edge (D)

Line Width = 0.4mm

Pitch=0.7mmSubstrate Width=20mm

Height = 0.3mm

Substrate length=80mm

Test PCB with finite width ground

0.8mm

10mm

? Consider the effects by edge placement of high-speed differential lines

? Demonstrate differential mode impedance change by edge placement

? Certificate variation of radiated emission using simulation and measurement

Seungyong Baek, Derek Kam, Bongcheol Park, Jung-Gun Byun, Cheol-Seung Choi, and Joungho Kim, “Increased Radiated Emission and Impedance Change by Edge-Placement of High-speed Differential Lines on Printed Circuit Board,” 2002 IEEE International Symposium on Electromagnetic Compatibility, vol 1, pp 200-204, Minnesota USA.

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Current density of differential pair (Simulation)Current density of differential pair (Simulation)

(a) (b)

Trace 1 Trace 2 Trace 1 Trace 2

Substrate

Air

Substrate

Air

Current density when the distance to edge is 10mm Current density when the distance to edge is 1mm

10mm 1mm

u When differential pair is located in the center of PCB, current density is balanced in case of (a)

u The balance of current density is broken by edge placement in case of (b)

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Differential impedance change by edge placement (Simulation)Differential impedance change by edge placement (Simulation)

10 9 8 7 6 5 4 3 2 1 020

30

40

50

60

70

80

90

100

110

Distance to edge (D) [mm]

Impe

danc

e [o

hm]

1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.625

30

35

40

45

50

55

60

65

Differential mode impedance

Common mode impedance

u Differential mode impedance remains about 100Ω from 10mm to 2mm

u Differential mode impedance suddenly falls off when D is 1mm

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Measurement setup of differential impedanceMeasurement setup of differential impedance

Differential TDR module 80E04 + Sampling Oscilloscape TDS 8000B( Reflected rising time= 30ps )

Test PCB

50Ω termination

Test setup for measuring the differential mode impedance

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Measurement results Measurement results –– differential mode impedancedifferential mode impedance

44.4 44.6 44.8 45 45.2 45.4 45.6 45.8 46 46.260

70

80

90

100

110

120

Time [ns]

Diff

eren

tial I

mpe

danc

e [o

hm] Distance to the edge (D) = 10mm

Distance to the edge (D) = 0.8mm

Reduction of 17%

u Distance to the edge = 10mm à Differential mode impedance = 102Ω

u Distance to the edge = 0.8mm à Differential mode impedance = 85Ω

u The differential mode impedance suddenly falls off to 85Ω when D = 0.8mm

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Variation of radiated emission by edge placementVariation of radiated emission by edge placement

Edge placement of high-speed differential lines

Balance of the differential lines is collapsed

Balance of the current density is also broken

Increase of common mode current

Variation of radiated emission

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Radiated emission according to location of differential pairRadiated emission according to location of differential pair

10mm

3mm

1mm

0.8mm

MAX : 0.25V/m

MAX : 0.522V/m

0.2

0.4

0.6

30

210

60

240

90

270

120

300

150

330

180 0

Total electric field plot at 1GHz (V/m)

D=3mm (b)D=1mm (c)D=0.8mm (d)

D=10mm (a)

Simulated total electric field at 1GHz

(a)

(b)

(c)

(d)

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Measurement setup of radiation emissionMeasurement setup of radiation emission

180°Phase Shifter

0°180°100MHz

CrystalOscillator

DC PowerSupply

Shielding Box

Anechoic Chamber

Antenna

Radiated Emission

Test PCB

Test setup for measuring an amount of the radiated emission

Spectrum Analyzer

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Measurement result Measurement result –– maximum radiated emissionmaximum radiated emission

100 200 300 400 500 600 700 800 900 1000-85

-80

-75

-70

-65

-60

-55

Frequency [MHz]

dBm

Maximum Spectrum (Peak-to-Peak envelop)

D=10mmD=7mmD=5mmD=3mm

? The closer differential pair to the PCB edge, the more radiated emission occur

? When the differential pair is placed at the edge of the PCB, the shielding effect

by the ground plane is no longer effective

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u Only a small skew of TDR pulses can result in considerable error.

B. J. Rubin, “Understanding Modeling and Measurements of Differential Transmission Lines”,Proc. IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging, 2001, pp. 313-316

Conventional Method 1: Differential TDRConventional Method 1: Differential TDR

u Its instrumentation is expensive because of such difficulties assynchronizing two TDR pulses.

S. Corey, et al., “Electronic Package Characterization Using Differential TDR Techniques”,Proc. IEEE 9th Topical Meeting on Electrical Performance of Electronic Packaging, 2000, pp. 172-174.

Dong Gun Kam, Heeseok Lee, Woonghwan Ryu, Jonghoon Kim, Bongcheol Park, and Joungho Kim, "An Evaluation of Differential Impedance in PCBs Using Two Single-Ended Probes Only," IEEE Workshop on Signal Propagation on Interconnects (SPI), 2002

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2-port VNA

DUTBalun Balun

Conventional Method 2: BalunConventional Method 2: Balun

u Balun = Power Splitter + Phase Shifter

u It is very difficult to make broadband baluns.

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Conventional Method 3: MixedConventional Method 3: Mixed--Mode SMode S--parametersparameters

D. E. Bockelman, “Combined Differential and Common-Mode Scattering Parameters: Theory andSimulation”, IEEE Trans-MTT, Vol. 43, No. 7 (1995), pp. 1530-1539

u Although it is theoretically perfect, it is very expensive.

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WhatWhat’’s the Matters with the Conventional Methodss the Matters with the Conventional Methods

4-port Measurement

Expensive

BalunOnly narrow-band

Need forde-embedding balun effect

Differential TDRAccurate synchronization of two TDR pulses is required

Expensive

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Proposed MethodProposed Method

u Two single-ended probes are connected to each signal traceswith a metallic plane on the bottom layer floating.

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1mm4mm1mm#3

1mm3mm2mm#2

1mm2mm3mm#1

H(dielectric)

S(space)

W(width)DUT

Measured ResultsMeasured Results

132O (+2.3%)129O126O (-2.3%)#3

91.1O (+2.8%)88.6O86.7O (-2.1%)#2

68.9O (+1.1%)67.8O67.1O (-1.0%)#1

Simulation(MoM)

4-portMeasurement

ProposedMethodDUT

u Device-Under-Test (DUT) : Coupled Microstrip Line

u Measured Differential Impedance at 500MHz

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Full Wave Simulation (Using Ansoft HFSS)Full Wave Simulation (Using Ansoft HFSS)

129 O126.8O (-1.7%)126.5O (-1.9%)126.8O (-1.7%)#3

88.6O91.0O (+2.7%)91.3O (+3.0%)91.4O (+3.2%)#2

67.8O73.2O (+8.0%)72.3O (+6.6%)72.9O (+7.5%)#1

Ref.5 GHz2 GHz500 MHzDUT

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The PROS and CONS of the Proposed MethodThe PROS and CONS of the Proposed Method

Advantage

Disadvantage

Differential only

Simple

Cheap

Non-invasive

Practical !!!

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ConclusionConclusion

? We have been researching Signal Integrity, Power/Ground Integrity

and EMI in Tera Lab.

? We introduced Differential Signaling Scheme

§ Variation of differential line characteristics by fabrication error

§ Change of differential impedance by edge placement

§ Proposal of new test method of differential lines