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8/10/2019 3a BJT Introduction
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Chapter 3
BJT (Bipolar Junction Transistor)
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Bipolar Junction Transistor
There are two types oftransistors: pnp npn
The terminals are labeled: E - Emitter B - Base C - Collector
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Transistor operation
With the external sources, VEEand VCC, connected asshown below:
The emitter-base junction is forwardbiased
The base-collector junction is reverse
biased
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Currents in transistor
The collector current is comprised oftwo currents:
BI
CI
EI
COminoritICmajorityICI
Emitter current is the sum of thecollector and base currents:
Leakage
current
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COMMON-BASE configuration
The base is common to both input (emitterbase)and output (collectorbase) of the transistor.
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Operating regionsThis graph demonstrates the output
current (IC)to an output voltage (VCB)for various levels of input current (IE).
Output/collector Characteristics
Operating range
of the amplifier
The amplifier is
basically OFF.There is voltage,
but little current
The
amplifier is
full ON.
There is
current,
but little
voltage.
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Transistor amplification
Voltage Gain:
250
200mV
50V
iV
LV
vA
V50)k5)(ma10(RL
IL
V
mA10i
IL
I
EI
CI
10mA20
200mV
iR
iV
iIEI
Currents and Voltages:
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Common-emitter configuration
The emitter is common to both input (base-emitter) andoutput (collector-emitter).
The input is on the base and the output is on the collector.
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Collector characteristics
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Currents in C-E amplifier
Ideal Currents
IE= IC+ IB IC= IE
Actual Currents
IC= IE+ ICBO
When IB= 0 A the transistor is in cutoff, but there is
some minority current flowing called ICEO.
A0ICBO
CEO B1
II
where ICBO= minority collector current
This is usually so small that it can beignored, except in high power transistorsand in high temperature environments.
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Amplification factor
In DC mode:
In AC mode:
represents the amplification factor of a transistor. ( issometimes referred to as hfe, a term used in transistormodeling calculations)
B
Cdc
I
I
ttanconsVB
Cac CEI
I
Relationship betweenamplification factors and 1
1
Relationship BetweenCurrents
BC II BE 1)I(I
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Determining from a graph
Note: AC= DC
108
A25
mA2.7 7.5VDC CE
100
A10
mA1
A)20A(30
mA)2.2mA(3.2
7.5V
AC
CE
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Common-collector configuration
The input is on the base and the output is on the emitter.
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Limits of operation
VCEis at maximum and ICis
at minimum (ICmax= ICEO) in
the cutoff region.
ICis at maximum and VCEis
at minimum (VCE max= VCEsat
= VCEO) in the saturation
region.
The transistor operates in theactive regionbetween
saturation and cutoff.
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Power dissipation
Common-collector:
CCBCmax IVP
CCECmax IVP
ECECmax IVP
Common-base:
Common-emitter:
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Transistor specification sheet