AFT09MS007N UHF Power Amplifier for PMRcache.freescale.com/files/rf_if/doc/support_info/RDAFT09MS007N_UHF...AFT09MS007N UHF Power Amplifier for PMR 1 ... The AFT09MS007N RF transistor

AFT09MS007N UHF Power Amplifier for PMR

1RF Reference Design DataFreescale Semiconductor, Inc.

RF Power Reference Design Library

UHF Power Amplifier for ProfessionalMobile Radio Reference DesignHigh Ruggedness N--Channel Enhancement--ModeLateral MOSFET

Reference Design CharacteristicsThe AFT09MS007N RF transistor is designed for mobile two--way radio

applications with frequencies from 136 to 941 MHz. The high gain, extremeruggedness and broadband performance of this device makes it ideal forlarge--signal, common--source amplifier applications in mobile radio equipment.This document focuses on a broadband UHF power amplifier application forprofessional two--way mobile radios.

Frequency Band: 350–470 MHz

Output Power: 7.3 W CW

Gain (Min): 15.6 dB

Supply Voltage: 7.5 Vdc

Drain Efficiency (Min): 60.9%

The AFT09MS007N device is an enhanced ruggedness 7.5 V Airfast RFpower LDMOS transistor that can operate in harsh environments and in highlymismatched applications (within the limits of maximum junction temperature). Itoffers the best ruggedness in the industry and is able to survive VSWRs of> 65:1 VSWR at all phase angles even with simultaneous 10.8 Vdc supplyovervoltage and +3 dB overdrive.

UHF PROFESSIONAL MOBILE RADIO POWER AMPLIFIER REFERENCE DESIGN

This reference design is designed to demonstrate the RFperformance characteristics of the AFT09MS007N RFtransistor when applied to the 350–470 MHz professional

mobile radio band. The reference design is tuned forperformance at 7 W CW output power, VDD = 7.5 Vdc,IDQ = 200 mA.

Figure 1. Professional Mobile Radio Power Amplifier Reference Design Fixture — 350–470 MHz

Available at http://freescale.com > DesignResources > Reference Designs > Industrial

Rev. 0, 4/2014

Freescale SemiconductorTechnical Data

AFT09MS007NUHF Power

Amplifier for PMR

Freescale Semiconductor, Inc., 2014. All rights reserved.

2RF Reference Design Data

Freescale Semiconductor, Inc.


REFERENCE DESIGN LIBRARYTERMS AND CONDITIONS

Freescale is pleased to make this reference designavailable for your use in development and testing of yourown product. The reference design contains an easy--to--copy, fully functional amplifier design. It consists of “no tune”distributed element matching circuits designed to be as smallas possible, and is designed to be used as a “building block”by our customers.

HEATSINKINGWhen operating this fixture it is critical that adequate

heatsinking is provided for the device. Excessive heating ofthe device may cause the destruction of the device orprevent duplication of the included measurements.

PERFORMANCE AND MEASUREMENTS

This 350–470 MHz Professional Mobile Radio amplifierreference design is designed to utilize the standard 7.5 Vpower supply commonly used in vehicle mount applications.With no RF drive to the input, the supply voltage VDD is

increased to 7.5 Vdc, then VGS is increased to achievedesired IDQ. The RF input drive is then slowly increased untilthe required power level is measured at the RF output.

Measurements are taken with output power set to 7 W at350 MHz and 470 MHz. The fixture is tuned until the gaindrop between the two different power levels is less than 1 dBat both frequencies. Once tuned, CW measurements withthe output power set to 7 W are performed at 350 MHz,410 MHz and 470 MHz.

Table 1. 350–470 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)VDD = 7.5 Vdc, IDQ = 200 mA, TA = 25C, CW

Frequency(MHz)

Pin(W)

Gps(dB)

D(%)

Pout(W)

350 0.15 16.6 60.9 7.3

410 0.15 16.6 66.5 7.3

470 0.20 15.6 70.1 7.3

Table 2. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency(MHz)

SignalType VSWR

Pin(W) Test Voltage, VDD Result

470 CW > 65:1 at allPhase Angles

0.4(3 dB Overdrive)

10.8 No DeviceDegradation



TYPICAL CHARACTERISTICS — 350–470 MHz UHF BROADBANDREFERENCE CIRCUIT

320

Gps

f, FREQUENCY (MHz)

Figure 2. Power Gain, Drain Efficiency and Output Power versusFrequency at a Constant Input Power

12

20

5

90

80

70

60

8

7

6

D,DRAIN

EFFICIENCY(%)

D

Gps,POWER

GAIN(dB)

19

17

13

360 380 420 440 480 500

50

P out,OUTPUT

POWER

(WATTS)

VDD = 7.5 VdcPin = 0.20 WIDQ = 200 mA

Pout

18

16

15

14

340 400 460

00

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 3. Output Power versus Gate--Source Voltage

1 2 3 4

10

2

8

4

P out,OUTPUTPOWER

(WATTS)

f = 410 MHz

VDD = 7.5 Vdc, Pin = 0.25 W

00

Detail A

1.2 20.80.4

0.6

0.4

0.8f = 410 MHz

Detail A

VDD = 7.5 VdcPin = 0.1 W

P out,OUTPUTPOWER

(WATTS)

VGS, GATE--SOURCE VOLTAGE (VOLTS)

6

12

14

VDD = 7.5 Vdc, Pin = 0.1 W

0.2

VDD = 7.5 VdcPin = 0.25 W

5

1.6

Figure 4. Power Gain, Drain Efficiency and OutputPower versus Input Power and Frequency

Pin, INPUT POWER (WATTS)

Gps,POWER

GAIN(dB)

13

16

15

0.01 1

Gps

7.5

20

10

0

2.5

19

18

17

20

40

60

80

0.1

Pout

VDD = 7.5 VdcIDQ = 200 mA

14470 MHz

D

P out,OUTPUT

POWER

(WATTS)

f = 470 MHz350 MHz

470 MHz

410 MHz350 MHz

350 MHz

410 MHz

12

5

D,DRAIN

EFFICIENCY(%)

410 MHz




Figure

5.AFT09MS007N

T1UHFBroadbandReference

CircuitSchem

atic—

350–470MHz

RF

INPUT

C6

V BIAS

V SUPPLY

C12

RF

OUTPUT

Z25

C19

Z23

Z22

C16

Z21

L5

C13

C14

C15

C5

Z4Z3

C1

Z2Z1

L1

C2

L2Z5

Z6

C3

Z7

C4

Z8Z9

R1

L3

Z10

Z11

C11

Z16Z17

L6Z20

L4

L7

C18

C17

Z12Z13

Z14Z15

C7

C8

C10

C9

Z18Z19

Z24

Table3.AFT09MS007N

T1UHFBroadbandReference

CircuitMicrostrips—

350–470MHz

Description

Microstrip

Description

Microstrip

Z18

0.088

0.170

Microstrip

Z19

0.205

0.046

Microstrip

Z20

0.148

0.046

Microstrip

Z21

0.032

0.046

Microstrip

Z22

0.195

0.046

Microstrip

Z23

0.089

0.046

Microstrip

Z24

0.046

0.046

Microstrip

Z25

0.060

0.034

Microstrip

Z1

0.060

0.034

Microstrip

Z2

0.026

0.046

Microstrip

Z3

0.026

0.046

Microstrip

Z4

0.060

0.046

Microstrip

Z5

0.054

0.046

Microstrip

Z6

0.054

0.046

Microstrip

Z7

0.060

0.046

Microstrip

Z8

0.084

0.046

Microstrip

Z9

0.044

0.046

Microstrip

Z10

0.037

0.046

Microstrip

Z11

0.055

0.046

Microstrip

Z12

0.235

0.046

Microstrip

Z13

0.121

0.300

Microstrip

Z14

0.031

0.300

Microstrip

Z15

0.070

0.146

Microstrip

Z16

0.070

0.146

Microstrip

Z17

0.160

0.170

Microstrip

Description

Microstrip



350–470 MHz UHF BROADBAND REFERENCE CIRCUIT

Figure 6. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 350–470 MHz

C1

L1

C2

C3

C4

C5

L2

C6 C7

C8

C9

C10

C11

L3

J1

Q1

L5

L4

L6

L7

C14C15

C13

C12

C19

C18

C17

C16

R1

Rev.1

D58008

Table 4. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–470 MHzPart Description Part Number Manufacturer

C1, C10, C19 100 pF Chip Capacitors ATC600F101JT250XT ATC

C2 10 pF Chip Capacitor ATC600F100JT250XT ATC

C3 3.0 pF Chip Capacitor ATC600F3R0BT250XT ATC

C4, C8 27 pF Chip Capacitors ATC600F270JT250XT ATC

C5 5.1 pF Chip Capacitor ATC600F5R1BT250XT ATC

C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC

C9 10 nF Chip Capacitor C1210C103J5GAC-TU Kemet



C13 2.2 F Chip Capacitor C3225X7R1H225K250AB TDK

C14 0.1 F Chip Capacitor GRM21BR71H104KA01B Murata

C15 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata


C17 18 pF Chip Capacitor ATC600F180BT250XT ATC

C18 7.5 pF Chip Capacitor ATC100A7R5JT150XT ATC

J1 3--pin Header 22-28-8360 Molex

L1 8.1 nH Inductor 0908SQ8N1 Coilcraft

L2 2.55 nH, 3 Turn Inductor 0906-3JLC Coilcraft

L3, L4, L5 21.5 nH Inductors 0908SQ22N Coilcraft

L6 3.85 nH, 4 Turn Inductor 0906-4JLC Coilcraft

L7 8.9 nH Inductor 0806SQ8N9 Coilcraft

Q1 RF Power LDMOS Transistor AFT09MS007NT1 Freescale

R1 62 , 1/10 W Chip Resistor RG2012N-620-B-T1 Susumu

PCB Shengyi S1000-2, 0.020, r = 4.8 D58008 MTL




INPUT OUTPUT

Figure 7. Professional Mobile Radio Power Amplifier ReferenceDesign Fixture — 350–470 MHz (Detailed View)



TIPS TO MODIFY PERFORMANCE

C1

L1

C2

C3

C4

C5

L2

C6 C7

C8

C9

C10

C11

L3

J1

Q1

L5

L4

L6

L7

C14C15

C13

C12

C19

C18

C17

C16

R1

Rev.1

D58008

S It is not recommended to move or change anycomponents on the input match. Check for assemblyerrors if input return loss is worse than –4 dB across theband of interest.

Figure 8. Input Match

C1

L1

C2

C3

C4

C5

L2

C6 C7

C8

C9

C10

C11

L3

J1

Q1

L5

L4

L6

L7

C14C15

C13

C12

C19

C18

C17

C16

R1

Rev.1

D58008

S Moving C7 and C8 away from the device will improve theefficiency at 370 MHz, but will lower the output power andgain at 520 MHz.

S Moving C7 and C8 closer to the device will lower theefficiency at 370 MHz, but will improve the output power andgain at 520 MHz.

Q1

Figure 9. Output Match




350–470 MHz UHF BROADBAND REFERENCE CIRCUIT

Zo = 10

f = 350 MHz

f = 470 MHz

Zload

Zsource

f = 350 MHz

f = 470 MHz

VDD = 7.5 Vdc, IDQ = 200 mA, Pout = 7.5 W

fMHz

Zsource

Zload

350 2.7 + j6.6 3.5 + j4.2

370 3.3 + j6.2 3.7 + j4.2

390 3.1 + j5.4 3.5 + j4.0

410 2.6 + j6.1 3.5 + j5.0

430 2.1 + j7.1 3.6 + j5.9

450 2.2 + j7.3 3.6 + j5.6

470 2.0 + j7.7 3.0 + j5.8

Zsource = Test circuit impedance as measured fromgate to ground.

Zload = Test circuit impedance as measured fromdrain to ground.

Figure 10. UHF Broadband Series Equivalent Source and Load Impedance — 350–470 MHz

InputMatchingNetwork

DeviceUnderTest

OutputMatchingNetwork

Zsource Zload

5050



REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Apr. 2014 Initial Release of AFT09MS007N UHF Power Amplifier for Professional Mobile Radio Reference Design




Information in this document is provided solely to enable system and softwareimplementers to use Freescale products. There are no express or implied copyrightlicenses granted hereunder to design or fabricate any integrated circuits based on theinformation in this document.

Freescale reserves the right to make changes without further notice to any productsherein. Freescale makes no warranty, representation, or guarantee regarding thesuitability of its products for any particular purpose, nor does Freescale assume anyliability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation consequential or incidentaldamages. “Typical” parameters that may be provided in Freescale data sheets and/orspecifications can and do vary in different applications, and actual performance mayvary over time. All operating parameters, including “typicals,” must be validated foreach customer application by customer’s technical experts. Freescale does not conveyany license under its patent rights nor the rights of others. Freescale sells productspursuant to standard terms and conditions of sale, which can be found at the followingaddress: freescale.com/SalesTermsandConditions.

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. Allother product or service names are the property of their respective owners.E 2014 Freescale Semiconductor, Inc.

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AFT09MS007N UHF Power Amplifier for PMRcache.freescale.com/files/rf_if/doc/support_info/RDAFT09MS007N_UHF...AFT09MS007N UHF Power Amplifier for PMR 1 ... The AFT09MS007N RF transistor