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1
CHAPTER 1
INTRODUCTION TO CRYSTAL GROWTHMETHODS
AND CHARACTERIZATION
1.1 INTRODUCTION
Single crystal growth has prominent role to play in the present era
of rapid technical and scientific advancement, where the application of
crystals has unbounded limits. A single crystal is a periodic array of atoms
arranged in a three dimensional structure with equally repeated distance in a
given direction (Dryburgh 1986). Single crystals are the fundamental building
blocks for modern technology. The properties of the material can be
extensively studied when the material is prepared in single crystal form. The
uniformity of the single crystals allows transmission of electromagnetic
waves without scattering.
Crystal growth is an important field of materials science, which
involves controlled phase transformation. Significant advancement in crystal
growth technology has allowed the development of many excellent crystals to
meet the ever growing applications in lasers, optical communication and data
storage technology. Hence, growth of single crystals has become inevitable
for further research and technology.
The search of new materials is primarily focused on increasing the
nonlinearity. With progress in crystal growth technology, materials having
attractive nonlinear optical properties are being discovered at a rapid pace
2
(Baumert et al 1987; Chemla and Zyss 1987; Gunter et al 1987). This has
enabled the commercial development of single crystals with promising
nonlinear optical properties. Large size crystals are essential for device
fabrication (Brice 1986; Laudise 1970) and efforts are taken to grow large
crystals in short durations by fast growth techniques. The present day demand
is for large and high quality NLO, ferro-electric, piezo-electric single crystals
with minimum defects.
The important goal of crystal growth is the improvement of
microscopic and macroscopic homogeneity, which is a necessity for any
application. The production of most single crystals is a difficult process
requiring significant technical skills in the synthesis of materials, growth,
processing and characterization (Byrappa and Ohachi 2003). It acts as a link
between science and technology for the practical device applications of single
crystals as can be seen from achievements in the modern microelectronics
industry. Organic nonlinear optical crystals have proven to be interesting
candidates for a number of applications: second harmonic generation,
frequency mixing, electro-optic modulation, optical parametric oscillation,
optical bistability etc., (Badan et al 1983). Due to the technological
importance of these nonlinear optical crystals, the need for high quality
organic crystals has grown dramatically in the last decade (Zyss et al 1985).
Crystal growth involves phase transformation to solid phase from
supersaturated mother phase. Diffusion of growth unit occurs at the growth
site and they are orderly arranged with time in the lattice. It is essential to
have a better understanding of the nucleation which occurs during the initial
stages of crystal growth. Nucleation may occur either spontaneously due to
the conditions prevailing in the parent phase or it may be induced artificially.
In case of organic crystals, delocalized -electrons can easily move between
electron donor and electron acceptor groups on opposite sides of the
3
molecule, inducing a molecular charge transfer (Gallagher et al 2003,
Bosshard et al 1993). Growth from aqueous solution provides information on
the fundamental process applicable to both low and high temperature solution
methods (Bordui 1987). Since an understanding of the various crystal growth
methods is very much essential for the growth of nonlinear optical single
crystal, the materials of choice for this investigation, the author discusses in
the following sections the fundamentals of the various methods of growing
single crystals.
1.2 METHODS OF CRYSTAL GROWTH
Crystal growth process and size of the grown crystal differ widely
and are determined by the characteristics of the material (Buckley 1951;
Mullin 1976). The principal methods of crystal growth can be classified as
follows
1. Growth from melt
2. Growth from vapour
3. Growth from solution
There are number of growth methods in each category. A brief
outline on various important techniques of crystal growth has been presented
below.
1.3 GROWTH FROMMELT
Melt growth is the process of crystallization by fusion and
resolidification of the pure material. In this technique, apart from possible
contamination from crucible material and surrounding atmosphere, no
impurities are introduced in the growth is normally much higher than the
4
other methods. In principle, all materials can be grown into a single crystal
from the melt, provided they melt congruently, they do not decompose before
melting and they do not undergo a phase transition between the melting point
and room temperature. The melt growth can be classified as follows:
i. Bridgman – Stockbarger technique
ii. Czochralski technique
iii. Kyropoulos technique
iv. Zone melting technique and
v. Verneuil technique
The important feature of Bridgman technique is the steady motion
of a freezing solid – liquid interface along an ingot which is mounted either
vertically or horizontally. The material is melted in a vertical cylindrical
container. The container is lowered slowly from the hot zone of the furnace
into the cold zone (Bridgman 1924). Crystallization begins at the tip of the
container by forming a nucleus and crystal to grow from the nucleus. One of
the constraints of this technique is the choice of the crucible. The crucible
should not contaminate the melt. The crystal should not adhere to the crucible
as this also can introduce excessive strains during cooling. This technique
cannot be used for materials which decompose before melting. This technique
is best suitable for low melting point materials. Germanium, Gallium arsenide
and such other materials expand on solidification and hence this method is not
useful to grow such crystals.
In Czochralski method, the material is taken in a crucible and is
kept in a furnace. By controlling the furnace temperature, the material is
melted (Zulehner 1983). A seed crystal is lowered to touch the molten charge
which has been maintained at its melting point. When the temperature of the
5
seed is maintained very low compared to the temperature of the melt, by
suitable water cooling arrangement, the molten charge in contact with the
seed will solidify on the seed. Then the seed is pulled with simultaneous
rotation of the seed rod and the crucible in order to grow perfect single
crystals. Liquid Encapsulated Czochralski abbreviated as LEC technique
makes it possible to grow single crystals of materials which consist of
components that produce high vapour pressure at the melting point. This
refined method of Czochralski technique is widely adopted to grow the
III – V compound semiconductors.
In Kyropoulos technique, the crystal is grown in a larger diameter.
From the larger diameter crystal, we can make windows, prisms, lenses and
other optical components. As in the Czochralski method, here also the seed is
brought into contact with the melt and is not raised much during the growth,
i.e., part of the seed is allowed to melt and a short narrow neck is grown.
After this, the vertical motion of the seed is stopped and growth proceeds by
decreasing the power into the melt. The major use of this method is for alkali
halides to make optical components.
In the Zone melting technique, a liquid zone is created by melting a
small amount of material in a relatively large or long solid charge or ingot. It
is then made to traverse through a part or the whole of the charge. It is a more
advantageous method than the other methods due to the removal or addition
of impurities from or to the crystal as the crystal is growing. In this method,
the rate of zone movement depends on the orientation of the two solids
binding the liquid zone as well as the thickness and temperature of the zone
(Keller and Muhlbauer 1981).
In the Verneuil technique, fine dry powder of the material to be
grown is showered through a wire mesh and allowed to fall through the
6
oxy – hydrogen flame. The powder melts and a film of liquid is formed on the
top of the seed crystal, maintained on a pedestal at the bottom of the flame
(Hopper et al 1980). This freezes progressively as the seed crystal is slowly
lowered. The art of the method is to balance the rate of lowering of the seed to
maintain a constant growth rate and diameter. By this method, ruby crystals
are grown for use in jewelled bearing and lasers. This technique is widely
used for the growth of synthetic gems.
1.4 GROWTH FROM VAPOUR
The growth of single crystal materials from the vapour phase is
probably the most versatile of all crystal growth processes, although the large
number of variables involved tends to make it a relatively difficult process to
control. In addition, the lower density of molecules in the crystal growth
environment leads to lower growth rate than achieved from stoichiometric
melts. The driving force for the great evolution of the vapour growth methods
in the past years has been unquestionably the demand of physics and
electronics for single crystals of all possible materials (Santhanaraghavan and
Ramasamy 2002).
The fundamental aspects of vapour phase crystal growth might be
divided into four major areas. They are as follows,
i. Thermodynamics, which controls the driving force for the
chemical reaction occurring at the vapour-solid interface.
ii. Mass transport by which the reactants reach the growing
surface and the products are removed.
7
iii. Surface kinetics, including adsorption of reactants onto the
surface, surface diffusion, step generation, surface chemical
reactions between adsorbed reactants at steps and desorption
of products.
iv. Structural aspects of growth, especially epitaxial growth such
as defect generation and surface morphology of homoepitaxial
growth and heteroepitaxial layers.
Precisely, crystal of a substance can be grown from its vapour
phase by sublimation at atmospheric pressure. By this method small crystals
of high purity can be obtained. There are two methods by which crystals can
be grown from vapour phase. They are
a) Physical Vapour Transport (PVT) technique
b) Chemical Vapour Transport (CVT) technique
1.4.1 Physical Vapour Transport Technique
Crystals of substances having high vapour pressure at temperature
below their melting point are grown by this method. The substance is
enclosed in a capsule and is placed in the furnace. The substance evaporates
and diffuses from the hot end to the colder growth end. It then deposits in the
form of single crystals.
1.4.2 Chemical Vapour Transport Technique
In this method the material to be grown is made to react with a
transporting agent and is transported from the source region to the growth
8
region by means of the transporting agent. The chemical reaction involved
can be given as
A(s) + B(g) AB(g) (1.1)
When the solid or liquid substance reacts with a gaseous
transporting agent at temperature T1 to form vapour phase reaction product
(AB), which in turn undergoes a reverse reaction at low temperature T2
resulting in the reformation of A in the crystalline form and the release of B.
The reversible reaction is an important condition for crystallization to take
place. Substances like SbSi, BiBr etc., can be grown using this method.
1.5 GROWTH FROM SOLUTION
This method is widely used to grow the crystals which have high
solubility and have variation in solubility with temperature (Chernov 1984).
The vapour pressure at the growth temperature should be small. The viscosity
of the solvent – solute system should be low. Another aspect to be seen while
employing solution growth method is that the container and stirrer should be
non – reactive with the material. The materials must be inflammable and less
toxic. Easy separation of grown crystal by chemical or physical means and
low melting point are citied as additional criteria for flux growth or high
temperature solution growth.
There are two methods in solution growth depending upon the
solvents and the solubility of the solute. They are classified into
(i) High temperature solution growth
(ii) Low temperature solution growth
9
1.5.1 High Temperature Solution Growth
The high temperature solution growth can be further sub-divided
into
(a) Flux method
(b) Hydrothermal growth
1.5.1.1 Flux method
In this method, a solid (molten solid / flux) is used as the solvent
instead of liquid and the growth process takes place well below the melting
temperature (Hubner 1969). Molten salt is called flux is used as a solvent and
the growth process takes place well below the melting point of the solute. The
crystals grown by this technique do have higher concentration of impurities
than these grown from melt. Since the growing crystal is not exposed to steep
temperature gradient, strain free crystals can be obtained. The flux growth is
preferably used for the following reasons:
(i) The material melts incongruently
(ii) The melting point of the material is too high and
(iii) The material is non-stoichiometric at its melting point due to a
high vapour pressure of one or more constituents.
A number of metals, metal oxides and other compounds, practically
insoluble in water up to its boiling point, show an appreciable solubility when
the temperature and pressure is increased well above 373 K and 1 atmosphere
pressure respectively.
10
1.5.1.2 Hydrothermal growth
The hydrothermal technique is a very important technique for its
technological efficiency in developing purer, bigger and dislocation free
single crystals. Although large number of materials can be grown by this
technique, it is primarily used for the growth of high quality quartz crystals.
A number of metals, metal oxides and other compounds practically insoluble
in water up to its boiling point, show an appreciable solubility when the
temperature and pressure increase well above 100ºC and 1 atmosphere
respectively. Growth is usually carried out in steel autoclaves with gold or
silver linings. The liquids from which the process starts are usually alkaline
aqueous solutions. Pressure is typically in the range of hundreds or thousands
of atmosphere. The requirement of high pressure presents practical difficulties
and there are only few crystals of good quality and large size grown by this
technique (Ballaman and Laudise 1963). Materials like quartz, calcite,
alumina and antimony sulphite can be grown by this method.
1.5.2 Low Temperature Solution Growth
Among the various methods of growing single crystals, solution
growth at low temperature occupies a prominent place owing to its versatility
and simplicity. Hence the crystals grown by this technique are free from
thermal strains and have well defined facets. Growth of crystals from solution
at room temperature has many advantages over the melt growth though the
rate of crystallization is very slow. Since growth is carried out at room
temperature, the concentration of structural imperfection in solution grown
crystals is relatively low (Brice 1972).
11
Low temperature solution growth can be further classified into the
following methods.
(a) Slow evaporation method
(b) Slow cooling method
(c) Temperature gradient method and
(d) Gel method
1.5.2.1 Slow evaporation method
This method is also called solvent evaporation method.
The temperature is fixed constant and provision is made for evaporation of
solvent. With non-toxic solvents like water, it is permissible to allow
evaporation into the atmosphere. Typical growth conditions involve
stabilization to about ± 0.01ºC. The evaporation techniques of crystal growth
have the advantage that the crystals grow at a fixed temperature. In this
method the solution loses particles, which are weekly bound to other
components, and therefore the volume of the solution decreases. In almost all
the cases, the vapour pressure of the solvent above the solution is higher than
the vapour pressure of the solute and therefore the solvent evaporates more
rapidly and the solution becomes supersaturated (Petrov 1969). This method
can effectively be used for the materials having moderate solubility
coefficient. Many organic and inorganic crystals were grown by slow
evaporation technique.
1.5.2.2 Slow cooling method
This method is suitable to grow bulk single crystals in short
duration. In this technique, supersaturation is achieved by changing
temperature usually throughout the period of crystal growth. The
12
crystallization process is carried out in such a way that the point on the
temperature dependence on the concentration moves into the metastable
region along the saturation curve in the direction of lower stability. The main
disadvantage is the need to use a range of temperature. The possible range of
temperature is usually small so that much of the solute remains in the solution
at the end of the run. To compensate these effects, large volumes of solution
are required. Even though the method has technical difficulty of requiring a
programmable temperature control, it is widely used with great success
(Brice 1973).
1.5.2.3 Temperature gradient method
This method involves the transport of the materials from a hot
region containing the source material to be grown to a cooler region where the
solution is supersaturated and the crystal grows. On the other hand, changes in
the small temperature difference between the source and the crystal zones
have a large effect on the growth rate. The main advantages of this method
are:
(i) Crystal grows at fixed temperature
(ii) Insensitive to changes in temperature provided both the source
and growing crystal undergo the same change and
(iii) Economy of solvent and solute
1.5.2.4 Gel growth method
It is an alternative technique to solution growth with controlled
diffusion and the growth process is free from convection. When the growth of
single crystals by conventional technique has a problem such as
decomposition before melting or non-availability of suitable flux, gel growth
13
serves as an excellent alternative method. Gel is a two component system of a
semi solid rich in liquid and inert in nature. The material which decomposes
before melting can be grown in this medium by counter diffusing two suitable
reactants. Crystals of several millimetre dimensions can be grown in a few
days by using a simple test tube apparatus. The crystals grown by this
technique have high degree of perfection and fewer defects since the growth
takes place at room temperature.
1.6 UNIDIRECTIONAL GROWTH METHOD FROM
SOLUTION
To grow high quality crystal with a reasonable yield, the
investigation of a possible single crystal growth technique is needed.
Nonlinear optical interactions in bulk single crystals usually require
phase-matching orientations in acentric crystals to maximize the frequency
conversion efficiency. To attain high wavelength conversion efficiency,
nonlinear optical crystals have to be long enough in the phase-matched
direction. Therefore, method of growing nonlinear optical crystals with a
large size in a phase-matched direction is strongly required. Further, growth
of organic or inorganic crystal with specific orientation has tremendous value
in terms of its significance towards device application. From this point of
view, a novel Sankaranarayanan-Ramasamy crystal growth method has more
advantages when compared to conventional solution growth techniques
(Sankaranarayanan and Ramasamy 2005) and this can be employed to grow
unidirectional crystal from solution.
1.6.1 Sankaranarayanan-Ramasamy (SR) Method
It is one of the methods to grow the crystals from solution.
Unidirectional crystals are very important for the preparation of functional
14
crystals. For example, as the conversion efficiency of second harmonic
generation is always highest along the phase-match direction for nonlinear
optical crystals, the unidirectional crystal growth method is most suitable for
the crystal growth along that direction. In addition, the unidirectional solution
crystallization usually occurs at around room temperature; much lower
thermal stress is expected in these crystals over those grown at high
temperatures. This is particularly helpful for growth of mixed crystals because
thermal stresses can cause these crystals to crack easily. Crystals with all
facets and different morphology are grown by conventional solution growth
technique but from application point of view, orientation controlled good
quality, large size SHG crystals are needed. In all the methods of growth by
solution, planar habit faces contain separate regions common to each facet
having their own sharply defined growth direction known as growth sectors.
The boundaries between these growth sectors are more strained than the
extended growth sectors due to mismatch of lattices on either side of the
boundary as a result of preferential incorporation of impurities into the lateral
section (Gallagher et al 2003).
A unidirectional crystal growth method was reported by
Sankaranarayanan-Ramasamy (Sanakaranarayanan and Ramasamy 2005).
The main concept of the method is gravity driven concentration gradient. The
solutions at the bottom of the ampoule have more concentration compared to
top solutions. The concentration gradient is directly proportional to time.
In Sankaranarayanan-Ramasamy (SR) method, a glass ampoule
was made up of an ordinary hollow borosilicate-glass with a tapered
V-shaped or flat bottom portion to mount the seed crystal and a U-shaped top
portion to fill a good amount of saturated solution to grow a good size crystal.
The middle portion was cylindrical in shape with lesser diameter than that of
the U-shaped portion, wherein one can get a cylindrical shaped crystal.
15
1.6.2 Salient Features of Sankaranarayanan-Ramasamy (SR) Method
The salient features of SR method are listed below:
(i) Single crystal with desired orientation is possible at room
temperature.
(ii) It is easy to adjust the growth rate as per our need.
(iii) Scaling up is relatively very simple.
(iv) With a thin plate as seed, growth of large size crystal is
possible.
(v) Microbial growth has been causing serious concern in
solution growth experiments largely due to aging of the
solution. However, as fresh solution can be constantly fed as
crystal growth proceeds the problem associated with
microbial growth can be avoided.
(vi) Simple experimental set up offers the feeding of the growth
solution at a definite interval which depends on the growth
rate of the crystal, thereby minimizing the exposure of the
growth solution to the environment.
(vii) The achievement of solute-crystal conversion efficiency of
100% reduces the preparation and maintenance of growth
solution to a large extent because in conventional solution
growth method, to grow such a large size crystal, a large
quantity of solution in a large container is normally used and
only a small fraction of the solute is converted into bulk
single crystal. But, in the present method, the size of the
growth ampoule is the size of the crystal.
16
(viii) The results obtained from the characterization techniques
such as XRD, phase-matching study and laser damage
threshold measurement demonstrate the suitability of this
method to obtain nonlinear elements right during crystal
growth thus decreasing material consumption when making
products for nonlinear optical applications.
(ix) In the case of thread hanging technique, inclusion appears
and the quality of the crystal is poor if a suspension thread is
used. This situation is avoided in this method.
(x) Usually in solution growth it is difficult to control the shape
and in this method by changing the ampoule shape it is
possible to change the shape of the crystal.
(xi) The crystal quality is always higher compared to the
conventional method grown crystals.
1.6.3 Experimental setup of Sankaranarayanan-Ramasamy (SR)
Method
The main concept of the method is gravity driven concentration
gradient. The solution at the bottom of the ampoule have more concentration
compared to top solutions. In SR method a glass ampoule was made up of an
ordinary hollow borosilicate-glass with a tapered V-shaped or flat bottom
portion to mount the seed crystal and a U-shaped top portion to fill a good
amount of saturated solution to grow a good size crystal. The middle portion
was cylindrical in shape with lesser diameter than that of the U-shaped
portion, wherein one can get a cylindrical shaped crystal. The schematic
diagram of experimental setup of SR method is shown in the Figure 1.1.
17
It consists of temperature controllers, ammeters, transformers, ring
heaters at top and bottom portions, sensors, glass ampoule and water bath.
Ring heater was directly connected to the temperature controller to maintain
the heater voltage and it provides the necessary temperature for solvent
evaporation and for growing crystals. The growth ampoule was placed inside
the water bath for avoiding temperature fluctuations in the growth portion.
Growth condition of this method depends on the temperatures of the heating
coils. Mercury thermometers show the temperatures near the heating coils.
The entire experimental setup is porously sealed and placed in a dust free
zone.
1.Thermometers 2. Heating coils 3. Top portion 4. Water
5. Bottom portion 6. Saturated solution 7. Bath 8. Seed
Figure 1.1 Schematic diagram of SR experimental setup
18
In SR method the following main points have to be considered i.e.
concentration of the solution, size of the ampoule, selection of seed, seed
orientation and mounting, temperature at top and bottom portion, evaporation
rate and growth rate. According to the solubility data, saturated solution was
prepared and transferred to crystallizer for collecting the seed crystal by slow
evaporation solution growth technique (SEST). A suitable seed crystal having
a reasonable size was selected for SR method of crystal growth with specific
orientation. The saturated solution fed into the SR glass ampoule. In the
freshly prepared solution, the solute concentration was deliberately kept
slightly undersaturated in order to avoid any possible physical instability at
the growth interface. For controlled evaporation, the top portion was closed
with some opening at the middle using thick plastic cover. Due to the
transparent nature of the solution and the experimental setup, real-time
close-up observation revealed the solid-liquid interface which was found to be
flat. In contrast to the SEST method, in the SR method the crystal was
restricted to grow with a specific direction inside a growth ampoule. The
entire arrangement was placed in the water bath to reduce the temperature
fluctuation.
1.7 GROWTH TECHNIQUES FOR THE PRESENT
INVESTIGATION
In the present investigation two different types of low temperature
solution growth techniques were used. They are low temperature conventional
slow evaporation solution method and unidirectional growth by
Sankaranarayanan-Ramasamy (SR) method. The SR method is superior to the
other low temperature solution growth techniques, due to its simple
experimental setup, less cost, flexibility to optimise for improving the
perfection of the crystals and ease in growing bulk size unidirectional crystals.
19
1.7.1 Solution and Solubility
The important process in the growth of crystals from solution is the
preparation of the solution. It is essential to prepare the solution, from pure
solute and solvent. In recent years, an appreciable attention is given to grow
crystals from solutions with faster growth rate. A solution is a homogeneous
mixture of a solute in a solvent. Solute is the component, which is present in a
smaller quantity and that one which gets dissolved in the solution
(Santhanaraghavan and Ramasamy 2000).
Solubility of the material in a solvent decides the amount of the
material, which is available for the growth and hence defines the total size
limit. Solubility gradient is another important parameter, which dictates the
growth procedure. Neither, a flat nor steep solubility curve will enable the
growth of bulk crystals from solution, while the level of supersaturation could
not be varied by reducing the temperature in the former. Even a small
fluctuation in the temperature will affect the supersaturation to grow the good
quality bulk crystals in both cases. If the solubility gradient is very small,
small evaporation of the solvent is the best option for crystal growth in order
to maintain a constant supersaturation in the solution.
Supersaturation is an important parameter for the solution growth
process. The crystal grows by the accession of the solute in the solution where
the degree of supersaturation is maintained. For the purification of the solute,
one of the simple processes is the repeated fractional recrystallization of the
solute using pure solvent. Any standard procedure such as distillation and
deionization can be adopted to purify the solvent. Recently, it has been proved
that the biological contamination such as bacteria also affects the growth.
Hence the solvent must be made free from all impurities.
20
1.7.2 Expression for Supersaturation
The supersaturation of the system may be expressed in number of
ways. The basic units of concentration as well as temperature must be
specified. The concentration driving force ( C), the supersaturation ratio (S)
and relative supersaturation ( ) are related to each other as follows:
The concentration driving force C = C – C* (1.2)
where C is the actual concentration of the solution and C* is the equilibrium
concentration at a given temperature. Then,
Supersaturation ratio S = C/ C* (1.3)
Relative supersaturation = (C - C*)/ C* (1.4)
= S-1 (1.5)
If the concentration of the solution can be measured at a given
temperature and the corresponding equilibrium saturation concentration is
known, then it is easy to calculate the supersaturation.
1.7.3 Nucleation
Nucleation is an important phenomenon in crystal growth. The
formation of crystals in liquid solutions begins with nucleation. Nucleation
may occur spontaneously or it may be induced artificially. These two cases
are called homogeneous and heterogeneous nucleation, respectively. Both the
nucleation come under primary nucleation and occurs in systems that do not
contain crystalline matter.
21
When nucleation is generated in the vicinity of crystals present in
the supersaturated system, it is referred to as secondary nucleation. The
attainment of the supersaturated state is an essential criterion for any
crystallization process. In general crystallization process takes place by three
steps:
1. Achievement of supersaturation or supercooling
2. Formation of crystal nuclei of microscopic size
3. Successive growth of crystal to yield distinct faces
All the above steps may occur simultaneously at different regions
of a crystallization unit. However an ideal crystallization process consists of a
strictly controlled stepwise program. Meirs and Issac (1987) conducted a
detailed investigation on the relationship between supersturation and
spontaneous crystallization, the results of which are shown in Figure 1.2.
It shows three zones, which are termed as region I, II, III respectively.
Region I corresponds to the undersaturated zone, where the
crystallization is not possible. The region between solubility curve and
supersolubility curve is termed as metastable zone (region II). Seeded growth
can be initiated from this region. The unstable or labile zone where the
spontaneous nucleation is probable which is termed as region III.
The formation of nucleation is insufficient to initiate
crystallization. The formation of embryos or nuclei with number of minute
solid particles present in the solution often termed as centres of
crystallization, is a prerequisite for the growth of crystals. The formation of
stable nuclei occurs only by the addition of a number of molecules (A1) until a
critical cluster is formed. In general
An-1 + A1 An (critical) (1.6)
22
Figure 1.2 Meirs solubility Curve
Any further addition to the critical nucleus results in nucleation
followed by growth. Once these nuclei grow beyond a certain size, they
become stable under the average conditions of supersaturation of the solution.
1.7.4 Solvent Selection
In solution growth, it is very important to choose the correct solvent
to grow the crystals. Solvents may be classified as being polar or non-polar.
The former description is given to liquids which have high dielectric constant
such as water, acids, alcohols and the latter refer to liquids of low dielectric
constant like aromatic hydrocarbons. A non-polar solute (anthracene) is
usually more stable than in a polar solvent (water). However, close chemical
similarity between solute and solvent should be avoided, because their mutual
solubility will in all probability be high and crystallization may prove difficult
MetastableLabile
BB’ Solubility Curve
AB”C” Evaporation and Cooling CC’ Super Solubility Curve
23
or uneconomical (Mullin 1961). The solvent must be chosen taking into
account the following factors:
(i) Good solubility for the given solute
(ii) Good temperature coefficient of solute solubility
(iii) Non toxicity
(iv) Non corrosiveness
(v) Non volatility
(vi) Non flammability
(vii) Maximum stability
(viii) Less viscosity
(ix) Small vapour pressure at the growth temperature
(x) Cost advantage
Almost 90% of the crystals produced from low temperature
solutions are grown by using water as a solvent. Probably no other solvent is
as generally useful for growing crystal as is water. Because of its higher
boiling point than most of the organic solvents commonly used for growth, it
provides a reasonably wide range for the selection of growth temperature.
Moreover, it is chemically inert to a variety of glasses, plastics and metals
used in crystal growth equipment (Buckley 1951, Santhanaraghavan and
Ramasamy 2000).
1.7.5 Materials Purification
High purity of material is an essential prerequisite for crystal
growth. Therefore the first step in crystal growth is the purification of
material in appropriate solvents. Impurities as low as possible at the scale of
10-100 ppm are required. Purification needs repetition of the crystallization
process in an appropriate solvent. For the purification of the solute, one of the
24
simple processes is the repeated fractional recrystallization of the solute using
pure solvent. Any standard procedure such as distillation and deionization can
be adopted to purify the solvent. Recently, it has been proved that the
biological contamination such as bacteria also affects the growth. Hence the
solvent must be made free from all impurities. Although the chromatographic
techniques like high performance liquid chromatography or gas
chromatography can be used for purification, they yield very small quantity or
purified product per cycle. The process like recrystallization followed by
filtration of the solution would increase the level of purity.
1.7.6 Preparation of the Solution
The important process in the growth of crystals from solution is the
preparation of the solution. It is essential to prepare the solution, from pure
solute and solvent. For solution preparation it is essential to have the
solubility data of the material at different temperatures. Sintered glass filters
of different pore size are used for solution filtration. The clear solution,
saturated at the desired temperature is taken in a growth vessel.
1.7.7 Harvesting of Grown Crystals
The extraction of a crystal from its mother liquor requires some
care because any damage may destroy completely the scientific value of the
crystal or even fracture it altogether. If a crystal is extracted from a solution
kept close to room temperature, it can be simply dried by means of high
quality Whatman filter paper (grade 1). Filter paper must be used to rub the
surface. The majority of crystals prepared from low temperature solutions are
easily scratched. The surface of a carelessy treated crystal may acquire many
defects.
25
The quality of the harvesting crystal depends on
i. Purity of the starting material
ii. Quality of the seed crystal
iii. Cooling rate employed
iv. Efficiency of agitation
1.8 CHARACTERIZATION TECHNIQUES
The role of characterization of the crystal gains significance in the
context that the results of such studies will give a feedback about the quality
of the grown crystals so that the growth parameters will be standardized. For
proper understanding of the grown crystals and to use them for technological
applications, they have to be characterized accurately. The four basic
parameters that control the properties of the single crystals are composition,
purity, crystallographic structure and crystal defects (Laudise et al 1975).
Characterization of a crystal essentially consists of its chemical
composition, structure, defects and the study of its electrical, mechanical,
thermal and optical properties.
In the present investigation the grown crystals were subjected to
crystallographic analysis like X-ray diffraction (XRD) to determine the
crystal system and its lattice parameters. High Resolution Scanning Electron
Microscope (HR-SEM) and the Energy Dispersive X-ray Analysis (EDX)
shows the nature of growth and the presence of constituent elements,
respectively. The functional groups and vibrational frequencies were
identified using Fourier transform infrared (FT-IR) and Fourier transform
Raman (FT-Raman) spectral analyses. The UV-Visible absorbance spectra
were recorded to find out the cut-off wavelength and suitability of the crystal
26
for NLO application. Photoluminescence studies were carried out to analyse
the structural perfection of the grown crystals. Thermal characteristics were
analyzed using the Thermogravimetric (TG), Differential Thermal (DT) and
Differential Scanning Calorimetry (DSC) studies. Microhardness test was
performed to evaluate the mechanical behaviour. Consequently it is the
purpose of this section to briefly outline some of the basic as well as applied
characterization methods.
1.8.1 X-Ray Diffraction
X-ray diffraction (XRD) is versatile, non-destructive technique that
reveals detailed information about the chemical composition and
crystallographic structure of manufactured materials. A crystal lattice is a
regular three dimensional distribution of atoms in space. These are arranged
so that they form a series of parallel planes separated from one another by a
distance d, which varies according to the nature of the material. For any
crystal, planes exist in a number of different orientations, each with its own
specific d-spacing.
1.8.1.1 Single Crystal X-ray Diffraction
X-ray diffraction studies for the grown crystals were carried out
using a Bruker AXS Kappa APEX II single crystal CCD diffractometer
(Figure 1.3) equipped with graphite monochromated MoK ( = 0.7107 Å)
radiation. The goniometer equipped with the diffractometer is four circle
goniometer with , , and 2 axes by which the crystal is rotated. The
crystals of 0.30 × 0.25 × 0.25 mm3 were cut by sharp blade and mounted on
a glass fibre using cyanoacrylate. The unit cell parameters were determined
by collecting the diffracted intensities from 36 frames measured in three
different crystallographic zones.
27
Figure 1.3 Single Crystal X-ray diffractometer
1.8.1.2 Powder X-ray Diffraction
Powder X-ray diffraction is a non-destructive technique widely
applied for the characterization of crystalline materials. The method has been
used for phase identification, quantitative analysis, extraction of three
dimensional micro structural properties, determination of structure
imperfections, crystal structures of a crystalline material and can provide
information on unit cell dimensions. The XRD works on the principle of
Bragg’s law. According to this law, when a beam of monochromatic X-rays
falls on a crystal each atom becomes a source of scattering radiations.
28
In a crystal there are certain planes which are particularly rich in atoms. The
combined scattering of X-rays from these planes can be considered as a
reflection from these planes. At certain glancing angles, the reflections from
these set of parallel planes are in phase with each other, and hence they
reinforce each other to produce maximum intensity. For other angles, the
reflections from different planes are out of phase and hence they reinforce to
produce either zero intensity or feeble intensity.
In the present work, powder X-ray diffraction analysis was carried
out using BRUKER D2 PHASER spectrometer with CuK ( = 1.5418Å)
radiation is shown in the Figure 1.4. In the powder X-ray diffraction method
the sample is grounded to a fine powder which contains thousands of grains
with random orientations. By scanning through 10° to 80° at a rate of 1°/min,
we can find where the diffraction has occurred and each of them will be
associated with different atomic spacing.
To detect the diffracted X-rays from the sample an electronic
detector is placed on the other side of the sample and it is allowed to rotate it
from 10° to 80°. It keeps track of the angle and sends the information to a
computer. The graph is plotted between X-ray intensity and angle 2 values.
Angle 2 for each diffraction peak can be converted to ‘d’ spacing using
Bragg’s law, which is used to find out the crystal structure.
29
Figure 1.4 Photograph of Powder X-ray diffraction instrument
1.8.2 Elemental Analysis
1.8.2.1 CHN analysis
The elemental analysis of a compound is particularly useful in
determining the empirical formula of the compound. The empirical formula is
the formula for a compound that contains the smallest set integer ratio for the
elements in the compound that gives the correct elemental composition by
mass. The most common form of elemental analysis, CHN analysis, is
accomplished by combustion analysis. In this technique, a sample is burned
with excess of oxygen and various traps collect the combustion products-
carbon dioxide, water and nitric oxide. The weights of these combustion
products can be used to calculate the composition of the unknown sample.
30
The analysis of results is performed by determining the ratio of
elements from within the sample, and working out a chemical formula that
fits with those results. This process is useful as it helps to determine if the
sample examined has the desired composition and confirms the purity of a
compound. The accepted deviation of elemental analysis from the calculated
is 0.4 %.
Figure 1.5 Photograph of CHNS analyzer
In our study, chemical composition of the grown crystals
determined by Carbon, Hydrogen and Nitrogen (CHN) analysis using
PERKIN ELMER 2400 Series CHNS analyser (Figure 1.5) is compared with
the theoretical values of carbon, hydrogen and nitrogen present in the crystals.
31
1.8.2.2 Energy Dispersive X-ray (EDX) analysis
Energy dispersive spectroscopy is a chemical microanalysis
technique performed in combination with Quanta 200 FEG scanning electron
microscope (Figure 1.6). The interaction of an electron beam with a specimen
in the scanning electron microscope produces many signals, including X-rays.
Some of the X-rays produced in this manner have wavelength and energies
that are characteristics of the element in that specimen.
It is a technique used for identifying the elemental composition of
the specimen. Elemental evaluation by the analytical microscopy may be
accomplished by analysing the emitted radiation and showing that these
specific wavelengths are present. The analysis is carried out in an X-ray
spectrometer by two methods, (i) wavelength-dispersive analysis and
(ii) energy-dispersive spectroscopy. In the present investigation the chemical
analysis has been carried out by Energy Dispersive spectroscopy. During
Energy Dispersive X-ray (EDX) analysis, the specimen is bombarded with an
electron beam inside the scanning electron microscope. The bombarding
electrons collide with the specimen atom’s own electrons, knocking some of
them off in the process. The EDX spectrum is a plot of intensity of X-rays
with energy of the emitted X-rays. An EDX spectrum normally displays peaks
corresponding to the energy levels for which the most X-rays have been
received. Each of these peaks is unique to an atom, and therefore corresponds
to a single element. The higher the intensity of peak in a spectrum, the more
concentrated is the element in the specimen.
32
Figure 1.6 Photograph of HR-SEM with EDX instrument
1.8.3 Vibrational Analysis
Vibrational spectroscopy is an extremely useful tool in the
elucidations of molecular structure. The spectral bands can be assigned to
different vibrational modes of the molecule. The various functional groups
present in the molecule can be assigned by a comparison of the spectra with
characteristic functional group frequencies. As the positions of the bands are
directly related to the strength of the chemical bond, a large number of
investigations including intermolecular interactions, phase transitions and
chemical kinetics can be carried out using this branch of spectroscopy.
1.8.3.1 Fourier Transform Infrared (FT-IR) spectroscopic analysis
Infrared spectroscopy involves study of the interaction of
electromagnetic radiation with matter. Due to this interaction, electromagnetic
33
radiation characteristic of the interacting system may be absorbed or emitted.
The experimental data consist of the nature (frequency of wavelength) and the
amount (intensity) of the characteristic radiation absorbed or emitted. These
data are correlated with the molecular and electronic structure of the
substance with intra- and inter molecular interactions. It is one of the most
widely used tools for the detection of functional groups in pure compounds
and mixtures, and for the comparison of compounds.
There are two types of infrared spectrometers characterized by the
manner in which infrared frequencies are handled. In the first type called the
dispersive type, the infrared light is dispersed into individual frequencies
using a grating monochromator whereas in the second called the Fourier
transform infrared where, the infrared frequencies interact to produce an
interference pattern and this pattern is then analysed mathematically using
Fourier Transform to determine the individual frequencies and their
intensities (Willard et al 1986, Silverstein et al 1998).
When a sample is placed in the path of the beam, it absorbs the
characteristic frequencies so that their intensities are reduced in the
interferometer and the ensuing Fourier transform is the infrared absorption
spectrum of the sample. The scan time for the moving mirror dictates the
speed with which the infrared spectrum can be recorded. Digitalization of the
data and calculation of the Fourier Transform take few seconds more, but the
information which constitutes the spectrum, can be acquired in exceedingly
short time even in a few milliseconds.
34
Figure 1.7 FT-IR spectrophotometer
The FT-IR spectra of the sample are recorded in the wavelength
region of 4000 - 400 cm-1. The photograph of PERKIN-ELMER FT-IR
spectrometer is shown in Figure 1.7. This spectrometer consists of an
interferometer between source (Globar) and sample compartment. The sample
compartment is located in-between the interferometer and the detector. The
KBr pellet method is used for recording spectrum in the present work. The
background is first recorded with KBr pellets. The sample is then pelletized
with KBr and the signals are recorded.
1.8.3.2 Fourier Transform Raman (FT-Raman) spectroscopic analysis
Raman spectroscopy concerns with the scattering of radiation by
the sample, rather than an absorption process. It is based on the principle of
inelastic scattering of photons by molecules. For a transition to be Raman
active there must be a change in polarizability of the molecule. Raman
spectroscopy is true for heteronuclear diatomic molecules. Diatomic
35
molecules do not possess a permanent electric dipole, and so they are
undetectable. The energy of the exciting radiation will determine as to which
type of transition occurs. The energy of the rotational transitions are lower
than the vibrational transitions (Clark 2007).
1.8.4 Optical Studies
1.8.4.1 UV-visible transmittance studies
UV-Visible spectroscopy is the measurement of the attenuation of
the light beam after it passes through a sample or after reflection from a
sample surface. The optical transmission spectra are recorded for polished
plates of grown crystals using VARIAN CARY 5E UV-Vis-NIR
Spectrophotometer (Figure 1.8). The spectrophotometer consists of a light
source, monochromator which resolves radiation into its component
wavelengths, sample compartment and detector which measures the amount
of light transmitted by the sample. Two light sources are used to cover entire
range of spectrum from 200-2500 nm. A narrow bandwidth was selected with
the help of band pass filters. Then the radiation was passed through the cells
of the given solution and solvent alternatively and respectively. This process
is double beam process and it eliminates the fluctuations of intensity of
radiation scattering effect and solvent effect. The two rays were combined and
differences in intensities of those two radiations are measured electrically.
The movement of the monochromators and the recorder were synchronized
and adjusted so that the record shows the intensity of appropriate radiation. In
the transmission study, the intensity was recorded in terms of percentage of
transmittance (%) along Y-axis and the wavelength (nm) along X-axis.
The UV-Visible spectrum gives information about the useful range of
wavelength in which the NLO crystals can be operational.
36
Figure 1.8 UV-Visible spectrophotometer
1.8.4.2 Photoluminescence (PL) studies
Photoluminescence (PL) is a commonly used characterization tool
for material analysis. In Photoluminescence, absorption of light results in a
transition from the ground state to an excited state of an atom or molecule;
then the system undergoes a non radiative internal relaxation and the excited
electron moves to a more stable excited level; after a characteristic lifetime in
the excited state, the electronic system will return to the ground state. The
energy is released in the form of light, and this emitted light is detected as
photoluminescence.
37
Figure 1.9 Photograph of Spectrofluorometer
The photoluminescence measurement was made using a Jobin
Yvon Spex spectrofluorometer (Figure 1.9). The sample compartment module
equipped with a Xenon lamp operates at 450 Watts. This high-pressure Xenon
lamp is typically used in the instruments because it provides a continuous
output from 200 nm to 700 nm. From the Photoluminescence spectrum, the
spectral dependence of its intensity can provide information about the
properties of the material; the time dependence of the emission can provide
information about energy level coupling and lifetimes (Ricbard Brundle et al
1992). The presence of defects in the materials can also be estimated by the
PL emission involving defect level transitions, so the quality of materials can
be determined.
1.8.5 Hardness Measurements
Hardness is an important solid state property, which determines the
mechanical strength of the materials and the resistance to local deformation.
38
In the present study, hardness of the grown crystals is measured using
Vicker’s microhardness tester. To understand the mechanical behaviour of
crystalline materials and identify the mode of deformation micro indentation
has been made on a smooth surface of the selected specimen with the Vickers
diamond pyramidal indenter. The indentation is performed for various loads
at a constant indentation time of 5s. Vickers microhardness number (Hv) was
determined using the formula is given by
2v 2
1.8544PH kg / mm
d= (1.7)
where P is the test load in gram, d is the mean diagonal length of indentation
in m. Generally the hardness of the material varies with the applied test load.
Its value depends on the elastic and plastic behaviour of the solid and the test
conditions. It also facilitates to study the behaviour of dislocation when the
crystal is subjected to a stress. It is a technique of subjecting a crystal to
relatively high pressures within a localized area.
1.8.6 Etching Studies
The study of the identification, origin and characteristic of
crystalline defects such as grain boundaries, slip planes, dislocation and
plastic flow relies heavily on etching phenomena (Sangwal 1987). Etching is
the selective dissolution of the crystal, a reverse phenomenon of growth.
When a crystal phase is exposed to a solvent, dissolution begins by the
nucleation of unit pits of one molecular depth which then grows in the size by
the retreating steps across the crystal surface.
Etching is however a surface technique and care must be exercised
in the interpretation of etching studies, since densities and properties in the
39
surface and bulk regions of crystals frequently show marked difference. For
any defect etchant, it is essential to assess the extent to which a
correspondence exists between etch features and dislocations. In general, it
should be noted that not all etch pits are necessarily formed at emergent
dislocations and that not all dislocations give rise to etch features.
An etchant is a solvent of the testing sample. But all the solvents
are not the best etchant for the same sample. An etchant should satisfy the
following requirement: continued etching of a surface should, in general
result in no net change in the number of pits other than where pits are
associated with, for example, dislocation loops. In such cases, the pits should
appear or disappear in pairs. The occurrence of etch pits is an illustration of
the enhanced chemical reactivity of dislocation, while in this case the
different etch pit shapes on the same crystal face demonstrate the dependence
of this behaviour upon dislocation character. This technique requires only
very basic equipment and yields much valuable information. The three
important parameters for performing chemical etching of a material are;
etchant, temperature of etching and time of etching.
1.8.7 Thermal Analysis
The Thermogravimetric (TG), Differential thermal (DT) and
Differential scanning calorimetry (DSC) are used for thermal analysis in the
present investigation. The Perkin Elmer thermal analyser was used to study
the thermal behaviour of the grown samples between 35°C to 800°C in
nitrogen atmosphere at a heating rate of 10°C/min. TG records the change in
weight of the sample as a function of time or temperature. DT measures the
difference in the temperature of the sample and an inert reference material as
a function of temperature, thus detects the changes in the heat content of the
sample. The differential thermal curve would be parallel till the sample
40
undergoes physical or chemical change of state. However as soon as the
sample has reached the temperature, a change of state occurs which shows a
differential signal. Both the shape and size of the peak furnish the nature of
the sample. In DSC, the cell is designed so as to enable one to measure the
enthalpy changes quantitatively as a function of time or temperature. The
thermal analyser with the nitrogen atmosphere is used to get information
about the melting point, dehydration process and decomposition temperature
of the sample. Differential scanning calorimetry (DSC) is the most often used
thermal analysis method. In DSC, a sample and a reference are placed in
holders in the instrument. The instrument measures the difference in the heat
flow between the sample and the reference. The events which do not involve
weight changes like polymorphic transformations, para-ferroelectric phase
transitions can be detected by differential scanning calorimetry (DSC).
1.9 GENERAL DESCRIPTION OF NONLINEAR OPTICAL
PHENOMENA
Nonlinear optics is the study of phenomena that occurs as a
consequence of the modification of the optical properties of a material system
by the presence of light (Prasad and Williams 1991). The laser light is
sufficiently intense to modify the optical properties of a material system. The
beginning of the field of nonlinear optics is often taken to be discovery of
second harmonic generation by Franken et al (1961), after the demonstration
of the first working laser by Maiman (1960). The existence of harmonic light
waves at the boundary of a nonlinear dielectric medium was predicted
(Bloembergen and Pershan 1962) by discovery of other nonlinear effects
followed the discovery of second harmonic generation in quartz
(Bloembergen 1965). The field of nonlinear optics and photonics are rapidly
emerging as the technology for the twenty first century.
41
Photonics is the technology in which a photon instead of an
electron is used to acquire, store, process and transmit information. A
photonic circuit is equivalent to electronic circuit, in which photons are
conducted through channels. Light can be switched from one channel to
another at certain junction points. For optical switching at these junctions, one
needs to use a material that allows the manipulation of an electric field or
laser pulse. The materials which manipulate the light at these junction points
are known as NLO materials and these are gaining importance in technologies
such as optical communication, optical computing and dynamic image
processing (Boyd 1992). Photonics has many distinct merits over electronics.
The most important advantage is the gain in speed due the fact that a photon
travels much faster than electron. Other advantages are that there is no
electrical and magnetic interference, thereby the photonic circuits are fully
compatible with the existing fibre optics networks.
Before the advent of the lasers, optics assumed that optical
parameters of the medium are independent of the intensity of the light
propagating in these media. The reason is that, the electric field strength
generated by the non-laser light sources is of the order of 103 V/cm, is very
much smaller than the interatomic field strength that is 107 to 1010 V/cm of
the media, which is unable to affect the atomic fields of the medium and
thereby the optical properties of the medium. Lasers have drastically changed
the situation as they generate electric field strength varying from
105 to 1010 V/cm, which is close to that of the atomic electric fields of the
medium and thereby affect the optical properties of the medium and thus
generate new electromagnetic fields altered in phase, frequency and
amplitude. This is the domain of NLO. Each NLO processes may consist of
two parts. The intense light first induces a nonlinear response in a medium.
Then the medium in reaction modifies the optical fields in a nonlinear way.
42
The process is governed by Maxwell’s equations (Shen 1984, Butcher and
Cotter 1990).
A dielectric medium, when placed in an electric field is polarized.
This small movement of positive charges in one direction and negative
charges in the other, results in a collection of induced electric dipole
moments. The effect of field is to induce a polarization (Dmitriev et al 1991).
A light wave consists of electric and magnetic fields which vary sinusoidal to
optical frequencies. The motion of the charged particles in a dielectric
medium in response to an electric field is therefore oscillatory and form
oscillatory dipoles. Each constituent molecule acts as a dipole. At very low
fields, the induced polarization is directly proportional to the electric field.
P(t) = 0 E(t) (1.8)
where is the linear susceptibility of the material, E is the electric field
vector, 0 is the permittivity in free space.
At high fields polarization becomes independent of the field and the
susceptibility becomes field dependent. Therefore, the nonlinear response is
expressed by writing the induced polarization P(t) as a power series in the field
strength E(t) as,
P(t) = 0(1) E(1)(t)+ 0
(2)E(2)(t) + 0(3) E(3)(t) + … (1.9)
where the (2) and (3) coefficients represent the second and third order
nonlinear optical susceptibilities of the medium, respectively. To treat the
vector nature of the fields, in such a case (1) becomes a second rank tensor,(2) becomes a third rank tensor and so on.
43
(1) is the linear term responsible for the refractive index,
dispersion, birefringence and absorption. (2) is the quadratic term which
describes second harmonic generation, optical mixing and optical parametric
oscillation. (3) is the cubic term which is responsible for observing
phenomena such as stimulated Raman scattering, third harmonic generation,
phase conjugation and optical bistability.
In the case of centrosymmetric crystal (2) = 0, the material can
exhibit harmonic generation of third and fifth order. Two stage processes
occur during harmonic generation. A polarization wave at second harmonic
2 1 is produced in the first stage. The phase velocity and wavelength in the
medium are determined by n1, the index of refraction. In the second stage,
transfer of energy from the polarization wave to electromagnetic wave occurs
at frequency 2 2. The index of refraction n2 defines the phase velocity and
wavelength for the doubled frequency.
For efficient energy transfer, the two waves, should remain in
phase, i.e., n1 = n2. Due to normal dispersion occurring in the materials in the
optical region, the radiation will generally lag behind the polarization wave.
The phase mismatch between the polarization and electromagnetic
wave is given by
1 2
4k (n n )
π
λ
� �∆ = − !
" #(1.10)
For improving the efficiency of the doubled frequency, the crystal
has to be phase matched (Giordmaine 1962). The dispersion in the materials
can be offset by using the natural birefringence. There exist two indices of
refraction for a given direction of propagation, corresponding to the two
allowed orthogonally polarised modes. By an appropriate choice of
polarization and direction of propagation, it is often possible to obtain phase
44
matching or index matching, where k = 0. To realize the nonlinear effect a
suitable medium is required. To be a potential candidate for practical
applications, the materials need to exhibit large second order optical
nonlinearities.
1.9.1 Nonlinear Optical Crystals
Nonlinear optical (NLO) materials play a major role in nonlinear
optics and in particular they have a great impact on information technology
and industrial application. The understanding of the nonlinear polarization
mechanisms and their relation to the structural characteristics of the materials
has been considerably improved. The aim is to develop materials presenting
large nonlinearities and satisfying, at the same time, all the technological
requirements for applications such as wide transparency range, fast response
and high damage threshold.
Novel materials having attractive properties are being discovered at
a rapid pace, which advances in crystal growth technology making possible
the commercial development of promising materials such as Urea, KDP,
ADP, Lithium niobate, Potassium niobate, KTP (Wang et al 2009), YAB
(Leonyuk et al 2005) and -BBO (Sabharwal and Sangeeta 1998). Several
thousand nonlinear crystals and their closely isomorphs like Li6CuB4O10,
BiCu5B4O14 etc., have been developed (Pan et al 2006, Pan et al 2008).
1.9.2 General Requirements of NLO Crystals
An ideal nonlinear optical material should possess the following
characteristics:
45
1. High nonlinear coefficient
2. Wide transparency region
3. High laser damage threshold
4. Wide phase matching angle
5. High mechanical strength and thermal stability
6. Fast optical response time
7. Nontoxicity and good environmental stability
8. Non-hygroscopic nature
9. Architectural flexibility for molecular design and morphology
10. Ease of device fabrication
1.9.3 Phase Matching
The intense development of research on the mechanism of
generation of optical harmonic in crystal and media in which such generation
is effectively realizable, has indicated the importance of phase relation
between the fundamental and generated harmonic, as they propagate in crystal
having optical dispersion (Bloembergen 1963, Franken and Ward 1963). It
was observed that the efficiency of the generation of harmonics depends not
only on the intensity of the exciting radiations, but also on its direction of
propagation in crystals.
Phase matching means that the wave generating the polarization
and the generated waves (the three interacting waves) are in phase over the
interaction region, so the microscopic contributions of the generated
polarization of each individual dipole in the crystal can interfere
constructively, adding up to a macroscopic field. Only after this constructive
interference the nonlinear effect can be observed. To achieve phase-matching,
the phase velocity of the generated waves (while travelling through the
crystal) should equal the phase velocity of the pump wave in a parametric
46
process. This can be achieved in birefringent crystals, waves with different
wavelength can travel at the same speed (so in phase) when their polarization
directions are along different crystal axes. To fulfil phase matching, the
generated waves and the applied wave must have different polarization to
control their propagation velocities.
Certain asymmetric crystals are birefringent (doubly refracting)
because through them, light can travel at two different velocities, described as
ordinary (o) and extra ordinary (e). These velocities actually vary with
propagation direction and polarization as well as with wavelength. In certain
direction the ordinary fundamental light travels at exactly the same velocity as
extra ordinary harmonic light. When this happens, the SHG is greatly
enhanced and the system is said to be phase matched.
1.9.4 Types of NLO Materials
The nonlinear optical (NLO) crystals which provide the active
medium for nonlinear processes can be divided into three broad categories.
(i) Organic crystals
(ii) Inorganic crystals
(iii) Semiorganic crystals
1.9.4.1 Organic crystals
For the past two decades, extensive investigations have been
carried out on organic NLO materials for their nonlinear susceptibilities
compared with the inorganic materials (Chemla and Zyss 1987). Large
molecular first order susceptibilities ‘ ’ are associated with structures that
have a large difference between the ground and excited state dipole moments
47
and low energy charge transformation (Nalwa et al 1998). The preparation of
organic crystals is less expensive, nonlinear susceptibilities are high and
bifringence is sufficient for use in frequency converters. In general, organic
molecules exhibit very special properties originating from the versatility of
the carbon atoms, which is capable of engaging in various types of covalent
bonds and in a wide range of combinations. The molecules in pure organic
crystals are often bounded by weak van der Waals force of hydrogen bonds
which results in a high degree of delocalization of charges. The prototype
organic NLO materials contain one or more delocalized bonds, typically a
ring structure like benzene. Recent growing efforts in molecular engineering
suggest that organic NLO materials possess comparably better NLO
properties than inorganic, hence their tremendous practical potentials have
been anticipated.
1.9.4.2 Inorganic crystals
Investigations of nonlinear optical effects were initially focused on
pure inorganic systems and the first solid to demonstrate the second order
NLO properties was a quartz crystal. Many efficient inorganic materials such
as potassium dihydrogen phosphate (KDP), ammonium dihydrogen phosphate
(ADP), -barium borate (BBO), potassium niobate (KNbO3), lithium niobate
(LiNbO3), lithium iodate (LiIO3), potassium titanyl phosphate (KTP) and
lithium triborate (LBO) were developed in the past decades for NLO
applications (Dmitriev et al 1999, Yatriv 1988, Prasad and Williams 1991,
Sasaki et al 2000, Nikogosyan 2005). Inorganic NLO materials are mostly
ionic bonded and have high melting point and high degree of chemical
inertness. Indeed most of the commercial frequency doublers use these
inorganic materials. Among the inorganic materials, KDP is one of the
popular nonlinear optical materials used for frequency doubling phenomena.
48
1.9.4.3 Semiorganic crystals
A combination of organic and inorganic materials provides a
potentially useful approach to more efficient and stable NLO crystals. Metal
complexes satisfy very different demands of second order NLO materials
such as switchable, tunable and multi dimensional properties depending on
the suitable interplay of structure property relationships. It offers a wide range
of metals with different oxidation states and ligands, which can give rise to
tunable electronic properties. Semiorganic NLO crystals are expected to
possess the advantages of both organic and inorganic materials. There are
three different types of semiorganic crystals
(i) Organic-Inorganic salts such as L-arginine Phosphate
monohydrate (LAP), which was explored in the early 1980s
(Xu et al 1983).
(ii) Metal-Organic coordination complexes which were proposed
in 1985.
(iii) Organometallic compounds
Thus the organic-inorganic hybrid complexes present a new
promising type of materials for various applications. The benefits are due to
the materials such as wide range of electronic characteristics, mechanical
hardness and thermal stability and on the other hand structural variety, large
polarizability and easy processing of organics. The refractive indices of the
crystal could also be tuned due to exchange ability of metal and halogen
species within anions.
49
1.9.5 Objectives of the Thesis
The present thesis focuses the growth of complex organic
molecular crystals for nonlinear optical applications and a comparative study
on growth and characterization of Methyl 2-amino-5-bromobenzoate single
crystals by Conventional and Unidirectional methods.
The first chapter presents an outline to various crystal growth
methods and characterization and a brief description of nonlinear optics.
The second chapter deals with the growth of L-Serine methyl ester
hydrochloride single crystals by conventional slow evaporation solution
growth technique using methanol as solvent. The solubility was estimated in
different temperatures and was purified by repeated recrystallization
processes. The grown single crystals were subjected to various
characterization studies such as Fourier Transform Infrared (FT-IR), Optical,
Thermal (TG/DTA) and Second Harmonic Generation (SHG). The refractive
indices nx, ny and nz along the principal directions of the title crystal were
measured using Brewster’s angle method. The suitability of material for
Second Harmonic Generation (SHG) was confirmed by Kurtz and Perry
powder technique. The linear increase of SHG with increase of particle size
confirms the phase matching behaviour of the crystal.
The third chapter presents the growth and characterization of
nonlinear optical single crystals of L-Tyrosine methyl ester hydrochloride.
The cell parameters were determined using single crystal X-ray diffraction
studies. The presence of constituent elements in the material was confirmed
by the occurrence of their respective peaks in the EDX spectrum. A single
sharp high intensity peak was observed in the Photoluminescence spectrum
50
shows the crystalline perfection of the title compound. The thermal,
mechanical and second harmonic generation studies were carried out.
The fourth chapter discusses the synthesis and growth of a
nonlinear optical single crystal of D-Phenylglycinium bromide by
conventional solution method at 35°C using water as solvent. The crystal
structure was solved by direct method and refined by full matrix least squares
with SHELXL 97 program. The title crystal belongs to orthorhombic crystal
system with space group P212121. The lattice parameters are a = 5.5240(5) Å,
b = 7.4735(5) Å and c = 23.1229(18) Å. The photoluminescence study asserts
the suitability of the compound for optical applications. The thermal
behaviour of the crystal was studied by TG-DTA response curves. The
Vicker’s microhardness test clearly revealed that the grown crystal obeys the
reverse indentation size effect. The emission of green radiation of wavelength
532 nm from the crystalline powder was confirmed using Kurtz and Perry
powder technique.
The fifth chapter presents the bulk single crystal growth of
Ethyltriphenyl phosphonium bromide dihydrate by the slow evaporation
solution growth technique at room temperature using mixed solvent of double
distilled water and ethanol. It belongs to orthorhombic crystal system with
space group P212121. The optical behaviour was studied using
UV-Visible spectral analysis and the optical band gap is found to be 3.13 eV.
The suitability of the grown crystal in the blue emission region was confirmed
by Photoluminescence studies. The thermal, mechanical and SHG behaviour
were tested.
The sixth chapter deals with the comparative study on growth and
characterization of Methyl 2-amino-5-bromobenzoate by conventional
solution growth and Unidirectional Sankaranarayanan-Ramasamy (SR)
51
methods using methanol as solvent. The grown crystal was confirmed by
single crystal X-ray diffraction studies. The FT-IR and FT-Raman spectral
analyses confirm the functional groups present in the crystal. The refractive
indices (nx, ny and nz) of the title crystal were found using Brewster’s angle
method. Photoconductivity study confirms the negative photoconductivity
nature of the crystal. SHG studies were carried out with different particle
sizes of the powdered material and the phase matching behaviour was
confirmed.
Bulk size cylindrical shaped transparent <001> oriented single
crystal of Methyl 2-amino-5-bromobenzoate of size 60 mm length and 15 mm
diameter was successfully grown by Unidirectional growth method of
Sankaranarayanan-Ramasamy (SR). Identical samples prepared with similar
orientation using conventional and SR methods were subjected for various
characterization studies such as UV-Visible transmittance analysis,
Photoluminescence, Microhardness and Etching studies. The results of SR
method grown crystal and conventional grown crystal were compared. It was
found that the quality of crystal grown by SR method is better than
conventional method grown crystal.
The seventh chapter presents the summary of the work carried out
and suggestions for future work.