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ARLINGTON HALL ARLINGTON 12, · PDF fileArlington Hall Station Arlington 12, Virginia ATTN: TICSCA/42740 Commander 1 Air Research and Development Command Andrews Air Force Base Washington

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  • UNCLASSIFIED

    AD268 169

    ARMED SERVICES TECHNICAL INFORMATION AGENCYARLINGTON HALL SFATKONARLINGTON 12, VIRGINIA

    UNCLASSIFIED

  • NOTIC: 'en government or other drawings. spool-fications or other data are used for any purposeother than in connction vith a definitely relatedgoverment procur nt operation. the U. S.Government thereby incurs no responaibility, nor anyobliS~tion 4hatsoever; and the fact that the Govern-ment may have forualated, furnished, or in any waysupplied the said drawings, specifications, or otherdata i not to be reprded by implication or other-vise as in any smner licensing the holder or anyother person or corporation, or conveying any rittsor permission to mnufacture, use or sell anypatented invention that my in my vay be relatedthereto.

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    PRODUCTION ENGINEERING MEASUREON

    300 WATT SILICON AUDIO TRANSISTOR

    Contract No. DA-36-o39-SC-85968

    for

    Production Development DivisionDivision for Industrial Mobilization

    The Army Signal Supply AgencyPhiladelphia, Pennsylvania

    PERIOD COVERED:

    21 June, 1961 - 30 September, 1961

    I

    Written By: Reviewed By: , .pr ed rA

    S. Silverstein H. Meisel K.E. Loofbour w,, ManagerIndustrial TraMsistorProduct Development

    Edited By:

    L T. McCH. Id s l er

    RADIO CORPORATION OF AMERICA

    Materials and Semiconductor Division Somerville, New Jersey

  • I

    I DISTRIBUTION LISDESTINATION COPIES

    Commanding Officer 3SU.S. Army Signal Research and Development LaboratoryFort Monmouth, New JerseyATTN: Dr. Harold Jacobs

    Solid State and Frequency Control Division

    Commander 2Wright Air Development DivisionWright Patterson Air Force Base, OhioATTN: Mr. R. D. Alberts, WCLKS

    Advisory Group on Electronic Devices 2346 Broadway, 8th. FloorNew York 13, N. Y.

    Director 1Armed Services Electro-Standards AgencyFort Monmouth, New JerseyATTN: Adjutant

    Armed Services Technical Information Agency 10Arlington Hall StationArlington 12, VirginiaATTN: TICSCA/42740

    Commander 1Air Research and Development CommandAndrews Air Force BaseWashington 25, D. C.ATTN: RDTCT

    Air Force Cambridge Research CenterL. G. Hanscom FieldBedford, MassachusettsATTN: Mr.. R. A. Bradbury CRRSC

    A. H. Young 1Dept. of the NavyBureau of ShipsSemiconductors Group, Code 691 AlWashington 25, D. C.

    G. Abraham, Code 5266U. S. Naval Research LaboratoryWashington 25, D. C.

  • - ii-

    DISTRIBUTION LIST (CONT.)

    DESTINATION COPIES

    Canadian Liaison OfficeOffice of the Chief Signal OfficerDepartment of the ArmyThe PentagonWashington 25, D. C.ATTN: SIGEO-CL

    Sylvania Electric Products, Inc.100 Sylvan RoadWoburn, MassachusettsATTN: Library

    Texas Instruments, Inc.Semi-conductor-Components DivisionP. 0. Box 312Dallas 21, TexasATTN: Semi-conductor Library

    Transitron Electronic Corporation 1168-182 Albion StreetWakefield, MassachusettsATNT: Dr. D. Bakalar

    Commanding Officer

    U. S. Army Signal Material Support AgencyFort Monmouth, New JerseyATTN: Mr. Leon Kramer

    Chief Signal OfficerDepartment of the ArmyMain Navy Building

    Washington 25, D. C.ATTN: Mr. Charles Holman

    Chief, P and D Division(SIGPD-5b-1)

    Western Electric fmpany 2Marian and Vine StreetsLaureldale, Penna.ATTN: Mr. Robert Moore

    Westinghouse Electric CorporationYoungwood, Pennsylvania

    Diamond Ordance Fuze LaboratoriesConnecticut and Van Ness Streets, N. W.Washington 25, D. C.ATTN: DOFL Library

    Room 211Building 92(oRDTL-oll-59-138L)

  • -iii-

    DISTRIBUTION LIST (CONT.)

    DESTINATION COPIES

    Clevite-Transistor Products, Inc. 1241-57 Crescent StreetWaltham 54, Massachusetts

    General Electric CompanyElectronic ParkSyracuse, N. Y.ATTN: Mr. J. Flood

    Hughes ProductsSemi-conductor DivisionNewport Beach, California

    Minneapolis-Honeywell Regulator Company2753 Fourth Avenue SouthMinneapolis 8, Minnesota ,ATT14- Mr. D. R. Paler

    Mororola, Inc.5005 East McDowell RoadPhoenix, ArizonaATTN: Mr. James S. LaRue

    Pacific Semi-conductors, Inc.10451 West Jefferson BoulevardCulver City, CaliforniaATTN: Dr. H. Q. North

    Lansdale Tube CompanyChurch RoadLansdale, PennsylvaniaATTN: Mr. Frank Mayock

    Mgr - Gov't Sales

    * - Raytheon Manufacturing Company150 California StreetNewton, MassachusettsATTN: Mr. Frank Dukat

    Comanding OfficerWestern Regional Office

    " 125 South Grand AvenuePasadena 2, CaliforniaATTN: Mr. Gershon Miller

    International Rectifier Corporation1521 East Grand AvenueEl Segundo, CaliforniaATTN: Mr. Angus Scott

  • - iv-

    DISTRIBUTION LIST (CONT.)

    DESTINATION COPIES

    Ordnance Corps 1

    Picatinny ArsenalDover, New Jersey

    -ATTN: Mr. Christ C. Anagnost

    Dr. Robert H. Rediker, Gr 85 1Division 8, Room C-310Linclon LaboratoryLexington, Massachusetts

    Silicon Transistor Corporation 1

    Carle PlaceLong Island, N. Y.

    U. S. Army Signal Supply Agency 6225 So. 18th. StreetPhiladelphia 3, PennsylvaniaATTN: SIGSU-R2

    1.

    111

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    TABLE OF CONTENTS

    I Page

    I. PURPOSE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

    II. DEVICE DESIGN CONSIDERATIONS .... ..................... 2

    A. General ........................ ....... .. . ....... 2

    I B. Collector Breakdown Voltage............................ ... 2C.* Current Gain . . . . .. .. . . ... . . . . . * . . ... . * 3

    D. Thermal Resistance . ........ * . . . ........... 4

    I E. Power Gain .......... .. . .. .. * . . .* . . . . . .. . 5F. Case Design ................... ....... 7

    I G. Power Dissipation .......... .. ........................ 7III. DEVICE FABRICATION .......... . ............. 11

    A. Parts and Materials ...................... .1

    B. Processes and Processing. ................... 1. i

    1. General....................... ..

    .. 2. Diffusion . . . . . . . . . . . . . . . . . . . . .. ii

    3. Collector Formation . .. . .......... .... 15

    4o Base Formation o.. . .... ..... 15

    5. Emitter Formation. ........... . . . o . . . . . . . . 15

    6. Contacting . o. . .. . . . . . . . . ... . . . . 15V

    7. Mesa Formation . . . . ................ . . 15

    S8. Dicing . .. .. . . o.. .. . . ... .. .. . 15

    9. Mounting and Sealing ... .. ................ . 1

    IV. DEVICE EVALUATION. .. ................ . . . o . o . . . . . 19

    A. Electrical ........ .......................... . . 19

    B. Environmental . ............................... . 19

  • -vi-'I TABLE OF CONTENTS CONT.

    V.CNLSOSj Page

    V.~~~~ CCLSOS. .. . ............. ............ 20

    1VI. PROGRAM FOR NEXDT QUARTER . . . . .. .. .. . .. .. .. .. .. .21VII. PERSONNEL AND MAN HOURS .. .. .. .. .. ..... ........ . . 22

  • i-vii-

    I LIST OF FIGURESFigure Number Title Page

    1 Derating Curve for Type TA 2167 ...... .............. 6

    j 2 Double-Ended Stud Package for the TA 2167......... 83 Photograph of Single-Ended Stud Packages Used to Enclose

    I Initial State-of-the-Art Samples ...... . . . * . . 9

    4 Parts and Materials Flow Chart for TA-2167 Type Transistor 12

    j 5 A Flow Chart of Present Processing for the TA-2167 SiliconPower Transistor ..................... . 13

    6 Impurity Profile for High Voltage Silicon Transistors. . . 14

    7 Photograph of a Device Showing the 0.050" Molybdenum Plat-form Located on the Header After the Leads have.Beei Removed17

    8 Photograph of a Unit Bonded Using the Two Gold Ribbons . . 18

    LIST OF TABLES

    Table Number Title Page

    I Electrical Characteristics of Initial Five State-of-the-Art Samples. . . . . . . . ... . . . .. .. . . . 19

    II Man Hours for First Quarter. . . . . .. .. .. . ... 25

  • -viii-

    LIST OF SYMBOLS

    Symbol Explanation

    BVc 0 Breakdown Voltage, Collector-to-Base, emitter open

    BVEBO Breakdown Voltage, Emitter-to-Base, collector open

    Cob Output Capacitance, common base

    f Maximum Frequency of Oscillationmax

    I Intrinsic or undiffused layer

    IC Collector current, DC

    ICBO Collector Cutoff Current, DC, emitter open

    I CER Collector Cutoff Current, DC, with specified resistance betweenbase and emitter

    IEBO Emitter Cutoff Current, DC, collector open

    rbb, Base Spreading Resistance

    RBE External Base-to-Emitter Resistance

    lec Maximum Allowable Transit Time, Minority Carrier, Emitter-to-Collector

    -e Emitter Phase Delay Time

    ITb Base Transit Time

    -1 Collector Transit Time

    VCBO Collector-to-Base Voltage, DC, emitter open

    V CEO Collector-to-Emitter Voltage, DC, base open

    VCER Collector-to-Emitter Voltage, DC, with specified resistancebetween emitter and base

    kt Constant equal to 0.026 voltsq

    h FE Static value of the forward current transfer ratio (common emitter)

    VCE (sat) Collector-to-Emitter Saturation Voltage

    n Efficiency

    Q Thermal ResistanceII

  • -ix-

    ABSTRACT

    This abstract gives a brief description of the significant accomplishments

    of Signal Corps Three-Hundred Watt Audio Transistor Program DA-36-039-SC-85968

    by the Radio Corporation of America (Semiconductor and Materials Division) dur-

    ing the period from June 21, 1961 to September 30, 1961.

    A triple-diffused, NPIN transistor has been selected as the device for fab-

    rication as the specified three-hundred watt, audio transistor. This type of

    structure will permit the desired characteristics of reduced base resistance,

    minimized collector-to-emitter punch-through voltage, high collector breakdown

    voltages, small base widths without rea

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