3a BJT Introduction

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    Chapter 3

    BJT (Bipolar Junction Transistor)

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    Bipolar Junction Transistor

    There are two types oftransistors: pnp npn

    The terminals are labeled: E - Emitter B - Base C - Collector

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    Transistor operation

    With the external sources, VEEand VCC, connected asshown below:

    The emitter-base junction is forwardbiased

    The base-collector junction is reverse

    biased

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    Currents in transistor

    The collector current is comprised oftwo currents:

    BI

    CI

    EI

    COminoritICmajorityICI

    Emitter current is the sum of thecollector and base currents:

    Leakage

    current

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    COMMON-BASE configuration

    The base is common to both input (emitterbase)and output (collectorbase) of the transistor.

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    Operating regionsThis graph demonstrates the output

    current (IC)to an output voltage (VCB)for various levels of input current (IE).

    Output/collector Characteristics

    Operating range

    of the amplifier

    The amplifier is

    basically OFF.There is voltage,

    but little current

    The

    amplifier is

    full ON.

    There is

    current,

    but little

    voltage.

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    Transistor amplification

    Voltage Gain:

    250

    200mV

    50V

    iV

    LV

    vA

    V50)k5)(ma10(RL

    IL

    V

    mA10i

    IL

    I

    EI

    CI

    10mA20

    200mV

    iR

    iV

    iIEI

    Currents and Voltages:

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    Common-emitter configuration

    The emitter is common to both input (base-emitter) andoutput (collector-emitter).

    The input is on the base and the output is on the collector.

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    Collector characteristics

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    Currents in C-E amplifier

    Ideal Currents

    IE= IC+ IB IC= IE

    Actual Currents

    IC= IE+ ICBO

    When IB= 0 A the transistor is in cutoff, but there is

    some minority current flowing called ICEO.

    A0ICBO

    CEO B1

    II

    where ICBO= minority collector current

    This is usually so small that it can beignored, except in high power transistorsand in high temperature environments.

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    Amplification factor

    In DC mode:

    In AC mode:

    represents the amplification factor of a transistor. ( issometimes referred to as hfe, a term used in transistormodeling calculations)

    B

    Cdc

    I

    I

    ttanconsVB

    Cac CEI

    I

    Relationship betweenamplification factors and 1

    1

    Relationship BetweenCurrents

    BC II BE 1)I(I

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    Determining from a graph

    Note: AC= DC

    108

    A25

    mA2.7 7.5VDC CE

    100

    A10

    mA1

    A)20A(30

    mA)2.2mA(3.2

    7.5V

    AC

    CE

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    Common-collector configuration

    The input is on the base and the output is on the emitter.

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    Limits of operation

    VCEis at maximum and ICis

    at minimum (ICmax= ICEO) in

    the cutoff region.

    ICis at maximum and VCEis

    at minimum (VCE max= VCEsat

    = VCEO) in the saturation

    region.

    The transistor operates in theactive regionbetween

    saturation and cutoff.

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    Power dissipation

    Common-collector:

    CCBCmax IVP

    CCECmax IVP

    ECECmax IVP

    Common-base:

    Common-emitter:

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    Transistor specification sheet